Semiconductor element with trench structure

DE102017100558B4Active Publication Date: 2026-06-11INFINEON TECHNOLOGIES AMERICAS CORP
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Patent Information

Authority / Receiving Office
DE · DE
Patent Type
Patents
Current Assignee / Owner
INFINEON TECHNOLOGIES AMERICAS CORP
Filing Date
2017-01-12
Publication Date
2026-06-11

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Abstract

Semiconductor component, comprising: a semiconductor substrate with a base region (306) located above a drift region (304); a doped column (322) extending into the drift area; a gate trench (310) extending through the base area (306) and into the drift area (304); wherein the gate trench (310) surrounds the doped column (322), wherein the gate trench has a gate electrode located above a buried electrode.
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