Semiconductor lasers with an acoustic layer and manufacturing processes for semiconductor lasers

The semiconductor laser addresses facet damage by fracturing without material removal, achieving high optical power densities and improved reliability through stealth dicing and acoustic layers, enhancing manufacturing yield and stability.

DE102018125496B4Active Publication Date: 2026-05-28OSRAM OPTO SEMICON GMBH & CO OHG
View PDF 6 Cites 0 Cited by

Patent Information

Application Number
DE102018125496
Authority / Receiving Office
DE · DE
Patent Type
Patents
Current Assignee / Owner
Filing Date
2018-10-15
Publication Date
2026-05-28
Estimated Expiration
2038-10-15

Smart Images

  • Figure 00000000_0000_ABST
    Figure 00000000_0000_ABST
Patent Text Reader

Abstract

Semiconductor laser (1) with a semiconductor layer sequence (2) for generating laser radiation (L), wherein - the semiconductor layer sequence (2) on a top surface (20) has at least one geometric structuring (5), - a resonator (4) in the semiconductor layer sequence (2) is bounded by two opposing facets (3) of the semiconductor layer sequence, such that the facets (3) include optically effective resonator end faces (42), - the structuring (3) ends at a distance from at least one of the facets (3), - at least one of the resonator end faces (42) is spaced away from material removals from the semiconductor layer sequence (2), - an acoustic layer (61) is attached to at least one of the facets (3) on the top surface (20) of the semiconductor layer sequence (2), which exhibits a lower speed of sound than the semiconductor layer sequence (2), and - the acoustic layer (61) is arranged at a distance from electrical contact surfaces (71) of the semiconductor laser (1) and is limited to a strip on the relevant facet (3).
Need to check novelty before this filing date? Find Prior Art

Citation Information

Patent Citations

  • Methods for manufacturing semiconductor laser elements and semiconductor laser elements

    DE102012112531A1

  • semiconductor laser

    DE102016106495A1

  • Semiconductor laser element

    JP2010114202A

  • Semiconductor light emitting device

    US20110051769A1

  • Semiconductor laser device with non-oxidized facet regions

    US6430203B1