Dual-thickness locking structures and methods

Dual-thickness wire structures in semiconductor fuses address the challenge of laser triggering and efficient fabrication by incorporating thinner and thicker sections, enhancing laser safety and reducing masking steps.

DE102019206611B4Active Publication Date: 2026-05-28GLOBALFOUNDRIES US INC
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Patent Information

Application Number
DE102019206611
Authority / Receiving Office
DE · DE
Patent Type
Patents
Current Assignee / Owner
Priority Date
2018-05-09
Filing Date
2019-05-08
Publication Date
2026-05-28
Estimated Expiration
2039-05-08

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Abstract

Structure (10), comprehensive: an insulator (12) with one or more wires (14) formed in the insulator (12); a single bump (16) made of a single insulator material, formed on the insulator (12); a continuous wiring structure on a single wiring plane and which is formed from a conductive material (20) with a fuse section (20') over the single hump (16) made of the single insulator material and a thicker wiring structure (20''), wherein the fuse section (20') and the thicker wiring structure (20'') have a flat surface; a layer of barrier material (22), wherein the layer of barrier material (22) is located directly on the flat surface of the fuse section (20') and the thicker wiring structure (20''); a barrier layer (18) which is in contact with a bottom surface of the continuous wiring structure with the fuse section (20') and the thicker wiring structure (20''), with a top surface and with side surfaces of the single insulator material of the single hump (16), wherein the barrier material layer (22) and the barrier layer (18) are formed of Ti or TiN; a crack-stopping structure (14') vertically below the single hump (16) made of the single insulator material and the fuse section (20'), which is thinner than the thicker wiring structure (20''); and a nitride material (15) between and in direct contact with the single bump (16) made of the single insulator material and the crack-stopping structure (14').
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Citation Information

Patent Citations

  • Triple damascene fuse

    US20030168714A1

  • Fuse structure having crack stop void, method for forming and programming same, and design structure

    US20120012976A1

  • Semiconductor device and method of manufacturing the same

    US20170069570A1

  • Post-fuse blow corrosion prevention structure for copper fuses

    US6498385B1

  • System and method for forming aluminum fuse for compatibility with copper BEOL interconnect scheme

    US8921975B2