GATE STRUCTURE OF A SEMICONDUCTOR ELEMENT AND METHOD FOR MAKING THE SAME

The reshaping of sacrificial gates in semiconductor devices addresses issues of polymer residues and short-circuiting, improving gap-filling and reducing resistance to enhance device performance and yield.

DE102020116706B4Active Publication Date: 2026-05-28TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Application Number
DE102020116706
Authority / Receiving Office
DE · DE
Patent Type
Patents
Current Assignee / Owner
Priority Date
2020-06-12
Filing Date
2020-06-25
Publication Date
2026-05-28
Estimated Expiration
2040-06-25

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Abstract

Procedure, comprising the following steps: Forming a fin (52) extending from a substrate (50); Forming a sacrificial gate electrode layer (62) along a side wall and an upper surface of the fin (52); Performing a structuring process on the sacrificial gate electrode layer (62) to form a sacrificial gate electrode (72); and Performing a remodeling process on the sacrificial gate electrode (72) to form a remodeled sacrificial gate electrode, wherein the remodeled sacrificial gate electrode comprises the following: a first section (72A) above the upper surface of the fin (52), wherein the width of the first section (72A) decreases as the first section (72A) extends from an upper surface of the first section (72A) towards the upper surface of the fin (52); and a second section (72B) along the side wall of the fin (52), wherein the width of the second section (72B) decreases as the second section (72B) extends from the upper surface of the fin (52) towards the substrate (50), wherein the first section (72A) of the redesigned sacrificial gate electrode has a sloping and flat side wall, wherein the second section (72B) of the redesigned sacrificial gate electrode has a curved side wall.
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Citation Information

Patent Citations

  • Semiconductor Devices Including Channel Regions with Varying Widths

    US20160111531A1

  • Semiconductor devices, finfet devices and methods of forming the same

    US20170098711A1