METHOD FOR OPERATING A POWER TRANSISTOR AND DRIVER DEVICE

The integration of a dielectric gate stack with a ferroelectric insulator in power transistors addresses overheating issues by regulating drain current and threshold voltage, enhancing short-circuit protection and reliability.

DE102022115947B4Active Publication Date: 2026-05-28INFINEON TECHNOLOGIES AG
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Patent Information

Application Number
DE102022115947
Authority / Receiving Office
DE · DE
Patent Type
Patents
Current Assignee / Owner
Priority Date
2021-07-28
Filing Date
2022-06-27
Publication Date
2026-05-28
Estimated Expiration
2042-06-27

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Abstract

Method for operating a power transistor formed by a plurality of transistor cells (104) connected electrically in parallel, wherein each transistor cell of the plurality of transistor cells (104) has a gate structure (110) comprising a gate electrode (112) coupled to a control terminal and a dielectric gate stack (114), wherein the dielectric gate stack (114) has a ferroelectric insulator (116), the method comprising: switching the power transistor in a normal operating mode by applying a switching control signal to the control terminal, wherein the switching control signal has a maximum voltage and a minimum voltage; and a setting of the ferroelectric insulator (116) into a defined polarization state by applying a first voltage pulse to the control terminal, wherein the first voltage pulse exceeds the maximum voltage of the switching control signal, and wherein setting the ferroelectric insulator (116) into the defined polarization state further comprises: applying a second voltage pulse to the control terminal, where the second voltage pulse has a polarity opposite to the first voltage pulse, where the second voltage pulse exceeds the minimum voltage of the switching control signal.
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Citation Information

Patent Citations

  • Field effect semiconductor component and methods for operating and producing it

    US20150380511A1

  • Transistors with ferroelectric gates

    US20200098926A1