BIPOLAR TRANSISTORS WITH A BASE LAYER INVOLVED IN A DIODE

The lateral bipolar transistor structure with a diode junction, formed using an SOI substrate and epitaxial growth, addresses performance limitations in existing designs by enhancing carrier control and reducing capacitance.

DE102023100306B4Active Publication Date: 2026-05-28GLOBALFOUNDRIES US INC
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Patent Information

Application Number
DE102023100306
Authority / Receiving Office
DE · DE
Patent Type
Patents
Current Assignee / Owner
Filing Date
2023-01-09
Publication Date
2026-05-28
Estimated Expiration
2043-01-09

AI Technical Summary

Technical Problem

Existing bipolar transistor structures lack improved designs and fabrication methods that enhance performance and functionality.

Method used

A lateral bipolar transistor structure is developed, comprising raised semiconductor layers, a base layer, and a modulator, formed using an SOI substrate with specific doping and epitaxial growth techniques to create a diode junction, enabling efficient carrier modulation.

Benefits of technology

The structure facilitates enhanced control of base carriers and reduces collector/base capacitance, improving the performance and functionality of bipolar transistors.

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Abstract

Structure of a lateral bipolar transistor, wherein the structure comprises: a first terminal comprising a first raised semiconductor layer (38); a second terminal comprising a second raised semiconductor layer (40); a base layer (30) positioned in a lateral direction between the first raised semiconductor layer (38) of the first terminal and the second raised semiconductor layer (40) of the second terminal, wherein the base layer (30) has a first conductivity type; a first modulator comprising a semiconductor layer (46) in direct contact with the base layer (30), wherein the semiconductor layer (46) has a second conductivity type opposite to the first conductivity type, and a substrate (16), characterized in that the base layer (30) is positioned in a vertical direction between the semiconductor layer (46) and the substrate (16).
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Citation Information

Patent Citations

  • Method of manufacturing a lateral bipolar transistor

    EP0401786B1