Method for producing a semiconductor substrate without ex-situ structuring
The method of growing group III nitride semiconductor layers under superstoichiometric nitrogen conditions forms facets to terminate dislocations, resulting in a smooth, defect-free substrate suitable for high-indium-content structures, addressing fabrication challenges and reducing costs.
DE102024136271A1Pending Publication Date: 2026-06-11FORSCHUNGSVERBUND BERLIN EV
Patent Information
- Authority / Receiving Office
- DE · DE
- Patent Type
- Applications
- Current Assignee / Owner
- FORSCHUNGSVERBUND BERLIN EV
- Filing Date
- 2024-12-05
- Publication Date
- 2026-06-11
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Abstract
The invention relates to a method for producing a semiconductor substrate (100). The method comprises providing a base substrate (10). The method further comprises growing a first group III nitride semiconductor layer (20) onto the base substrate (10) along a growth direction (A) under a superstoichiometric nitrogen supply, wherein a surface (22) of the first group III nitride semiconductor layer (20) has depressions (24) which are bounded by facets (26) of the first group III nitride semiconductor layer (20) oriented obliquely to the growth direction (A). The method further comprises growing a second group III nitride semiconductor layer (30) covering the depressions (24) onto the first group III nitride semiconductor layer (20) along the growth direction (A). Furthermore, the invention relates to a semiconductor substrate (100) which is preferably produced by the method.
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