METHOD AND DEVICE FOR MANUFACTURING ELECTRICAL ACTIVE COMPONENTS

Abstract

A method comprises providing a substrate with an insulating layer on the same substrate or support, wherein the insulating layer has at least one opening to the substrate, inserting at least one supporting element into the at least one opening on the substrate, and depositing an active layer onto the at least one supporting element. An electroactive device according to some embodiments comprises a substrate, an active layer deposited thereon, and a support structure. A method for providing a support structure in an electroactive device according to some embodiments comprises providing a filament fabric, feeding and aligning filament sections by means of fixing devices, and aligning the insertion unit of the fixing device with the substrate. A device for manufacturing electroactive devices is also described.

Description

TECHNICAL APPLICATION AREA

[0001] The present disclosure relates to the manufacture and assembly of electroactive components. Furthermore, the present disclosure relates to a device for the manufacture of electroactive components. BASIS OF THE INVENTION

[0002] Electroactive components are devices that can be electrically active. For example, electromagnetic radiation striking an electroactive component can induce a voltage difference and / or generate an electric current. Electroactive components include, among others, stacks of materials that can store and / or release electrical energy through energy conversion, either by absorbing electrical energy or by acting as sensors that convert a change in incident energy into a change in electrical energy flow. The activity of an electroactive component depends on various properties, including its structure. For example, the activity of a photovoltaic cell depends, among other things, on the surface area of ​​the electroactive material exposed to incident radiation.

[0003] In general, it is desirable to increase the electroactivity of the electroactive component. OVERVIEW

[0004] The following summary provides a simplified overview of one or more aspects of the invention. It does not constitute a comprehensive description of the invention and is not intended to identify key elements or to define its scope of protection. Rather, its main purpose is to present some concepts of the invention in a simplified form as preparation for a later, more detailed description.

[0005] In one embodiment, a method comprises providing a substrate 210 with an insulating layer 230 on a support, wherein the insulating layer 230 has at least one opening to the substrate 210, inserting at least one trimmed filament blank 271a, 271b, 271c into the at least one opening on the support, and depositing an active layer 280 onto the at least one trimmed filament blank 271a, 271b, 271c. In some embodiments of the invention in this embodiment, the method is defined as in the corresponding independent method claim.

[0006] Another embodiment comprises a device for manufacturing electroactive components according to some exemplary embodiments, a cutting unit 1200 which fixes a filament fabric 1000 during cutting, wherein several filament blanks 1171 are aligned in a predetermined array, an insertion unit 1600 for receiving several filament blanks 1171, and a control system for controlling the insertion unit 1600 relative to a substrate 210 in order to enable the transfer of the filament blanks 1171 onto the substrate 210. In some embodiments of the invention in a further aspect, the device is defined according to the independent device claim.

[0007] Yet another embodiment comprises an electroactive device according to some exemplary embodiments, a substrate 310, an active layer 380 applied thereto, and a support structure 370, wherein the support structure 370 comprises an arrangement of trimmed filament sections 371a, 371b, 371c between the substrate 310 and the active layer 380. In some embodiments of the invention in this further aspect, the device is defined according to the independent device claim.

[0008] Another aspect comprises a method for providing a support structure 370 in an electroactive device according to some embodiments, including providing a filament fabric 1000 with several warp and weft threads 1071 / 1021, separating the weft thread 1021 from the warp thread 1071, feeding filament sections 1171 of the warp thread 1071 to a fixing device, and attaching the support structure 370 to a substrate 310. In some embodiments of the invention in this further aspect, the method comprises steps defined in the corresponding independent method claim.

[0009] Another further aspect comprises a filament fabric 1000 consisting of several dense sections of filament fabric 1020, formed by a plurality of warp and weft threads 1071 / 1021. Dense sections of filament fabric 1020 are separated from one another by widely spaced sections of filament fabric 1070, which are formed by sections of warp threads 1071 without weft threads 1021. In some embodiments of the invention, the filament fabric 1000 is provided according to the definition described in the independent claim relating to the filament fabric 1000.

[0010] The independent claims define the invention in various aspects. The dependent claims describe selected features of embodiments of the invention in each of these different aspects. It should be noted that features of these embodiments can be combined with one another unless expressly stated otherwise. For example, elements of method embodiments can be implemented in embodiments of the system. For example, features of one embodiment of the system can be used to perform steps of one embodiment of the method.

[0011] This summary is submitted on the condition that it will not be used to interpret or limit the scope or meaning of the claims. It is not intended to identify essential features of the claimed subject matter or to determine its scope. Further methods, devices, and systems are also disclosed. Persons skilled in the art will recognize further features and advantages upon reading the following detailed description and examining the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS The Fig. show a flowchart illustrating selected steps of a process for manufacturing an electroactive device according to some embodiments. The Fig. schematically show cross-sectional views of an exemplary semi-finished product in various steps of carrying out a manufacturing process according to some embodiments. Fig. is a diagram that schematically represents a cross-section of an exemplary semi-finished product according to some embodiments. Fig. is a drawing that schematically illustrates a cross-section of a layered structure in the semi-finished product according to some embodiments. Fig. is a drawing that schematically shows a top view of an exemplary semi-finished product in one of the various steps of the process described in the Fig. The manufacturing process shown is illustrated according to some embodiments. Fig. is a drawing that schematically represents an enlarged cross-sectional view of a part of the in Fig. The example semi-finished product shown represents the product. Fig. is a drawing that is in Fig. The device shown is schematically illustrated according to some embodiments. Fig. is a drawing that schematically illustrates the use of the in Fig. The device shown is illustrated in a sandwich arrangement according to some embodiments. The Fig. show a flowchart to illustrate the process steps according to some embodiments. Fig. is a drawing that schematically represents a filament fabric 1000 according to some embodiments. Fig. is a drawing that schematically represents an arrangement (filament blanks) 1100 according to some embodiments. The Fig. The drawings illustrate a device according to some embodiments. The Fig. The drawings illustrate a device according to some embodiments. The Fig. The drawings illustrate a device according to some embodiments. The Fig. The drawings illustrate a device according to some embodiments. The Fig. The drawings illustrate a device according to some embodiments. The Fig. illustrate the use of the in the Fig. The device shown, according to some embodiments. The Fig. show the use of the in the Fig. The device shown, according to some embodiments. The Fig. show the use of the in the Fig. The device shown, according to some embodiments. The Fig. illustrate the use of the in the Fig. The device shown, according to some embodiments. DETAILED DESCRIPTION OF THE INVENTION

[0012] The following sections explain embodiments, implementations, and associated effects with reference to the drawings. The views of the exemplary embodiments serve only to illustrate selected features. In particular, the cross-sectional views are not to scale, and the dimensions of the structures shown may differ from those in the illustrations. The same terms refer to the same elements throughout this text.

[0013] The embodiments described here can be combined with one another unless explicitly stated otherwise. In some cases, known features are omitted or simplified to clarify the description of the exemplary implementations. The order of the described embodiments / implementations and methods / processes is not to be understood as a restriction; any number of the described implementations and processes can be combined.

[0014] Fig. Figure 1 is a diagram that schematically represents a cross-section of an exemplary solar module stack assembly 300 according to some embodiments. The solar module stack assembly 300 comprises several stacked solar modules 301a, 301b, 301c (in Fig. (Only one cell 301b is fully shown, while the other stacked cells solar module 301a, 301c are only partially shown).

[0015] The following section describes the exemplary solar module stack structure 300 in more detail, explaining the layers, elements, and / or components of the exemplary solar module stack structure 300 from top to bottom. The term "top" refers to the representation in Fig. This is based on the use of the Solar Module Stack 300 in a solar module. In this module, the Solar Module Stack 300 can be exposed to sunlight and oriented accordingly. However, the term "top" and other directional specifications do not restrict how the exemplary Solar Module Stack 300 can be oriented or positioned within a complete product to ensure optimal solar exposure.

[0016] The exemplary solar module stack structure 300 comprises a carrier which, in the example of the solar module stack structure 300, forms a superstrat that is configured to lie above other layers and is thus oriented towards the sunlight incident on the solar module stack structure 300.

[0017] The support consists of a substrate 310. The exemplary solar module stack 300 further comprises a contact layer substrate 320. In some embodiments, the contact layer substrate 320 is arranged directly beneath the substrate 310. The solar module stack 300 also comprises a back contact layer 390 arranged beneath the contact layer substrate 320. The contact layer substrate 320 and the back contact layer 390 are electrically separated by an insulating layer 330 arranged between them. An active layer 380 is located between the contact layer substrate 320 and the back contact layer 390. In some embodiments, the active layer 380 is in electrical contact with the back contact layer 390. In some embodiments, the active layer 380 is arranged between the insulating layer 330 and the back contact layer 390. In some embodiments (not shown in Fig. In the figure shown, the active layer 380 is arranged between the substrate contact layer 320 and the backside contact layer 390, as well as the insulating layer 330. One effect is that the solar module stack structure 300 can be used as an active cell element in a solar module, the active cell element being configured to convert incident sunlight into electrical energy. In some embodiments, the electrical power is the product of voltage and current flow between the substrate contact layer 320 and the backside contact layer 390.

[0018] In some embodiments, the active layer 380 is part of a typical solar cell stack, as shown below by reference to Fig. briefly explained. Fig. The diagram schematically shows the layer structure of the solar module stack structure 300 according to some embodiments. In the Fig. In the illustrated embodiment, the layer structure comprises a front contact layer 385 and a back contact layer 390. In some embodiments, the active layer 380 is part of the layer structure. The active layer 380 can be characterized in some embodiments by one or more of the following properties: spectral sensitivity, chemical sensitivity, stoichiometric properties, alloy composition, crystallinity, and magnetic resistivity. In some embodiments, the active layer 380 is electroactive. In some embodiments, the active layer 380 is photoelectroactive. For example, the active layer 380 forms a stack that comprises only a substack. This substack comprises a semiconductor layer 388 with a p-doped region 387 facing the front contact layer 385 and an n-doped region 389 facing the back contact layer 390.In some embodiments, the active layer 380 is electrochemically active. The arrangement of the active layer 380 between the (second) front contact layer 385 and the back contact layer 390 creates a typical solar cell stack.

[0019] In some embodiments (not shown), the active layer 380 comprises a stack with multiple substacks. In some embodiments, these substacks consist of different substacks, each exhibiting different properties. For example, the different substacks differ with respect to one or more of the following characteristics: spectral sensitivity, chemical sensitivity, stoichiometric properties, alloy composition, crystalline properties, and magnetic resistivity. In an embodiment where multiple substacks are stacked on top of each other, this can, among other things, result in the stack comprising multiple cells.

[0020] In some embodiments, the active layer 380 consists of silicon, for example, amorphous silicon, microcrystalline silicon, and silicon alloys such as SiGe and SiC. In some embodiments, the active layer 380 consists of a III-V semiconductor compound, for example, GaN, GaAs, InP, or any combination thereof, for example, in one or more alloys. In some embodiments, the active layer 380 consists of gallium, for example, GaN and / or GaAs. In some embodiments, the active layer 380 consists of materials other than semiconductor materials, for example, a mineral such as perovskite. In some embodiments, the active layer 380 consists of an organic compound.

[0021] As in Fig. As shown, in some embodiments the contact layer substrate 320 is formed continuously on the substrate 310. Several openings in the contact layer substrate 332a, 332b, which are filled, for example, with insulating material from the insulating layer 330, form non-conductive insulating grooves in the contact layer substrate 320. This results in a structured contact layer substrate 320 in one plane along the solar module stack structure 300. This can, among other things, lead to several stack cells solar module 301a, 301b, 301c being electrically separated from each other at the level of the contact layer substrate 320. In some embodiments, the contact layer substrate 320 is otherwise homogeneous within each individual cell of the stack cells solar module 301a, 301b, 301c.

[0022] In some embodiments, the backside contact layer 390 extends continuously beneath the substrate 310. In some embodiments, the backside contact layer 390 comprises several openings 302a, 302b. In some embodiments, the openings 302a, 302b are formed as grooves, for example, by selectively removing material from the backside contact layer 390. For example, laser ablation can be used to create non-conductive insulating grooves in the backside contact layer 390. In some embodiments, the grooves are formed as parallel strips. Thus, the backside contact layer 390, viewed in a plane transverse to the solar module stack structure 300, is electrically structured. This can, among other things, result in the stack cells 301a, 301b, 301c being electrically separated from one another at the level of the backside contact layer 390.

[0023] The solar module stack structure 300 comprises a support structure 370 between the substrate contact layer 320 and the backside contact layer 390. In particular, in some embodiments, the support structure 370 is arranged between the substrate contact layer 320 and the active layer 380. In some embodiments, the support structure 370 consists of several trimmed filament sections 371a, 371b, and 371c. In some embodiments, the trimmed filament sections 371a, 371b, and 371c are separated from one another. In some embodiments, the trimmed filament sections 371a, 371b, and 371c are arranged in a predefined array. In some embodiments, the support structure 370 is formed by the trimmed filament blanks 371a, 371b, 371c, which are arranged as supporting elements perpendicular to the contact layer substrate 320 and / or substantially parallel to each other.In some embodiments, the numerous trimmed filament sections 371a, 371b, 371c each form a monolithic structure.

[0024] In some embodiments, at least one adhesive dot 360 is applied to the contact layer substrate 320, on which the support structure 370 is arranged. In some embodiments, the trimmed filament sections 371a, 371b, 371c are attached to the contact layer substrate 320 by means of adhesive dots 362a, 362b, 362c of the adhesive layer. In some embodiments (not shown), the trimmed filament sections 371a, 371b, 371c are soldered to the contact layer substrate 320. In some embodiments (not shown), the trimmed filament sections 371a, 371b, 371c are bonded to the contact layer substrate 320.

[0025] At least one effect can be an increase in the surface area available for supporting the active layer 380. The numerous trimmed filament sections 371a, 371b, 371c each have a contact surface facing the contact layer substrate 320 or the adhesive dots 362a, 362b, 362c, which connect the trimmed filament sections 371a, 371b, 371c to the contact layer substrate 320. Furthermore, the trimmed filament sections 371a, 371b, 371c each have a contact surface facing the material of a layer opposite the contact layer substrate 320 and are thus generally available for supporting the active layer 380. The surface area of ​​the trimmed filament sections 371a, 371b, 371c is larger than their contact area. For example, in some embodiments the surface area is 2 to 100 times larger than the base area.In some embodiments, the surface area is 3 to 80 times larger than the base area. In some embodiments, the surface area is 4 to 60 times larger than the base area. In some embodiments, the surface area is 5 to 40 times larger than the base area. In some embodiments, the surface area is 6 to 20 times larger than the base area. In some embodiments, the surface area is 7 to 16 times larger than the base area. In some embodiments, the surface area is 8 times larger than the base area. One effect can therefore be that each unit of a stimulus, such as radiation, striking a substrate surface 311 of the substrate 310 exposed to radiation, for example sunlight, can cause increased activity in the active layer 380.

[0026] A solar cell based on the semi-finished product including the device can expose a surface area of ​​the active layer 380 to the incident radiation that is larger than the flat surface of the solar cell itself irradiated by the incident radiation. To illustrate selected effects, we will now refer to Fig. referred to. This drawing schematically shows an exemplary use of the in Fig. The device shown, according to some embodiments. Some details from Fig. are in Fig. not shown. In this example, the device is rotated such that the substrate 310 forms a support, but the device is exposed to radiation incident from the side opposite the substrate 310, i.e., from above. Regarding the material in the active layer, as shown in Fig. and Fig. As shown, in several areas to be retained (active layer) 381a, 381b, 381c of the active layer 380, they exhibit a particularly large surface area to volume ratio. In some embodiments, this ratio is, for example, about eight times larger than in a flat cell. To give an example: With an active layer thickness of 1 µm (micrometer), the volume of the active layer in a conventional flat cell with an area of ​​1 cm² is 2 10 8 µm 3 In one exemplary embodiment, however, the support structure consists of a cell substrate with an area of ​​1 cm². 2from an arrangement of 6400 columns aligned and positioned perpendicularly on the substrate. In this embodiment, a column has a cylindrical shape with a radius of the cylinder cross-section perpendicular to the cylinder axis of, for example, 40 µm and a height of, for example, 500 µm. Accordingly, the volume of a 1 µm thick active layer applied to the cell substrate with the exemplary support structure is approximately 8.4 × 10 8 µm 3 The values ​​mentioned above for the number of columns arranged on the surface, the column shape, the radius, the height, etc., serve only as examples and may differ from the actual values. For example, the deviation may be between -50% and +50% of the value mentioned above.

[0027] One effect can be, among other things, that the in Fig. Radiation represented by multiple arrows is more likely to strike the active regions to be retained (active layer) 381a, 381b, 381c at an angle close to the reflection angle. Radiation striking the surface at an angle close to the reflection angle and passing through an interface to propagate within the active layer 380 tends to propagate there as if in a waveguide. This allows the radiation to cause stronger activation than simply passing through the active layer 380, which is more common in a material with a lower surface-to-volume ratio.

[0028] In some embodiments, a further increase in the efficiency of a solar module can be achieved by stacking two components, as in Fig. Figure 1 shows a schematically illustrating an exemplary section of a solar module according to some embodiments. In some embodiments, the solar module comprises two components. The first component consists of a substrate (first module unit 1310), and the second of a substrate (second module unit 2310). The first component comprises a support structure 370 with several trimmed filament sections (first module unit 1371a, 1371b, and 1371c) arranged upright above the substrate (first module unit 1310). The second component comprises a support structure 370 with several trimmed filament sections (second module unit 2371a, 2371b, and 2371c) arranged upright below the substrate (second module unit 2310). As already shown in the example in Figure 1, the second component comprises a support structure 370 with several trimmed filament sections (second module unit 2371a, 2371b, and 2371c) arranged upright below the substrate (second module unit 2310). Fig. As described in the illustrated component, the top surface of the substrate second module unit 2310 is transparent to radiation incident on the solar module at frequencies at which the radiation induces electroactive properties in the active layer regions 1381a, 1381b and 1381c or 2381a, 2381b and 2381c, respectively. In contrast, the top surface of the substrate first module unit 1310 can be radiation-reflecting in some embodiments.

[0029] As in Fig. In some embodiments, the upper layers of the components are shown facing each other. Thanks to the regularity of the support structure 270, formed by the trimmed filament sections of the first module unit 1371a, 1371b, 1371c of the first component, and the corresponding support structure 370, formed by the trimmed filament sections 2371a, 2371b, 2371c of the second component, the first and second components can be arranged so closely together that a tooth-like connection of the upper layers is created. This can, among other things, lead to a further increase in the efficiency of the solar module. With such a solar module surface 800 exposed to the incident light, the solar module enables a particularly long propagation path of the radiation in the electroactive material of the electroactive layer, thereby increasing the electroactivity of the solar module.It is also conceivable to stack several layers in pairs to further improve efficiency. In such embodiments, the support for all components except the bottommost layer is configured to avoid reflections of radiation at frequencies where the active layers are electroactive. In some embodiments where the solar module comprises multiple components, a first active material in the active layer of a first component can differ from a second active material in the active layer of a second component in that the frequency of the radiation that triggers electroactivity in the active layer differs. This allows incident radiation across a broader frequency range to be used to generate electroactivity, thereby increasing the efficiency of the solar module.

[0030] The following describes a method for producing a semi-finished product according to several embodiments. Reference is made to the Fig. , which represent a flowchart with selected steps of an exemplary process 100a, 100b for the fabrication of an electroactive component according to some embodiments. Reference is also made to the Fig. Reference is made to schematic cross-sectional views of an exemplary semi-finished product in various steps of carrying out a manufacturing process according to some embodiments, such as the flowcharts of the Fig. The procedures shown illustrate the process.

[0031] As described below, the semi-finished product is built up layer by layer in some embodiments. In some embodiments, the layers of the semi-finished product are built up sequentially, starting with a top layer, which, due to the sequence of deposition steps beginning with the top layer, can be referred to as substrate 210. As explained below, substrate 210 forms the basis for further layers that are applied in the exemplary manufacturing process.

[0032] In S105, the method comprises providing a substrate 210. In some embodiments, the substrate 210 is essentially transparent to the radiation to which the electroactive component is to be exposed and which is used, for example, for power generation. In some embodiments, the substrate 210 consists of glass. In some embodiments, the substrate 210 consists of at least one of the following types of glass: float glass or tempered glass. In some embodiments, the substrate 210 forms a support for the semi-finished product. In some embodiments, the finished product can be a solar module based on and / or comprising the semi-finished product, as shown, for example, above. Fig. The following is explained, which illustrates the exemplary solar module stack structure 300. In some embodiments, the substrate is configured so that it is exposed to the radiation incident on the finished product, such as sunlight incident on the solar module.

[0033] In S110, the process continues to include the deposition of a contact layer of substrate 220 onto the substrate 210, as in Fig. The contact layer substrate 220 is shown. In some embodiments, the contact layer substrate 220 is charge-conducting. In some embodiments, the material of the contact layer substrate 220 consists of at least one of the following electrically conductive thin-film oxides: for example, aluminum-doped zinc oxide (AZO), zinc oxide (ZnO), or indium oxide (ITO). In some embodiments, where the substrate 210 is not the first to come into contact with the radiation, the contact layer substrate 220 becomes a backside contact layer 290. In some embodiments, the material of the contact layer substrate 220 consists of at least one of the following electrically conductive thin-film oxides: for example, aluminum-doped zinc oxide (AZO), zinc oxide (ZnO), or indium oxide (ITO), as well as a metal such as aluminum (Al) or molybdenum (Mo).In some embodiments, where the contact layer substrate 220 consists of electrically conductive thin-film oxides, the contact layer substrate 220 is essentially transparent to radiation in a spectral range in which the electroactive device is configured electroactively.

[0034] In some embodiments, the contact layer substrate 220 is located at position S115 as shown in Fig. The substrate 220 is structured as shown. For example, in some embodiments, a laser is used to structure the contact layer substrate 220, such as by irradiating selected areas of the contact layer substrate 220, thereby removing material. In other embodiments, the contact layer substrate 220 is structured using a masking process. In some embodiments, the structuring of the contact layer substrate 220 comprises contact strips substrate 220a, 220b, which may, for example, be aligned parallel to each other. The structuring of the contact layer substrate 220 enables the substrate 210 to accommodate multiple cells. Through the structuring, several areas on the substrate 210, which are associated with the cells, are electrically separated from each other at the level of the contact layer substrate 220. For example, in Fig. The right flank of a first contact strip of substrate 220a forms the positive terminal (negative terminal) of a first thin-film solar cell, while the left flank of a second contact strip of substrate 220b forms the negative terminal (positive terminal) of a second thin-film solar cell. As described below, further process steps can be applied to establish electrical connections between the individual cells, for example, by electrically connecting the first and second terminals, as required. This allows at least two cells to be connected in series, the electrical activity of which contributes to the sum of the cell voltages, which are output by the solar module as the module voltage. In some embodiments, at least two cells can be connected in parallel, with each cell contributing to the sum of the cell currents, resulting in a total current at a given cell output voltage.

[0035] In S120, the process further comprises the deposition of an insulating layer 230 over the substrate 210. In particular, the insulating layer 230 can be applied to the contact layer substrate 220, as in the example in Fig. As shown. In some embodiments, the insulating layer 230 completely covers the top surface of the substrate 210, which at this stage is formed by the structured contact layer substrate 220. In some embodiments, the insulating layer 230 consists of at least one material from the following material groups: aluminum oxide Al x O y , silicon nitride Si x N y , silicon dioxide SiO y , silicon oxynitride Si x O y N z and any combination thereof.

[0036] Some embodiments further include structuring the insulating layer 230 to form at least one contact opening (series / parallel circuit 231) in order to expose a corresponding section of the underlying contact layer (substrate 220). For example, in some embodiments of S125, the method includes introducing several contact openings (series / parallel circuit 231a, 231b, 231c) into the insulating layer 230, as shown in Fig. This is shown. This ensures that the sections of the contact layer substrate 220 connected to the contact openings (series / parallel connection 231a, 231b, 231c) remain accessible for further processing. In the finished product, a series connection of cells can thus be achieved.

[0037] Some embodiments further include structuring the insulating layer 230 to form at least one opening in the insulating layer 232 to the associated area of ​​the contact layer substrate 220 deposited beneath the insulating layer 230. For example, in some embodiments of S125, the method includes forming several openings in the insulating layer 232a, 232b, 232c, as shown in Fig. As shown. One effect may be that the selected / visible areas of contact layer substrate 222a, 222b, 222c of contact layer substrate 220, which are connected to the openings of insulation layer 232a, 232b, 232c, continue to enable their processing.

[0038] To produce the at least one contact opening series / parallel circuit 231a, 231b, 231c and / or the at least one opening in the insulating layer 232a, 232b, 232c in the insulating layer 230, in some embodiments - as in the example in Fig. The etchant is selectively applied as an etchant layer 240 formed on the insulating layer 230. For example, a screen printing process can be used to selectively apply the etchant to the insulating layer 230, with the etchant replacing the ink in a conventional screen printing process. In some embodiments, the etchant consists of, for example, an etching paste. In some embodiments, the etching paste consists of a solid etchant component, such as a powder or an emulsion, and / or a liquid etchant component, such as a solution. In some embodiments, the etchant is selected such that it selectively etches the insulating material of the insulating layer 230.Provided that the underlying materials do not have the same or similar chemical and physical properties as the material of the insulating layer 230, the layer below the insulating layer 230 is essentially unaffected by the etchant and thus remains unchanged. In some embodiments, the etchant comprises one or more etchants from the group consisting of hydrofluoric acid (HF) and phosphoric acid (H3PO4).

[0039] Some embodiments further include the removal of etching residues. At least one effect can be the cleaning of the substrate 210. In particular, for selected areas of the etchant layer 241a, 241b, 241c, 242a, 242b, 242c, the etchant is deposited on the insulating layer 230, while in other, selected etched areas 244a, 244b, 244c, the insulating layer 230 is free of etchant.

[0040] In some alternative embodiments, forming the at least one contact opening series / parallel circuit 231a, 231b, 231c in the insulating layer 230 and / or forming the at least one opening insulating layer 232a, 232b, 232c in the insulating layer 230 includes the selective application of a resistant material to the insulating layer 230 to form an etching mask (not shown). In some embodiments, the etching mask is configured to selectively protect the underlying layers, such as the insulating layer 230 material, from an etchant. For example, the etching mask is exposed to radiation 261 that modifies a predetermined property of selected areas of the etchant layer 241a, 241b, 241c, 242a, 242b, 242c.In some embodiments, the resistant material is a positive photoresist, for example, a photoresist resin, which cures and cross-links in selected areas of the etch mask layer. The resistant varnish is then removed from the areas that were not selectively cured / cross-linked. For example, a cleaning step (not shown) is performed to rinse uncross-linked resin from the semi-finished product toward the yield strength of a solar module stack assembly. An etchant can then be applied to etch selected areas of the insulating layer 230 that are not protected by the etch mask and are therefore exposed to the etchant.

[0041] In step S125, the insulation layer 230 is selectively etched. Fig. schematically shows a top view of an exemplary semi-finished product in one of the various steps of the process. Fig. The manufacturing process described, according to some embodiments. As in Fig. As shown, selective etching of the insulating layer 230 in step S125 can create an opening in the insulating layer 232a, 232b, 232c, through which selected areas of the contact layer substrate 222a, 222b, 222c are exposed, corresponding to the selected areas of the etchant layer 242a, 242b, 242c described above. While in the example in Fig. Since at least one opening in the insulating layer 232a, 232b, 232c is essentially circular, other embodiments with one or more differently shaped openings in the insulating layer 230 are also conceivable. Furthermore, the substrate 210 has exposed, selected areas of the insulating layer 234a, 234b, 234c, which correspond to the selected etched areas 244a, 244b, 244c described above, as in the example in Fig. depicted.

[0042] Some embodiments further include the application of a resist layer to the insulating layer 230. At least one effect can be that the top surface of the insulating layer 230 is covered with the resist layer. In some embodiments, a photoresist mask is formed with the aid of the resist layer. For example, in S130, a photoresist layer / hard mask 250 is applied to the substrate 210. In some embodiments, the photoresist layer / hard mask 250 comprises a negative photoresist. At least one effect can be that the areas of the photoresist layer / hard mask 250 exposed to the radiation 261 harden, i.e., the polymer chains of this resin cross-link. In an alternative embodiment, the photoresist layer / hard mask 250 comprises a positive photoresist.

[0043] In some embodiments of S135, the photoresist layer / hard mask 250 is irradiated with radiation 261 directed at a structured mask 260 above the photoresist layer / hard mask 250, as shown in Fig. The structured mask 260 shields parts of the photoresist layer / hard mask 250 from the radiation 261, while other areas remain exposed to the radiation 261. The structured mask 260 thus serves to selectively expose the photoresist layer / hard mask 250 to the radiation 261. One effect can be, for example, the hardening / crosslinking of selected areas of the photoresist layer / hard mask 256a, 256b, 256c, particularly when using a negative photoresist.

[0044] In some embodiments, an etching and / or cleaning step is performed on the substrate 210 at S140, removing non-crosslinked material from the photoresist layer / hard mask 250, while crosslinked material from the photoresist layer / hard mask 250 continues to cover parts of the insulating layer 230 and / or the underlying contact layer substrate 220. This can, among other things, result in crosslinked photoresist material from the photoresist layer / hard mask 250 forming a hard mask 259 over the insulating layer 230, as shown in Fig. The photoresist layer / hard mask 250 can further comprise at least one opening in the photoresist layer / hard mask 252a, 252b, 252c. In some embodiments, the photoresist layer / hard mask 250 comprises at least one opening in the photoresist layer / hard mask 252a, 252b, 252c, which is arranged such that a central section of the at least one opening in the insulation layer 232a, 232b, 232c is exposed in the insulation layer 230, thereby enabling the at least one opening in the photoresist layer / hard mask 252a, 252b, 252c in the hard mask 259 to be configured such that a central section of the at least one opening in the insulation layer 232a, 232b, 232c is exposed in the insulation layer 230.

[0045] Fig. schematically shows an enlarged cross-section of an exemplary semi-finished product after performing step S140 according to Fig. In particular, it shows Fig. an enlarged view of a section of the in Fig. In the illustrated embodiment, the cross-linking is approximately along the dashed circle line. In some embodiments, the side profile of the photoresist layer / hard mask 254 of the at least one opening in the photoresist layer / hard mask 252a, 252b, 252c has a negative undercut. This undercut of the side profile of the photoresist layer / hard mask 254 arises, for example, during exposure of the photoresist layer / hard mask 250 with radiation 261 at S135. In a transition region of the photoresist layer / hard mask 250, where a portion of the photoresist exposed to radiation 261 transitions into a portion shaded by the structured mask 260, the photoresist is less strongly cross-linked than in other regions. For example, the resin in the transition region between a fully exposed and a shaded region of the photoresist layer / hard mask 250 does not cure as strongly as the resin in the fully exposed region.In some embodiments (not shown), the irradiation of the photoresist layer / hard mask 250 can occur at an angle other than perpendicular, making the undercut in the side wall more pronounced. A consequence of the undercut created in the side profile of the photoresist layer / hard mask 254 may be that, in the opening area, a protruding upper part of the photoresist layer / hard mask 250 shadows a lower side wall region of the photoresist layer / hard mask 250.

[0046] One effect of the formation of the at least one opening in the insulating layer 232a, 232b, 232c in the insulating layer 230 can be, among other things, that selected areas of the contact layer substrate 222a, 222b, 222c of the contact layer substrate 220 are exposed through the at least one opening in the insulating layer 232a, 232b, 232c in the insulating layer 230.

[0047] Some embodiments further include baking the photoresist layer / hard mask 250 at S145. One effect may be that the material of the photoresist layer / hard mask 250 further hardens and stabilizes the hard mask 259 on the insulating layer 230.

[0048] Some embodiments of S150 further include the application of an adhesive to the substrate 210. In some embodiments, the adhesive is applied to the contact layer substrate 220, as in the example in Fig. As shown, in some embodiments, adhesion of the adhesive to substrate 210 is important, but direct contact of the adhesive with the contact layer substrate 220 is not required. Accordingly, in one example (not shown), the adhesive is applied to another layer, for example a protective layer, above the contact layer substrate 220.

[0049] Some embodiments further include forming an adhesive pattern in an adhesive layer. In some embodiments, the pattern has two-dimensional symmetry. In some embodiments, adhesive is applied to the contact layer substrate 220 not in every opening of the insulating layer 232a, 232b, 232c, but only in selected openings.

[0050] In some embodiments, the adhesive layer is patterned using a mask. In some embodiments, the mask is configured to selectively apply the adhesive to the substrate 210. In some embodiments, the patterning of the adhesive layer comprises at least one of the additive manufacturing processes, including screen printing, pore printing, and dispensing printing. In some embodiments, the patterning of the adhesive layer comprises applying a homogeneous adhesive layer to the substrate 210 and removing selected areas of the adhesive layer from the substrate 210 using a mask to selectively remove or otherwise detach adhesive from the homogeneous adhesive layer on the substrate 210.

[0051] In some embodiments, dispensing printing includes inkjet printing. In some embodiments, the pattern includes at least one adhesive dot 262a, 262b, 262c. For example, as in Fig. As shown schematically, at least one adhesive dot 262a, 262b, 262c is selectively applied to the substrate 210. In some embodiments, the at least one adhesive dot 262a, 262b, 262c is located exclusively on the contact layer substrate 220. In some embodiments, the at least one adhesive dot 262a, 262b, 262c covers an incomplete portion of the exposed area of ​​the contact layer substrate 220 in the openings provided in the insulating layer 232a, 232b, 232c. In some embodiments, one adhesive dot 262a, 262b, 262c is formed per opening in the insulating layer 232a, 232b, 232c. In some embodiments, several adhesive dots 262a, 262b, 262c are formed on the contact layer substrate 220 per opening in the insulating layer 232a, 232b, 232c.

[0052] According to S155, the exemplary method further comprises applying a carrier structure 270 to the substrate 210. In some embodiments, attaching the carrier structure 270 to the substrate 210 includes attaching at least one trimmed filament section 271a, 271b, 271c of the carrier structure 270 to the adhesive layer. This allows the carrier structure 270 to be attached to the contact layer, among other methods, by means of the adhesive in the adhesive layer. An exemplary method for providing the carrier structure 270, including the at least one associated trimmed filament section 271a, 271b, 271c, is described in detail below.

[0053] In some embodiments, such as in Fig. As shown, the process step for attaching the support structure 270 to the substrate 210 comprises the insertion of at least one trimmed filament blank 271a, 271b, 271c into the at least one opening in the insulating layer 232a, 232b, 232c above the contact layer substrate 220.

[0054] In some embodiments, attaching the at least one trimmed filament section 271a, 271b, 271c to the substrate 210 includes providing a support structure 270 to which at least one trimmed filament section 271a, 271b, 271c is associated. In some embodiments, the support structure 270 is configured to fix the at least one trimmed filament section 271a, 271b, 271c at at least one associated holding position. In some embodiments, the at least one trimmed filament section 271a, 271b, 271c is long enough to protrude from the holder. In some embodiments (not shown), the support structure 270 comprises an adhesive layer that fixes the trimmed filament blank 271a, 271b, 271c in an associated support structure 270.

[0055] In some embodiments, such as in the example of the Fig. As shown, attaching the at least one trimmed filament section 271a, 271b, 271c consists of folding over the substrate 210, whose adhesive points 262a, 262b, 262c point towards the mounting side on the mounting surface.

[0056] In some embodiments, such as in Fig. As described in more detail below, an insertion unit 1600 serves as a holder. The insertion unit 1600 is configured to receive the at least one trimmed filament blank 271a, 271b, 271c. In some embodiments, the insertion unit 1600 includes a chuck, hereinafter also referred to as the suction plate (insertion unit) 1610. The suction plate (insertion unit) 1610 can, among other things, hold the at least one trimmed filament blank 271a, 271b, 271c in the recess of the through-hole of the suction plate (insertion unit) 1671a, 1671b, 1671c via a corresponding through-hole. In some embodiments, as in Fig. As shown, the corresponding at least one through-hole suction plate (insertion unit) 1671a, 1671b, 1671c is provided as a through-hole, the wall of which has a step configured for a filament blank 1171 as a trimmed filament blank 271a, 271b, 271c, which is inserted into the corresponding at least one through-hole suction plate (insertion unit) 1671a, 1671b, 1671c and sits on the step.

[0057] The insertion unit 1600 and the substrate 210 are configured to be movable relative to each other, so that the trimmed filament sections 271a, 271b, 271c are positioned on corresponding adhesive points 262a, 262b, 262c. In some embodiments, at least one trimmed filament section 271a, 271b, 271c is thus positioned on at least one adhesive point 262a, 262b, 262c.

[0058] Some embodiments also include the curing of the adhesive.

[0059] Some embodiments further include detaching the holder from the at least one trimmed filament blank 271a, 271b, 271c.

[0060] In relation to Fig. Several separate, trimmed filament sections 271a, 271b, and 271c are arranged on the substrate 210 and together form the support structure 270. In an alternative embodiment, a similar support structure 270 is produced by embossing lithography and photoresist. One effect can be that a semi-finished product with the support structure 270 offers an enlarged deposition area in a subsequent coating step.

[0061] In the case of S160, as in Fig. As shown, in some embodiments the method includes the deposition of a conductive front layer (not shown). Fig. shown) above the substrate 210 and an active layer 280 on this conductive front layer. The conductive front layer can be designed as a conductive section of the active layer 280. As shown above, for example, by means of Fig. As described, the active layer 280 can be realized as a typical solar cell stack. In some embodiments, the conductive front layer is applied directly to the support structure 270; the active layer 280 is then deposited thereon. In some embodiments, the process after deposition of the front conductive layer can include depositing permanent areas (active layer) 281a, 281b, 281c of the active layer 280, in particular onto the front conductive layer on the at least one trimmed filament blank 271a, 271b, 271c of the support structure 270, and / or depositing removable areas (active layer) 282a, 282b, 282c of the active layer 280 onto the front conductive layer above the hard mask 259.One effect can be that the active layer 280 covers at least one trimmed filament section 271a, 271b, 271c as well as the selected areas photoresist / hard mask 256a, 256b, 256c of the cured photoresist layer / hard mask 250, as in the example in . Fig. shown. One possible effect is that the surface area of ​​the active layer 280 is significantly larger than the surface area perpendicular to the normal on the substrate 210.

[0062] Some embodiments further include the removal of the photoresist layer / hard mask 250 at position S165. In particular, this removes the hard mask 259. At least one consequence of this is that the selected areas of insulation layer 234a, 234b and 234c of insulation layer 230 are exposed, as shown in Fig. This figure shows a cross-section of the exemplary semi-finished product. In some embodiments, removing the photoresist layer / hard mask 250 involves lifting the photoresist layer / hard mask 250 from the insulating layer 230. At least one consequence of this is the removal of the photoresist. In some embodiments, lifting the photoresist layer / hard mask 250 from the insulating layer 230 involves selectively removing the photoresist layer / hard mask 250. In some embodiments, lifting the photoresist layer / hard mask 250 from the insulating layer 230 involves selectively etching the photoresist, but not the active layer 280. In an alternative embodiment, a hard mask is used instead of photoresist in the lifting process described above. The hard mask consists, for example, of at least two superimposed hard mask layers.These two layers can differ in their respective material composition. One effect can be to enable a selective, isotropic etching process that results in an undercut profile in the lower layer of these two superimposed layers. In another embodiment, a removable hard mask is applied to the substrate. Fig. The layer stacks shown were placed and aligned. After deposition, to create a structure similar to that in Fig. To create the structure shown, the removable hard mask can be removed and reused after cleaning.

[0063] Some embodiments of S170 further include a backside contact layer 290 above the active layer 280, as in the example in Fig. The backside contact layer 290 is shown. As already explained in connection with the contact layer substrate 220, the backside contact layer 290 can consist of electrically conductive thin-film oxides. The backside contact layer 290 can be essentially transparent in the frequency range in which the electroactive component is electroactive.

[0064] In some embodiments of S175, the back-side contact layer 290 is selectively removed over the corresponding sections of the insulating layer 230. This results in, as shown in Fig. The figure shows several back-contact interruptions 202a, 202b above the insulating layer 230. In some embodiments, the selective removal is achieved by laser irradiation of the areas of the back-contact layer 290 to be removed. In other embodiments, the back-contact layer 290 is etched. The selective material removal from the back-contact layer 290 can, among other things, result in the formation of several cells 201a, 201b, 201c on the substrate 210, whose back-contact layer sections 290a, 290b, 290c are electrically separated from one another. This makes the cells 201a, 201b, 201c electrically distinguishable from one another. In some embodiments, the cells 201a, 201b, 201c are coupled. In some embodiments, the cells 201a, 201b, 201c are connected in parallel.In some embodiments, a first and a second number of cells 201a, 201b, 201c are connected in parallel, wherein the first and the second number of cells 201a, 201b, 201c are connected in series. In some embodiments, a first and a second number of cells 201a, 201b, 201c are connected in series, wherein the first and the second number of cells 201a, 201b, 201c are connected in parallel.

[0065] With S199, further steps to complete a solar module can be carried out using the semi-finished product.

[0066] An exemplary embodiment of a device for manufacturing electroactive components is now described. The device serves, in particular, to manufacture a support structure 270 for the active layer 280 of the electroactive component. More precisely, the device manufactures a support structure 270 with several trimmed filament sections 271a, 271b, 271c arranged in an array. In some embodiments, the trimmed filament sections 271a, 271b, 271c are mounted on a substrate 210, such as the one described in Fig. described substrate 210, arranged.

[0067] In some embodiments, the device comprises at least one container for molten glass. In some embodiments, the container comprises several nozzles. In some embodiments, the container comprises one or more nozzle arrays in which the nozzles are arranged. In some embodiments, the container is configured so that a filament can be drawn from the nozzle. In some embodiments, the nozzle array is configured so that it can draw multiple filaments from the nozzles arranged in the nozzle array.

[0068] In some embodiments, the device is configured to calibrate the thread as it exits the nozzle. In some embodiments, the device comprises multiple spools. In some embodiments, the device is configured to wind weft threads 1021 onto one spool. In some embodiments, the device is configured to wind multiple warp threads 1071 onto a corresponding number of spools.

[0069] In some embodiments, the device includes a weft bobbin holder designed to hold the weft thread bobbin. In some embodiments, the device includes multiple warp bobbin holders designed to hold the warp thread bobbins.

[0070] In some embodiments, the device is configured for weaving the filament fabric 1000. In some embodiments, the device comprises a loom for producing the filament fabric 1000, consisting of weft and several warp threads 1021 / 1071. In some embodiments, the device comprises a loom for weaving a filament fabric 1000. In some embodiments, the loom is configured to receive the weft thread 1021 from the weft thread spool and the several warp threads 1071 from the several warp thread spools. In some embodiments, the device is configured to control the loom so that the filament fabric 1000 is woven according to the predetermined arrangement pattern. In some embodiments, the device is configured to shape the filament fabric 1000 so that the arrangement pattern of the filament fabric 1000 matches a predetermined arrangement pattern.

[0071] Fig. Figure 1 schematically shows a filament fabric 1000 according to several embodiments. In some embodiments, the filament fabric 1000 is woven. In some embodiments, the filament fabric 1000 consists of several warp threads 1071 and weft threads 1021. In some embodiments, the filament fabric 1000 is woven according to the specified arrangement plan. In the example in Fig. The filament fabric 1000 comprises several dense sections of filament fabric 1020, wherein the several warp threads 1071 and the weft thread 1021 form a dense filament fabric 1000 with a first mesh size in the range of, for example, 100 µm to 1000 µm. In the example, the filament fabric 1000 has wide-mesh sections of filament fabric 1070 with a large mesh size, which create spaces between the dense sections of filament fabric 1020 with a small mesh size. In such a wide-mesh section of filament fabric 1070, the distance 1072 between adjacent dense sections of filament fabric 1020 can be, for example, between 2 mm and 200 mm. In some embodiments, the dense sections of filament fabric 1020 have a width of at least 2 mm. This can, among other things, create a filament fabric 1000 that is sufficiently stable for a subsequent processing step.

[0072] In some embodiments, the length of the filament fabric 1000 ranges, for example, from 100 mm to 10000 mm. In some embodiments, the length of the filament fabric 1000 ranges from 500 mm to 5000 mm. In some embodiments, the length of the filament fabric 1000 ranges from 1000 mm to 1500 mm.

[0073] In some embodiments, for example, the mesh size of the filament ranges from 100 mm to 5000 mm. In some embodiments, the mesh size of the filament ranges from 500 mm to 4000 mm. In some embodiments, the mesh size of the filament ranges from 2000 mm to 3000 mm.

[0074] In some embodiments, the spacing 1072 between adjacent parallel threads of the weft thread 1021 is, for example, 0.1 mm to 1 mm; in other embodiments, it is 0.4 mm to 0.8 mm. The cross-sectional diameter of the weft thread 1021 is, for example, 0.01 mm to 1 mm. In some embodiments, it is 0.08 mm to 0.2 mm.

[0075] In some embodiments, the distance between adjacent parallel warp threads 1071 is, for example, 0.1 mm to 1 mm; in other embodiments, it is 0.4 mm to 0.8 mm. The cross-sectional diameter of the weft thread 1021 can be between 90 µm and 1,000 µm. In some embodiments, it is 50 µm to 300 µm, in others 90 µm to 100 µm, and in still others approximately 95 µm.

[0076] It is understood that any combination of the exemplary specifications of the filament fabric 1000 mentioned above can also be implemented. Although the filament fabric 1000 described above is made of glass fiber, other materials can also be used, provided that the supporting elements manufactured with this material can withstand the high temperatures and other demanding conditions of the subsequent process steps to which the substrate 210 is exposed after the support structure 270 has been attached. For example, a filament fabric 1000 that conforms to a combination of the specifications and / or materials described above can be used in a sensor.

[0077] The filament material can consist of metals such as copper, aluminum, and palladium. The filament can be coated. In some embodiments, the filament is coated with metal. In other embodiments, the filament is covered with an insulating layer. For example, a metal wire can be provided with an insulating layer. At least one effect can be the provision of a three-dimensional thin-film transistor configuration. This configuration can be implemented, for example, in a sensor.

[0078] According to one aspect of the invention, a device for manufacturing electroactive components comprises a cutting unit 1200 configured to fix a filament fabric 1000 during cutting, aligning a plurality of filament blanks 1171 with a predetermined array layout, an insertion unit 1600 configured to receive a plurality of filament blanks 1171, and a control system configured to control the movement of the insertion unit 1600 relative to a substrate 210 to enable the transfer of the plurality of filament blanks 1171 onto the substrate 210.

[0079] In some embodiments, which are described in more detail below with reference to the drawings, the device comprises one or more cutting units 1200, overhead transport units 1300, angular adjustment units 1400, vertical adjustment units 1500, and insertion units 1600. A surface on one side of the respective device, hereinafter referred to as the "front side" / "top side," is substantially planar. This substantially planar surface has an arrangement of receiving structures for receiving multiple filament blanks 1171. Each receiving structure has a through-hole that establishes a pressure transmission between the front side of a unit and an opposite side of a unit that faces the substantially planar surface of the front side.

[0080] In some embodiments, the device comprises a control system that controls one or more drive units, which in turn drive an associated component of the device coupled to the drive units, as well as a control unit for controlling the movement of the associated component. In some embodiments, the control system comprises one or more drive units that move the cutting unit 1200, the overhead transport unit 1300, the angle adjustment unit 1400, the vertical adjustment unit 1500, and / or the insertion unit 1600 relative to one another to enable the orderly transfer of multiple filament blanks 1171 from one unit to another.In some embodiments, the control system is configured to generate a pressure differential between the top and bottom surfaces of the respective unit in order to fix filament blanks 1171 within the respective unit and / or to release the filament blanks 1171 globally or selectively from the respective unit, as explained in more detail below. In some embodiments, the control system is configured to shape the filament fabric 1000 according to the predetermined array layout. In some embodiments, the control system is configured to align the filament fabric 1000 to achieve a match between a layout comprising the filament blanks 1171 and the predetermined array layout.

[0081] In some embodiments, the device comprises a cutting unit 1200 configured to separate the weft thread 1021 of the filament fabric 1000 from the filament fabric 1000 to obtain the plurality of filament blanks 1171. In some embodiments, the cutting unit 1200 is configured to cut the filament fabric 1000 at least on one side of the dense fabric area. At least one effect can be the generation of the plurality of filament blanks 1171. At least one effect can be that the plurality of filament blanks 1171 are aligned according to the predetermined arrangement after the weft thread 1021 has been separated from the filament fabric 1000.

[0082] In some embodiments, the insertion unit 1600 comprises an intake plate (insertion unit) 1610 with an arrangement of receiving structures, each of which receives a filament blank 1171. In some embodiments, the receiving structures of the insertion unit 1600 each have at least one through-hole (insertion unit) 1671 that penetrates the intake plate. In some embodiments, such as in Fig. As shown, the wall of each through-hole (insertion unit) 1671 has a step that aligns a filament blank 1171 inserted into the through-hole (insertion unit) 1671. In some embodiments, the device is configured to generate a negative pressure gradient between a first pressure on the upper side of the suction plate (insertion unit) 1630 facing the filament, which draws in or holds the filament blanks 1171, and a second pressure on the lower side of the suction plate (insertion unit) 1620 facing away from the filament. This causes the filament blanks 1171 to be drawn into a corresponding receiving structure of the receiving arrangement.

[0083] In some embodiments, the holes of the hole arrangement are cylindrical. In other embodiments, the holes of the hole arrangement widen on the underside of the suction plates. In some embodiments, the control system is configured to control the position of the device relative to the filament blanks 1171 such that the free ends of the filament blank 1171a, after being drawn in by the suction plate, firmly contact the respective bottoms of the holes.

[0084] In some embodiments, the control system is configured to align the multitude of filament blanks 1171 in a predetermined direction towards the suction plate.

[0085] In some embodiments, the surface of the intake plate is essentially planar, and the specified direction with respect to the intake plate is perpendicular to the surface of the intake plate.

[0086] In some embodiments, the device is configured such that the intake plate is electrostatically charged. One effect of this charge is that it transfers the electrostatic charge to the filament blanks 1171 located in the holes of the intake plate, thereby aligning the filament blanks 1171 upright.

[0087] In some embodiments, the device is configured to control its position relative to the substrate 210 in order to align the plurality of filament blanks 1171 in an arrangement of target positions on the substrate 210. In some embodiments, the device is configured to place the plurality of filament blanks 1171 on the substrate 210, with at least one free end of filament blank 1171a of the plurality of filament blanks 1171 touching the substrate 210 in the arrangement of target positions.

[0088] In some embodiments, the device is configured to reduce the pressure gradient between the first pressure and the second pressure in order to release the multitude of filament blanks 1171 from the suction plate.

[0089] In some embodiments, the device includes a cutting unit 1200 configured to fix a filament fabric 1000 and / or align filament blanks 1171 while the filament fabric 1000 is being cut. In some embodiments, the device is configured to align the filament fabric 1000 uniformly within the cutting unit 1200.

[0090] The Fig. show drawings of a device according to some embodiments. Fig. This is a top view of a cutting unit 1200. Fig. is a cross-section of the cutting unit 1200 along the in Fig. Cross-section marked by the dashed line BB. Fig. is a cross-section of the cutting unit 1200 along the in Fig. Cross-section marked by the dashed line CC. Fig. is a cross-section of the cutting unit 1200 along the in Fig. The cross-section is marked by the dashed line DD. In some embodiments, the cutting unit 1200 comprises a suction plate (cutting plate) 1210 with a non-planar surface shaped to produce several molded parts (cutting plate) 1240 separated from one another by raised areas (top of suction plate 1270). In some embodiments, the raised areas (top of suction plate 1270) have one or more guide grooves (cutting plate 1272) formed in the raised area (top of suction plate 1275) of the raised area (cutting plate 1270). The bottom of such guide grooves lies in a cutting-stop plane (cutting plate 1250).

[0091] In some embodiments (not shown), the cutting unit 1200 has a substantially flat surface. In some embodiments, the cutting unit 1200 is structured according to the specified array layout. In some embodiments, the device includes an adhesive to align the filament fabric 1000 in the cutting unit 1200. In some embodiments, the adhesive is a liquid dispenser that applies a liquid to the surface of the cutting unit 1200. In some embodiments, the adhesive is an electrostatic charging device that electrically charges the filament fabric 1000 and / or the cutting unit 1200.This allows, among other things, an electrical potential difference to be established between the filament fabric 1000 and the cutting unit 1200, creating an attractive electric field that causes the filament fabric 1000 to adhere electrostatically to the cutting unit 1200. In some embodiments, the cutting unit 1200 utilizes the Bernoulli effect to fix the filament fabric 1000 within the cutting unit 1200.

[0092] The device is configured to accommodate the 1000 filament fabric to be cut, for example as in the Fig. shown. In particular, the upper suction plate (cutout) 1275 of the raised areas upper suction plate (cutout) 1270 is configured so that it can accommodate the warp threads 1071 (not in the Fig. (as shown). The cutting unit 1200 can, for example, be configured to hold the warp threads 1071 of the wide-mesh sections filament fabric 1070 of the filament fabric 1000 in the guide grooves suction plate (cutting) 1272, which are formed in the raised area suction plate (cutting) 1270 of the suction plate (cutting) 1210 of the cutting unit 1200. In some embodiments, the cutting unit 1200 has one or more through holes suction plate (cutting) 1271 extending from the rear of the cutting unit 1200 to the top of the raised area suction plate (cutting) 1270. In some embodiments, the device is configured to exert a differential pressure on the cutting unit 1200, wherein the pressure on the underside facing away from the suction plate (cutting) 1220 is less than the pressure on the top side of the suction plate (cutting) 1210, i.e., on its top side, suction plate (cutting) 1230.This can, among other things, lead to filaments fraying (not shown in the illustrations). The filament blanks 1171 arranged on the raised area of ​​the upper surface of the suction plate (cut) 1275 in the cutting unit 1200 are fixed above the openings to the through holes of the suction plate (cut) 1271 in the guide grooves of the suction plate (cut) 1272, which are connected to the low pressure on the back.

[0093] In some embodiments, the device includes a cutting unit (not shown) for cutting the filament fabric 1000. In some embodiments, the cutting unit 1200 is configured to cut the warp thread 1071 of the dense sections of filament fabric 1020 of the filament fabric 1000 to obtain a plurality of filament blanks 1171, which are substantially arranged in a row and separated from the weft thread 1021. In some embodiments, the cutting unit 1200 includes a blade configured for the cutting operation of the filament fabric 1000 in the molded part suction plate (blank) 1240, for example as shown in Fig. as indicated by arrows 1251. Other cutting means, such as lasers, are also conceivable. In some embodiments, the cutting unit 1200 is configured such that the movement of the blade relative to the cutting unit 1200 is essentially stopped at the cutting-stop plane suction plate (cutting plate) 1250 before the blade touches the surface of the cutting unit 1200. This can, among other things, allow the filament fabric 1000 arranged in the cutting unit 1200 to be cut without the blade becoming unnecessarily dull.

[0094] In some embodiments, the cutting unit 1200 is configured to make multiple cuts of the filament fabric 1000 in a space between two weft threads 1021.

[0095] In some embodiments, the device is configured such that the dense sections of filament fabric 1020 are removed from the cut filament fabric 1000, leaving an arrangement (filament blanks) 1100 in the cutting unit 1200. Fig. Figure 1 schematically shows such an arrangement (filament blanks) 1100 according to some embodiments. In some embodiments, the arrangement (filament blanks) 1100 is arranged according to the specified layout. For example, the device can be configured such that filament blanks 1171 remain on raised areas of the suction plate (blank) 1270 of the non-planar surface of the cutting unit 1200. The filament blanks 1171 (are in the Fig. (not shown). In some embodiments, the device is configured to hold filament blanks 1171, cut from the filament fabric 1000, on the raised areas of the suction plate (blank) 1270 of the cutting unit 1200. This can, among other things, result in the warp threads 1071 being held in the guide grooves of the suction plate (blank) 1272, while filament blanks 1171 of the dense sections of filament fabric 1020 of the filament fabric 1000, which were cut in the molded suction plate (blank) 1240 of the cutting unit 1200, are removed from the molded suction plate (blank) 1240 of the cutting unit 1200.

[0096] In some embodiments, the device is configured to receive the plurality of filament blanks 1171 from the cutting unit 1200. The following refers to the Fig. referenced, which represent a device according to some embodiments. Fig. shows a top view of an overhead transport unit 1300. Fig. shows a cross-section along the in Fig. The cross-section of the overhead transport unit 1300, marked by the dashed line BB, is shown. Fig. shows a cross-section along the in Fig. Cross-section of the overhead transport unit 1300, marked by the dashed line CC.

[0097] In some embodiments, the device is configured to position the plurality of filament blanks 1171 in the overhead transport unit 1300. In some embodiments, the overhead transport unit 1300 comprises a suction plate (overhead transport) 1310 with an arrangement of guide grooves (overhead transport) 1372. In some embodiments, the guide grooves (overhead transport) 1372 are formed in a substantially flat plateau 1340 on a side facing the filament blanks 1171, which serves to receive the filament blanks 1171. The guide grooves (overhead transport) 1372 may be provided with several through holes (overhead transport) 1371. In some embodiments, the through holes (overhead transport) 1371 widen towards the underside of the intake plate (overhead transport) 1320 of the intake plate (overhead transport) 1310, which is opposite the top of the intake plate (overhead transport) 1330.In some embodiments, the device is configured such that a negative pressure gradient is created between the pressure on the upper side of the intake plate (overhead transport) 1330 of the intake plate (overhead transport) 1310, which faces the filament blanks 1171, and the pressure on the lower side of the intake plate (overhead transport) 1320 of the intake plate (overhead transport) 1310. In some embodiments, the device is configured such that the pressure on the lower side of the intake plate (overhead transport) 1320, facing away from the filament blanks, is lower than a reference pressure, and the pressure on the upper side of the intake plate (overhead transport) 1330, facing towards the filament blanks, is higher than the reference pressure. The reference pressure can, for example, be atmospheric pressure. Among other things, this can facilitate the removal of the filaments from the device.In some embodiments, the device is configured to control the position of the overhead transport unit 1300 relative to the filament blanks 1171 held in the cutting unit 1200, such that the filament blanks 1171 are fixed in the guide grooves (overhead transport) 1372 by suction against the suction plate (overhead transport) 1310.

[0098] In some embodiments (not shown), the intake plate is electrostatically charged. This allows the charge of the intake plate to be controlled so that filament blanks 1171 are held and / or filament is released from the intake plate (overhead transport) 1310. In some embodiments, as shown above in a Fig. As described in the example shown, the device is configured to align the overhead transport unit 1300 above the substrate 210.

[0099] In some embodiments, the exemplary device is configured to align the plurality of filament blanks 1171 in a predetermined direction. The following refers to the Fig. referenced, which represent a device according to some embodiments. Fig. shows a top view of an angle adjustment unit 1400. Fig. shows a cross-section along the in Fig. The cross-section of the angle adjustment unit 1400, marked by the dashed line BB, is shown. Fig. shows a cross-section along the in Fig. Cross-section of the angle adjustment unit 1400, marked by the dashed line CC.

[0100] In some embodiments, the device is configured to align the plurality of filament blanks 1171 in the angle adjustment unit 1400 in a predetermined direction. In some embodiments, this predetermined direction is perpendicular to a substantially flat underside of the angle adjustment unit 1400 (intake plate (angle adjustment) 1420). In some embodiments, such as in the Fig. As shown, the angle adjustment unit 1400 comprises an intake plate (angle adjustment) 1410, which serves for angle-dependent alignment. In particular, the intake plate (angle adjustment) 1410 of the angle adjustment unit 1400 has a substantially flat underside, intake plate (angle adjustment) 1420.

[0101] In some embodiments, the intake plate (angle adjustment) 1410 has several guide forms (intake plate (angle adjustment) 1472) which are formed in the flat underside (intake plate (angle adjustment) 1420) of the intake plate (angle adjustment) 1410 and are assigned to the respective through-holes (intake plate (angle adjustment) 1471). In some embodiments, the base of the guide forms (intake plate (angle adjustment) 1472) slopes towards the respective through-hole (intake plate (angle adjustment) 1471). In some embodiments, the base of the guide forms (intake plate (angle adjustment) 1472) is designed as a step that slopes towards the through-hole (intake plate (angle adjustment) 1471. In some embodiments, the slope is constant.In some embodiments, the base of the guide form intake plate (angle adjustment) 1472 has a convex curvature with increasing steepness towards the through-hole intake plate (angle adjustment) 1471. This can, among other things, cause a filament blank 1171 received in a guide form intake plate (angle adjustment) 1472 to align itself with the inclined base of the guide form intake plate (angle adjustment) 1472, allowing a free end of the filament blank 1171a to slide into the upper part of the through-hole intake plate (angle adjustment) 1471.

[0102] In some embodiments, the device's control is configured such that a lower pressure is applied to the underside of the suction plate (angle adjustment) 1420 of the angle adjustment unit 1400 than to the upper side of the suction plate (angle adjustment) 1430 of the angle adjustment unit 1400. This can, among other things, cause the filament blank 1171 arranged in the guide form suction plate (angle adjustment) 1472 to be drawn in the direction of the through-hole of the suction plate (angle adjustment) 1471 and to align itself along its axis. This allows the filament blanks 1171 to be aligned vertically, which in some embodiments is essentially perpendicular to the surface of the suction plate (angle adjustment) 1410 of the angle adjustment unit 1400.

[0103] In some embodiments, the exemplary device is configured to insert the plurality of filament blanks 1171 into a vertical adjustment unit 1500. The following refers to the Fig. referenced, which represent a device according to some embodiments. Fig. shows a top view of a 1500 vertical adjustment unit. Fig. shows a cross-section along the in Fig. The cross-section of the vertical adjustment unit 1500, marked by the dashed line BB, is shown. Fig. shows a cross-section along the in Fig. Cross-section of the vertical adjustment unit 1500 marked by the dashed line CC.

[0104] In some embodiments, the device is designed according to the Fig. configured to transfer the filament blanks 1171 located in the vertical adjustment unit 1500 to an insertion unit 1600, where they are aligned. As described in the Fig. As shown, the vertical adjustment unit 1500 in some embodiments comprises an intake plate (vertical adjustment) 1510 with a flat surface (which is in Fig. (shown with dashed lines). In some embodiments, the intake plate (vertical adjustment) 1510 has several through holes (intake plate (vertical adjustment) 1571).

[0105] In some embodiments, the device's control system is configured such that a lower pressure is exerted on the underside of the intake plate (vertical adjustment) 1520 of the intake plate (vertical adjustment) 1510 of the vertical adjustment unit 1500 than on the upper side of the intake plate (vertical adjustment) 1530 of the intake plate (vertical adjustment) 1510. This can, among other things, result in a filament blank 1171 arranged in the through-hole of the intake plate (vertical adjustment) 1571 being held in the through-hole of the intake plate (vertical adjustment) 1571. Thus, several filament blanks 1171 located in several corresponding through-holes of the intake plate (vertical adjustment) 1571 can be inserted into an insertion unit 1600.

[0106] In some embodiments, the device is configured to control the position of the vertical adjustment unit 1500 relative to the insertion unit 1600 in order to align the plurality of filament blanks 1171 with selected target through-holes of the insertion unit 1600. In some embodiments, the device is configured to transfer the plurality of filament blanks 1171 into the insertion unit 1600, with a remote end of the plurality of filament blanks 1171 being inserted into a corresponding target through-hole of the insertion unit 1600.

[0107] In some embodiments, the device is configured to reduce the pressure gradient between the low pressure on the bottom of the intake plate (vertical adjustment) 1520 of the intake plate (vertical adjustment) 1510 and the pressure on the top of the intake plate (vertical adjustment) 1530 of the intake plate (vertical adjustment) 1510. In some embodiments, the device is configured to reverse the pressure gradient in order to release the plurality of trimmed filament blanks 271a, 271b, 271c from the intake plate (vertical adjustment) 1510.

[0108] In some embodiments, the exemplary device is configured to position several filament blanks 1171 relative to a substrate 210. The following refers to the Fig. referenced, which represent a device according to some embodiments. Fig. shows a top view of an insertion unit 1600. Fig. shows a cross-section of the insertion unit 1600 along the in Fig. Section marked by the dashed line BB. Fig. shows a cross-section of the insertion unit 1600 along the in Fig. Section marked by the dashed line CC.

[0109] In some embodiments, the device is designed according to the Fig. configured to position the trimmed filament blanks 271a, 271b, 271c located in the insertion unit 1600 relative to a substrate 210. In some embodiments, the insertion unit 1600 comprises an intake plate (insertion unit) 1610 with a substantially flat surface (intake plate (insertion unit) 1640). In some embodiments, the intake plate (insertion unit) 1610 of the insertion unit 1600 has several through-holes (intake plate (insertion unit) 1671).

[0110] In some embodiments, the device's control system is configured such that a lower pressure is exerted on the underside of the suction plate (insertion unit) 1620 than on the upper side of the suction plate (insertion unit) 1630. This can, among other things, result in a trimmed filament blank 271a, 271b, 271c arranged in the through-hole of the suction plate (insertion unit) 1671 being held in the through-hole. Thus, several trimmed filament blanks 271a, 271b, 271c, held in a corresponding number of through-holes of the suction plate (insertion unit) 1671, can be aligned relative to a substrate 210.

[0111] In some embodiments, the device is configured to control the position of the insertion unit 1600 relative to the substrate 210 in order to align the filament blanks 1171 at an arrangement of target positions on the substrate 210. In some embodiments, the device is configured to place the filament blanks 1171 on the substrate 210, with a free end of the filament blanks contacting the substrate 210 at the arrangement of target positions. At least one effect can be that a remote end of the filament blanks is fixed in an adhesive dot 262a, 262b, 262c on the substrate 210.

[0112] In some embodiments, the device is configured to reduce the pressure gradient between the low pressure on the underside of the suction plate (insertion unit) 1620 of the suction plate (insertion unit) 1610 and the pressure on the upper side of the suction plate (insertion unit) 1630 of the suction plate (insertion unit) 1610. In some embodiments, the device is configured to reverse the pressure gradient in order to release the plurality of trimmed filament blanks 271a, 271b, 271c from the suction plate (insertion unit) 1610.

[0113] In one embodiment of the invention, a method for providing a support structure 270 in an electroactive device is disclosed. In particular, in some embodiments of the invention, a method for producing several trimmed filament blanks 271a, 271b, 271c for attaching them to the substrate 210 is disclosed. First, embodiments of the method are described in general terms.

[0114] The method comprises providing a filament fabric 1000. In some embodiments, the method comprises weaving the filament fabric 1000. In some embodiments, the method comprises forming the filament fabric 1000, which consists of weft threads 1021 and several warp threads 1071. In some embodiments, the filament fabric 1000 consists of yarn, for example, glass fiber. In some embodiments, the filament fabric 1000 has a wide mesh. In some embodiments, the spacing between successive weft threads 1021 is large. At least one effect can be that a section of the warp thread 1071 between the successive weft threads 1021 is sufficiently long to provide at least one load-bearing element from the warp thread 1071. In some embodiments, the filament fabric 1000 is provided as a square set.In some embodiments, the method includes controlling the shaping of the filament fabric 1000 according to a predetermined array layout. In some embodiments, the filament fabric 1000 is trimmed to achieve a conformity of a layout comprising the filament blanks 1171 with the predetermined array layout. At least one effect can be that the filament blanks 1171 are aligned with the predetermined array layout after the weft thread 1021 has been cut from the filament fabric 1000.

[0115] In some embodiments, the method comprises separating the weft thread 1021 from the filament fabric 1000. In some embodiments, the separation comprises cutting the filament fabric 1000. In some embodiments, separating the weft thread 1021 from the filament fabric 1000 comprises cutting the filament fabric 1000 at least on one side of a weft thread 1021. At least one consequence may be that several filament blanks 1171 are obtained. Some embodiments comprise cutting the warp threads 1071 of the filament fabric 1000 near a weft thread 1021. At least one consequence may be that the several filament blanks 1171 are obtained from the warp threads 1071. In some embodiments, the several filament blanks 1171 correspond to the several future load-bearing elements. In some embodiments, the method includes cutting the multiple filament blanks 1171 into several future load-bearing elements.In some embodiments, the warp thread 1071 has a substantially circular cross-section, so that the filament blanks 1171 obtained from the warp thread 1071, and thus also the future load-bearing elements obtained from the filament blanks 1171, are cylindrical. In some embodiments, these load-bearing elements are described in the following sections, referred to above. Fig. The described process steps use trimmed filament blanks 272a, 272b, 272c. In some embodiments, the trimmed filament blanks 271a, 271b, 271c comprise the load-bearing elements.

[0116] In some embodiments, the method comprises drawing filament blanks 1171 into a device. In some embodiments, where the device has a suction plate with a row of holes, the method comprises generating a negative pressure gradient between a first pressure on the upper side of the suction plate facing the filament blanks 1171 and a second pressure on the lower side of the suction plate, thereby drawing the filament blanks 1171 to a corresponding row of holes in the suction plate. In some embodiments, the method comprises aligning the filament blanks 1171 in a predetermined direction relative to the suction plate. In some embodiments, where the surface of the suction plate is substantially planar, the predetermined direction relative to the suction plate is perpendicular to its surface.In some embodiments (not shown), aligning the filament blanks 1171 includes electrostatically charging the suction plate.

[0117] In some embodiments, where the row of holes in the suction plate extends to a surface on the opposite side of the suction plate, the method includes controlling a position of the device relative to the filament blanks 1171, so that the free ends of the filament blanks rest in the holes when sucked through the suction plate.

[0118] In some embodiments, the method comprises placing the device onto a substrate 210. In some embodiments, placing the device onto the substrate 210 comprises controlling its position relative to the substrate 210 in order to align the plurality of filament blanks 1171 with an arrangement of target positions on the substrate 210. In some embodiments, placing the device onto the substrate 210 comprises preparing to attach the plurality of filament blanks 1171 to the substrate 210, wherein a free end of the plurality of filament blanks 1171 contacts the substrate 210 at the arrangement of target positions. In some embodiments, the method comprises increasing the vacuum to release the plurality of filament blanks 1171 from the suction plate.

[0119] Although the method described above provides for the use of only one device, in some embodiments several devices are used sequentially, each device being configured differently to perform an associated operation or step of the method described herein. In some embodiments, the method thus includes one or more transfers of the filament blanks 1171 from one device to another. In some embodiments, the method includes moving a first device containing the filament blanks 1171 with opposite sides to a second device to receive the filament blanks 1171 from the first device. In some embodiments, the method includes increasing a first pressure on the opposite side of the first device relative to a second pressure on the opposite side of the second device.This can, among other things, lead to the filament blanks 1171 being detached from the first device and pulled to the second device to be held there. In some embodiments, the method includes aligning the first and second devices such that a plurality of receptacles formed on a nearby side surface of the first device face a plurality of associated receptacles formed on a nearby side surface of the second device.

[0120] An exemplary embodiment of a method for manufacturing an electroactive cell will now be presented using the following example: Fig. Disclosed are figures showing a flowchart illustrating the steps of method 900 in an embodiment according to one aspect of the invention. Method 900 produces several trimmed filament blanks 271a, 271b, 271c arranged in an array. This allows, for example, the trimmed filament blanks 271a, 271b, 271c to be applied to the substrate 210 described above. In some embodiments, the trimmed filament blanks 271a, 271b, 271c are prepared for placement on the substrate 210 in a single, coordinated process step. This can, among other things, result in the trimmed filament blanks 271a, 271b, 271c being ordered and placed on the substrate 210 essentially simultaneously.

[0121] An exemplary method for providing trimmed filament sections 271a, 271b, 271c for the fabrication of an electroactive cell comprises the production of a filament fabric 1000. One advantage is that the filament fabric 1000 can be formed according to a predetermined array layout. In some embodiments, the filament fabric 1000 consists of weft threads 1021 and several warp threads 1071.

[0122] In a first step, molten glass is provided in a container in S910. In some embodiments, the container includes several nozzles. In other embodiments, the container includes one or more nozzle carriers in which the nozzles are formed. In the exemplary method according to Fig. At least two process lines are used, with molten glass being provided in a first container for the extraction of yarn filaments in S910a and molten glass being provided in a second container for the extraction of warp thread filaments in S910b.

[0123] In the S915, a filament is extracted from a nozzle in the repository. In some embodiments, multiple filaments are extracted simultaneously from several nozzles, which are arranged, for example, in the rod. This allows, for instance, the production of glass fibers from molten glass. In other embodiments, the filaments are manufactured from polymers, for example, by extrusion. Polymer raw materials can be pure or contain, for example, oxides, ceramic compounds, and / or composite materials. Examples include fluoropolymers, polyacrylate, polycarbonate, polyamide, polyhydroxyalkanoate, polybutylene adipate terephthalate, polyethylene, polyurethane, polypropylene, polybutylene succinate, and epoxy resins, which may contain, for example, oxides or ceramic compounds.One effect of the polymer coating can be that the filament uses a polymer that exhibits negligible wear under UV light, is stable over a wide temperature range (e.g., from -40 °C to +200 °C), and / or has a service life of more than 20 years. In some embodiments, the polymer filament material is a composite containing lignin and / or nanocellulose and / or other stiffening or hydrophobic materials to increase stiffness and / or hydrophobicity.

[0124] In the Fig. In the exemplary processes shown, at least two process lines are used to extract or extrude a weft thread 1021 from a die in step S915a and several warp threads 1071 from a die bridge in step S915b. In some embodiments, steps S915a and S915b, i.e., the extraction of the weft thread 1021 and the warp threads 1071, are carried out simultaneously.

[0125] After removal, the weft thread 1021 is sized in step S920a. After removal, the multitude of warp threads 1071 are sized in step S920b. In some embodiments, steps S920a and S920b, the sizing of the weft thread 1021 and the sizing of the multitude of warp threads 1071, are performed simultaneously.

[0126] In step S925a, the weft thread 1021 is then wound onto a spool. In step S925b, the warp threads 1071 are wound onto corresponding spools. In some embodiments, steps S925a and S925b – the winding of the weft thread 1021 and the warp threads 1071, respectively – are performed simultaneously.

[0127] In step S930a, a weft bobbin holder is loaded with the weft thread bobbin. In step S930b, several warp bobbin holders are loaded with the warp thread bobbins. In some embodiments, steps S930a and S930b – loading the weft bobbin holder and loading the warp thread bobbins – are performed simultaneously.

[0128] Then, at S941, the weft thread 1021 is inserted into the loom, while at S942 the warp beam is inserted into the loom.

[0129] In the S950, the loom is used to weave the warp and weft into a filament fabric 1000. In some embodiments, weaving the filament fabric 1000 includes controlling the loom so that the filament fabric 1000 is woven according to the predetermined layout pattern. In some embodiments, the layout pattern and / or the filament fabric 1000 has some or all of the dimensions mentioned above, e.g., the width and length of the filament fabric 1000, as well as the distance between adjacent parallel warp threads 1071 and weft threads 1021. In some embodiments, the filament fabric 1000 is shaped to achieve conformity of the layout pattern with the predetermined layout pattern.

[0130] Regarding the Fig. Some embodiments of the method include aligning the filament fabric 1000 in a cutting unit 1200. In some embodiments, the cutting unit 1200 is essentially planar. The filament fabric 1000 can be held firmly against the suction plate (cutting plate) 1210 of the cutting unit 1200. In some embodiments, the pressure on the upper suction plate (cutting plate) 1230 of the cutting unit 1210 is maintained at a higher pressure than the pressure on the lower suction plate (cutting plate) 1220 of the cutting unit 1210. A pressure difference can be transmitted via the through holes of the suction plate (cutting plate) 1271. This can, among other things, lead to the warp threads 1071 being sucked into the openings of the through holes in the guide grooves of the suction plate (cutout) 1272 of the raised areas of the top of the suction plate (cutout) 1275 of the suction plate (cutout) 1210.

[0131] In S955, the filament fabric 1000 is cut, in particular the warp threads 1071 being cut to obtain a plurality of filament blanks 1171, which are essentially arranged in a row and separated from the weft thread 1021. In some embodiments, the cutting includes a knife that enables separation operations in the molded part suction plate (blank) 1240 of the blanking unit 1200, for example as in Fig. as indicated by arrows 1251. In some embodiments, separating the filament blanks 1171 from the filament fabric 1000 comprises cutting the filament fabric 1000 at least on one side of the dense sections filament fabric 1020 of the filament fabric 1000. In some embodiments, cutting the filament fabric 1000 comprises multiple cuts in the space between two adjacent dense sections filament fabric 1020. In other embodiments, cutting the filament fabric 1000 comprises cuts on both sides of the dense sections filament fabric 1020. This can, among other things, result in multiple filament blanks 1171 being produced according to the specified arrangement when separating the dense sections filament fabric 1020 from the filament fabric 1000.

[0132] In S960, the dense sections of filament fabric 1020 of the filament fabric 1000, which includes the weft thread 1021, are removed from the cut filament fabric 1000, leaving an arrangement (filament blanks) 1100. Fig. Figure 1100 shows the arrangement (filament blanks) according to some embodiments. In some embodiments, as in Fig. As shown, the filament blanks 1171 can be pressed into the guide grooves of the suction plate (blank) 1272 in the guide channel of the cutting-stop plane of the suction plate (blank) 1250 of the suction plate (blank) 1210.

[0133] The Fig. illustrate the use of the in the Fig. The device shown, according to some embodiments. With regard to the Fig. Some embodiments of the exemplary method include transferring filament blanks 1171 of the warp threads 1071 from the cutting unit 1200 to the overhead transport unit 1300.

[0134] As above with reference to the Fig. As described, the overhead transport unit 1300 in some embodiments comprises an intake plate (overhead transport) 1310 with an arrangement of through holes (overhead transport) 1371. In some embodiments, the through holes (overhead transport) 1371 on the underside intake plate (overhead transport) 1320 of the intake plate (overhead transport) 1310 widen towards the upper side of the intake plate (overhead transport) 1330 of the intake plate (overhead transport) 1310, which is opposite the plurality of filament blanks 1171. In some embodiments, the method comprises generating a negative pressure gradient between a pressure on the top of the intake plate (overhead transport) 1330 of the intake plate (overhead transport) 1310 and a pressure on the bottom of the intake plate (overhead transport) 1320 of the intake plate (overhead transport) 1310.In some embodiments, the method comprises generating the negative pressure gradient between the pressure on the top of the intake plate (overhead transport) 1330 of the intake plate (overhead transport) 1310 of the overhead transport unit 1300 and the pressure on the bottom of the intake plate (overhead transport) 1320 of the intake plate (overhead transport) 1310 of the overhead transport unit 1300, while simultaneously reducing the pressure difference between the pressure on the top of the intake plate (cutting) 1230 of the intake plate (cutting) 1210 of the cutting unit 1200 and the pressure on the bottom of the intake plate (cutting) 1220 of the intake plate (cutting) 1210 of the cutting unit 1200. In some embodiments, the pressure on the top of the suction plate (cutting) 1230 of the suction plate (cutting) 1210 of the cutting unit 1200 and the pressure on the bottom of the suction plate (cutting) 1220 of the suction plate (cutting) 1210 of the cutting unit 1200 are reduced.The pressure on the top of the suction plate (overhead transport) 1330 of the suction plate (overhead transport) 1310 of the overhead transport unit 1300 essentially corresponds to the pressure on this side. This causes at least some, if not all, of the filament blanks 1171 to be detached from the suction plate (blank) 1210 of the blanking unit 1200 and, as shown in . Fig. The filament is drawn to a corresponding opening in the through-holes (overhead transport unit) in the intake plate (overhead transport) 1310, indicated by an arrow 1751 [symbolizing the suction of filament blanks 1171 from the intake plate (blank) 1210 to the intake plate (overhead transport) 1310]. In some embodiments of the method, the position of the overhead transport unit 1300 relative to the filament blanks 1171 is controlled such that their free ends, after being drawn to the intake plate, lie in the guide grooves (overhead transport) 1372. Fig. The distance between the overhead transport unit 1300 and the cutting unit 1200 is shown enlarged to better illustrate the process steps described above. The process can include controlling the distance between the underside of the suction plate (overhead transport) 1320 of the suction plate (overhead transport) 1310 of the overhead transport unit 1300 and the underside of the suction plate (cutting) 1220 of the suction plate (cutting) 1210 of the cutting unit 1200, as shown, for example, in Fig. shown so that the suction plate (overhead transport) 1310 of the overhead transport unit 1300 and the suction plate (cutting) 1210 of the cutting unit 1200 interlock, as for example in Fig. This is illustrated. Among other things, this reduces material loss during the transport of the filament blanks 1171 from the cutting unit 1200 to the overhead transport unit 1300.

[0135] The S965 receives the numerous filament blanks 1171. In some embodiments, the filament blanks 1171 are transferred from the cutting unit 1200 to the overhead transport unit 1300, as for example in Fig. The filament blanks 1171 adhere to the suction plate (overhead transport) 1310 of the overhead transport unit 1300 due to the suction pressure generated by the negative pressure in the through-holes (overhead transport) 1371. The overhead transport unit 1300 is, as shown in Fig. The filament blanks 1171 are shown and marked by arrows 1751 [symbolizing the suction of the filament blanks 1171 from the suction plate (blank) 1210 to the suction plate (overhead transport) 1310], moving away from the cutting unit 1200. In some embodiments (not shown), the cutting unit 1200 also serves as the overhead transport unit 1300. That is, for the next process step, which is described in the diagram below, the filament blanks 1171 remain in their position in the cutting unit 1200. By remaining in the overhead transport unit 1300, the filament blanks 1171 are kept ready for the next step.

[0136] The Fig. illustrate the use of the in the Fig. The device shown, according to some embodiments. With regard to the Fig. Some embodiments of the exemplary method include the transfer of filament blanks 1171 from the overhead transport unit 1300 to the angle adjustment unit 1400.

[0137] In some embodiments, as above with reference to the Fig. As described, the angle adjustment unit 1400 comprises an intake plate (angle adjustment) 1410 with an arrangement of through-holes intake plate (angle adjustment) 1471. In some embodiments, the through-holes intake plate (angle adjustment) 1471 widen towards the underside intake plate (angle adjustment) 1420 of the intake plate (angle adjustment) 1410, which faces the upper side intake plate (angle adjustment) 1430 of the intake plate (angle adjustment) 1410, which faces the plurality of filament blanks 1171. In some embodiments, the method includes generating a negative pressure gradient between the pressure on the upper side intake plate (angle adjustment) 1430 and the pressure on the underside intake plate (angle adjustment) 1420.In some embodiments, the method comprises, while the negative pressure gradient between the pressure on the top of the intake plate (angle adjustment) 1430 of the angle adjustment unit 1400 and the pressure on the bottom of the intake plate (angle adjustment) 1420 of the angle adjustment unit 1400 is built up, simultaneously reducing the pressure difference between the pressure on the top of the intake plate (overhead transport) 1330 of the intake plate (overhead transport) 1310 of the overhead transport unit 1300 and the pressure on the bottom of the intake plate (overhead transport) 1320 of the intake plate (overhead transport) 1310 of the overhead transport unit 1300. In some embodiments, the pressure on the top of the suction plate (overhead transport) 1330 and the pressure on the bottom of the suction plate (overhead transport) 1320 of the suction plate (overhead transport) 1310 of the overhead transport unit 1300 are adjusted to each other.The filament blanks 1171 are released such that this pressure corresponds to or is greater than that of the suction plate (angle adjustment) 1430 on the upper side of the suction plate (angle adjustment) 1410. This can, among other things, lead to the filament blanks 1171 being moved in the direction of arrow 1851. Fig. to a corresponding through-hole suction plate (angle adjustment) 1471 in the suction plate (angle adjustment) 1410 of the angle adjustment unit 1400. In some embodiments, a filament blank 1171 is drawn to a through-hole suction plate (angle adjustment) 1471. This causes the filament blanks 1171 to detach from the guide grooves (overhead transport) 1372 of the suction plate (overhead transport) 1310 of the adjustment unit and slide into the corresponding guide forms of the suction plate (angle adjustment) 1472 of the suction plate (angle adjustment) 1410, as shown in Fig. illustrated. Some embodiments of the method further include controlling the position of the angle adjustment unit 1400 relative to the plurality of filament blanks 1171, as for example in Fig. and Fig. shown, so that an end wall guide grooves (overhead transport) 1372a of the guide grooves (overhead transport) 1372 of the overhead transport unit 1300 comes into contact with a free end filament blank 1171a of the multitude of filament blanks 1171.

[0138] In the S970, the filament blanks 1171 are placed in the angle adjustment unit 1400. In some embodiments, the filament blanks 1171 are transferred from the overhead transport unit 1300 to the angle adjustment unit 1400. In other embodiments, the overhead transport unit 1300 also serves as the angle adjustment unit 1400. This means that for the next process step (see below), the filament blanks 1171 arranged in the overhead transport unit 1300 remain in place and are thus held in the angle adjustment unit 1400.

[0139] For example, in S975, the filament blanks 1171 are positioned in the angle adjustment unit 1400. In some embodiments, as shown above with reference to the Fig. As described, the upper surface of the suction plate (angle adjustment) 1430 of the angle adjustment unit 1400 is essentially flat, and the predetermined direction with respect to the suction plate (angle adjustment) 1410 is perpendicular to its surface. In some embodiments, the method after suction against the suction plate (angle adjustment) 1410 of the angle adjustment unit 1400 includes controlling a lateral movement of the overhead transport unit 1300 relative to the angle adjustment unit 1400.

[0140] In the S980, the numerous filament blanks 1171 are lifted in the angle adjustment unit 1400. In some embodiments (not shown), aligning the filament blanks 1171 includes electrostatically charging the suction plate. In some embodiments, the method includes controlling a vertical movement of the overhead transport unit 1300 relative to the angle adjustment unit 1400. As in Fig. As shown, for example, a combined relative movement of the overhead transport unit 1300 relative to the angle adjustment unit 1400 causes in some embodiments - the direction of which in Fig. as indicated by an arrow 1852 - due to the contact of the end wall guide grooves (overhead transport) 1372a of the guide grooves (overhead transport) 1372 with the free end filament blank 1171a of the filament blank 1171, the lifting of the respective filament blank 1171. This brings the filament blank 1171 into an upright position relative to the substantially flat surface suction plate (angle adjustment) 1410 of the angle adjustment unit 1400, and an opposite end filament blank 1171b of the respective filament blank 1171 touches the bottom of the upper part of the through-hole suction plate (angle adjustment) 1471 in the respective guide form suction plate (angle adjustment) 1472 of the suction plate (angle adjustment) 1410 of the Angle adjustment unit 1400.At least one effect can be that the filament blanks 1171 assume an upright position relative to the substantially flat surface of the suction plate (angle adjustment) 1410 of the angle adjustment unit 1400. At least one effect can be that the waste generated during the transport of the filament blanks 1171 from the overhead transport unit 1300 to the angle adjustment unit 1400 is reduced. At least one effect can be that the filament blanks 1171 are oriented upright in a predetermined arrangement that corresponds to the arrangement of the through-holes of the suction plate (angle adjustment) 1471 in the suction plate (angle adjustment) 1410 of the angle adjustment unit 1400.

[0141] The Fig. illustrate the use of the in the Fig. The device shown, according to some embodiments. With regard to the Fig. Some embodiments of the exemplary method include transferring filament blanks 1171 from the warp threads 1071 from the angle adjustment unit 1400 to the vertical adjustment unit 1500.

[0142] Some embodiments of the exemplary method involve aligning the filament blanks 1171 in a predetermined direction relative to the suction plate. In some embodiments, as shown above with reference to the Fig. As described, the vertical adjustment unit 1500 comprises an intake plate (vertical adjustment) 1510 with an arrangement of through-holes intake plate (vertical adjustment) 1571. In some embodiments, the through-holes intake plate (vertical adjustment) 1571 on the underside intake plate (vertical adjustment) 1520 of the intake plate (vertical adjustment) 1510 of the vertical adjustment unit 1500 widen towards the top side intake plate (vertical adjustment) 1530 of the intake plate (vertical adjustment) 1510, which is opposite the filament blanks 1171. In some embodiments, the method comprises generating a negative pressure gradient between a pressure on the top of the intake plate (vertical adjustment) 1530 of the intake plate (vertical adjustment) 1510 of the vertical adjustment unit 1500 and a pressure on the bottom of the intake plate (vertical adjustment) 1520 of the same.This can lead, among other things, to at least some, if not all, filament blanks 1171 being drawn into the intake plate (vertical adjustment) 1571 of the vertical adjustment unit 1500 through one of the through-holes. In some embodiments, one filament blank 1171 is drawn into each through-hole intake plate (vertical adjustment) 1571. Some embodiments of the method further include controlling the position of the vertical adjustment unit 1500 relative to the filament blanks 1171, so that the free ends of the filament blanks 1171a slide into the through holes of the suction plate (vertical adjustment) 1571 by suction against the suction plate (vertical adjustment) 1510 of the vertical adjustment unit 1500.In some embodiments, the method includes moving the vertical adjustment unit 1500 relative to the angular adjustment unit 1400 towards each other in a direction, as shown in . Fig. indicated by an arrow in 1951.

[0143] In some embodiments, the filament blanks 1171 are transferred from the angular adjustment unit 1400 to the vertical adjustment unit 1500. In some embodiments, the angular adjustment unit 1400 also serves as the vertical adjustment unit 1500; that is, for the next process step, as described below, the filament blanks 1171 arranged in the angular adjustment unit 1400 remain in place, thus keeping the filament blanks 1171 aligned in the vertical adjustment unit 1500.

[0144] The Fig. illustrate the use of the in the Fig. The device shown, according to some embodiments. With regard to the Fig. Some embodiments of the exemplary method include preparing the plurality of filament blanks 1171 for attachment to the substrate 210.

[0145] In some embodiments, the method includes inserting the filament blanks 1171 into the insertion unit 1600. In some embodiments, as shown above with reference to the Fig. As described, the vertical adjustment unit 1500 comprises an intake plate (vertical adjustment) 1510 with an arrangement of through holes intake plate (vertical adjustment) 1571. In some embodiments, the through holes intake plate (vertical adjustment) 1571 are formed in the substantially flat surface intake plate (vertical adjustment) 1540 on the upper side intake plate (vertical adjustment) 1530 facing the filament blanks 1171. In some embodiments, the numerous through-holes of intake plate (vertical adjustment) 1571 widen towards the surface on the underside of intake plate (vertical adjustment) 1530 of intake plate (vertical adjustment) 1510, which is opposite the substantially flat surface of intake plate (vertical adjustment) 1540 on the top side of intake plate (vertical adjustment) 1530.In some embodiments, the method comprises generating a negative pressure gradient between the pressure on the upper side of the intake plate (vertical adjustment) 1530 of the intake plate (vertical adjustment) 1510 of the vertical adjustment unit 1500, which faces the filament blanks 1171, and the pressure on the lower side of the intake plate (vertical adjustment) 1520 of the same intake plate (vertical adjustment) 1510. In some embodiments, the method comprises maintaining a lower pressure on the lower side of the intake plate (vertical adjustment) 1520 of the same intake plate (vertical adjustment) 1510 of the vertical adjustment unit 1500 as a reference pressure, while the pressure on the upper side of the intake plate (vertical adjustment) 1530 of the intake plate (vertical adjustment) 1510 of the vertical adjustment unit 1500 is 1500 above the reference pressure. For example, the reference pressure can be chosen as atmospheric pressure.In some embodiments, the method comprises controlling the position of the vertical adjustment unit 1500 relative to the filament blanks 1171 held in the angular adjustment unit 1400, so that the filament blanks 1171 are aligned by suction against the suction plate (vertical adjustment) 1510 of the vertical adjustment unit 1500 in the through holes of the suction plate (vertical adjustment) 1571. In some embodiments, the method comprises moving the vertical adjustment unit 1500 relative to the insertion unit 1600 towards each other in a direction, as shown in [reference]. Fig. indicated by an arrow 2051.

[0146] In some embodiments, the filament blanks 1171 are transferred from the vertical adjustment unit 1500 to the insertion unit 1600. In some embodiments, the vertical adjustment unit 1500 also serves as the insertion unit 1600; that is, for the next process step, as described below, the filament blanks 1171 arranged in the vertical adjustment unit 1500 remain in place, so that they are now aligned in the insertion unit 1600.

[0147] In some embodiments, the method includes trimming the filament blanks 1171, for example to the length of the above with reference to Fig. described trimmed filament blanks 371a, 371b, 371c. For example, a knife (not shown) can be used to cut the filament blanks 1171, similar to a razor blade, in a plane parallel to the substantially flat surface of the suction plate (insertion unit) 1640 of the suction plate (insertion unit) 1610 of the insertion unit 1600, while the filament blanks 1171 are held in the insertion unit 1600 to obtain trimmed filament blanks 271. In some embodiments, as in Fig. As shown, the trimmed filament sections 271 barely protrude beyond the essentially flat surface of the intake plate (insertion unit) 1640 of the intake plate (insertion unit) 1610 of the insertion unit 1600. In some embodiments, the trimmed filament sections 271 form the support structure 270. The trimmed filament sections 271a, 271b, and 271c are used in the manufacturing process of the solar stack described above (see Fig. One effect can be that the filament blanks 1171 are longer before being inserted into the insertion unit 1600 than the trimmed filament blanks 271a, 271b, and 271c into which they are to be formed. The greater length facilitates the handling of the filament blanks 1171, as described above (see Fig. as well as 12A to 20D).

[0148] In some embodiments, repeated transfer and cutting processes are required, as in Fig. shown to fill the insertion unit 1600 with trimmed filament cutouts 271.

[0149] In S985, the insertion unit 1600 is positioned on the substrate 210. In some embodiments, the positioning of the insertion unit 1600 relative to the substrate 210 includes aligning the trimmed filament blanks 271a, 271b, 271c in the insertion unit 1600 with an arrangement of target positions on the substrate 210. In some embodiments, the trimmed filament blanks 271a, 271b, 271c are brought into contact with the substrate 210, with a free end of the trimmed filament blanks 271a, 271b, 271c contacting the substrate 210 at the arrangement of target positions. One embodiment is described in Fig. depicted.

[0150] In S990, the filament blanks 1171 are aligned relative to the substrate 210. In some embodiments, at least one free end of filament blank 1171a is fixed in at least one adhesive point 262a, 262b, 262c on the substrate 210. In some embodiments, the pressure gradient between the lower pressure on the lower side of the suction plate and the pressure on the upper side of the suction plate is reduced or vice versa in order to release and / or discharge the filament blanks 1171 from the suction plate.

[0151] Although the steps of an exemplary process for transferring filament blanks 1171 from one device to another, for example, from the cutting unit to the overhead transport unit, have been described in detail, it should be noted that similar steps can also be applied for transfers between other devices. In particular, the pressure differential between the top surface facing the feeder and the bottom surface facing away from one intake plate can be increased to pick up and hold the filament blanks 1171. Simultaneously, the pressure differential between the top surface facing the feeder and the bottom surface facing away from another intake plate can be decreased to release the filament blanks 1171. This is possible when devices with intake plates work together, as described in some examples above, to transfer the filament blanks 1171 from one intake plate to another.

[0152] In some embodiments (not shown), the filament blanks 1171 are detached by electrostatically charging the suction plate. This can, among other things, cause the filament blanks 1171 to experience a repulsive force due to a surface charge of the device, thereby facilitating their detachment from the device.

[0153] Although specific embodiments have been presented and described herein, it is clear to those skilled in the art that a multitude of alternative and / or equivalent embodiments are possible instead of those shown and described, without departing from the scope of protection of the present invention. This application is intended to cover all adaptations or variations of the embodiments described herein.

[0154] Although some drawings contain exemplary dimensions, these are to be understood as merely illustrative. They are neither consistent from drawing to drawing, nor do they limit the scope of protection of the present disclosure to the dimensions indicated or their combinations or ratios. The dimensions merely provide an order of magnitude for certain embodiments. In particular, the invention can also be realized with other orders of magnitude, other dimensions, or other dimensional ratios. The drawings are not to scale.

[0155] The embodiments described herein are explained by means of exemplary embodiments. It is understood, however, that individual aspects of the embodiments may be claimed separately and that one or more features of the different embodiments may be combined.

[0156] Further embodiments of the invention in various aspects are listed below.

[0157] In one embodiment of the invention according to one aspect, a method for producing electroactive cells comprises: - provide a substrate 210, - providing a contact layer of substrate 220 on the substrate 210, - providing an insulating layer 230 on the contact layer substrate 220, - attaching at least one trimmed filament section 271a, 271b, 271c as a supporting element to the substrate 210, - providing an active layer on substrate 210 and - providing a backside contact layer 290 above the active layer 280

[0158] In some embodiments, attaching the at least one trimmed filament blank 271a, 271b, 271c to the substrate 210 includes attaching the at least one trimmed filament blank 271a, 271b, 271c to the contact layer substrate 220.

[0159] In some embodiments, providing the insulating layer 230 on the contact layer substrate 220 includes forming at least one opening that exposes an associated section of the contact layer substrate 220.

[0160] In some embodiments, attaching the at least one trimmed filament blank 271a, 271b, 271c to the substrate 210 consists of inserting the at least one supporting element into the at least one opening above the contact layer substrate 220.

[0161] In some embodiments, the method for producing electroactive cells includes structuring the insulating layer 230 to form at least one opening to the associated section of the contact layer substrate 220.

[0162] In some embodiments, the method for producing electroactive cells includes applying a resist layer to the insulating layer 230.

[0163] In some embodiments, the photoresist layer / hard mask 250 has at least one opening configured to expose a central region of the at least one opening in the insulating layer 230. In some embodiments, the at least one opening has a negative undercut.

[0164] In some embodiments, the method for producing electroactive cells further includes irradiating the resist layer.

[0165] In some embodiments, the angle of incidence of the radiation 261 on a substantially flat surface of the resist layer is oblique.

[0166] In some embodiments, the method for producing electroactive cells includes removing the photoresist layer / hard mask 250. In some embodiments, removing the photoresist layer / hard mask 250 corresponds to lifting the hard mask 259 from the insulating layer 230.

[0167] In some embodiments, the method for producing electroactive cells includes applying an adhesive layer to the substrate 210.

[0168] In some embodiments, an adhesive pattern is formed in the adhesive layer.

[0169] In some embodiments, the adhesive pattern comprises at least one adhesive point 262a, 262b, 262c.

[0170] In some embodiments, the at least one adhesive point 262a, 262b, 262c is arranged exclusively on the contact layer substrate 220.

[0171] In some embodiments, the at least one adhesive point 262a, 262b, 262c does not completely cover the exposed part of the contact layer substrate 220 in the opening provided in the insulating layer 230.

[0172] In some embodiments, attaching the at least one trimmed filament blank 271a, 271b, 271c to the substrate 210 consists of attaching the at least one trimmed filament blank 271a, 271b, 271c to the at least one adhesive point 262a, 262b, 262c.

[0173] In some embodiments, attaching the at least one trimmed filament blank 271a, 271b, 271c to the substrate 210 includes providing a support structure 270 which includes at least one such trimmed filament blank 271a, 271b, 271c.

[0174] In some embodiments, attaching the at least one trimmed filament blank 271a, 271b, 271c to the substrate 210 consists of turning the substrate 210 with the adhesive layer towards the mounting film.

[0175] In some embodiments, providing the active layer above the substrate 210 includes the following: - depositing the active layer onto at least one trimmed filament blank 271a, 271b, 271c, or - the active layer 280 is deposited over at least one trimmed filament section 271a, 271b, 271c before at least one supporting element is cut off as a trimmed filament section 271a, 271b, 271c

[0176] In some embodiments, the deposition of the active layer 280 onto the at least one trimmed filament blank 271a, 271b, 271c comprises the following: - depositing a semiconducting material onto at least one trimmed filament blank 271a, 271b, 271c, - Doping of the semiconductor material with a dopant of the first kind, - Deposition of further semiconducting material on at least one trimmed filament blank 271a, 271b, 271c, - Doping of the semiconductor material with a second type of dopant

[0177] In some embodiments, the first dopant is an n-type dopant. In some embodiments, the second dopant is a p-type dopant. In some embodiments, the first dopant is a p-type dopant. In some embodiments, the second dopant is an n-type dopant. In some embodiments, the p-type dopant is selected from a group of p-type dopants consisting of boron, aluminum, gallium, indium, and any combinations thereof. In some embodiments, the n-type dopant is selected from a group of n-type dopants consisting of phosphorus, arsenic, antimony, bismuth, lithium, and any combinations thereof.

[0178] In some embodiments, the formation of the active layer 280 includes the deposition of a conductive front contact layer prior to doping the semiconductor material with the dopant of the first kind.

[0179] In some embodiments, the deposition of the active layer 280 onto the at least one trimmed filament blank 271a, 271b, 271c comprises the following: - deposition of an anode substance, - deposition of an electrolytic substance and - deposition of a cathode substance

[0180] In one embodiment of the invention according to one aspect, an electroactive device comprises a substrate 210, an active layer 280 applied to the substrate 210, and a support structure 270. In some embodiments, the support structure 270 is arranged between the substrate 210 and the active layer 280.

[0181] In some embodiments, the electroactive device further comprises a backside contact layer 290. In some embodiments, the active layer 280 is applied between the support structure 270 and the backside contact layer 290.

[0182] In some embodiments, the electroactive device further comprises: - a contact layer of substrate 220 on the substrate 210

[0183] In some embodiments, the support structure 270 is arranged between the contact layer substrate 220 and the backside contact layer 290.

[0184] In some embodiments, the active layer 280 comprises a front contact layer 285.

[0185] In some embodiments, the electroactive device further comprises an adhesive layer on the substrate 210. In some embodiments, the support structure 270 is attached to the adhesive layer. In some embodiments, the adhesive layer has areas located above the contact layer of the substrate 220. In some embodiments, a projection of the support structure 270 extends towards the substrate 210 within the adhesive areas.

[0186] In some embodiments, the support structure 270 comprises several separate load-bearing elements. In some embodiments, the separate load-bearing elements are arranged in a predetermined grid. In some embodiments, the support structure 270 is formed by the plurality of trimmed filament sections 271, which are substantially parallel to one another and perpendicular to the substrate 210. In some embodiments, the load-bearing elements are manufactured as trimmed filament sections 271a, 271b, 271c.

[0187] In some embodiments, the electroactive device further comprises an insulating layer 230 between the substrate contact layer 220 and the backside contact layer 290. In some embodiments, the trimmed filament blanks 271a, 271b, 271c are inserted into openings provided in the insulating layer 230. In some embodiments, grooves formed in the insulating layer 230 are filled with material from the backside contact layer 290. In some embodiments, grooves formed in the substrate contact layer 220 are filled with material from the insulating layer 230.

[0188] In some embodiments, the substrate 210 is provided as a superstrate that is essentially transparent to radiation that causes a photoelectric effect in the active layer. In some embodiments, the support is provided as a substrate 210 configured to reflect radiation that causes a photoelectric effect in the active layer.

[0189] In some embodiments, the active layer 280 is configured to convert radiation incident on the active layer 280 into electric current.

[0190] In some embodiments, the electroactive device is designed as a solar cell.

[0191] In some embodiments, the active layer 280 is configured to convert chemical energy into electrical energy.

[0192] In some embodiments, the electroactive device is provided as a rechargeable galvanic cell.

[0193] In some embodiments, the adhesive layer consists of solder and / or a melt.

[0194] In some embodiments, a solar module includes an electroactive device.

[0195] In one embodiment of the invention according to one aspect, a method for providing a support structure 270 in an electroactive device comprises the following: - providing a filament fabric 1000, consisting of a large number of warp and weft threads 1071 / 1021, - separating the weft thread 1021 from the filament fabric 1000, - aligning filament cuts 1171 of the multitude of warp threads 1071 in an insertion unit 1600, and - aligning the insertion unit 1600 with respect to a zero point

[0196] In some embodiments, a method for providing a support structure 270 in an electroactive device further comprises controlling the shaping of the filament fabric 1000 according to a predetermined arrangement. In some embodiments, the insertion unit 1600 comprises a suction plate (insertion unit) 1610 with a hole arrangement.

[0197] In some embodiments, a method for providing a support structure 270 in an electroactive device further comprises preparing a negative pressure gradient between a first pressure on the upper side of the suction plate facing the plurality of filament blanks 1171 and a second pressure on the lower side of the suction plate facing away from the plurality of filament blanks 1171, whereby the plurality of filament blanks 1171 are each drawn to a corresponding hole of the arrangement in the suction plate.

[0198] In some embodiments, a method for providing a support structure in an electroactive device further comprises controlling a position of the insertion unit relative to the plurality of filament blanks 1171, such that free ends of the plurality of filament blanks 1171 are fixed in the holes after being sucked in by the suction plate.

[0199] In some embodiments, a method for providing a support structure in an electroactive device further comprises aligning the plurality of filament blanks 1171 in a predetermined direction relative to the intake plate. In some embodiments, the surface of the intake plate is substantially planar. In some embodiments, the predetermined direction is perpendicular to the surface of the intake plate.

[0200] In some embodiments, the flush alignment of the insertion unit 1600 to the substrate 210 includes the following: - control the position of the insertion unit 1600 relative to the substrate 210 in order to align the multitude of filament blanks 1171 with an arrangement of target positions on the substrate 210, and - preparing the attachment of the multitude of filament blanks 1171 to the substrate 210, wherein a free end of the multitude of filament blanks 1171 comes into contact with the substrate 210 through the selected arrangement of the target positions.

[0201] In some embodiments, a method for providing a support structure in an electroactive device further comprises increasing the low pressure to detach the plurality of filament blanks 1171 from the suction plate.

[0202] In one embodiment of the invention according to one aspect, a device for manufacturing electroactive components, comprising: - a cutting unit 1200 configured to fix a filament fabric 1000 during the cutting process, with a plurality of filament cuts 1171 being aligned according to a predetermined arrangement, - an insertion unit 1600, designed to accommodate multiple filament blanks 1171, and - a control system configured to control the movement of the insertion unit 1600 relative to a substrate 210 to enable the transfer of the multitude of filament blanks 1171 onto the substrate 210

[0203] In some embodiments, a device for the manufacture of electroactive components, comprising a loom configured to produce the filament fabric 1000 with a plurality of warp and weft threads 1071 / 1021.

[0204] In some embodiments, a device for manufacturing electroactive components further comprises a cutting unit 1200 configured to separate the weft thread 1021 of the filament fabric 1000 from the filament fabric 1000 to obtain a plurality of filament blanks 1171. In some embodiments, the control system is configured to form the filament fabric 1000 according to the predetermined array layout.

[0205] In some embodiments, the insertion unit comprises a suction plate with a row of holes. In some embodiments, the device is configured such that a negative pressure gradient is generated between a first pressure on the upper side of the suction plate facing the plurality of filament blanks 1171 and a second pressure on the lower side of the suction plate facing away from it.

[0206] In some embodiments, the control system is configured to control the position of the insertion unit 1600 relative to the filament blanks 1171 so that the free ends of the filament blanks 1171a are fixed in the holes after being sucked in by the suction plate (insertion unit) 1610.

[0207] In some embodiments, the control system is configured to align the multitude of filament blanks 1171 in a predetermined direction towards the suction plate.

[0208] In some embodiments, the surface of the intake plate is essentially planar.

[0209] In some embodiments, the specified direction is perpendicular to the surface of the suction plate.

[0210] In some embodiments, the device is configured to control the position of the insertion unit 1600 relative to the substrate 210 in order to align the plurality of filament blanks 1171 with a series of target positions on the substrate 210.

[0211] In some embodiments, the device is configured to deposit the plurality of filament blanks 1171 onto the substrate 210, wherein a free end of the plurality of filament blanks 1171 touches the substrate 210 by the arrangement of the target positions.

[0212] In some embodiments, the device is configured to reduce the pressure gradient between the first pressure and the second pressure in order to release the multitude of filament blanks 1171 from the suction plate.

[0213] In some embodiments, a filament fabric 1000 comprises several dense sections of filament fabric 1020 in which a plurality of warp and weft threads 1071 / 1021 form dense sections of filament fabric 1020 and which are separated from each other by a loose-mesh section of filament fabric 1070 consisting of sections of the plurality of warp threads 1071 that are free of weft threads 1021.

[0214] In some embodiments, the warp threads 1071 consist of glass fibers.

[0215] In some embodiments, the mesh size of the filament fabric 1000 in the dense fabric sections is in the range of 100 µm to 1000 µm.

[0216] In some embodiments, the width of the area with the large mesh size ranges from 2 mm to 200 mm.

[0217] For the purposes of this agreement, the term “substrate” 200 may refer to a covering material and / or a semi-finished product whose surface is affected by a process step such as the deposition or application of a material onto the substrate 210, whereby the substrate 210 is covered with the deposited or applied material, or the etching of the substrate 210, whereby material is removed from the substrate 210.

[0218] In this context, the term “homogeneous layer” can mean that the material of the homogeneous layer is essentially uniformly distributed on an underlying substrate 210 or is otherwise uniformly applied.

[0219] For the purposes of this publication, the term "fabric" also includes fabrics, woven materials, textiles, carpets, etc., suitable for obtaining filament cuts 1171, as described in detail herein.

[0220] The term "over," used here to describe the formation of a feature, e.g., a layer "over" a side or surface, can mean that the feature, e.g., the layer, is formed "directly on," e.g., in direct contact with, the side or surface in question. The term "over," used here to describe the formation of a feature, e.g., a layer "over" a side or surface, can also mean that the feature, e.g., the layer, is formed "indirectly on" the side or surface in question, with one or more additional layers arranged between the side or surface in question and the formed layer.

[0221] Directional terms such as "top", "bottom", "front", "back", "front", "back", etc., refer to the orientation of the described figure(s). The terms "on" and "over" can also be used relative to the substrate 210 when a described operation is performed that affects the substrate 210. Therefore, in the finished product, regardless of the description of a layer above a substrate 210, the substrate 210 can form a top layer above the layer if, for example, the substrate 210 is turned over with the layer above it in the finished product.

[0222] Terms such as "first", "second", etc. are also used here to describe different elements, regions, sections, etc., and are not to be understood as restrictive.

[0223] In this document, the term "exemplary" means that something serves as an example, case study, or illustration. Any aspect or design described here as "exemplary" is not necessarily to be interpreted as being preferable or advantageous over other aspects or designs.

[0224] In this document, the terms “at least one” and “one or more” are to be understood as including any whole number equal to or greater than one, i.e., one, two, three, four, etc.

[0225] For the purposes of this agreement, the term "a plurality" can also include any whole number greater than or equal to two, i.e., two, three, four, five, etc.

[0226] Although the above, particularly in the description of process steps according to some embodiments, refers to providing one layer on top of another, "on" here means "above" or "over" another layer, unless expressly stated otherwise or clearly evident to a person skilled in the art. For example, a step of providing one layer on top of another layer, where one layer itself performs a function other than bonding, may involve the use of an adhesive with one and / or the other layer. In this example, one layer can be understood to comprise an adhesive layer embedded between a functional area of ​​one layer and the other layer, and in contact with both.Alternatively, the step of providing one layer on top of the other layer can be understood as including the application of an adhesive layer for contacting the other layer and subsequently the application of the functional area of ​​one layer for contacting the adhesive layer.

[0227] Embodiments of the invention are described with reference to the following numbered sections, with preferred features being explained in the dependent sections. Understanding of the sections is facilitated by linking the features mentioned in the sections with the corresponding reference numerals in the drawings. However, the reference numerals in the following sections are not to be interpreted as limiting the scope of the disclosure to the respective drawing; they merely serve to improve the clarity of the sections.

[0228] The following sections describe a method for producing an electroactive cell. The method comprises providing a substrate 210 with an insulating layer 230 on a support, wherein the insulating layer 230 has at least one opening to the substrate 210, inserting at least one trimmed filament section 271a, 271b, 271c into the at least one opening on the substrate 210, and depositing an active layer 280 on the at least one trimmed filament section 271a, 271b, 271c.

[0229] Determination 1: A method for manufacturing electroactive cells, the method comprising the following: - provide a substrate 210, - providing a contact layer of substrate 220 on the substrate 210, - providing an insulating layer 230 on the contact layer substrate 220, - attaching at least one trimmed filament section 271 as a supporting element to the substrate 210, - depositing an active layer 280 on the substrate 210, and - Deposition of a backside contact layer 290 over the active layer 280

[0230] Determination 2: The method according to Determination 1, wherein the attachment of the at least one trimmed filament section 271a, 271b, 271c to the substrate 210 comprises the following: - at least one trimmed filament section 271a, 271b, 271c is applied as a supporting element to the contact layer substrate 220.

[0231] Determination 3: The method according to Determination 2, wherein the deposition of the insulating layer 230 onto the contact layer substrate 220 comprises the following: - producing at least one opening that exposes an associated section of the contact layer substrate 220, wherein the attachment of the at least one trimmed filament blank 271a, 271b, 271c to the substrate 210 comprises the following: - Inserting at least one trimmed filament section 271a, 271b, 271c into at least one opening above the contact layer of substrate 220

[0232] Provision 4: The procedure according to any of Provisions 1 to 3, comprising: - Structuring of the insulating layer 230 to form at least one opening to the corresponding section of the contact layer substrate 220

[0233] Provision 5: The procedure for Provision 4, comprising: - depositing a resist layer on the insulating layer 230, wherein the resist layer has at least one opening configured such that a central section of the at least one opening in the insulating layer 230 is exposed, wherein the at least one opening has a negative undercut

[0234] Provision 6: The procedure for Provision 5, further comprising: - expose the resist layer to radiation 261, whereby the angle of incidence of the radiation 261 on a substantially flat surface of the resist layer may be oblique.

[0235] Provision 7: The determination procedure 5 or 6, comprising: - removal of the resist layer, wherein the removal of the resist layer corresponds to lifting the hard mask 259 from the insulating layer 230

[0236] Provision 8: The procedure according to any one of Provisions 1 to 7, comprising: - provide at least one adhesive dot 262a, 262b, 262c on the substrate 210

[0237] Provision 9: The procedure according to any of Provisions 1 to 8, comprising: - forming an adhesive pattern using at least one adhesive dot 262a, 262b, 262c

[0238] Determination 10: The method according to Determination 9, wherein the adhesive pattern comprises the following: - at least one adhesive point 262a, 262b, 262c, wherein the at least one adhesive point 262a, 262b, 262c is arranged exclusively on the contact layer substrate 220

[0239] Determination 11: The method according to Determination 10, wherein the at least one adhesive point 262a, 262b, 262c only partially covers the exposed part of the contact layer substrate 220 in the opening provided in the insulating layer 230.

[0240] Destination 12: The method according to any of Destinations 8 to 11, wherein the fixing of the at least one trimmed filament section 271a, 271b, 271c to the substrate 210 comprises the following: - attaching at least one trimmed filament section 271a, 271b, 271c to at least one adhesive point 262a, 262b, 262c

[0241] Provision 13: The method according to any of the preceding provisions, wherein the fixing of the at least one trimmed filament section 271a, 271b, 271c to the substrate 210 comprises the following: - providing a support structure 270 which includes at least one trimmed filament section 271a, 271b, 271c as a supporting element

[0242] Determination 14: The method according to Determination 13, wherein the fixing of the at least one trimmed filament section 271a, 271b, 271c to the substrate 210 comprises the following: - Turn over the substrate 210 so that the adhesive layer faces the mounting side, which is itself located on the substrate 210.

[0243] Determination 15: The method according to any of Determinations 1 to 14, wherein the deposition of the active layer 280 on the substrate 210 comprises the following: - depositing the active layer 280 onto at least one trimmed filament blank 271a, 271b, 271c, or

[0244] Provision 16: The method according to any of Provisions 1 to 15, wherein the deposition of the active layer 280 on the at least one trimmed filament blank 271 comprises the following: - depositing a semiconducting material onto at least one trimmed filament blank 271a, 271b, 271c, - doping the semiconductor material with a dopant of the first kind, - depositing further semiconducting material onto at least one trimmed filament blank 271a, 271b, 271c, and - doping the semiconducting material with a second-type dopant

[0245] Determination 17: The method of determination 16: - where the dopant of the first kind is an n-dopant, and - wherein the second type of dopant is a p-dopant; or - where the dopant of the first kind is a p-dopant, and - where the second dopant is an n-dopant

[0246] Determination 18: The method of determination 17: - wherein the p-doper is selected from a group of p-dopers consisting of boron, aluminum, gallium, indium and any combination thereof; and - wherein the n-doper is selected from a group of n-dopers consisting of phosphorus, arsenic, antimony, bismuth, lithium and any combination thereof

[0247] Provision 19: The procedure according to any of the preceding provisions, wherein the formation of the active layer 280 comprises the following: - Deposition of a conductive front contact layer 285 prior to doping the semiconductor material with the dopant of the first kind

[0248] Provision 20: The method according to one of Provisions 15 to 19, wherein the deposition of the active layer onto the at least one trimmed filament blank 271a, 271b, 271c comprises the following:

[0249] The following provisions relate to an electroactive device. The electroactive device comprises a substrate 310, an active layer 380 deposited thereon, and a support structure 370, wherein the support structure 370 comprises an arrangement of trimmed filament sections 371a, 371b, 371c between the substrate 310 and the active layer 380.

[0250] Provision 21: an electroactive device comprising: - a substrate 310, - an active layer 380 deposited on the substrate 310, and - a support structure 370, wherein the support structure is placed between the substrate 310 and the active layer 380

[0251] Provision 22: The electroactive device according to Provision 21, further comprising: - a backside contact layer 390, wherein the active layer 380 is applied between the support structure 370 and the backside contact layer 390

[0252] Provision 23: The electroactive device according to Provision 22, further comprising: - a contact layer substrate 320 on the substrate 310, wherein the support structure 370 is arranged between the contact layer substrate 320 and the backside contact layer 390

[0253] Determination 24: The electroactive device according to Determination 23, wherein the active layer 380 comprises the following: - - a front contact layer 385

[0254] Provision 25: The electroactive device according to Provision 21, further comprising: - at least one adhesive point 360 on the substrate 310, wherein the support structure 370 is attached by means of at least one adhesive point 360

[0255] Definition 26: The electroactive device according to Definition 25, wherein at least one adhesive point 360 comprises sections of the at least one adhesive point 362 which are arranged above the contact layer substrate 320; and wherein a projection of the support structure 370 in the direction of the substrate 310 is located within the at least one section of the at least one adhesive point 362a, 362b, 362c.

[0256] Provision 27: The electroactive device according to Provision 21, wherein the support structure 370 comprises the following: - - a large number of disjoint trimmed filament sections 371

[0257] Definition 28: The electroactive device according to Definition 27, in which the trimmed filament blanks 371 are spaced apart from each other in a predetermined arrangement.

[0258] Definition 29: The electroactive device according to Definition 27 or 28, wherein the support structure 370 consists of a plurality of trimmed filament blanks 371 which serve as supporting elements arranged substantially parallel to each other perpendicularly on the substrate 310.

[0259] Definition 30: The electroactive device according to definitions 27 to 29, wherein the trimmed filament blanks 371 are cut from a filament.

[0260] Provision 31: The electroactive device according to any one of provisions 27 to 30, further comprising: - - an insulating layer 330 arranged between the contact layer substrate 320 and the backside contact layer 390, wherein the trimmed filament blanks 371 are inserted into the provided openings of the insulating layer 330.

[0261] Definition 32: The electroactive device according to Definition 31, in which grooves formed in the insulating layer 330 are filled with material of the backside contact layer 390.

[0262] Definition 33: The electroactive device according to Definition 31, in which grooves formed in the contact layer substrate 320 are filled with material of the insulating layer 330.

[0263] Provision 34: The electroactive device according to any of provisions 21 to 33, wherein the substrate 310 is provided as a cover layer which is substantially transparent to radiation which causes a photoelectric effect in the active layer 380.

[0264] Provision 35: The electroactive device according to any of provisions 21 to 33, wherein the substrate 310 is provided as a support configured to reflect radiation which produces a photoelectric effect in the active layer 380.

[0265] Definition 36: The electroactive device according to any of the definitions 21 to 35, wherein the active layer 380 is configured to convert the radiation incident on the active layer 380 into electric current.

[0266] Provision 37: The electroactive device according to Provision 36, wherein the electroactive device is provided as a solar cell.

[0267] Definition 38: The electroactive device according to any of the definitions 21 to 37, wherein the active layer 380 is configured to convert chemical energy into electrical energy.

[0268] Definition 39: The electroactive device according to Definition 38, wherein the electroactive device is provided as a rechargeable galvanic cell. Definition 40: The electroactive device according to Definition 38 or 39, wherein the at least one adhesive point comprises solder and / or a melt.

[0269] Provision 41: A solar module comprising an electroactive device according to any of the preceding provisions.

[0270] The following provisions relate to a method for providing trimmed filament sections 271a, 271b, 271c for an electroactive device. The method for providing a support structure 270 in an electroactive device comprises providing a filament fabric 1000 with several warp and weft threads 1071 / 1021, separating the weft thread 1021 from the warp thread 1071, attaching filament sections 1171 of the warp thread 1071 by means of a support structure 270, and attaching the support structure 270 to a substrate 210.

[0271] Provision 42: Method for providing a support structure 270 in an electroactive device, the method comprising: - providing a filament fabric 1000, consisting of a large number of warp threads 1071 and weft threads 1021, - cutting the weft thread 1021 from the filament fabric 1000, - align filament cuts 1171 of the multitude of warp threads 1071 in an insertion unit 1600, and - Align insertion unit 1600 with substrate 210

[0272] Provision 43: The procedure for Provision 42, further comprising: - control the shaping of the filament fabric 1000 according to a predefined array layout

[0273] Provision 44: The method according to Provision 42 or 43, wherein the insertion unit 1600 comprises an intake plate (insertion unit) 1610 with through holes intake plate (insertion unit) 1671, the method further comprises: - generating a negative pressure gradient between a first pressure on the upper side of the suction plate (insertion unit) 1610, facing the multitude of trimmed filament blanks 271a, 271b, 271c, and a second pressure on the lower side of the suction plate (insertion unit) 1620, causing the multitude of filament blanks 1171 to be drawn into a corresponding through-hole in the suction plate (insertion unit) 1610.

[0274] Provision 45: The determination procedure 44, the procedure further comprising the following: - Controlling the position of the insertion unit 1600 relative to the filament blanks 1171, so that the free ends of the filament blank 1171a are held in the through holes of the suction plate (insertion unit) 1671 after being drawn in by the suction plate (insertion unit) 1610.

[0275] Provision 46: The determination procedure 45, the procedure further comprising the following: - aligning the multitude of filament blanks 1171 in a predetermined direction in relation to the suction plate (insertion unit) 1610

[0276] Determination 47: The method according to Determination 46, wherein the surface of the intake plate (insertion unit) 1640 is substantially planar and the specified direction is perpendicular to the planar surface of the intake plate (insertion unit) 1640 of the intake plate (insertion unit) 1610.

[0277] Determination 48: The procedure according to one of determination numbers 42 to 47, wherein aligning the insertion unit 1600 to the substrate 210 comprises the following: - controlling the position of the insertion unit 1600 relative to the substrate 210 in order to align the plurality of trimmed filament blanks 271a, 271b, 271c with an arrangement of target positions on the substrate 210; and placing the plurality of trimmed filament blanks 271a, 271b, 271c onto the substrate 210, wherein a free end of the plurality of trimmed filament blanks 271a, 271b, 271c touches the substrate 210 at the arrangement of target positions

[0278] Provision 49: The procedure according to any of the provisions 42 to 48, furthermore comprising: - increase the vacuum to detach the multitude of trimmed filament blanks 271a, 271b, 271c from the suction plate (insertion unit) 1610

[0279] The following provisions relate to a device for manufacturing electroactive components. The device for manufacturing electroactive components comprises a cutting unit 1200, which fixes a filament fabric 1000 during cutting, aligning several filament blanks 1171 in a predetermined array, an insertion unit 1600 for receiving several filament blanks 1171, and a control system for controlling the insertion unit 1600 relative to a substrate 210 to enable the transfer of the filament blanks 1171 onto the substrate 210.

[0280] Provision 50: A device for manufacturing electroactive components, comprising: - a cutting unit 1200 configured to fix a filament fabric 1000 during the cutting process, wherein a plurality of filament cuts 1171 are aligned in a predefined array, - an insertion unit 1600 configured to receive multiple filament blanks 1171, and - a control system configured to control the movement of the insertion unit 1600 relative to a substrate 210 to enable the transfer of the plurality of trimmed filament blanks 271a, 271b, 271c onto the substrate 210

[0281] Determination 51: The apparatus of Determination 50, consisting of: - - a loom configured to form the filament fabric 1000, which consists of a multitude of warp threads 1071 and weft threads 1021

[0282] Provision 52: The device according to Provision 50 or 51, further comprising: - a cutting unit 1200 configured to separate the weft thread 1021 of the filament fabric 1000 from the filament fabric 1000 to obtain the multitude of filament cuts 1171

[0283] Definition 53: The device according to one of the definition points 50 to 52, wherein the control system is configured to form the filament fabric 1000 according to the specified array layout.

[0284] Definition 54: The device according to one of the definitions 50 to 53, wherein the insertion unit 1600 comprises an intake plate (insertion unit) 1610 with through holes intake plate (insertion unit) 1671 and the device is configured to create a negative pressure gradient between a first pressure on the upper side of the intake plate facing the plurality of trimmed filament blanks 271a, 271b, 271c

[0285] (Insertion unit) 1630 of the intake plate (Insertion unit) 1610 and a second pressure on the underside of the intake plate (Insertion unit) 1620 of the intake plate (Insertion unit) 1610.

[0286] Provision 55: The device according to Provision 54, wherein the control system is configured to control a position of the insertion unit 1600 relative to the plurality of filament blanks 1171, such that the plurality of filament blanks 1171 are held in the through holes of the suction plate (insertion unit) 1671 after being sucked in by the suction plate (insertion unit) 1610.

[0287] Provision 56: The device according to Provision 55, wherein the control system is configured to align the plurality of filament blanks 1171 in a predetermined direction with respect to the suction plate (insertion unit) 1610.

[0288] Provision 57: The device according to Provision 56, wherein a flat surface of the intake plate (insertion unit) 1640 of the intake plate (insertion unit) 1610 is substantially planar and wherein the specified direction is perpendicular to the flat surface of the intake plate (insertion unit) 1640 of the intake plate (insertion unit) 1610.

[0289] Provision 58: The device according to any of Provisions 50 to 57, wherein the device is configured to control the position of the insertion unit 1600 relative to the substrate 210 in order to align the plurality of trimmed filament blanks 271a, 271b, 271c with an arrangement of target positions on the substrate 210; and wherein the device is configured to place the plurality of trimmed filament blanks 271a, 271b, 271c on the substrate 210, wherein the free ends of the plurality of trimmed filament blanks 271a, 271b, 271c touch the substrate 210 by means of the manner of the arrangement of the target positions.

[0290] Definition 59: The device according to any of the definitions 50 to 58, wherein the device is configured to reduce the pressure gradient between the first pressure and the second pressure in order to release the plurality of trimmed filament blanks 271a, 271b, 271c from the suction plate (insertion unit) 1610.

[0291] The following provisions refer to a filament fabric 1000. The filament fabric 1000 comprises several dense sections of filament fabric 1020, wherein a plurality of warp and weft threads 1071 / 1021 form a dense filament fabric 1000. The several dense sections of filament fabric 1020 are separated from one another by widely spaced sections of filament fabric 1070, which are formed by sections of the plurality of warp threads 1071 without weft threads 1021:

[0292] Determination 60: A filament fabric 1000, consisting of: - several dense sections of filament fabric 1020, in which a multitude of warp threads 1071 and weft threads 1021 form a dense filament fabric 1000 and are separated from each other by widely spaced sections of filament fabric 1070, which consist of sections of the multitude of warp threads 1071 that are free of weft threads 1021

[0293] Determination 61: The filament fabric 1000 according to Determination 60, wherein the plurality of warp threads 1071 consists of glass fibers.

[0294] Provision 62: The filament fabric 1000 according to one of provisions 60 to 61, wherein the mesh size of the filament fabric 1000 in the dense sections filament fabric 1020 is in the range of 100 µm to 1000 µm and the width of the wide-mesh section filament fabric 1070 with the wide mesh size is in the range of 2 mm to 200 mm.

[00233] Reference character: 210 substrate 220 Contact layer substrate 230 Insulation layer 231 Contact opening series / parallel circuit 232 Opening of insulation layer 240 etching medium layer 250 photoresist layer / hard mask 254 Side profile Photoresist layer / hard mask 259 hard mask 260 structured mask 261 Radiation 270 support structure 280 active layer 290 Backside contact layer 300 solar module stack structure 310 substrate 311 Substrate surface 320 Contact layer substrate 330 Insulation layer 360° adhesive point 370 support structure 380 active layer 385 front contact layer 387 p-doped area 388 Semiconductor layer 389 n-doped area 390 Backside contact layer 800 solar module surface area 1000 filament fabrics 1020 dense sections of filament fabric 1021 weft thread 1070 wide-mesh sections of filament fabric 1071 warp threads 1072 distance 1100 Arrangement (filament cuts) 1171 filament cutouts 1200 cutting units 1210 Intake plate (cut to size) 1220 Underside of suction plate (cut to size) 1230 Top side of suction plate (cut to size) 1240 Molded part suction plate (cut to size) 1250 Cut-stop level suction plate (cutting) 1270 raised area top of suction plate (cutout) 1271 through holes in the suction plate (cut to size) 1272 guide grooves suction plate (cut to size) 1275 raised area top of suction plate (cutout) 1300 overhead transport unit 1310 Suction plate (overhead transport) 1320 Underside of suction plate (overhead transport) 1330 Top side of suction plate (overhead transport) 1371 through holes (overhead transport) 1372 guide grooves (overhead transport) 1400 Angle Adjustment Unit 1410 Intake plate (angle adjustment) 1420 Underside of intake plate (angle adjustment) 1430 Top of intake plate (angle adjustment) 1471 through holes in the intake plate (angle adjustment) 1472 Guide shapes Intake plate (angle adjustment) 1500 Vertical adjustment unit 1510 Intake plate (vertical adjustment) 1520 Underside of intake plate (vertical adjustment) 1530 Top of intake plate (vertical adjustment) 1540 flat surface suction plate (vertical adjustment) 1571 through holes in the intake plate (vertical adjustment) 1600 insertion unit 1610 Intake plate (insertion unit) 1620 Underside of suction plate (insertion unit) 1630 Top of intake plate (insertion unit) 1640 flat surface suction plate (insertion unit) 1751 Arrow [symbolizes the suction of filament cutouts 1171 from the suction plate (cutout) 1210 to the suction plate (overhead transport) 1310] 2310 Substrate second module unit 1171a free end filament cut 1171b opposite end filament cut 1371a, 1371b, 1371c trimmed filament sections first module unit 1372a End wall guide grooves (overhead transport) 1671a, 1671b, 1671c, 1671 Through-hole intake plate (insertion unit) 201a, 201b, 201c cells 202a, 202b Backside contact interruptions 220, 320 Contact layer substrate 220a (first) contact strip substrate 220b (second) contact strip substrate 222a Selected / visible selected areas Contact layer Substrate 220 222a Selected / visible selected areas Contact layer Substrate 220 corresponding to the selected areas Etching layer 242a, 242b, 242c 222a, 222b, 222c selected / visible selected areas contact layer substrate 230, 330 Insulation layer 231a, 231b, 231c Contact opening series / parallel circuit 232a, 232b, 232c Openings Insulation layer 234a, 234b, 234c selected areas insulation layer 2371a, 2371b, 2371c trimmed filament sections second module unit 241a, 241b, 241c, 242a, 242b, 242c selected areas etching medium layer 244a, 244b, 244c selected etched areas 252a, 252b Openings Photoresist layer / hard mask 252a, 252b, 252c Openings Photoresist layer / Hard mask 256a, 256b, 256c selected areas photoresist layer / hard mask 262a, 262b, 262c Adhesive dots 271a, 271b, 271c trimmed filament pieces 281a, 281b, 281c areas to be retained (active layer) 282a, 282b, 282c removable areas (active layer) 301a, 301b, 301c Stacked cells solar module 302a, 302b Openings Backside contact layer 332a, 332b Openings Contact layer Substrate 362a, 362b, 362c Adhesive dots 371a, 371b, 371c trimmed filament sections 381a, 381b, 381c areas to be retained (active layer) 390a, 390b, 390c selected areas backside contact layer

Claims

[1] Methods for the production of electroactive cells, comprising: - provide a substrate 210, - providing a contact layer of substrate 220 on the substrate 210, - providing an insulating layer 230 on the contact layer substrate 220, - placing at least one trimmed filament section 271 on the substrate 210, - providing an active layer 280 over the substrate 210 and - providing a backside contact layer 290 above the active layer 280 [2] An electroactive device comprising: - a substrate 310, an active layer 380 deposited above the substrate 310 and a support structure 370, wherein the support structure 370 is arranged between the substrate 310 and the active layer 380 [3] The electroactive device according to claim 2, further comprising: - a backside contact layer 390, wherein the active layer 380 is deposited between the support structure 370 and the backside contact layer 390 [4] The electroactive device according to claim 2, wherein the support structure 370 comprises a plurality of separately trimmed filament sections 371: - wherein the multitude of separately trimmed filament sections 371 are spaced apart from each other in a predefined array layout [5] The electroactive device according to any one of claims 2 to 4, wherein the active layer 380 is configured to convert the radiation incident on the active layer 380 into electric current. [6] The electroactive device according to claim 5, wherein the electroactive device is provided as a solar cell. [7] A solar module comprising an electroactive device according to one of claims 2.

6. [8] Method for providing a support structure 270 in an electroactive device, the method comprising: - providing a filament fabric 1000 with several warp threads 1071 and weft threads 1021, separating the weft thread 1021 from the filament fabric 1000, feeding filament blanks 1171 of the warp threads 1071 to an insertion unit 1600 and aligning the insertion unit 1600 on a substrate 210 [9] A device for manufacturing electroactive components, comprising: - a cutting unit 1200 for receiving a filament fabric 1000 during the cutting process, wherein several filament cuts 1171 are aligned according to a predetermined arrangement, an insertion unit 1600 for receiving several filament cuts 1171 and a control system for controlling the movement of the insertion unit 1600 relative to a substrate 210 in order to enable the transfer of the filament cuts 271a, 271b, 271c onto the substrate 210. [10] A filament fabric 1000 comprising: - several dense sections of filament fabric 1020, in which a multitude of warp threads 1071 and weft threads 1021 form a dense filament fabric 1000, which are separated from each other by a loosely woven section of filament fabric 1070, which consists of sections of the multitude of warp threads 1071 that are free of weft threads 1021

Images