METHOD AND ARRANGEMENT FOR ESTABLISHING A PERMANENT CONNECTION BETWEEN TWO CONNECTION PARTNERS

By applying differential pressure to create a bonding layer with varying porosities between joining partners, the method addresses uneven heating and mechanical fatigue in semiconductor modules, improving their durability and performance.

DE102025100009B3Active Publication Date: 2026-05-28INFINEON TECHNOLOGIES AG
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Patent Information

Application Number
DE102025100009
Authority / Receiving Office
DE · DE
Patent Type
Patents
Current Assignee / Owner
Filing Date
2025-01-02
Publication Date
2026-05-28
Estimated Expiration
2045-01-02

AI Technical Summary

Technical Problem

Semiconductor module assemblies face issues with uneven heating and mechanical fatigue of the sintered interconnect layer due to cyclic heating and cooling, leading to potential damage and reduced lifespan.

Method used

A method involving the application of a pre-layer between two joining partners, followed by differential pressure application to create a bonding layer with varying porosities, forming a stable and reliable permanent connection.

Benefits of technology

The method ensures a stable and reliable connection by mitigating uneven heating and mechanical fatigue, enhancing the longevity and performance of semiconductor modules.

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Abstract

A method comprises applying a pre-layer (64) to a first junction partner (10) or to a second junction partner (80), arranging the first junction partner (10) on the second junction partner (80) such that the pre-layer (64) is arranged between the first junction partner (10) and the second junction partner (80), heating the first junction partner (10), the second junction partner (80) and the pre-layer (64) arranged between the first junction partner (10) and the second junction partner (80), and, while heating the first junction partner (10), the second junction partner (80) and the pre-layer (64), exerting pressure on the first junction partner (10), thereby pressing the first junction partner (10) towards the second junction partner (80) and forming a permanent junction layer (62) between the first junction partner (10) and the second junction partner (80).wherein applying pressure to the first joining partner (10) comprises applying a first pressure (P1) to at least one first section of the first joining partner (10) and applying a second pressure (P2) to at least one second section of the first joining partner (10), wherein the second pressure (P2) is greater than the first pressure (P1) and the resulting permanent joining layer (62) has a first porosity in areas located below the at least one first section of the first joining partner (10) and a second porosity in areas located below the at least one second section of the first joining partner (10), wherein the second porosity is less than the first porosity.
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Citation Information

Patent Citations

  • Semiconductor component and method for manufacturing semiconductor component

    EP2884527A2

  • Methods and apparatuses for high temperature bonding and bonded substrates having variable porosity distribution formed therefrom

    US20170263586A1

  • Apparatus and method for processing a semiconductor device

    US20190080939A1