Semiconductor device with a sensor diode structure

Abstract

A semiconductor device (100) is proposed. The semiconductor device (100) comprises a silicon carbide (SiC) semiconductor substrate (102) with a transistor cell region (1021) and a sensor region (1022) on a first surface (1025) of the SiC semiconductor substrate (102). The semiconductor device (100) further comprises a gate groove (104) in the transistor cell region (1021). A gate dielectric (106) and a gate electrode (108) are arranged in the gate groove (104). The semiconductor device (100) further comprises a sensor groove (110) in the sensor region (1022). A sensor groove dielectric (112) is arranged on a bottom surface of the sensor groove (110). The semiconductor device (100) further comprises a sensor diode structure (113) on the sensor trench dielectric (112). A thickness (t1) of the sensor trench dielectric (112) is greater than a thickness (t2) of the gate dielectric (106).A vertical distance (d1) from a bottom of the sensor trench (110) to the first surface (1025) is equal to or greater than a vertical distance (d2) from a bottom of the gate trench (104) to the first surface (1025).

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