Method for controlling the surface temperature of a shielding plate arranged in the process chamber of a CVD reactor

Abstract

The invention relates to a method and a device for depositing a layer on a substrate (1) in a process chamber (2) of a CVD reactor (3), wherein a first reactive gas (19, 20) together with a first carrier gas (18) is fed into a first gas distribution chamber (5) flow-connected to the process chamber (2), wherein a second reactive gas (19, 20) together with a second carrier gas (18) is fed into a second gas distribution chamber (6) flow-connected to the process chamber (2), wherein a subset of the gas flowing from the second gas distribution chamber (5) flows through a heat transfer zone arranged between a gas outlet surface of the gas inlet element and a screen plate (8) that bounds the process chamber (2) upwards, wherein the second reactive gas (19, 20) and the second carrier gas (18) have different thermal conductivity properties, wherein the mass flow ratio between the second reactive gas (19,20) and the second carrier gas (18) a predetermined temperature of the screen plate (8) is set.

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