Method for manufacturing a semiconductor device and semiconductor device

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By structuring a second protective film to expose specific areas and etching the first film post-processing, the semiconductor manufacturing process is simplified, reducing costs and time without compromising protection.

DE102025136140A1Pending Publication Date: 2026-06-11MITSUBISHI ELECTRIC CORP

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Patent Information

Authority / Receiving Office: DE · DE
Patent Type: Applications
Current Assignee / Owner: MITSUBISHI ELECTRIC CORP
Filing Date: 2025-09-09
Publication Date: 2026-06-11

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Abstract

A method for manufacturing a semiconductor device according to the present disclosure comprises: forming an electrode on a major surface of a semiconductor substrate having the major surface and a rear surface opposite the major surface; forming a first protective film on the electrode and the semiconductor substrate; forming a second protective film on the first protective film; structuring a sub-region of the second protective film formed directly above an exposed sub-region comprising a sub-region of the electrode or a sub-region of the semiconductor substrate, in order to partially expose a sub-region formed directly above the exposed sub-region of the first protective film from the second protective film; machining the rear surface of the semiconductor substrate;and removal of the structured portion of the second protective film together with the portion of the first protective film formed directly above the exposed portion, in order to expose the exposed portion.

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Description

Background area

[0001] The present disclosure relates to a method for manufacturing a semiconductor device and a semiconductor device. background

[0002] JP 2005-26428 A discloses a method for manufacturing a semiconductor device. In this manufacturing process, a surface structure of a semiconductor device is created on the surface of a semiconductor wafer, and the surface of the semiconductor wafer, except for areas of the surface structure where wires are fixed during assembly, is covered with a protective film. Next, the back surface of the semiconductor wafer, which is covered with the protective film, is ground. An adhesive tape is applied to the surface of the semiconductor wafer during the grinding process.

[0003] In JP 2005-26428 A, the back surface of the semiconductor substrate is ground to achieve a desired thickness. In this case, it is necessary to cover the surface of the semiconductor substrate with a protective film, such as adhesive tape, to prevent scratching during the grinding process. This protective film is removed after the back surface machining of the semiconductor substrate is complete. There is a need to simplify the process for forming and removing such a protective film to reduce material costs and manufacturing time. Summary

[0004] The present disclosure was created to solve the problems mentioned above and aims to provide a semiconductor device and a method for its manufacture that can simplify the manufacturing process.

[0005] The features and advantages of the present disclosure can be summarized as follows.

[0006] According to one aspect of the present disclosure, a method for manufacturing a semiconductor device comprises: forming an electrode on a major surface of a semiconductor substrate, the substrate having the major surface and a rear surface opposite the major surface; forming a first protective film on the electrode and the semiconductor substrate; forming a second protective film on the first protective film; structuring a portion of the second protective film formed directly above an exposed portion comprising a portion of the electrode or a portion of the semiconductor substrate, in order to expose a portion of the first protective film formed directly above the exposed portion from the second protective film; after structuring the second protective film, machining the rear surface of the semiconductor substrate;and after processing the back surface of the semiconductor substrate, removing the structured portion of the second protective film together with the portion of the first protective film that is formed directly above the exposed portion in order to expose the exposed portion from the first and second protective films.

[0007] According to one aspect of the present disclosure, a semiconductor device comprises: a semiconductor substrate having a main surface and a rear surface opposite the main surface; an electrode formed on the main surface of the semiconductor substrate; a first protective film formed on the electrode and the semiconductor substrate; and a second protective film formed on the first protective film; wherein an exposed portion is formed in a portion of the electrode or a portion of the semiconductor substrate, the exposed portion being exposed by the first protective film and the second protective film, and a cavity is formed between the exposed portion and an end of the second protective film adjacent to the exposed portion.

[0008] Other and further aims, features and benefits of the revelation are shown more comprehensively in the following description. Brief description of the drawings Fig. 1, Fig. 2 to Fig. Figure 3 are diagrams illustrating a method for manufacturing a semiconductor device according to embodiment 1. Fig. Figure 4 is a cross-sectional view of the semiconductor device according to embodiment 1. Fig. Figure 5 is a top view of the semiconductor device according to embodiment 1. Fig. Figure 6 is a flowchart illustrating the process for manufacturing the semiconductor device according to embodiment 1. Fig. 7 and Fig. Figure 8 shows enlarged views of the semiconductor device according to embodiment 1. Fig. 9 and Fig. Figure 10 are diagrams illustrating a method for manufacturing a semiconductor device according to a comparative example. Fig. 11 and Fig. Figure 12 shows enlarged views of the semiconductor device according to the comparison example. Fig. 13 and Fig. Figure 14 are diagrams that illustrate examples of structuring sub-areas of a second protective film according to embodiment 2. Fig. Figure 15 is a diagram illustrating a method for manufacturing a semiconductor device according to embodiment 3. Fig. Figure 16 is a cross-sectional view of the semiconductor device according to embodiment 3. Fig. 17 and Fig. Figure 18 shows diagrams illustrating a method for manufacturing a semiconductor device of embodiment 4. Fig. Figure 19 is a cross-sectional view of the semiconductor device according to embodiment 4. Fig. Figure 20 is a flowchart illustrating the procedure for manufacturing the semiconductor device according to embodiment 4. Fig. 21 and Fig. Figures 22 are enlarged views of the semiconductor device according to embodiment 4. Description of the embodiments

[0009] A semiconductor device and a method for its fabrication according to each embodiment are described with reference to the drawings. The same or corresponding components are assigned the same symbols, and repeated descriptions may be omitted. Design 1

[0010] Fig. Figures 1-3 are diagrams illustrating a method for manufacturing a semiconductor device 100 according to embodiment 1. Fig. Figure 4 is a cross-sectional view of the semiconductor device 100 according to embodiment 1. Fig. Figure 5 is a top view of the semiconductor device 100 according to embodiment 1. Fig. Figure 6 is a flowchart illustrating the method for manufacturing the semiconductor device 100 according to embodiment 1. The method for manufacturing the semiconductor device 100 according to the present embodiment is described with reference to Fig. 1 - 6 described.

[0011] As in Fig. As shown in Figure 1, electrodes 12, 14, and 15 are first formed on a main surface of a semiconductor substrate 10, which has the main surface and a back surface opposite the main surface (Step 1). For example, electrode 12 is a gate electrode, electrode 14 is a source electrode, and electrode 15 is a drain electrode. Various semiconductor layers are formed on the semiconductor substrate 10 beforehand. Next, a first protective film 20 is formed on the electrodes 12, 14, 15, and the semiconductor substrate 10 (Step 2). The first protective film 20 is, for example, a silicon oxide film or a silicon nitride film.

[0012] Next, a second protective film 30 is formed on top of the first protective film 20 (step 3). The second protective film 30 is, for example, a polyimide film or a polybenzoxazole (PBO) film. As in Fig. 2 and Fig. As shown in 3, the next step is to structure a sub-area of the second protective film 30 in order to form structured sub-areas 32 and 34 (step 4). In the Fig. 2 and Fig. Figure 3 is a cross-sectional view or a top view, which represents a state in which a sub-area of the second protective film 30 has been structured.

[0013] The portion of the upper surface of the electrode 12 that is ultimately exposed by the first protective film 20 and the second protective film 30 is referred to as the exposed portion 16. In other words, the exposed portion 16 is a portion of the electrode 12. The exposed portion 16 is a portion to which wiring is bonded, for example, during product assembly. Furthermore, a portion of the main surface of the semiconductor substrate 10 that is ultimately exposed by the first protective film 20 and the second protective film 30 is referred to as the exposed portion 18. The exposed portion 18 is formed at the chip end region of the semiconductor substrate 10. The exposed portions 18 correspond to sectioning lines in a sectioning process for cutting semiconductor chips from a wafer.In this embodiment, an example is described in which both exposed partial regions 16 and 18 are formed; however, it is sufficient that an exposed partial region is formed at least on partial regions of the electrodes 12, 14 and 15 or on a partial region of the semiconductor substrate 10.

[0014] In step 4, the sections of the second protective film 30 formed directly above the exposed sub-areas 16 and 18 are structured in order to partially expose the sections of the first protective film 20 formed directly above the exposed sub-areas 16 and 18 from the second protective film 30. That is, the structured sub-areas 32 and 34 are formed directly above the exposed sub-areas 16 and 18, respectively. The structured sub-areas 32 and 34 are designed to have a structure and dimensions that ensure the surface protection function described in step 5 and also allow the second protective film 30 to be lifted in step 6.

[0015] After structuring the second protective film 30 (step 4), the next step is to process the back surface of the semiconductor substrate 10 (step 5). The back surface of the semiconductor substrate 10 is processed without applying a protective tape to the second protective film 30. That is, the back surface of the semiconductor substrate 10 is processed while the main surface of the semiconductor substrate 10 is protected by the second protective film 30, which is a polyimide film or the like. The processing of the back surface is carried out by flipping the wafer. This processing might involve, for example, grinding the semiconductor substrate 10. It could also include forming a semiconductor layer on the back surface, forming an electrode on the back surface, and the like.

[0016] Next, after processing the back surface of the semiconductor substrate 10, the structured sub-regions 32, 34 of the second protective film 30, together with the sub-regions of the first protective film 20 formed directly above the exposed sub-regions 16, 18, are removed (step 6). Specifically, the first protective film 20 is wet-etched using the second protective film 30 as a mask. The etching chemical is one that reacts with the first protective film 20 but not with the second protective film 30. For example, if the first protective film 20 consists of SiO₂, hydrogen fluoride can be used as the chemical solution. If the first protective film 20 consists of SiN, phosphoric acid (H₃PO₄) can be used as the chemical solution. As a result, the sub-regions of the first protective film 20 directly below the structured sub-regions 32 and 34 are removed.Furthermore, the sub-areas of the first protective film 20, with the exception of those directly under the structured sub-areas 32 and 34, are completely covered by the second protective film 30 and are therefore not etched.

[0017] At this time, the structured sub-areas 32 and 34 of the second protective film 30 are also removed, along with the first protective film 20 directly beneath them. That is, the structured sub-areas 32 and 34 of the second protective film 30 are lifted off. This allows the exposed sub-areas 16 and 18 of the first protective film 20 and the second protective film 30 to be exposed, as shown in Fig. 4 and Fig. 5 is shown.

[0018] Fig. 7 and Fig. Figure 8 shows enlarged views of the semiconductor device 100 according to embodiment 1. Fig. Figure 7 is an enlarged view of the end of the exposed sub-area 16, and Fig. Figure 8 is an enlarged view of the end of the exposed portion 18. In step 6, the first protective film 20 is etched over. This creates a cavity 22 between the exposed portion 16 and the end of the second protective film 30 adjacent to the exposed portion 16. The same applies to the exposed portion 18. In other words, the end of the first protective film 20 is recessed or hollowed out relative to the end of the second protective film 30. The height of the cavity 22 is approximately equal to the thickness of the first protective film 20. In this embodiment, the end faces of the first protective film 20 adjacent to the exposed portions 16 and 18 are free of the second protective film 30. The depth of the cavity 22 can be controlled by structuring the second protective film 30. Although the cavity 22 is essentially created by over-etching, it is possible to create a structure without the cavity 22.

[0019] Fig. 9 and Fig. Figure 10 are diagrams illustrating a method for manufacturing a semiconductor device 800 according to a comparative example. Fig. Figure 9 represents the state before the back surface is processed. The comparative example differs from the present embodiment in that the exposed partial areas 16 and 18 are free of the first protective film 20 and the second protective film 30 before the back surface is processed. By covering the electrodes 14 and 15 around the electrode 12 with a protective film, it becomes possible to protect the semiconductor device 800 and maintain its withstand voltage.

[0020] Next, the back surface of the semiconductor substrate 10 is ground to achieve the desired thickness. At this time, the surface of the semiconductor substrate 10 must be covered with a protective film to prevent scratching during grinding. The second protective film 30 has openings formed within it for bonding or similar applications. Therefore, the second protective film 30 in the comparative example does not serve to protect the front surface during machining of the back surface. As in Fig. As shown in Figure 10, a protective band 840 is therefore applied. After the processing of the back surface, which includes grinding, is completed, the protective band 840 is removed. This requires a process to form the protective band 840 and a process to remove the protective band 840, which can increase material costs and manufacturing time.

[0021] Fig. 11 and Fig. Figure 12 shows enlarged views of a semiconductor device 800 according to a comparative example. Fig. Figure 11 is an enlarged view of the end of the exposed sub-area 16, and Fig. Figure 12 is an enlarged view of the end of the exposed portion 18. In the comparative example, after removal of the first protective film 20, the second protective film 30 forms directly above the exposed portions 16 and 18, and then the second protective film is removed directly above the exposed portions 16 and 18. In this case, the first protective film 20 is not exposed. Furthermore, the cavity 22 caused by over-etching does not occur as in this embodiment.

[0022] The effects of this embodiment are described next. In this embodiment, the back surface is processed in a state where the structured sub-regions 32 and 34 are formed in the second protective film 30. At this time, the back surface of the semiconductor substrate 10 can be processed while the main surface of the semiconductor substrate 10 is protected by the second protective film 30. By providing the second protective film 30 to protect the wafer surface, the conventional processes for forming and removing a protective film can be eliminated. Therefore, the manufacturing process can be simplified, and material costs and manufacturing time can be reduced.

[0023] As a modification of this embodiment, the structure of the semiconductor substrate 10 itself, the number of electrodes, the material of the electrode protection film, etc., can be suitably changed. Furthermore, the semiconductor substrate 10 can, for example, be a silicon substrate and can be made with a wide-bandgap semiconductor. The wide-bandgap semiconductor is, for example, silicon carbide, a gallium nitride-based material, or diamond.

[0024] The modifications mentioned above can be suitably applied to the methods for manufacturing a semiconductor device and the semiconductor devices according to the following embodiment. The semiconductor device and the method for manufacturing it according to the following embodiment have much in common with embodiment 1, so the following description will focus on the differences compared to embodiment 1. Design 2

[0025] Fig. 13 and Fig. Figure 14 are diagrams illustrating examples of the structured sub-area 32 of the second protective film 30 according to embodiment 2. The structured sub-area 32 must be designed such that the second protective film 30 can protect the front surface of the semiconductor substrate 10 when the rear surface of the semiconductor substrate 10 is processed. Furthermore, the structured sub-area 32 must be designed such that it is completely removed during peeling, allowing the chemical solution to reach the underlying first protective film 20. Therefore, the structured sub-area 32 must be designed such that the sub-area of the second protective film 30 formed directly above the exposed sub-area 16 is partially open.

[0026] Specifically, from the perspective of protecting the surface of the semiconductor substrate 10, it is preferable that the area of the first protective film 20 covered by the structured sub-area 32 be of a certain size. From the perspective of delamination, it is preferable that the area of the first protective film 20 covered by the structured sub-area 32 be small. It is preferable, for example, that 10% or more of the area of the first protective film 20 directly above the exposed sub-area 16 is covered by the second protective film 30. It is preferable that approximately 50%, specifically 40% to 60%, of the area of the first protective film 20 directly above the exposed sub-area 16 is covered by the second protective film 30.

[0027] From the above perspectives, it is preferable to structure the second protective film 30 in a mesh, net, grid, dot, island, or stripe pattern. In the example of Fig. 13, the second protective film 30 is structured in a point or island shape. Can one also say that the second protective film 30 is columnar? In the example of Fig. 14 is the second protective film 30 structured in a net or grid form. In the example of Fig. 14. It can be said that the linear second protective films 30 are designed such that they intersect. In this way, the structured sub-area 32 is formed, for example, by a regular arrangement of the second protective film 30. Although the structuring sub-area 32 has been described here as an example, a similar pattern or structure can also be used for the structuring sub-area 34. embodiment 3

[0028] Fig. Figure 15 is a diagram illustrating a method for manufacturing a semiconductor device according to embodiment 3. Fig. Figure 15 represents a state in which the structured sub-area 32 is formed on the second protective film 30. The first protective film 20 has sub-areas 20a and other sub-areas 20b formed directly above the exposed sub-areas 16 and 18, which consist of different materials. The remaining configuration is the same as that of embodiment 1. For example, sub-area 20a of the first protective film 20, formed directly above the exposed sub-areas 16 and 18, is a silicon oxide film, and sub-area 20b is a silicon nitride film.

[0029] During the formation of the first protective film 20, a SiN film is initially formed, and then the portions of the SiN film above the exposed areas 16 and 18 are removed. Afterwards, an SiO2 film is formed on the exposed areas 16 and 18.

[0030] Fig. Figure 16 is a cross-sectional view of a semiconductor device 200 according to embodiment 3. The etching process in step 6 removes the SiO2 sub-area, leaving the SiN sub-area 20b. SiN provides excellent protection for electrodes, while SiO2 is easily removed. Therefore, in this embodiment, the exposed sub-areas 16 and 18 can be formed with high accuracy, and the electrodes can be reliably protected. Design 4

[0031] Fig. 17 and Fig. Figure 18 are diagrams illustrating a method for manufacturing a semiconductor device 300 according to embodiment 4. Fig. Figure 19 is a cross-sectional view of the semiconductor device 300 according to embodiment 4. Fig. Figure 20 is a flowchart illustrating the method for manufacturing the semiconductor device 300 according to embodiment 4. Steps 1 and 2 are the same as steps 1 and 2 in embodiment 1. In this embodiment, as in Fig. As shown in Figure 17, openings 24 are formed in the first protective film 20 at positions adjacent to the areas formed directly above the exposed sub-areas 16, 18 (step 2a). In other words, the openings 24 are formed at the boundaries between the exposed sub-areas 16, 18 and the areas where the first protective film 20 is to remain. The openings 24 can be formed by etching.

[0032] Then the second protective film 30 is formed (step 3). As in Fig. As shown in Figure 18, when the second protective film 30 is formed, the openings 24 are filled with the second protective film 30. That is, in the opening 24, the second protective film 30 and the electrode 12 or the semiconductor substrate 10 are in direct contact with each other. Steps 4-6 are the same as steps 4-6 in embodiment 1. If the structured portion of the second protective film 30 and the portion of the first protective film 20 formed directly above the exposed portions 16, 18 are removed in step 6, the portion of the second protective film 30 that fills the openings 24 remains.

[0033] Fig. 21 and Fig. Figures 22 are enlarged views of a semiconductor device according to embodiment 4. Fig. Figure 21 is an enlarged view of the end of the exposed sub-area 16, and Fig.Figure 22 is an enlarged view of the end of the exposed portion 18. As in embodiment 1, the first protective film 20 is etched over in step 6. Therefore, a cavity 22 is formed between the end of the second protective film 30 adjacent to the exposed portion 16 and the exposed portion 16. The same applies to the exposed portion 18. Furthermore, the end faces of the first protective film 20 adjacent to the exposed portions 16 and 18 are covered with a second protective film 30. The portion of the second protective film 30 that covers the end face of the first protective film 20 corresponds to the portion of the second protective film 30 that fills the opening 24.

[0034] In this embodiment, since the opening 24 is filled with the second protective film 30, over-etching of the first protective film 20 during lifting can be suppressed. In other words, etching of the first protective film 20 by the portion of the second protective film 30 that fills the opening 24 can be stopped. Therefore, the free floating of the second protective film 30 can be reduced. Furthermore, the shape of the end of the second protective film 30 can be controlled, and exposure of the first protective film 20 can be prevented.

[0035] Various aspects of the present revelation are summarized below as appendices. (Appendix 1)

[0036] A method for manufacturing a semiconductor device, wherein the method comprises: Forming an electrode on a main surface of a semiconductor substrate, which has the main surface and a back surface opposite the main surface; Formation of an initial protective film on the electrode and the semiconductor substrate; Formation of a second protective film on top of the first protective film; Structuring a sub-area of the second protective film formed directly above an exposed sub-area comprising a sub-area of the electrode or a sub-area of the semiconductor substrate, in order to expose a sub-area of the first protective film formed directly above the exposed sub-area from the second protective film; after structuring the second protective film, processing the back surface of the semiconductor substrate; and After processing the back surface of the semiconductor substrate, the structured portion of the second protective film is removed together with the portion of the first protective film formed directly above the exposed portion, in order to expose the exposed portion from the first and second protective films. (Appendix 2)

[0037] The method for manufacturing the semiconductor device according to Annex 1, wherein the processing of the back surface is carried out without applying a protective tape to the second protective film. (Appendix 3)

[0038] The method for manufacturing the semiconductor device according to Annex 1 or 2, wherein the exposed portion comprises the portion of the electrode. (Appendix 4)

[0039] The method for manufacturing the semiconductor device according to one of Annexes 1 to 3, wherein the exposed portion comprises a chip end portion of the semiconductor substrate. (Appendix 5)

[0040] The method for manufacturing the semiconductor device according to one of Annexes 1 to 4, wherein, during structuring, the second protective film is structured in a net, grid, dot, island or stripe form. (Appendix 6)

[0041] The method for manufacturing the semiconductor device according to one of Annexes 1 to 5, wherein the second protective film is a polyimide film or a polybenzoxazole film. (Appendix 7)

[0042] The method for manufacturing the semiconductor device according to one of Annexes 1 to 6, wherein the first protective film is a silicon oxide film or silicon nitride film. (Appendix 8)

[0043] The method for manufacturing the semiconductor device according to one of Annexes 1 to 7, wherein the first protective film has a different material between the sub-area formed directly above the exposed sub-area and the other sub-area. (Appendix 9)

[0044] The method for manufacturing the semiconductor device according to Annex 8, wherein the portion of the first protective film formed directly above the exposed portion is a silicon oxide film and the other portion of the first protective film is a silicon nitride film. (Appendix 10)

[0045] The method for manufacturing the semiconductor device according to one of Annexes 1 to 9, further comprising forming an opening in the first protective film at a position adjacent to the part of the first protective film formed directly above the exposed part, wherein After the opening has been formed, the formation of the second protective film is carried out. (Appendix 11)

[0046] The method for manufacturing the semiconductor device according to Annex 10, wherein, during the formation of the second protective film, the opening is filled with the second protective film and When the structured part of the second protective film and the part of the first protective film formed directly above the exposed part are removed, the part of the second protective film that fills the opening remains. (Appendix 12)

[0047] A semiconductor device comprising: a semiconductor substrate having a main surface and a back surface opposite the main surface; an electrode that is formed on the main surface of the semiconductor substrate; a first protective film that forms on the electrode and the semiconductor substrate; and a second protective film formed on top of the first protective film; wherein an exposed sub-area is formed in a sub-area of the electrode or a sub-area of the semiconductor substrate, wherein the exposed sub-area is exposed from the first protective film and the second protective film, and a cavity is formed between the exposed area and an end of the second protective film adjacent to the exposed area. (Appendix 13)

[0048] The semiconductor device according to Annex 12, wherein an end face of the first protective film adjacent to the exposed portion is exposed from the second protective film. (Appendix 14)

[0049] The semiconductor device according to Annex 12, wherein an end face of the first protective film adjacent to the exposed portion is covered with the second protective film. (Appendix 15)

[0050] The semiconductor device according to one of Annexes 12 to 14, wherein the semiconductor substrate is created with a wide bandgap semiconductor. (Appendix 16)

[0051] The semiconductor device according to Annex 15, wherein the wide bandgap semiconductor is silicon carbide, a gallium nitride-based material or diamond.

[0052] In the method for manufacturing a semiconductor device according to the present disclosure, the portion of the second protective film formed directly above the exposed area is structured such that the portion of the first protective film formed directly above the exposed area is partially exposed by the second protective film. By machining the back surface in this state, the back surface can be machined while the main surface of the semiconductor substrate is protected by the second protective film. Therefore, there is no need to apply a protective tape, and the manufacturing process can be simplified.

[0053] The semiconductor device according to the present disclosure can be manufactured by the simplified manufacturing process described above.

[0054] Obviously, in light of the above teachings, many modifications and variations of the present disclosure are possible. It is therefore understood that, within the scope of the attached claims, the disclosure can be implemented in practice in a manner other than specifically described.

[0055] The entire disclosure of Japanese patent application No. 2024-213282, filed on December 6, 2024, including description, claims, drawings and abstract, on which the priority of the present application is based according to the Convention, is incorporated herein by reference in its entirety. QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] JP 2005-26428 A [0002, 0003] JP 2024-213282

[0055]

Claims

[1] Method for manufacturing a semiconductor device (100, 200, 300), wherein the method comprises: Forming an electrode (12, 14, 15) on a main surface of a semiconductor substrate (10) having the main surface and a back surface opposite the main surface; Formation of a first protective film (20) on the electrode (12, 14, 15) and the semiconductor substrate (10); Formation of a second protective film (30) on the first protective film (20); Structuring a sub-area (32, 34) of the second protective film (30) formed directly above an exposed sub-area (16, 18) comprising a sub-area of the electrode (12, 14, 15) or a sub-area of the semiconductor substrate (10) in order to expose a sub-area of the first protective film (20) formed directly above the exposed sub-area (16, 18) from the second protective film (30); after structuring the second protective film (30), processing the back surface of the semiconductor substrate (10); and After processing the back surface of the semiconductor substrate (10), the structured sub-area (32, 34) of the second protective film (30) is removed together with the sub-area of the first protective film (20) formed directly above the exposed sub-area (16, 18) in order to expose the exposed sub-area (16, 18) from the first protective film (20) and the second protective film (30). [2] Method for manufacturing the semiconductor device (100, 200, 300) according to claim 1, wherein the processing of the rear surface is carried out without applying a protective tape to the second protective film (30). [3] Method for manufacturing the semiconductor device (100, 200, 300) according to claim 1 or 2, wherein the exposed portion (16) comprises the portion of the electrode (12, 14, 15). [4] Method for manufacturing the semiconductor device (100, 200, 300) according to any one of claims 1 to 3, wherein the exposed portion (18) comprises a chip end portion of the semiconductor substrate (10). [5] Method for manufacturing the semiconductor device (100, 200, 300) according to any one of claims 1 to 4, wherein during structuring the second protective film (30) is structured in a net, grid, dot, island or strip shape. [6] Method for manufacturing the semiconductor device (100, 200, 300) according to any one of claims 1 to 5, wherein the second protective film (30) is a polyimide film or a polybenzoxazole film. [7] Method for manufacturing the semiconductor device (100, 200, 300) according to any one of claims 1 to 6, wherein the first protective film (20) is a silicon oxide film or silicon nitride film. [8] Method for manufacturing the semiconductor device (200) according to any one of claims 1 to 7, wherein the first protective film (20) has a different material between the part (20a) formed directly above the exposed part (16, 18) and the other part (20b). [9] Method for producing the semiconductor device (200) according to claim 8, wherein the part (20a) of the first protective film (20) formed directly above the exposed part (16, 18) is a silicon oxide film and the other part (20b) of the first protective film (20) is a silicon nitride film. [10] Method for manufacturing the semiconductor device (300) according to any one of claims 1 to 9, further comprising forming an opening (24) in the first protective film (20) at a position adjacent to the part of the first protective film (20) formed directly above the exposed part (16, 18), wherein after forming the opening (24) the formation of the second protective film (30) is carried out. [11] Method for producing the semiconductor device (300) according to claim 10, wherein when forming the second protective film (30) the opening (24) is filled with the second protective film (30) and when removing the structured part (32, 34) of the second protective film (30) and the part formed directly above the exposed part (16, 18) of the first protective film (20) the part of the second protective film (30) which fills the opening (24) remains. [12] Semiconductor device (100, 200, 300), comprising: a semiconductor substrate (10) having a main surface and a back surface opposite the main surface; an electrode (12, 14, 15) formed on the main surface of the semiconductor substrate (10); a first protective film (20) formed on the electrode (12, 14, 15) and the semiconductor substrate (10); and a second protective film (30) formed on top of the first protective film (20); wherein an exposed partial area (16, 18) is formed in a partial area of the electrode (12, 14, 15) or a partial area of the semiconductor substrate (10), wherein the exposed partial area (16, 18) is exposed from the first protective film (20) and the second protective film (30), and a cavity (22) is formed between the exposed part (16, 18) and an end of the second protective film (30) adjacent to the exposed part (16, 18). [13] Semiconductor device (100, 200) according to claim 12, wherein an end surface of the first protective film (20) adjacent to the exposed partial area (16, 18) is exposed from the second protective film (30). [14] Semiconductor device (300) according to claim 12, wherein an end surface of the first protective film (20) adjacent to the exposed partial area (16, 18) is covered with the second protective film (30). [15] Semiconductor device (100, 200, 300) according to any one of claims 12 to 14, wherein the semiconductor substrate (10) is created with a wide bandgap semiconductor. [16] Semiconductor device (100, 200, 300) according to claim 15, wherein the wide bandgap semiconductor is silicon carbide, a gallium nitride-based material or diamond.