Semiconductor device and method for manufacturing a semiconductor device
DE102025149776A1Undetermined Publication Date: 2026-07-23MITSUBISHI ELECTRIC CORP
Patent Information
- Application Number
- DE102025149776
- Authority / Receiving Office
- DE · DE
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-01-21
- Filing Date
- 2025-12-01
- Publication Date
- 2026-07-23
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Abstract
A semiconductor substrate comprises a drift layer, a first semiconductor layer, and a second semiconductor layer located between the drift layer and a second electrode. The second semiconductor layer is located on the side of the second electrode of the first semiconductor layer. One of the first and second semiconductor layers exhibits point defects, while the other does not. The maximum oxygen concentration of the semiconductor substrate, max([Oi]), and the impurity concentration of a first conductivity type in the drift layer, Cdrift, exhibit a predetermined ratio.
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Citation Information
Patent Citations
Semiconductor device and manufacturing method of the semiconductor device
JP2023179647A
JP002023179647A