LED assembly

Abstract

A light-emitting diode (LED) assembly is created. The LED assembly contains an LED chip, a wavelength conversion layer, a dielectric layer, a distributed Bragg reflector layer, a conductive component, and a reflective layer. The LED chip has a light-emitting surface and several side faces. The wavelength conversion layer is located on the light-emitting surface of the LED chip and has several side faces. The dielectric layer covers the side faces of the LED chip. The distributed Bragg reflector layer is located beneath the LED chip. The conductive component is located beneath the distributed Bragg reflector layer and is electrically connected to the LED chip through the distributed Bragg reflector layer. The reflective layer is located on the side faces of the wavelength conversion layer.

Description

[0001] This application claims priority over Taiwanese patent application No. 113147105, filed on December 15, 2024. TECHNICAL AREA

[0002] The present disclosure relates to a light-emitting diode assembly and in particular to a light-emitting diode assembly containing a reflective layer. BACKGROUND

[0003] Light-emitting devices generally contain several light-emitting elements arranged in various configurations. However, a light-emitting element can be excited by a neighboring light-emitting element, leading to cross-coupling among the light-emitting elements.

[0004] Accordingly, it is difficult to control the emission from the desired light-emitting element in a light-emitting device. Furthermore, the light-emitting elements may also exhibit problems with light leakage caused by excessive side emission. SUMMARY

[0005] The present disclosure provides a light-emitting diode (LED) assembly comprising an LED chip, a wavelength conversion layer, a dielectric layer, a distributed Bragg reflector layer, a conductive component, and a reflective layer. The LED chip includes a light-emitting surface and several side faces. The wavelength conversion layer is arranged on the light-emitting surface of the LED chip and includes several side faces. The dielectric layer covers the side faces of the LED chip. The distributed Bragg reflector layer is arranged beneath the LED chip. The conductive component is arranged beneath the distributed Bragg reflector layer and is electrically connected to the LED chip through the distributed Bragg reflector layer. The reflective layer is arranged on the sides of the wavelength conversion layer.

[0006] The light-emitting diode assembly of the present disclosure can be applied to a variety of electronic devices. For the sake of clarity regarding the features and advantages of the present disclosure, some embodiments are described in detail below with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] The embodiments of the present disclosure can be more fully understood with reference to the following detailed description in conjunction with the accompanying drawings. It should be noted that the drawings are not necessarily to scale and that the dimensions of some features may be exaggerated or reduced for the sake of clarity. Fig. Figure 1 is a schematic cross-sectional view of a light-emitting diode assembly according to some embodiments of the present disclosure; Fig. 2, Fig. 3, Fig. 4, Fig. 5, Fig. 6, Fig. 7, Fig. 8, Fig. 9, Fig. 10, Fig. 11, Fig. 12, Fig. 13, Fig. 14, Fig. 15, Fig. 16, Fig. 17, Fig. 18 to Fig. Figure 19 are schematic cross-sectional views of a light-emitting diode assembly in various stages of a formation process according to some embodiments of the present disclosure; Fig. Figure 20 is a schematic cross-sectional view of a light-emitting diode assembly according to some embodiments of the present disclosure; Fig. 21 is a schematic cross-sectional view of a light-emitting diode assembly according to some embodiments of the present disclosure; Fig. Figure 22 is a schematic cross-sectional view of a light-emitting diode assembly according to some embodiments of the present disclosure; Fig. Figure 23 is a schematic cross-sectional view of a light-emitting diode assembly according to some embodiments of the present disclosure. DETAILED DESCRIPTION

[0008] The following provides a detailed description of the assembly structures of various embodiments of the present disclosure. It should be noted that numerous different embodiments are described here to illustrate various aspects of the present disclosure. The described specific components and arrangements are provided solely for the purpose of clearly illustrating some embodiments of the present disclosure and are not intended to limit the scope of the present disclosure. In different embodiments, similar and / or corresponding elements may be designated by similar and / or corresponding reference numerals for the sake of clarity.However, such similar and / or corresponding reference numerals are provided solely for a clear and concise description of certain embodiments of the present disclosure and are not intended to imply any substantial relationship between the various embodiments and / or structures described herein.

[0009] It should be noted that relative terms may be used in the embodiments of this disclosure, such as "lower(s)," "lowest(s)," "upper(s)," or "top(s)" to describe the relative relationship of one element to another in the drawings. It should further be understood that if the device illustrated in the drawings is reversed, an element described as being on the "lower" side may instead be located on the "upper" side. The embodiments of this disclosure are to be understood in conjunction with the drawings, which are considered to be an integral part of this disclosure.Furthermore, it is intended that references to a first element arranged "on" or "above" a second element, arrangements in which the first element is in direct contact with the second element, and arrangements in which one or more intermediate elements may be arranged between the first and second elements are included. However, if the first element is described as being directly on top of the second element, it is understood that the first element is in direct contact with the second element. It is also understood that terms of order such as "first(s)," "second(s)," and the like, when used in the application text and claims to modify an element, are not to be interpreted as indicating a temporal sequence of the element or the second element.The terms "elements" do not indicate or imply an order of one element relative to another, or a sequence in a manufacturing process. Instead, such ordering terminology is used solely to distinguish one element with a particular designation from another element with the same designation. It should also be understood that it is not necessary to use consistent terminology between the application text and the claims. For example, an element identified as a "first" element in the application text may be referred to as a "second" element in the claims.

[0010] As used here, the terms "approximately," "about," and "essentially" generally refer to being within 10%, 5%, 3%, 2%, 1%, or 0.5% of a given value or range. A value provided here is to be considered approximate, with the meaning of attributes such as "approximately," "about," or "essentially" being implied even in their absence. The phrase "within the range of a first value to a second value" or "from a first value to a second value" is intended to include the first value, the second value, and all values ​​in between. Furthermore, any two values ​​or directions used for comparison may be subject to a margin of error.When a first value is specified as equal to a second value, it should be understood that a permissible deviation of approximately 10%, 5%, 3%, 2%, 1%, or 0.5% between the first and second values ​​is implied. When a first direction is specified as perpendicular to a second direction, the angle between the first and second directions may be in the range of 80 degrees to 100 degrees. When a first direction is specified as parallel to a second direction, the angle between the first and second directions may be in the range of 0 degrees to 10 degrees.

[0011] In the present disclosure, the directions are not restricted to the three axes of a Cartesian coordinate system, such as the X-axis, Y-axis, and Z-axis, and can be interpreted in a broader sense. For example, the X-axis, Y-axis, and Z-axis can be perpendicular to each other or, without restriction, can represent different directions that are not perpendicular to each other. For descriptive purposes, the X-axis direction is referred to as a first direction (D1) (latitude direction), the Y-axis direction is referred to as a second direction D2 (longitudinal direction), and the Z-axis direction is referred to as a third direction D3 (thickness or depth direction). In some embodiments, a top-view diagram described herein represents a cross-sectional view viewed in the XY plane, and a cross-sectional diagram described herein represents a cross-sectional view viewed in the XZ plane.In some embodiments, the third direction D3 can correspond to the normal direction of a light-emitting element. In some embodiments, the phrase "a space between an element and another element" refers to a distance between a first boundary of one element and a second boundary of another element, the second boundary being the boundary closest to the first boundary.

[0012] With reference to Fig. Figure 1 illustrates a schematic cross-sectional view of a light-emitting diode assembly according to some embodiments of the present disclosure. As shown in Fig. As shown in Figure 1, a light-emitting diode assembly 1 comprises a light-emitting diode chip (LED chip) 13, a wavelength conversion layer 90, a dielectric layer 14, a distributed Bragg reflector (DBR) layer 16, several conductive components 70 and a reflective layer 32.

[0013] As in Fig. As shown in Figure 1, the light-emitting diode chip 13 in some embodiments comprises a light-emitting surface 13A, an electrode surface 13B, several side surfaces 13C, and two electrodes 130. The electrode surface 13B is opposite the light-emitting surface 13A, and the side surfaces 13C are arranged between the electrode surface 13B and the light-emitting surface 13A. In some embodiments, the light-emitting diode chip 13 does not have a growth substrate.

[0014] As in Fig. As shown in Figure 1, in some embodiments the wavelength conversion layer 90 is arranged on the light-emitting surface 13A of the LED chip 13. The wavelength conversion layer 90 comprises a top surface 90T and several side surfaces 90S. In some embodiments, a third adhesive layer 12C is inserted between the wavelength conversion layer 90 and the light-emitting surface 13A of the LED chip 13. In other words, the wavelength conversion layer 90 can be connected to the light-emitting surface 13A of the LED chip 13 by the third adhesive layer 12C.

[0015] As in Fig. As shown in Figure 1, in some embodiments the dielectric layer 14 covers the side surfaces 13C of the LED chip 13 and the dielectric layer 14 is arranged on the layer 16 with distributed Bragg reflector. In some embodiments the dielectric layer 14 surrounds the side surfaces 13C of the LED chip 13. In some embodiments the layer 16 with distributed Bragg reflector is arranged below the LED chip 13 and the electrode surface 13B of the LED chip 13 is in contact with the layer 16 with distributed Bragg reflector.

[0016] As in Fig. As shown in Figure 1, in some embodiments each of the conductive components 70 is arranged below the layer 16 with distributed Bragg reflector and extends through a corresponding section of the layer 16 with distributed Bragg reflector, such that it is electrically connected to the electrode 130 of the LED chip 13. The conductive component 70 can, for example, be a metal column.

[0017] As in Fig. As shown in Figure 1, in some embodiments the reflective layer 32 is arranged on the side surfaces 90S of the wavelength conversion layer 90. In some embodiments, the reflective layer 32 can have the shape of an L or an inverted L in a cross-sectional view.

[0018] As in Fig. As shown in Figure 1, the LED assembly 1 in some embodiments further comprises a protective layer 50 arranged on the reflective layer 32. In some embodiments, the protective layer 50 has an upper surface 50T, an inner surface 50I, a lower surface 50B, and an outer surface 50A. The reflective layer 32 is arranged on the lower surface 50B and the inner surface 50I of the protective layer 50, leaving the upper surface 50T and the outer surface 50A of the protective layer 50 exposed. The protective layer 50 can be used to protect the reflective layer 32 from damage caused by an external influence.

[0019] As in Fig. As shown in Figure 1, the light-emitting diode assembly 1 in some embodiments further comprises a filler material structure 40. The filler material structure 40 is arranged below the layer 16 with distributed Bragg reflector and surrounds the conductive components 70.

[0020] As in Fig. As shown in Figure 1, the LED assembly 1 further comprises several conductive contact surfaces 80. In some embodiments, each of the conductive contact surfaces 80 can be electrically connected to the corresponding conductive component 70. In some embodiments, the conductive contact surface 80 is made of a conductive material. In some embodiments, the conductive contact surface 80 can be electrically connected to an external circuit outside the LED assembly 1. Accordingly, an external current can be applied to the LED chip 13 via the conductive contact surface 80, the conductive component 70, and the electrode 130. In some embodiments, the LED assembly 1 has a cube shape or a cube-like shape.

[0021] With reference to Fig. 2, Fig. 3, Fig. 4, Fig. 5, Fig. 6, Fig. 7, Fig. 8, Fig. 9, Fig. 10, Fig. 11, Fig. 12, Fig. 13, Fig. 14, Fig. 15, Fig. 16, Fig. 17, Fig. 18 to Fig. Figure 19 illustrates schematic cross-sectional views of a light-emitting diode assembly 1 in various stages of a formation process according to some embodiments of the present disclosure.

[0022] As in Fig. As shown in Figure 2, a first substrate 10 is provided. In some embodiments, the first substrate 10 may be a compound from Groups III-V, such as gallium nitride (GaN), gallium arsenide (GaAs), gallium phosphide (GaP), aluminum gallium arsenide (AlGaAs), aluminum nitride (AlN), or aluminum gallium nitride (AlGaN); an element from Group IV or a compound from Group IV, such as silicon (Si), silicon carbide (SiC), or diamond (C); other suitable materials; or a combination thereof. However, the present disclosure is not limited to these. In some embodiments, the first substrate 10 may be or contain glass, quartz, sapphire, ceramic, other suitable materials, or a combination thereof. However, the present disclosure is not limited to these.In some embodiments, the first substrate 10 may be or may contain polyimide (PI), polycarbonate (PC), polyethylene terephthalate (PET), polypropylene (PP), other suitable materials, or a combination thereof. However, the present disclosure is not limited to these. In some embodiments, the first substrate 10 may be or may contain a flexible substrate, a bendable substrate, a rigid substrate, or a combination thereof. However, the present disclosure is not limited to these. For example, the first substrate 10 may be a sapphire substrate. In some embodiments, the first substrate 10 may be or may contain a transparent substrate, a translucent substrate, or an opaque substrate. However, the present disclosure is not limited to these.

[0023] As in Fig. As shown in Figure 2, following the steps above, a first release layer 11 is applied to the first substrate 10. In some embodiments, the first release layer 11 may be or may contain a laser-soluble adhesive, a UV-soluble adhesive, a heat-soluble adhesive, other suitable materials, or a combination thereof. However, the present disclosure is not limited to this. In some embodiments, the first release layer 11 completely covers an upper surface of the first substrate 10. However, the present disclosure is not limited to this. In other embodiments, the first release layer 11 may partially cover the upper surface of the first substrate 10. For example, the first release layer 11 may partially cover the upper surface of the first substrate 10 corresponding to a position where the light-emitting diode chip 13 is subsequently placed.

[0024] As in Fig. As shown in Figure 2, in some embodiments several LED chips 13 are arranged side by side on the first deposition layer 11 on the first substrate 10. It should be noted that, for the sake of clarity, only one LED chip 13 is shown on the first deposition layer 11 on the first substrate 10. Fig. Figure 2 is shown. In some embodiments, the light-emitting diode chip 13 can be or contain a thin-film flip-chip LED or a flip-chip LED. The term "thin-film flip-chip LED" refers to a light-emitting diode chip 13 from which a growth substrate has been removed. In other words, the light-emitting diode chip 13 has no growth substrate.

[0025] In some embodiments, the LED chips 13 are first arranged on an adhesive layer of a temporary substrate (not shown) by a laser transfer process or a similar process, and the adhesive layer is removed along with the temporary substrate, thereby transferring the LED chips 13 onto the first release layer 11. However, the present disclosure is not limited to this. In some embodiments, the LED chips 13 can be transferred onto the first release layer 11 by a pick-up process.

[0026] With reference to Fig. 2 In some embodiments, a first adhesive layer 12A can further be arranged between the LED chip 13 and the first release layer 11. In some embodiments, the first adhesive layer 12A can first be arranged on the first release layer 11, followed by bonding the LED chip 13 to the first adhesive layer 12A. Alternatively, in some embodiments, the first adhesive layer 12A can first be arranged on the LED chip 13, followed by transferring the LED chip 13 together with the first adhesive layer 12A onto the first release layer 11.

[0027] In some embodiments, the first adhesive layer 12A may be or contain polyimide (PI), polybenzoxazole (PBO), epoxy resin, transparent silicone, other suitable materials, or a combination thereof. However, the present disclosure is not limited thereto.

[0028] With reference to Fig. 2 Each of the light-emitting diode chips 13 contains a light-emitting surface 13A, an electrode surface 13B, and several side surfaces 13C. The electrode surface 13B is opposite the light-emitting surface 13A, and the side surfaces 13C are arranged between the electrode surface 13B and the light-emitting surface 13A. As used here, the electrode surface 13B refers to the surface of the light-emitting diode chip 13 on which the electrode 130 is located, and not to the surface of the electrode 130 itself. The light-emitting surface 13A is configured to produce light. As in Fig. As shown in Figure 2, the light-emitting surface 13A of the LED chip 13 faces the first substrate 10, while the electrode surface 13B faces away from the first substrate 10. In other words, the light-emitting surface 13A of the LED chip 13 faces the first adhesive layer 12A and is in contact with it.

[0029] As in Fig. As shown in Figure 3, following the steps above, the dielectric layer 14 is arranged on the side faces 13C of the LED chip 13. The dielectric layer 14 is in direct contact with the side faces 13C of the LED chip 13, exposing the electrodes 130 and the electrode surface 13B of the LED chip 13. That is, the dielectric layer 14 covers the side faces 13C of the LED chip 13. In some embodiments, the dielectric layer 14 surrounds the side faces 13C of the LED chip 13 continuously and without interruption. The dielectric layer 14 can be or may contain epoxy resin, polyimide (PI), polybenzoxazole (PBO), silicone, silicon dioxide, or silicon nitride. In some embodiments, the dielectric layer 14 can be an insulating dielectric material.

[0030] As in Fig. As shown in Figure 4, following the steps above, a layer 16 with a distributed Bragg reflector is arranged on the dielectric layer 14, the electrode surface 13B, and the electrodes 130, with a section of the surfaces of the electrodes 130 exposed. In some embodiments, the layer 16 with the distributed Bragg reflector can be structured such that multiple openings are formed in it to expose a section of the surfaces of the electrodes 130. The multiple openings serve to accommodate the conductive components. In some embodiments, the layer 16 with the distributed Bragg reflector contains a stack of thin films of two or more homogeneous or heterogeneous materials with different refractive indices.For example, layer 16 with a distributed Bragg reflector can be formed by alternating layers of silicon dioxide (SiO2) and titanium dioxide (TiO2); by alternating layers of silicon dioxide (SiO2), aluminum oxide (Al2O3) and titanium dioxide (TiO2); or by alternating layers of titanium dioxide (TiO2), silicon dioxide (SiO2) and tantalum pentoxide (Ta2O5).

[0031] In some embodiments, the layer 16 with distributed Bragg reflector is formed by a deposition process such as evaporation, atomic layer deposition (ALD) or metal-organic chemical vapor deposition (MOCVD), followed by a structuring process.

[0032] As in Fig. As shown in Figure 5, following the steps above, several conductive components 70 are arranged on the distributed Bragg reflector layer 16. The conductive components 70 extend through openings in the distributed Bragg reflector layer 16 and are each connected to the electrodes 130 on the electrode surface 13B. In some embodiments, the conductive components 70 are metal columns. It is worth noting that the use of the conductive components 70 can significantly increase the thickness and volume of the metal layer, thereby effectively enhancing the heat dissipation of the LED chip 13, reducing stress, improving current distribution, providing pressure relief during subsequent chip interconnection processes, and extending the lifetime of the device.

[0033] In some embodiments, the conductive component 70 is formed by electroplating, evaporation, screen printing, vacuum spraying, or the like. In some embodiments, the thickness of the conductive component 70 is in the range of 5 µm to 200 µm. In some embodiments, the conductive component 70 may be or contain a conductive material. For example, the conductive material may be a metal, a metal compound, other suitable conductive materials, or a combination thereof. However, the present disclosure is not limited to this. For example, the metal may be copper (Cu), tin (Sn), silver (Ag), gold (Au), nickel (Ni), indium (In), platinum (Pt), titanium (Ti), magnesium (Mg), zinc (Zn), germanium (Ge), palladium (Pd), iridium (Ir), titanium (Ti), chromium (Cr), tungsten (W), aluminum (Al), molybdenum (Mo), or an alloy thereof.For example, the metal compound could be tantalum nitride (TaN), titanium nitride (TiN), tungsten silicide (WSi2), indium tin oxide (ITO), or the like. However, the present disclosure is not limited to these.

[0034] As in Fig. As shown in Figure 6, following the steps above, a filler material structure 40 is arranged on layer 16 with a distributed Bragg reflector, wherein the filler material structure 40 surrounds and encapsulates the conductive component 70.

[0035] In some embodiments, the filler material structure 40 can be or contain polyimide (PI), epoxy resin, silicone, other suitable materials, or a combination thereof. However, the present disclosure is not limited thereto. In some embodiments, the filler material structure 40 can have a light transmittance of less than 10% by incorporating black, finely dispersed particles, such as carbon black, into the filler material structure, causing the filler material structure 40 to appear black.

[0036] In some embodiments, the filler material structure 40 contains several fillers. In some embodiments, the fillers contain silicon dioxide (SiO2), titanium dioxide (TiO2), tantalum pentoxide (Ta2O5), aluminum oxide (Al2O3), boron nitride (BN), or zirconium dioxide (ZrO2). In some embodiments, the fillers contain hollow silicon dioxide (SiO2) or solid silicon dioxide (SiO2). In some embodiments, the filler material structure 40 contains two or more types of fillers of different sizes. For example, the filler material structure 40 may contain two, three, four, or five or more different sizes of fillers. In some embodiments, the fillers may be elongated or spherical. In some embodiments, the filler material structure 40 contains two or more types of spherical fillers with different radii.

[0037] As in Fig. As shown in Figure 7, following the steps above, a section of the filler material structure 40 is removed to expose a first surface 70F of the conductive component 70. For example, the filler material structure 40 can be removed by chemical / mechanical polishing, etching, other suitable methods, or a combination thereof. However, the present disclosure is not limited to this. In some embodiments, the first surface 40F of the filler material structure 40 is coplanar to the first surface 70F of the conductive component 70 after the exposure of the first surface 70F of the conductive component 70.

[0038] As in Fig. As shown in Figure 8, following the steps above, several conductive contact surfaces 80 are arranged on corresponding conductive components 70 and electrically connected to them. In some embodiments, the upper surface of the conductive contact surface 80 and the first surface 40F of the filler material structure 40 are not coplanar.

[0039] In some embodiments, the conductive contact surface 80 vertically covers the conductive component 70 and a portion of the filler material structure 40. In other words, in a top view, the conductive contact surface 80 overlaps the conductive component 70 and is in direct contact with it, and one end or circumcircle of the conductive contact surface 80 overlaps a portion of the filler material structure 40 and is in direct contact with it. In some embodiments, the area of ​​the conductive contact surface 80 in a top view may be larger than that of the conductive component 70. Accordingly, in a top view, the conductive contact surface 80 may completely overlap the conductive component 70 and be in direct contact with it, and two ends or an entire circumcircle of the conductive contact surface 80 may overlap a portion of the filler material structure 40 and be in direct contact with it.

[0040] In some embodiments, the conductive contact surface 80 can have the same shape. In other embodiments, the conductive contact surface can have different shapes. In some embodiments, the conductive contact surface 80 has a square shape. In some embodiments, the conductive contact surface 80 has a square shape with a triangular notch.

[0041] In some embodiments, the conductive contact surface 80 can be or contain a conductive material. For example, the conductive material can be metal, a metal compound, other suitable conductive materials, or a combination thereof. However, the present disclosure is not limited to this. The metal can be copper (Cu), tin (Sn), platinum (Pt), titanium (Ti), aluminum (Al), molybdenum (Mo), magnesium (Mg), palladium (Pd), iridium (Ir), gold (Au), silver (Ag), nickel (Ni), indium (In), chromium (Cr), tungsten (W), zinc (Zn), germanium (Ge), or alloys thereof. In some embodiments, the metal compound can be indium tin oxide (ITO), tantalum nitride (TaN), tungsten silicide (WSi2), titanium nitride (TiN), or the like.

[0042] As in Fig. As shown in Figure 9, following the steps above, a second substrate 20 is first connected to the conductive component 70 and the conductive contact surface 80, followed by turning over the first substrate 10. In some embodiments, a second adhesive layer 12B is arranged on the second substrate 20 to connect the second substrate 20 to the conductive component 70 and the conductive contact surface 80, such that the conductive contact surface 80 faces the second adhesive layer 12B and is in contact with it.

[0043] In some embodiments, the second substrate 20 may be or contain an element from Group IV or a compound from Group IV such as silicon (Si), silicon carbide (SiC), or diamond (C); a compound from Groups III-V such as gallium nitride (GaN), gallium arsenide (GaAs), gallium phosphide (GaP), aluminum gallium arsenide (AlGaAs), aluminum nitride (AlN), or aluminum gallium nitride (AlGaN); other suitable materials; or a combination thereof. However, the present disclosure is not limited to these. In some embodiments, the second substrate 20 may be or contain sapphire, glass, quartz, ceramic, other suitable materials, or a combination thereof. However, the present disclosure is not limited to these.In some embodiments, the second substrate 20 may be or may contain polyimide (PI), polycarbonate (PC), polyethylene terephthalate (PET), polypropylene (PP), other suitable materials, or a combination thereof. However, the present disclosure is not limited to these. In some embodiments, the second substrate 20 may be or may contain a flexible substrate, a bendable substrate, a rigid substrate, or a combination thereof. However, the present disclosure is not limited to these. For example, the second substrate 20 may be a sapphire substrate. In some embodiments, the second substrate 20 may be or may contain a transparent substrate, a translucent substrate, or an opaque substrate. However, the present disclosure is not limited to these.

[0044] In some embodiments, the second adhesive layer may be or contain 12B polyimide (PI), polybenzoxazole (PBO), epoxy resin, transparent silicone, other suitable materials, or a combination thereof. However, the present disclosure is not limited thereto.

[0045] As in Fig. As shown in Figure 9, the first substrate 10 is removed. For example, depending on the type of first release layer 11, it can be rendered non-adherent by heating, laser treatment, treatment with UV light or the like, thereby removing the first substrate 10 from it.

[0046] As in Fig. As shown in Figure 10, following the steps above, the first adhesive layer 12A and the first release layer 11 on the light-emitting surface 13A of the LED chip 13 and the dielectric layer 14 are removed to expose the light-emitting surface 13A of the LED chip 13. For example, the first adhesive layer 12A and the first release layer 11 can be removed by a removal process such as etching, grinding, or other suitable methods, or a combination thereof.

[0047] With reference to Fig. 10. The upper surface 14T of the dielectric layer 14 can be coplanar with the light-emitting surface 13A after the first adhesive layer 12A and the first release layer 11 have been removed. However, the present disclosure is not limited to this. In some embodiments, the dielectric layer 14 surrounds the side surfaces 13C of the LED chip 13 in a continuous manner. Before the first adhesive layer 12A and the first release layer 11 are removed, the dielectric layer 14 can prevent the LED chip 13 from falling off. Furthermore, after the first adhesive layer 12A and the first release layer 11 are removed, the dielectric layer 14 secures the LED chip 13 in the LED assembly 1.

[0048] As in Fig. As shown in Figure 11, following the steps above, the third adhesive layer 12C is arranged on the light-emitting surface 13A of the LED chip 13 and on the upper surface 14T of the dielectric layer 14. In some embodiments, the third adhesive layer 12C can be silicone, epoxy resin, polyimide (PI), polybenzoxazole (PBO), other suitable materials, or a combination thereof. However, the present disclosure is not limited to these. In some embodiments, the third adhesive layer 12C can be a transparent material.

[0049] With reference to Fig. Following the steps above, a wavelength conversion layer 90 is arranged on the third adhesive layer 12C. In some embodiments, the wavelength conversion layer 90 can be a phosphor-glass composite (PIG) ​​material. For example, phosphor particles can be embedded in glass to prevent thermal quenching of the fluorescence of the phosphors (e.g., phosphor powders). In some embodiments, the wavelength conversion layer 90 can be a colloid with finely dispersed phosphor, which can be silicone and forms a phosphor film. In some embodiments, the wavelength conversion layer 90 is arranged on the third adhesive layer 12C above the LED chip 13, such that the third adhesive layer 12C connects the wavelength conversion layer 90 to the LED chip 13.In some embodiments, the wavelength conversion layer 90 can be arranged without the third adhesive layer 12C for bonding to the light-emitting surface 13A of the LED chip 13 (not shown). In some embodiments, the wavelength conversion layer 90 can comprise a red light conversion material, a blue light conversion material, a green light conversion material, a yellow light conversion material, other suitable light conversion materials, or a combination thereof. In some embodiments, the red light conversion material can comprise a red quantum dot or a red phosphor. However, the present disclosure is not limited thereto. For example, the red light conversion material can be (SrCa)AlSiN3:Eu. 2+ , Ca2Si5N8:Eu 2+ , Sr(LiAl3N4):Eu 2+, containing Mn-doped red fluoride phosphors, equivalents thereof, or a combination thereof. However, the present disclosure is not limited to this. The Mn-doped red fluoride phosphors can be K2GeF6:Mn 4+ , K2SiF6:Mn 4+ , K2TiF6:Mn 4+The present disclosure does not limit the blue light conversion material to include equivalents thereof or combinations thereof. In some embodiments, the blue light conversion material may contain a blue quantum dot or a blue phosphor. In some embodiments, the green light conversion material may contain a green quantum dot or a green phosphor. In some embodiments, the green light conversion material may contain a green quantum dot or a green phosphor. In some embodiments, the green light conversion material may contain a lutetium aluminum garnet phosphor (LuAG phosphor), a yttrium aluminum garnet phosphor (YAG phosphor), a β-sialon phosphor, a silicate phosphor, equivalents thereof, or combinations thereof. In some embodiments, the green light conversion material may contain equivalents thereof ...In some embodiments, the yellow light conversion material may contain a yellow quantum dot or a yellow phosphor. For example, the yellow light conversion material may contain a yttrium aluminum garnet phosphor.

[0050] In some embodiments, the LED chip 13 can emit blue light, and the wavelength conversion layer 90 can contain a yellow light-converting material. For example, the yellow light-converting material can be a yttrium aluminum garnet phosphor. Accordingly, light emitted by the LED chip 13 can be converted into white light after passing through the wavelength conversion layer 90. In some embodiments, the LED chip 13 can emit blue light, and the wavelength conversion layer 90 can contain a combination of a green light-converting material and a red light-converting material. For example, the wavelength conversion layer 90 can contain a green silicate phosphor (SiAlON) and a red K₂SiF₆:Mn₂. 4+-phosphor. Accordingly, light emitted by the LED chip 13 can be converted into white light after passing through the wavelength conversion layer 90. In some embodiments, the wavelength conversion layer 90 can contain a combination of a green phosphor and two red phosphors. For example, the wavelength conversion layer 90 can contain a green SiAlON phosphor, a red K₂SiF₆:Mn phosphor, and a red K₂SiF₆:Mn phosphor. 4+ - Fluorescent material and a red (SrCa)AlSiN3:Eu 2+ -contains phosphor. In some embodiments, the wavelength conversion layer 90 may contain a red quantum dot and a green quantum dot.

[0051] As in Fig. As shown in Figure 13, following the steps above, in some embodiments a mask layer 21 is arranged on the wavelength conversion layer 90. In some embodiments, the mask layer 21 can be formed by spin coating, other suitable processes, or a combination thereof. However, the present disclosure is not limited to this. In some embodiments, the mask layer 21 contains a photoresist. However, the present disclosure is not limited to this.

[0052] As in Fig. As shown in Figure 14, following the steps above, a singulation process is carried out using the mask layer 21 as a protective layer. The singulation process is carried out such that the mask layer 21, the wavelength conversion layer 90 located beneath the mask layer 21, and the dielectric layer 14 located beneath the wavelength conversion layer 90 are separated between a group of light-emitting diode chips 13 (e.g., those shown in Figure 14). Fig. 13) and another group of light-emitting diode chips 13 (not shown) are cut until a section of the dielectric layer 14 is cut. In some embodiments, the singulation process can be carried out using a blade, a laser, plasma cutting, other suitable methods or tools, or a combination thereof. For example, the cutting blade can be a diamond cutting blade.

[0053] As in Fig. As shown in Figure 15, following the steps above, a reflective layer 30 is formed on the side surface 90S of the wavelength conversion layer 90 and on the upper surface 21T of the mask layer 21. In some embodiments, the reflective layer 30 can be formed by sputtering, electron beam evaporation, electroplating, chemical vapor deposition, resistance heating evaporation, other suitable formation processes, or a combination thereof. However, the present disclosure is not limited to these. In some embodiments, the reflective layer 30 can be formed in the form of a cover. In some embodiments, the reflective layer 30 includes an upper reflective layer 31 and a reflective layer 32.

[0054] In some embodiments, the reflective layer 30, the upper reflective layer 31, and the reflective layer 32 may contain a reflective material. For example, the reflective material may contain titanium (Ti), copper (Cu), silver (Ag), aluminum (Al), chromium (Cr), alloys thereof, equivalents thereof, or a combination thereof. However, the present disclosure is not limited to such materials. In some embodiments, the reflective layer 30, the upper reflective layer 31, and the reflective layer 32 may contain aluminum (Al) or may be aluminum (Al) that is substantially free of copper (Cu). In some embodiments, the reflective layer 30, the upper reflective layer 31, and the reflective layer 32 may contain an aluminum-copper alloy (AlCu) in which copper may be present in an amount of 0.1 wt.% to 20 wt.% of the total weight of the aluminum-copper alloy.In some embodiments, the aluminum-copper alloy may contain 0.1 wt.% to 20 wt.% copper and 80 wt.% to 99.9 wt.% aluminum, based on the total weight of the aluminum-copper alloy. For example, the copper in the aluminum-copper alloy may be present in an amount of 0.1 wt.%, 0.5 wt.%, 1 wt.%, 2 wt.%, 3 wt.%, 4 wt.%, 5 wt.%, 10 wt.%, 15 wt.%, 20 wt.%, or any value or range formed between these, of the total weight of the aluminum-copper alloy. However, the present disclosure is not limited to this. For example, the copper in the aluminum-copper alloy may be present in an amount of 0.1 wt.% to 0.5 wt.% of the total weight of the aluminum-copper alloy. Excessive copper content in the aluminum-copper alloy can lead to insufficient reflectivity.In other embodiments, the reflective layer 30, the upper reflective layer 31 and the reflective layer 32 may contain an aluminum-copper alloy (AlCu) in which copper is present in an amount of 0.1%-20% based on a total number of atoms of the aluminum-copper alloy, 0.1%-20% based on a total mass of the aluminum-copper alloy or 0.1%-20% based on a total volume of the aluminum-copper alloy.

[0055] In some embodiments, the reflective layer 30, the upper reflective layer 31, and the reflective layer 32 can contain a distributed Bragg reflector (DBR). In some embodiments, the distributed Bragg reflector can be formed by atomic layer deposition (ALD) on the side surfaces 90S of the wavelength conversion layer 90.

[0056] As in Fig. As shown in Figure 16, following the steps above, a removal process is carried out to remove the upper reflective layer 31 of the reflective layer 30 and the mask layer 21, thereby forming the reflective layer 32 and exposing the upper surface 90T of the wavelength conversion layer 90. In some embodiments, the removal process may involve soaking in or rinsing with a paint stripper such that the mask layer 21 and the upper reflective layer 31 are removed by the paint stripper, leaving the reflective layer 32. In some embodiments, the reflective layer 32 is arranged on the side surface 90S of the wavelength conversion layer 90, the inner surface 14S of the dielectric layer 14, and the second surface 14M of the dielectric layer 14. Accordingly, the light emission efficiency of the LED chip 13 can be increased by the reflective layer 32.

[0057] As in Fig. As shown in Figure 16, the reflective layer 32 on the side faces 90S of the wavelength conversion layer 90 can have a thickness t1 in a first direction D1. In some embodiments, the thickness t1 can be greater than 500 Å. However, the present disclosure is not limited to this. In some embodiments, the thickness t1 can be in the range of 0.05 µm to 10 µm. For example, the thickness t1 can be 0.05 µm, 0.08 µm, 0.1 µm, 0.3 µm, 0.7 µm, 1 µm, 3 µm, 5 µm, 7 µm, 9 µm, or 10 µm. In some embodiments, a reduced thickness t1 of the reflective layer 32 can lead to insufficient reflection of light emitted by the LED chip 13. A greater thickness t1 of the reflective layer 32 can lead to an excessively large volume of the reflective layer 32. In some embodiments, the thickness t1 gradually increases in a second direction D2.In some embodiments, the thickness t1 of the reflective layer 32 is thinner near the dielectric layer 14 and increases towards the upper surface 90T of the wavelength conversion layer 90.

[0058] As in Fig. As shown in Figure 16, in some embodiments, the reflective layer 32 can have the shape of an L or an inverted L in a cross-sectional view after the removal process. The reflective layer 32 can prevent light emitted by the LED chip 13 from escaping through the side faces 13C of the LED chip 13 and the side faces 90S of the wavelength conversion layer 90. Furthermore, the reflective layer 32 can prevent light emitted by one LED chip 13 from interfering with another LED chip 13 of a different LED assembly 1. That is, the reflective layer 32 can prevent cross-coupling between the LED chips 13 of respective LED assemblies 1.

[0059] Following the steps above, a protective layer 50 is formed on the reflective layer 32. After formation, the protective layer 50 is located on the upper surface 90T of the wavelength conversion layer 90 and the reflective layer 32. Subsequently, the portion of the protective layer 50 on the upper surface 90T of the wavelength conversion layer 90 is removed. Finally, the protective layer 50 is arranged on the reflective layer 32 as shown in Fig. Figure 17 shows that in some embodiments, the upper surface 50T of the protective layer 50, the upper surface 90T of the wavelength conversion layer 90, and the upper surface 32T of the reflective layer 32 are coplanar. In some embodiments, the protective layer 50 is formed by a casting process. In some embodiments, the protective layer 50 may contain epoxy resin, polyimide (PI), or silicone. In some embodiments, the protective layer 50 may also contain fillers. In some embodiments, the fillers include titanium dioxide (TiO2), tantalum pentoxide (Ta2O5), silicon dioxide (SiO2), boron nitride (BN), aluminum oxide (Al2O3), or zirconium dioxide (ZrO2). In some embodiments, the fillers include hollow silicon dioxide (SiO2) or solid silicon dioxide (SiO2). In some embodiments, the protective layer 50 contains two or more types of fillers of different sizes.For example, the protective layer 50 can contain two, three, four, or five or more different sizes of fillers. In some embodiments, the filler particles can be spherical or elongated. In some embodiments, the protective layer 50 contains two or more types of spherical fillers with different radii.

[0060] In some embodiments, the step of forming the protective layer 50 can be omitted. That is, the LED assembly 1 does not need to include the protective layer 50, and subsequent processes can be carried out. Omitting the step of forming the protective layer 50 can reduce manufacturing costs while allowing the reflective layer 32 to prevent cross-coupling between the LED chips 13. In some embodiments, the LED assembly 1 does not need to include the protective layer 50. In a cross-sectional view, the reflective layer 32 can be L-shaped or inverted L-shaped, and can be square or rectangular.

[0061] With reference to Fig. 18 In some embodiments, the second substrate 20 and the second adhesive layer 12B are removed. For example, depending on the nature of the second adhesive layer 12B, it can be rendered non-adherent by heating, UV light, laser, laser delamination, or other suitable methods, thereby enabling the removal of the second substrate 20. Subsequently, the second adhesive layer 12B can be removed by a physical or chemical process. It should be noted that in some embodiments, the second adhesive layer 12B and the second substrate 20 can be removed simultaneously in the same step using a suitable process. The present disclosure is not limited to such possibilities.

[0062] With reference to Fig. 19 A component singulation process is carried out on the protective layer 50, the underlying reflective layer 32, the layer 16 with distributed Bragg reflector and the filler material structure 40 between a group of light-emitting diode chips 13 (e.g. those which are in Fig. 18) and another group of light-emitting diode chips 13 (not shown) to form the independent light-emitting diode assembly 1, as shown in Fig. Figure 1 illustrates how to form. In some embodiments, the singulation process (assembly singulation process) between the two groups of LED chips 13 can be carried out using a blade, a laser, plasma cutting, other suitable methods or tools, or a combination thereof. For example, the cutting blade can be a diamond blade. With reference to Fig. In some embodiments, an outer coplanar surface of the light-emitting diode assembly 1 is formed. That is, an outer surface 50A of the protective layer 50, an outer surface 32A of the reflective layer 32, an outer surface 14A of the dielectric layer 14, an outer surface 16A of the layer 16 with distributed Bragg filter, and an outer surface 40A of the filler material structure 40 are coplanar.

[0063] It should be mentioned that in the isolation process from Fig. 14. The cutting depth can be adjusted to different heights. With reference to Fig. Figure 20 illustrates a schematic cross-sectional view of a light-emitting diode assembly 2 according to some embodiments of the present disclosure, wherein the section depth can extend to the lower surface 90B of the wavelength conversion layer 90. In the second direction D2, the lower surface 32B of the reflective layer 32 is substantially coplanar with the lower surface 90B of the wavelength conversion layer 90, while the lower surface 50B of the protective layer 50 is slightly higher than the lower surface 90B of the wavelength conversion layer 90. In some embodiments, the light-emitting diode assembly 2 may not include the protective layer 50. In a cross-sectional view, the reflective layer 32 may have the shape of an L or an inverted L, and may be square or rectangular.

[0064] With reference to Fig. Figure 21 illustrates a schematic cross-sectional view of a light-emitting diode assembly 3 according to some embodiments of the present disclosure, wherein the cutting depth can extend from the wavelength conversion layer 90 to a bottom surface of the third adhesive layer 12C without penetrating the dielectric layer 14. In other words, the cutting terminates at a boundary between the third adhesive layer 12C and the dielectric layer 14. In the second direction D2, the bottom surface 32B of the reflective layer 32 is substantially coplanar with the light-emitting surface 13A of the light-emitting diode chip 13, while the bottom surface 50B of the protective layer 50 is slightly higher than the light-emitting surface 13A of the light-emitting diode chip 13.

[0065] In some embodiments, the third adhesive layer 12C, used for bonding, can be omitted. That is, the LED assembly 3 need not include the third adhesive layer 12C, and the wavelength conversion layer 90 can be located on the light-emitting surface 13A of the LED chip 13. The cut depth can extend to the lower surface 90B of the wavelength conversion layer 90. In the second direction D2, the lower surface 32B of the reflective layer 32 is substantially coplanar with the light-emitting surface 13A of the LED chip 13, while the lower surface 50B of the protective layer 50 is slightly higher than the light-emitting surface 13A of the LED chip 13. In some embodiments, the LED assembly 3 can omit the protective layer 50. In a cross-sectional view, the reflective layer 32 can be L-shaped or inverted L-shaped, square, or rectangular.

[0066] As in Fig. Figure 22 illustrates a schematic cross-sectional view of a light-emitting diode assembly 4 according to some embodiments of the present disclosure, wherein the cutting depth can extend from the wavelength conversion layer 90 to a bottom surface of the dielectric layer 14 without penetrating the distributed Bragg reflector layer 16. In other words, the cutting terminates at a boundary between the dielectric layer 14 and the distributed Bragg reflector layer 16. The lower surface 32B of the reflective layer 32 is in contact with the upper surface 16T of the distributed Bragg reflector layer 16. In the second direction D2, the lower surface 50B of the protective layer 50 is slightly higher than the electrode surface 13B of the light-emitting diode chip 13.

[0067] In some embodiments, the third adhesive layer 12C, used for joining, can be omitted. That is, the LED assembly 4 need not include the third adhesive layer 12C, and the wavelength conversion layer 90 can be located on the light-emitting surface 13A of the LED chip 13. The cutting depth can extend from the wavelength conversion layer 90 to a bottom surface of the dielectric layer 14 without penetrating the distributed Bragg reflector layer 16. In other words, the cutting stops at a boundary between the dielectric layer 14 and the DBR layer 16. The bottom surface 32B of the reflective layer 32 is in contact with the top surface 16T of the distributed Bragg reflector layer 16. In the second direction D2, the bottom surface 50B of the protective layer 50 is slightly higher than the electrode surface 13B of the LED chip 13.In some embodiments, the LED assembly 4 may not include the protective layer 50. In a cross-sectional view, the reflective layer 32 may have the shape of an L or an inverted L, and may be square or rectangular.

[0068] As in Fig.Figure 23 illustrates a schematic cross-sectional view of a light-emitting diode assembly 5 according to some embodiments of the present disclosure, wherein the cutting depth can extend from the wavelength conversion layer 90 to the lower surface 16B of the layer 16 with the distributed Bragg reflector without penetrating the filler material structure 40. In other words, the cutting ends at a boundary between the layer 16 with the distributed Bragg reflector and the filler material structure 40. The lower surface 32B of the reflective layer 32 is in contact with the upper surface 40T of the filler material structure 40. In the second direction D2, the lower surface 50B of the protective layer 50 is slightly higher than the lower surface 16B of the layer 16 with the distributed Bragg reflector.

[0069] In some embodiments, the third adhesive layer 12C, used for bonding, can be omitted. That is, the LED assembly 5 need not include the third adhesive layer 12C, and the wavelength conversion layer 90 can be located on the light-emitting surface 13A of the LED chip 13. The cutting depth can extend from the wavelength conversion layer 90 to the lower surface 16B of the distributed Bragg reflector layer 16 without penetrating the filler material structure 40. In other words, the cutting ends at a boundary between the distributed Bragg reflector layer 16 and the filler material layer 40. The lower surface 32B of the reflective layer 32 is in contact with the upper surface 40T of the filler material layer 40. In the second direction D2, the lower surface 50B of the protective layer 50 is slightly higher than the lower surface 16B of the layer 16 with distributed Bragg reflector.In some embodiments, the protective layer 50 in the LED assembly 5 can be omitted. In a cross-sectional view, the reflective layer 32 can have the shape of an L or an inverted L, and can be square or rectangular.

[0070] Accordingly, any one or more of the LED assemblies 1, 2, 3, 4, and 5 can be combined in any suitable way and applied to a headlight with adaptive driving light (ADB headlight). Several independent LED assemblies 1, 2, 3, 4, and 5 can be mounted inside the headlight with adaptive driving light. The reflective layer 32 of each independent LED assembly 1, 2, 3, 4, and 5 can prevent light emitted by the LED chip 13 of one LED assembly 1 from interfering with the LED chip 13 of another LED assembly 1, thereby preventing cross-coupling among the LED chips 13 of the independent LED assemblies 1, 2, 3, 4, and 5.

[0071] In some embodiments, a headlight with adaptive driving light may include any one or more of the LED assemblies 1, 2, 3, 4, and 5, combined in any suitable manner, together with a printed circuit board (not shown). However, the present disclosure is not limited thereto. In some embodiments, the headlight with adaptive driving light may further include a processor (not shown) and an image acquisition device (not shown). In some embodiments, the processor may be electrically connected to the assembly structures to perform calculations. In some embodiments, the processor may include a multi-core CPU, a central processing unit (CPU), a graphics processing unit (GPU), equivalents thereof, or a combination thereof. However, the present disclosure is not limited thereto.In some embodiments, the image acquisition device may include a light-based detection and distance measurement device (LIDAR device), a video camera, a camera, equivalents thereof, or a combination thereof. However, the present disclosure is not limited thereto. In some embodiments, the image acquisition device may be configured to capture images and transmit them to the processor. In some embodiments, the image acquisition device may be configured to capture street images, pedestrian images, or vehicle images and transmit such images to the processor. In some embodiments, the processor may be configured to analyze the captured images to determine whether one or more of the LED assemblies 1 are turned on or off. For example, at least one of the LED assemblies 1 may be turned on or off according to different environments.In some embodiments, the LED chips 13 of the LED assemblies 1 in the headlight with adaptive driving light can be configured to be controlled independently.

[0072] The components of the embodiments of this disclosure can be combined or used in various permutations, provided that such combinations do not deviate from the concept of the invention or lead to a conflict. Furthermore, the scope of this disclosure is not limited to the processes, machines, products, material compositions, devices, methods, and steps specifically described in the embodiments of the application. Any processes, machines, products, material compositions, devices, methods, and steps currently known to a person skilled in the art or that may be developed by such persons in the future, which perform essentially the same function or achieve essentially the same result as the embodiments disclosed herein, may likewise be used within the scope of this disclosure.Accordingly, the scope of this disclosure includes the preceding processes, machines, products, material compositions, facilities, methods, and steps. It should be noted that no embodiment or claim of this disclosure is required to achieve all the tasks, advantages, and / or features described herein.

[0073] The preceding description of some embodiments has been provided to enable the person skilled in the art to fully understand the principles of this disclosure. It is understood by the person skilled in the art that, based on the embodiments disclosed herein, other processes and structures may be designed or modified to achieve the same purposes and / or advantages as the described embodiments. It is further understood that such equivalent processes and structures fall within the scope of this disclosure and that various modifications, substitutions, and alterations may be made without departing from the scope of this disclosure. QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] TW 113147105

[0001]

Claims

Light-emitting diode assembly comprising: a light-emitting diode chip (13) comprising a light-emitting surface and several side surfaces; a wavelength conversion layer (90) arranged on the light-emitting surface and comprising several side surfaces; a dielectric layer (14) covering the several side surfaces of the light-emitting diode chip (13); a layer (16) with a distributed Bragg reflector arranged beneath the light-emitting diode chip (13); a conductive component (70) arranged beneath the layer (16) with a distributed Bragg reflector and electrically connected to the light-emitting diode chip through the layer (16) with a distributed Bragg reflector; and a reflective layer (30) arranged on the several side surfaces of the wavelength conversion layer (14). Light-emitting diode assembly according to claim 1, wherein the reflective layer is formed in an L-shape in a cross-sectional view. Light-emitting diode assembly according to claim 1 or 2, further comprising a protective layer arranged on the reflective layer, wherein the protective layer preferably comprises fillers. Light-emitting diode assembly according to one of the preceding claims, further comprising a protective layer comprising an upper surface, an inner surface, a lower surface and an outer surface, wherein the reflective layer is arranged on the lower surface and the inner surface of the protective layer and is arranged such that the upper surface and the outer surface of the protective layer are exposed. Light-emitting diode assembly according to one of the preceding claims, wherein the dielectric layer comprises epoxy resin, polyimide, polybenzoxazole, silicone, silicon dioxide or silicon nitride. Light-emitting diode assembly according to one of the preceding claims, wherein the conductive component comprises a metal column. Light-emitting diode assembly according to one of the preceding claims, further comprising a filler material structure arranged below the layer with distributed Bragg reflector and surrounding the conductive component, wherein the filler material structure preferably comprises technical carbon black or the filler material structure comprises several fillers, wherein the filler material structure preferably comprises two or more types of fillers. Light-emitting diode assembly according to one of the preceding claims, wherein the light-emitting diode chip does not have a growth substrate. Light-emitting diode assembly according to one of the preceding claims 3 - 8, wherein an outer surface of the protective layer, an outer surface of the reflective layer, an outer surface of the dielectric layer and an outer surface of the layer with distributed Bragg reflector are coplanar. Light-emitting diode assembly according to one of the preceding claims, further comprising an adhesive layer inserted between the wavelength conversion layer and the light-emitting diode chip. Light-emitting diode assembly according to one of the preceding claims, wherein the reflective layer has a thickness in the range of 0.05 µm to 10 µm and / or the reflective layer has a lower surface which is in contact with an upper surface of the filler material structure. Light-emitting diode assembly according to one of the preceding claims, wherein the light-emitting diode assembly is formed in a cube shape or a cube-like shape. Light-emitting diode assembly according to one of the preceding claims, further comprising a conductive contact surface which is electrically connected to the conductive component. Light-emitting diode assembly according to one of the preceding claims, wherein the layer with distributed Bragg reflector comprises an opening for receiving the conductive component. Light-emitting diode assembly according to one of the preceding claims, wherein the wavelength conversion layer comprises a phosphor-glass composite material.

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