Power semiconductor device

By diagonally positioning main electrode-emitter sensing terminals directly connected to electrodes, the power semiconductor device achieves miniaturization and maintains insulation, addressing wiring complexity and space limitations, enabling high-temperature and high-speed operation.

DE112019007924B4Active Publication Date: 2026-07-09MITSUBISHI ELECTRIC CORP
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Patent Information

Application Number
DE112019007924
Authority / Receiving Office
DE · DE
Patent Type
Patents
Current Assignee / Owner
Filing Date
2019-11-28
Publication Date
2026-07-09
Estimated Expiration
2039-11-28

AI Technical Summary

Technical Problem

Conventional power semiconductor devices face challenges in miniaturization due to complex wiring and limited space on the insulating substrate, and external mounting of main electrode-emitter locators compromises insulation performance.

Method used

The power semiconductor device features main electrode-emitter sensing terminals directly connected to the main electrodes, with diagonal positioning outside the module, reducing the distance between these terminals and electrodes, eliminating the need for external connections, and allowing for a compact design.

Benefits of technology

This configuration enables module miniaturization while maintaining insulation performance, facilitating high-temperature and high-speed operation with wide-bandgap semiconductor materials, and allows for a compact assembly with integrated gate drivers.

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Abstract

Power semiconductor device comprising: - Main electrodes (1, 2) each arranged in each of a plurality of semiconductor chips (11);and main electrode emitter measuring terminals (3, 4) which are directly connected to each of the main electrodes (1, 2) and are partially exposed outside a module, wherein: - each of the main electrode emitter measuring terminals (3, 4) is diagonal to each other, - the distance from each of the main electrode emitter measuring terminals (3, 4) to each of the main electrodes (1, 2) which are connected to each of the main electrode emitter measuring terminals (3, 4) is less in plan view outside the module than the distance between the main electrode emitter measuring terminals (3, 4), - auxiliary emitter measuring terminals (5, 6) are formed which are indirectly connected to each of the main electrodes (1, 2) and are partially exposed outside the module, and - the auxiliary emitter measuring terminals (5, 6) are arranged diagonally to each other in plan view outside the module such that they are parallel to the main electrode emitter measuring terminals (3, 4). opposite each other;
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Citation Information

Patent Citations

  • Power semiconductor module and semiconductor power conversion device equipped with the same

    JP2010016925A

  • Semiconductor module and power conversion device

    WO2018193929A1

  • JP002010016925A