Imaging element and electronic equipment

Abstract

A light detection device with a more suitable configuration will be provided. A light detection device of the present disclosure comprises the following: a first floating-diffusion region corresponding to a first photodiode of a first pixel; a second floating-diffusion region corresponding to a second photodiode of the first pixel; a third floating-diffusion region corresponding to a first photodiode of a second pixel; a fourth floating-diffusion region corresponding to a second photodiode of the second pixel; and an electrode coupled to the first, second, third, and fourth floating-diffusion regions, wherein, in a top view, the first length of the electrode in a first direction is greater than the second length of the electrode in a second direction. The present disclosure can be applied, for example, to a CMOS image sensor.

Description

Technical field

[0001] The present disclosure relates to an imaging element and an electronic device, and in particular relates to an imaging element and an electronic device capable of providing an imaging element with a more suitable configuration. <QUERVERWEIS AUF VERWANDTE ANMELDUNGEN>

[0002] This application claims the benefits of the Japanese priority patent application JP 2023-123021, filed on July 28, 2023, the entire contents of which are hereby incorporated by reference. background

[0003] Patent literature 1 discloses an imaging element including a separation unit arranged at a boundary between pixels arranged on a semiconductor substrate and an embedded electrode embedded in a front surface side of the semiconductor substrate at a boundary between pixels that overlap with the separation unit and are connected to the semiconductor substrate. List of citations from patent literature

[0004] PTL 1: WO 2022 / 138914 A Brief description of the invention: Technical problem

[0005] In the imaging element from patent literature 1, the influence of the resistance of the embedded electrode or the electric field between a charge transfer unit and the embedded electrode was not taken into account.

[0006] The present disclosure was made in view of such a situation, and it is desirable to provide an imaging element with a more suitable configuration. [Solution to the problem]

[0007] An imaging element according to a first aspect of the present disclosure is an imaging element comprising: a pixel substrate in which multiple pixels are formed, the multiple pixels each comprising a photoelectric conversion unit and a charge transfer unit configured to transfer a charge generated by the photoelectric conversion unit to a charge holding unit;and a separation unit formed at a boundary between the photoelectric conversion unit in the pixel substrate, and an embedded electrode embedded adjacent to a corner of the photoelectric conversion unit in the separation unit, wherein the embedded electrode is formed as the charge holding unit of the pixels and is formed such that a size of the embedded electrode differs between a first direction and a second direction along the photoelectric conversion unit in a top view.

[0008] An electronic device according to the first aspect of the present disclosure is an electronic device comprising an imaging element having: a pixel substrate in which several pixels are formed, each of the several pixels comprising a photoelectric conversion unit and a charge transfer unit configured to transfer a charge generated by the photoelectric conversion unit to a charge holding unit; a separation unit formed at a boundary between the photoelectric conversion unit and the pixel substrate;and an embedded electrode that is embedded adjacent to a corner of the photoelectric conversion unit in the separation unit, wherein the embedded electrode is formed as the charge holding unit of the pixels and is formed such that a size of the embedded electrode differs between a first direction and a second direction along the photoelectric conversion unit in a top view.

[0009] An imaging element according to a second aspect of the present disclosure is an imaging element comprising: a pixel substrate in which a phase-difference pixel is formed with multiple photoelectric conversion units and multiple charge transfer units configured to transfer a charge generated by each of the photoelectric conversion units to a charge-holding unit; and a circuit substrate stacked on the pixel substrate in which a pixel transistor is formed, the charge-holding unit being formed at an intermediate position between two of the photoelectric conversion units in a top view from a stacking direction, and each of the charge transfer units comprising multiple vertical gate electrodes arranged above the photoelectric conversion unit such that they span a region of maximum potential in the photoelectric conversion unit.

[0010] An electronic device according to the second aspect of the present disclosure is an electronic device comprising an imaging element having: a pixel substrate in which a phase-difference pixel is formed with multiple photoelectric conversion units and multiple charge transfer units configured to transfer a charge generated by each of the photoelectric conversion units to a charge holding unit;and a circuit substrate stacked on the pixel substrate in which a pixel transistor is formed, the charge holding unit being formed at an intermediate position between two of the photoelectric conversion units in a top view from a stacking direction, and each of the charge transfer units comprising several vertical gate electrodes arranged above the photoelectric conversion unit such that they span an area with a maximum potential in the photoelectric conversion unit.

[0011] In the first aspect of the present disclosure, the embedded electrode is formed as the charge holding unit of the pixels and is formed such that its size differs between the first direction and the second direction along the photoelectric conversion unit in a top view.

[0012] In the second aspect of the present disclosure, the charge holding unit is formed at an intermediate position between the two photoelectric conversion units in a top view from the stacking direction, and the charge transfer unit is provided with several vertical gate electrodes arranged above the photoelectric conversion unit, such that they span an area with a maximum potential in the photoelectric conversion unit. Brief description of the drawings [ Fig. 1] Fig. Figure 1 is a block diagram illustrating a configuration example of an imaging device. [ Fig. 2] Fig. Figure 2 is a block diagram illustrating a configuration example of a sensor element. [ Fig. 3] Fig. Figure 3 is a diagram illustrating a circuit configuration example of a pixel. [ Fig. 4] Fig. Figure 4 is a top view illustrating a first configuration example of a pixel according to a first embodiment. [ Fig. 5] Fig. Figure 5 is a cross-sectional view illustrating the first configuration example of the pixel according to the first embodiment. [ Fig. 6] Fig. Figure 6 is a top view illustrating a second configuration example of the pixel according to the first embodiment. [ Fig. 7] Fig. Figure 7 is a cross-sectional view illustrating the second configuration example of the pixel according to the first embodiment. [ Fig. 8] Fig. Figure 8 is a top view illustrating a third configuration example of the pixel according to the first embodiment. [ Fig. 9] Fig. Figure 9 is a cross-sectional view illustrating the third configuration example of the pixel according to the first embodiment. [ Fig. 10] Fig. Figure 10 is a top view illustrating a fourth configuration example of the pixel according to the first embodiment. [ Fig. 11] Fig. Figure 11 is a cross-sectional view illustrating the fourth configuration example of the pixel according to the first embodiment. [ Fig. 12] Fig. Figure 12 is a cross-sectional view illustrating a fifth configuration example of the pixel according to the first embodiment. [ Fig. 13] Fig. 13A and Fig. 13B are diagrams to explain one degree of freedom in an arrangement of vertical gate electrodes. [ Fig. 14] Fig. 14A and Fig. 14B are diagrams to explain a trade-off between charge transfer efficiency and pinning. [ Fig. 15] Fig. 15A and Fig. Figure 15B shows a top view and a cross-sectional view illustrating a first configuration example of a pixel according to a second embodiment. [ Fig. 16] Fig. 16A and Fig. Figure 16B shows a top view and a cross-sectional view illustrating a second configuration example of the pixel according to the second embodiment. [ Fig. 17] Fig. 17A and Fig. Figure 17B shows a top view and a cross-sectional view illustrating a third configuration example of the pixel according to the second embodiment. [ Fig. 18] Fig. 18A and Fig. Figure 18B shows a top view and a cross-sectional view illustrating a fourth configuration example of the pixel according to the second embodiment. [ Fig. 19] Fig. 19A and Fig. Figure 19B shows a top view and a cross-sectional view illustrating a fifth configuration example of the pixel according to the second embodiment. [ Fig. 20] Fig. 20A and Fig. Figure 20B shows another cross-sectional view illustrating the fifth configuration example of the pixel according to the second embodiment. [ Fig. 21] Fig. 21A and Fig. Figure 21B shows a top view and a cross-sectional view illustrating a sixth configuration example of the pixel according to the second embodiment. [ Fig. 22] Fig. Figure 22 is a block diagram illustrating an example of a schematic configuration of a vehicle control system. [ Fig. 23] Fig. Figure 23 illustrates an example of installation positions for a vehicle exterior information detection section and an imaging section. Description of embodiments

[0013] One way of carrying out the present disclosure (hereinafter referred to as an embodiment) is described below. It should be noted that the description is given in the following order. 1. Configuration example of the imaging device 2. Configuration example of the sensor element 3. First embodiment (embedded electrode with different sizes in the first and second directions) 4. Second embodiment (vertical gate electrode arranged to span a sensor potential) 5. Examples of an application to a mobile object <1. ​​Configuration example of an imaging device>

[0014] Here, a case in which the technology according to the present disclosure is applied to an imaging device is described as an example. However, the technology according to the present disclosure can be applied to general electronic devices using an imaging element (solid-state imaging device) in an image acquisition unit, such as a mobile device with an imaging function, including a mobile phone, and a copier using an imaging device in an image reading unit, in addition to imaging devices such as a digital camera and a video camera. It should be noted that a module mounted on an electronic device, that is, a camera module, can be used as an imaging element.

[0015] Fig. Figure 1 is a block diagram illustrating a configuration example of an imaging device, which is an example of an electronic device of the present disclosure.

[0016] As in Fig. As illustrated in Figure 1, an imaging device 1 includes an optical system including a lens group 10, a sensor element 20, a DSP circuit 30, a single-frame storage unit 40, a display section 50, a recording section 60, an operating system 70, a power supply system 80 and the like.

[0017] The DSP circuit 30, the single-frame storage 40, the display section 50, the recording section 60, the operating system 70, and the power supply system 80 are interconnected via a bus line 90. A CPU 100 controls each section in the imaging device 1.

[0018] The lens group 10 captures incident light (image light) from a subject and forms an image on an imaging surface of the sensor element 20. The sensor element 20 converts the amount of incident light, which is formed by the lens group 10 into an image on the imaging surface, into an electrical signal in units of pixels and outputs the electrical signal as a pixel signal. The sensor element 20 can be an imaging element (image sensor) including the pixels described below.

[0019] The display section 50 includes a panel-type display section, such as a liquid crystal display (LCD) section or an organic electroluminescent (EL) display section, and displays a moving image or a still image detected by the sensor element 20. The recording section 60 records the moving image or the still image detected by the sensor element 20 onto a recording medium, such as a memory card, a digital versatile disc (DVD), or a videotape.

[0020] The operating system 70 issues operating commands for various functions of the imaging device 1 according to operation performed by a user. The power supply system 80 delivers various power supplies, which are operating power supplies for the DSP circuit section 30, the single-frame memory 40, the display section 50, the recording section 60, and the operating system 70, to these power destinations as needed. <2. Configuration example of the sensor element>

[0021] Fig. Figure 2 is a block diagram illustrating a configuration example of sensor element 20.

[0022] The sensor element 20 can be configured as an imaging element, such as a complementary metal oxide semiconductor (CMOS) image sensor.

[0023] The sensor element 20 includes a pixel array unit 121, a vertical control unit 122, a column processing unit 123, a horizontal control unit 124, and a system control unit 125. The pixel array unit 121, the vertical control unit 122, the column processing unit 123, the horizontal control unit 124, and the system control unit 125 are formed on a semiconductor substrate (chip) not shown.

[0024] In the pixel array unit 121, unit pixels are arranged two-dimensionally in a matrix, each unit pixel having a photoelectric conversion unit that generates photoelectric charges in an amount corresponding to a quantity of incident light and accumulates the generated photoelectric charges therein. It is noted that in the following description, the photoelectric charge with a charge quantity corresponding to a quantity of incident light is simply referred to as a "charge," and a unit pixel is also simply referred to as a "pixel."

[0025] Furthermore, the pixel array unit 121 is provided with pixel control lines 126, which are formed for each row along the horizontal direction (arrangement direction of pixels in each pixel row) in the drawing, and vertical signal lines 127, which are formed for each column along the vertical direction (arrangement direction of pixels in each column) in the drawings, with reference to the pixels arranged in a matrix. One end of the pixel control line 126 is connected to an output end corresponding to each row of the vertical control unit 122.

[0026] The sensor element 20 further includes a signal processing unit 128 and a data storage unit 129. The signal processing unit 128 and the data storage unit 129 can be an external signal processing unit provided on a substrate different from the sensor element 20, for example a digital signal processor (DSP) or processing by software, or can be mounted on the same substrate as the sensor element 20.

[0027] The vertical control unit 122 includes a shift register, an address decoder, and the like, and controls each pixel of the pixel array unit 121 simultaneously for all pixels in units of rows or the like. Although a specific configuration of the vertical control unit 122 is not illustrated, the vertical control unit 122 includes a read scan system and a sweep scan system, or performs a batch sweep and batch transfer.

[0028] The read / scan system sequentially selects and scans the unit pixels of pixel array unit 121, line by line, to read a signal from the unit pixel. In the case of line-by-line control (rolling shutter operation), a sweep scan is performed on a readout line, where a read scan is performed by the read / scan system, a time equal to one shutter speed before the read scan. Furthermore, in the case of global exposure (global shutter operation), the batch sweep is performed a time equal to one shutter speed before the batch transfer.

[0029] When this sweeping process is performed, unnecessary charges are cleared (reset) from the photoelectric conversion unit of the unit pixels in the reading line. Then, an electronic shutter operation is performed by sweeping (resetting) the unneeded charges. Here, the electronic shutter operation refers to an operation of discharging the photoelectric charges of the photoelectric conversion unit and restarting the exposure (beginning a new accumulation of photoelectric charges).

[0030] The signal read by the read operation of the read scanning system corresponds to an amount of light received immediately before the read operation or received after the electronic shutter operation. In the case of line-by-line scanning, the period from the read time of the previous read operation or the sweep time by the electronic shutter operation to the read time by the current read operation is set to an accumulation period (an exposure period) of photoelectric charges in the unit pixel. In the case of global exposure, the period from a batch sweep to a batch transfer is set to the accumulation period (the exposure period).

[0031] Pixel signals output by the unit pixels in the pixel row selectively scanned by the vertical control unit 122 are delivered to the column processing unit 123 via corresponding vertical signal lines 127. The column processing unit 123 performs predetermined signal processing on pixel signals output by the unit pixels in the selected row via the vertical signal lines 127 for each pixel column of the pixel array unit 121, and temporarily stores the pixel signals that have undergone the predetermined signal processing.

[0032] In particular, the column processing unit 123 performs at least one noise reduction processing operation, for example, correlated double sampling (CDS) processing, as part of the signal processing. Through CDS processing by the column processing unit 123, noise with a fixed pattern that is unique to the pixel, such as reset noise or threshold variation of a gain transistor (AMP), is removed. It is noted that it is also possible to equip the column processing unit 123 with, for example, an analog-to-digital (AD) conversion function in addition to the noise reduction processing, in order to output a signal level as a digital signal.

[0033] The horizontal control unit 124 includes a shift register, an address decoder, and the like, and sequentially selects a unit circuit corresponding to the pixel column in the column processing unit 123. When the selective scanning is performed by the horizontal control unit 124, the pixel signals undergoing signal processing by the column processing unit 123 are sequentially output to the signal processing unit 128.

[0034] The system control unit 125 includes a timing generator that produces various timing signals and performs control of the vertical control unit 122, the column processing unit 123, the horizontal control unit 124 and the like based on the various timing signals generated by the timing generator.

[0035] The signal processing unit 128 has at least one addition processing function and performs various signal processing operations, such as addition processing, on the pixel signal output by the column processing unit 123. The data storage unit 129 temporarily stores data required for signal processing when the signal processing is performed by the signal processing unit 128.

[0036] Fig. Figure 3 is a diagram illustrating a circuit configuration example of pixels arranged in the pixel array unit 121.

[0037] Fig. Figure 3 illustrates pixel 150 and a pixel circuit 151 connected to pixel 150. The in Fig. 3 illustrated pixels 150 have a configuration of a pixel sharing unit in which four pixels 150 share a pixel circuit 151.

[0038] Each of the several pixels 150 includes a photoelectric conversion unit 161 and a charge transfer unit 162, which is electrically connected to the photoelectric conversion unit 161. Furthermore, the pixel circuit 151 includes a floating diffusion (FD) 163 and three pixel transistors, specifically a reset transistor 164, a gain transistor 165, and a selection transistor 166.

[0039] The photoelectric conversion unit 161 is designed as a photodiode (PD) and generates and accumulates a charge (signal charge) corresponding to the amount of received light. The photoelectric conversion unit 161 has a grounded anode terminal and a cathode terminal, to which FD 163 is connected via the charge transfer unit 162.

[0040] When it is switched on by a transfer signal TR, the charge transfer unit 162 reads the charge generated by the photoelectric conversion unit 161 and transfers the generated charge to the FD 163.

[0041] The FD 163 holds the charge read from the photoelectric conversion unit 161. When switched on by a reset signal RST, the reset transistor 164 resets the potential of the FD 163 by discharging the charge accumulated in the FD 163 to the drain (constant voltage source Vdd).

[0042] The amplification transistor 165 outputs a pixel signal corresponding to the potential of the FD 163. That is, the amplifier transistor 163 represents a source-follower circuit with a load MOSFET as a constant current source, connected via the vertical signal line 127. A pixel signal, indicating a level corresponding to the charge accumulated in the FD 163, is sent from the amplifier transistor 165 to the column processing unit 123 ( Fig. 2) output via the selection transistor 166 and the vertical signal line 127.

[0043] The selection transistor 166 is switched on when pixel 150 is selected by a selection signal SEL and outputs the pixel signal of pixel 150 to the column processing unit 123 via the vertical signal line 127. The signal lines to which the transfer signal TR, the selection signal SEL, and the reset signal RST are transmitted correspond to the pixel control lines 126 in Fig. 2.

[0044] The Pixel 150s are configured as described previously, but are not set to the configuration. Fig. 3 limited, and can have a configuration of a pixel-sharing unit in which pixels other than four, for example two pixels 150, share a pixel circuit 151. Furthermore, each of the pixels 150 can be connected to a pixel circuit 151, or the pixel 150 can have two or more photoelectric conversion units 161.

[0045] Hereinafter, embodiments of the sensor element 20, to which the technology according to the present disclosure is applied, are described. <3. First embodiment>

[0046] As a first embodiment of the sensor element 20 to which the technology according to the present disclosure is applied, a configuration of an imaging element including a separation unit formed at a boundary between photoelectric conversion units and an embedded electrode embedded in the separation unit in a pixel substrate in which several pixels are formed is described. (First configuration example)

[0047] A first configuration example of pixel 150 of the first embodiment of the sensor element 20, to which the technology according to the present disclosure is applied, is described with reference to Fig. 4 and Fig. 5 described. Fig. Figure 4 is a top view illustrating the first configuration example of the Pixel 150, and Fig. Figure 5 is a cross-sectional view showing the first configuration example of pixel 150 along a line a1-a1' in Fig. 4 illustrates.

[0048] As in Fig. 4 and Fig. As illustrated in Figure 5, the multiple pixels 150 are formed in a pixel substrate 210 containing silicon (Si). The pixel 150 includes a PD 211, which is part of the photoelectric conversion unit 161. Fig. 3 corresponds to a charge transfer unit 212, which corresponds to the charge transfer unit 162 in Fig. 3 corresponds to, and a pixel transistor 213, which corresponds to the reset transistor 164 or the like in Fig. 3 corresponds to each of the 150 pixels, which contains a PD of 211.

[0049] In the pixel substrate 210, a separation unit 214 is formed at a boundary between the pixels 150 (photoelectric conversion units 161). The separation unit 214 has a shape in which each pixel 150 (photoelectric conversion unit 161) is surrounded. The separation unit 214 is formed, for example, as full trench insulation (FTI) and can be formed by embedding an insulator, such as SiO2, in a notched portion that is bordered by a front surface (top side in Fig. 5) to a rear surface side (bottom side in Fig. 5) of the pixel substrate 210. Furthermore, a light-shielding element that blocks incident light can be arranged as the separation unit 214.

[0050] Furthermore, an embedded electrode 215 is located in the pixel substrate 210 at a boundary between the pixels 150 (photoelectric conversion units 161) and the front surface of the pixel substrate 210, which overlaps with the separation unit 214. Specifically, the embedded electrode 215 is located adjacent to the corners of each of the four pixels 150 (photoelectric conversion units 161) that form the pixel-sharing unit in the separation unit 214. In particular, the embedded electrode 215 is formed at a boundary between the pixels 150 that share a charge-holding unit, i.e., at a boundary between the pixels 150 of 2 × 2 pixels.

[0051] The embedded electrode 215 is designed as a charge holding unit (that of the FD 163 in Fig. 3 corresponds to) the pixel 150 formed. As in Fig. As illustrated in Figure 4, the embedded electrode 215 is formed such that its size is divided between a first direction (lateral direction in Fig. 4) and a second direction (longitudinal direction in Fig. 4) along the photoelectric conversion units 211 (Si parts) in a top view is different. In particular, the embedded electrode 215 is shorter in the second direction than in the first direction.

[0052] Furthermore, as in Fig. Figure 5 illustrates a through-electrode 221 connected to the embedded electrode 215 and electrically connected to the pixel transistor 213 via a wiring 222.

[0053] Furthermore, as in Fig. Figure 4 illustrates the charge transfer unit 212 being formed at a position where there is a distance (first distance) to the separation unit 214, which is located in the first direction (lateral direction). Fig. 4) extends, and a distance (second distance) to the separation unit 214, which extends in the second direction (longitudinal direction in Fig. 4) extends in which pixels 150 are different. In particular, the charge transfer unit 212 is formed at a position where the second distance is shorter than the first distance.

[0054] Here, it is assumed that the size of the embedded electrode 215 in the lateral direction and the size of the embedded electrode 215 in the longitudinal direction are equal. In this case, if the size of the embedded electrode 215 is reduced to avoid proximity between the charge transfer unit 212 and an FD layer 163, which increases the resistance of the embedded electrode, noise or an operational error may occur. Furthermore, if the size of the embedded electrode is increased on one side, thereby suppressing the resistance of the embedded electrode to some extent, an electric field between the embedded electrode and the charge transfer unit is increased, and a leakage current may be generated.

[0055] On the other hand, in pixel 150 of the first configuration example, the embedded electrode 215 is shorter in the second direction (longitudinal direction) than in the first direction (lateral direction). Furthermore, the charge transfer unit 212 is positioned where the second distance (distance to the separation unit 214, extending in the longitudinal direction) is shorter than the first distance (distance to the separation unit 214, extending in the lateral direction). This makes it possible to suppress interference between the embedded electrode 215 and the charge transfer unit 212, while ensuring a contact area between the embedded electrode 215 and the pixel substrate 210 (Si substrate).Consequently, by suppressing both the resistance of the embedded electrode 215 and the weakening of the electric field between the embedded electrode 215 and the charge transfer unit 212, it is possible to suppress the generation of various noise effects and achieve high image quality. As previously described, according to the pixel of the present embodiment, it is possible to provide an imaging element with a more suitable configuration. (Second configuration example)

[0056] A second configuration example of pixel 150 of the first embodiment of the sensor element 20, to which the technology according to the present disclosure is applied, is described with reference to Fig. 6 and Fig. 7 described. Fig. Figure 6 is a top view illustrating the second configuration example of the Pixel 150, and Fig. Figure 7 is a cross-sectional view showing the second configuration example of pixel 150 along a line a2-a2' in Fig. 6 illustrates.

[0057] The Pixel 150 in the second configuration example is basically configured similarly to the Pixel 150 in the first configuration example, which is configured with reference to Fig. 4 and Fig. 5 is described. However, as described in Fig. Figure 7 illustrates that pixel 150 of the second configuration example differs from pixel 150 of the first configuration example in that a circuit substrate 230 is applied to the front surface side (top side in Fig. 7) of the pixel substrate 210 is stacked and the pixel transistor 213 is formed in the circuit substrate 230.

[0058] Furthermore, as in Fig. Figure 6 illustrates that in the pixel substrate 210 a substrate contact 241, which is connected to a predetermined fixed potential (for example, GND potential), is formed as required at a boundary between the pixels 150 (photoelectric conversion units 161) at a part where the embedded electrode 215 is not formed.

[0059] As previously described, for pixel 150 of the second configuration example, the embedded electrode 215 is also shorter in the second direction (longitudinal direction) than in the first direction (lateral direction). Furthermore, the charge transfer unit 212 is positioned where the second distance (distance to the separation unit 214, which extends in the longitudinal direction) is shorter than the first distance (distance to the separation unit 214, which extends in the lateral direction). This makes it possible to suppress interference between the embedded electrode 215 and the charge transfer unit 212, while ensuring a contact area between the embedded electrode 215 and the pixel substrate 210 (Si substrate).Consequently, by suppressing both the resistance of the embedded electrode 215 and the weakening of the electric field between the embedded electrode 215 and the charge transfer unit 212, it is possible to suppress the generation of various noise effects and achieve high image quality. As previously described, according to the pixel of the present embodiment, it is possible to provide an imaging element with a more suitable configuration. (Third configuration example)

[0060] A third configuration example of pixel 150 of the first embodiment of the sensor element 20, to which the technology according to the present disclosure is applied, is described with reference to Fig. 8 and Fig. 9 described. Fig. Figure 8 is a top view illustrating the third configuration example of the Pixel 150, and Fig. Figure 9 is a cross-sectional view showing the third configuration example of pixel 150 along a line a3-a3' in Fig. 8 illustrates.

[0061] As in Fig. 8 and Fig. As illustrated in Figure 9, several pixels 150 are formed in the pixel substrate 210, which contains silicon (Si). The pixel 150 includes a PD 211, which is part of the photoelectric conversion unit 161. Fig. 3 corresponds to a charge transfer unit 212, which corresponds to the charge transfer unit 162 in Fig. 3 corresponds to, and a pixel transistor 213, which corresponds to the reset transistor 164 or the like in Fig. 3 corresponds. However, the Pixel 150 of the third configuration example includes multiple PDs 211 (specifically two PDs 211), unlike the Pixel 150 of the first configuration example, which includes one PD 211 ( Fig. 4 and Fig. 5) In pixel 150 of the third configuration example, two PDs 211 are formed such that the Si part is oriented in the lateral direction in Fig. 8 is subdivided. Furthermore, pixel 150 of the third configuration example includes several of the charge transfer units 212, which correspond to the multiple PDs 211. In this case, pixel 150 can be configured as a phase difference pixel for detecting a distance to an object.

[0062] In the pixel substrate 210, the separation unit 214 is formed at a boundary between the pixels 150 and a boundary between the photoelectric conversion units 161 contained in a pixel 150.

[0063] Furthermore, an embedded electrode 215 is located in the pixel substrate 210 at a boundary between the pixels 150 (photoelectric conversion units 161) and the front surface of the pixel substrate 210, overlapping with the separation unit 214. Specifically, the embedded electrode 215 is located adjacent to corners of two adjacent pixels 150 (four PDs 211) within the separation unit 214. In particular, the embedded electrode 215 is formed at a boundary between the pixels 150 that share a charge-holding unit 212, that is, at a boundary between the pixels 150 that extends in one direction (in Fig. 8 of the longitudinal direction) border orthogonally to a subdivision direction of the PD 211.

[0064] The embedded electrode 215 is formed as a charge-holding unit for the pixel 150. As in Fig. As illustrated in Figure 8, the embedded electrode 215 is formed such that its size is between the first direction (lateral direction in Fig. 4) and the second direction (longitudinal direction in Fig. 4) along the photoelectric conversion units 211 (Si parts) in a top view is different. In particular, the embedded electrode 215 is shorter in the second direction than in the first direction.

[0065] Furthermore, as in Fig. Figure 9 illustrates that the through-electrode 221 is connected to the embedded electrode 215 and is electrically connected to the pixel transistor 213 via a wiring 222.

[0066] Furthermore, as in Fig. Figure 8 illustrates the charge transfer unit 212 being formed at a position where there is a distance (first distance) to the separation unit 214, which is located in the first direction (lateral direction in Fig. 8) extends, and a distance (second distance) to the separation unit 214, which extends in the second direction (longitudinal direction in Fig. 8) extends in which pixels 150 are different. In particular, the charge transfer unit 212 is formed at a position where the second distance is shorter than the first distance.

[0067] As previously described, in pixel 150 of the third configuration example, the embedded electrode 215 is also shorter in the second direction (longitudinal direction) than in the first direction (lateral direction). Furthermore, the charge transfer unit 212 is positioned where the second distance (distance to the separation unit 214, which extends in the longitudinal direction) is shorter than the first distance (distance to the separation unit 214, which extends in the lateral direction). This makes it possible to suppress interference between the embedded electrode 215 and the charge transfer unit 212, while ensuring a contact area between the embedded electrode 212 and the pixel substrate 210 (Si substrate).Consequently, by suppressing both the resistance of the embedded electrode 215 and the weakening of the electric field between the embedded electrode 215 and the charge transfer unit 212, it is possible to suppress the generation of various noise effects and achieve high image quality. As previously described, according to the pixel of the present embodiment, it is possible to provide an imaging element with a more suitable configuration. (Fourth configuration example)

[0068] A fourth configuration example of pixel 150 of the first embodiment of the sensor element 20, to which the technology according to the present disclosure is applied, is described with reference to Fig. 10 and Fig. 11 described. Fig. Figure 10 is a top view illustrating the fourth configuration example of the Pixel 150, and Fig. 11 is a cross-sectional view showing the fourth configuration example of pixel 150 along a line a4-a4' in Fig. 10 illustrated.

[0069] The Pixel 150 in the fourth configuration example is basically configured similarly to the Pixel 150 in the third configuration example, which is configured with reference to Fig. 8 and Fig. 9 is described. However, as described in Fig. Figure 11 illustrates that pixel 150 of the fourth configuration example differs from pixel 150 of the third configuration example in that a circuit substrate 230 is applied to the front surface side (top side in Fig. 11) of the pixel substrate 210 is stacked and a pixel transistor 213 is formed in the circuit substrate 230.

[0070] Furthermore, as in Fig. Figure 10 illustrates that in the pixel substrate 210 a substrate contact 241, which is connected to a predetermined fixed potential (for example, GND potential), is formed as required at a boundary between the pixels 150 (photoelectric conversion units 161) at a part where the embedded electrode 215 is not formed.

[0071] As previously described, in pixel 150 of the fourth configuration example, the embedded electrode 215 is also shorter in the second direction (longitudinal direction) than in the first direction (lateral direction). Furthermore, the charge transfer unit 212 is positioned where the second distance (distance to the separation unit 214, which extends in the longitudinal direction) is shorter than the first distance (distance to the separation unit 214, which extends in the lateral direction). This makes it possible to suppress interference between the embedded electrode 215 and the charge transfer unit 212, while ensuring a contact area between the embedded electrode 215 and the pixel substrate 210 (Si substrate).Consequently, by suppressing both the resistance of the embedded electrode 215 and the weakening of the electric field between the embedded electrode 215 and the charge transfer unit 212, it is possible to suppress the generation of various noise effects and achieve high image quality. As previously described, according to the pixel of the present embodiment, it is possible to provide an imaging element with a more suitable configuration. (Fifth configuration example)

[0072] A fifth configuration example of pixel 150 of the first embodiment of the sensor element 20, to which the technology according to the present disclosure is applied, is described with reference to Fig. 12 described. A top view illustrating the fourth configuration example of Pixel 150 is similar to Fig. 10 (fourth configuration example) and Fig. Figure 12 is a cross-sectional view showing the fifth configuration example of pixel 150 along a line a4-a4' in Fig. 10 illustrated.

[0073] The Pixel 150 in the fifth configuration example is basically configured similarly to the Pixel 150 in the fourth configuration example, which is configured with reference to Fig. 10 and Fig. 11 is described. However, as described in Fig. Figure 12 illustrates that pixel 150 of the fifth configuration example differs from pixel 150 of the fourth configuration example in that a charge transfer unit 212V, formed as a vertical gate electrode and having a charge transfer function in the vertical direction, is included instead of the charge transfer unit 212.

[0074] As previously described, it is also possible with the Pixel 150 of the fifth configuration example to achieve similar effects to those of the Pixel 150 of the first to fourth configuration examples, and it is furthermore possible to achieve both an improvement in the target transfer function and an improvement in image quality.

[0075] It is noted that in the embodiment described above, the technology according to the present disclosure is not necessarily applied to all embedded electrodes 215 and the technology according to the present disclosure can be applied to any embedded electrode 215 as required. <4. Second embodiment>

[0076] As a second embodiment of the sensor element 20 to which the technology according to the present disclosure is applied, a configuration of an imaging element is described comprising: a pixel substrate in which a phase-difference pixel is formed with several photoelectric conversion units and several charge transfer units that transfer a charge generated by each of the photoelectric conversion units to a charge holding unit; and a circuit substrate stacked on the pixel substrate in which a pixel transistor is formed. (Related technology and problems)

[0077] In recent years, the miniaturization of pixels in CMOS image sensors has led to the introduction of a transfer gate with a vertical gate electrode (VG) to achieve both saturation signal strength and charge transfer characteristics. Furthermore, a structure increasing the number of vertical gate electrodes (VGs) has been proposed in recent years to further improve charge transfer capability.

[0078] For example, in a single-layer phase difference pixel P1, which is in Fig. Figure 13A illustrates two photodiodes (PDs) and pixel transistors M1 and M2, forming a pixel circuit, embedded in the same substrate. Therefore, the degree of freedom of the arrangement of vertical gate electrodes G11 and G12 is severely limited.

[0079] On the other hand, in a two-layer phase difference pixel P2, which is in Fig. As illustrated in Figure 13B, one degree of freedom of an arrangement of vertical gate electrodes G21 and G22 is improved, since the (not illustrated) pixel transistor is formed in a substrate that differs from that of the two PDs. In particular, the vertical gate electrodes G21 and G22 can be arranged in an available area PA, which is illustrated in the drawing.

[0080] To improve charge transfer capability, it is desirable to position the vertical gate electrodes G21 and G22 above the PD near an area (hereinafter also referred to as a sensor potential) with a maximum potential in the PD. However, it is difficult to achieve an effect on improving charge transfer capability due to a trade-off with pinning (hole concentration) on the lower portions (pointed portions facing the PD side) of the vertical gate electrodes G21 and G22.

[0081] Fig. Figure 14A illustrates a top view of the phase difference pixel P2, similar to the one in Fig. 13B and Fig. Figure 14B illustrates a cross-sectional view of the phase difference pixel P2 along a line aa' in Fig. 14A. As in Fig. Figure 14B illustrates that the phase difference pixel P2 is formed in a pixel substrate SB1 and that a circuit substrate SB2, in which a pixel transistor is formed, is stacked on top of the pixel substrate SB1.

[0082] In general, the closer a transfer gate is to a sensor potential of a PD, the more the PD can be modulated, thus improving charge transfer efficiency. As previously described, the sensor potential refers to a region with a maximum potential in the PD and is an area with the highest net n-type foreign matter concentration.

[0083] Therefore, it is in the Fig. Figure 14B illustrated phase difference pixel P2. When a sensor potential SP in the PD is closer to the vertical gate electrode G21, it is more difficult to ensure the hole concentration near the vertical gate electrode G21, and dark electrons are more likely to be generated over the interface state near the vertical gate electrode G21 (e.g., pinning becomes weak).

[0084] Furthermore, in the Fig. Figure 14B illustrated phase difference pixel P2 an influence of a disturbance on a CT transfer path caused by a fluctuation of peripheral foreign matter of the CT transfer path of charges from the PD to an FD.

[0085] On the other hand, in the second embodiment of the sensor element 20, to which the technology according to the present disclosure is applied, the FD is formed at an intermediate position between the two PDs in the top view from the stacking direction of the substrates, and the transfer gate is formed such that it has several vertical gate electrodes arranged above the PD so that they span the sensor potential.

[0086] Therefore, the vertical gate electrodes and the sensor potential can be separated to a certain extent, and pinning can be enhanced. On the other hand, although the degree of modulation of the PD is attenuated by the transfer gate, a modulation effect corresponding to the number of vertical gate electrodes can be obtained by arranging several (for example, two) vertical gate electrodes, and consequently, the transfer efficiency is not reduced. Therefore, it is possible to maintain the transfer efficiency while suppressing the generation of dark electrons via the interface state near the vertical gate electrodes. (First configuration example)

[0087] A first configuration example of pixel 150 of the second embodiment of the sensor element 20, to which the technology according to the present disclosure is applied, is described with reference to Fig. 15A and Fig. 15B described. Fig. Figure 15A is a top view illustrating the first configuration example of the Pixel 150, and Fig. 15B is a cross-sectional view showing the first configuration example of pixel 150 along a line aa' in Fig. 15A illustrates this.

[0088] The in Fig. 15A and Fig. Pixel 150, illustrated in Figure 15B, is formed in a pixel substrate SB1 containing silicon (Si). Pixel 150 includes two PDs 311 as a photoelectric conversion unit, a transfer gate 312 as a charge transfer unit, an FD 313 as a charge holding unit, and a pixel transistor (not illustrated) formed in a circuit substrate SB2 stacked on top of pixel substrate SB1. In the Fig. 15A and Fig. In 15B, illustrated pixel 150, two PDs 311 are formed such that the Si part is oriented in the lateral direction in Fig. 15A is subdivided. That is, pixel 150 can be formed as a phase difference pixel for detecting a distance to a subject.

[0089] The FD 313 is powered by direct n + -Iron implantation is formed in the Si substrate. The FD 313 is formed at an intermediate position between the two PDs 311 in the top view from the stacking direction of the substrates. In particular, the FD 313 is formed in the center of a region sandwiched between the two PDs 311 in the top view from the stacking direction. On the side of the FD 313 closer to the front surface of the pixel substrate SB1, a through-contact 313C is formed, which electrically connects the FD 313 and a wiring layer formed in the circuit substrate SB2.

[0090] In the pixel substrate SB1, a full trench insulation (FTI) area 314 is formed as a separation unit at a boundary with another pixel 150 and at a boundary between the PDs 311 contained in the pixel 150. Furthermore, an oxide film 315, such as a shallow trench insulation (STI), is formed such that it covers the side surface of the FTI 314 on the front surface of the pixel substrate SB1.

[0091] Furthermore, p-wells 316, which are p-type foreign matter regions, are formed at four corners of pixel 150 in the pixel substrate SB1. Pixel 150 is square in shape when viewed from the stacking direction. On the side of the p-well 316 closer to the front surface of the pixel substrate SB1, a through-contact 316C is formed, connecting the p-well 316 to a predetermined fixed potential (for example, GND potential).

[0092] The transfer gate 312 is formed on each of the two PDs 311. On the PD 311, the transfer gate 312 comprises two vertical gate electrodes 321 and 322, arranged to span a region (sensor potential SP) with a maximum potential in the PD 311, and a planar gate electrode 323, which is formed on the surface of the pixel substrate SB1 and electrically connected to the two vertical gate electrodes 321 and 322. As shown in Fig. As illustrated in Figure 15A, the two vertical gate electrodes 321 and 322 are arranged such that they span a straight line L passing through the center of the FD 313 and extending in a subdivision direction of the two PDs 311.

[0093] As previously described, in pixel 150 of the first configuration example, the FD 313 is formed at an intermediate position between the two PDs 311 in the top view from the stacking direction of the substrates, and the transfer gate 312 is formed such that it has the two vertical gate electrodes 321 and 322, which are arranged above each PD 311, so that the area (sensor potential SP) with a maximum potential in the PD 311 is spanned.

[0094] Since the vertical gate electrodes 321 and 322 and the sensor potential are separated to a certain degree, it is therefore possible to maintain a modulation level of the PD 311, i.e., the transfer efficiency, while suppressing the generation of dark electrons via the interface state near the vertical gate electrodes 321 and 322. Furthermore, by surrounding the transfer path CT with the two vertical gate electrodes 321 and 322, it is possible to suppress the influence of disturbances on the transfer path CT caused by fluctuations or similar impurities in the peripheral foreign matter of the transfer path CT, and to improve process variation stability. If multiple vertical gate electrodes can be formed in a single batch, the transfer path CT remains stable even if misalignment of the vertical gate electrodes occurs, thus further improving process variation stability.As previously described, according to the pixel of the present embodiment, it is possible to provide an imaging element with a more suitable configuration. (Second configuration example)

[0095] A second configuration example of pixel 150 of the second embodiment of the sensor element 20, to which the technology according to the present disclosure is applied, is described with reference to Fig. 16A and Fig. 16B described. Fig. Figure 16A is a top view illustrating the second configuration example of the Pixel 150, and Fig. 16B is a cross-sectional view showing the second configuration example of pixel 150 along a line aa' in Fig. 16A illustrates.

[0096] The Pixel 150 in the second configuration example is basically configured similarly to the Pixel 150 in the first configuration example, which is configured with reference to Fig. 15A and Fig. 15B is described. However, it differs, as described in Fig. 16A and Fig. Figure 16B illustrates the difference between pixel 150 of the second configuration example and pixel 150 of the first configuration example in that the oxide film 315 is formed such that it not only covers the side surface of the FTI 314 on the front surface side of the pixel substrate, but also a portion that is not used as the transfer path CT, on the side surface of the vertical gate electrodes 321 and 322.

[0097] In pixel 150 of the present embodiment, the capacity (drive load) of the entire transfer gate 312 increases because the size of the planar gate electrode is enlarged due to the arrangement of the multiple vertical gate electrodes. This directly affects the drive speed of pixel 150, i.e., the frame rate, in the development of miniaturization and multiple pixels.

[0098] On the other hand, in pixel 150 of the second configuration example, the capacity of the entire transfer gate 312 can be reduced by covering the part that is not used as the transfer path CT with an oxide film, such as an STI.

[0099] It is noted that in the Pixel 150 of the second configuration example, a p + -Diffusion layer with a foreign substance concentration higher than that of p-tub 316 in an adjacent area 316N of p-tub 316 is formed, so that a potential of PD 311 is maintained at the GND potential. (Third configuration example)

[0100] A third configuration example of pixel 150 of the second embodiment of the sensor element 20, to which the technology according to the present disclosure is applied, is described with reference to Fig. 17A and Fig. 17B described. Fig. Figure 17A is a top view illustrating the third configuration example of the Pixel 150, and Fig. 17B is a cross-sectional view showing the third configuration example of pixel 150 along a line aa' in Fig. 17A illustrates.

[0101] The Pixel 150 in the third configuration example is basically configured similarly to the Pixel 150 in the first configuration example, which was configured with reference to Fig. 15A and Fig. 15B is described. However, it differs, as described in Fig. 17A and Fig. Figure 17B illustrates that pixel 150 of the third configuration example differs from pixel 150 of the first configuration example in that the transfer gate 312 includes several (in particular two) planar gate electrodes 323-1 and 323-2 instead of the planar gate electrodes 323, which are formed on the front surface of the pixel substrate and are electrically connected to the vertical gate electrodes 321 and 322, respectively.

[0102] It is noted that the planar gate electrode 323-1 (vertical gate electrode 321) and the planar gate electrode 323-2 (vertical gate electrode 322) are electrically connected by a polysilicon via, wiring or the like and are supplied with the same potential.

[0103] As previously described, in pixel 150 of the third configuration example, the planar gate electrode of the transfer gate 312 is formed for each vertical gate electrode, thereby reducing the capacitance generated between the transfer gate 312 and the Si substrate. (Fourth configuration example)

[0104] A fourth configuration example of pixel 150 of the second embodiment of the sensor element 20, to which the technology according to the present disclosure is applied, is described with reference to Fig. 18A and Fig. 18B described. Fig. Figure 18A is a top view illustrating the fourth configuration example of the Pixel 150, and Fig. 18B is a cross-sectional view showing the fourth configuration example of pixel 150 along a line aa' in Fig. 18A illustrates.

[0105] The Pixel 150 in the fourth configuration example is basically configured similarly to the Pixel 150 in the second configuration example, which is configured with reference to Fig. 16A and Fig. 16B is described. However, it differs, as described in Fig. 18A and Fig. Figure 18B illustrates that pixel 150 of the fourth configuration example differs from pixel 150 of the second configuration example in that the transfer gate 312 includes, instead of the planar gate electrodes 323, the planar gate electrodes 323-1 and 323-2, which are formed on the front surface of the pixel substrate and are electrically connected to the vertical gate electrodes 321 and 322, respectively.

[0106] It is noted that the planar gate electrode 323-1 (vertical gate electrode 321) and the planar gate electrode 323-2 (vertical gate electrode 322) are electrically connected by a polysilicon via, wiring or the like and are supplied with the same potential.

[0107] As previously described, in pixel 150 of the fourth configuration example, the capacitance of the entire transfer gate 312 can be reduced by covering the part that is not used as the transfer path CT with the oxide film, such as an STI, and the capacitance generated between the transfer gate 312 and the Si substrate can be reduced for each vertical gate electrode by forming the planar gate electrode of the transfer gate 312. (Fifth configuration example)

[0108] A fifth configuration example of pixel 150 of the second embodiment of the sensor element 20, to which the technology according to the present disclosure is applied, is described with reference to Fig. 19A, Fig. 19B, Fig. 20A and Fig. 20B described. Fig. Figure 19A is a top view illustrating the fifth configuration example of the Pixel 150, and Fig. 19B is a cross-sectional view showing the fifth configuration example of pixel 150 along a line aa' in Fig. 19A illustrates this. Furthermore, Fig. 20A a cross-sectional view showing the fifth configuration example of pixel 150 along a line bb' in Fig. 19A illustrates, and is Fig. 20B a cross-sectional view showing the fifth configuration example of pixel 150 along a line cc' in Fig. 19A illustrates.

[0109] The Pixel 150 in the fifth configuration example is basically configured similarly to the Pixel 150 in the third configuration example, which is configured with reference to Fig. 17A and Fig. 17B is described. However, it differs, as described in Fig. 19A, Fig. 19B, Fig. 20A and Fig. Figure 20B illustrates the difference between pixel 150 of the fifth configuration example and pixel 150 of the third configuration example in that it contains an FD 313E formed as an embedded electrode instead of the FD 313 represented by n + -Ionic implantation is formed.

[0110] As previously described, the FD can also be defined by n + -Iron implantation is formed as an embedded electrode. (Sixth configuration example)

[0111] A sixth configuration example of pixel 150 of the second embodiment of the sensor element 20, to which the technology according to the present disclosure is applied, is described with reference to Fig. 21A and Fig. 21B described. Fig. Figure 21A is a top view illustrating the sixth configuration example of the Pixel 150, and Fig. 21B is a cross-sectional view showing the sixth configuration example of pixel 150 along a line aa' in Fig. 21A illustrates this.

[0112] The Pixel 150 in the sixth configuration example is basically configured similarly to the Pixel 150 in the fifth configuration example, which is configured with reference to Fig. 19A, Fig. 19B, Fig. 20A and Fig. 20B is described. However, it differs, as described in Fig. 21A and Fig. Figure 21B illustrates the difference between pixel 150 of the sixth configuration example and pixel 150 of the fifth configuration example in that the oxide film 315 is formed such that it not only covers the side surface of the FTI 314 on the front surface side of the pixel substrate, but also a portion that is not used as the transfer path CT, on the side surface of the vertical gate electrodes 321 and 322.

[0113] As previously described, in pixel 150 of the sixth configuration example, the capacity of the entire transfer gate 312 can be reduced by covering a portion that is not used as the transfer path CT with an oxide film, such as an STI. <5. Examples of application to a mobile object>

[0114] The technology according to the present disclosure can be applied to various products. For example, the technology according to the present disclosure can be implemented as a device that is mounted on any type of mobile body, such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility device, an aircraft, a drone, a ship, a robot, and the like.

[0115] Fig. Figure 22 is a block diagram illustrating an example of a schematic configuration of a vehicle control system as an example of a mobile body control system to which the technology according to the present disclosure can be applied.

[0116] The vehicle control system 12000 comprises several electronic control units that are interconnected via a communication network 12001. In the case of the Fig. In the illustrated example 22, the vehicle control system 12000 includes a powertrain control unit 12010, a body control unit 12020, a vehicle exterior information detection unit 12030, a vehicle interior information detection unit 12040, and an integrated control unit 12050. Also illustrated are a microcomputer 12051, an audio / video output section 12052, and a vehicle-mounted network interface (SST) 12053 as a functional configuration of the integrated control unit 12050.

[0117] The 12010 drive system control unit controls the operation of devices related to the vehicle's drive system according to various types of programs. For example, the 12010 drive system control unit acts as a control device for a drive power generation device to generate the vehicle's drive power, such as an internal combustion engine, a drive motor, or the like; a drive power transmission mechanism to transfer the drive power to the wheels; a steering mechanism to adjust the vehicle's steering angle; a braking device to generate the vehicle's braking force; and the like.

[0118] The 12020 body control unit controls the operation of various types of devices provided for a vehicle body, according to different programs. For example, the 12020 body control unit acts as a control device for a keyless entry system, a smart key system, power windows, or various types of lights, such as headlights, reversing lights, brake lights, turn signals, fog lights, and the like. In this case, radio waves transmitted by a mobile device as an alternative to a key, or signals from various types of switches, can be input into the 12020 body control unit.The body control unit 12020 receives these input radio waves or signals and controls a door locking device, the electric window lifting device, the lights or the like of the vehicle.

[0119] The vehicle exterior information detection unit 12030 detects information about the vehicle's exterior, including the vehicle control system 12000. For example, the vehicle exterior information detection unit 12030 is connected to an imaging section 12031. The vehicle exterior information detection unit 12030 causes the imaging section 12031 to capture an image of the vehicle's exterior and receives the captured image. Based on the received image, the vehicle exterior information detection unit 12030 can perform processing to detect an object, such as a person, vehicle, obstacle, sign, symbol on a road surface, or the like, or processing to detect the distance to it.

[0120] Imaging section 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. Imaging section 12031 can output the electrical signal as an image or as information about a measured distance. Furthermore, the light received by imaging section 12031 can be visible light or non-visible light, such as infrared radiation.

[0121] The vehicle interior information detection unit 12040 detects information about the vehicle's interior. For example, the vehicle interior information detection unit 12040 is connected to a driver condition detection unit 12041, which detects the driver's condition. The driver condition detection unit 12041 includes, for example, a camera that records the driver. Based on detection information input from the driver condition detection unit 12041, the vehicle interior information detection unit 12040 can calculate the driver's fatigue level, the driver's concentration level, or determine whether the driver is dozing.

[0122] The microcomputer 12051 can calculate a control setpoint for the drive force generation device, steering mechanism, or braking device based on information about the vehicle's interior or exterior, obtained from the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040, and issue a control command to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control intended to implement functions of an Advanced Driver Assistance System (ADAS), such as collision avoidance or impact mitigation, following distance control, maintaining a vehicle speed, collision warning, lane departure warning, or similar functions.

[0123] Furthermore, the microcomputer 12051 can perform cooperative control intended for automated driving, which controls the vehicle without dependence on the operation of the driver or the like, by controlling the drive force generating device, the steering mechanism, the braking device or the like based on information about the exterior or interior of the vehicle, with this information being obtained by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040.

[0124] Furthermore, the microcomputer 12051 can issue a control command to the body control unit 12020 based on information about the vehicle's exterior, obtained by the vehicle exterior information detection unit 12030. For example, the microcomputer 12051 can perform cooperative control to prevent glare by controlling the headlights to switch from high beam to low beam according to the position of a vehicle ahead or an oncoming vehicle, as detected by the vehicle exterior information detection unit 12030.

[0125] The audio / video output section 12052 transmits an audio and / or video output signal to an output device capable of visually or audibly communicating information to an occupant of the vehicle or to an outside party. In the example from Fig. Figure 22 illustrates an audio speaker 12061, a display section 12062, and a dashboard 12063 as output devices. The display section 12062 can, for example, include an onboard display and / or a heads-up display.

[0126] Fig. Figure 23 is a diagram showing an example installation position of the imaging section 12031.

[0127] In Fig. 23 imaging sections 12101, 12102, 12103, 12104 and 12105 are included as imaging section 12031.

[0128] Imaging sections 12101, 12102, 12103, 12104, and 12105 are, for example, located at positions on the front nose, side mirrors, rear bumper, and tailgate of vehicle 12100, as well as on the upper portion of a windshield inside the vehicle. Imaging section 12101, located at the front nose, and imaging section 12105, located on the upper portion of the windshield inside the vehicle, primarily receive an image of the front of vehicle 12100. Imaging sections 12102 and 12103, located at the side mirrors, primarily receive an image of the sides of vehicle 12100. Imaging section 12104, located at the rear bumper or tailgate, primarily receives an image of the rear of vehicle 12100.The imaging section 12105 provided on the upper part of the windscreen inside the vehicle's interior is mainly used to detect a vehicle ahead, a pedestrian, an obstacle, a signal, a traffic sign, a lane or the like.

[0129] It is noted that Fig.Figure 23 illustrates an example of imaging areas for imaging sections 12101 to 12104. Imaging area 12111 represents the imaging area of ​​imaging section 12101 provided at the front nose. Imaging areas 12112 and 12113 represent the imaging areas of imaging sections 12102 and 12103 provided at the side mirrors, respectively. Imaging area 12114 represents the imaging area of ​​imaging section 12104 provided at the rear bumper or tailgate. A bird's-eye view of the vehicle 12100, as seen from above, is obtained, for example, by superimposing image data obtained from imaging sections 12101 to 12104.

[0130] At least one of the imaging sections 12101 to 12104 can have a function for obtaining distance information. For example, at least one of the imaging sections 12101 to 12104 can be a stereo camera consisting of multiple imaging elements, or it can be an imaging element with pixels for phase difference detection.

[0131] For example, the microcomputer 12051 can determine a distance to each three-dimensional object within the imaging areas 12111 to 12114 and a change in distance over time (relative speed with respect to the vehicle 12100) based on the distance information obtained from the imaging sections 12101 to 12104, and thereby, as a preceding vehicle, extract in particular a next three-dimensional object that is present in a motion path of the vehicle 12100 and that is moving in substantially the same direction as the vehicle 12100 at a predetermined speed (for example, equal to or greater than 0 km / h).Furthermore, the 12051 microcomputer can preset a following distance to be maintained from a vehicle ahead and perform automatic braking control (including following stop control), automatic acceleration control (including following start control), or similar functions. Accordingly, it is possible to implement cooperative control intended for automated driving, enabling the vehicle to drive autonomously without dependence on driver input or similar actions.

[0132] For example, the microcomputer 12051 can classify three-dimensional object data about three-dimensional objects into three-dimensional object data of a two-wheeled vehicle, a standard-sized vehicle, a large-sized vehicle, a pedestrian, a utility pole, and other three-dimensional objects based on the distance information obtained from the imaging sections 12101 to 12104, extract the classified three-dimensional object data, and use the extracted three-dimensional object data for automatic obstacle avoidance. For example, the microcomputer 12051 identifies obstacles around the vehicle 12100 as obstacles that the driver of the vehicle 12100 can visually detect and obstacles that are difficult for the driver of the vehicle 12100 to visually detect. Then, the microcomputer 12051 determines a collision risk, which indicates the likelihood of a collision with each obstacle.In a situation where the risk of collision is equal to or greater than a set value, and therefore a collision is possible, the microcomputer 12051 issues a warning to the driver via the audio speaker 12061 or the display section 12062 and initiates forced deceleration or evasive steering via the drive system control unit 12010. The microcomputer 12051 can thus assist in driving to avoid a collision.

[0133] At least one of the imaging sections 12101 to 12104 can be an infrared camera that detects infrared radiation. The microcomputer 12051 can, for example, detect a pedestrian by determining whether or not a pedestrian is present in the images captured by imaging sections 12101 to 12104. Such pedestrian detection is performed, for example, by a procedure for extracting characteristic points from the images captured by imaging sections 12101 to 12104 as infrared cameras and a procedure for determining whether or not the pedestrian is present by performing pattern matching processing on a series of characteristic points representing the object's outline.When the microcomputer 12051 determines that a pedestrian is present in the captured images from imaging sections 12101 to 12104, and accordingly detects the pedestrian, the audio / video output section 12052 controls the display section 12062 to display a square outline for highlighting the pedestrian, superimposed on the detected pedestrian. The audio / video output section 12052 can also control the display section 12062 to display a symbol or similar element representing the pedestrian at a desired position.

[0134] An example of the vehicle control system to which the technology according to the present disclosure can be applied has been described previously. The technology according to the present disclosure can be applied to imaging section 12031 and the like of the configurations described previously. By applying the imaging element of the technology according to the present disclosure to imaging section 12031, a captured image with higher image quality can be obtained, and accordingly, for example, driver fatigue can be reduced.

[0135] It is noted that embodiments to which the technology according to the present disclosure is applied are not limited to the embodiments described above and various modifications can be made without deviating from the scope of protection of the technology according to the present disclosure.

[0136] Furthermore, the present disclosure may have the following configurations. (1) An imaging element comprising the following: a pixel substrate in which multiple pixels are formed, wherein the multiple pixels each include a photoelectric conversion unit and a charge transfer unit configured to transfer a charge generated by the photoelectric conversion unit to a charge holding unit; a separation unit formed at a boundary between the photoelectric conversion unit in the pixel substrate; and an embedded electrode that is embedded adjacent to a corner of the photoelectric conversion unit in the separation unit, wherein the embedded electrode is formed as the charge holding unit of the pixels and is formed such that a size of the embedded electrode differs between a first direction and a second direction along the photoelectric conversion unit in a top view. (2) The imaging element according to (1), wherein the charge transfer unit is formed at a position where a first distance to the separation unit extending in the first direction and a second distance to the separation unit extending in the second direction are different in each of the pixels. (3) The imaging element according to (2), wherein the embedded electrode is formed with a shorter length in the second direction than in the first direction, and the charge transfer unit is formed at a position where the second distance is shorter than the first distance. (4) The imaging element according to one of (1) to (3), wherein the embedded electrode is formed as a vertical gate electrode and has a charge transfer function in a vertical direction. (5) The imaging element according to one of (1) to (4), the embedded electrode is formed at a boundary between the pixels that share the charge holding unit. (6) The imaging element according to (5), where each pixel contains one of the photoelectric conversion units, and The embedded electrode is formed at a boundary between the pixels of 2 × 2 pixels. (7) The imaging element according to (5), wherein each pixel contains several of the photoelectric conversion units, and the embedded electrode is formed at a boundary between the pixels that are adjacent in a direction orthogonal to a subdivision direction of the photoelectric conversion unit. (8) An electronic device incorporating an imaging element having the following features: a pixel substrate in which multiple pixels are formed, wherein the multiple pixels each include a photoelectric conversion unit and a charge transfer unit configured to transfer a charge generated by the photoelectric conversion unit to a charge holding unit; a separation unit formed at a boundary between the photoelectric conversion unit in the pixel substrate; and an embedded electrode that is embedded adjacent to a corner of the photoelectric conversion unit in the separation unit, wherein the embedded electrode is formed as the charge holding unit of the pixels and is formed such that a size of the embedded electrode differs between a first direction and a second direction along the photoelectric conversion unit in a top view. (9) An imaging element that includes the following: a pixel substrate in which a phase-difference pixel is formed with multiple photoelectric conversion units and multiple charge transfer units configured to transfer a charge generated by each of the photoelectric conversion units to a charge holding unit; and a circuit substrate that is stacked on the pixel substrate and in which a pixel transistor is formed, wherein the charge holding unit is formed at an intermediate position between two of the photoelectric conversion units in a top view from a stacking direction, and Each of the charge transfer units includes several vertical gate electrodes arranged above the photoelectric conversion unit, so that they span an area with a maximum potential in the photoelectric conversion unit. (10) The imaging element according to (9), wherein the charge holding unit is formed in the center of an area sandwiched between two of the photoelectric conversion units in a top view from a stacking direction, and the multiple vertical gate electrodes are arranged to span a straight line passing through the center of the charge holding unit and extending in a subdivision direction from two of the photoelectric conversion units. (11) The imaging element according to (10), wherein the phase difference pixel further includes an oxide film formed on a side surface of each of the vertical gate electrodes. (12) The imaging element according to (10) or (11), wherein the charge transfer unit further includes a planar gate electrode formed on a front surface of the pixel substrate and electrically connected to the multiple vertical gate electrodes. (13) The imaging element according to (10) or (11), wherein the charge transfer unit further includes several planar gate electrodes formed on a front surface of the pixel substrate and each electrically connected to the several vertical gate electrodes. (14) The imaging element according to one of (10) to (13), the charge holding unit is formed by ion implantation. (15) The imaging element according to one of (10) to (13), where the charge holding unit is formed as an embedded electrode. (16) An electronic device which includes an imaging element which has the following features: a pixel substrate in which a phase-difference pixel is formed with multiple photoelectric conversion units and multiple charge transfer units configured to transfer a charge generated by each of the photoelectric conversion units to a charge holding unit; and a circuit substrate that is stacked on the pixel substrate and in which a pixel transistor is formed, wherein the charge holding unit is formed at an intermediate position between two of the photoelectric conversion units in a top view from a stacking direction, and Each of the charge transfer units includes several vertical gate electrodes arranged above the photoelectric conversion unit, so that they span an area with a maximum potential in the photoelectric conversion unit. (17) A light detection device comprising the following: a first floating diffusion region corresponding to a first photodiode of a first pixel; a second floating diffusion area corresponding to a second photodiode of the first pixel; a third floating diffusion area corresponding to a first photodiode of a second pixel; a fourth floating diffusion area corresponding to a second photodiode of the second pixel; and an electrode coupled to the first floating diffusion, the second floating diffusion, the third floating diffusion and the fourth floating diffusion, wherein in a top view a first length of the electrode in a first direction is greater than a second length of the electrode in a second direction. (18) The light detection device according to (17), wherein the electrode has a cross shape in the top view. (19) The light detection device according to (17), wherein the first length in the top view comprises a first part and a second part, wherein the first part of the first length of the electrode is arranged between the first photodiode and the third photodiode in the second direction, wherein the second part of the first length of the electrode is arranged between the second photodiode and the fourth photodiode in the second direction, and wherein a length of both the first part of the first length of the electrode and the second part of the first length of the electrode in the first direction is less than the second length of the electrode. (20) The light detection device according to (17), wherein the first photodiode of the first pixel and the second photodiode of the first pixel are separated by a separation region. (21) The light detection device according to (20), wherein the separation area comprises a full trench isolation. (22) The light detection device according to (17), wherein the electrode is coupled to an amplifier transistor via at least one wiring connection. (23) The light detection device according to (17), wherein the first pixel comprises a phase difference pixel for detecting a distance to a subject. (24) The light detection device according to (17), which further comprises the following: a first transfer gate corresponding to the first photodiode of the first pixel; a second transfer gate, corresponding to the second photodiode of the first pixel; a third transfer gate corresponding to the first photodiode of the second pixel; and a fourth transfer gate, corresponding to the second photodiode of the second pixel. (25) The light detection device according to (17), wherein the first pixel is adjacent to the second pixel in the second direction. (26) The light detection device according to (17), which further comprises: a first on-chip lens corresponding to the first pixel; and a second on-chip lens that corresponds to the second pixel. (27) The light detection device according to (17), wherein the first floating diffusion region, the second floating diffusion region, the third floating diffusion region and the fourth floating diffusion region are arranged in a semiconductor substrate, and wherein at least part of the electrode is arranged in the semiconductor substrate. (28) The light detection device according to (27), wherein the part of the electrode which is arranged in the semiconductor substrate contacts the first floating diffusion region, the second floating diffusion region, the third floating diffusion region and the fourth floating diffusion region. (29) The light detection device according to (27), wherein the part of the electrode which is arranged in the semiconductor substrate contacts a first separation region which is arranged between the first pixel and the second pixel. (30) The light detection device according to (29), wherein the part of the electrode which is arranged in the semiconductor substrate contacts a second separation region which is arranged between the first photodiode and the second photodiode. (31) The light detection device according to (30), wherein the part of the electrode which is arranged in the semiconductor substrate contacts a third separation region which is arranged between the third photodiode and the fourth photodiode. (32) The light detection device according to (20), wherein the separation area unit overlaps with a part of the electrode which is arranged in a cross-sectional view in the semiconductor substrate. (33) The light detection device according to (19), wherein the second length in the top view comprises a first part and a second part, wherein the first part of the second length of the electrode is arranged between the first photodiode and the second photodiode in the first direction, wherein the second part of the second length of the electrode is arranged between the third photodiode and the fourth photodiode in the first direction, and wherein a length of both the first part of the first length of the electrode and the second part of the first length of the electrode in the first direction is greater than a length of both the first part of the second length of the electrode and the second part of the second length of the electrode in the second direction. (34) The light detection device according to (17), wherein, in the top view, a first part of the first length of the electrode is arranged between the first photodiode and the third photodiode, a first part of the second length of the electrode is arranged between the first photodiode and the second photodiode, and a length of the first part of the first length of the electrode in the first direction is greater than a length of the first part of the second length of the electrode in the second direction. (35) The light detection device according to (24), wherein a shortest distance from the first transfer gate of the first part of the first length of the electrode is greater than a shortest distance from the first transfer gate to the first part of the second length of the electrode. (36) The light detection device according to (34), wherein the first part of the first length is arranged between the first floating diffusion and the third floating diffusion, and the first part of the second length is arranged between the first floating diffusion and the second floating diffusion. (37) The light detection device according to (17), wherein the first direction is a horizontal direction in the top view and the second direction is a vertical direction in the top view. (38) The light detection device according to (17), wherein the first pixel comprises a 2-layer phase-difference pixel and wherein a pixel transistor is located in a first layer and wherein the first photodiode of the first pixel and the second photodiode of the first pixel are located in a second layer which is different from the first layer. (39) The light detection device according to (17), wherein the semiconductor substrate comprises a pixel substrate and a circuit substrate. (40) A light detection device comprising the following: a first floating diffusion region corresponding to a first photodiode of a first pixel; a second floating diffusion area corresponding to a second photodiode of the first pixel; a third floating diffusion area corresponding to a first photodiode of a second pixel; a fourth floating diffusion area corresponding to a second photodiode of the second pixel; and an electrode coupled to the first floating diffusion area, the second floating diffusion area, the third floating diffusion area and the fourth floating diffusion area, wherein the electrode has a cross shape in a top view. (41) A light detection device comprising the following: a floating diffusion; a first photodiode of a first pixel; a second photodiode of the first pixel; a first photodiode of a second pixel; a second photodiode of the second pixel; and an electrode coupled to the floating diffusion region, wherein the electrode has a cross shape in a top view. (42) The light detection device according to (41), wherein the floating diffusion comprises: a first floating diffusion region corresponding to the first photodiode of the first pixel; a second floating diffusion area corresponding to the second photodiode of the first pixel; a third floating diffusion area corresponding to the first photodiode of the second pixel; and a fourth floating diffusion area corresponding to the second photodiode of the second pixel. (43) An electronic device comprising a light detection device which includes the following: a first floating diffusion region corresponding to a first photodiode of a first pixel; a second floating diffusion area corresponding to a second photodiode of the first pixel; a third floating diffusion area corresponding to a first photodiode of a second pixel; a fourth floating diffusion area corresponding to a second photodiode of the second pixel; and an electrode coupled to the first floating diffusion, the second floating diffusion, the third floating diffusion and the fourth floating diffusion, wherein in a top view a first length of the electrode in a first direction is greater than a second length of the electrode in a second direction. (44) An electronic device comprising a light detection device which includes the following: a first floating diffusion region corresponding to a first photodiode of a first pixel; a second floating diffusion area corresponding to a second photodiode of the first pixel; a third floating diffusion area corresponding to a first photodiode of a second pixel; a fourth floating diffusion area corresponding to a second photodiode of the second pixel; and an electrode coupled to the first floating diffusion area, the second floating diffusion area, the third floating diffusion area and the fourth floating diffusion area, wherein the electrode has a cross shape in a top view. (45) An electronic device comprising a light detection device which includes the following: a floating diffusion; a first photodiode of a first pixel; a second photodiode of the first pixel; a first photodiode of a second pixel; a second photodiode of the second pixel; and an electrode coupled to the floating diffusion region, wherein the electrode has a cross shape in a top view.

[0137] It is understood by a person skilled in the art that various modifications, combinations, sub-combinations and changes may occur depending on design requirements and other factors, insofar as they fall within the scope of protection of the attached claims or their equivalents. Reference symbol list 1 Imaging device 20 sensor elements 121 pixel array unit 150 pixels 210 pixel substrate 211 PD 212 Charge transfer unit 213 pixel transistor 214 Separation Unit 215 Embedded electrode SB1 pixel substrate SB2 circuit substrate 311 PD 312 Transfer Gate 313 FD 314 FTI 315 Oxide film 321, 322 Vertical gate electrode 323, 323-1, 323-2 Planar gate electrode QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] JP 2023-123021

[0002] WO 2022 / 138914 A

[0004]

Claims

[1] Light detection device comprising: a first floating diffusion region corresponding to a first photodiode of a first pixel; a second floating diffusion area corresponding to a second photodiode of the first pixel; a third floating diffusion area corresponding to a first photodiode of a second pixel; a fourth floating diffusion area corresponding to a second photodiode of the second pixel; and an electrode coupled to the first floating diffusion, the second floating diffusion, the third floating diffusion and the fourth floating diffusion, wherein in a top view a first length of the electrode in a first direction is greater than a second length of the electrode in a second direction. [2] Light detection device according to claim 1, wherein the electrode has a cross shape in the top view. [3] Light detection device according to claim 1, wherein the first length in the top view comprises a first part and a second part, wherein the first part of the first length of the electrode is arranged between the first photodiode and the third photodiode in the second direction, wherein the second part of the first length of the electrode is arranged between the second photodiode and the fourth photodiode in the second direction, and wherein a length of both the first part of the first length of the electrode and the second part of the first length of the electrode in the first direction is less than the second length of the electrode. [4] Light detection device according to claim 1, wherein the first photodiode of the first pixel and the second photodiode of the first pixel are separated by a separation region. [5] Light detection device according to claim 4, wherein the separation area comprises a full trench isolation. [6] Light detection device according to claim 1, wherein the electrode is coupled to an amplifier transistor via at least one wiring connection. [7] Light detection device according to claim 1, wherein the first pixel comprises a phase difference pixel for detecting a distance to a subject. [8] Light detection device according to claim 1, further comprising: a first transfer gate corresponding to the first photodiode of the first pixel; a second transfer gate, corresponding to the second photodiode of the first pixel; a third transfer gate corresponding to the first photodiode of the second pixel; and a fourth transfer gate, corresponding to the second photodiode of the second pixel. [9] Light detection device according to claim 1, wherein the first pixel is adjacent to the second pixel in the second direction. [10] Light detection device according to claim 1, further comprising: a first on-chip lens corresponding to the first pixel; and a second on-chip lens that corresponds to the second pixel. [11] Light detection device according to claim 1, wherein the first floating diffusion region, the second floating diffusion region, the third floating diffusion region and the fourth floating diffusion region are arranged in a semiconductor substrate, and wherein at least part of the electrode is arranged in the semiconductor substrate. [12] Light detection device according to claim 11, wherein the part of the electrode which is arranged in the semiconductor substrate contacts the first floating diffusion region, the second floating diffusion region, the third floating diffusion region and the fourth floating diffusion region. [13] Light detection device according to claim 11, wherein the part of the electrode which is arranged in the semiconductor substrate contacts a first separation region which is arranged between the first pixel and the second pixel. [14] Light detection device according to claim 13, wherein the part of the electrode which is arranged in the semiconductor substrate contacts a second separation region which is arranged between the first photodiode and the second photodiode. [15] Light detection device according to claim 14, wherein the part of the electrode which is arranged in the semiconductor substrate contacts a third separation area which is arranged between the third photodiode and the fourth photodiode. [16] Light detection device according to claim 4, wherein the separation area overlaps with a part of the electrode which is arranged in a cross-sectional view in the semiconductor substrate. [17] Light detection device according to claim 3, wherein the second length in the top view comprises a first part and a second part, wherein the first part of the second length of the electrode is arranged between the first photodiode and the second photodiode in the first direction, wherein the second part of the second length of the electrode is arranged between the third photodiode and the fourth photodiode in the first direction, and where a length of both the first part of the first length of the electrode and the second part of the first length of the electrode in the first direction is greater than a length of both the first part of the second length of the electrode and the second part of the second length of the electrode in the second direction. [18] Light detection device according to claim 1, wherein in the top view a first part of the first length of the electrode is arranged between the first photodiode and the third photodiode, a first part of the second length of the electrode is arranged between the first photodiode and the second photodiode, a length of the first part of the first length of the electrode in the first direction is greater than a length of the first part of the second length of the electrode in the second direction. [19] Light detection device according to claim 8, wherein a shortest distance from the first transfer gate of the first part of the first length of the electrode is greater than a shortest distance from the first transfer gate to the first part of the second length of the electrode. [20] Light detection device according to claim 18, wherein the first part of the first length is arranged between the first floating diffusion and the third floating diffusion, and the first part of the second length is arranged between the first floating diffusion and the second floating diffusion. [21] Light detection device according to claim 1, wherein the first direction is a horizontal direction in the top view and the second direction is a vertical direction in the top view. [22] Light detection device according to claim 1, wherein the first pixel comprises a 2-layer phase difference pixel and wherein a pixel transistor is located in a first layer and wherein the first photodiode of the first pixel and the second photodiode of the first pixel are located in a second layer which is different from the first layer. [23] Light detection device according to claim 1, wherein the semiconductor substrate comprises a pixel substrate and a circuit substrate. [24] Light detection device comprising the following: a first floating diffusion region corresponding to a first photodiode of a first pixel; a second floating diffusion area corresponding to a second photodiode of the first pixel; a third floating diffusion area corresponding to a first photodiode of a second pixel; a fourth floating diffusion area corresponding to a second photodiode of the second pixel; and an electrode coupled to the first floating diffusion area, the second floating diffusion area, the third floating diffusion area, and the fourth floating diffusion area, the electrode has a cross shape when viewed from above. [25] Light detection device comprising: a floating diffusion; a first photodiode of a first pixel; a second photodiode of the first pixel; a first photodiode of a second pixel; a second photodiode of the second pixel; and an electrode coupled to the floating diffusion area, the electrode has a cross shape when viewed from above. [26] Light detection device according to claim 25, wherein the floating diffusion comprises: a first floating diffusion region corresponding to the first photodiode of the first pixel; a second floating diffusion area corresponding to the second photodiode of the first pixel; a third floating diffusion area corresponding to the first photodiode of the second pixel; and a fourth floating diffusion area corresponding to the second photodiode of the second pixel.

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