Semiconductor device and electronic device

Abstract

A semiconductor device according to an embodiment of the present disclosure comprises: a first substrate comprising a first semiconductor layer and a first wiring layer, which are stacked; a second substrate comprising a second semiconductor layer and a second wiring layer, which are stacked, the second wiring layer forming bond surfaces together with the first wiring layer; several first bond electrodes formed on the bond surface of the first wiring layer, each having a first bond surface; several second bond electrodes formed on the bond surface of the second wiring layer, each having a second bond surface bonded to the first bond surface of a corresponding one of the several first bond electrodes;one or more first metal layers formed between adjacent of the multiple first bond electrodes on the bond surface of the first wiring layer, having a first opposite surface facing the second substrate, the first opposite surface being recessed relative to the first bond surface towards one side of the first semiconductor layer; and one or more second metal layers formed between adjacent of the multiple second bond electrodes on the bond surface of the second wiring layer, having a second opposite surface facing the first substrate.