COMBINED SPIN-RAIL TORQUE AND SPIN TRANSMISSION TORQUE SWITCHING FOR MAGNETORESISTIVE DEVICES AND METHOD THERE FOR IT

DE602019086136T2Active Publication Date: 2026-07-01EVERSPIN TECHNOLOGIES INC

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Patent Information

Authority / Receiving Office: DE · DE
Patent Type: Patents
Current Assignee / Owner: EVERSPIN TECHNOLOGIES INC
Filing Date: 2019-07-23
Publication Date: 2026-07-01

AI Technical Summary

Technical Problem

As magnetic memory devices advance towards smaller process nodes, the decrease in shape anisotropy of MTJ bits leads to a decrease in energy barrier, affecting data retention and thermal stability, and increasing critical current, which results in periodic damage and reduced endurance.

Method used

Integration of spin-orbit torque (SOT) and spin-transfer torque (STT) switching mechanisms in magnetoresistive devices to enhance switching efficiency without high magnitudes of write current, maintaining a high energy barrier.

Benefits of technology

Improves switching efficiency and reduces critical current, enhancing the longevity and durability of magnetoresistive memory devices while maintaining data integrity.

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