DEVICE AND PROCEDURE FOR FUSION EPITAXY.

Claims

1. - 10 SftUW COWSOÌ.EKZA HkEVtTTI JAUMANKMILANO-Pia ;;;: in Casftiflo, 2 epitaxial 1C · r foreseen on], first epitaxial layer 1, is transparent for the. sparse action risiti .. 1; before a g and o to: Γ i. u. e a t a: a ο t tica p e r 1 'u s cita c! and 11 a. 1 uc e.ϋs b o c o s · t; .1 t ni s c e i η ο 11 re; ìm a d e 1 ira i t az i. ori. and d and 111 i. -nieziore, by which one can influence the spuli t; r o di e mi s s i t> i e sul tei s>; you hate. c o: n u n u t a z, i o u e »Ilio and ndications 1, - Li s]; O sit ivo for eoi'bassi a fusion, which is used to apply an epitaxial layer on a substrate, which is placed on a ropes plate,;: enteda support, characterized by the fact of eli and paralio-1 on and ntc to the p fistia (2) and at a small distance above the latter a * further gold plate (1) is provided, so that between the two plates ¢ 1, 1) a gap is formed (?), as well as by the fact that at least the two super-layers c between their neighbors del, the two plates (1, 2) are not wetted by the material (d), s p e c i a 1 m e nt e m and t o. 11 <:>, c he o c c o r r e a d d u r r e j:) e r 1 'c; ittaxia.

2. -1) i a; [> o si t i "v o s e c:.) N d o 1 a ri v e η ì! I c a z i ο n e 1, co c r a t -t e ri z z i rt o d a 1 f at t; c> c Ih. E. 1 e d u e; p i. A s t r e (1, 2) s ο η odi sp o ut e re ci p ro c auent o i nel i n at o.p.-Di s p o b i t i v o 3 e c ο η q ο la ri v e n ci i <: a z i ο n e 1, cu uc a t -terized by the fact that the bottom plate (2) ;;;> r e s o ri t a u n i.: I c av o (?) *. · ♦ * · · · é · * 1 · * · * • · · · ** »M • · * * · s · *« • * • * * »· • M t» * · ** · # · • * • II * ·· ** • «* • * * 4 * * * # * • * * * 11 srnofo consi / iem erari imm MILAN-Piazza Castello, 2 4.-Prq c e d ime nt o for fusion epitaxy, which serves to apply an epitaxial atrate on a substrate, which is at the logpiato on a plate acting as a support, characterized by the fact that a certain damaging of the plate (2) uu'alte¬ri o r e p il ae t r a (1) is foreseen, η ο n c li is from 1 to 11 o eh e a. 1 m e η o 1 ¢ 5s up e · r: t i c i f r & di lo r o v i c i. n c d e 11. e du e j ri a s t: t '¢ 5 (1, 2) η ο o fi ο η o b a j j; n ab ili from 1 ir: to t and ri. a 1. e (4) ad '3 o t: 10 · for fusional epitaxy, furthermore by the fact that the substrate (i>) is col.]. acato over the lower plate (2) and finally by the fact that that the material (4) c he s e i · ν e p e r 1 'e ;; i i t a s s i a a, 1 "a sio n e vi e n e i n t: i? o ci. o t + -t o ne 11 'in t e tv ape: dxne (p) between 1 and duθ j> i ast re (1, 2) from the opposite side to the substrate (p). b -Pro c e dlm ent o s e conci ο 1 a reven of cases one 4-, c arar -: hierised by the fact that the two plates (1, 2) are arranged so as to form a certain angle Ìpadi lo: i: o, as well as from the fact that the substrate (..>) vi e heprovided) n ì 1 * e s t r o mi t is of the plates (1, 2), which · *** • · * · · · • · * * »*» T »· · 4 * · ··» • • • III »• ·· * ·· • a • · · * • * *; * • · · i» · * ·. * * ·. ·· * * · • * «• · * 4 ·» * • «♦ * * ···» *. * * • »* * **** ·> ·» * · • * 4 · * * «· *» «!« * · · * Taken :, co 1 * opening mag; dorè ..