Silicon carbide semiconductor device and method for manufacturing a silicon carbide semiconductor device

Abstract

The present invention provides a silicon carbide semiconductor device and a method for manufacturing a silicon carbide semiconductor device, which can improve the RonA-Vth trade-off by making the impurity profile in the direction orthogonal from near the gate insulating film interface SiO2 / p-type / n-type / p-type. [Solution] The silicon carbide semiconductor device 50 comprises a first semiconductor region 2 of a first conductivity type, a second semiconductor region 3 of a second conductivity type, a third semiconductor region 7 of a first conductivity type, a fourth semiconductor region 8 of a second conductivity type, and a fifth semiconductor region 21 of a first conductivity type. The fifth semiconductor region 21 divides the second semiconductor region 3 into a first second semiconductor region 3a on the gate insulating film 9 side and a second second semiconductor region 3b on the opposite side of the gate insulating film 9. The thickness of the first second semiconductor region 3a is 30 nm or more and 100 nm or less. The current between the first electrode 13 and the second electrode 14 is controlled by controlling the carrier concentration of the fifth semiconductor region 21 by the potential of the gate electrode 10.

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