Semiconductor device and method for manufacturing the same

JP2026096931APending Publication Date: 2026-06-15SK HYNIX INC
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Patent Information

Application Number
JP2025189205
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-12-03
Filing Date
2025-11-10
Publication Date
2026-06-15

AI Technical Summary

Benefits of technology

【0007】 本発明の実施形態に係る半導体装置及びその製造方法によれば、第2の導電ラインのパターニングの際、十分な湿式洗浄が可能であり、第2の導電ライン間の電気的短絡が発生しないように改善することができる。 また、本発明の実施形態に係る半導体装置及びその製造方法によれば、可変抵抗層のパターニングの際、シャント不全発生を制御し、セレクタ層の劣化を防止できる。

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Abstract

To provide a semiconductor device and a method for manufacturing the same, which improve the completeness of the laminated structure of the variable resistance layer by directly depositing a variable resistance layer on the upper part of the first conductive line, and which allows for sufficient wet cleaning during the patterning of the second conductive line by forming a second conductive line on the upper part of the selector layer, thereby improving electrical short circuits between the second conductive lines. [Solution] The semiconductor device of this embodiment comprises a first conductive line including the upper portion of a carbon-based thin film, a variable resistor layer disposed on the first conductive line, a selector layer disposed on the variable resistor layer with a carbon-based thin film disposed on top of it, and a second conductive line disposed on the selector layer.
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