Power module, connecting member, and method for manufacturing the same.

Abstract

The present invention provides a power module equipped with a connecting member that can adjust the conductive properties and thermal stress caused by temperature changes, as a connecting member placed between a semiconductor element and a wire. [Solution] A power module 1 comprising a semiconductor element 10 and a connecting member 20, wherein the connecting member 20 comprises a first member 22 and a conductive second member 24 and has a first surface 20a and a second surface 20b, the thermal expansion coefficient of the first member 22 is smaller than that of the second member 24, the electrical resistivity of the second member 24 is lower than that of the first member 22, and the second member 24 is continuous from the first surface 20a to the second surface 20b and is electrically connected to the semiconductor element 10.

Description

Technical Field

[0001] The present disclosure relates to a power module, a connection member, a manufacturing method thereof, and the like.

Background Art

[0002] Power modules are used in various fields such as automobiles, railways, power supply equipment, and industrial equipment. In a power module, a semiconductor element can be electrically connected to a connection target using a wire (for example, see Patent Document 1 below).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In a power module, when a semiconductor element is electrically connected to a connection target using a wire (for example, a copper wire), the semiconductor element may be damaged due to stress caused by the wire. Therefore, it is conceivable to suppress contact between the wire and the semiconductor element by disposing a connection member between the semiconductor element and the wire. For such a connection member, it may be required to adjust the conductive characteristics and the thermal stress accompanying temperature changes.

[0005] One aspect of the present disclosure is to provide a power module including a connection member that can adjust conductive characteristics and thermal stress accompanying temperature changes, as a connection member disposed between a semiconductor element and a wire. Another aspect of the present disclosure is to provide a connection member disposed between a semiconductor element and a wire, which can adjust conductive characteristics and thermal stress accompanying temperature changes. Another aspect of the present disclosure is to provide a manufacturing method for such a connection member. [Means for solving the problem]

[0006] This disclosure relates to the following [1] to

[25] , etc. [1] A power module comprising a semiconductor element and a connecting member, wherein the connecting member comprises a first member and a conductive second member and has a first surface and a second surface, the thermal expansion coefficient of the first member is smaller than that of the second member, the electrical resistivity of the second member is lower than that of the first member, and the second member is continuous from the first surface to the second surface and is electrically connected to the semiconductor element. [2] The power module according to [1], wherein the thermal conductivity of the second member is higher than that of the first member. [3] The power module according to [1] or [2], wherein the first component contains at least one selected from the group consisting of iron and nickel. [4] The power module according to any one of [1] to [3], wherein the second component contains at least one selected from the group consisting of copper and aluminum. [5] The power module according to any one of [1] to [4], wherein the first member has a pair of main surfaces facing each other and a through hole penetrating between the pair of main surfaces, and the through portion constituting the second member is disposed in the through hole of the first member. [6] The power module according to [5], wherein the through-holes are arranged in each of the plurality of through-holes. [7] The power module according to [5] or [6], wherein the surface layer constituting the second member is arranged on at least one of the pair of main surfaces of the first member. [8] The power module according to any one of [1] to [4], wherein the connecting member comprises a structure having a pair of main surfaces facing each other, the structure having a first part constituting the first member and a second part constituting the second member, the first part having a pair of faces facing each other in a direction perpendicular to the direction in which the pair of main surfaces of the structure face each other, the second part being arranged on each of the pair of faces of the first part, the first part and the second part being continuous from one main surface to the other of the pair of main surfaces of the structure and extending in a direction perpendicular to the direction in which the pair of main surfaces of the structure face each other and the direction in which the pair of faces of the first part face each other. [9] The power module according to [8], wherein the surface layer constituting the second member is arranged on at least one of the pair of main surfaces of the structure.

[10] The power module according to any one of [1] to [9], further comprising a wire electrically connected to the second member on the opposite side of the connecting member from the semiconductor element.

[11] A connecting member used in a power module equipped with semiconductor elements, comprising a first member and a conductive second member, having a first surface and a second surface, wherein the thermal expansion coefficient of the first member is smaller than that of the second member, the electrical resistivity of the second member is lower than that of the first member, and the second member is continuous from the first surface to the second surface.

[12] The connecting member according to

[11] , wherein the thermal conductivity of the second member is higher than that of the first member.

[13] The connecting member according to

[11] or

[12] , wherein the first member contains at least one selected from the group consisting of iron and nickel.

[14] The connecting member according to any one of

[11] to

[13] , wherein the second member contains at least one selected from the group consisting of copper and aluminum.

[15] The connecting member according to any one of

[11] to

[14] , wherein the first member has a pair of main surfaces facing each other and a through hole penetrating between the pair of main surfaces, and the through portion constituting the second member is disposed in the through hole of the first member.

[16] The connecting member according to

[15] , wherein the through portion is arranged in each of the plurality of through holes.

[17] The connecting member according to

[15] or

[16] , wherein the surface layer constituting the second member is arranged on at least one of the pair of main surfaces of the first member.

[18] A connecting member according to any one of

[11] to

[14] , comprising a structure having a pair of main faces facing each other, wherein the structure comprises a first part constituting the first member and a second part constituting the second member, the first part having a pair of faces facing each other in a direction perpendicular to the direction of opposition of the pair of main faces of the structure, the second part being arranged on each of the pair of faces of the first part, the first part and the second part being continuous from one main face to the other of the pair of main faces of the structure and extending in a direction perpendicular to the direction of opposition of the pair of main faces of the structure and the direction of opposition of the pair of faces of the first part.

[19] The connecting member according to

[18] , wherein the surface layer constituting the second member is arranged on at least one of the pair of main surfaces of the structure. A method for manufacturing a connecting member as described in any one of

[20] ,

[15] , to

[17] , comprising the step of forming the through portion of the second member in the through hole of the first member.

[21] The method for manufacturing a connecting member according to

[20] , further comprising the step of forming a surface layer constituting the second member on at least one of the pair of main surfaces of the first member.

[22] A method for manufacturing a connecting member, comprising the step of cutting a laminate L1 comprising a layer X1 having a pair of main surfaces facing each other and a layer X2 disposed on one of the pair of main surfaces of the layer X1 in a direction perpendicular to the one main surface of the layer X1, thereby obtaining a structure as the connecting member described in

[18] or

[19] having a part of the layer X1 as a first part and a part of the layer X2 as a second part.

[23] The method for manufacturing a connecting member according to

[22] , further comprising the step of obtaining the laminate L1 by stacking a plurality of laminates L2 having the layer X1 and the layer X2.

[24] The method for manufacturing a connecting member according to

[23] , wherein the laminate L2 further comprises a layer X3 disposed on the other main surface of the pair of main surfaces of the layer X1, and the structure further comprises a part of the layer X3 as a second part.

[25] A method for manufacturing a connecting member according to any one of

[22] to

[24] , further comprising the step of forming a surface layer constituting the second member on at least one of the pair of main surfaces of the structure. [Effects of the Invention]

[0007] According to one aspect of this disclosure, a power module can be provided that includes a connecting member, which is disposed between a semiconductor element and a wire, and which has adjustable conductivity and thermal stress due to temperature changes. According to another aspect of this disclosure, a connecting member disposed between a semiconductor element and a wire can be provided, which has adjustable conductivity and thermal stress due to temperature changes. According to yet another aspect of this disclosure, a method for manufacturing such a connecting member can be provided. [Brief explanation of the drawing]

[0008] [Figure 1] Figure 1 is a schematic cross-sectional view showing an example of a power module. [Figure 2] Figure 2 is a schematic cross-sectional view showing another example of a power module. [Figure 3]FIG. 3 is a schematic plan view showing an example of a connection member. [Figure 4] FIG. 4 is a schematic plan view for explaining an arrangement mode of the connection member on the semiconductor element. [Figure 5] FIG. 5 is a schematic cross-sectional view for explaining an example of a manufacturing method of the connection member. [Figure 6] FIG. 6 is a schematic cross-sectional view for explaining an example of a manufacturing method of the connection member. [Figure 7] FIG. 7 is a schematic cross-sectional view for explaining an example of a manufacturing method of the connection member. MODE FOR CARRYING OUT THE INVENTION

[0009] Hereinafter, embodiments of the present disclosure will be described. However, the present disclosure is not limited to the following embodiments, and can be variously modified and implemented within the scope of the gist.

[0010] In this specification, a numerical range indicated using "~" indicates a range including the numerical values described before and after "~" as the minimum value and the maximum value, respectively. "A or more" of a numerical range means A and a range exceeding A. "A or less" of a numerical range means A and a range less than A. In the numerical ranges described stepwise in this specification, the upper limit value or the lower limit value of a numerical range at a certain step can be arbitrarily combined with the upper limit value or the lower limit value of numerical ranges at other steps. "A or B" means that either A or B may be included, and both may be included. The materials exemplified in this specification can be used alone or in combination of two or more, unless otherwise specified. The term "layer" includes not only a structure formed over the entire surface when observed as a plan view, but also a structure formed partially. The term "step" includes not only an independent step, but also this term if the intended action of the step is achieved even when it cannot be clearly distinguished from other steps.

[0011] The power module according to this embodiment includes a semiconductor element and a connection member. The connection member includes a first member and a conductive second member, and has a first surface and a second surface. The thermal expansion coefficient of the first member is smaller than that of the second member, the electrical resistivity of the second member is lower than that of the first member, and the second member is continuous from the first surface to the second surface and is electrically connected to the semiconductor element.

[0012] The connection member according to this embodiment is a connection member used in a power module including a semiconductor element. The connection member according to this embodiment includes a first member and a conductive second member, and has a first surface and a second surface. The thermal expansion coefficient of the first member is smaller than that of the second member, the electrical resistivity of the second member is lower than that of the first member, and the second member is continuous from the first surface to the second surface. Hereinafter, in some cases, the connection member according to this embodiment will be simply referred to as the "connection member".

[0013] According to the power module and the connection member according to this embodiment, by electrically connecting one of the first surface and the second surface of the connection member to the semiconductor element and electrically connecting the other of the first surface and the second surface of the connection member to the wire, the semiconductor element and the wire can be electrically connected via the second member continuous from the first surface to the second surface.

[0014] When using a member composed of a single material as the connection member disposed between the semiconductor element and the wire, it may be difficult to adjust the conductive characteristics and the thermal stress accompanying temperature change. On the other hand, according to the power module and the connection member according to this embodiment, since the thermal expansion coefficient of the first member is smaller than that of the second member and the electrical resistivity of the second member is lower than that of the first member, by adjusting the thermal expansion coefficients and the electrical resistivities of the first member and the second member, the conductive characteristics and the thermal stress accompanying temperature change can be adjusted.

[0015] According to the power module and connecting member of this embodiment, contact between the wire and the semiconductor element is suppressed, thereby preventing damage to the semiconductor element due to stress caused by the wire.

[0016] The power module according to this embodiment comprises a semiconductor element and a connecting member (connecting member according to this embodiment). The power module according to this embodiment may comprise a single semiconductor element and a single connecting member. The power module according to this embodiment may comprise a plurality of semiconductor elements and a plurality of connecting members. The connecting member may be arranged on the semiconductor element.

[0017] The semiconductor element may contain silicon atoms and may contain silicon compounds (e.g., silicon carbide). The semiconductor element may have a first main surface located on the side of the connecting member and a second main surface located on the opposite side of the connecting member (a main surface facing the first main surface). The first main surface of the semiconductor element can be electrically connected to the connecting member. The first main surface of the semiconductor element may have a gate portion and a source portion. The gate portion and the source portion, respectively, may be electrically connected to a wire via the connecting member.

[0018] The connecting member comprises a first member and a conductive second member, wherein the thermal expansion coefficient of the first member is smaller than that of the second member, and the electrical resistivity of the second member is lower than that of the first member. The first member and the second member are separate from each other. The connecting member may comprise a single first member or a plurality of first members. The connecting member may comprise a single second member or a plurality of second members. The connecting member may further comprise members other than the first member and the second member.

[0019] The thermal expansion coefficient of the first member may be within the following ranges (the unit "ppm / °C" is omitted): The thermal expansion coefficient of the first member may be 0.01 or greater, 0.05 or greater, 0.10 or greater, 0.30 or greater, 0.50 or greater, 0.80 or greater, or 1.00 or greater. The thermal expansion coefficient of the first member may be 50.00 or less, 30.00 or less, 10.00 or less, 8.00 or less, 5.00 or less, 4.00 or less, 3.00 or less, 2.00 or less, or 1.50 or less. From these perspectives, the thermal expansion coefficient of the first member may be 0.01~50.00, 0.01~5.00, 0.01~3.00, 0.10~50.00, 0.10~5.00, 0.10~3.00, 1.00~50.00, 1.00~5.00, or 1.00~3.00. The thermal expansion coefficient of the first member may be the average thermal expansion coefficient at 25~150°C (heating rate: 5°C / min).

[0020] The thermal expansion coefficient of the second member may be within the following ranges (the unit "ppm / °C" is omitted): The thermal expansion coefficient of the second member may be 0.10 or greater, 0.50 or greater, 1.00 or greater, 3.00 or greater, 5.00 or greater, 8.00 or greater, 10.00 or greater, 12.00 or greater, or 15.00 or greater. The thermal expansion coefficient of the second member may be 100.00 or less, 80.00 or less, 50.00 or less, 40.00 or less, 30.00 or less, 25.00 or less, 20.00 or less, or 18.00 or less. From these perspectives, the thermal expansion coefficient of the second member may be 0.10~100.00, 0.10~50.00, 0.10~20.00, 1.00~100.00, 1.00~50.00, 1.00~20.00, 10.00~100.00, 10.00~50.00, or 10.00~20.00. The thermal expansion coefficient of the second member may be the average thermal expansion coefficient at 25~150°C (heating rate: 5°C / min).

[0021] The first component may be conductive or insulating. The electrical resistivity (volume resistivity at 20°C) of the first component may be within the following ranges (the unit "μΩ·m" is omitted): The electrical resistivity of a conductive first component may be 0.01 or higher, 0.05 or higher, 0.10 or higher, greater than 0.10, 0.30 or higher, 0.50 or higher, 0.70 or higher, or 0.75 or higher. The electrical resistivity of a conductive first component may be 100.00 or lower, 50.00 or lower, 10.00 or lower, 5.00 or lower, 4.00 or lower, 3.00 or lower, 2.00 or lower, 1.00 or lower, 0.90 or lower, or 0.85 or lower. From these viewpoints, the electrical resistivity of the conductive first member may be 0.01 to 100.00, 0.01 to 10.00, 0.01 to 1.00, 0.10 to 100.00, 0.10 to 10.00, 0.10 to 1.00, 0.50 to 100.00, 0.50 to 10.00, or 0.50 to 1.00. The electrical resistivity of the insulating first member is 1.00 × 10⁻⁶. 6 That's all.

[0022] Regarding the constituent materials of the first member, the first member may contain inorganic materials or organic materials. The first member may contain conductive materials or metallic materials. The metallic materials may contain elemental metals, metallic alloys, or metallic compounds. Examples of metallic elements in the metallic materials include copper, silver, gold, aluminum, iron, nickel, titanium, palladium, silicon, cobalt, chromium, platinum, etc. The first member may contain at least one selected from the group consisting of iron and nickel, an alloy containing at least one selected from the group consisting of iron and nickel, an alloy containing iron and nickel, or Invar (Invar alloy). The first member does not have to contain copper. The first member may contain insulating materials, ceramics, or resin materials. Examples of ceramics include aluminum oxide, aluminum nitride, and silicon nitride. The constituent materials of the first member can be used individually or in combination of two or more types. The first component may contain a resin material and a ceramic (e.g., a ceramic filler).

[0023] The second component is conductive. The electrical resistivity (at 20°C, volume resistivity) of the second component may be within the following ranges (the unit "nΩ·m" is omitted): The electrical resistivity of the second component may be 0.10 or higher, 0.50 or higher, 1.00 or higher, 3.00 or higher, 5.00 or higher, 8.00 or higher, 10.00 or higher, 12.00 or higher, or 15.00 or higher. The electrical resistivity of the second component may be 100.00 or lower, less than 100.00, 80.00 or lower, 50.00 or lower, 40.00 or lower, 30.00 or lower, 25.00 or lower, or 20.00 or lower. From these perspectives, the electrical resistivity of the second component may be 0.10-100.00, 0.10-50.00, 0.10-20.00, 1.00-100.00, 1.00-50.00, 1.00-20.00, 10.00-100.00, 10.00-50.00, or 10.00-20.00.

[0024] Regarding the constituent materials of the second member, the second member may contain inorganic materials or organic materials. The second member may contain metallic materials. The metallic materials may contain elemental metals, metal alloys, or metal compounds. Examples of metallic elements in the metallic materials include copper, silver, gold, aluminum, iron, nickel, titanium, palladium, silicon, cobalt, chromium, platinum, etc. The second member may contain at least one selected from the group consisting of copper and aluminum. The second member may be a sintered body containing metal (metallic element). The sintered body may be porous. Examples of metal (metallic element) in the sintered body include copper, silver, etc. The second member may contain at least one selected from the group consisting of copper and silver, or it may be a sintered body containing at least one selected from the group consisting of copper and silver. The constituent materials of the second member can be used individually or in combination of two or more.

[0025] The thermal conductivity of the second member may be higher than that of the first member. In this case, the heat dissipation characteristics can be adjusted in addition to the conductive properties and thermal stress associated with temperature changes, and the heat generated from the semiconductor element can be easily dissipated through the second member, which is continuous from the first surface to the second surface of the connecting member. The thermal conductivity of the first member (at 20°C) and the thermal conductivity of the second member (at 20°C) may be within the following ranges (the unit "W / (m·K)" is omitted). The thermal conductivity of the first member may be 1 or more, 3 or more, 5 or more, 8 or more, 10 or more, or 12 or more. The thermal conductivity of the first member may be 100 or less, 80 or less, 50 or less, 40 or less, 30 or less, 20 or less, or 15 or less. From these perspectives, the thermal conductivity of the first member may be 1-100, 1-50, 1-20, 5-100, 5-50, 5-20, 10-100, 10-50, or 10-20. The thermal conductivity of the second member may be 10 or more, 50 or more, 100 or more, greater than 100, 150 or more, 200 or more, 250 or more, 300 or more, or 350 or more. The thermal conductivity of the second member may be 3000 or less, 2000 or less, 1000 or less, 800 or less, 500 or less, 450 or less, or 400 or less. From these perspectives, the thermal conductivity of the second member may be 10-3000, 10-1000, 10-500, 100-3000, 100-1000, 100-500, 300-3000, 300-1000, or 300-500.

[0026] The mass-based or volume-based content of the first or second component may be within the following ranges based on the entire connecting component: The content of the first or second component may be 10% or more, 20% or more, 30% or more, 40% or more, 50% or more, more than 50%, 60% or more, 70% or more, 80% or more, or 90% or more. The content of the first or second component may be 90% or less, 80% or less, 70% or less, 60% or less, 50% or less, less than 50%, 40% or less, 30% or less, 20% or less, or 10% or less. From these perspectives, the content of the first or second component may be 10-90%, 30-90%, 50-90%, 70-90%, 10-70%, 30-70%, 50-70%, 10-50%, 30-50%, or 10-30%.

[0027] The connecting member has a first surface and a second surface. The first surface and the second surface may or may not face each other. The first surface and the second surface may be a pair of main surfaces facing each other in a layered connecting member. When the first surface and the second surface face each other, the length between the first surface and the second surface may be shorter than the maximum diameter of at least one of the first surface and the second surface.

[0028] At least one selected from the group consisting of the first member and the second member may constitute at least one of the first and second faces of the connecting member (at least one of the first and second faces may contain at least one selected from the group consisting of the first member and the second member), at least one selected from the group consisting of the first member and the second member may constitute at least one of the first and second faces (at least one of the first and second faces may contain only at least one selected from the group consisting of the first member and the second member), and at least one selected from the group consisting of the first member and the second member may constitute the first face (on the first face, the first member and the second There may be at least one selected from the group consisting of the first and second members), only at least one selected from the group consisting of the first and second members may constitute the first surface (in the first surface, only at least one selected from the group consisting of the first and second members may exist), at least one selected from the group consisting of the first and second members may constitute the second surface (in the second surface, at least one selected from the group consisting of the first and second members may exist), and only at least one selected from the group consisting of the first and second members may constitute the second surface (in the second surface, at least one selected from the group consisting of the first and second members may exist). Members other than the first and second members may constitute at least one of the first and second surfaces (in at least one of the first and second surfaces, members other than the first and second members may exist). The connecting member may have surfaces other than the first and second surfaces (for example, surfaces perpendicular to each of the opposing first and second surfaces).

[0029] The second member is continuous from the first surface to the second surface in the connecting member. The second member may extend linearly from the first surface to the second surface, or it may meander between the first and second surfaces to be continuous from the first surface to the second surface. In the power module according to this embodiment, the second member is electrically connected to a semiconductor element, and is electrically connected to the semiconductor element on one of the first and second surfaces. In the power module according to this embodiment, the second member may be electrically connected to a wire, and is electrically connected to the wire on the other of the first and second surfaces.

[0030] The connecting member may be in a configuration Z1 in which the first member has a pair of main surfaces facing each other and a through hole P11 penetrating between the pair of main surfaces, and a through portion P12 constituting the second member is disposed in the through hole P11 of the first member. The through hole P11 and the through portion P12 are continuous from one main surface to the other of the pair of main surfaces of the first member and may extend linearly from one main surface to the other of the pair of main surfaces of the first member. The cross-sectional shape of the through hole P11 and the through portion P12 is not particularly limited. The first member may be a layered member. The first member may have a plurality of through holes P11. The through portion P12 may be disposed in each of the plurality of through holes P11 (the through hole P11 may have a plurality of through holes P11 in which the through portion P12 is disposed). As the constituent material of the through portion P12, the material described above as the constituent material of the second member can be used. For example, the through portion P12 may contain at least one material selected from the group consisting of copper and aluminum.

[0031] In the connecting member of embodiment Z1, the surface layer L constituting the second member may be arranged on at least one of the pair of main surfaces of the first member. In this case, the second member includes the through-hole P12 and the surface layer L. The arrangement of the surface layer L facilitates the securing of electrical and thermal paths and improves adhesion with the member in contact with the connecting member. The surface layer L may have at least one of the first surface and the second surface of the connecting member. When the surface layer L is arranged on only one of the pair of main surfaces of the first member, the surface layer L has one of the first surface and the second surface of the connecting member. When the surface layer L is arranged on both of the pair of main surfaces of the first member, one surface layer L has the first surface of the connecting member and the other surface layer L has the second surface of the connecting member.

[0032] The surface layer L may be separate from the through-hole P12 of the second member and may be in contact with the through-hole P12 (see, for example, Figure 1 described later), or it may be integral with the through-hole P12 of the second member (see, for example, Figure 2(a) described later). The surface layer L, which is separate from the through-hole P12, may be made of a different material than the through-hole P12, may have a different material composition than the through-hole P12, may be made of the same material as the through-hole P12, or may have the same material composition as the through-hole P12. The surface layer L, which is integral with the through-hole P12, may be made of the same material as the through-hole P12, or may have the same material composition as the through-hole P12. As the constituent material of the surface layer L, the materials described above as constituent materials of the second member can be used. For example, the surface layer L may contain at least one selected from the group consisting of copper and aluminum. When a surface layer L separate from the through-hole P12 is arranged on one of a pair of main surfaces of the first member, and a surface layer L separate from the through-hole P12 or a surface layer L integrated with the through-hole P12 is arranged on the other of a pair of main surfaces of the first member, the surface layers L arranged on the pair of main surfaces may be made of different materials and may have different material compositions, or they may be made of the same material and may have the same material composition. The thickness of the surface layers L arranged on the pair of main surfaces may be the same or different.

[0033] In the connecting member of embodiment Z1, the surface layer L does not necessarily have to be placed on both of the pair of main surfaces of the first member (see, for example, Figure 2(b) described later). In this case, the wire may be in contact with the penetration P12 of the second member on one of the pair of main surfaces of the first member.

[0034] In the connecting member of embodiment Z1, the first member may be perforated metal, expanded metal, wire mesh, a collection of metal fibers (for example, metal wool, metal felt, or other metal fiber nonwoven fabrics). The connecting member of embodiment Z1 may be formed by rolling a member for obtaining the second member while placing the member for obtaining the second member on at least one of a pair of main surfaces of the first member having a through hole P11, thereby forming a second member including a through portion P12 and a surface layer L.

[0035] The connecting member comprises a structure ST having a pair of main surfaces facing each other, wherein the structure ST has a first portion P21 constituting a first member of the connecting member and a second portion P22 constituting a second member of the connecting member, the first portion P21 has a pair of surfaces facing each other in directions that intersect (e.g., orthogonal) in the direction of opposition of the pair of main surfaces of the structure ST, and the second portion P22 is arranged on at least one of the pair of surfaces of the first portion P21, and the first portion P21 and the second portion P22 may be continuous from one main surface to the other of the pair of main surfaces of the structure ST in a configuration Z2.

[0036] The first portion P21 and the second portion P22 may extend linearly from one main surface to the other on a pair of main surfaces of the structure ST. The first portion P21 and the second portion P22 may extend in a direction that intersects (e.g., orthogonal) with the opposing direction of the pair of main surfaces of the structure ST and the opposing direction of the pair of surfaces of the first portion P21. If the structure ST has a plurality of first portions P21, the second portions P22 may be arranged between the first portions P21, and a plurality of second portions P22 may be arranged between the first portions P21. If the structure ST has a plurality of second portions P22, the first portions P21 may be arranged between the second portions P22, and a plurality of first portions P21 may be arranged between the second portions P22. The second portions P22 may be arranged on each of the pair of surfaces of the first portion P21. In this case, the second part P22 located on one of the pair of faces of the first part P21, and the second part P22 located on the other of the pair of faces of the first part P21, may be separate from each other. The connecting member of embodiment Z2 may be a structure ST, or it may be a structure ST and other parts. When the connecting member of embodiment Z2 is a structure ST, the pair of main faces of the structure ST may correspond to the first and second faces of the connecting member.

[0037] In the connecting member of embodiment Z2, the surface layer L constituting the second member may be arranged on at least one of the pair of main surfaces of the structure ST. In this case, the second member includes the second portion P22 of the structure ST and the surface layer L. The arrangement of the surface layer L facilitates the securing of electrical and thermal paths and improves the adhesion with the member in contact with the connecting member. The surface layer L may have at least one of the first surface and the second surface of the connecting member. When the surface layer L is arranged on only one of the pair of main surfaces of the structure ST, the surface layer L has one of the first surface and the second surface of the connecting member. When the surface layer L is arranged on both of the pair of main surfaces of the structure ST, one surface layer L has the first surface of the connecting member and the other surface layer L has the second surface of the connecting member.

[0038] The surface layer L may be separate from the second part P22 of the structure ST, may be in contact with the second part P22, or may be integral with the second part P22. The surface layer L, which is separate from the second part P22, may be made of a different material and may have a different material composition than the second part P22, may be made of the same material as the second part P22, or may have the same material composition as the second part P22. The surface layer L, which is integral with the second part P22, may be made of the same material and may have the same material composition as the second part P22. As the constituent material of the surface layer L, the materials described above as constituent materials of the second part P22 can be used. For example, the surface layer L may contain at least one selected from the group consisting of copper and aluminum. When a surface layer L separate from the second part P22 is located on one of a pair of main surfaces of the structure ST, and a surface layer L separate from the second part P22 or a surface layer L integrated with the second part P22 is located on the other of a pair of main surfaces of the structure ST, the surface layers L located on the pair of main surfaces may be made of different materials and have different material compositions, or they may be made of the same material and have the same material composition. The thicknesses of the surface layers L located on the pair of main surfaces may be the same or different.

[0039] In the connecting member of embodiment Z2, the surface layer L does not need to be placed on both of the pair of main surfaces of the structure ST (see, for example, Figure 7(b) described later). In this case, the wire may be in contact with the second portion P22 on one of the pair of main surfaces of the structure ST.

[0040] The second member of the connecting member may be electrically connected to the gate portion of the semiconductor element and to the source portion of the semiconductor element on the semiconductor element side of the first and second surfaces of the connecting member. The second member of the connecting member may include a through portion P12 (Aspect Z1) or a second portion P22 (Aspect Z2) electrically connected to the gate portion of the semiconductor element on the semiconductor element side of the first and second surfaces of the connecting member, and may include a through portion P12 (Aspect Z1) or a second portion P22 (Aspect Z2) electrically connected to the source portion of the semiconductor element. The second member of the connecting member may include a surface portion L (Aspect Z1 or Aspect Z2) electrically connected to the gate portion of the semiconductor element and to the source portion of the semiconductor element on the semiconductor element side of the first and second surfaces of the connecting member. When viewed from a direction perpendicular to the main surface of the first member, the surface layer L (aspect Z1 or aspect Z2) electrically connected to the gate portion of the semiconductor element may have an area greater than or equal to the area of ​​the gate portion, may have an area greater than or equal to the area of ​​the gate portion, may cover at least a part of the gate portion, may cover the entire gate portion, or may not cover a part of the gate portion. When viewed from a direction perpendicular to the main surface of the first member, the surface layer L (aspect Z1 or aspect Z2) electrically connected to the source portion of the semiconductor element may have an area greater than or equal to the area of ​​the source portion, may have an area greater than or equal to the area of ​​the source portion, may cover at least a part of the source portion, may cover the entire source portion, or may not cover a part of the source portion.

[0041] The configuration of the connecting member is not limited to the configurations of embodiments Z1 and Z2 described above, and may be of various types. For example, the connecting member may be configured such that the second member has a pair of main surfaces facing each other and a through hole penetrating between the pair of main surfaces, and the through portion constituting the first member is positioned in the through hole of the second member.

[0042] The power module according to this embodiment may include a metal member A (for example, a layered metal member) that is in contact with the semiconductor element between the semiconductor element and the connecting member. The power module according to this embodiment may also include a metal member B (for example, a layered metal member) that is in contact with the semiconductor element on the side opposite to the connecting member. At least one metal material selected from the group consisting of metal member A and metal member B may include elemental metals, metal alloys, and metal compounds. Examples of metal elements in the metal material include copper, silver, gold, aluminum, iron, nickel, titanium, palladium, silicon, cobalt, chromium, platinum, and the like.

[0043] The power module according to this embodiment may include a metal member C (for example, a layered metal member) in contact with a second member of the connecting member between the semiconductor element and the connecting member. The metal member C may be in contact with the metal member A. The metal material of the metal member C may include elemental metals, metal alloys, or metal compounds. Examples of metal elements in the metal material include copper, silver, gold, aluminum, iron, nickel, titanium, palladium, silicon, cobalt, chromium, platinum, etc. The metal member C may be a sintered body containing metal (metal element). The sintered body may be porous. Examples of metal (metal element) in the sintered body include copper, silver, etc. The metal member C may contain at least one selected from the group consisting of copper and silver, or it may be a sintered body containing at least one selected from the group consisting of copper and silver.

[0044] The power module according to this embodiment may include a base material. The base material can support various components such as semiconductor elements. The base material may support a single semiconductor element or a plurality of semiconductor elements. The base material may be composed of a single component or a plurality of components. The base material may have an insulating member and a metal member D1 (for example, a layered metal member) disposed on the semiconductor element side relative to the insulating member. In this case, the insulating member and the metal member D1 may be in contact. The metal member D1 may be composed of a plurality of components. For example, the metal member D1 may include a metal member D11 electrically connected to the semiconductor element side of the first and second surfaces of the connecting member, and a metal member D12 electrically connected to the surface of the first and second surfaces of the connecting member opposite to the semiconductor element. The metal member D11 may be located between the semiconductor element and the insulating member. The metal member D12 may be electrically connected via a wire to the surface of the first and second surfaces of the connecting member opposite to the semiconductor element. The substrate may include an insulating member, a metal member D1 (e.g., a layered metal member) disposed on the semiconductor element side relative to the insulating member, and a metal member D2 (e.g., a layered metal member) disposed on the opposite side of the insulating member from the semiconductor element. In this case, the insulating member may be in contact with at least one selected from the group consisting of metal member D1 and metal member D2. The insulating member may contain ceramic. Examples of constituent materials for the insulating member include aluminum oxide, aluminum nitride, and silicon nitride. Examples of metal elements constituting at least one selected from the group consisting of metal member D1 and metal member D2 include copper and aluminum.

[0045] The power module according to this embodiment may include a metal member E (for example, a layered metal member) in contact with the substrate (for example, a metal member D1 of the substrate) between the semiconductor element and the substrate. The metal member E may be in contact with the metal member B. The metal material of the metal member E may include elemental metals, metal alloys, or metal compounds. Examples of metal elements in the metal material include copper, silver, gold, aluminum, iron, nickel, titanium, palladium, silicon, cobalt, chromium, platinum, etc. The metal member E may be a sintered body containing metal (metal element). The sintered body may be porous. Examples of metal (metal element) in the sintered body include copper, silver, etc. The metal member E may contain at least one selected from the group consisting of copper and silver, or it may be a sintered body containing at least one selected from the group consisting of copper and silver.

[0046] The power module according to this embodiment may include a wire electrically connected to a second member on the side of the connecting member opposite to the semiconductor element. The wire may be a metal wire. Examples of metal wires include copper wire and aluminum wire. The wire (for example, one end of the wire) can be electrically connected to the second member on the first surface and the second surface of the connecting member opposite to the semiconductor element. In the connecting member of embodiment Z1 or embodiment Z2, the wire may be in contact with the surface layer L of the second member. The wire (for example, the other end of the wire) can be electrically connected to a connection target which is the object to be electrically connected to the semiconductor element, for example, it can be electrically connected to a metal member D1 of the base material, and it can be electrically connected to a metal member D12 of the base material. In this case, the power module according to this embodiment may include a metal member (for example, a layered metal member) between the metal member D1 (for example, metal member D12) and the wire.

[0047] Figure 1 is a schematic cross-sectional view showing an example of a power module. The power module 1 in Figure 1 comprises a semiconductor element 10, a connecting member 20, a base material 30, a wire 40, and metal members A, B, C, and E.

[0048] The semiconductor element 10 has a main surface 10a (the first main surface described above) located on the side of the connecting member 20, and a main surface 10b (the second main surface described above) located on the opposite side of the connecting member 20. The main surface 10a is electrically connected to the connecting member 20.

[0049] The connecting member 20 is placed on the semiconductor element 10. The connecting member 20 comprises a first member 22 and a conductive second member 24. The connecting member 20 has a first surface 20a located on the side facing the semiconductor element 10 and a second surface 20b located on the opposite side from the semiconductor element 10. The thermal expansion coefficient of the first member 22 is smaller than that of the second member 24, and the electrical resistivity of the second member 24 is lower than that of the first member 22.

[0050] The connecting member 20 has the above-described embodiment Z1. The first member 22 has a pair of main surfaces 22a and 22b facing each other, and a plurality of through holes 22c (the above-described through holes P11) penetrating between the pair of main surfaces 22a and 22b. The main surface 22a is located on the semiconductor element 10 side, and the main surface 22b is located on the opposite side from the semiconductor element 10. The second member 24 includes a plurality of through portions 24a (the above-described through portions P12) arranged in the plurality of through holes 22c of the first member 22, a surface layer portion 24b (the above-described surface layer portion L) arranged on the main surface 22a of the first member 22, and a surface layer portion 24c (the above-described surface layer portion L) arranged on the main surface 22b of the first member 22. The plurality of through portions 24a are arranged regularly, for example, as shown in Figure 3, which will be described later. The through-hole 24a extends linearly from the main surface 22a to the main surface 22b of the first member 22. The surface layers 24b and 24c are separate from the through-hole 24a. The surface layer 24b is in contact with the through-hole 24a on the main surface 22a of the first member 22. The surface of the surface layer 24b facing the semiconductor element 10 corresponds to the first surface 20a of the connecting member 20, and the surface of the surface layer 24b opposite to the semiconductor element 10 is in contact with the main surface 22a of the first member 22. The surface layer 24c is in contact with the through-hole 24a on the main surface 22b of the first member 22. The surface of the surface layer 24c opposite to the semiconductor element 10 corresponds to the second surface 20b of the connecting member 20, and the surface of the surface layer 24c facing the semiconductor element 10 is in contact with the main surface 22b of the first member 22.

[0051] Metal member A is in contact with the semiconductor element 10 (main surface 10a of the semiconductor element 10) between the semiconductor element 10 and the connecting member 20. Metal member B is in contact with the semiconductor element 10 (main surface 10b of the semiconductor element 10) on the side opposite to the connecting member 20 relative to the semiconductor element 10. Metal member C is in contact with the connecting member 20 and metal member A between the semiconductor element 10 and the connecting member 20. The base material 30 supports various members such as the semiconductor element 10. The base material 30 includes an insulating member 32, a metal member D1 that is in contact with the insulating member 32 on the semiconductor element 10 side relative to the insulating member 32, and a metal member D2 that is in contact with the insulating member 32 on the side opposite to the semiconductor element 10 relative to the insulating member 32. Metal member D1 includes a metal member D11 electrically connected to the first surface 20a of the connecting member 20, and a metal member D12 electrically connected to the second surface 20b of the connecting member 20. Metal member D11 is located between the semiconductor element 10 and the insulating member 32. Metal member D12 is electrically connected to the second surface 20b of the connecting member 20 via a wire 40. Metal member E is in contact with metal member B and metal member D11 of the base material 30 between the semiconductor element 10 and the base material 30.

[0052] In the power module 1, the second member 24 includes a through portion 24a that extends linearly from the main surface 22a to the main surface 22b of the first member 22, a surface layer portion 24b that has the first surface 20a of the connecting member 20 and is in contact with the main surface 22a of the first member 22, and a surface layer portion 24c that has the second surface 20b of the connecting member 20 and is in contact with the main surface 22b of the first member 22. As a result, in the power module 1, the semiconductor element 10 and the wire 40 can be electrically connected via the second member 24.

[0053] Figure 2 is a schematic cross-sectional view showing another example of a power module. Power module 1a in Figure 2(a) has the same configuration as power module 1, except that the surface layers 24b and 24c of the second member 24 are integrated with the through-hole 24a. In power module 1a, as in power module 1, the semiconductor element 10 and the wire 40 can be electrically connected via the second member 24.

[0054] The power module 1b in Figure 2(b) has the same configuration as power module 1, except that the second member 24 does not include the surface layers 24b and 24c. In power module 1b, the main surface 22a of the first member 22 corresponds to the first surface 20a of the connecting member 20, and the main surface 22b of the first member 22 corresponds to the second surface 20b of the connecting member 20. The second member 24 is composed of a plurality of through-holes 22c of the first member 22 and through-holes 24a arranged therein. The through-holes 24a constituting the second member 24 extend linearly from the main surface 22a to the main surface 22b of the first member 22. As a result, the second member 24 is continuous from the first surface 20a to the second surface 20b of the connecting member 20, and in power module 1b, the semiconductor element 10 and the wire 40 can be electrically connected via the second member 24.

[0055] Figure 3 is a schematic plan view showing an example of a connecting member. Figure 4 is a schematic plan view illustrating the arrangement of the connecting member on a semiconductor element. The connecting members in Figures 3 and 4 have the configuration Z1 described above. Figure 4(a) shows a semiconductor element, and Figures 4(b), (c), and (d) show the state in which the connecting member is arranged on the semiconductor element. In Figures 3 and 4, the direction perpendicular to the plane of the paper corresponds to the opposing direction of the pair of main surfaces of the first member, and the front of the paper corresponds to the side of the connecting member away from the semiconductor element. In Figures 3 and 4, the illustration of members other than the semiconductor element and the connecting member is omitted.

[0056] The connecting member 20c in Figure 3(a) comprises a first member 22 and a conductive second member 24. The first member 22 has a rectangular shape when viewed from a direction perpendicular to the main surface 22b of the first member 22. The first member 22 has a plurality of through holes that penetrate between a pair of main surfaces of the first member 22 (a pair of main surfaces facing each other in a direction perpendicular to the plane of the paper in Figure 3: the main surface 22b is the main surface on the front side of the paper in Figure 3). The second member 24 is composed of a plurality of through portions 24a arranged in the plurality of through holes of the first member 22. The through portions 24a are arranged regularly and are positioned in positions corresponding to the gate portion G and source portion S in the semiconductor element 10 in Figure 4(a), which will be described later.

[0057] The connecting member 20d in Figure 3(b) has the same configuration as the connecting member 20c in Figure 3(a), except that the second member 24 includes a surface layer 24c (see Figure 1) in addition to the through-hole 24a. The surface layer 24c is positioned in a location corresponding to the positions of the gate portion G and source portion S in the semiconductor element 10 in Figure 4(a), which will be described later, and covers all of the through-holes 24a.

[0058] In Figure 4(a), the semiconductor element 10 has a gate portion G and three source portions S on one main surface (the main surface on the near side of the paper). In Figure 4(b), a connecting member 20c (the connecting member in Figure 3(a)) is placed on the semiconductor element 10. In Figure 4(b), the through portion 24a (second member 24) of the connecting member 20c is placed over substantially the entire gate portion G and the three source portions S. In Figure 4(c), a connecting member 20e is placed on the semiconductor element 10. The connecting member 20e has the same configuration as the connecting member 20c except that the first member 22 has a notch at a position on the gate portion G, and the first member 22 and the through portion 24a (second member 24) are not placed on the gate portion G. In Figure 4(d), a connecting member 20f is placed on the semiconductor element 10. The connecting member 20f has the same configuration as the connecting member 20c, except that the first member 22 and the through portion 24a (second member 24) are not positioned on the gate portion G, and the first member 22 and the through portion 24a (second member 24) are not positioned on a part of the source portion S. The first member 22 of the connecting member 20f has a rectangular shape when viewed from a direction perpendicular to the main surface of the first member 22.

[0059] The connecting member according to this embodiment can be manufactured by various methods. The manufacturing method of the connecting member according to the first embodiment is the manufacturing method of the connecting member according to embodiment Z1 described above. The manufacturing method of the connecting member according to the first embodiment includes a through-hole forming step in which a through-hole P12 of the second member is formed in the through-hole P11 of the first member. The through-hole P12 may be formed by plating or by sintering a sintered paste.

[0060] The method for manufacturing a connecting member according to the first embodiment may include a step of obtaining a first member by forming a through hole P11 in a member having a pair of opposing main surfaces (for example, a layered member) before the through-hole forming step.

[0061] The manufacturing method of the connecting member according to the first embodiment may include a step of forming a surface layer L constituting the second member on at least one of a pair of main surfaces of the first member after the through-hole formation step. In this case, a second member including the through-hole P12 and the surface layer L can be obtained. The surface layer L may be formed by plating, by sintering a sintered paste, by laminating metal foil (e.g., copper foil), or by vapor deposition.

[0062] The method for manufacturing a connecting member according to the second embodiment is the method for manufacturing a connecting member according to embodiment Z2 described above. The method for manufacturing a connecting member according to the second embodiment includes a cutting step in which a laminate L1 comprising a layer X1 having a pair of opposing main surfaces and a layer X2 disposed on one of the pair of main surfaces of layer X1 is cut in a direction intersecting (e.g., orthogonal) to one of the main surfaces of layer X1, thereby obtaining a structure ST of the connecting member according to embodiment Z2 described above, which has a part of layer X1 as a first part P21 and a part of layer X2 as a second part P22. The structure ST obtained in the cutting step may be a connecting member according to embodiment Z2, or it may be a structure that becomes a connecting member according to embodiment Z2 after a subsequent step (e.g., a step of forming a surface layer L).

[0063] The cut surface of the laminate L1 may be one of the pair of main surfaces of the structure ST, or the first or second surface of the connecting member. In the cutting process, the laminate L1 may be cut multiple times in a direction intersecting (e.g., perpendicular) one of the main surfaces of the layer X1 to obtain the cut surface as one of the pair of main surfaces of the structure ST, or as the cut surface as the first and second surfaces of the connecting member. If the laminate L1 before cutting has a surface intersecting (e.g., perpendicular) one of the main surfaces of the layer X1, this surface may be one of the pair of main surfaces of the structure ST, or the first or second surface of the connecting member. In this case, it is not necessary to cut the laminate L1 multiple times to obtain the pair of main surfaces of the structure ST, nor is it necessary to cut the laminate L1 multiple times to obtain the first and second surfaces of the connecting member.

[0064] The method for manufacturing a connecting member according to the second embodiment may include a lamination step to obtain a laminate L1 by stacking multiple laminates L2 each having layer X1 and layer X2, prior to the cutting step. In this case, the laminate L1 comprises multiple layers X1 and multiple layers X2.

[0065] In the lamination process, the laminate L2 may further include a layer X3 positioned on the other main surface of the pair of main surfaces of layer X1. In this case, the structure ST obtained in the cutting process may further include a part of layer X3 as a second part P22.

[0066] The method for manufacturing the connecting member according to the second embodiment may include a step after the cutting step of forming a surface layer L constituting the second member on at least one of a pair of main surfaces of the structure ST. In this case, a second member including a second portion P22 and a surface layer L can be obtained. The surface layer L may be formed by plating, by sintering a sintered paste, by laminating metal foils (e.g., copper foils), or by vapor deposition.

[0067] Figures 5-7 are schematic cross-sectional views illustrating an example of a method for manufacturing a connecting member, and are schematic cross-sectional views showing an example of a method for manufacturing a connecting member according to the second embodiment.

[0068] First, as shown in Figure 5, the laminate L1 shown in Figure 6 is obtained by stacking multiple laminates L2, each having the aforementioned layers X1, X2, and X3. Layer X1 has two opposing main surfaces Y1 and Y2, with layer X2 positioned on main surface Y1 and layer X3 positioned on main surface Y2. In the laminate L1, layer X2 of one laminate L2 is in contact with layer X3 of another laminate L2.

[0069] Next, as shown in Figure 7(a), the laminate L1 is cut in a direction perpendicular to the main surface Y1 of layer X1, thereby obtaining a connecting member 20g as a structure (the structure ST described above) having parts of layers X1, X2, and X3, as shown in Figure 7(b). Layer X1 corresponds to the first part P21 that constitutes the first member of the connecting member 20g, and layers X2 and X3 correspond to the second part P22 that constitutes the second member of the connecting member 20g. The connecting member 20g (structure ST) has a first surface 20a and a second surface 20b as opposing main surfaces, and the second members, layers X2 and X3, are continuous from the first surface 20a to the second surface 20b. [Explanation of Symbols]

[0070] 1,1a,1b...Power module, 10...Semiconductor element, 10a,10b...Main surface of semiconductor element, 20,20c,20d,20e,20f,20g...Connecting member, 20a...First surface of connecting member, 20b...Second surface of connecting member, 22...First member, 22a,22b...Main surface of first member, 22c...Through hole, 24...Second member, 24a...Through portion, 24b,24c...Surface portion, A,B,C,D1,D11,D12,D2,E...Metal member, 30...Base material, 32...Insulating member, 40...Wire, G...Gate portion, L1,L2...Laminate, S...Source portion, X1,X2,X3...Layer, Y1,Y2...Main surface of layer X1.

Claims

1. It comprises a semiconductor element and a connecting member, The connecting member comprises a first member and a conductive second member, and has a first surface and a second surface. The thermal expansion coefficient of the first member is smaller than that of the second member. The electrical resistivity of the second member is lower than that of the first member. A power module in which the second member is continuous from the first surface to the second surface and is electrically connected to the semiconductor element.

2. The power module according to claim 1, wherein the thermal conductivity of the second member is higher than that of the first member.

3. The power module according to claim 1, wherein the first member contains at least one selected from the group consisting of iron and nickel.

4. The power module according to claim 1, wherein the second member contains at least one selected from the group consisting of copper and aluminum.

5. The first member has a pair of main surfaces facing each other and a through hole penetrating between the pair of main surfaces, The power module according to any one of claims 1 to 4, wherein the through portion constituting the second member is arranged in the through hole of the first member.

6. The power module according to claim 5, wherein the through-holes are arranged in each of the plurality of through-holes.

7. The power module according to claim 5, wherein the surface layer constituting the second member is arranged on at least one of the pair of main surfaces of the first member.

8. The connecting member comprises a structure having a pair of main surfaces facing each other, The structure comprises a first part that constitutes the first member and a second part that constitutes the second member, The first portion has a pair of faces that are perpendicular to the opposing directions of the pair of main faces of the structure, The second part is positioned on each of the pair of surfaces of the first part, The power module according to any one of claims 1 to 4, wherein the first portion and the second portion are continuous from one main surface to the other of the pair of main surfaces of the structure and extend in a direction perpendicular to the opposing direction of the pair of main surfaces of the structure and the opposing direction of the pair of surfaces of the first portion.

9. The power module according to claim 8, wherein the surface layer constituting the second member is arranged on at least one of the pair of main surfaces of the structure.

10. The power module according to claim 1, further comprising a wire electrically connected to the second member on the side opposite to the semiconductor element with respect to the connecting member.

11. A connecting member used in a power module equipped with semiconductor elements, It comprises a first member and a conductive second member, and has a first surface and a second surface, The thermal expansion coefficient of the first member is smaller than that of the second member. The electrical resistivity of the second member is lower than that of the first member. A connecting member wherein the second member is continuous from the first surface to the second surface.

12. The connecting member according to claim 11, wherein the thermal conductivity of the second member is higher than that of the first member.

13. The connecting member according to claim 11, wherein the first member contains at least one selected from the group consisting of iron and nickel.

14. The connecting member according to claim 11, wherein the second member contains at least one selected from the group consisting of copper and aluminum.

15. The first member has a pair of main surfaces facing each other and a through hole penetrating between the pair of main surfaces, The connecting member according to any one of claims 11 to 14, wherein the through portion constituting the second member is arranged in the through hole of the first member.

16. The connecting member according to claim 15, wherein the through-holes are arranged in each of the plurality of through-holes.

17. The connecting member according to claim 15, wherein the surface layer constituting the second member is arranged on at least one of the pair of main surfaces of the first member.

18. It comprises a structure having a pair of main surfaces facing each other, The structure comprises a first part that constitutes the first member and a second part that constitutes the second member, The first portion has a pair of faces that are perpendicular to the opposing directions of the pair of main faces of the structure, The second part is positioned on each of the pair of surfaces of the first part, The connecting member according to any one of claims 11 to 14, wherein the first portion and the second portion are continuous from one main surface to the other of the pair of main surfaces of the structure and extend in a direction perpendicular to the opposing direction of the pair of main surfaces of the structure and the opposing direction of the pair of surfaces of the first portion.

19. The connecting member according to claim 18, wherein the surface layer constituting the second member is arranged on at least one of the pair of main surfaces of the structure.

20. A method for manufacturing a connecting member according to claim 15, A method for manufacturing a connecting member, comprising the step of forming the through-hole of the first member with the through-port of the second member.

21. The method for manufacturing a connecting member according to claim 20, further comprising the step of forming a surface layer constituting the second member on at least one of the pair of main surfaces of the first member.

22. A method for manufacturing a connecting member, comprising the step of cutting a laminate L1 comprising a layer X1 having a pair of opposing main surfaces and a layer X2 disposed on one of the pair of main surfaces of the layer X1 in a direction perpendicular to the one main surface of the layer X1, thereby obtaining a structure as the connecting member described in claim 18, having a part of the layer X1 as a first part and a part of the layer X2 as a second part.

23. The method for manufacturing a connecting member according to claim 22, further comprising the step of obtaining the laminate L1 by stacking a plurality of laminates L2 each comprising the layer X1 and the layer X2.

24. The laminate L2 further comprises a layer X3 disposed on the other main surface of the pair of main surfaces of the layer X1, The method for manufacturing a connecting member according to claim 23, wherein the structure further comprises a part of the layer X3 as the second part.

25. The method for manufacturing a connecting member according to claim 22, further comprising the step of forming the surface layer constituting the second member on at least one of the pair of main surfaces of the structure.

Images