Polycrystalline silicon manufacturing equipment

Abstract

This method efficiently manufactures polycrystalline silicon while reducing surface irregularities on the polycrystalline silicon. [Solution] The manufacturing apparatus (1) comprises a reactor (10) and a plurality of supply nozzles (40) having supply ports (41) for supplying raw material gas (G1) into the internal space (SP) of the reactor (10), wherein the first vertical distance (L1) between the supply port (41) of the supply nozzle (40) and the upper end (31) of the core wire holding part (30) is 100 mm or more and 500 mm or less.

Claims

1. A reactor whose interior is sealed by a bell jar having an inner wall made of a material whose emissivity before the deposition of polycrystalline silicon is 0.1 or less, and a bottom plate, A silicon core wire for depositing polycrystalline silicon, A core wire holding section for holding the silicon core wire inside the reactor, The reactor is provided with a supply port for supplying raw material gas to the internal space of the reactor, and a plurality of supply nozzles provided on the bottom plate, If we define the direction perpendicular to the base plate as the vertical direction, A polycrystalline silicon manufacturing apparatus characterized in that the first distance along the vertical direction between the supply port of at least one of the plurality of supply nozzles and the upper end of the core wire holding portion is 100 mm or more and 500 mm or less.

2. The apparatus for manufacturing polycrystalline silicon according to claim 1, characterized in that the second distance along the vertical direction between the upper end of the silicon core wire and the upper end of the core wire holding portion is 2000 mm or more and 2400 mm or less.

3. The surface of the inner wall of the bell jar is made of silver. The apparatus for producing polycrystalline silicon according to claim 1, characterized in that the surface roughness Ra of the inner wall is 0.400 μm or less.

4. The apparatus for manufacturing polycrystalline silicon according to claim 1, characterized in that the first distance is 1 / 4 or less of the second distance along the vertical direction between the upper end of the silicon core wire and the upper end of the core wire holding portion.

5. The plurality of supply nozzles are arranged along a plurality of concentric circles centered on the center of the bottom plate when viewed from the vertical direction, If, among the aforementioned plurality of concentric circles, any adjacent concentric circles are designated as the first concentric circle and the second concentric circle, The polycrystalline silicon manufacturing apparatus according to claim 1, characterized in that the position of the supply port of the supply nozzle provided along the first concentric circle and the position of the supply port of the supply nozzle provided along the second concentric circle are offset from each other in the vertical direction.

6. When viewed from the vertical direction, if the center of the base plate is considered the inside and the periphery of the base plate is considered the outside, and the second concentric circle is outside the first concentric circle, The apparatus for producing polycrystalline silicon according to claim 5, characterized in that the supply port of the supply nozzle provided along the second concentric circle is located at a higher position than the supply port of the supply nozzle provided along the first concentric circle.

7. The polycrystalline silicon manufacturing apparatus according to claim 1, characterized in that the supply ports of all the supply nozzles provided on the bottom plate are positioned at or above the upper end of the core wire holding portion.

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