Power semiconductor device testing equipment
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- QUALTEC CO LTD
- Filing Date
- 2026-04-13
- Publication Date
- 2026-06-25
AI Technical Summary
【0017】 トランジスタをオンさせて、トランジスタのチャンネル間に定電流Icを印加して、トランジスタのチャンネル間電圧を測定するため、トランジスタが発熱せず、精度よくトランジスタの温度情報Tjを得ることができる。
Smart Images

Figure 2026104940000001_ABST
Abstract
Claims
1. A power semiconductor device test apparatus for testing a semiconductor device or semiconductor module having a first terminal, a second terminal, and a gate terminal, A power supply circuit that supplies a test current between the first terminal and the second terminal of the semiconductor element or semiconductor module, A constant current circuit is provided to supply a constant current between the first terminal and the second terminal of the semiconductor element or semiconductor module. A driver circuit that applies an off voltage, a first on voltage, and a second on voltage to the gate terminal, It comprises a voltage output circuit that outputs the terminal voltage between the first terminal and the second terminal, By applying the aforementioned off voltage, the semiconductor element or semiconductor module is turned off. The semiconductor element or semiconductor module is turned on by the application of the first or second on voltage. The on-resistance of the semiconductor element or semiconductor module due to the application of the second on-voltage is smaller than the on-resistance of the semiconductor element or semiconductor module due to the application of the first on-voltage. When the first ON voltage is applied, the test current is supplied to the semiconductor element or semiconductor module. A power semiconductor device test apparatus characterized by supplying the constant current to the semiconductor device or semiconductor module when the second ON voltage is applied, measuring the terminal voltage, and stopping or interrupting the test or changing the test conditions based on the terminal voltage.
2. A power semiconductor device test apparatus for testing a semiconductor device or semiconductor module having a first terminal, a second terminal, and a gate terminal, A power supply circuit that supplies a test current between the first terminal and the second terminal of the semiconductor element or semiconductor module, A driver circuit that applies an off voltage, a first on voltage, and a second on voltage to the gate terminal, It comprises a voltage output circuit that outputs the terminal voltage between the first terminal and the second terminal, By applying the aforementioned off voltage, the semiconductor element or semiconductor module is turned off. The semiconductor element or semiconductor module is turned on by the application of the first or second on voltage. The on-resistance of the semiconductor element or semiconductor module due to the application of the second on-voltage is smaller than the on-resistance of the semiconductor element or semiconductor module due to the application of the first on-voltage. When the first ON voltage and the second ON voltage are applied, the test current is supplied to the semiconductor element or semiconductor module. A power semiconductor device test apparatus characterized by measuring the terminal voltage when the second ON voltage is applied, and stopping or interrupting the test or changing the test conditions based on the terminal voltage.
3. A power semiconductor device test apparatus for testing a semiconductor device or semiconductor module having a first terminal, a second terminal, and a gate terminal, A power supply circuit that supplies a test current between the first terminal and the second terminal of the semiconductor element or semiconductor module, A constant current circuit is provided to supply a constant current between the first terminal and the second terminal of the semiconductor element or semiconductor module. A driver circuit that sequentially applies an off voltage, a second on voltage, a first on voltage, and a second on voltage to the gate terminal, It comprises a voltage output circuit that outputs the terminal voltage between the first terminal and the second terminal, By applying the aforementioned off voltage, the semiconductor element or semiconductor module is turned off. The semiconductor element or semiconductor module is turned on by the application of the first or second on voltage. The on-resistance of the semiconductor element or semiconductor module due to the application of the second on-voltage is smaller than the on-resistance of the semiconductor element or semiconductor module due to the application of the first on-voltage. When the first ON voltage is applied, the test current is supplied to the semiconductor element or semiconductor module. A power semiconductor device test apparatus characterized by supplying the constant current to the semiconductor device or semiconductor module when the second ON voltage is applied, measuring the terminal voltage, and stopping or interrupting the test or changing the test conditions based on the terminal voltage.
4. A power semiconductor device test apparatus for testing a semiconductor device or semiconductor module having a first terminal, a second terminal, and a gate terminal, A power supply circuit that supplies a test current between the first terminal and the second terminal of the semiconductor element or semiconductor module, A constant current circuit is provided to supply a constant current between the first terminal and the second terminal of the semiconductor element or semiconductor module. A driver circuit that applies an off voltage, a first on voltage, and a second on voltage to the gate terminal, It comprises a voltage output circuit that outputs the terminal voltage between the first terminal and the second terminal, By applying the aforementioned off voltage, the semiconductor element or semiconductor module is turned off. The semiconductor element or semiconductor module is turned on by the application of the first or second on voltage. The on-resistance of the semiconductor element or semiconductor module due to the application of the second on-voltage is smaller than the on-resistance of the semiconductor element or semiconductor module due to the application of the first on-voltage. When the first ON voltage is applied, the test current is supplied to the semiconductor element or semiconductor module. When the second ON voltage is applied, the constant current is supplied to the semiconductor element or semiconductor module. Multiple semiconductor elements or semiconductor modules are connected to the power supply circuit. The power semiconductor device test apparatus is characterized in that the test current is supplied to one semiconductor device or semiconductor module selected at the same time, the terminal voltage is measured, and the test is stopped or interrupted or the test conditions are changed based on the terminal voltage.
5. The switch circuit board further comprises a connecting member, a switch circuit, and a conductor plate. The conductor plate has a portion that protrudes from the switch circuit board, The power semiconductor device testing apparatus according to claim 1, 2, 3, or 4, characterized in that the connecting member is connected to the protruding portion.
6. It further includes a switch circuit, The switch circuit is connected to the output terminal of the power supply circuit. The operation of the aforementioned switch circuit short-circuits the output terminal of the power supply circuit, After the power supply circuit supplies the test current to the semiconductor element or semiconductor module, After operating the aforementioned switch circuit, The power semiconductor device testing apparatus according to claim 1, claim 3, or claim 4, characterized in that it supplies the constant current to the semiconductor device or semiconductor module.
7. The power semiconductor device testing apparatus according to claim 1, 2, 3, or 4, further comprising a temperature sensor disposed on at least one of the first terminal and the second terminal.
8. A resistor circuit is connected between the output of the driver circuit and the gate terminal. The power semiconductor device testing apparatus according to claim 1, 2, 3, or 4, characterized in that the resistance value of the resistor circuit when the first ON voltage is applied and the resistance value of the resistor circuit when the second ON voltage is applied can be changed.
9. The voltage value of the first ON voltage described above is variable. The power semiconductor device testing apparatus according to claim 1, 2, 3, or 4, characterized in that the second on-voltage is a higher voltage than the first on-voltage.
Citation Information
Patent Citations
Semiconductor device and failure detection method
JP2017017822A