DC-DC converter

The DC-DC converter with a back gate electrode and control circuit optimizes power conversion efficiency by adjusting threshold voltage based on output power, using oxide semiconductors to reduce power loss and enhance battery life in semiconductor devices.

JP2026113637APending Publication Date: 2026-07-07SEMICON ENERGY LAB CO LTD
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Patent Information

Application Number
JP2026062060
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2010-06-10
Filing Date
2026-04-03
Publication Date
2026-07-07

AI Technical Summary

Technical Problem

Existing DC-DC converters in semiconductor devices suffer from inefficiencies in power conversion, leading to high power consumption and reduced continuous usage time in portable electronic devices, particularly when using batteries or capacitors.

Method used

A DC-DC converter design that includes a transistor with a back gate electrode and a back gate control circuit to adjust the threshold voltage based on output power, using oxide semiconductors with low off-current and high voltage withstand capability, reducing power loss through optimized on-resistance and off-current management.

Benefits of technology

Improves power conversion efficiency by minimizing power loss, thereby reducing power consumption and extending the continuous usage time of semiconductor devices.

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Abstract

One of the objectives is to provide DC-DC converters that improve power conversion efficiency. [Solution] A transistor that functions as a switching element for controlling output power In addition to the normal gate electrode, it is equipped with a back gate electrode for controlling the threshold voltage. Then, according to the magnitude of the output power output from the DC-DC converter, the back gate electrode It is equipped with a back gate control circuit for controlling the height of the potential applied. By controlling the potential applied to the back gate electrode using your circuit, when the output power is large... The threshold voltage is adjusted so that the on-resistance decreases, and the off-current decreases when the output power is small. The threshold voltage can be adjusted accordingly. Furthermore, it functions as a switching element. The transistor is an insulated-gate field-effect transistor with extremely low off-current.
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Citation Information

Patent Citations

  • Semiconductor device and method for manufacturing the same

    JP2007096055A

  • Semiconductor device and its manufacturing method

    JP2007123861A