Light-emitting diode display device

Abstract

To provide a light-emitting diode device that can prevent external light reflection and other issues without reducing brightness. [Solution] A light-emitting diode display device 100 includes a display panel 101 including a first pixel region P1, a second pixel region P2, and a third pixel region P3; a transmittance variable layer 175 including a first spacer 180a, a second spacer 180b, and a third spacer 180c located in the first light-emitting region P1, the second light-emitting region P2, and the third light-emitting region P3, respectively, and a light-absorbing layer 178 located in the space between each spacer; a drive electrode layer 171 provided on one side of the transmittance variable layer 175 including a first drive electrode 172 and a second drive electrode 173; and a touch electrode layer 181 located on the other side of the transmittance variable layer 175 including a first touch electrode 182 corresponding to the first drive electrode 172 and a second touch electrode 183 corresponding to the second drive electrode 173.

Description

[Technical Field]

[0001] The present invention relates to a light-emitting diode display device, and more particularly to a light-emitting diode display device that can prevent problems of ambient light reflection and unevenness caused by ambient light reflection without reducing brightness. [Background technology]

[0002] With the increasing size of display devices, there is a growing demand for flat display devices that occupy less space. As one such flat display element, organic light-emitting diode (OLED) display devices and inorganic light-emitting diode (ILED) display devices have been developed and are being adopted in a variety of fields.

[0003] For example, in an organic light-emitting diode (OLED) display device, holes from the anode and electrons from the cathode combine in the organic light-emitting layer to form excitons, resulting in an unstable excited state. Light is emitted when the OLED returns from this state to a stable ground state.

[0004] Unlike liquid crystal displays, light-emitting diode (LED) displays do not require a polarizing filter. However, LED displays without a polarizing filter suffer from a problem of reduced display quality due to reflection of ambient light. To minimize this reflection, LED displays are equipped with a polarizing filter on the display surface side.

[0005] Light-emitting diode (LED) display devices equipped with polarizing plates minimize external light reflection, but the polarizing plates cause a problem of reduced brightness. [Overview of the Initiative] [Problems that the invention aims to solve]

[0006] The present invention aims to solve the problems of ambient light reflection and brightness reduction in light-emitting diode (LED) display devices. [Means for solving the problem]

[0007] To solve the aforementioned problems, the present invention provides a light-emitting diode display device comprising: a display panel including a first pixel region, a second pixel region, and a third pixel region, and light-emitting diodes provided in each of the first light-emitting region of the first pixel region, the second light-emitting region of the second pixel region, and the third light-emitting region of the third pixel region; a variable transmittance layer located at the top of the display panel and including a first spacer, a second spacer, and a third spacer located in the first light-emitting region, the second light-emitting region, and the third light-emitting region, respectively, and a light-absorbing layer located in the space between the first, second, and third spacers or on each of the sides of the first, second, and third spacers; a drive electrode layer located on one side of the variable transmittance layer and including a first drive electrode provided in a first non-light-emitting region between the first light-emitting region and the second light-emitting region, and a second drive electrode provided in a second non-light-emitting region between the second light-emitting region and the third light-emitting region; and a touch electrode layer located on the other side of the variable transmittance layer and including a first touch electrode corresponding to the first drive electrode and a second touch electrode corresponding to the second drive electrode.

[0008] In the light-emitting diode display device of the present invention, the first drive electrode and the second drive electrode are located between the display panel and the transmittance variable layer, the first touch electrode has a width greater than that of the first drive electrode, and the second touch electrode has a width greater than that of the second drive electrode.

[0009] The light-emitting diode display device of the present invention further includes a first partition located in the first non-light-emitting region and a second partition located in the second non-light-emitting region, wherein the first drive electrode is provided on both sides of one end of the first partition, and the second drive electrode is provided on both sides of one end of the second partition.

[0010] In the light-emitting diode display device of the present invention, the light-absorbing layer is characterized in that it includes a first light-absorbing layer located between the first spacer and the first partition wall, and between the second spacer and the first partition wall, and a second light-absorbing layer located between the second spacer and the second partition wall, and between the third spacer and the second partition wall.

[0011] The present invention relates to a light-emitting diode display device, further comprising a first black matrix and a second black matrix located on the transmittance variable layer and positioned in the first non-emitting region and the second non-emitting region, respectively, and a first color filter layer, a second color filter layer, and a third color filter layer located above the transmittance variable layer and corresponding to the first light-emitting region, the second light-emitting region, and the third light-emitting region, respectively, wherein the width of the first partition is smaller than the width of the first black matrix, and the width of the second partition is smaller than the width of the second black matrix.

[0012] In the light-emitting diode display device of the present invention, each of the first spacer, the second spacer, and the third spacer is characterized by being dome-shaped.

[0013] In the light-emitting diode display device of the present invention, the first touch electrode and the second touch electrode are located between the display panel and the transmittance variable layer, the first drive electrode has a width greater than that of the first touch electrode, and the second drive electrode has a width greater than that of the second touch electrode.

[0014] In the light-emitting diode display device of the present invention, in the first driving mode, the light-absorbing layer is located within the first non-emitting region and the second non-emitting region, and the transmittance variable layer has a first transmittance in each of the first emitting region, the second emitting region, and the third emitting region; in the second driving mode, the light-absorbing layer covers each of the sides of the first spacer, the second spacer, and the third spacer, and the transmittance variable layer has a second transmittance lower than the first transmittance in each of the first emitting region, the second emitting region, and the third emitting region.

[0015] In the light-emitting diode display device of the present invention, in the first driving mode, the light-absorbing layer is located within the first non-emitting region and the second non-emitting region, and the transmittance variable layer has a third transmittance in each of the first non-emitting region and the second non-emitting region. In the second driving mode, the light-absorbing layer covers each of the sides of the first spacer, the second spacer, and the third spacer, and the transmittance variable layer has a fourth transmittance higher than the third transmittance in each of the first non-emitting region and the second non-emitting region.

[0016] The present invention relates to a light-emitting diode display device, characterized in that in the first drive mode, the light-emitting diode is in an ON state, and in the second drive mode, the light-emitting diode is in an OFF state.

[0017] The present invention relates to a light-emitting diode display device, further comprising a bridge electrode located below or above the touch electrode layer and connected to the first touch electrode or the second touch electrode.

[0018] The light-emitting diode display device of the present invention further includes, on the variable transmittance layer, a first black matrix and a second black matrix respectively located in the first non-light-emitting region and the second non-light-emitting region, and a first color filter layer, a second color filter layer, and a third color filter layer located on the variable transmittance layer and respectively corresponding to the first light-emitting region, the second light-emitting region, and the third light-emitting region.

[0019] In the light-emitting diode display device of the present invention, the display panel further includes a first bank located in the first non-light-emitting region and a second bank located in the second non-light-emitting region.

[0020] In the light-emitting diode display device of the present invention, the width of the first bank is greater than the width of the first black matrix, and the width of the second bank is greater than the width of the second black matrix.

[0021] In the light-emitting diode display device of the present invention, the distance between the first spacer and the second spacer is not more than the width of the first black matrix.

[0022] In the light-emitting diode display device of the present invention, the width of the first driving electrode is not more than the width of the first black matrix, and the width of the second driving electrode is not more than the width of the second black matrix.

[0023] In the light-emitting diode display device of the present invention, the width of the first touch electrode is not more than the width of the first black matrix, and the width of the second touch electrode is not more than the width of the second black matrix.

[0024] In the light-emitting diode display device of the present invention, the thickness of each of the first spacer, the second spacer, and the third spacer is not more than the distance between the driving electrode layer and the touch electrode layer.

[0025] In the light-emitting diode display device of the present invention, the light absorption layer is characterized by containing charged black particles.

[0026] The light-emitting diode display device of the present invention includes a transmissivity variable touch panel positioned above the display panel. The transmissivity variable touch panel includes a transmissivity variable layer containing first to third spacers positioned in first to third light-emitting regions and a light absorption layer positioned in the space between the first to third spacers, a first driving electrode and a second driving electrode provided in a first non-light-emitting region between the first pixel region and the second pixel region and a second non-light-emitting region between the second pixel region and the third pixel region and positioned on one side of the transmissivity variable layer, and a touch electrode layer containing a first touch electrode corresponding to the first driving electrode and a second touch electrode corresponding to the second driving electrode and positioned on the other side of the transmissivity variable layer.

[0027] In such a light-emitting diode display device, due to the voltage difference between the first driving electrode and the second driving electrode and the first touch electrode and the second touch electrode, the transmissivity variable layer is driven, and according to the on / off of the light-emitting diode, the transmissivity in the first to third light-emitting regions is adjusted. Therefore, it is possible to reduce the reflection of external light without reducing the brightness. That is, the light-emitting diode display device of the present invention can realize a high-brightness video with low external light reflection and has the effect of low-power driving (ESG).

[0028] Also, the light-emitting diode display device of the present invention further includes first and second partition walls positioned in the first non-light-emitting region and the second non-light-emitting region, so that the light absorption layer of the transmissivity variable layer can be uniformly included in each of the first to third pixel regions. As a result, the characteristics of external light reflection in the first to third pixel regions can be made uniform.

[0029] Furthermore, in the light-emitting diode display device of the present invention, since the first to third spacers are dome-shaped, the light from the display panel is condensed, and the effect of improving the light efficiency is achieved.

Brief Description of the Drawings

[0030] [Figure 1] This is a schematic circuit diagram showing the light-emitting diode display device according to the present invention. [Figure 2A] This is a schematic plan view illustrating a light-emitting diode display device according to a first embodiment of the present invention. [Figure 2B] This is a schematic plan view illustrating a light-emitting diode display device according to a first embodiment of the present invention. [Figure 3A] This is a schematic cross-sectional view showing a light-emitting diode display device according to a first embodiment of the present invention. [Figure 3B] This is a schematic cross-sectional view showing a light-emitting diode display device according to a first embodiment of the present invention. [Figure 4] This is a schematic cross-sectional view showing the display panel of a light-emitting diode display device according to a first embodiment of the present invention. [Figure 5] This is a schematic cross-sectional view showing a light-emitting diode display device according to a second embodiment of the present invention. [Figure 6] This is a schematic cross-sectional view showing a light-emitting diode display device according to a third embodiment of the present invention. [Figure 7] This is a schematic cross-sectional view showing a light-emitting diode display device according to a fourth embodiment of the present invention. [Modes for carrying out the invention]

[0031] The terminology used in the embodiments of this invention has been selected, as far as possible, to be common terms widely used today, but may differ depending on the intent of the articulators, case law, the emergence of new technologies, etc. Where the applicant has arbitrarily selected specific terms, their meanings will be detailed. Therefore, terms used herein should be defined based on their meaning and the overall content of this disclosure.

[0032] Throughout the specification, if a part is described as "including" or "comprising" a certain component, unless otherwise specified, this does not exclude other components, but rather may include other components.

[0033] Throughout the specification, the expression "at least one of a, b, and c" may encompass "a alone," "b alone," "c alone," "a and b," "a and c," "b and c," or "all of a, b, and c." The advantages and features of the present invention, and how they are achieved, will become clearer with reference to the embodiments detailed with the drawings.

[0034] The shapes, areas, ratios, angles, and quantities disclosed in the drawings illustrating embodiments of the present invention are illustrative and the present invention is not limited thereto. When describing embodiments, if it is determined that a specific explanation of related prior art would obscure the gist of the embodiments, such detailed explanation will be omitted.

[0035] Wherever "equipped," "included," "possessed," "have," or "become" is used in this specification, other parts may be added. Furthermore, wherever a component is described in the singular form, it may be interpreted as plural unless otherwise explicitly stated. In interpreting components, a margin of error is included even without explicit mention.

[0036] For example, when describing the positional relationship between two components using terms such as "above," "above," "below," or "beside," one or more other components may be located between those two components. When an element or layer is described as "on" another element or layer, this includes all cases where another layer or other element is directly above or between it and the other element.

[0037] Furthermore, while terms such as "first" and "second" are used to distinguish the components, the components are not limited to these terms. Therefore, the first component mentioned below may also be the second component within the technical concept of the present invention.

[0038] The area, length, and thickness of each component described in the specification are illustrated for illustrative purposes only and do not necessarily limit the present invention to them.

[0039] The features of each of the multiple embodiments of the present invention can be combined or integrated partially or entirely, enabling a wide range of technically diverse interconnections and drives. Furthermore, each embodiment can be implemented independently of or in conjunction with one another.

[0040] Furthermore, the terms described later are defined in consideration of their function in implementing the present invention, and may differ depending on the intent or conventions of the user or operator. Therefore, these terms should be defined based on the overall content of this specification.

[0041] Unless otherwise specified, the transistors constituting the pixel circuit of the present invention may include at least one of the following: oxide thin film transistors (Oxide TFTs), amorphous silicon TFTs (a-Si TFTs), and low-temperature polysilicon TFTs (Low Temperature Polysilicon TFTs (LTPS TFTs).

[0042] The following embodiments will primarily describe organic light-emitting diode (LED) display devices. However, embodiments of the present invention are not limited to organic light-emitting diode (LED) display devices and may also be used in inorganic light-emitting diode (LED) display devices containing inorganic light-emitting materials. For example, embodiments of the present invention can also be used in quantum dot display devices. That is, the display device of the present invention may be an organic light-emitting diode display device containing an organic light-emitting diode, or a quantum dot light-emitting diode display device containing a quantum dot light-emitting diode.

[0043] Expressions such as "First," "Second," and "Third" are terms used to distinguish the configuration of each embodiment, and the embodiments are not limited to these terms. Therefore, the same term may refer to different configurations depending on the embodiment.

[0044] The present invention's light-emitting diode display device will now be described with reference to the drawings.

[0045] Figure 1 is a schematic circuit diagram showing a light-emitting diode display device according to the present invention.

[0046] As shown in Figure 1, the light-emitting diode (LED) display device has gate wiring GL, data wiring DL, and power wiring PL that intersect with each other and define the pixel region P. A switching thin-film transistor Ts, a driving thin-film transistor Td, a storage capacitor Cst, and a light-emitting diode D are formed in the pixel region P. The pixel region P may include red pixel regions, green pixel regions, and blue pixel regions.

[0047] The switching thin-film transistor Ts is connected to the gate wiring GL and data wiring DL, while the driving thin-film transistor Td and storage capacitor Cst are connected between the switching thin-film transistor Ts and the power wiring PL. The light-emitting diode D is connected to the driving thin-film transistor Td.

[0048] In such a light-emitting diode display device, when the switching thin-film transistor Ts turns on in response to a gate signal applied to the gate wiring GL, the data signal applied to the data wiring DL is applied via the switching thin-film transistor Ts to the gate electrode of the driving thin-film transistor Td and one electrode of the storage capacitor Cst.

[0049] The driving thin-film transistor Td turns on in response to the data signal applied to its gate electrode. As a result, a current proportional to the data signal flows from the power supply wiring PL through the driving thin-film transistor Td to the light-emitting diode D, and the light-emitting diode D emits light with a brightness proportional to the current flowing through the driving thin-film transistor Td.

[0050] At this time, the storage capacitor Cst is charged with a voltage proportional to the data signal, so that the voltage of the gate electrode of the drive thin-film transistor Td is kept constant for one frame.

[0051] Therefore, the light-emitting diode display device can display the desired image.

[0052] Figures 2A and 2B are schematic plan views illustrating a light-emitting diode display device according to a first embodiment of the present invention. Figure 2A is a schematic plan view showing the touch electrode layer of a variable transmittance touch panel, and Figure 2B is a schematic plan view showing the drive electrode layer of a variable transmittance touch panel.

[0053] The present invention provides a light-emitting diode display device comprising a display panel including light-emitting diodes and a transmissibility-variable touch panel located above the display panel, wherein the transmissibility-variable touch panel includes a transmissibility-variable layer, a touch electrode layer located on one side of the transmissibility-variable layer, and a drive electrode layer located on the other side of the transmissibility-variable layer.

[0054] As shown in Figure 2A, the touch electrode layer 181 includes a first touch electrode row comprising a plurality of first touch electrodes 182 arranged in a first direction X, and a second touch electrode row comprising a plurality of second touch electrodes 183 arranged in the first direction X and spaced apart from the first touch electrode row in a second direction Y. The touch electrode layer 181 may be provided on a transmittance variable layer (175 in Figure 3A).

[0055] Multiple first touch electrodes 182 of the first touch electrode array are connected to each other, and multiple second touch electrodes 183 of the second touch electrode array are connected to each other.

[0056] Each of the multiple first touch electrode rows is connected to the first touch electrode pad TP1 via multiple connecting wires at its end in the first direction X. Each second touch electrode 183 of the second touch electrode row is connected via a bridge electrode and is connected to the second touch electrode pad TP2 via multiple connecting wires at its end in the second direction Y.

[0057] As shown in Figure 2B, the drive electrode layer 171 includes a first drive electrode row comprising a plurality of first drive electrodes 172 arranged in a first direction X, and a second drive electrode row comprising a plurality of second drive electrodes 173 arranged in the first direction X and spaced apart from the first drive electrode row in a second direction Y. The drive electrode layer 171 can be provided on a first buffer layer (164 in Figure 3A).

[0058] Multiple first drive electrodes 172 of the first drive electrode array are connected to each other, and multiple second drive electrodes 173 of the second drive electrode array are connected to each other.

[0059] Multiple first drive electrode rows are connected to a first drive electrode pad DP1 via connecting wiring at one end of the first direction X, and multiple second drive electrode rows are connected to a second drive electrode pad DP2 via connecting wiring at the other end of the first direction X.

[0060] The first touch electrode 182 is superimposed on the first drive electrode 172, and the second touch electrode 183 is superimposed on the second drive electrode 173. For example, the first touch electrode 182 may be located above the first drive electrode 172 and have a width (area) greater than or equal to that of the first drive electrode 172, and the second touch electrode 183 may be located above the second drive electrode 173 and have a width (area) greater than or equal to that of the second drive electrode 173.

[0061] Figures 3A and 3B are schematic cross-sectional views of a light-emitting diode display device according to a first embodiment of the present invention, and are cross-sectional views along the cutting line II' of Figure 2A or Figure 2B. Figure 3A shows the ON state of the light-emitting diode, and Figure 3B shows the OFF state of the light-emitting diode.

[0062] As shown in Figures 3A and 3B, the light-emitting diode display device 100 according to the first embodiment of the present invention includes a display panel 101 and a transmittance variable touch panel 170 located above the display panel 101.

[0063] Furthermore, the light-emitting diode display device 100 may further include a color filter panel 190 located above the variable transmittance touch panel 170. That is, the variable transmittance touch panel 170 is located between the display panel 101 and the color filter panel 190.

[0064] Furthermore, the light-emitting diode display device 100 may further include at least one of a first buffer layer 164 located between the display panel 101 and the variable transmittance touch panel 170, and a second buffer layer 166 located between the variable transmittance touch panel 170 and the color filter panel 190. Each of the first buffer layer 164 and the second buffer layer 166 is made of silicon oxide (SiO2) or silicon nitride (SiN x The structure may be a single layer made of an inorganic insulating material such as ) or an organic insulating material such as photoacrylic or benzocyclobutene, or it may be a multilayer structure.

[0065] The display panel 101 may be an organic light-emitting diode display panel or an inorganic light-emitting diode display panel.

[0066] Referring to Figure 4, a schematic cross-sectional view showing a display panel of a light-emitting diode display device according to a first embodiment of the present invention, the display panel 101 includes a substrate 102 including a pixel region P, and a light-emitting diode D corresponding to the pixel region P and located on the upper part of the substrate 102.

[0067] Pixel region P may include a first pixel region P1 to a third pixel region P3. The first pixel region P1 may be a red pixel region, the second pixel region P2 may be a green pixel region, and the third pixel region P3 may be a blue pixel region.

[0068] Each of the first pixel region P1 to the third pixel region P3 includes an emitting region and a non-emitting region. For example, the substrate 102 can define a first emitting region EA1 of the first pixel region P1, a second emitting region EA2 of the second pixel region P2, a third emitting region EA3 of the third pixel region P3, a first non-emitting region NEA1 between the first emitting region EA1 and the second emitting region EA2, and a second non-emitting region NEA2 between the second emitting region EA2 and the third emitting region EA3.

[0069] The substrate 102 may be a glass substrate or a plastic substrate. For example, the substrate 102 may be any one of the following: a polyimide (PI) substrate, a polyethersulfone (PES) substrate, a polyethylene naphthalate (PEN) substrate, a polyethylene terephthalate (PET) substrate, or a polycarbonate (PC) substrate.

[0070] In one embodiment of the present invention, the substrate 102 may have a three-layer structure including a first polyimide film, a second polyimide film, and an interlayer inorganic film between the first and second polyimide films. The interlayer inorganic film may be silicon oxide (SiO2) or silicon nitride (SiN x It can be formed from inorganic insulating materials such as ).

[0071] A first light-shielding pattern 104 is provided on the substrate 102. The first light-shielding pattern 104 serves to block incident light from outside the substrate 102. For example, the first light-shielding pattern 104 can be formed from a metallic material such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof, and may be a single-layer structure or a multi-layer structure.

[0072] Although not shown in the diagram, silicon oxide (SiO2) and silicon nitride (SiN) are placed between the substrate 102 and the first light-shielding pattern 104. x A buffer layer made of an inorganic insulating material such as ) can be provided.

[0073] A third buffer layer 106 is provided on the upper part of the substrate 102, covering the first light-shielding pattern 104. The third buffer layer 106 serves to block moisture and oxygen from below. For example, the third buffer layer 106 is made of silicon oxide (SiO2) or silicon nitride (SiN x It consists of an inorganic insulating material such as ), and may have a single-layer structure or a multilayer structure. If the first light-shielding pattern 104 is omitted, the third buffer layer 106 can be formed in contact with the entire surface of the substrate 102.

[0074] A first semiconductor layer 110 corresponding to the first light-shielding pattern 104 is placed on the third buffer layer 106. The first semiconductor layer 110 may include any one of the following: a polycrystalline semiconductor material, an amorphous semiconductor material, or an oxide semiconductor material. If the first light-shielding pattern 104 and the third buffer layer 106 are omitted, the first semiconductor layer 110 can be formed directly on the substrate 102.

[0075] In embodiments of the present invention, the first semiconductor layer 110 can be formed from a polycrystalline semiconductor material such as polycrystalline silicon. The first semiconductor layer 110 includes a first channel region 110a and first source regions 110b and first drain regions 110c on both sides of the first channel region 110a. The first source region 110b and the first drain region 110c are each doped with impurities.

[0076] A first gate insulating film 112 is provided above the third buffer layer 106, covering the first semiconductor layer 110. The first gate insulating film 112 is made of silicon oxide (SiO2) or silicon nitride (SiN x It can be formed from inorganic insulating materials such as ) and may have a single-layer structure or a multi-layer structure.

[0077] A first gate electrode 114 corresponding to the first channel region 110a of the first semiconductor layer 110 is provided on the first gate insulating film 112. A first capacitor electrode 116 is also provided on the first gate insulating film 112, spaced apart from the first gate electrode 114.

[0078] The first gate electrode 114 and the first capacitor electrode 116 can be located in the same layer and formed from the same material. For example, each of the first gate electrode 114 and the first capacitor electrode 116 can be formed from a metallic material such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof, and may have a single-layer structure or a multilayer structure.

[0079] A first interlayer insulating film 118 is provided above the first gate insulating film 112, covering the first gate electrode 114 and the first capacitor electrode 116. The first interlayer insulating film 118 is made of silicon oxide (SiO2) or silicon nitride (SiN x It can be formed from inorganic insulating materials such as ) and may have a single-layer structure or a multi-layer structure.

[0080] A second capacitor electrode 130 corresponding to the first capacitor electrode 116 and a second light-shielding pattern 132 spaced apart from the second capacitor electrode 130 are provided on the first interlayer insulating film 118.

[0081] The second capacitor electrode 130 and the second light-shielding pattern 132 can be located in the same layer and formed from the same material. For example, each of the second capacitor electrode 130 and the second light-shielding pattern 132 can be formed from a metallic material such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof, and may have a single-layer or multi-layer structure.

[0082] A second interlayer insulating film 134 is provided above the first interlayer insulating film 118, covering the second capacitor electrode 130 and the second light-shielding pattern 132. The second interlayer insulating film 134 serves to block moisture and oxygen from the outside. For example, the second interlayer insulating film 134 is made of silicon oxide (SiO2) or silicon nitride (SiN x It consists of an inorganic insulating material such as ) or an organic insulating material such as photoacrylic or benzocyclobutene, and may have a single-layer structure or a multi-layer structure.

[0083] A second semiconductor layer 136 corresponding to a second light-shielding pattern 132 is provided on the second interlayer insulating film 134. The second semiconductor layer 136 may include one of the following: a polycrystalline semiconductor material, an amorphous semiconductor material, or an oxide semiconductor material.

[0084] In embodiments of the present invention, the second semiconductor layer 136 can be formed from an oxide semiconductor material such as indium gallium zinc oxide (IGZO), zinc oxide (ZnO), tin oxide (SnO2), copper oxide (Cu2O), nickel oxide (NiO), indium tin zinc oxide (ITZO), or indium aluminum zinc oxide (IAZO). The second semiconductor layer 136 includes a second channel region 136a and second source regions 136b and second drain regions 136c on either side of the second channel region 136a. The second source region 136b and the second drain region 136c are doped with impurities.

[0085] A second gate insulating film 138 is provided above the second interlayer insulating film 134, covering the second semiconductor layer 136. The second gate insulating film 138 is made of silicon oxide (SiO2) or silicon nitride (SiN x It can be formed from inorganic insulating materials such as ) and may have a single-layer structure or a multi-layer structure.

[0086] On the second gate insulating film 138, a second gate electrode 140 corresponding to the second channel region 136a of the second semiconductor layer 136 is provided. For example, the second gate electrode 140 is made of a metallic material such as any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof, and may have a single-layer structure or a multilayer structure.

[0087] On the upper part of the second gate insulating film 138, a third interlayer insulating film 142 covering the second gate electrode 140 is provided. The third interlayer insulating film 142 is made of an inorganic insulating material such as silicon oxide (SiO2) or silicon nitride (SiN x ) and may have a single-layer structure or a multilayer structure.

[0088] On the third interlayer insulating film 142, a first source electrode 144a, a first drain electrode 144b, a second source electrode 146a, and a second drain electrode 146b are provided, which are arranged apart from each other.

[0089] The first source electrode 144a and the first drain electrode 144b are respectively connected to the first source region 110b and the first drain region 110c of the first semiconductor layer 110 through contact holes formed in the third interlayer insulating film 142, the second gate insulating film 138, the second interlayer insulating film 134, the first interlayer insulating film 118, and the first gate insulating film 112. Also, the first source electrode 144a is connected to the first capacitor electrode 116 through contact holes formed in the third interlayer insulating film 142, the second gate insulating film 138, the second interlayer insulating film 134, and the first interlayer insulating film 118.

[0090] The second source electrode 146a and the second drain electrode 146b are connected to the second source region 136b and the second drain region 136c of the second semiconductor layer 136, respectively, via contact holes formed in the third interlayer insulating film 142 and the second gate insulating film 138. The second source electrode 146a is also connected to the second capacitor electrode 130 via contact holes formed in the third interlayer insulating film 142, the second gate insulating film 138, and the second interlayer insulating film 134.

[0091] The first source electrode 144a, the first drain electrode 144b, the second source electrode 146a, and the second drain electrode 146b can be located in the same layer and formed from the same material. For example, each of the first source electrode 144a, the first drain electrode 144b, the second source electrode 146a, and the second drain electrode 146b can be formed from a metallic material such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof, and may have a single-layer structure or a multi-layer structure.

[0092] The first semiconductor layer 110, the first gate electrode 114, the first source electrode 144a, and the first drain electrode 144b constitute the first thin-film transistor T1, and the second semiconductor layer 136, the second gate electrode 140, the second source electrode 146a, and the second drain electrode 146b constitute the second thin-film transistor T2. For example, the first thin-film transistor T1 may be a switching thin-film transistor, and the second thin-film transistor T2 may be a driving thin-film transistor. In addition, the first capacitor electrode 116 and the second capacitor electrode 130 constitute a storage capacitor.

[0093] The display panel 101 includes a first thin-film transistor T1 and a second thin-film transistor T2, and each of the first semiconductor layer 110 of the first thin-film transistor T1 and the second semiconductor layer 136 of the second thin-film transistor T2 may contain one of a polycrystalline semiconductor material, an amorphous semiconductor material, or an oxide semiconductor material, and at least one of the first semiconductor layer 110 of the first thin-film transistor T1 and the second semiconductor layer 136 of the second thin-film transistor T2 may contain an oxide semiconductor material. In one embodiment of the present invention, the first semiconductor layer 110 of the first thin-film transistor T1 may be formed from a polycrystalline semiconductor material, for example, polycrystalline silicon, and the second semiconductor layer 136 of the second thin-film transistor T2 may be formed from an oxide semiconductor material.

[0094] In Figure 4, the first gate electrode 114, the first source electrode 144a, and the first drain electrode 144b are located on the upper part of the first semiconductor layer 110, and the second gate electrode 140, the second source electrode 146a, and the second drain electrode 146b are located on the upper part of the second semiconductor layer 136. That is, each of the first thin-film transistor T1 and the second thin-film transistor T2 has a coplanar structure. Alternatively, in each of the first thin-film transistor T1 and the second thin-film transistor T2, the gate electrode can be located at the bottom of the semiconductor layer, and the source electrode and drain electrode can be located at the top of the semiconductor layer. That is, each of the first thin-film transistor T1 and the second thin-film transistor T2 can have an inverse staggered structure.

[0095] A planarization layer 150 is provided above the third interlayer insulating film 142, covering the first source electrode 144a, the first drain electrode 144b, the second source electrode 146a, and the second drain electrode 146b. The planarization layer 150 can be formed from an organic insulating material such as photoacrylic or benzocyclobutene (BCB).

[0096] The planarization layer 150 may include a first planarization layer 150a located on the first source electrode 144a, the first drain electrode 144b, the second source electrode 146a, and the second drain electrode 146b, and a second planarization layer 150b located on the first planarization layer 150a.

[0097] A connecting electrode 148 corresponding to the second source electrode 146a is provided on the first planarization layer 150a. The connecting electrode 148 can be connected to the second source electrode 146a through a contact hole formed in the first planarization layer 150a. For example, the connecting electrode 148 can be formed from a metallic material such as one of the following: molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof, and may have a single-layer structure or a multi-layer structure.

[0098] A second flattening layer 150b is provided on the first flattening layer 150a, covering the connecting electrode 148, and the first electrode 160a is provided on the second flattening layer 150b. The first electrode 160a corresponds to the connecting electrode 148 and is connected to the connecting electrode 148 through a contact hole formed in the second flattening layer 150b.

[0099] For example, the first electrode 160a is formed separately for each pixel region P. The first electrode 160a is the anode and may include a transparent conductive oxide layer and a reflective layer made of a conductive material with a relatively large work function, such as transparent conductive oxide (TCO).

[0100] The transparent conductive oxide layer can be formed from indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), tin oxide (SnO), zinc oxide (ZnO), indium copper oxide (ICO), and aluminum:zinc oxide (Al:ZnO, AZO). The reflective layer can be formed from silver (Ag), or an alloy of silver (Ag) with at least one of palladium (Pd), copper (Cu), indium (In), or neodymium (Nd), or an aluminum-palladium-copper (APC) alloy. For example, the first electrode 160a may have a two-layer structure of Ag / ITO or APC / ITO, or a three-layer structure of ITO / Ag / ITO or ITO / APC / ITO.

[0101] Furthermore, a bank 156 located at the boundary of the pixel region P is provided on the second planarization layer 150b. The bank 156 may have an opening that covers the edge of the first electrode 160a while exposing the center of the first electrode 160a. The bank 156 may extend into a portion of the non-display region NDA, and may contain light-absorbing particles (e.g., black particles) and be light-absorbing.

[0102] Although not shown in the diagram, a spacer can be provided on bank 156.

[0103] Bank 156 and the spacer can be formed from the same material. For example, each of bank 156 and the spacer can be formed from an organic insulating material such as photoacrylic, benzocyclobutene, or polyimide.

[0104] A light-emitting layer 160b is provided while covering the first electrode 160a and the bank 156. The light-emitting layer 160b contacts the first electrode 160a at the opening of the bank 156. That is, the light-emitting layer 160b can be formed in contact with the upper surface of the first electrode 160a and the side and upper surfaces of the bank 156.

[0105] For example, the light-emitting layer 160b may comprise an organic light-emitting material layer containing a host and a dopant, or an inorganic light-emitting material layer containing an inorganic light-emitting material such as a quantum dot. Furthermore, the light-emitting layer 160b may have a multilayer structure further comprising at least one of the following: a hole injection layer, a hole transport layer, an electron barrier layer, another hole barrier layer, an electron transport layer, or an electron injection layer.

[0106] A second electrode 160c is provided on the light-emitting layer 160b. The second electrode 160c can be formed from one of the following: indium tin oxide (ITO), indium zinc oxide (IZO), aluminum (Al), silver (Ag), copper (Cu), lead (Pb), magnesium (Mg), molybdenum (Mo), titanium (Ti), or alloys thereof, and may have a single-layer structure or a multilayer structure. The second electrode 160c may be a thin transparent electrode or a semi-transparent electrode.

[0107] The first electrode 160a, the light-emitting layer 160b, and the second electrode 160c constitute a light-emitting diode D. The light-emitting diode D can emit red light, green light, and blue light from the red pixel region, the green pixel region, and the blue pixel region, respectively.

[0108] In the display panel 101, light from the organic light-emitting layer 160b passes through the second electrode 160c, and an image is displayed. In other words, the display panel 101 can be a top-emission type display panel.

[0109] A capsule sealing layer 162 that suppresses moisture penetration is placed over the entire surface of the substrate 102 above the second electrode 160c. The capsule sealing layer 162 may have a multilayer structure including a first inorganic layer 162a, an organic layer 162b, and a second inorganic layer 162c that are arranged sequentially.

[0110] For example, the first inorganic layer 162a and the second inorganic layer 162c are each made of silicon oxide (SiO2) or silicon nitride (SiN xThe organic layer 162b can be formed from an inorganic insulating material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin.

[0111] Referring again to Figures 3A and 3B, a first buffer layer 164 is provided on the display panel 101, and a transmissivity-variable touch panel 170 is placed on the first buffer layer 164.

[0112] The variable transmittance touch panel 170 includes a variable transmittance layer 175 containing a spacer 180 and a light-absorbing layer 178, a drive electrode layer 171, and a touch electrode layer 181.

[0113] The spacer 180 includes a first spacer 180a located in the first light-emitting region EA1, a second spacer 180b located in the second light-emitting region EA2, and a third spacer 180c located in the third light-emitting region EA3. Each of the first spacer 180a through the third spacer 180c is spaced apart from each other. The space between the first spacer 180a and the second spacer 180b corresponds to the first non-light-emitting region NEA1, and the space between the second spacer 180b and the third spacer 180c corresponds to the second non-light-emitting region NEA2.

[0114] Each of the first to third spacers 180a to 180c has a first width at its lower part and a second width smaller than the first width at its upper part. For example, each of the first to third spacers 180a to 180c may be triangular pyramidal in shape.

[0115] Each of the first spacer 180a to the third spacer 180c can be formed from an organic insulating material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin.

[0116] The light-absorbing layer 178 is located in the space between the first spacers 180a to the third spacers 180c, or on each of the sides of the first spacers 180a to the third spacers 180c. That is, the light-absorbing layer 178 is located in the first non-emitting region NEA1 and the second non-emitting region NEA2, or covers each of the sides of the first spacers 180a to the third spacers 180c.

[0117] The light-absorbing layer 178 contains charged black particles. The light-absorbing layer 178 is located in the light-emitting regions EA1, EA2, EA3, or the non-light-emitting regions NEA1, NEA2 by driving the variable transmittance touch panel 170, and the transmittance of the variable transmittance touch panel 170 and the light-emitting diode display device 100 is adjusted.

[0118] The light-absorbing layer 178 may include a first light-absorbing layer 178a located in a first non-emitting region NEA1, or on one side of the first spacer 180a and one side of the second spacer 180b, and a second light-absorbing layer 178b located in a second non-emitting region NEA2, or on one side of the second spacer 180b and one side of the third spacer 180c.

[0119] The drive electrode layer 171 is located on one side of the transmittance variable layer 175. For example, the drive electrode layer 171 can be located on the lower side of the transmittance variable layer 175.

[0120] The driving electrode layer 171 is located on the first buffer layer 164 and is situated in non-emitting regions NEA1 and NEA2. The driving electrode layer 171 may include a first driving electrode 172 located in the first non-emitting region NEA1 and a second driving electrode 173 located in the second non-emitting region NEA2. The driving electrode layer 171 is located below the light absorption layer 178 and is superimposed on the light absorption layer 178.

[0121] The drive electrode layer 171 is located between the spacers 180. The first drive electrode 172 is located between the first spacer 180a and the second spacer 180b, and the second drive electrode 173 is located between the second spacer 180b and the third spacer 180c.

[0122] The drive electrode layer 171 can be located on the same layer as the spacer 180. That is, both the drive electrode layer 171 and the spacer 180 can be located on the first buffer layer 164.

[0123] Each of the first drive electrode 172 and the second drive electrode 173 can be formed from a conductive material. For example, each of the first drive electrode 172 and the second drive electrode 173 can be formed from at least one of the following: molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), tin oxide (SnO), zinc oxide (ZnO), indium copper oxide (ICO), and aluminum:zinc oxide (Al:ZnO, AZO).

[0124] The touch electrode layer 181 is located on the other side of the variable transmittance layer 175. For example, the touch electrode layer 181 can be located on the upper side of the variable transmittance layer 175.

[0125] The touch electrode layer 181 is located in non-emitting regions NEA1 and NEA2. The touch electrode layer 181 may include a first touch electrode 182 located in the first non-emitting region NEA1, and a second touch electrode 183 located in the second non-emitting region NEA2.

[0126] The first touch electrode 182 corresponds to the first drive electrode 172, and the second touch electrode 183 corresponds to the second drive electrode 173. The first touch electrode 182 is superimposed on the first drive electrode 172, and the second touch electrode 183 is superimposed on the second drive electrode 173.

[0127] The width of the first touch electrode 182 may be greater than or equal to the width of the first drive electrode 172, and the width of the second touch electrode 183 may be greater than or equal to the width of the second drive electrode 173. In one embodiment of the present invention, the width of the first touch electrode 182 may be greater than the width of the first drive electrode 172, and the width of the second touch electrode 183 may be greater than the width of the second drive electrode 173.

[0128] The center of the first touch electrode 182 is located in the first non-emitting region NEA1, and both ends of the first touch electrode 182 can extend into a portion of the first emitting region EA1 and a portion of the second emitting region EA2, respectively. The center of the second touch electrode 183 is located in the second non-emitting region NEA2, and both ends of the second touch electrode 183 can extend into a portion of the second emitting region EA2 and a portion of the third emitting region EA3, respectively.

[0129] The first touch electrode 182 and the second touch electrode 183 can each be formed from a conductive material. For example, each of the first touch electrode 182 and the second touch electrode 183 can be formed from at least one of the following: molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), tin oxide (SnO), zinc oxide (ZnO), indium copper oxide (ICO), and aluminum:zinc oxide (Al:ZnO, AZO). In one embodiment of the present invention, each of the first touch electrode 182 and the second touch electrode 183 can be formed from a transparent conductive material.

[0130] The variable transmittance touch panel 170 may further include a touch buffer layer 186 covering a first touch electrode 182 and a second touch electrode 183, and a bridge electrode 188 located on the touch buffer layer 186 and connected to the second touch electrode 183. The bridge electrode 188 can contact the second touch electrode 183 through contact holes formed in the touch buffer layer 186.

[0131] The touch buffer layer 186 is made of silicon oxide (SiO2) or silicon nitride (SiN x It can be formed from inorganic insulating materials such as ).

[0132] The bridge electrode 188 can be formed from a conductive material. For example, the bridge electrode 188 can be formed from at least one of the following: molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), tin oxide (SnO), zinc oxide (ZnO), indium copper oxide (ICO), and aluminum:zinc oxide (Al:ZnO, AZO). In one embodiment of the present invention, the bridge electrode 188 can be formed from a transparent conductive material.

[0133] Referring to Figures 3A and 4, in the first driving mode when the light-emitting diode D is ON, no voltage difference is generated between the driving electrode layer 171 and the touch electrode layer 181, and the light-absorbing layer 178 can be located in the space between the first spacer 180a to the third spacer 180c, i.e., the first non-emitting region NEA1 and the second non-emitting region NEA2.

[0134] In other words, the first light absorption layer 178a can be located on the first drive electrode 172 between the first drive electrode 172 and the first touch electrode 182 in the first non-emitting region NEA1, and the second light absorption layer 178b can be located on the second drive electrode 173 between the second drive electrode 173 and the second touch electrode 183 in the second non-emitting region NEA2.

[0135] As a result, in the first driving mode, the variable transmittance touch panel 170 or the light-emitting diode display device 100 has relatively high transmittance in each of the first light-emitting region EA1 to the third light-emitting region EA3, and relatively low transmittance in each of the first non-light-emitting region NEA1 and the second non-light-emitting region NEA2. Consequently, the display from the light-emitting diode D of the display panel 101 is displayed in the first light-emitting region EA1 to the third light-emitting region EA3 without any decrease in brightness.

[0136] Referring to Figures 3B and 4, in the second driving mode when the light-emitting diode D is in the off state, a voltage difference is generated between the driving electrode layer 171 and the touch electrode layer 181, and the light-absorbing layer 178 covers the sides of the first spacer 180a to the third spacer 180c. That is, in the second driving mode, the light-absorbing layer 178 can be located in the first light-emitting region EA1 to the third light-emitting region EA3.

[0137] In other words, the first light-absorbing layer 178a covers one side of the first spacer 180a and one side of the second spacer 180b, and the second light-absorbing layer 178b covers one side of the second spacer 180b and one side of the third spacer 180c.

[0138] Furthermore, in the second driving mode, at least a portion of the first light absorption layer 178a can be positioned while covering the first driving electrode 172, and at least a portion of the second light absorption layer 178b can be positioned while covering the second driving electrode 173.

[0139] As a result, in the second drive mode, the variable transmittance touch panel 170 or the light-emitting diode display device 100 has relatively low transmittance in each of the first light-emitting region EA1 to the third light-emitting region EA3, and relatively high transmittance in each of the first non-light-emitting region NEA1 and the second non-light-emitting region NEA2. Consequently, the reflection of ambient light from the light-emitting diode display device 100 can be minimized.

[0140] In other words, in the first driving mode, the light absorption layer 178 is located within the first non-emitting region NEA1 and the second non-emitting region NEA2, and the transmittance variable layer 175 has a first transmittance in each of the first emitting region EA1 to the third emitting region EA3. In the second driving mode, the light absorption layer 178 covers the sides of the first spacer 180a to the third spacer 180c, and the transmittance variable layer 175 can have a second transmittance lower than the first transmittance in each of the first emitting region EA1 to the third emitting region EA3.

[0141] Furthermore, in the first driving mode, the light absorption layer 178 is located within the first non-emitting region NEA1 and the second non-emitting region NEA2, and the transmittance variable layer 175 has a third transmittance in each of the first non-emitting region NEA1 and the second non-emitting region NEA2. In the second driving mode, the light absorption layer 178 covers the sides of the first spacer 180a to the third spacer 180c, and the transmittance variable layer 175 can have a fourth transmittance higher than the third transmittance in each of the first non-emitting region NEA1 and the second non-emitting region NEA2.

[0142] In one embodiment of the present invention, in the second driving mode, the light absorption layer 178 can cover the sides of the first spacers 180a to the third spacers 180c and fill the space between the first spacers 180a to the third spacers 180c. In this case, in each of the first non-emitting region NEA1 and the second non-emitting region NEA2, the transmittance of the transmittance variable layer 175 in the second driving mode may be substantially the same as the transmittance of the transmittance variable layer 175 in the first driving mode.

[0143] The thickness of the spacer 180 may be less than or equal to the distance between the drive electrode layer 171 and the touch electrode layer 181. In one embodiment of the present invention, the thickness of the spacer 180 may be less than the distance between the drive electrode layer 171 and the touch electrode layer 181. When the thickness of the spacer 180 is less than the distance between the drive electrode layer 171 and the touch electrode layer 181, the light absorption layer 178 can cover the upper end of the spacer 180 in the second drive mode, thereby minimizing the transmittance of the variable transmittance touch panel 170 in the second drive mode.

[0144] The second buffer layer 166 is provided on the bridge electrode 188, and the color filter panel 190 is provided on the second buffer layer 166.

[0145] The color filter panel 190 may include a black matrix 191 corresponding to non-emitting regions NEA1 and NEA2, and a color filter layer 194 corresponding to emitting regions EA1, EA2, and EA3.

[0146] The black matrix 191 may include a first black matrix 192 corresponding to a first non-emitting region NEA1, and a second black matrix 193 corresponding to a second non-emitting region NEA2. Each of the first black matrix 192 and the second black matrix 193 corresponds to the boundary of the pixel region P.

[0147] The width of the black matrix 191 may be smaller than the width of the bank 156. That is, the bank 156 corresponds to the light-emitting regions EA1 and EA2 and has a first aperture, and the black matrix 191 corresponds to the light-emitting regions EA1 and EA2 and has a second aperture, and the area (width) of the first aperture may be smaller than the area of ​​the second aperture.

[0148] Furthermore, the distance between the spacers 180 may be less than or equal to the width of the black matrix 191. That is, the widths of the first drive electrode 172 and the second drive electrode 173 may be less than or equal to the width of the black matrix 191. In one embodiment of the present invention, the distance between the spacers 180 may be less than the width of the black matrix 191.

[0149] Furthermore, the widths of the first touch electrode 182 and the second touch electrode 183 may be greater than or equal to the width of the black matrix 191. In one embodiment of the present invention, the width of the black matrix 191 may be less than the widths of the first touch electrode 182 and the second touch electrode 183, and greater than the widths of the first drive electrode 172 and the second drive electrode.

[0150] The color filter layer 194 is located between the black matrices 191. The color filter layer 194 may include a first color filter pattern 195 corresponding to the first emission region EA1, a second color filter pattern 196 corresponding to the second emission region EA2, and a third color filter pattern 197 corresponding to the third emission region EA3.

[0151] The first color filter pattern 195 is a red color filter pattern and may contain a red dye or red pigment. The second color filter pattern 196 is a green color filter pattern and may contain a green dye or green pigment. The third color filter pattern 197 is a blue color filter pattern and may contain a blue dye or blue pigment.

[0152] The color filter panel 190 may further include a protective layer 198 covering the black matrix 191 and the color filter layer 194. The protective layer 198 may be made of silicon oxide (SiO2) or silicon nitride (SiN x They may be formed from inorganic insulating materials such as ) or from organic insulating materials such as photoacrylic or benzocyclobutene.

[0153] The first embodiment of the present invention includes a light-emitting diode display device 100 located above the display panel 101, which includes a variable transmittance touch panel 170 whose transmittance can be adjusted, thereby minimizing the reflection of ambient light without reducing brightness.

[0154] In other words, the light-absorbing layer 178 of the variable transmittance touch panel 170 covers the sides of the spacer 180, which is located in the non-emitting regions NEA1 and NEA2 in the first drive mode and in the emitting regions EA1 and EA2 in the second drive mode. As a result, the brightness of the emitting regions EA1 and EA2 does not decrease in the first drive mode, and the reflection of ambient light in the emitting regions EA1 and EA2 can be reduced in the second drive mode.

[0155] Furthermore, by utilizing the touch electrode layer 181 to drive the light absorption layer 178, the addition of separate configurations to reduce reflection of ambient light can be minimized.

[0156] Furthermore, if the thickness of the spacer 180 is less than the distance between the drive electrode layer 171 and the touch electrode layer 181, the light absorption layer 178 can cover the upper end of the spacer 180, thereby further reducing the reflection of ambient light.

[0157] Figure 5 is a schematic cross-sectional view showing a light-emitting diode display device according to a second embodiment of the present invention.

[0158] As shown in Figure 5, the light-emitting diode display device 200 according to the second embodiment of the present invention includes a display panel 101 and a transmissivity-variable touch panel 270 located above the display panel 101.

[0159] The display panel 101 may be an organic light-emitting diode display panel or an inorganic light-emitting diode display panel.

[0160] Furthermore, the light-emitting diode display device 200 may further include a color filter panel 190 located above the variable transmittance touch panel 270. That is, the variable transmittance touch panel 270 is located between the display panel 101 and the color filter panel 190.

[0161] Furthermore, the light-emitting diode display device 200 may further include at least one of a first buffer layer 164 located between the display panel 101 and the variable transmittance panel 270, and a second buffer layer 166 located between the variable transmittance panel 270 and the color filter panel 190.

[0162] The light-emitting diode display device 200 according to the second embodiment of the present invention differs from the light-emitting diode display device 100 according to the first embodiment of the present invention in its variable transmittance panel 270. Therefore, the explanation will focus on the variable transmittance panel 270.

[0163] The variable transmittance panel 270 includes a variable transmittance layer 275 containing a spacer 280 and a light absorption layer 278, a drive electrode layer 271, a touch electrode layer 281, and a partition wall 290.

[0164] The spacer 280 includes a first spacer 280a located in the first light-emitting region EA1, a second spacer 280b located in the second light-emitting region EA2, and a third spacer 280c located in the third light-emitting region EA3.

[0165] The partition wall 290 is provided in the non-luminescent regions NEA1 and NEA2. That is, the partition wall 290 is located between adjacent spacers 280.

[0166] The partition wall 290 includes a first partition wall 292 located in the first non-emitting region NEA1, and a second partition wall 294 located in the second non-emitting region NEA2. The first partition wall 292 is located between the first spacer 280a and the second spacer 280b, and is spaced apart from the first spacer 280a and the second spacer 280b. The second partition wall 294 is located between the second spacer 280b and the third spacer 280c, and is spaced apart from the second spacer 280b and the third spacer 280c.

[0167] The partition wall 290 can be formed from the same material as the spacer 280. Furthermore, the partition wall 290 can be formed using the same process as the spacer 280. For example, both the partition wall 290 and the spacer 280 can be formed from organic insulating materials such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin.

[0168] The light-absorbing layer 278 is located in the space between the spacer 280 and the partition wall 290, or on each of the sides of the first spacer 280a to the third spacer 280c. That is, the light-absorbing layer 278 is located in the first non-emitting region NEA1 and the second non-emitting region NEA2, or covers each of the sides of the first spacer 280a to the third spacer 280c.

[0169] The light-absorbing layer 278 contains charged black particles. The light-absorbing layer 278 is located in the light-emitting regions EA1, EA2, EA3, or the non-light-emitting regions NEA1, NEA2 by driving the variable transmittance touch panel 270, and the transmittance of the variable transmittance touch panel 270 and the light-emitting diode display device 200 is adjusted.

[0170] The light-absorbing layer 278 may include a first light-absorbing layer 278a located in a first non-emitting region NEA1 between the first spacer 280a and the first partition wall 292 and in a first non-emitting region NEA1 between the second spacer 280b and the first partition wall 292, or located on one side of the first spacer 280a and one side of the second spacer 280b; and a second light-absorbing layer 278b located in a second non-emitting region NEA2 between the second spacer 280b and the second partition wall 294 and in a second non-emitting region NEA2 between the third spacer 280c and the second partition wall 294, or located on one side of the second spacer 280b and one side of the third spacer 280c.

[0171] The first light-absorbing layer 278a is located on both sides of the first partition wall 292, and the second light-absorbing layer 278b is located on both sides of the second partition wall 294. That is, the first light-absorbing layer 278a can be divided by the first partition wall 292, and the second light-absorbing layer 278b can be divided by the second partition wall 294.

[0172] The drive electrode layer 271 is located on one side of the transmittance variable layer 275. For example, the drive electrode layer 271 can be located on the lower side of the transmittance variable layer 275.

[0173] The driving electrode layer 271 is located on the first buffer layer 164 and is situated in non-emitting regions NEA1 and NEA2. The driving electrode layer 271 may include a first driving electrode 272 located in the first non-emitting region NEA1 and a second driving electrode 273 located in the second non-emitting region NEA2. The driving electrode layer 271 is located below the light absorption layer 278 and is superimposed on the light absorption layer 278.

[0174] The drive electrode layer 271 may include a first drive electrode 272 located in the first non-emitting region NEA1 between the first spacer 280a and the first partition wall 292, and in the first non-emitting region NEA1 between the second spacer 280b and the first partition wall 292, and a second drive electrode 274 located in the second non-emitting region NEA2 between the second spacer 280b and the second partition wall 294, and in the second non-emitting region NEA2 between the third spacer 280c and the second partition wall 294.

[0175] The first drive electrode 272 is located on both sides of the first partition wall 292, and the second drive electrode 274 is located on both sides of the second partition wall 294. In other words, the first drive electrode 272 can be separated by the first partition wall 292, and the second drive electrode 274 can be separated by the second partition wall 294.

[0176] In other words, each of the light-absorbing layer 278 and the driving electrode 272 may have a first aperture corresponding to the spacer 280 in each of the light-emitting regions EA1, EA2, and EA3, and a second aperture corresponding to the non-light-emitting regions NEA1, NEA2, and NEA3.

[0177] The touch electrode layer 281 is located on the other side of the variable transmittance layer 275. For example, the touch electrode layer 281 can be located on the upper side of the variable transmittance layer 275.

[0178] The touch electrode layer 281 can be located on the partition wall 290. That is, the touch electrode layer 281 is located in the non-luminescent regions NEA1 and NEA2, and the space between the touch electrode layers 281 corresponds to the spacer 280.

[0179] The touch electrode layer 281 may include a first touch electrode 282 located in a first non-emitting region NEA1, and a second touch electrode 283 located in a second non-emitting region NEA2.

[0180] The first touch electrode 282 corresponds to the first aperture formed in the first drive electrode 272 and the first light absorption layer 278a, and can have substantially the same area as the first aperture. The second touch electrode 283 corresponds to the second aperture formed in the second drive electrode 272 and the second light absorption layer 278b, and can have substantially the same area as the first aperture.

[0181] In one embodiment of the present invention, the first touch electrode 282 has a larger area than the first partition wall 292 and therefore superimposes on the first drive electrode 272, and the second touch electrode 283 has a larger area than the second partition wall 294 and therefore can superimpose on the second drive electrode 273.

[0182] The transmissivity-variable touch panel 270 may further include a touch buffer layer 286 covering a first touch electrode 282 and a second touch electrode 283, and a bridge electrode 288 located on the touch buffer layer 286 and connected to the second touch electrode 283. The bridge electrode 288 can be connected to the second touch electrode 283 through a contact hole formed in the touch buffer layer 286.

[0183] In the first driving mode, when the light-emitting diode (D in Figure 4) is ON, no voltage difference is generated between the driving electrode layer 271 and the touch electrode layer 281, and the light-absorbing layer 278 can be located in the space between the spacer 280 and the partition wall 290, i.e., the first non-emitting region NEA1 and the second non-emitting region NEA2.

[0184] In other words, the first light absorption layer 278a can be located on the first drive electrode 272 between the first drive electrode 272 and the first touch electrode 282 in the first non-emitting region NEA1, and the second light absorption layer 278b can be located on the second drive electrode 273 between the second drive electrode 273 and the second touch electrode 283 in the second non-emitting region NEA2.

[0185] As a result, in the first driving mode, the transmittance variable touch panel 270 or the light-emitting diode display device 200 has relatively high transmittance in each of the first light-emitting region EA1 to the third light-emitting region EA3, and relatively low transmittance in each of the first non-light-emitting region NEA1 and the second non-light-emitting region NEA2.

[0186] In the second driving mode, when the light-emitting diode D is in the off state, a voltage difference is generated between the driving electrode layer 271 and the touch electrode layer 281, and the light-absorbing layer 278 covers the sides of the first spacer 280a to the third spacer 280c. That is, in the second driving mode, the light-absorbing layer 278 can be located in the first light-emitting region EA1 to the third light-emitting region EA3.

[0187] In other words, the first light-absorbing layer 278a covers one side of the first spacer 280a and one side of the second spacer 280b, and the second light-absorbing layer 278b covers one side of the second spacer 280b and one side of the third spacer 280c.

[0188] Furthermore, in the second driving mode, at least a portion of the first light absorption layer 278a can be positioned while covering the first driving electrode 272, and at least a portion of the second light absorption layer 278b can be positioned while covering the second driving electrode 273.

[0189] As a result, in the second drive mode, the transmittance variable touch panel 270 or the light-emitting diode display device 200 has relatively low transmittance in each of the first light-emitting region EA1 to the third light-emitting region EA3, and relatively high transmittance in each of the first non-light-emitting region NEA1 and the second non-light-emitting region NEA2.

[0190] In other words, in the first driving mode, the light absorption layer 278 is located within the first non-emitting region NEA1 and the second non-emitting region NEA2, and the transmittance variable layer 275 has a first transmittance in each of the first emitting region EA1 to the third emitting region EA3. In the second driving mode, the light absorption layer 278 covers the sides of the first spacer 280a to the third spacer 280c, and the transmittance variable layer 275 can have a second transmittance lower than the first transmittance in each of the first emitting region EA1 to the third emitting region EA3.

[0191] Furthermore, in the first driving mode, the light absorption layer 278 is located within the first non-emitting region NEA1 and the second non-emitting region NEA2, and the transmittance variable layer 275 has a third transmittance in each of the first non-emitting region NEA1 and the second non-emitting region NEA2. In the second driving mode, the light absorption layer 278 covers the sides of the first spacer 280a to the third spacer 280c, and the transmittance variable layer 275 can have a fourth transmittance higher than the third transmittance in each of the first non-emitting region NEA1 and the second non-emitting region NEA2.

[0192] In one embodiment of the present invention, in the second driving mode, the light-absorbing layer 278 can cover the sides of the first spacers 280a to the third spacers 280c and fill the space between the first spacers 280a to the third spacers 280c. In this case, in each of the first non-emitting region NEA1 and the second non-emitting region NEA2, the transmittance of the transmittance variable layer 275 in the second driving mode may be substantially the same as the transmittance of the transmittance variable layer 275 in the first driving mode.

[0193] The thickness of the spacer 280 may be less than or equal to the distance between the drive electrode layer 271 and the touch electrode layer 281, i.e., the thickness of the partition wall 290. In one embodiment of the present invention, the thickness of the spacer 280 may be less than the distance between the drive electrode layer 271 and the touch electrode layer 281. When the thickness of the spacer 280 is less than the distance between the drive electrode layer 271 and the touch electrode layer 281, the light absorption layer 278 can cover the upper end of the spacer 280 in the second drive mode, thereby minimizing the transmittance of the variable transmittance touch panel 270 in the second drive mode.

[0194] The width of the black matrix 191 may be smaller than the width of the bank 156. That is, the distance between the spacers 280 and the width of the partition wall 290 may each be smaller than or equal to the width of the black matrix 191. In one embodiment of the present invention, the distance between the spacers 280 and the width of the partition wall 290 may each be smaller than the width of the black matrix 191.

[0195] A second embodiment of the present invention includes a light-emitting diode display device 200 located above the display panel 101, which includes a variable transmittance touch panel 270 whose transmittance can be adjusted, thereby minimizing the reflection of ambient light without reducing brightness.

[0196] In other words, the light-absorbing layer 278 of the variable transmittance touch panel 270 covers the sides of the spacer 280, which is located in the non-emitting regions NEA1 and NEA2 in the first drive mode and in the emitting regions EA1 and EA2 in the second drive mode. As a result, the brightness of the emitting regions EA1 and EA2 does not decrease in the first drive mode, and the reflection of ambient light in the emitting regions EA1 and EA2 can be reduced in the second drive mode.

[0197] Furthermore, by utilizing the touch electrode layer 281 to drive the light absorption layer 278, the addition of separate configurations to reduce reflection of ambient light can be minimized.

[0198] Furthermore, since the light-absorbing layer 278 is separated for each pixel region P by the partition wall 290, the volume of the light-absorbing layer 278 in each pixel region P can be maintained. As a result, unevenness in the characteristics of ambient light reflection in the pixel region P can be prevented.

[0199] Furthermore, if the thickness of the spacer 280 is less than the distance between the drive electrode layer 271 and the touch electrode layer 281, the light absorption layer 278 can cover the upper end of the spacer 280, thereby further reducing the reflection of ambient light.

[0200] Figure 6 is a schematic cross-sectional view showing a light-emitting diode display device according to a third embodiment of the present invention.

[0201] As shown in Figure 6, the light-emitting diode display device 300 according to the third embodiment of the present invention includes a display panel 101 and a transmissivity-variable touch panel 370 located above the display panel 101.

[0202] The display panel 101 may be an organic light-emitting diode display panel or an inorganic light-emitting diode display panel.

[0203] Furthermore, the light-emitting diode display device 300 may further include a color filter panel 190 located above the variable transmittance touch panel 370. That is, the variable transmittance touch panel 370 is located between the display panel 101 and the color filter panel 190.

[0204] Furthermore, the light-emitting diode display device 300 may further include at least one of a first buffer layer 164 located between the display panel 101 and the variable transmittance panel 370, and a second buffer layer 166 located between the variable transmittance panel 370 and the color filter panel 190.

[0205] Compared to the light-emitting diode display device 100 according to the first embodiment of the present invention, the light-emitting diode display device 300 according to the third embodiment of the present invention shows a difference in the spacer 380 of the variable transmittance panel 370. Therefore, the explanation will focus on the spacer 380 of the variable transmittance panel 370.

[0206] The variable transmittance panel 370 includes a variable transmittance layer 175 containing a spacer 380 and a light absorption layer 178, a drive electrode layer 171, and a touch electrode layer 181.

[0207] The spacer 380 includes a first spacer 380a located in the first light-emitting region EA1, a second spacer 380b located in the second light-emitting region EA2, and a third spacer 380c located in the third light-emitting region EA3. Each of the first spacer 380a through the third spacer 380c is spaced apart from the others. The space between the first spacer 380a and the second spacer 380b corresponds to the first non-light-emitting region NEA1, and the space between the second spacer 380b and the third spacer 380c corresponds to the second non-light-emitting region NEA2.

[0208] Each of the first to third spacers 380a to 380c has a first width at its lower end and a second width smaller than the first width at its upper end. For example, each of the first to third spacers 380a to 380c may be dome-shaped (or lens-shaped). Therefore, the light from the display panel 101 is concentrated, resulting in an improved light efficiency in the first to third light-emitting regions EA1 to EA3.

[0209] A third embodiment of the present invention includes a light-emitting diode display device 300 located above the display panel 101, which includes a variable transmittance touch panel 370 whose transmittance can be adjusted, thereby minimizing the reflection of ambient light without reducing brightness.

[0210] In other words, the light-absorbing layer 178 of the variable transmittance touch panel 370 covers the sides of the spacer 380, which is located in the non-emitting regions NEA1 and NEA2 in the first drive mode and in the emitting regions EA1 and EA2 in the second drive mode. As a result, the brightness of the emitting regions EA1 and EA2 does not decrease in the first drive mode, and the reflection of ambient light in the emitting regions EA1 and EA2 can be reduced in the second drive mode.

[0211] Furthermore, by utilizing the touch electrode layer 181 to drive the light absorption layer 178, the addition of separate configurations to reduce reflection of ambient light can be minimized.

[0212] Furthermore, because the spacer 380 is dome-shaped, it concentrates the light from the display panel 101, resulting in an improved light efficiency in the first light-emitting region EA1 to the third light-emitting region EA3.

[0213] Furthermore, if the thickness of the spacer 280 is less than the distance between the drive electrode layer 271 and the touch electrode layer 281, the light absorption layer 278 can cover the upper end of the spacer 280, thereby further reducing the reflection of ambient light.

[0214] Figure 7 is a schematic cross-sectional view showing a light-emitting diode display device according to a fourth embodiment of the present invention.

[0215] As shown in Figure 7, the light-emitting diode display device 400 according to the fourth embodiment of the present invention includes a display panel 101 and a transmissivity-variable touch panel 470 located above the display panel 101.

[0216] The display panel 101 may be an organic light-emitting diode display panel or an inorganic light-emitting diode display panel.

[0217] Furthermore, the light-emitting diode display device 400 may further include a color filter panel 190 located above the variable transmittance touch panel 470. That is, the variable transmittance touch panel 470 is located between the display panel 101 and the color filter panel 190.

[0218] Furthermore, the light-emitting diode display device 400 may further include at least one of a first buffer layer 164 located between the display panel 101 and the variable transmittance panel 470, and a second buffer layer 166 located between the variable transmittance panel 470 and the color filter panel 190.

[0219] Compared to the light-emitting diode display device 100 according to the first embodiment of the present invention, the light-emitting diode display device 400 according to the fourth embodiment of the present invention shows differences in the drive electrode layer 471 and the touch electrode layer 481 of the variable transmittance panel 470. Therefore, the explanation will focus on the drive electrode layer 471 and the touch electrode layer 481 of the variable transmittance panel 470.

[0220] The touch electrode layer 481 is located on the other side of the variable transmittance layer 175. For example, the touch electrode layer 481 can be located on the lower side of the variable transmittance layer 175.

[0221] The touch electrode layer 481 is located on the first buffer layer 164 and is situated in non-emitting regions NEA1 and NEA2. The touch electrode layer 481 may include a first touch electrode 482 located in the first non-emitting region NEA1 and a second touch electrode 483 located in the second non-emitting region NEA2.

[0222] The drive electrode layer 471 is located on one side of the transmittance variable layer 175. For example, the drive electrode layer 471 can be located on the upper side of the transmittance variable layer 175.

[0223] The drive electrode layer 471 is located in non-luminescent regions NEA1 and NEA2. The drive electrode layer 471 may include a first drive electrode 472 located in the first non-luminescent region NEA1, and a second drive electrode 473 located in the second non-luminescent region NEA2.

[0224] The first drive electrode 472 corresponds to the first touch electrode 482, and the second drive electrode 473 corresponds to the second touch electrode 483. The first drive electrode 472 is superimposed on the first touch electrode 482, and the second drive electrode 473 is superimposed on the second touch electrode 483.

[0225] The width of the first drive electrode 472 may be greater than or equal to the width of the first touch electrode 482, and the width of the second drive electrode 473 may be greater than or equal to the width of the second touch electrode 483. In one embodiment of the present invention, the width of the first drive electrode 472 may be greater than the width of the first touch electrode 482, and the width of the second drive electrode 473 may be greater than the width of the second touch electrode 483.

[0226] The center of the first drive electrode 472 is located in the first non-emitting region NEA1, and both ends of the first drive electrode 472 can extend into a portion of the first emitting region EA1 and a portion of the second emitting region EA2, respectively. The center of the second drive electrode 473 is located in the second non-emitting region NEA2, and both ends of the second touch electrode 473 can extend into a portion of the second emitting region EA2 and a portion of the third emitting region EA3, respectively.

[0227] The variable transmittance touch panel 470 may further include a bridge electrode 488 located below the touch electrode layer 481 and a touch buffer layer 486 located between the touch electrode layer 481 and the bridge electrode 488. A second touch electrode 483 can be connected to the bridge electrode 488 via a contact hole formed in the touch buffer layer 486.

[0228] The widths of the first touch electrode 482 and the second touch electrode 483 may be smaller than or equal to the width of the black matrix 191. Also, the widths of the first drive electrode 472 and the second drive electrode 473 may be larger than or equal to the width of the black matrix 191. In one embodiment of the present invention, the width of the black matrix 191 may be smaller than the widths of the first drive electrode 472 and the second drive electrode 473, and larger than the widths of the first touch electrode 482 and the second touch electrode 483.

[0229] A fourth embodiment of the present invention includes a light-emitting diode display device 400 located above the display panel 101, which includes a variable transmittance touch panel 470 whose transmittance can be adjusted, thereby minimizing the reflection of ambient light without reducing brightness.

[0230] In other words, the light-absorbing layer 178 of the variable transmittance touch panel 470 covers the sides of the spacer 180, which is located in the non-emitting regions NEA1 and NEA2 in the first drive mode and in the emitting regions EA1 and EA2 in the second drive mode. As a result, the brightness of the emitting regions EA1 and EA2 does not decrease in the first drive mode, and the reflection of ambient light in the emitting regions EA1 and EA2 can be reduced in the second drive mode.

[0231] Furthermore, by utilizing the touch electrode layer 481 to drive the light absorption layer 178, the addition of separate configurations to reduce reflection of ambient light can be minimized.

[0232] Furthermore, if the thickness of the spacer 180 is less than the distance between the drive electrode layer 471 and the touch electrode layer 481, the light absorption layer 178 can cover the upper end of the spacer 180, thereby further reducing the reflection of ambient light.

[0233] The present invention has been described above based on exemplary embodiments and examples, but the present invention is not limited to the technical ideas described in these embodiments and examples. Rather, anyone with ordinary skill in the art to which the present invention belongs can easily deduce various modifications and variations based on the embodiments and examples described above. However, it will be clear from the claims that such modifications and variations fall within the scope of the rights of the present invention. [Explanation of Symbols]

[0234] 100, 200, 300, 400…Light-emitting diode display device, 101…Display panel, 102…Substrate, 156…Bank, 160a…First electrode, 160b…Light-emitting layer, 160c…Second electrode, 156…Bank, 162…Capsule sealing layer, 164, 166…Buffer layer, 170, 270, 370, 470…Variable transmittance touch panel, 175, 275…Variable transmittance layer, 171, 271, 471…Drive electrode layer, 172, 173, 272, 273, 472, 473…Drive electrode, 178, 178a, 178b, 278, 278a, 278b…Light absorption layer, 180, 180a, 180 b, 180c, 280, 280a, 280b, 280c, 380, 380a, 380b, 380c…Spacer, 181, 281, 481…Touch electrode layer, 182, 183, 282, 283, 482, 483…Touch electrode, 190…Color filter panel, 191, 192, 193…Black matrix, 194…Color filter layer, 195, 196, 197…Color filter pattern, D…Organic light-emitting diode, T1, T2…Thin film transistor, P, P1, P2, P3…Pixel area, EA1, EA2, EA3…Light-emitting area, NEA1, NEA2…Non-light-emitting area

Claims

1. A display panel including a first pixel region, a second pixel region, and a third pixel region, and light-emitting diodes provided in each of the first light-emitting region of the first pixel region, the second light-emitting region of the second pixel region, and the third light-emitting region of the third pixel region, A variable transmittance layer including a first spacer, a second spacer, and a third spacer located on the display panel and positioned in the first light-emitting region, the second light-emitting region, and the third light-emitting region, respectively, and a light-absorbing layer located in the space between the first, second, and third spacers or on each side of the first, second, and third spacers, A drive electrode layer comprising a first drive electrode located on one side of the variable transmittance layer and provided in a first non-emitting region between the first light-emitting region and the second light-emitting region, and a second drive electrode provided in a second non-emitting region between the second light-emitting region and the third light-emitting region, A light-emitting diode display device comprising a touch electrode layer located on the other side of the variable transmittance layer, and including a first touch electrode corresponding to the first drive electrode and a second touch electrode corresponding to the second drive electrode.

2. The first drive electrode and the second drive electrode are located between the display panel and the transmittance variable layer. The light-emitting diode display device according to claim 1, wherein the first touch electrode has a width greater than that of the first drive electrode, and the second touch electrode has a width greater than that of the second drive electrode.

3. The first partition wall located in the first non-luminescent region, The present invention further includes a second partition located in the second non-emitting region, The light-emitting diode display device according to claim 1, wherein the first drive electrode is provided on both sides of one end of the first partition wall, and the second drive electrode is provided on both sides of one end of the second partition wall.

4. The light-emitting diode display device according to claim 3, wherein the light-absorbing layer includes a first light-absorbing layer located between the first spacer and the first partition wall, and between the second spacer and the first partition wall, and a second light-absorbing layer located between the second spacer and the second partition wall, and between the third spacer and the second partition wall.

5. On the variable transmittance layer, a first black matrix and a second black matrix are located in the first non-emitting region and the second non-emitting region, respectively. The device further includes a first color filter layer, a second color filter layer, and a third color filter layer located on the variable transmittance layer, corresponding to the first light-emitting region, the second light-emitting region, and the third light-emitting region, respectively. The light-emitting diode display device according to claim 3, wherein the width of the first partition is smaller than the width of the first black matrix, and the width of the second partition is smaller than the width of the second black matrix.

6. The light-emitting diode display device according to claim 1, wherein each of the first spacer, the second spacer, and the third spacer is dome-shaped.

7. The first touch electrode and the second touch electrode are located between the display panel and the variable transmittance layer. The light-emitting diode display device according to claim 1, wherein the first drive electrode has a width greater than that of the first touch electrode, and the second drive electrode has a width greater than that of the second touch electrode.

8. In the first driving mode, the light absorption layer is located within the first non-emitting region and the second non-emitting region, and the transmittance variable layer has a first transmittance in each of the first emitting region, the second emitting region, and the third emitting region. In the second driving mode, the light-absorbing layer covers each of the sides of the first spacer, the second spacer, and the third spacer, and the transmittance variable layer has a second transmittance lower than the first transmittance in each of the first light-emitting region, the second light-emitting region, and the third light-emitting region, as described in claim 1.

9. In the first driving mode, the light-absorbing layer is located within the first non-emitting region and the second non-emitting region, and the transmittance-variable layer has a third transmittance in each of the first non-emitting region and the second non-emitting region. In the second driving mode, the light-absorbing layer covers each of the sides of the first spacer, the second spacer, and the third spacer, and the transmittance variable layer has a fourth transmittance higher than the third transmittance in each of the first non-emitting region and the second non-emitting region, as described in claim 1.

10. In the first driving mode, the light-emitting diode is in the ON state, The light-emitting diode display device according to claim 8 or claim 9, wherein in the second driving mode, the light-emitting diode is in the off state.

11. The light-emitting diode display device according to claim 1, further comprising a bridge electrode located below or above the touch electrode layer and connected to the first touch electrode or the second touch electrode.

12. On the variable transmittance layer, a first black matrix and a second black matrix are located in the first non-emitting region and the second non-emitting region, respectively. The light-emitting diode display device according to claim 1, further comprising a first color filter layer, a second color filter layer, and a third color filter layer located on the transmittance variable layer, corresponding to the first light-emitting region, the second light-emitting region, and the third light-emitting region, respectively.

13. The light-emitting diode display device according to claim 12, wherein the display panel further includes a first bank located in the first non-light-emitting region and a second bank located in the second non-light-emitting region.

14. The width of the first bank is greater than the width of the first black matrix. The light-emitting diode display device according to claim 13, wherein the width of the second bank is greater than the width of the second black matrix.

15. The light-emitting diode display device according to claim 14, wherein the distance between the first spacer and the second spacer is less than or equal to the width of the first black matrix.

16. The width of the first drive electrode is less than or equal to the width of the first black matrix. The light-emitting diode display device according to claim 14, wherein the width of the second drive electrode is less than or equal to the width of the second black matrix.

17. The width of the first touch electrode is less than or equal to the width of the first black matrix. The light-emitting diode display device according to claim 14, wherein the width of the second touch electrode is less than or equal to the width of the second black matrix.

18. The light-emitting diode display device according to claim 1, wherein the thickness of each of the first spacer, the second spacer, and the third spacer is less than or equal to the distance between the drive electrode layer and the touch electrode layer.

19. The light-emitting diode display device according to claim 1, wherein the light-absorbing layer includes charged black particles.

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