Beer hall manufacturing method

Abstract

This invention provides a method for manufacturing beer halls that produces deep beer halls with excellent precision and reliability. [Solution] The method for manufacturing a via hole 471 includes a primary processing step of applying a long-wavelength laser to a predetermined position on the workpiece to form a primary hole 4711, and a secondary processing step of applying a short-wavelength laser to the position where the primary hole was formed to form a secondary hole 4712, thereby forming a via hole. The workpiece is a core substrate 10 on which an insulating layer 40 is placed, and the via hole is formed in the insulating layer.

Description

Technical Field

[0001] The embodiment relates to a method for manufacturing via holes, and more particularly to a method for manufacturing via holes that can manufacture deep via holes with excellent accuracy and reliability.

Background Art

[0002] Laser drilling refers to forming small holes and special via holes for connection between layers in an electronic device with a multilayer substrate using laser light.

[0003] Such a laser drilling technique is one of the via hole processing methods that has emerged to eliminate the limitations of circuit miniaturization and the increase in processing costs by using a mechanical drill to process via holes corresponding to the connection paths between layers of a multilayer substrate.

[0004] Although the laser drilling technique can form the via holes of a multilayer substrate more finely than in conventional machining and has the advantage of significantly reducing processing costs, another problem has occurred.

[0005] Currently, the laser drilling technique used in the manufacture of multilayer substrates requires hole cleaning to remove fine foreign matter generated inside the hole during the formation of the via hole when forming one hole.

[0006] If perfect cleaning is not performed, plating defects may occur during desmear and copper plating after the cleaning process. Also, after forming a hole of the desired size, a laser shot for cleaning must be performed again, which may cause a problem that a hole with a diameter larger than the design dimension is formed. To prevent this, problems and inconveniences such as an increase in unit man-hours, including the inconvenience of having to design and process the hole size with the last shot in mind in advance, may occur.

[0007] Relevant prior art includes Korean Registered Patent No. 10-0730782 and Korean Published Patent No. 10-2012-0096699. [Overview of the project] [Problems that the invention aims to solve]

[0008] The purpose of this embodiment is to provide a method for manufacturing beer halls that can reliably produce even deep beer halls with excellent accuracy. [Means for solving the problem]

[0009] A method for manufacturing a via hole according to an embodiment for achieving the above objective includes a primary processing step of applying a long-wavelength laser to a predetermined position on the workpiece to form a primary hole, and a secondary processing step of applying a short-wavelength laser to the position where the primary hole has been formed to form a secondary hole, thereby forming a via hole.

[0010] The object to be processed is a core substrate on which an insulating layer is arranged, and the via holes are formed in the insulating layer.

[0011] In the primary processing step, the surface of the object to be processed may be the insulating layer, or a polymer film laminated on the insulating layer.

[0012] The method for manufacturing a beer hall may further include a position correction step between the primary processing step and the secondary processing step.

[0013] The position correction step may involve checking the alignment marks, overlay coupon patterns, or all of these placed on the substrate to align the position of the primary hole in the primary processing step with the position of the center of the secondary hole formed in the secondary processing step.

[0014] The distance from the surface of the insulating layer to the bottom of the secondary hole may be 60 μm or more.

[0015] The distance from the surface of the insulating layer to the bottom of the primary hole may be within 40 μm.

[0016] A processing protection layer may be further disposed on the insulating layer, and the processing protection layer may be the polymer film.

[0017] A step S may exist at the boundary between the primary hole and the secondary hole.

[0018] The above manufacturing method may further include an insulating layer forming step before the primary processing step.

[0019] The insulating layer forming step includes the steps of: placing a laminate of insulating material and polymer film on the core substrate; under reduced pressure lamination conditions, the insulating material flows under the pressure applied by the polymer film, thereby rearranging the insulating material in the vacant spaces inside the core substrate and on the surface; and semi-curing or curing the insulating material. This process makes it possible to provide a workpiece in which an insulating layer is placed on the core substrate and a polymer film is placed on the insulating layer.

[0020] The manufacturing method may further include a cleaning step after the secondary processing step.

[0021] The cleaning step may include a step to remove particulate byproducts or smears generated during the formation of the primary hole and the secondary hole.

[0022] The cleaning step may include a desmearing process for removing the particulate by-products or smear by applying plasma or a desmearing chemical, and a protective layer removal process for removing the processed protective layer from the substrate after the desmearing process. [Effects of the Invention]

[0023] The manufacturing method for the beer halls in the example demonstrates that even deep beer halls can be manufactured with excellent accuracy and reliability.

Brief Description of the Drawings

[0024] [Figure 1] It is a conceptual diagram for explaining in cross-section a method for manufacturing a via hole according to an embodiment. [Figure 2] It is a conceptual diagram for explaining in cross-section a method for manufacturing a via hole according to an embodiment. [Figure 3] It is a conceptual diagram for explaining in cross-section that an electrode is formed on a via hole formed according to an embodiment. [Figure 4] It is a photograph of a via hole formed according to an embodiment as viewed from above, where the upper side shows the state of the primary hole and the lower side shows the state of the secondary hole.

Best Mode for Carrying Out the Invention

[0025] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings so that those having ordinary knowledge in the technical field to which the present invention pertains can easily implement them. However, the present invention can be realized in various different forms and is not limited to the embodiments described herein. The same reference numerals are given to similar parts throughout the specification.

[0026] Throughout this specification, the term "these combinations" included in the Markush-type expression means one or more mixtures or combinations selected from the group consisting of the components described in the Markush-type expression, and means including one or more selected from the group consisting of the said components.

[0027] Throughout this specification, terms such as "first", "second" or "A", "B" are used to distinguish the same terms from each other. Also, a singular expression includes a plural expression unless the context clearly indicates a different meaning.

[0028] In this specification, "~-based" may mean including a compound corresponding to "~" or a derivative of "~" in a compound.

[0029] In this specification, the meaning of B being located on A means either B being in direct contact with A, or B being located on A with other layers located between them, and is not limited to B being in contact with the surface of A.

[0030] In this specification, the meaning of B being connected to A means either that A and B are directly connected, or that A and B are connected through other components between them, and is not limited to the direct connection of A and B unless otherwise specified.

[0031] In this specification, unless otherwise specified, singular expressions are interpreted to include singular or plural, as interpreted in the context.

[0032] In this specification, the form, relative size, angles, etc., of each component in the drawings are illustrative and may be exaggerated for illustrative purposes, and the rights shall not be construed as being limited to the drawings.

[0033] In this specification, "adjacent to A and B" means that A and B are located touching each other, or that A and B are not touching but are located close to each other. In this specification, the expression "adjacent to A and B" is not construed to mean that A and B are located touching each other unless otherwise specified.

[0034] Figures 1 and 2 are conceptual diagrams illustrating the manufacturing method of a via hole according to the embodiment, in cross-section, and Figure 3 is a conceptual diagram illustrating the formation of electrodes in the via hole formed by the embodiment, in cross-section. Figure 4 is a photograph of the via hole formed by the embodiment viewed from above, with the upper part showing the primary hole and the lower part showing the secondary hole. The embodiment will be described in more detail below with reference to Figures 1 to 4.

[0035] The method for manufacturing a via hole according to the embodiment includes a primary processing step and a secondary processing step to form a via hole 471 in the insulating layer 40.

[0036] The primary processing step involves applying a CO2 laser L1 to a predetermined position on the workpiece to form a primary hole 4711.

[0037] The via holes 471 are formed in the insulating layer 40.

[0038] Via holes with a depth of approximately 30 μm or less can be manufactured by laser processing. However, via holes deeper than this depth are difficult to form with existing simple laser processing methods, and even if they are formed, problems such as excessively large openings or damage to other parts of the substrate may occur.

[0039] In this example, long-wavelength lasers and short-wavelength lasers are applied in the primary and secondary processing steps, respectively, to efficiently and reliably form deep via holes.

[0040] The aforementioned long-wavelength laser L1 may, for example, be a CO2 laser or a CO laser. While a CO2 laser will be described later as a typical example of a long-wavelength laser, this is not intended to exclude CO lasers; CO lasers can also be used as an alternative to CO2 lasers.

[0041] The short-wavelength laser L2 may, for example, be a UV laser.

[0042] The object to be processed may be one in which an insulating layer 40 is arranged on a core substrate 10 (Figure 1(a)).

[0043] The object to be processed may be one on which an insulating layer 40 and a polymer film 95 are arranged on a core substrate 10 (Figure 2(a)).

[0044] In the primary processing step, the surface of the object to be processed may be the insulating layer 40, or a polymer film 95 laminated on the insulating layer 40.

[0045] A processing protection layer is further arranged on the insulating layer 40, and the processing protection layer may be the polymer film 95.

[0046] For example, the polymer film 95 may be a film containing a polyimide resin, a polyethylene naphthalate resin, or a polyester terephthalate resin. For example, the polymer film 95 may be a PET film.

[0047] The polymer film 95 may have a thickness of 20 μm or more, 30 μm or more, 40 μm or more, or 50 μm or more. The thickness may also be 500 μm or less, 450 μm or less, 400 μm or less, 350 μm or less, 300 μm or less, 250 μm or less, 200 μm or less, or 150 μm or less.

[0048] Long-wavelength lasers (e.g., CO2 lasers, CO lasers) can remove both the insulating layer and the polymer film by applying relatively long wavelengths (Figure 1(b), Figure 2(b)). For example, the long-wavelength laser may have a wavelength of approximately 9.4 μm or longer. The long wavelength may be between approximately 9.4 μm and approximately 12 μm.

[0049] However, when attempting to form deep via holes with long-wavelength lasers, there is a risk of causing damage to the lower part of the via hole due to thermal shock, and in the case of greater depth, the number of shots required increases, which can lead to a rapid increase in the size of the opening hole.

[0050] One practical application is to apply a long-wavelength laser to a depth of approximately 40 μm or less, and then apply another laser in a secondary processing step thereafter.

[0051] That is, the distance from the surface of the insulating layer 40 to the bottom of the primary hole 4711 may be within 40 μm. The distance may be 10 μm or more, 15 μm or more, 20 μm or more, 25 μm or more, or 30 μm or more. The distance may be 40 μm or less, or 30 μm or less.

[0052] When forming via holes with a long-wavelength laser, it is possible to create a via hole with a relatively flat bottom surface.

[0053] In the via hole formation process using a long-wavelength laser, the removed insulating layer and other materials may become processing by-products, forming particulate by-products or smear.

[0054] If such particulate byproducts remain inside the via hole, cleaning may become difficult in subsequent processes, and wire breakage may occur. Therefore, to facilitate via formation and ensure the efficient progress of subsequent processes, blowing and / or suction (B / S) can be performed simultaneously with or after laser irradiation. Blowing may, but is not limited to, gases such as CDA (Clean Dry Air) or N2.

[0055] This particulate by-product or smear may be partially present within the via hole and may fall onto the insulating layer.

[0056] The secondary processing step involves forming a via hole 471 by applying a short-wavelength laser L2 to the position where the primary hole 4711 was formed to form a secondary hole 4712 (Figure 1(c), Figure 2(c)).

[0057] Short-wavelength lasers may have pulse widths of 400 nm or less.

[0058] The pulse width of the short-wavelength laser may be 400 nm or less, 350 nm or less, 340 nm or less, 330 nm or less, 320 nm or less, 310 nm or less, 300 nm or less, 290 nm or less, 280 nm or less, 270 nm or less, 260 nm or less, or 250 nm or less. The pulse width of the short-wavelength laser may be 100 nm or more.

[0059] The short-wavelength laser may have a pulse energy of 10 mJ or more, 15 mJ or more, 20 mJ or more, 25 mJ or more, 30 mJ or more, 35 mJ or more, or 40 mJ or more. The pulse energy may be 1 J or less. When such a pulse energy is applied, insulating layers and the like can be removed more efficiently.

[0060] The UV laser may have a pulse repetition rate of 10 Hz or higher, 50 Hz or higher, 100 Hz or higher, 300 Hz or higher, 600 Hz or higher, 900 Hz or higher, 1,000 Hz or higher, 2,000 Hz or higher, 3,000 Hz or higher, 4,000 Hz or higher, or 5,000 Hz or higher. The pulse repetition rate may be 10 kHz or lower.

[0061] The short-wavelength laser may have a pulse repetition rate of 5 kHz or more and 1 MHz or less, and an energy of 1 mJ or less.

[0062] The short-wavelength laser may have a pulse repetition rate of 1 Hz to 5 kHz and a high energy of 1 J or less.

[0063] Such short-wavelength lasers can process objects into shapes with high resolution while simultaneously applying relatively high repetition rates and relatively high energy.

[0064] Furthermore, especially when the depth is 20 μm or less, it is possible to realize reliable vias with a diameter of 20 μm or less.

[0065] Short-wavelength lasers can form deep via holes without expanding the aperture size. Furthermore, unlike long-wavelength lasers, short-wavelength lasers can relatively reduce damage to glass and metal, thus contributing to the formation of reliable via holes.

[0066] The short-wavelength laser forms secondary holes 4712, the depth of which may be approximately 10 μm or more, 15 μm or more, 20 μm or more, 25 μm or more, 30 μm or more, 35 μm or more, or 40 μm or more. The depth may also be 70 μm or less, 65 μm or less, 60 μm or less, 55 μm or less, or 50 μm or less.

[0067] When via holes are formed by this process, the distance from the surface of the insulating layer 40 to the bottom of the secondary hole 4712 may be 60 μm or more, 65 μm or more, 70 μm or more, 75 μm or more, 80 μm or more, 85 μm or more, 90 μm or more, or 100 μm or more. The distance may be 200 μm or less, 180 μm or less, 160 μm or less, 140 μm or less, 120 μm or less, or 110 μm or less. This is deeper than the depth of a normal via hole, and such via holes can be useful for efficient via hole formation and redistribution wiring formation.

[0068] The depth of the primary and secondary holes in a beer hall is referred to as the depth of the beer hall itself.

[0069] The depth of the primary hole may be 20% or more, 25% or more, or 30% or more of the depth of the beer hole. Alternatively, the depth of the primary hole may be 70% or less, 65% or less, 60% or less, 55% or less, or 50% or less of the depth of the beer hole. In such cases, the formation of the beer hole can be carried out more efficiently and with greater accuracy.

[0070] A position correction step may be further included between the primary processing step and the secondary processing step.

[0071] The position correction step involves checking the alignment marks (not shown), overlay coupon patterns (not shown), or all of these placed on the substrate to align the position of the primary hole 4711 in the primary processing step with the center position of the secondary hole 4712 formed in the secondary processing step.

[0072] The position correction step is a step that can improve the reliability of via hole formation.

[0073] Although the position correction step is exemplified as being performed between the primary processing step and the secondary processing step, if the laser is irradiated multiple times in each step, the position correction step can also be applied between each laser irradiation if necessary.

[0074] A step S may be formed at the boundary between the primary hole 4711 and the secondary hole 4712 (Figure 3(a)). This step can be caused by the difference in the size of the openings formed by the application of two different lasers. This step is observed as a step when viewed in cross-section.

[0075] When viewed from above, the via hole can be observed as two rings arranged side by side (see Figure 4). Specifically, referring to Figure 4, which is a photograph of the via hole after the primary processing step and the via hole after both the primary and secondary processing steps viewed from above, there is a difference in appearance between these two holes. In particular, the opening R2 of the secondary hole is positioned further inward compared to the opening R1 of the primary hole.

[0076] The position correction step may be performed again after the formation of the secondary hole. At this time, alignment marks (not shown), overlay coupon patterns (not shown), etc., can be checked. Alternatively, position correction can be performed by checking the arrangement of R1 and R2, the difference in distance between them due to the direction of the circle, etc.

[0077] The manufacturing method may further include a cleaning step after the secondary processing step.

[0078] The cleaning step is a step of removing particulate by-products 953 or smears 955 that are generated during the formation of the primary hole 4711 and the secondary hole 4712.

[0079] The particulate by-products 953 or smear 955 generated during the formation of the primary hole 4711 and the secondary hole 4712 can be removed by applying plasma or a desmear chemical (in the case of Figure 1).

[0080] The particulate by-products 953 or smear 955 generated during the formation of the primary hole 4711 and the secondary hole 4712 can be removed, and the polymer film 95 can be removed (in the case of Figure 2).

[0081] Specifically, the cleaning step may include a desmearing process for removing the particulate by-products 953 or smear 955 by applying plasma or a desmearing chemical, and a protective layer removal process for removing the polymer film 95 from the substrate after the desmearing process.

[0082] The cleaning step may include a smear removal step and a cleaning step.

[0083] The smear removal process may, for example, be performed as a wet desmear process.

[0084] The cleaning process may be a water-washing process, or it may be carried out by applying a cleaning solution containing acids and / or chemicals.

[0085] The above manufacturing method may further include an insulating layer forming step before the primary processing step.

[0086] The insulating layer formation step may include the steps of: placing a laminate of insulating material and polymer film 95 on the core substrate 10; the step of redistributing the insulating material in the voids inside and on the surface of the core substrate 10 under reduced pressure lamination conditions, thereby partially curing or curing the insulating material. Through this, the processed object can be provided in which an insulating layer 40 is placed on the core substrate 10 and a polymer film 95 is placed on the insulating layer 40. The insulating material may be an uncured sheet, and may, but is not limited to, Ajinomoto Build-Up Film.

[0087] The object to be processed may be a core substrate 10 on which an electrically conductive layer 30 and a core insulating layer 45 are arranged (see Figure 1(a)).

[0088] The core substrate may be made of glass plate, which is a highly insulating material that reduces the risk of parasitic element formation and has the advantage of being able to be produced in a large area compared to substrates such as silicon. The non-conductive property provides the advantage of being able to function even more stably, especially when high frequencies are applied. Exemplaryly, glass plate used in semiconductor processes may be used. For example, the core substrate may be made of borosilicate glass plate, alkali-free glass plate, etc., but is not limited to these.

[0089] The core substrate may have through-type through-vias (through-holes) that penetrate the glass plate in the thickness direction, and / or cavities that penetrate the glass plate in the thickness direction or form recessed surfaces. Through-electrodes are formed in the through-vias, enabling the transmission of electrical signals in the vertical direction of the glass core.

[0090] The core substrate thickness may be 300 μm or more. The core substrate thickness may be 300 μm or more, 350 μm or more, 400 μm or more, 450 μm or more, or 500 μm or more. The thickness may be 2000 μm or less, 1800 μm or less, 1500 μm or less, 1200 μm or less, 1000 μm or less, 800 μm or less, or 700 μm or less. When a core substrate of such thickness is applied, a core substrate that ensures a certain level of durability and functions as a support can be applied.

[0091] The formation of the electrically conductive layer may, for example, involve a process in which a copper layer is formed, such as copper plating. To efficiently carry out the copper plating, a seed layer or a sputtered layer may be applied.

[0092] An insulating layer may be placed on the electrically conductive layer, and by repeating the placement of the electrically conductive layer and the insulating layer, redistribution wiring can be formed above or below the core substrate.

[0093] The formation of via holes is necessary during this redistribution wiring process, and the method described in the example is particularly advantageous when forming deep via holes.

[0094] Exemplary, the via holes in the embodiment may be formed above or below the cavity element 50.

[0095] The cavity element 50 refers to an electronic element placed within the cavity of the core substrate 10. Exemplarially, a passive element such as an MLCC may be used. Exemplarily, an active element such as a transistor may be used. The cavity element may be a modular cavity element formed by molding two or more passive and / or active elements. The molding may be made of materials including, but are not limited to, LCP (liquid crystal polymer), EMC (Epoxy Molding Compound), ABF (Ajinomoto Build-up Film), or MPI (Modified Polyimide).

[0096] When cavity elements are placed within a cavity and an insulating layer is formed on top of them, the distance to the cavity elements may be greater than in the usual case. In such cases, the embodiment is particularly useful, but its application is not limited to this.

[0097] Although preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto. Various modifications and improvements by those skilled in the art, utilizing the basic concepts of the present invention as defined in the appended claims, also fall within the scope of the present invention. [Explanation of symbols]

[0098] 10 Core boards 50 Cavity elements 30 Electrically conductive layer 40 Insulating layer 45 Core insulating layer 95 Polymer film 953 Particulate By-products 955 Smear 4711 Primary Hall 4712 Second Hall 471 Beer Hall L1 Long-wavelength laser L2 Short-wavelength laser B / S blowing and suction S step R1 Primary Hall Opening R2 Secondary Hall Opening

Claims

1. A primary processing step involves applying a long-wavelength laser to a predetermined position on the workpiece to form a primary hole, The process includes a secondary processing step of forming a via hole by applying a short-wavelength laser to the position where the primary hole was formed to form a secondary hole, The object to be processed is a core substrate on which an insulating layer is placed. The via hole is formed in the insulating layer, and the method for manufacturing a via hole.

2. In the aforementioned primary processing step, the surface of the workpiece is, The method for manufacturing a beer hole according to claim 1, wherein the insulating layer, or a polymer film, is laminated on the insulating layer.

3. The primary processing step and the secondary processing step further include a position correction step, The position correction step is, A method for manufacturing a via hole according to claim 1, comprising the step of checking the alignment marks, overlay coupon patterns, or all of the above arranged on the substrate, and aligning the position of the primary hole in the primary processing step with the position of the center of the secondary hole formed in the secondary processing step.

4. The method for manufacturing a via hole according to claim 1, wherein the distance from the surface of the insulating layer to the bottom of the secondary hole is 60 μm or more.

5. The method for manufacturing a via hole according to claim 1, wherein the distance from the surface of the insulating layer to the bottom of the primary hole is within 40 μm.

6. A processing protection layer is further placed on the insulating layer. The method for manufacturing a via hole according to claim 2, wherein the processing protective layer is the polymer film.

7. The method for manufacturing a beer hall according to claim 1, wherein there is a step (S) at the boundary between the primary hole and the secondary hole.

8. The manufacturing method further includes an insulating layer forming step before the primary processing step, The insulating layer formation step is, A process of arranging a laminate of insulating material and polymer film on the core substrate, Under reduced pressure lamination conditions, the insulating material flows under the pressure applied by the polymer film, and the insulating material is rearranged in the voids inside the core substrate and on the surface. The process includes a step of partially curing or curing the insulating material, The method for manufacturing a via hole according to claim 1, wherein the object to be processed is provided having an insulating layer arranged on the core substrate and a polymer film arranged on the insulating layer.

9. The manufacturing method further includes a cleaning step after the secondary processing step, The cleaning step described above is: A method for producing via holes according to claim 1, comprising removing particulate by-products or smears generated during the formation of the primary hole and the secondary hole.

10. The cleaning step described above is: A desmearing process in which the particulate by-product or smear is removed by applying plasma or a desmearing chemical, A method for manufacturing a via hole according to claim 9, comprising a protective layer removal step of removing the processed protective layer from a substrate that has undergone the desmear step.

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