Elastic semiconductor

Abstract

The present invention provides a stretchable semiconductor device that reduces the impact of expansion and contraction on semiconductor elements and enables the stabilization of the operation of semiconductor elements. [Solution] The device comprises a stretchable resin substrate 2, a plurality of non-stretchable resin substrates 3 arranged on the stretchable resin substrate 2, semiconductor elements 4R, 4G, 4B arranged on the non-stretchable resin substrates 3, and a plurality of wiring layers 5a, 5b, 5c arranged in parallel on the stretchable resin substrate 2 and stretchable. The wiring layers 5a, 5b, 5c are formed from a fluid metal material in which metal particles are dispersed in liquid metal. A ridge portion 16 is provided at the side edge of the non-stretchable resin substrate 3, and the ridge portion 16 is located between adjacent wiring layers 5a, 5b, 5c and protrudes from the side edge of the non-stretchable resin substrate 3.

Description

Technical Field

[0001] The present invention relates to a stretchable semiconductor device.

Background Art

[0002] For example, there are stretchable semiconductor devices (see, for example, Patent Documents 1 and 2 below). Such stretchable semiconductor devices are necessary for driving electronic devices such as pressure-sensitive sensors and organic electroluminescence (EL) displays that can be deformed into three-dimensional shapes such as spherical surfaces and free-form surfaces.

[0003] Specifically, the following Patent Document 1 discloses a stretchable semiconductor element including a flexible substrate having a support surface and a semiconductor structure having a curved inner surface, wherein at least a part of the curved inner surface is bonded to the support surface of the flexible substrate.

[0004] Further, the following Patent Document 2 discloses a stretchable device in which one or more semiconductor-loaded base materials each formed by forming one or more semiconductor elements on a resin substrate and covering the semiconductor elements with an inner sealing layer are embedded in one or more stretchable resin films made of an elastomer, a conductive circuit connected to the semiconductor elements is formed on the stretchable resin film, and the periphery of the semiconductor-loaded base material is covered with an outer sealing layer.

Prior Art Literature

Patent Documents

[0005]

Patent Document 1

Patent Document 2

Summary of the Invention

Problem to be Solved by the Invention

[0006] Incidentally, in the aforementioned stretchable semiconductor device, semiconductor elements such as thin-film transistors (TFTs) are formed on a stretchable substrate. However, in conventional semiconductor devices, when the substrate is stretched or contracted, delamination tends to occur between the stretched portion of the substrate and the non-stretchable portion of the semiconductor element, which can lead to instability in the characteristics of the semiconductor element.

[0007] Furthermore, when the substrate is expanded or contracted, it becomes difficult to maintain an electrical connection between the wiring on the expanding or contracting substrate and the electrodes on the semiconductor element, which may lead to a disconnection.

[0008] This invention was proposed in view of the above conventional circumstances, and aims to provide a stretchable semiconductor device that reduces the impact of stretching on semiconductor elements and stabilizes the operation of semiconductor elements. [Means for solving the problem]

[0009] To achieve the above objective, the present invention provides the following means. [1] A stretchable resin substrate that can be stretched and retracted, A non-stretchable resin substrate placed on the stretchable resin substrate, A semiconductor element disposed on the non-stretchable resin substrate, The aforementioned stretchable resin substrate comprises a plurality of wiring layers arranged in parallel with each other and capable of stretching and contracting, The aforementioned wiring layer is formed from a fluid metal material in which metal particles are dispersed in a liquid metal. A ridge is provided at the side end of the non-stretchable resin substrate. The stretchable semiconductor device is characterized in that the ridge portion is located between adjacent wiring layers and protrudes from the side edge of the non-stretchable resin substrate. [2] The stretchable semiconductor device according to [1], characterized in that the ridge portion is located on both sides of the wiring layer and protrudes from the side edge of the non-stretchable resin substrate. [3] The expandable semiconductor device according to [1], characterized in that the ridge portion has a shape such that the tip end is located closer to the wiring layer than the base end. [4] The non-stretchable resin substrate is provided with an electrode layer that is electrically connected to the semiconductor element, The stretchable semiconductor device according to [1], characterized in that one end of the wiring layer is electrically connected to the electrode layer while extended and positioned on the non-stretchable resin substrate. [5] The stretchable resin substrate has adhesive properties, The stretchable semiconductor device according to [1], characterized in that the non-stretchable resin substrate is attached to the stretchable resin substrate by the adhesive force of the stretchable resin substrate. [6] The stretchable resin substrate is provided with an adhesive layer on the side facing the non-stretchable resin substrate, The stretchable semiconductor device according to [1], characterized in that the non-stretchable resin substrate is attached to the stretchable resin substrate via the adhesion layer. [7] The non-stretchable resin substrate is arranged in a plurality of parallel arrangements within the plane of the stretchable resin substrate, The semiconductor element is arranged on each of the surfaces of the plurality of non-stretchable resin substrates. The stretchable resin substrate is characterized in that it is stretchable between adjacent non-stretchable resin substrates, as described in [1] above. [Effects of the Invention]

[0010] As described above, the present invention makes it possible to provide a stretchable semiconductor device that reduces the impact of stretching on semiconductor elements and stabilizes the operation of semiconductor elements. [Brief explanation of the drawing]

[0011] [Figure 1] This is a plan view showing the configuration of a semiconductor device relating to one embodiment of the present invention. [Figure 2]It is an enlarged cross-sectional view of the main part of the semiconductor device taken along line A-A shown in Fig. 1. [Figure 3] It is an enlarged cross-sectional view of the main part of the semiconductor device taken along line B-B shown in Fig. 1. [Figure 4] It is an enlarged plan view of a part of the semiconductor device shown in Fig. 1. [Figure 5] It is a plan view showing a state where part of the fluid metal material forming the first wiring layer and the second wiring layer of the semiconductor device shown in Fig. 4 has flowed along the edge of the non-stretchable resin substrate. [Figure 6] It is a cross-sectional view for sequentially explaining the manufacturing steps of the semiconductor device shown in Fig. 1. [Figure 7] It is a cross-sectional view for sequentially explaining the manufacturing steps of the semiconductor device shown in Fig. 1. [Figure 8] It is a cross-sectional view for sequentially explaining the manufacturing steps of the semiconductor device shown in Fig. 1. [Figure 9] It is a cross-sectional view for sequentially explaining the manufacturing steps of the semiconductor device shown in Fig. 1. [Figure 10] It is a cross-sectional view for sequentially explaining the manufacturing steps of the semiconductor device shown in Fig. 1. [Figure 11] It is a cross-sectional view for sequentially explaining the manufacturing steps of the semiconductor device shown in Fig. 1. [Figure 12] It is a cross-sectional view for sequentially explaining the manufacturing steps of the semiconductor device shown in Fig. 1. DETAILED DESCRIPTION OF THE INVENTION

[0012] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that in the drawings used in the following description, characteristic portions may be enlarged for convenience in order to make the features easy to understand, and the dimensional ratios of respective components are not necessarily the same as actual ones. In addition, the materials, dimensions and the like exemplified in the following description are merely examples, the present invention is not necessarily limited thereto, and can be implemented with appropriate modifications without changing the gist of the present invention.

[0013] Furthermore, in the drawings shown below, an XYZ Cartesian coordinate system is set up, with the X-axis direction being the first direction X within the plane of the semiconductor device, the Y-axis direction being the second direction Y perpendicular to the first direction X within the plane of the semiconductor device, and the Z-axis direction being the third direction Z perpendicular to the plane of the semiconductor device.

[0014] (Semiconductor device) First, as an embodiment of the present invention, the configuration of the expandable semiconductor device 1 shown in Figures 1 to 5 will be described.

[0015] Figure 1 is a plan view showing the configuration of the semiconductor device 1. Figure 2 is an enlarged cross-sectional view of the main part of the semiconductor device 1 shown by line segment AA in Figure 1. Figure 3 is an enlarged cross-sectional view of the main part of the semiconductor device 1 shown by line segment BB in Figure 1. Figure 4 is an enlarged plan view of a part of the semiconductor device 1. Figure 5 is a plan view showing the state in which a portion of the fluid metal material L forming the first wiring layers 5a, 5b, 5c and the second wiring layer 6 of the semiconductor device 1 has flowed along the edge of the non-stretchable resin substrate 3.

[0016] As shown in Figures 1 to 3, the semiconductor device 1 of this embodiment comprises a stretchable resin substrate 2, a plurality of non-stretchable resin substrates 3 arranged on the surface of the stretchable resin substrate 2, a plurality of semiconductor elements 4R, 4G, 4B arranged on each surface of the non-stretchable resin substrates 3, and a plurality of stretchable first wiring layers 5a, 5b, 5c and a second wiring layer 6 arranged on the surface of the stretchable resin substrate 2.

[0017] The stretchable resin substrate 2 is a film substrate containing an acrylic adhesive composition having adhesive properties, and among these, it is preferable to use an acrylic resin that has excellent transparency, weather resistance, and heat resistance, as well as excellent conformability to uneven surfaces, curved surface adhesion, and holding power.

[0018] For the stretchable resin substrate 2, for example, an acrylic polymer containing 50% by mass or more of monomers having acryloyl groups and methacryloyl groups can be used as an acrylic adhesive composition having adhesive properties. The stretchable resin substrate 2 may also contain, for example, a rosin-based tackifying resin, a terpene-based tackifying resin, or an epoxy-based tackifying resin as the tackifying resin. Furthermore, the resin material constituting the film substrate of the stretchable resin substrate 2 is a resin with a tensile elongation of 100% or more, and can be an acrylic resin, a silicone resin, a styrene-butadiene resin, or the like. The thickness of the stretchable resin substrate 2 is preferably 0.005 to 1.5 mm, and more preferably 0.05 to 1 mm.

[0019] The adhesive strength of the stretchable resin substrate 2 is preferably 5N / 20mm or more, and more preferably 7N / 20mm or more, as measured by the 180° peel-off adhesive strength according to "JIS Z 0237". The high adhesive strength of the stretchable resin substrate 2 is a necessary element for suppressing delamination with the non-stretchable resin substrate 3 and for integrating them, and there is no particular upper limit on the adhesive strength.

[0020] To extend the lifespan and improve durability, the stretchable resin substrate 2 preferably has the ability to return to its original shape after being stretched. Specifically, it is preferable that the recovery rate after being stretched to 100% is 70% or more, and more preferably 85% or more. A low recovery rate makes it difficult to obtain sufficient durability. It is known that the recovery rate can be adjusted by changing the degree of crosslinking and the average molecular weight of the acrylic polymer, and this method can be used to adjust the substrate.

[0021] Multiple non-stretchable resin substrates 3 are flexible resin (plastic) film substrates, arranged in a matrix in a first direction X and a second direction Y that intersect (orthogonal in this embodiment) with each other within the plane of the stretchable resin substrate 2. Each non-stretchable resin substrate 3 can be attached to one side (surface) of the stretchable resin substrate 2 by the adhesive force of the stretchable resin substrate 2 described above.

[0022] For example, the non-stretchable resin substrate 3 can be made of polyimide (PI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polycarbonate (PC), nanocellulose, etc. Among these, it is preferable to use PI, which has excellent heat resistance and chemical resistance to the heat firing and chemical treatment required when forming semiconductor devices, etc. Furthermore, the thickness of the non-stretchable resin substrate 3 is preferably 0.1 to 100 μm, and more preferably 1 to 10 μm.

[0023] Furthermore, it is preferable that the non-stretchable resin substrate 3 is attached to the stretchable resin substrate 2 via an adhesion layer 7. The adhesion layer 7 is a layer for improving the adhesion between the stretchable resin substrate 2, which is the stretchable portion, and the non-stretchable resin substrate 3, which is the non-stretchable portion, and is formed on the surface of the non-stretchable resin substrate 3 that faces the stretchable resin substrate 2.

[0024] The adhesion layer 7 may consist of, for example, a silicon oxide (SiO2) film or silicon nitride (SiN x Inorganic oxide films such as ) films, or laminated films thereof, can be used. Furthermore, the thickness of the adhesion layer 7 is preferably 5 to 200 nm, and more preferably 10 to 20 nm.

[0025] Multiple semiconductor elements 4R, 4G, and 4B consist of light-emitting diode (LED) elements (hereinafter referred to as "LED elements" as needed) corresponding to the three primary colors, for example, red (R), green (G), and blue (B).

[0026] In this embodiment, a single light-emitting unit 40 is formed by arranging a red light-emitting LED element 4R, a green light-emitting LED element 4G, and a blue light-emitting LED element 4R in a first direction X on the surface of each non-stretchable resin substrate 3.

[0027] In other words, in the semiconductor device 1 of this embodiment, these multiple LED elements 4R, 4G, and 4B form a single light-emitting unit 40, and this light-emitting unit 40 is arranged periodically in a first direction X and a second direction Y within the plane of the stretchable resin substrate 2 for each non-stretchable resin substrate 3, thereby constituting a single display panel. Therefore, in the semiconductor device 1 of this embodiment, color display is possible by controlling the lighting of each light-emitting unit 40 as a display device.

[0028] On the surface of each non-stretchable resin substrate 3, in addition to the multiple LED elements 4R, 4G, and 4B described above, there is a lower electrode layer 8, an interlayer insulating layer 9, a first upper electrode layer 10a and a second upper electrode layer 10b for each LED element 4R, 4G, and 4B, a pair of first connection terminals 11 and a pair of second connection terminals 12 for each LED element 4R, 4G, and 4B, a first through electrode 13 and a pair of second through electrodes 14 for each LED element 4R, 4G, and 4B.

[0029] The lower electrode layer 8 is provided extending in a first direction in the central portion of the surface of the non-stretchable resin substrate 3. For the lower electrode layer 8, a conductive material can be used, such as a metal or alloy thereof, such as titanium (Ti), chromium (Cr), aluminum (Al), molybdenum (Mo), gold (Au), silver (Ag), or copper (Cu), or a laminate of two or more of these metals.

[0030] The interlayer insulating layer 9 is provided so as to cover the entire surface of the non-stretchable resin substrate 3 on which the lower electrode layer 8 is provided. The interlayer insulating layer 9 is made of, for example, silicon nitride (SiN x ) films or silicon oxide (SiO2) can be used.

[0031] The first and second upper electrode layers 10a and 10b are arranged in the first direction X on the surface of the interlayer insulating layer 9, extending in the second direction Y, corresponding to each of the LED elements 4R, 4G, and 4B. The same conductive material as exemplified in the lower electrode layer 8 described above can be used for the first and second upper electrode layers 10a and 10b.

[0032] Each LED element 4R, 4G, and 4B is mounted on the first and second upper electrode layers 10a and 10b, respectively, so as to electrically connect them to the first upper electrode layer 10a and the second upper electrode layer 10b. Specifically, one end of each LED element 4R, 4G, and 4B is electrically connected to the middle portion of the first upper electrode layer 10a, and the other end of each LED element 4R, 4G, and 4B is electrically connected to one end of the second upper electrode layer 10b.

[0033] The pair of first connection terminals 11 are formed in a rectangular shape on the surface of the interlayer insulating layer 9, corresponding to each of the LED elements 4R, 4G, and 4B, and are positioned at the center and corners of the side ends located on both sides in the second direction Y. The first connection terminals 11 can be formed integrally with the first upper electrode layer 10a using the same material as exemplified in the lower electrode layer 8 described above.

[0034] As a result, both ends of the first upper electrode layer 10a corresponding to LED element 4R are electrically connected to a pair of first connection terminals 11 provided at one corner of the side end located on both sides in the second direction Y. On the other hand, both ends of the first upper electrode layer 10a corresponding to LED element 4G are electrically connected to a pair of first connection terminals 11 provided at the center of the side end located on both sides in the second direction Y. On the other hand, both ends of the first upper electrode layer 10a corresponding to LED element 4B are electrically connected to a pair of first connection terminals 11 provided at the other corner of the side end located on both sides in the second direction Y.

[0035] The pair of second connection terminals 12 are formed in a rectangular shape on the surface of the interlayer insulating layer 9 and are positioned in the center of the side ends located on both sides in the first direction X. The same material as exemplified in the lower electrode layer 8 described above can be used for the second connection terminals 12.

[0036] The first through-electrode 13 is provided embedded in a hole that penetrates the interlayer insulating layer 9. The first through-electrode 13 can be made of a conductive material such as a metal or alloy thereof, such as titanium (Ti), chromium (Cr), aluminum (Al), molybdenum (Mo), gold (Au), silver (Ag), or copper (Cu). The first through-electrode 13 electrically connects the other end of the second upper electrode layer 10b, which is provided corresponding to each of the LED elements 4R, 4G, and 4B, to the lower electrode layer 8.

[0037] The pair of second through electrodes 14 are located on both sides of the light-emitting unit 40 in the first direction X and are embedded in holes that penetrate the interlayer insulating layer 9. The pair of second through electrodes 14 can be made of the same conductive material as exemplified for the first through electrode 13 described above. The pair of second through electrodes 14 electrically connect both ends of the lower electrode layer 8 in the first direction X to the pair of second connection terminals 12.

[0038] In this embodiment, the semiconductor device 1 is provided with a protective layer 15 that covers the surface of the non-stretchable resin substrate 3 on which at least the LED elements 4R, 4G, and 4B are arranged. The protective layer 15 has the effect of suppressing distortion of the LED elements 4R, 4G, and 4B arranged on the surface of the non-stretchable resin substrate 3 and stabilizing the characteristics of the LED elements 4R, 4G, and 4B.

[0039] For the protective layer 15, an organic film such as an epoxy resin, olefin resin, acrylic resin, or polyimide resin can be used. Among these, it is preferable to use a photoreactive epoxy resin that can be made into a thick film of 1 μm or more and that can be patterned by light. Specifically, a negative-type photoresist material such as SU-8 can be used. Furthermore, the thickness of the protective layer 15 is preferably 0.1 to 5 μm, and more preferably 1 to 2 μm.

[0040] The first wiring layers 5a, 5b, 5c and the second wiring layer 6 are formed from a fluid metal material, for example, a liquid metal in which metal particles are dispersed.

[0041] Liquid metals that can be used include, for example, eutectic alloys containing gallium (Ga) and indium (In), or eutectic alloys containing Ga, In, and tin (Sn). Furthermore, by using Ga as the main component and adjusting the amount of In and Sn added, it is possible to change the melting point.

[0042] Examples of metal particles that can be used include nickel (Ni), Au, Ag, Cu, and Si. Because the interatomic forces of the aforementioned liquid metals are very strong, their surface energy is high and their wettability is very poor. Therefore, it is possible to improve the wettability by adding the aforementioned metal particles.

[0043] For example, by mixing 1 to 20% by mass of Ni particles with an average particle size of 1 to 50 μm with a liquid metal containing gallium (Ga) and indium (In), a paste is formed, enabling the formation of the first wiring layers 5a, 5b, 5c and the second wiring layer 6 by printing.

[0044] The first wiring layers 5a, 5b, and 5c are arranged on the surface of the stretchable resin substrate 2, extending in the second direction Y and aligned in the first direction X, corresponding to each of the LED elements 4R, 4G, and 4B. Furthermore, both ends of the first wiring layers 5a, 5b, and 5c are extended and positioned on adjacent non-stretchable resin substrates 3 in the second direction Y, and are electrically connected to the first connection terminals 11. As a result, the first wiring layers 5a, 5b, and 5c are arranged in parallel with each other and are expandable and contractible between adjacent non-stretchable resin substrates 3 in the second direction Y.

[0045] The second wiring layer 6 is provided on the surface of the stretchable resin substrate 2, extending in the first direction X. Furthermore, both ends of the second wiring layer 6 are extended and positioned on adjacent non-stretchable resin substrates 3 in the first direction X, and are electrically connected to the second connection terminal 12. As a result, the second wiring layer 6 is provided so as to be stretchable between adjacent non-stretchable resin substrates 3 in the first direction X.

[0046] Incidentally, in the semiconductor device 1 of this embodiment, as shown in Figure 4, a ridge portion 16 is provided at the side edge of the non-stretchable resin substrate 3. The ridge portion 16 is located between adjacent first wiring layers 5a, 5b, and 5c (in the middle in this embodiment) and is provided protruding from the side edge of the non-stretchable resin substrate 3 along the first direction X. Furthermore, the ridge portion 16 is located on both sides of the second wiring layer 6 and is provided protruding from the side edge of the non-stretchable resin substrate 3 along the second direction Y.

[0047] The ridge portion 16 has a shape such that its tip end is closer to the first wiring layer 5a, 5b, 5c or the second wiring layer 6 than its base end. Specifically, in this embodiment, the width of the ridge portion 16 gradually increases from the base end to the tip end. As a result, the side ends on both sides of the ridge portion 16 are inclined at an acute angle (so-called reverse taper) with respect to the side end of the non-stretchable resin substrate 3 on which the ridge portion 16 is located. Furthermore, the tip of the ridge portion 16 is positioned parallel to the side end of the non-stretchable resin substrate 3 on which the ridge portion 16 is located.

[0048] In the semiconductor device 1 of this embodiment having the above configuration, the stretchable resin substrate 2 is stretchable between adjacent non-stretchable resin substrates 3.

[0049] As a result, when the stretchable resin substrate 2 is stretched in the first direction X and the second direction Y, the LED elements 4R, 4G, and 4B are provided on the non-stretchable resin substrate 3, which is the non-stretchable portion. Therefore, it is possible to reduce the effect of the stretching and contracting of the stretchable resin substrate 2 on these LED elements 4R, 4G, and 4B.

[0050] Furthermore, in the semiconductor device 1 of this embodiment, the first wiring layers 5a, 5b, and 5c are provided to be expandable and contractible in accordance with the expansion and contraction of the stretchable resin substrate 2 in the first direction X described above. As a result, even when the stretchable resin substrate 2 is expanded or contracted in the first direction X, it is possible to maintain the electrical connection between each of the first wiring layers 5a, 5b, and 5c and each of the first connection terminals 11.

[0051] On the other hand, in the semiconductor device 1 of this embodiment, the second wiring layer 6 is provided so as to be expandable and contractible in accordance with the expansion and contraction of the stretchable resin substrate 2 in the second direction Y. As a result, even when the stretchable resin substrate 2 is expanded or contracted in the second direction Y, it is possible to maintain the electrical connection between each second wiring layer 6 and each second connection terminal 12.

[0052] Furthermore, in the semiconductor device 1 of this embodiment, as shown in Figure 5, as the stretchable resin substrate 2 expands and contracts, some of the fluid metal material L that forms the first wiring layers 5a, 5b, 5c and the second wiring layer 6 may flow along the edge of the non-stretchable resin substrate 3.

[0053] In contrast, in the semiconductor device 1 of this embodiment, a ridge portion 16 is provided protruding from the side edge of the non-stretchable resin substrate 3 along the first direction X, positioned between adjacent first wiring layers 5a, 5b, and 5c as described above.

[0054] In the semiconductor device 1 of this embodiment, when a portion of the fluid metal material L forming the first wiring layers 5a, 5b, and 5c flows along the edge of the non-stretchable resin substrate 3, the dam portion 16 blocks the fluid metal material L.

[0055] In particular, in the semiconductor device 1 of this embodiment, since the side ends of the dam portion 16 described above are inclined in a reverse taper shape from the base end to the tip end, it is possible to prevent the fluid metal material L that has flowed along one side end of the dam portion 16 from flowing around from the tip end to the other side end of the dam portion 16. Furthermore, the dam portion 16 described above makes it possible to obtain the distance necessary for the fluid metal material L to flow around.

[0056] As a result, in the semiconductor device 1 of this embodiment, it is possible to prevent the fluid metal material L from coming into contact with adjacent first wiring layers 5a, 5b, and 5c and causing leakage between them.

[0057] On the other hand, in the semiconductor device 1 of this embodiment, the ridge portion 16 is provided protruding from the side edge of the non-stretchable resin substrate 3 along the second direction Y, located on both sides of the second wiring layer 6 described above.

[0058] In the semiconductor device 1 of this embodiment, when a portion of the fluid metal material L forming the second wiring layer 6 flows along the edge of the non-stretchable resin substrate 3, the dam portion 16 blocks the fluid metal material L.

[0059] In particular, in the semiconductor device 1 of this embodiment, since the side ends of the dam portion 16 described above are inclined in a reverse taper shape from the base end to the tip end, it is possible to prevent the fluid metal material L that has flowed along one side end of the dam portion 16 from flowing around from the tip end to the other side end of the dam portion 16. Furthermore, the dam portion 16 described above makes it possible to obtain the distance necessary for the fluid metal material L to flow around.

[0060] As described above, in the semiconductor device 1 of this embodiment, even if some of the fluid metal material L forming the first wiring layers 5a, 5b, 5c and the second wiring layer 6 flows along the edge of the non-stretchable resin substrate 3, it is possible to reduce the impact on the LED elements 4R, 4G, 4B due to the expansion and contraction of the stretchable resin substrate 2 and stabilize the operation of the LED elements 4R, 4G, 4B.

[0061] (Method of manufacturing semiconductor devices) Next, the manufacturing method of the semiconductor device 1 will be explained with reference to Figures 6 to 12. Figures 6 to 12 are cross-sectional views illustrating the manufacturing process of semiconductor device 1 in sequence. Furthermore, Figures 6 to 12 show cross-sectional views corresponding to line segment AA shown in Figure 1.

[0062] When manufacturing the semiconductor device 1 described above, first, as shown in Figure 6, a non-stretchable resin substrate 30, which will become a plurality of non-stretchable resin substrates 3, is formed on a first support substrate 21. Specifically, a glass substrate is used for the first support substrate 21, and a coating liquid containing PI, which will become the non-stretchable resin substrate 3 as described above, is applied to this first support substrate 21 by spin coating to form a coating film. After this coating film is dried (fired), a non-stretchable resin substrate 30 made of PI film is formed.

[0063] Next, as shown in Figure 7, multiple non-stretchable resin substrates 3 are formed by removing the area around each portion of the non-stretchable resin base material 30 that will become a non-stretchable resin substrate 3 using dry etching or wet etching with photolithography technology.

[0064] Furthermore, when forming multiple non-stretchable resin substrates 3, a ridge portion 16 is formed that protrudes from the side edge of each non-stretchable resin substrate 3.

[0065] Next, as shown in Figure 8, a lower electrode layer 8, an interlayer insulating layer 9, a first through electrode 13 and a second through electrode 14, a first upper electrode layer 10a, a second upper electrode layer 10b, a first connection terminal 11, and a second connection terminal 12 are sequentially formed on each non-stretchable resin substrate 3. The interlayer insulating layer 9 may be formed on the ridge portion 16, or it may be removed from above the ridge portion 16.

[0066] Next, as shown in Figure 9, the second support substrate 23 is attached to the multiple non-stretchable resin substrates 3 via a removable film tape 22.

[0067] Next, as shown in Figure 10, the first support substrate 21 is peeled off. Specifically, using laser lift-off, laser light is irradiated from the side of the first support substrate 21, and the interface between the multiple non-stretchable resin substrates 3 and the first support substrate 21 is ablated, thereby removing the first support substrate 21 that has been peeled off from the multiple non-stretchable resin substrates 3.

[0068] Next, as shown in Figure 11, a stretchable resin substrate 2 is attached to a plurality of non-stretchable resin substrates 3 via an adhesion layer 7.

[0069] Next, as shown in Figure 12, the second support substrate 23 is peeled off and removed from the multiple non-stretchable resin substrates 3 together with the re-peelable film tape 22. Then, the first wiring layers 5a, 5b, 5c and the second wiring layer 6 are formed on the stretchable resin substrate 2 using the fluid metal material described above.

[0070] Subsequently, LED elements 4R, 4G, and 4B are mounted on each non-stretchable resin substrate 3 so as to be electrically connected to the first upper electrode layer 10a and the second upper electrode layer 10b of each non-stretchable resin substrate 3. By following the above steps, it is possible to fabricate the semiconductor device 1 shown in Figure 1.

[0071] In the manufacturing method of the semiconductor device 1 of this embodiment, it is possible to reduce the impact on the LED elements 4R, 4G, and 4B due to the expansion and contraction of the stretchable resin substrate 2 described above, thereby stabilizing the operation of the LED elements 4R, 4G, and 4B, and to manufacture the semiconductor device 1 with a high yield.

[0072] It should be noted that the present invention is not necessarily limited to the embodiments described above, and various modifications can be made without departing from the spirit of the invention.

[0073] For example, the shape of the dam portion 16 is not limited to the inverted tapered shape described above. It can be shaped such that the tip end of the dam portion 16 is closer to the first wiring layer 5a, 5b, 5c or the second wiring layer 6 than the base end end. This makes it possible to enhance the damming effect of the dam portion 16 on the fluid metal material L and the effect of gaining the distance necessary for the fluid metal material L to wrap around it.

[0074] Furthermore, the dam portion 16 is not limited to being located between adjacent first wiring layers 5a, 5b, and 5c as described above, but may also be located on both sides of each first wiring layer 5a, 5b, and 5c.

[0075] Furthermore, the dam portion 16 is not limited to being positioned at a distance from the first wiring layers 5a, 5b, 5c or the second wiring layer 6 as described above, but may also be positioned in contact with at least a part of the first wiring layers 5a, 5b, 5c or the second wiring layer 6.

[0076] The stretchable resin substrate 2 is not necessarily limited to those having adhesive properties as described above, and may be non-adhesive. In this case, the non-stretchable resin substrate 3 can be attached to the stretchable resin substrate 2 via the adhesive layer 7.

[0077] Furthermore, although the semiconductor device 1 of this embodiment is configured to include LED elements 4R, 4G, and 4B as semiconductor elements, by forming TFTs or the like on each non-stretchable resin substrate 3, and having each non-stretchable resin substrate 3 constitute a single pixel device, it is possible to realize a stretchable display that can be stretched and compressed, as well as a display that can be deformed into three-dimensional shapes such as spheres and free-form surfaces. When configuring the pixel device, it is also possible to use light-emitting elements such as organic electroluminescent (EL) elements instead of the LED elements 4R, 4G, and 4B mentioned above.

[0078] Furthermore, the semiconductor device to which the present invention is applied is not necessarily limited to the configuration equipped with the light-emitting element described above, but can also be an electronic device equipped with semiconductor elements such as a light-receiving element, a strain sensor, or a pressure sensor. [Explanation of Symbols]

[0079] 1... Semiconductor device 2... Stretchable resin substrate 3... Non-stretchable resin substrate 4R, 4G, 4B... Semiconductor element (LED element) 5a, 5b, 5c... First wiring layer 6... Second wiring layer 7... Adhesion layer 8... Lower electrode layer 9... Interlayer insulating layer 10a... First upper electrode layer 10b... Second upper electrode layer 11... First connection terminal 12... Second connection terminal 13... First through electrode 14... Second through electrode 15... Protective layer 16... Ridge L... Flowable metal material

Claims

1. A stretchable resin substrate that can be stretched and contracted, A plurality of non-stretchable resin substrates are arranged on the stretchable resin substrate, A semiconductor element disposed on the non-stretchable resin substrate, The aforementioned stretchable resin substrate comprises a plurality of wiring layers arranged in parallel with each other and capable of stretching and contracting, The aforementioned wiring layer is formed from a fluid metal material in which metal particles are dispersed in a liquid metal. A ridge is provided at the side end of the non-stretchable resin substrate. The stretchable semiconductor device is characterized in that the ridge portion is located between adjacent wiring layers and protrudes from the side edge of the non-stretchable resin substrate.

2. The stretchable semiconductor device according to claim 1, characterized in that the ridge portion is located on both sides of the wiring layer and protrudes from the side edge of the non-stretchable resin substrate.

3. The expandable semiconductor device according to claim 1, characterized in that the ridge portion has a shape such that its tip end is located closer to the wiring layer than its base end.

4. The non-stretchable resin substrate is disposed on the aforementioned non-stretchable resin substrate and comprises an electrode layer electrically connected to the semiconductor element, The stretchable semiconductor device according to claim 1, characterized in that one end of the wiring layer is electrically connected to the electrode layer while extended and positioned on the non-stretchable resin substrate.

5. The aforementioned stretchable resin substrate has adhesive properties, The stretchable semiconductor device according to claim 1, characterized in that the non-stretchable resin substrate is attached to the stretchable resin substrate by the adhesive force of the stretchable resin substrate.

6. The stretchable resin substrate is provided with an adhesive layer on the side facing the non-stretchable resin substrate, The stretchable semiconductor device according to claim 1, characterized in that the non-stretchable resin substrate is attached to the stretchable resin substrate via the adhesion layer.

7. The non-stretchable resin substrates are arranged in a plurality within the plane of the stretchable resin substrate, The semiconductor element is arranged on each of the surfaces of the plurality of non-stretchable resin substrates. The stretchable resin substrate is characterized in that it is stretchable between adjacent non-stretchable resin substrates, as described in claim 1.

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