Elastic semiconductor

Abstract

The present invention provides a stretchable semiconductor device that reduces the impact of expansion and contraction on semiconductor elements and enables the stabilization of the operation of semiconductor elements. [Solution] The device comprises a stretchable resin substrate 2, a plurality of non-stretchable resin substrates 3 arranged side by side on the surface of the stretchable resin substrate 2, a plurality of semiconductor elements 4 arranged on the surface of each of the plurality of non-stretchable resin substrates 3, a plurality of wiring layers 5, 6 provided on the side of the stretchable resin substrate 2 facing the non-stretchable resin substrates 3 so as to be stretchable between adjacent non-stretchable resin substrates 3, and non-stretchable restricting portions 11a, 11b provided on the side of the stretchable resin substrate 2 facing the wiring layers 5, 6. The wiring layers 5, 6 are formed from a fluid metal material in which metal particles are dispersed in liquid metal, and the restricting portions 11a, 11b are positioned along the wiring layers 5, 6.

Description

[Technical Field]

[0001] The present invention relates to a stretchable semiconductor device. [Background Art]

[0002] For example, there are stretchable semiconductor devices (see, for example, Patent Documents 1 and 2 below). Such stretchable semiconductor devices are necessary for driving electronic devices such as organic electroluminescence (EL) displays deformable into three-dimensional shapes such as spherical surfaces and free-form surfaces, and pressure-sensitive sensors.

[0003] Specifically, Patent Document 1 below discloses a stretchable semiconductor element including a flexible substrate having a support surface and a semiconductor structure having a curved inner surface, wherein at least a part of the curved inner surface is bonded to the support surface of the flexible substrate.

[0004] Further, Patent Document 2 below discloses a stretchable device in which one or more semiconductor-carrying base materials, each formed by forming one or more semiconductor elements on a resin substrate and covering the semiconductor elements with an inner sealing layer, are embedded in one or more stretchable resin films made of an elastomer, a conductive circuit connected to the semiconductor elements is formed on the stretchable resin film, and the periphery of the semiconductor-carrying base material is covered with an outer sealing layer. [Prior Art Documents] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2007-281406 [Patent Document 2] Japanese Patent Application Laid-Open No. 2015-149364 [Summary of the Invention] [Problem to be Solved by the Invention]

[0006] Incidentally, in the aforementioned stretchable semiconductor device, semiconductor elements such as thin-film transistors (TFTs) are formed on a stretchable substrate. However, in conventional semiconductor devices, when the substrate is stretched or contracted, delamination tends to occur between the stretched portion of the substrate and the non-stretchable portion of the semiconductor element, which can lead to instability in the characteristics of the semiconductor element.

[0007] Furthermore, when the substrate is expanded or contracted, it becomes difficult to maintain an electrical connection between the wiring on the expanding or contracting substrate and the electrodes on the semiconductor element, which may lead to a disconnection.

[0008] This invention was proposed in view of the above conventional circumstances, and aims to provide a stretchable semiconductor device that reduces the impact of stretching on semiconductor elements and stabilizes the operation of semiconductor elements. [Means for solving the problem]

[0009] To achieve the above objective, the present invention provides the following means. [1] A stretchable resin substrate that can be stretched and retracted, A plurality of non-stretchable resin substrates arranged side by side on the surface of the stretchable resin substrate, A plurality of semiconductor elements arranged on each surface of the plurality of non-stretchable resin substrates, On the side of the stretchable resin substrate facing the non-stretchable resin substrate, there are a plurality of wiring layers provided so as to be stretchable between adjacent non-stretchable resin substrates, The stretchable resin substrate comprises a non-stretchable restricting portion provided on the side facing the wiring layer, The aforementioned wiring layer is formed from a fluid metal material in which metal particles are dispersed in a liquid metal. The restricting portion is characterized by being positioned along the wiring layer, and the semiconductor device is expandable. [2] The stretchable semiconductor device according to [1], characterized in that the restricting portion is arranged on at least one or both sides of the wiring layer. [3] The stretchable semiconductor device according to [1], characterized in that the restricting portion is arranged adjacent to or in contact with the wiring layer. [4] The stretchable semiconductor device according to [1], characterized in that the restricting portion is located between adjacent non-stretchable resin substrates and is arranged in a row in the direction in which the wiring layer extends. [5] The expandable semiconductor device according to [4], characterized in that, among the plurality of restricting portions arranged in the direction in which the wiring layer extends, the restricting portion on one side of the wiring layer and the restricting portion on the other side are arranged facing each other. [6] The expandable semiconductor device according to [4], characterized in that, among the plurality of restricting portions arranged in the direction in which the wiring layer extends, the restricting portion on one side of the wiring layer and the restricting portion on the other side are arranged in an alternating positional shift. [7] The stretchable semiconductor device according to [4], characterized in that, among the plurality of restricting portions arranged in the direction in which the wiring layer extends, the restricting portion adjacent to the non-stretchable resin substrate is arranged continuously with the adjacent non-stretchable resin substrate. [8] The non-stretchable resin substrate is provided with an electrode layer which is electrically connected to the semiconductor element, The stretchable semiconductor device according to [1], characterized in that one end of the wiring layer is electrically connected to the electrode layer while extended and positioned on the non-stretchable resin substrate. [9] The stretchable resin substrate has adhesive properties, The stretchable semiconductor device according to [1], characterized in that the non-stretchable resin substrate is attached to the stretchable resin substrate by the adhesive force of the stretchable resin substrate.

[10] The stretchable resin substrate is provided with an adhesive layer on the side of the stretchable resin substrate that faces the non-stretchable resin substrate, The stretchable semiconductor device according to [1], characterized in that the non-stretchable resin substrate is attached to the stretchable resin substrate via the adhesion layer. [Effects of the Invention]

[0010] As described above, according to the present invention, it is possible to provide a stretchable semiconductor device that reduces the influence of stretching and contracting on the semiconductor element and enables stabilization of the operation of the semiconductor element. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] [Figure 1] FIG. 1 is a plan view showing the configuration of the semiconductor device according to the first embodiment of the present invention. [Figure 2] FIG. 2 is an enlarged cross-sectional view of a main part of the semiconductor device taken along line segment A-A shown in FIG. 1. [Figure 3] FIG. 3 is an enlarged cross-sectional view of a main part of the semiconductor device taken along line segment B-B shown in FIG. 1. [Figure 4] FIG. 4 is an enlarged plan view of a part of the semiconductor device shown in FIG. 1. [Figure 5] FIG. 5 is an enlarged cross-sectional view of a part of the semiconductor device taken along line segment C-C shown in FIG. 4. [Figure 6] FIG. 6 is a cross-sectional view for sequentially explaining the manufacturing steps of the semiconductor device shown in FIG. 1. [Figure 7] FIG. 7 is a cross-sectional view for sequentially explaining the manufacturing steps of the semiconductor device shown in FIG. 1. [Figure 8] FIG. 8 is a cross-sectional view for sequentially explaining the manufacturing steps of the semiconductor device shown in FIG. 1. [Figure 9] FIG. 9 is a cross-sectional view for sequentially explaining the manufacturing steps of the semiconductor device shown in FIG. 1. [Figure 10] FIG. 10 is a cross-sectional view for sequentially explaining the manufacturing steps of the semiconductor device shown in FIG. 1. [Figure 11] FIG. 11 is a cross-sectional view for sequentially explaining the manufacturing steps of the semiconductor device shown in FIG. 1. [Figure 12] FIG. 12 is a cross-sectional view for sequentially explaining the manufacturing steps of the semiconductor device shown in FIG. 1. [Figure 13] FIG. 13 is an enlarged plan view of a part of the semiconductor device according to the second embodiment of the present invention. [Figure 14] FIG. 14 is an enlarged plan view of a part of the semiconductor device according to the third embodiment of the present invention. [Modes for carrying out the invention]

[0012] Embodiments of the present invention will be described in detail below with reference to the drawings. Please note that the drawings used in the following description may show enlarged versions of key features for clarity, and the dimensional ratios of each component may not necessarily be the same as those in reality. Furthermore, the materials, dimensions, etc., exemplified in the following description are merely examples, and the present invention is not necessarily limited to them. It can be implemented with appropriate modifications without altering its essence.

[0013] Furthermore, in the drawings shown below, an XYZ Cartesian coordinate system is set up, with the X-axis direction being the first direction X within the plane of the semiconductor device, the Y-axis direction being the second direction Y perpendicular to the first direction X within the plane of the semiconductor device, and the Z-axis direction being the third direction Z perpendicular to the plane of the semiconductor device.

[0014] (First embodiment) (Semiconductor device) First, as an embodiment of the present invention, the configuration of a stretchable semiconductor device 1A, as shown in Figures 1 to 5, will be described.

[0015] Figure 1 is a plan view showing the configuration of semiconductor device 1A. Figure 2 is an enlarged cross-sectional view of the main part of semiconductor device 1A shown by line segment AA in Figure 1. Figure 3 is an enlarged cross-sectional view of the main part of semiconductor device 1A shown by line segment BB in Figure 1. Figure 4 is an enlarged plan view of a part of semiconductor device 1A. Figure 5 is an enlarged cross-sectional view of a part of semiconductor device 1A shown by line segment CC in Figure 4.

[0016] As shown in Figures 1 to 3, the semiconductor device 1A of this embodiment comprises a stretchable resin substrate 2, a plurality of non-stretchable resin substrates 3 arranged side by side within the plane of the stretchable resin substrate 2, a plurality of semiconductor elements 4 arranged on each of the non-stretchable resin substrates 3, and a plurality of stretchable first wiring layers 5 and second wiring layers 6 arranged on the plane of the stretchable resin substrate 2.

[0017] In the semiconductor device 1A of this embodiment, as an example of a semiconductor element 4, a configuration is shown in which light-emitting diode (LED) elements (hereinafter referred to as "LED element 4" as needed) are arranged in a matrix in a first direction X and a second direction Y that intersect each other (orthogonal in this embodiment) within the plane of the stretchable resin substrate 2.

[0018] The stretchable resin substrate 2 is a film substrate containing an acrylic adhesive composition having adhesive properties, and among these, it is preferable to use an acrylic resin that has excellent transparency, weather resistance, and heat resistance, as well as excellent conformability to uneven surfaces, curved surface adhesion, and holding power.

[0019] For the stretchable resin substrate 2, for example, an acrylic polymer containing 50% by mass or more of monomers having acryloyl groups and methacryloyl groups can be used as an acrylic adhesive composition having adhesive properties. The stretchable resin substrate 2 may also contain, for example, a rosin-based tackifying resin, a terpene-based tackifying resin, or an epoxy-based tackifying resin as the tackifying resin. Furthermore, the resin material constituting the film substrate of the stretchable resin substrate 2 is a resin with a tensile elongation of 100% or more, and can be an acrylic resin, a silicone resin, a styrene-butadiene resin, or the like. The thickness of the stretchable resin substrate 2 is preferably 0.005 to 1.5 mm, and more preferably 0.05 to 1 mm.

[0020] The adhesive strength of the stretchable resin substrate 2 is preferably 5N / 20mm or more, and more preferably 7N / 20mm or more, as measured by the 180° peel-off adhesive strength according to "JIS Z 0237". The high adhesive strength of the stretchable resin substrate 2 is a necessary element for suppressing delamination with the non-stretchable resin substrate 3 and for integrating them, and there is no particular upper limit on the adhesive strength.

[0021] To extend the lifespan and improve durability, the stretchable resin substrate 2 preferably has the ability to return to its original shape after being stretched. Specifically, it is preferable that the recovery rate after being stretched to 100% is 70% or more, and more preferably 85% or more. A low recovery rate makes it difficult to obtain sufficient durability. It is known that the recovery rate can be adjusted by changing the degree of crosslinking and the average molecular weight of the acrylic polymer, and this method can be used to adjust the substrate.

[0022] Multiple non-stretchable resin substrates 3 are flexible resin (plastic) film substrates, arranged in a matrix in a first direction X and a second direction Y that intersect (orthogonal in this embodiment) with each other within the plane of the stretchable resin substrate 2. Each non-stretchable resin substrate 3 can be attached to one side (surface) of the stretchable resin substrate 2 by the adhesive force of the stretchable resin substrate 2 described above.

[0023] For example, the non-stretchable resin substrate 3 can be made of polyimide (PI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polycarbonate (PC), nanocellulose, etc. Among these, it is preferable to use PI, which has excellent heat resistance and chemical resistance to the heat firing and chemical treatment required when forming semiconductor devices, etc. Furthermore, the thickness of the non-stretchable resin substrate 3 is preferably 0.1 to 100 μm, and more preferably 1 to 10 μm.

[0024] Furthermore, it is preferable that the non-stretchable resin substrate 3 is attached to the stretchable resin substrate 2 via an adhesion layer 7. The adhesion layer 7 is a layer for improving the adhesion between the stretchable resin substrate 2, which is the stretchable portion, and the non-stretchable resin substrate 3, which is the non-stretchable portion, and is formed on the surface of the non-stretchable resin substrate 3 that faces the stretchable resin substrate 2.

[0025] The adhesion layer 7 can be an inorganic oxide film such as a silicon oxide (SiO2) film or a silicon nitride (SiNx) film, or a laminate of these. The thickness of the adhesion layer 7 is preferably 5 to 200 nm, and more preferably 10 to 20 nm.

[0026] The LED element 4 is electrically connected to a first upper electrode layer 8 and a second upper electrode layer 9, which are arranged on one side (the top surface) of the non-stretchable resin substrate 3. The first upper electrode layer 8 and the second upper electrode layer 9 can be made of metals such as titanium (Ti), chromium (Cr), aluminum (Al), molybdenum (Mo), gold (Au), silver (Ag), copper (Cu), or alloys thereof, or conductive films made by laminating two or more of these metals.

[0027] The first upper electrode layer 8 and the second upper electrode layer 9 are arranged to intersect each other three-dimensionally, while extending in a first direction X and a second direction Y that intersect each other (orthogonal in this embodiment) on the surface of the non-stretchable resin substrate 3.

[0028] Therefore, an insulating layer 10 is provided at the position where the first upper electrode layer 8 and the second upper electrode layer 9 intersect, electrically insulating the two layers. For example, silicon nitride (SiNx) film or silicon oxide (SiO2) can be used for the insulating layer 10.

[0029] One end of the LED element 4 is electrically connected to the first upper electrode layer 8 via an electrode portion 8a that protrudes in the width direction from the first upper electrode layer 8. The other end of the LED element 4 is electrically connected to the second upper electrode layer 9.

[0030] In this embodiment, the semiconductor device 1A may be configured such that a protective layer (not shown) covering at least a portion of the LED element 4 is provided on the non-stretchable resin substrate 3. The protective layer has the effect of suppressing distortion of the LED element 4 formed on the non-stretchable resin substrate 3 and stabilizing the characteristics of the LED element 4.

[0031] For the protective layer, organic films such as epoxy resins, olefin resins, acrylic resins, and polyimide resins can be used. Among these, it is preferable to use a photoreactive epoxy resin that can be made into a film thicker than 1 μm and that can be patterned by light. Specifically, negative-type photoresist materials such as SU-8 can be used. Furthermore, the thickness of the protective layer is preferably 0.1 to 5 μm, and more preferably 1 to 2 μm.

[0032] The first wiring layer 5 and the second wiring layer 6 are formed from a fluid metal material L, for example, a liquid metal in which metal particles are dispersed.

[0033] Liquid metals that can be used include, for example, eutectic alloys containing gallium (Ga) and indium (In), or eutectic alloys containing Ga, In, and tin (Sn). Furthermore, by using Ga as the main component and adjusting the amount of In and Sn added, it is possible to change the melting point.

[0034] Examples of metal particles that can be used include nickel (Ni), Au, Ag, Cu, and Si. Because the interatomic forces of the aforementioned liquid metals are very strong, their surface energy is high and their wettability is very poor. Therefore, it is possible to improve the wettability by adding the aforementioned metal particles.

[0035] For example, by mixing 1 to 20% by mass of Ni particles with an average particle size of 1 to 50 μm with a liquid metal containing gallium (Ga) and indium (In), a paste is formed, enabling the formation of a first wiring layer 5 and a second wiring layer 6 by printing.

[0036] Multiple first wiring layers 5 are provided on the surface of the stretchable resin substrate 2, extending in the first direction X, so as to electrically connect adjacent non-stretchable resin substrates 3 in the first direction X.

[0037] Furthermore, the ends of the first wiring layer 5 are extended and positioned on adjacent non-stretchable resin substrates 3 in the first direction X, and are electrically connected to the ends of the first upper electrode layer 8. As a result, the first wiring layer 5 is provided so as to be expandable and contractible between adjacent non-stretchable resin substrates 3 in the first direction X.

[0038] Multiple second wiring layers 6 are provided on the surface of the stretchable resin substrate 2, extending in the second direction Y, so as to electrically connect adjacent non-stretchable resin substrates 3 in the second direction Y.

[0039] Furthermore, the end of the second wiring layer 6 extends onto adjacent non-stretchable resin substrates 3 in the second direction Y and is electrically connected to the end of the second upper electrode layer 9. As a result, the second wiring layer 6 is provided so as to be expandable and contractible between adjacent non-stretchable resin substrates 3 in the second direction Y.

[0040] Incidentally, the semiconductor device 1A of this embodiment includes non-stretchable restricting portions 11a and 11b arranged on the surface of the stretchable resin substrate 2, as shown in Figures 4 and 5.

[0041] The restricting portions 11a and 11b are made of a film substrate made of a resin (plastic) having the same flexibility as the non-stretchable resin substrate 3, and are formed by the same process as the non-stretchable resin substrate 3, which will be described later. Therefore, the restricting portions 11a and 11b are attached to the stretchable resin substrate 2 via an adhesion layer 7.

[0042] The restricting sections 11a and 11b are located between adjacent non-stretchable resin substrates 3 and are arranged in a row in the first direction X and the second direction Y, where the first wiring layer 5 and the second wiring layer 6 extend.

[0043] In this embodiment, a plurality of restricting portions 11a extending in the first direction X are arranged parallel to each other at predetermined intervals in the first direction X between adjacent non-stretchable resin substrates 3 in the first direction X, with each portion facing the other, located on one side and the other side of the first wiring layer 5. Furthermore, the plurality of restricting portions 11a are positioned along the first wiring layer 5, adjacent to or in contact with the first wiring layer 5.

[0044] Similarly, between adjacent non-stretchable resin substrates 3 in the second direction Y, a plurality of restricting portions 11b extending in the second direction Y are positioned on one side and the other side of the second wiring layer 6, facing each other, and arranged parallel to each other at predetermined intervals in the second direction Y. Furthermore, the plurality of restricting portions 11b are positioned along the second wiring layer 6, adjacent to or in contact with the second wiring layer 6.

[0045] Furthermore, of the multiple restricting portions 11a arranged in the first direction X, the restricting portions 11a at both ends adjacent to the non-stretchable resin substrate 3 are provided in a continuous manner with the adjacent non-stretchable resin substrate 3. That is, a pair of restricting portions 11a protrude from the side ends of the non-stretchable resin substrate 3 in the first direction X.

[0046] Similarly, among the multiple restricting portions 11b aligned in the second direction Y, the restricting portions 11b at both ends adjacent to the non-stretchable resin substrate 3 are provided in a continuous manner with the adjacent non-stretchable resin substrate 3. That is, a pair of restricting portions 11b protrude from the side ends of the non-stretchable resin substrate 3 in the second direction Y.

[0047] In the semiconductor device 1A of this embodiment, which has the above configuration, the stretchable resin substrate 2 is stretchable between adjacent non-stretchable resin substrates 3.

[0048] As a result, when the stretchable resin substrate 2 is stretched in the first direction X and the second direction Y, the LED element 4 is provided on the non-stretchable resin substrate 3, which is the non-stretchable portion, thus reducing the effect of the stretching and contracting of the stretchable resin substrate 2 on the LED element 4.

[0049] Furthermore, in the semiconductor device 1A of this embodiment, as shown in Figure 2, a first wiring layer 5 formed of a fluid metal material L is provided so as to be expandable and contractible in the first direction X, following the expansion and contraction of the stretchable resin substrate 2 in the first direction X. This makes it possible to maintain the electrical connection between each first wiring layer 5 and each first upper electrode layer 8 even when the stretchable resin substrate 2 is expanded and contracted in the first direction X.

[0050] On the other hand, in the semiconductor device 1A of this embodiment, as shown in Figure 3, a second wiring layer 6 made of a fluid metal material L is provided so as to be expandable and contractible in the second direction Y, following the expansion and contraction of the stretchable resin substrate 2 in the second direction Y. This makes it possible to maintain the electrical connection between each second wiring layer 6 and each second upper electrode layer 9 even when the stretchable resin substrate 2 is expanded or contracted in the second direction Y.

[0051] Furthermore, in the semiconductor device 1A of this embodiment, as the stretchable resin substrate 2 expands and contracts, some of the fluid metal material L forming the first wiring layer 5 and the second wiring layer 6 may flow along the restricting portions 11a and 11b.

[0052] In the semiconductor device 1A of this embodiment, when a portion of the fluid metal material L forming the first wiring layer 5 flows along the restricting portion 11a, the restricting portion 11a restricts the flow of the fluid metal material L and blocks it.

[0053] This makes it possible to maintain the shape of the first wiring layer 5 extending in the first direction X, and to prevent the first wiring layer 5 from breaking when it is expanded or contracted in the first direction X.

[0054] Similarly, in the semiconductor device 1A of this embodiment, when a portion of the fluid metal material L forming the second wiring layer 6 flows along the restricting portion 11b, the restricting portion 11b restricts the flow of the fluid metal material L and blocks it.

[0055] This makes it possible to maintain the shape of the second wiring layer 6 extending in the second direction Y, and to prevent the second wiring layer 6 from breaking when it is expanded or contracted in the second direction Y.

[0056] Furthermore, in the semiconductor device 1A of this embodiment, a pair of restricting portions 11a are provided that protrude from the side edge in the first direction X of the non-stretchable resin substrate 3 described above. When a portion of the fluid metal material L forming the first wiring layer 5 flows along the edge of the non-stretchable resin substrate 3, the pair of restricting portions 11a block the fluid metal material L.

[0057] This makes it possible to maintain the shape of the first wiring layer 5 at the boundary between the stretchable resin substrate 2 and the non-stretchable resin substrate 3, while mitigating the stress applied to the first wiring layer 5 and preventing disconnection of the first wiring layer 5.

[0058] Similarly, by providing a pair of restricting portions 11b protruding from the side edge of the non-stretchable resin substrate 3 in the second direction Y, the pair of restricting portions 11b block the flow of some of the fluid metal material L that forms the second wiring layer 6 when it flows along the edge of the non-stretchable resin substrate 3.

[0059] This makes it possible to maintain the shape of the second wiring layer 6 at the boundary between the stretchable resin substrate 2 and the non-stretchable resin substrate 3, while mitigating the stress applied to the second wiring layer 6 and preventing disconnection of the second wiring layer 6.

[0060] As described above, the semiconductor device 1A of this embodiment makes it possible to reduce the impact on the LED element 4 due to the expansion and contraction of the stretchable resin substrate 2 and to stabilize the operation of the LED element 4.

[0061] (Method of manufacturing semiconductor devices) Next, the manufacturing method of the semiconductor device 1A will be explained with reference to Figures 6 to 12. Figures 6 to 12 are cross-sectional views illustrating the manufacturing process of semiconductor device 1A in sequence. Furthermore, Figures 6 to 12 show cross-sectional views corresponding to line segment AA shown in Figure 1.

[0062] When manufacturing the semiconductor device 1A described above, first, as shown in Figure 6, a non-stretchable resin substrate 30, which will become a plurality of non-stretchable resin substrates 3, is formed on a first support substrate 21. Specifically, a glass substrate is used for the first support substrate 21, and a coating liquid containing PI, which will become the non-stretchable resin substrate 3 as described above, is applied to this first support substrate 21 by spin coating to form a coating film. After this coating film is dried (fired), a non-stretchable resin substrate 30 made of PI film is formed.

[0063] Next, as shown in Figure 7, multiple non-stretchable resin substrates 3 are formed by removing the area around each portion of the non-stretchable resin base material 30 that will become a non-stretchable resin substrate 3 using dry etching or wet etching with photolithography technology.

[0064] Furthermore, when forming multiple non-stretchable resin substrates 3, the areas around each of the restricting portions 11a and 11b of the non-stretchable resin substrate 30 are removed by dry etching or wet etching using photolithography technology, thereby simultaneously forming multiple restricting portions 11a and 11b.

[0065] Next, as shown in Figure 8, a first upper electrode layer 8 and a second upper electrode layer 9 are formed on each non-stretchable resin substrate 3.

[0066] Next, as shown in Figure 9, the second support substrate 23 is attached to the multiple non-stretchable resin substrates 3 via a removable film tape 22.

[0067] Next, as shown in Figure 10, the first support substrate 21 is peeled off. Specifically, using laser lift-off, laser light is irradiated from the side of the first support substrate 21, and the interface between the multiple non-stretchable resin substrates 3 and the first support substrate 21 is ablated, thereby removing the first support substrate 21 that has been peeled off from the multiple non-stretchable resin substrates 3.

[0068] Next, as shown in Figure 11, the stretchable resin substrate 2 and the restricting portions 11a and 11b are attached to a plurality of non-stretchable resin substrates 3 via an adhesion layer 7.

[0069] Next, as shown in Figure 12, the second support substrate 23 is peeled off and removed from the multiple non-stretchable resin substrates 3 together with the re-peelable film tape 22. Then, the first wiring layer 5 and the second wiring layer 6 are formed on the stretchable resin substrate 2 using the fluid metal material L described above.

[0070] Subsequently, LED elements 4 are mounted on each non-stretchable resin substrate 3 so as to be electrically connected to the first upper electrode layer 8 and the second upper electrode layer 9 of each non-stretchable resin substrate 3. By following the above steps, it is possible to manufacture the semiconductor device 1A shown in Figure 1.

[0071] In the manufacturing method of the semiconductor device 1A of this embodiment, it is possible to reduce the impact on the LED element 4 due to the expansion and contraction of the stretchable resin substrate 2 described above, thereby stabilizing the operation of the LED element 4, and to manufacture the semiconductor device 1A with a high yield.

[0072] (Second embodiment) (Semiconductor device) Next, as a second embodiment of the present invention, a semiconductor device 1B shown in Figure 13 will be described.

[0073] Figure 13 is an enlarged plan view of a part of semiconductor device 1B. In the following description, parts equivalent to those of semiconductor device 1A will not be described, and the same reference numerals will be used in the drawings.

[0074] As shown in Figure 13, the semiconductor device 1B of this embodiment has basically the same configuration as the semiconductor device 1A described above, except for the configuration described below.

[0075] Specifically, in this semiconductor device 1B, a plurality of restricting portions 11a extending in the first direction X are arranged alternately in the first direction X between adjacent non-stretchable resin substrates 3 in the first direction X, with their positions staggered and shifted on one side and the other side of the first wiring layer 5. Furthermore, the restricting portions 11a on one side of the first wiring layer 5 and the restricting portions 11a on the other side may or may not face each other across the first wiring layer 5.

[0076] Similarly, between adjacent non-stretchable resin substrates 3 in the second direction Y, a plurality of restricting portions 11b extending in the second direction Y are arranged alternately in the second direction Y, with their positions staggered and positioned on one side and the other side of the second wiring layer 6. Furthermore, the restricting portions 11b on one side of the second wiring layer 6 and the restricting portions 11b on the other side may or may not face each other across the second wiring layer 6.

[0077] In the semiconductor device 1B of this embodiment having the above-described configuration, as the stretchable resin substrate 2 expands and contracts, some of the fluid metal material L forming the first wiring layer 5 and the second wiring layer 6 may flow along the restricting portions 11a and 11b.

[0078] In the semiconductor device 1B of this embodiment, when a portion of the fluid metal material L forming the first wiring layer 5 flows along the restricting portion 11a, the restricting portion 11a restricts the flow of the fluid metal material L and blocks it.

[0079] This makes it possible to maintain the shape of the first wiring layer 5 extending in the first direction X, and to prevent the first wiring layer 5 from breaking when it is expanded or contracted in the first direction X.

[0080] Similarly, in the semiconductor device 1B of this embodiment, when a portion of the fluid metal material L forming the second wiring layer 6 flows along the restricting portion 11b, the restricting portion 11b restricts the flow of the fluid metal material L and blocks it.

[0081] This makes it possible to maintain the shape of the second wiring layer 6 extending in the second direction Y, and to prevent the second wiring layer 6 from breaking when it is expanded or contracted in the second direction Y.

[0082] As described above, the semiconductor device 1B of this embodiment makes it possible to reduce the impact on the LED element 4 due to the expansion and contraction of the stretchable resin substrate 2 and to stabilize the operation of the LED element 4.

[0083] (Third embodiment) (Semiconductor device) Next, as a third embodiment of the present invention, a semiconductor device 1C shown in Figure 14 will be described.

[0084] Figure 14 is an enlarged plan view of a part of semiconductor device 1C. In the following description, parts equivalent to those of semiconductor device 1A will not be described, and the same reference numerals will be used in the drawings.

[0085] As shown in Figure 14, the semiconductor device 1C of this embodiment has basically the same configuration as the semiconductor device 1A described above, except for the configuration described below.

[0086] Specifically, in this semiconductor device 1C, a plurality of restricting portions 11a extending in the first direction X are arranged linearly in the first direction X between adjacent non-stretchable resin substrates 3 in the first direction X, with each portion located on one side of the first wiring layer 5.

[0087] Similarly, the structure has a configuration in which a plurality of restricting portions 11b extending in the second direction Y are arranged linearly in the second direction Y between adjacent non-stretchable resin substrates 3 in the second direction Y, with each portion located on one side of the second wiring layer 6.

[0088] In the semiconductor device 1C of this embodiment having the above-described configuration, as the stretchable resin substrate 2 expands and contracts, some of the fluid metal material L forming the first wiring layer 5 and the second wiring layer 6 may flow along the restricting portions 11a and 11b.

[0089] In the semiconductor device 1C of this embodiment, when a portion of the fluid metal material L forming the first wiring layer 5 flows along the restricting portion 11a, the restricting portion 11a restricts the flow of the fluid metal material L and blocks it.

[0090] This makes it possible to maintain the shape of the first wiring layer 5 extending in the first direction X, and to prevent the first wiring layer 5 from breaking when it is expanded or contracted in the first direction X.

[0091] Similarly, in the semiconductor device 1C of this embodiment, when a portion of the fluid metal material L forming the second wiring layer 6 flows along the restricting portion 11b, the restricting portion 11b restricts the flow of the fluid metal material L and blocks it.

[0092] This makes it possible to maintain the shape of the second wiring layer 6 extending in the second direction Y, and to prevent the second wiring layer 6 from breaking when it is expanded or contracted in the second direction Y.

[0093] As described above, the semiconductor device 1C of this embodiment makes it possible to reduce the impact on the LED element 4 due to the expansion and contraction of the stretchable resin substrate 2 and to stabilize the operation of the LED element 4.

[0094] It should be noted that the present invention is not necessarily limited to the embodiments described above, and various modifications can be made without departing from the spirit of the invention.

[0095] For example, the restricting sections 11a and 11b are not limited to the shapes, number, dimensions, arrangement (spacing), etc., described above, and can be modified as appropriate to match the shapes of the first wiring layer 5 and the second wiring layer 6.

[0096] The stretchable resin substrate 2 is not necessarily limited to those having adhesive properties as described above, and may be non-adhesive. In this case, the non-stretchable resin substrate 3 can be attached to the stretchable resin substrate 2 via the adhesive layer 7.

[0097] Furthermore, although the semiconductor devices 1A, 1B, and 1C of this embodiment are configured to include LED elements 4 as semiconductor elements, by forming TFTs or the like on each non-stretchable resin substrate 3, and having each non-stretchable resin substrate 3 constitute a single pixel device, it is possible to realize a stretchable display that can be stretched and compressed, as well as a display that can be deformed into three-dimensional shapes such as spheres and free-form surfaces. When configuring a pixel device, it is also possible to use light-emitting elements such as organic electroluminescent (EL) elements instead of the LED elements 4 described above.

[0098] Furthermore, the semiconductor device to which the present invention is applied is not necessarily limited to the configuration equipped with the light-emitting element described above, but can also be an electronic device equipped with semiconductor elements such as a light-receiving element, a strain sensor, or a pressure sensor. [Explanation of symbols]

[0099] 1A, 1B, 1C… Semiconductor device 2… Stretchable resin substrate 3… Non-stretchable resin substrate 4… Semiconductor element (LED element) 5… First wiring layer 6… Second wiring layer 7… Adhesion layer 8… First upper electrode layer 9… Second upper electrode layer 10… Insulating layer 11a, 11b… Restricting area L… Flowable metal material

Claims

1. A stretchable resin substrate that can be stretched and contracted, A plurality of non-stretchable resin substrates arranged side by side on the surface of the stretchable resin substrate, A plurality of semiconductor elements arranged on each surface of the plurality of non-stretchable resin substrates, On the side of the stretchable resin substrate facing the non-stretchable resin substrate, there are a plurality of wiring layers provided so as to be stretchable between adjacent non-stretchable resin substrates, The stretchable resin substrate comprises a non-stretchable restricting portion provided on the side facing the wiring layer, The aforementioned wiring layer is formed from a fluid metal material in which metal particles are dispersed in a liquid metal. The restricting portion is characterized by being positioned along the wiring layer, and the semiconductor device is expandable.

2. The stretchable semiconductor device according to claim 1, characterized in that the restricting portion is arranged on at least one or both sides of the wiring layer.

3. The stretchable semiconductor device according to claim 1, characterized in that the restricting portion is arranged adjacent to or in contact with the wiring layer.

4. The stretchable semiconductor device according to claim 1, characterized in that the restricting portions are located between adjacent non-stretchable resin substrates and are arranged in a row in the direction in which the wiring layer extends.

5. The expandable semiconductor device according to claim 4, characterized in that, among the plurality of restricting portions arranged in the direction in which the wiring layer extends, the restricting portion on one side of the wiring layer and the restricting portion on the other side are arranged facing each other.

6. The expandable semiconductor device according to claim 4, characterized in that, among the plurality of restricting portions arranged in the direction in which the wiring layer extends, the restricting portion on one side of the wiring layer and the restricting portion on the other side are arranged in an alternating positional shift.

7. The stretchable semiconductor device according to claim 4, characterized in that, among the plurality of restricting portions arranged in the direction in which the wiring layer extends, the restricting portion adjacent to the non-stretchable resin substrate is arranged continuously with the adjacent non-stretchable resin substrate.

8. The non-stretchable resin substrate is disposed on the aforementioned non-stretchable resin substrate and comprises an electrode layer electrically connected to the semiconductor element, The stretchable semiconductor device according to claim 1, characterized in that one end of the wiring layer is electrically connected to the electrode layer while extended and positioned on the non-stretchable resin substrate.

9. The aforementioned stretchable resin substrate has adhesive properties, The stretchable semiconductor device according to claim 1, characterized in that the non-stretchable resin substrate is attached to the stretchable resin substrate by the adhesive force of the stretchable resin substrate.

10. The stretchable resin substrate is provided with an adhesive layer on the side facing the non-stretchable resin substrate, The stretchable semiconductor device according to claim 1, characterized in that the non-stretchable resin substrate is attached to the stretchable resin substrate via the adhesion layer.

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