Light-emitting devices, light-emitting apparatus, and electronic equipment

Abstract

To provide a novel light-emitting device that offers superior convenience, usefulness, or reliability. [Solution] A light-emitting device having a first electrode, a second electrode, and a first layer, The first layer includes a luminescent material, a first material, and a second material. The first material is The molecule comprises a first anthracene skeleton and a first substituent, wherein the first substituent is a first anthracene It is bonded to the skeleton, and the first substituent contains a heteroaromatic ring. The second material is a second anthracite. The molecule comprises a cene skeleton, a second substituent, and a third substituent, wherein the second substituent is a second anthracene. Bonded to the skeleton, the second substituent contains an aromatic ring whose ring structure is composed of carbon, and the third substituent is The second anthracene skeleton is bonded to the third substituent, which contains an aromatic ring whose ring structure is composed of carbon atoms. Furthermore, the third substituent has a structure different from that of the second substituent.

Description

[[Technical Field]]

[0001] One embodiment of the present invention relates to a light-emitting device, a light-emitting apparatus, an electronic device, or a lighting apparatus.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. The invention disclosed in this specification and the like The technical field of one embodiment relates to an article, a method, or a manufacturing method. Alternatively, the present invention one embodiment relates to a process, a machine, a manufacture, or a composition (a composition of matter). Therefore, as a more specific technical field of one embodiment of the present invention disclosed in this specification, a semiconductor device, a display device, a light-emitting apparatus, a power storage device, a memory device, driving methods thereof, or manufacturing methods thereof can be given as an example. [[Background Art]]

[0003] Practical application of light-emitting devices (organic EL elements) utilizing electroluminescence (EL) using organic compounds has been progressing. These light-emitting devices have a basic structure in which an organic compound layer (EL layer) containing a light-emitting material is sandwiched between a pair of electrodes . A voltage is applied to this element to inject carriers, and by utilizing the recombination energy of the carriers, light emission from the light-emitting material can be obtained.

[0004] Since such a light-emitting device is of a self-luminous type, it has higher visibility than a liquid crystal display and is suitable as a pixel of a display. In addition, a display using such a light-emitting device has great advantages in that it does not require a backlight and can be manufactured to be thin and lightweight. Furthermore, one of its characteristics is that it has a very fast response speed.

[0005] ​ Furthermore, these light-emitting devices allow for the continuous formation of a light-emitting layer in two dimensions. This allows for the emission of light in a planar manner. This is a point light source, such as an incandescent light bulb or an LED. Alternatively, it is a characteristic that is difficult to obtain with linear light sources such as fluorescent lamps, and therefore can be applied to lighting and other applications. It also has high value as a source of nutrients.

[0006] In this way, displays or lighting devices using light-emitting devices are suitable for various electronic devices. While suitable for general use, research and development are underway to find light-emitting devices with better efficiency and lifespan. It is being done.

[0007] The characteristics of light-emitting devices have improved remarkably, but efficiency, durability, and all other aspects have not been fully realized. It must be said that it is still insufficient to meet the high demands regarding characteristics. In particular, EL specific To solve problems such as seizing, which are still cited as an issue, efficiency due to degradation... The smaller the decrease, the better.

[0008] Regarding degradation, it is largely determined by the luminescent central material and the surrounding materials, so good The development of host materials with such properties is actively underway. [Prior art documents] [Patent Documents]

[0009] [Patent Document 1] Japanese Patent Publication No. 2004-59535 [Overview of the project] [Problems that the invention aims to solve]

[0010] One aspect of the present invention provides a novel light-emitting device that is superior in convenience, usefulness, or reliability. One of the challenges is to develop a novel light-emitting device that is superior in convenience, usefulness, or reliability. One of the challenges is to provide a new electric device that is superior in convenience, usefulness, or reliability. One of the objectives is to provide sub-devices, or devices that are superior in terms of convenience, usefulness, or reliability. One of our objectives is to provide novel lighting devices.

[0011] Furthermore, the description of these problems does not preclude the existence of other problems. The approach does not need to solve all of these problems. This will become clear from the description in the specification, drawings, claims, etc., and the specification, drawings It is possible to extract other issues from the descriptions in the surfaces, claims, etc. [Means for solving the problem]

[0012] (1) One aspect of the present invention is a light-emitting device having a first electrode, a second electrode, and a first layer. It is a chair.

[0013] The first layer comprises a region sandwiched between the first electrode and the second electrode, and the first layer is luminescent The material includes material D, the first material H1, and the second material H2.

[0014] The first material H1 comprises a first anthracene skeleton and a first substituent R11, and the first substitution The group R11 is bonded to the first anthracene skeleton, and the first substituent R11 contains a heteroaromatic ring.

[0015] The second material H2 consists of a second anthracene skeleton, a second substituent R21, and a third substituent R2 It comprises 2. The second substituent R21 is bonded to the second anthracene skeleton, and the second substituent R2 Compound 1 contains an aromatic ring whose ring structure is composed of carbon atoms. Furthermore, the third substituent R22 is the second ant. Bonded to the helical skeleton, the third substituent R22 contains an aromatic ring whose ring structure is composed of carbon, Substituent R22 of molecule 3 has a different structure from the second substituent R21.

[0016] (2) In another aspect of the present invention, the first substituent R11 comprises a carbazole skeleton, as described above. It is a light-emitting device.

[0017] This can improve reliability, or enhance hole transport. Alternatively, the rise in drive voltage can be suppressed. As a result, convenience, usefulness or reliability This enables the provision of novel light-emitting devices with superior reliability.

[0018] (3) In another aspect of the present invention, the first substituent R11 is dibenzo[c,g]carbazole The above-mentioned light-emitting device includes a framework and can be represented by the following general formula (R11).

[0019] [ka]

[0020] However, in the above general formula (R11), R 111 ~R 122 Each of them independently produces hydrogen , alkyl groups having 1 to 6 carbon atoms, cyclic hydrocarbon groups having 3 to 6 carbon atoms, A Lucoxy group, cyano group, halogen, C1 to C6 haloalkyl group and substituted or unsubstituted groups. This represents any of the substituted aromatic hydrocarbon groups having 6 to 60 carbon atoms.

[0021] This results in HOMO (Highest Occupied Molecular Orbital) The bital level can be made shallower, or holes can be made easier to enter. Alternatively, hole transportability can be improved. Alternatively, the increase in drive voltage can be suppressed. Yes, it is possible. Or, heat resistance can be increased. As a result, convenience, usefulness, or reliability This allows us to provide novel light-emitting devices with superior performance.

[0022] (4) In addition, one aspect of the present invention relates to a configuration in which at least one of the second substituent R21 or the third substituent R22 is used. Either of these is the above-mentioned light-emitting device, which contains a naphthalene ring.

[0023] (5) In addition, in one aspect of the present invention, both the second substituent R21 and the third substituent R23 The above-mentioned light-emitting device includes a naphthalene ring.

[0024] (6) In addition, in one aspect of the present invention, the first material H1 can be represented by the following general formula (H11) The above-mentioned light-emitting device can do this.

[0025] [ka]

[0026] However, in the above general formula (H11), R 101 ~R 129 Each of them independently produces hydrogen , alkyl groups having 1 to 6 carbon atoms, cyclic hydrocarbon groups having 3 to 6 carbon atoms, A Lucoxy group, cyano group, halogen, C1 to C6 haloalkyl group and substituted or unsubstituted groups. This represents any of the substituted aromatic hydrocarbon groups having 6 to 60 carbon atoms.

[0027] (7) In addition, one aspect of the present invention is that the first material H1 is represented by the following structural formula (H12), 7-[ 4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carb The above-mentioned light-emitting device is a zole.

[0028] Chemical Formula

[0029] Accordingly, particularly favorable characteristics can be achieved. As a result, a novel light-emitting device excellent in convenience, usefulness, or reliability can be provided.

[0030] (8) According to one aspect of the present invention, in the above-described light-emitting device, the second material H2 has lower electron-transporting property than the first material H1.

[0031] Accordingly, reliability can be improved. Alternatively, reliability can be improved while an increase in driving voltage is suppressed. As a result, a novel light-emitting device excellent in convenience, usefulness, or reliability can be provided.

[0032] (9) According to one aspect of the present invention, in the above-described light-emitting device, the second material H2 can be represented by the following general formula (H21).

[0033] Chemical Formula

[0034] However, in the above general formula (H21), R 202 is hydrogen or a substituent including an aromatic ring whose ring structure is composed of carbon, R is a substituent including an aromatic ring whose ring structure is composed of carbon, at least one of R 210 and R includes a naphthalene ring, and R 202 to R 210 , excluding R 202 and R 210 , that is R 201 to R 218 are each independently hydrogen or alkyl having 1 to 6 carbon atoms. Alkyl groups, cyclic hydrocarbon groups having 3 to 6 carbon atoms, alkoxy groups having 1 to 6 carbon atoms, shea ¹ groups, halogens, C1 to C6 haloalkyl groups, and substituted or unsubstituted C6 groups. Represents any of the 60 aromatic hydrocarbon groups.

[0035] (10) In addition, in one aspect of the present invention, the second material H2 is represented by the following structural formula (H22), 9- (1-Naphthyl)-10-[4-(2-Naphthyl)phenyl]anthracene and the following composition From 2,9-di(1-naphthyl)-10-phenylanthracene, as shown in formula (H23) The above-mentioned light-emitting device is the one that is chosen.

[0036] [ka]

[0037] (11) In addition, in one aspect of the present invention, the luminescent material D emits blue fluorescence, the above-mentioned luminescent D It's a vice.

[0038] (12) In another aspect of the present invention, the luminescent material D is an aromatic diamine or a heteroaromatic diamine. The above-mentioned light-emitting device is an amine.

[0039] (13) Another aspect of the present invention is an emission device having the above-mentioned light-emitting device and a transistor. It is a light device.

[0040] This can improve reliability. Alternatively, while suppressing the rise in drive voltage, Reliability can be improved. As a result, novel solutions with superior convenience, usefulness, or reliability can be developed. We can provide a light-emitting device.

[0041] (14) Another aspect of the present invention is a light-emitting device, a sensor, an operating button, a speaker, Alternatively, it is an electronic device having a microphone.

[0042] This can improve reliability. Alternatively, while suppressing the rise in drive voltage, Reliability can be improved. As a result, novel solutions with superior convenience, usefulness, or reliability can be developed. We can provide electronic devices.

[0043] In the drawings attached to this specification, the components are classified by function and are shown as independent blocks. Although a block diagram is shown, it is difficult to completely separate the actual components by function. Furthermore, a single component may be involved in multiple functions.

[0044] In this specification, the source and drain of a transistor are defined as the polarity of the transistor and each The name changes depending on the potential applied to the terminals. Generally, n-channel In a transistor, the terminal to which a low potential is applied is called the source, and the terminal to which a high potential is applied is called the source. The terminal that is exposed to low potential is called the drain. Also, in p-channel transistors, when a low potential is applied... The terminal to which the current is applied is called the drain, and the terminal to which a high potential is applied is called the source. So, for convenience, let's assume that the source and drain are fixed, and the transistor's connections Although the relationship is sometimes explained, in reality, the source and drain are called according to the potential relationship described above. The way they move is reversed.

[0045] In this specification, the source of a transistor is a part of the semiconductor film that functions as the active layer. This refers to the source region, or the source electrode connected to the semiconductor film. Similarly, The drain of a DISTA is a drain region which is part of the semiconductor film, or a part of the semiconductor film. It refers to the connected drain electrode. The gate, on the other hand, refers to the gate electrode.

[0046] In this specification, the state in which transistors are connected in series means, for example, the first transistor Only one of the sources or drains of the second transistor is connected to the source or drain of the second transistor. This means that only one side of the transistor is connected. Also, when transistors are connected in parallel... The state in which one of the sources or drains of the first transistor is connected to the second transistor Connected to either the source or drain of the first transistor, and the source or drain of the first transistor This means that the other end of one transistor is connected to the other end of the source or drain of the second transistor. do.

[0047] In this specification, "connection" means an electrical connection, where current, voltage, or potential is supplied. This corresponds to a state where power can be supplied or transmitted. Therefore, a connected state means that power is directly connected. This does not necessarily refer to a state in which current, voltage, or potential is available or available for transmission. To enable transmission, the circuit elements such as wires, resistors, diodes, and transistors are connected. This category also includes states where devices are indirectly connected.

[0048] In this specification, when components that are independent in the circuit diagram are connected to each other, However, in reality, for example, when part of the wiring functions as an electrode, one conductive film can be multiple In some cases, the components may also possess the functions of multiple components. In this specification, connection means such as This category also includes cases where a single conductive film possesses the functions of multiple components.

[0049] Furthermore, in this specification, if either the first electrode or the second electrode of the transistor is the source One electrode points to the drain electrode. [Effects of the Invention]

[0050] According to one aspect of the present invention, a novel light-emitting device with superior convenience, usefulness, or reliability is provided. It can be provided. Or, a novel light-emitting device with superior convenience, usefulness, or reliability can be provided. It can be provided. Or, it can provide novel electronic devices that are superior in convenience, usefulness or reliability. It can be provided. Or, a novel lighting device with superior convenience, usefulness, or reliability can be provided. It can be provided.

[0051] Furthermore, the description of these effects does not preclude the existence of other effects. The embodiment does not necessarily have to have all of these effects. Furthermore, other effects are... This will become clear from the description in the specification, drawings, claims, etc., and the specification, drawings Furthermore, it is possible to extract other effects from the descriptions in the claims and other documents. [Brief explanation of the drawing]

[0052] [Figure 1] Figure 1 is a diagram illustrating the configuration of a light-emitting device according to an embodiment. [Figure 2] Figures 2(A) and 2(B) illustrate the configuration of a light-emitting device according to an embodiment. [Figure 3] Figure 3 is a diagram illustrating the configuration of a light-emitting panel according to an embodiment. [Figure 4] Figures 4(A) and (B) are conceptual diagrams of an active matrix type light-emitting device. [Figure 5] Figures 5(A) and (B) are conceptual diagrams of an active matrix type light-emitting device. [Figure 6] Figure 6 is a conceptual diagram of an active matrix type light-emitting device. [Figure 7]Figures 7(A) and (B) are conceptual diagrams of a passive matrix type light-emitting device. [Figure 8] Figures 8(A) and 8(B) are diagrams representing lighting devices. [Figure 9] Figures 9(A) through (D) are diagrams representing electronic devices. [Figure 10] Figures 10(A) through (C) are diagrams representing electronic devices. [Figure 11] Figure 11 is a diagram representing a lighting device. [Figure 12] Figure 12 is a diagram representing a lighting device. [Figure 13] Figure 13 is a diagram representing an in-vehicle display device and lighting system. [Figure 14] Figures 14(A) through (C) are diagrams representing electronic devices. [Figure 15] Figure 15 is a diagram illustrating the configuration of a light-emitting device according to an embodiment. [Figure 16] Figure 16 illustrates the current density-luminance characteristics of a light-emitting device according to an embodiment. [Figure 17] Figure 17 illustrates the brightness-current efficiency characteristics of the light-emitting device according to the embodiment. [Figure 18] Figure 18 illustrates the voltage-luminance characteristics of a light-emitting device according to an embodiment. [Figure 19] Figure 19 illustrates the voltage-current characteristics of a light-emitting device according to an embodiment. [Figure 20] Figure 20 illustrates the luminance-external quantum efficiency characteristics of the light-emitting device according to the embodiment. [Figure 21] Figure 21 illustrates the emission spectrum of a light-emitting device according to an embodiment. [Figure 22] Figure 22 illustrates the current density-luminance characteristics of the light-emitting device according to the embodiment. [Figure 23] Figure 23 illustrates the brightness-current efficiency characteristics of the light-emitting device according to the embodiment. [Figure 24] Figure 24 illustrates the voltage-luminance characteristics of the light-emitting device according to the embodiment. [Figure 25]Figure 25 illustrates the voltage-current characteristics of a light-emitting device according to an embodiment. [Figure 26] Figure 26 illustrates the luminance-external quantum efficiency characteristics of the light-emitting device according to the embodiment. [Figure 27] Figure 27 illustrates the emission spectrum of a light-emitting device according to an embodiment. [Figure 28] Figure 28 illustrates the normalized brightness-time variation characteristics of the light-emitting device according to the embodiment. [Figure 29] Figure 29 illustrates the normalized brightness-time variation characteristics of the light-emitting device according to the embodiment. [Figure 30] Figure 30 illustrates the current density-luminance characteristics of the light-emitting device according to the embodiment. [Figure 31] Figure 31 illustrates the brightness-current efficiency characteristics of the light-emitting device according to the embodiment. [Figure 32] Figure 32 illustrates the voltage-luminance characteristics of the light-emitting device according to the embodiment. [Figure 33] Figure 33 illustrates the voltage-current characteristics of a light-emitting device according to an embodiment. [Figure 34] Figure 34 illustrates the luminance-external quantum efficiency characteristics of the light-emitting device according to the embodiment. [Figure 35] Figure 35 illustrates the emission spectrum of a light-emitting device according to an embodiment. [Figure 36] Figure 36 illustrates the normalized brightness-time variation characteristics of the light-emitting device according to the embodiment. [Figure 37] Figure 37 illustrates the light distribution characteristics of the light-emitting device according to the embodiment. [Figure 38] Figure 38 illustrates the light distribution characteristics of a light-emitting device according to an embodiment. [Figure 39] Figure 39 illustrates the change in light emission intensity after pulse driving of the light-emitting device according to the embodiment. [Figure 40] Figure 40 illustrates the change in light emission intensity after pulse driving of the light-emitting device according to the embodiment. [Figure 41]Figure 41 illustrates the corrected external quantum efficiency and carrier balance factor γ of the light-emitting device according to the embodiment. [Modes for carrying out the invention]

[0053] A light-emitting device according to one aspect of the present invention comprises a first electrode, a second electrode, and a first layer. The first layer comprises a region sandwiched between the first electrode and the second electrode, and the first layer is The material comprises a photochromic material, a first material, and a second material. The first material is a first anthracene bone. The second material comprises a second anthracene skeleton and a substituent. It is equipped with.

[0054] This can improve reliability. Alternatively, while suppressing the rise in drive voltage, Reliability can be improved. As a result, novel solutions with superior convenience, usefulness, or reliability can be developed. We can provide light-emitting devices.

[0055] Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. Without departing from the spirit and scope of the present invention, its form and details may be modified in various ways. It will be easily understood by those skilled in the art to obtain this. Therefore, the present invention is as shown in the embodiments below. The description is not to be interpreted as being limited to the stated content. The same reference numeral is used in common across different drawings for parts that are identical or have similar functions. I will omit the explanation of that repetition.

[0056] (Embodiment 1) In this embodiment, the configuration of a light-emitting device according to one aspect of the present invention will be described with reference to Figure 1. explain.

[0057] Figure 1 is a diagram illustrating the configuration of a light-emitting device according to one embodiment of the present invention.

[0058] <Example 1 of Light-Emitting Device Configuration> The light-emitting device 150 described in this embodiment includes an electrode 101, an electrode 102, and a layer 111 It has the following (see Figure 1). The light-emitting device 150 emits light EL1.

[0059] Layer 111 comprises a region sandwiched between electrodes 101 and 102, and layer 111 is luminescent The material includes material D, the first material H1, and the second material H2.

[0060] 《First material H1》 The first material H1 comprises a first anthracene skeleton and a substituent R11, wherein substituent R11 is It is bonded to the anthracene skeleton, and substituent R11 contains a heteroaromatic ring.

[0061] For example, a compound having a first anthracene skeleton and a carbazole skeleton is used as the first material. It can be used in H1. Specifically, at position 9 or 10 of the first anthracene skeleton. A compound having substituents on a carbazole skeleton can be used as the first material H1. Cut.

[0062] This can improve reliability, or enhance hole transport. Alternatively, the rise in drive voltage can be suppressed. As a result, convenience, usefulness or reliability This enables the provision of novel light-emitting devices with superior reliability.

[0063] Furthermore, for example, substituent R11 includes a dibenzo[c,g]carbazole skeleton, and the following general This can be shown by equation (R11).

[0064] [ka]

[0065] However, in the above general formula (R11), R 111 ~R 122 Each of them independently produces hydrogen , alkyl groups having 1 to 6 carbon atoms, cyclic hydrocarbon groups having 3 to 6 carbon atoms, A Lucoxy group, cyano group, halogen, C1 to C6 haloalkyl group and substituted or unsubstituted groups. This represents any of the substituted aromatic hydrocarbon groups having 6 to 60 carbon atoms.

[0066] This allows the HOMO level to be made shallower, or easier for holes to enter. This can be done. Alternatively, hole transport performance can be improved. Alternatively, the rise in drive voltage can be suppressed. It is possible to do so. Or, heat resistance can be increased. As a result, convenience, usefulness and This can provide a novel light-emitting device with superior reliability.

[0067] Furthermore, for example, if a material that can be represented by the following general formula (H11) is used as the first material H1, It is possible.

[0068] [ka]

[0069] However, in the above general formula (H11), R 101 ~R 129 Each of them independently produces hydrogen , alkyl groups having 1 to 6 carbon atoms, cyclic hydrocarbon groups having 3 to 6 carbon atoms, A Lucoxy group, cyano group, halogen, C1 to C6 haloalkyl group and substituted or unsubstituted groups. This represents any of the substituted aromatic hydrocarbon groups having 6 to 60 carbon atoms.

[0070] For example, the structural formula of 9-[4-(N-carbazolyl)]phenyl-10-phenyl is shown below. Nylanthracene (abbreviation: CzPA), 7-[4-(10-phenyl-9-anthryl) Phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 9- [4-(3-phenyl-9H-carbazole-9-yl)phenyl]-10-phenyl Nthracene (abbreviation: CzPAP), 7-[4-(10-phenyl-9-anthryl)phenyl [nil]benzo[c]-7H-carbazole (abbreviation: cBCzPA), 5-[4-(10- Phenyl-9-anthryl)phenyl]-5H-naphtho[2,3-c]carbazole (abbreviated) Name: cNCzPA), 9-[3-(10-phenyl-9-antryl)phenyl]-9H -Carbazole (abbreviation: mCzPA), 9-[4-(2,9-diphenyl-10-ant [Lyl)phenyl]-9H-carbazole (abbreviation: 2Ph-CzPA), 7-[4-(2, 9-Diphenyl-10-Anthryl)phenyl]-7H-dibenzo[c,g]carbazol (Abbreviation: 2Ph-cgDBCzPA), 5-phenyl-12-[4-(10-phenyl -9-anthryl)phenyl]-5,12-dihydro-indro[3,2-a]carbazol (Abbreviation: ICzPA), 9-phenyl-9'-[4-(10-phenyl-9-ant [Ryl)phenyl]-3,3'-bi(9H-carbazole) (abbreviation: PCCPA), 9-f phenyl-9'-[4-(10-phenyl-9-antryl)phenyl]-3,2'-bi 9H-carbazole (abbreviation: PCCPA-02), 9-[4-(10-phenyl-9-a [Nntryl)phenyl]-3,9'-bi-9H-carbazole (abbreviation: CzCzPA), 9 -[4-(10-phenylanthracene-9-yl)-phenyl]4-phenyl-9H- Carbazole (abbreviation: CzPAP-03), 9-[4-(3,10-diphenylanthracite) [Cen-9-yl)-phenyl]4-phenyl-9H-carbazole (abbreviation: 2ph-Cz) PAP-03), 9-[4-(6-phenyl-13,13-dimethyl-13H-indeno [1,2-b]Anthracene-11-yl)phenyl]-9H-carbazole (abbreviation: C zIda), 9-[4-(10-phenyl-9-antryl)phenyl]-9H-tribe Nzo[a,c]carbazole (abbreviation: acDBCzPA), 7,10-dihydro-10, 10-dimethyl-7-[4-(10-phenyl-9-anthryl)phenyl]benzo[c Indeno[1,2-g]carbazole (abbreviation: BINCzPA), 7-[4-(10- Phenyl-9-antryl)phenyl]-9-(9-phenyl-9H-carbazole-2 -yl)-7H-benzo[c]carbazole (abbreviation: PCcBCzPA-02), 7-[ 4-(10-phenyl-9-anthryl)phenyl]-9-(9-phenyl-9H-cal Bazole-3-yl)-7H-benzo[c]carbazole (abbreviation: PCcBCzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-tribenzo[a,c ,g]carbazole (abbreviation: acgTBCzPA), 3-[4-(1-naphthyl)pheny [4-(10-phenyl-9-antryl)phenyl]-9H-carbazole (Abbreviation: CzPAαNP), 2-phenyl-9-[4-(10-phenyl-9-antri [Phenyl]-9H-carbazole (abbreviation: CzPAPII), 9-[4-(2,10 -Diphenylanthracene-9-yl)phenyl]-9H-carbazole (abbreviation: 3Ph -CzPA), 7-[4-(2,10-diphenylanthracene-9-yl)phenyl] -7H-dibenzo[c,g]carbazole (abbreviation: 3Ph-cgDBCzPA), 11- [4-(10-phenyl-9-antryl)phenyl]-11H-benzo[a]carbazo Materials such as BBZ (abbreviated as aBCzPA) can be used as the first material H1.

[0071] [ka]

[0072] [ka]

[0073] [ka]

[0074] Furthermore, for example, the first anthracene skeleton may have a carbazole skeleton at position 1 or 5. Compounds having substituents can be used in the first material H1.

[0075] Specifically, the structural formula is shown below: 1,5-bis[4-(9H-carbazole-9-yl) )phenyl]-9,10-diphenylanthracene (abbreviation: 1,5CzP2PA), etc. This can be used as the first material H1.

[0076] [ka]

[0077] In particular, 7-[4-(10-phenyl-9-antryl)phenyl]-7H-dibene Zo[c,g]carbazole (abbreviation: cgDBCzPA) is suitably used in the first material H1. It is possible.

[0078] Furthermore, for example, a compound having a first anthracene skeleton and a furan skeleton is used as the first material. It can be used in H1. Specifically, at position 9 or 10 of the first anthracene skeleton. Compounds having substituents with a furan skeleton can be used as the first material H1.

[0079] For example, consider 6-[4-(10-phenyl-9-antryl)phenyl, whose structural formula is shown below. ]benzo[b]naphtho[1,2-d]furan (abbreviation: BnfPA), 6-[3-(10- Diphenyl-9-anthryl)phenyl]-benzo[b]naphtho[1,2-d]furan Abbreviation: mBnfPA), 8-[4-(10-phenyl-9-antryl)phenyl]-B Nz[b]naphth[1,2-d]furan (abbreviation: BnfPA-02), 10-[3-(1 0-phenyl-9-antryl)phenyl]-benzo[b]phenantro[9,10-d ]Fran (abbreviation: mBpfPA) and other materials can be used as the first material H1.

[0080] [ka]

[0081] Furthermore, for example, a substituent having a furan skeleton at the 2-position of the first anthracene skeleton. The mixture can be used as the first material H1.

[0082] Specifically, the structural formula is shown below: 4-{3-[9,10-di(1-naphthyl)-2-a [Nntryl]phenyl]dibenzofuran (abbreviation: 2mDBfPαDNA), 2-{3-[9 ,10-di(1-naphthyl)-2-anthryl]phenyl}dibenzofuran (abbreviation: 2m DBfPαDNA-02), 4-{3-[9,10-di(2-naphthyl)-2-antri [p]phenyl}dibenzofuran (abbreviation: 2mDBfPβDNA), 4-{3-[9,10 -Bis(3-biphenylyl)-2-antryl]phenyl}dibenzofuran (abbreviation: 2 mDBfP-mBP2A), 10-[3-(9,10-diphenyl-2-anthryl)f [enyl]-benzo[b]phenanthr[9,10-d]furan (abbreviation: 2mBpfPPA) ), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]-benzo[b]na Futo[1,2-d]furan (abbreviation: 2mBnfPPA), 2-[3-(9,10-diphenate) Nyl-2-anthryl)phenyl]dibenzofuran (abbreviation: 2mDBFPPA), 4-[ 3-(9,10-diphenyl-2-anthryl)phenyl]-2,8-diphenyldibene Zofuran (abbreviation: 2mDBFPPA-III), 4-[4-(9,10-diphenyl-2 -Anthryl)phenyl]dibenzofuran (abbreviation: 2DBFPPA-II), 4-[3- (9,10-diphenyl-2-anthryl)phenyl]dibenzofuran (abbreviation: 2mDB) FPPA-II), 6-(9,10-diphenyl-2-anthryl)benzo[b]naphthate [1,2-d]furan (abbreviated as 2BnfPA) can be used as the first material H1. ru.

[0083] [ka]

[0084] [ka]

[0085] Furthermore, for example, a compound having a first anthracene skeleton and a thiophene skeleton is the first It can be used in material H1. Specifically, at position 9 or 10 of the first anthracene skeleton. The first material H1 is a compound having a substituent with a thiophene skeleton at the position. can.

[0086] For example, the structural formula of 4-[3-(10-phenyl-9-antryl)phenyl is shown below. Dibenzothiophene (abbreviation: mDBTPA-II) or similar is used as the first material H1. It is possible.

[0087] [ka]

[0088] Furthermore, for example, the first anthracene skeleton may have a substituent with a thiophene skeleton at the 2-position. The compound can be used in the first material H1.

[0089] Specifically, the structural formula is shown below: 4-[3-(9,10-diphenyl-2-anthryl] )phenyl]dibenzothiophene (abbreviation: 2mDBTPPA-II), 4-[4-(9, 10-Diphenyl-2-Anthryl)phenyl]dibenzothiophene (abbreviation: 2DBTP) PA-II, etc., can be used as the first material H1.

[0090] [ka]

[0091] 《Second material H2》 The second material H2 comprises a second anthracene skeleton, substituents R21 and R22. The substituent R21 is bonded to the second anthracene skeleton, and the substituent R21 has a ring structure consisting only of carbon atoms. It contains a constituent aromatic ring, with substituent R22 bonded to the second anthracene skeleton, and substituent R2 2 contains an aromatic ring whose ring structure is composed only of carbon atoms, and substituent R22 is different from substituent R21. It has the following structure.

[0092] Furthermore, the second material H2 has an asymmetrical structure with the long axis of the second anthracene skeleton as the axis of rotation. It is equipped with, and substituents R21 and R22 are bonded to the second anthracene skeleton, It contains only carbon atoms and hydrogen atoms. Also, in this specification, the structural formula of the second material H2 When the second anthracene skeleton is rotated 360° around its long axis, it becomes clear for the first time. A structure that can overlap with itself, using the long axis of the anthracene skeleton as the axis of rotation, asymmetrical It's called "structure."

[0093] Furthermore, if at least one of substituents R21 or R22 contains a naphthalene ring, The material, or the material in which both substituents R21 and R22 contain a naphthalene ring, is second It can be used in material H2.

[0094] Furthermore, preferably, the second material H2 has lower electron transport properties than the first material H1.

[0095] This can improve reliability. Alternatively, while suppressing the rise in drive voltage, Reliability can be improved. As a result, novel solutions with superior convenience, usefulness, or reliability can be developed. We can provide light-emitting devices.

[0096] For example, the second anthracene skeleton has substituent R21 at position 9 and substituent R21 at position 10. Compounds having substituents R22 with different structures can be used as the second material H2.

[0097] For example, using a material that can be represented by the following general formula (H21) as the second material H2 is possible. can.

[0098] [ka]

[0099] However, in the above general formula (H21), R 202 This is a ring structure composed of hydrogen or carbon. A substituent containing an aromatic ring, R 210 This includes an aromatic ring whose ring structure is composed of carbon atoms. It is a commutative agent, R 202 or R 210 At least one of them contains a naphthalene ring, R 202 and R 210 Excluding R 201 ~R 218 Each of these is independently hydrogen, with carbon atoms numbering from 1 to 6. Alkyl groups, cyclic hydrocarbon groups having 3 to 6 carbon atoms, alkoxy groups having 1 to 6 carbon atoms, shea ¹ groups, halogens, C1 to C6 haloalkyl groups, and substituted or unsubstituted C6 groups. Represents any of the 60 aromatic hydrocarbon groups.

[0100] Specifically, the structural formula is shown below: 9-(1-naphthyl)-10-[4-(2-naphthyl] )phenyl]anthracene (abbreviation: αN-βNPAnth), 9-(1-naphthyl)-1 0-(2-naphthyl)anthracene (abbreviation: α,β-ADN), 9-(3,5-diphen (Abbreviation: H2-14), 9-( 3,5-diphenylphenyl)-10-naphthalene-1-ylanthracene (abbreviation: H2 -15), 9-(3,5-diphenylphenyl)-10-phenylanthracene (abbreviation: H2-16), 9-[3,5-bis(3-methylphenyl)phenyl]-10-phenyl Anthracene (abbreviation: H2-17), 9-(2-naphthyl)-10-phenylanthracene (abbreviation: H2-18), 9-(1-naphthyl)-10-phenylanthracene (abbreviation: H2-19), 9-(3,5-dinaphthalene-1-ylphenyl)-10-(6-phenyl Lunaphthalene-2-yl)anthracene (abbreviation: H2-20), 9-[3,5-bis( 3-methylphenyl)phenyl]-10-(6-phenylnaphthalene-2-yl)ant Helical (abbreviation: H2-21), 9-naphthalene-1-yl-10-(6-phenylnaphtha) Len-2-yl)anthracene (abbreviation: H2-22), 9-(3,5-dinaphthalene-1 -Ilphenyl)-10-naphthalene-1-ylanthracene (abbreviation: H2-23), 9 -(3,5-dinaphthalene-1-ylphenyl)-10-naphthalene-2-ylanthra Sen (abbreviated as H2-24) and other materials can be used as the second material H2.

[0101] [ka]

[0102] [ka]

[0103] Furthermore, for example, the second anthracene skeleton may have a first substituent at position 9 and a first substituent at position 10. In addition to having a second substituent with a different structure from the substitution group, the 2nd position of the second anthracene skeleton Furthermore, a compound having a third substituent can be used as the second material H2.

[0104] For example, the structural formula is shown below: 9-(1-naphthyl)-2-(2-naphthyl)-10- Phenylanthracene (abbreviation: 2βN-αNPhA), 2,9-di(1-naphthyl)-10 -Phenylanthracene (abbreviation: 2αN-αNPhA), 2,10-(1-naphthyl)- 9-Phenylanthracene (abbreviation: 3αN-αNPhA), 9-(1-naphthyl)-10 -Phenyl-2-(4-methyl-1-naphthyl)anthracene (abbreviation: 2MeαN-αN) PhA), 9-(1-naphthyl)-10-phenyl-2-(5-phenyl-1-naphthyl) )Anthracene (abbreviation: 2PαN-αNPhA), 2,9-(1-naphthyl)-10-( 4-Biphenylyl)anthracene (abbreviation: 2αN-αNBPhA), 2-(1-naphthyl )-9-(5-phenyl-1-naphthyl)-10-phenylanthracene (abbreviation: 2αN -PαNPhA), 4-[10-(2-naphthyl)-9-phenyl-2-anthryl]be Nzo[a]anthracene (abbreviation: 3aBA-βNPhA), 4-[9-(2-naphthyl) -10-phenyl-2-anthryl]benzo[a]anthracene (abbreviation: 2aBA-βN PhA), 4-[10-(1-naphthyl)-9-phenyl-2-anthryl]benzo[a ]Anthracene (abbreviation: 3aBA-αNPhA), 4-[9-(1-naphthyl)-10- Phenyl-2-anthryl]benzo[a]anthracene (abbreviation: 2aBA-αNPhA) These can be used in the second material H2.

[0105] [ka]

[0106] [ka]

[0107] In particular, 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthra Sen (abbreviation: αN-βNPAnth) and 2,9-di(1-naphthyl)-10-pheny A substance selected from ruanthracene (abbreviation: 2αN-αNPhA) is suitable for the second material H2. It can be used for this purpose.

[0108] 《Luminescent Material D》 The luminescent material D emits blue fluorescence. For example, the maximum emission spectrum occurs at a wavelength of 435°C. A range of 500 nm or more, preferably a range of 435 nm or more and 490 nm or less. More preferably, a material having a wavelength in the range of 435 nm to 480 nm is a luminescent material. It can be used in D. Specifically, aromatic diamines or heteroaromatic diamines can be used in It can be used for photosensitive material D.

[0109] For example, 3,10-bis[N-(9-phenyl-9H-carbazol-2-yl)-N- [phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,1 0PCA2Nbf(IV)-02) can be used as a luminescent material D.

[0110] [ka]

[0111] This embodiment can be appropriately combined with other embodiments shown herein. .

[0112] (Embodiment 2) In this embodiment, the configuration of a light-emitting device 150 according to one aspect of the present invention will be shown with reference to Figure 1. I'll explain while doing so.

[0113] <Configuration Example of Light-Emitting Device 150> The light-emitting device 150 described in the present embodiment includes an electrode 101, an electrode 102, and a unit 103.

[0114] <Configuration Example of Unit 103> The unit 103 includes a layer 111, a layer 112, and a layer 113 (see FIG. 1). Note that the layer 111 includes a region sandwiched between the layer 112 and the layer 113. For example, the configuration described in Embodiment 1 can be used for the layer 111.

[0115] 《Configuration Example of Layer 112》 The layer 112 includes a region sandwiched between the electrode 101 and the layer 111. It is preferable to use, for the layer 112, a substance having a band gap larger than the band gap of the luminescent material contained in the layer 111 . This makes it possible to suppress energy transfer from excitons generated in the layer 111 to the layer 112. Further, for example, a material having hole-transport properties can be used for the layer 112. The layer 112 can be referred to as a hole-transport layer.

[0116] [Material having hole-transport properties] As a material having hole-transport properties, 1×10 -6 cm 2 / Vs or higher hole mobility is preferably provided. For example, a compound having an aromatic amine skeleton, a compound having a carbazole skeleton , a compound having a thiophene skeleton, a compound having a furan skeleton, or the like can be used .

[0117] For example, a hole-transporting material that can be used for the layer 111 can be used for the layer 112 This can be done. Specifically, a hole-transporting material that can be used as a host material, It can be used in layer 112.

[0118] Furthermore, materials with hole transport properties include amine compounds or π-electron-rich heteroatomaceous rings. Organic compounds having a specific structure are preferred. For example, compounds having an aromatic amine skeleton, carbazo Compounds with a furan skeleton, compounds with a thiophene skeleton, compounds with a furan skeleton, etc. You can use it.

[0119] Examples of compounds having an aromatic amine skeleton include 4,4'-bis[N-(1-naphthyl [N-phenylamino]biphenyl (abbreviation: NPB), N,N'-bis(3-methyl) Phenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine( Abbreviation: TPD), 4,4'-bis[N-(spiro-9,9'-bifluoren-2-yl) -N-phenylamino]biphenyl (abbreviation: BSPB), 4-phenyl-4'-(9-phenyl Phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl Lu-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPA) FLP), 4-phenyl-4'-(9-phenyl-9H-carbazole-3-yl)tri Phenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl Nyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBBi1BP) , 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazole-3-yl)tri Phenylamine (abbreviation: PCBANB), 4,4'-di(1-naphthyl)-4''-(9 -phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBNBB) ), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazole -3-yl)phenyl]fluoren-2-amine (abbreviation: PCBAF), N-phenyl- N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]spiro-9,9 '-Bifluoren-2-amine (abbreviated as PCBASF), etc., can be used.

[0120] Examples of compounds having a carbazole skeleton include 1,3-bis(N-carbazolyl) Benzene (abbreviation: mCP), 4,4'-di(N-carbazolyl)biphenyl (abbreviation: CB) P), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation) :CzTP), 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP) ), etc. can be used.

[0121] Examples of compounds having a thiophene skeleton include 4,4',4''-(benzene-1, 3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,8- Diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]diphenyl Nzothiophene (abbreviation: DBTFLP-III), 4-[4-(9-phenyl-9H-phenyl Luolen-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFL) P-IV), etc., can be used.

[0122] Examples of compounds having a furan skeleton include 4,4',4''-(benzene-1,3, 5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II), 4-{3-[3- (9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran ( Abbreviation: mmDBFFLBi-II), or the like can be used.

[0123] Among the above, a compound having an aromatic amine skeleton or a compound having a carbazole skeleton is preferable because it has excellent reliability, high hole-transport property, and also contributes to reduction in driving voltage. .

[0124] <<Configuration Example of Layer 113>> Layer 113 includes a region sandwiched between layer 111 and electrode 102. Note that in layer 111 a substance having a band gap larger than the band gap of the luminescent material contained therein , a configuration used for layer 113 is preferable. Accordingly, energy transfer from excitons generated in layer 111 to layer 113 can be suppressed. Further, for example, a material having an electron-transport property can be used for layer 113. Layer 113 can be referred to as an electron-transport layer.

[0125] [Material having electron-transport property] As a material having an electron-transport property, the electron mobility when the square root of electric field intensity [V / cm] is 600 is 1×10 -7 cm 2 / Vs or more and 5×10 -5 cm 2 / Vs or less is preferable .. By suppressing the electron-transport property in the electron-transport layer, the injection of electrons into the light-emitting layer amount can be controlled. Alternatively, it is possible to prevent the light-emitting layer from becoming in an electron-excess state .

[0126] For example, an electron-transport material that can be used for layer 111 can be used for layer 113 . Specifically, an electron-transport material that can be used for a host material can be used for layer 113.

[0127] Furthermore, using organic compounds having an anthracene skeleton in materials with electron transport properties is also possible. Yes, it is possible. In particular, organic compounds containing both anthracene and heterocyclic skeletons are preferably used. It is possible.

[0128] For example, an organic compound or anthracene containing both an anthracene skeleton and a nitrogen-containing five-membered ring skeleton. Organic compounds containing both a 1-cell skeleton and a nitrogen-containing 6-membered ring skeleton can be used. Or, two of them Organic compounds containing both a nitrogen-containing five-membered ring skeleton and an anthracene skeleton, which include a complex atom in the ring. This can use organic compounds having a nitrogen-containing six-membered ring skeleton that includes two complex atoms in the ring. Specifically, pyrazole ring, imidazole ring, oxazole ring, thiazole ring, pyrazi A ring, pyrimidine ring, pyridazine ring, etc., can be suitably used in the heterocyclic skeleton.

[0129] Alkali metals, alkali metal compounds, or alkali metal complexes, and substances with electron transport properties Materials containing this can be used in materials that have electron transport properties. In particular, composites of hole injection layers. The material has a relatively deep HOMO level between -5.7eV and -5.4eV. When using such materials, the reliability of light-emitting devices can be improved. It is more preferable that the HOMO level of the material having feedability is -6.0 eV or higher.

[0130] For example, it is preferable to include an 8-hydroxyquinolinate structure. Specifically, 8-hydroxy Lithium hydroxyquinolinato (abbreviation: Liq), sodium 8-hydroxyquinolinato ( Abbreviations such as Naq can be used.

[0131] In particular, monovalent metal ion complexes are preferred, and lithium complexes are preferred, with Liq being more preferred. In addition, if the structure contains 8-hydroxyquinolinate, its methyl-substituted form (for example, 2-hydroxyquinolinate) may be used. Chill-substituted or 5-methyl-substituted compounds can also be used. Alkali metals or alkaline earth metals in elemental form, compound, or complex form have a thickness direction It is preferable that a concentration difference (including cases where it is 0) exists in this case.

[0132] Furthermore, as materials possessing electron transport properties, metal complexes or π-electron-deficient heteroaromatic ring skeletons are used. Organic compounds having this are preferred. Organic compounds having a π-electron-deficient heteroaromatic ring skeleton include For example, heterocyclic compounds having a polyazole skeleton, heterocyclic compounds having a diazine skeleton A heterocyclic compound having a pyridine skeleton is preferred. In particular, a heterocyclic compound having a diazine skeleton is preferred. Compounds or heterocyclic compounds having a pyridine skeleton are preferred due to their good reliability. Heterocyclic compounds with a diazine (pyrimidine or pyrazine) skeleton have high electron transport properties. This allows for a reduction in the drive voltage.

[0133] Examples of metal complexes include bis(10-hydroxybenzo[h]quinolinato)beryl Mu(II) (abbreviation: BeBq2), bis(2-methyl-8-quinolinolate)(4-pheny Luphenolate aluminum(III) (abbreviation: BAlq), bis(8-quinolinolate) Zinc(II) (abbreviation: Znq), bis[2-(2-benzoxazolyl)phenolate] Lead(II) (abbreviation: ZnPBO), bis[2-(2-benzothiazolyl)phenolate] Lead(II) (abbreviated as ZnBTZ), etc., can be used.

[0134] Examples of heterocyclic compounds having a polyazole skeleton include 2-(4-biphenylyl)- 5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD) ), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl) -1,2,4-triazole (abbreviation: TAZ), 1,3-bis[5-(p-tert-br [Tylphenyl)-1,3,4-oxadiazole-2-yl]benzene (abbreviation: OXD- 7) 9-[4-(5-phenyl-1,3,4-oxadiazole-2-yl)phenyl ]-9H-carbazole (abbreviation: CO11), 2,2',2''-(1,3,5-bence Tris(1-phenyl-1H-benzoimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzo Imidazole (abbreviated as mDBTBIm-II), etc., can be used.

[0135] Examples of heterocyclic compounds having a diazine skeleton include 2-[3-(dibenzothiophene). -4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq- II) 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]diben Zo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H -Carbazole-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline ( Abbreviation: 2mCzBPDBq), 4,6-bis[3-(phenanthrene-9-yl)pheni [Lu]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(4-dibenzothin Enyl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,8-bis [3-(dibenzothiophen-4-yl)phenyl]benzo[h]quinazoline (abbreviation: 4 ,8mDBtP2Bqn), etc. can be used.

[0136] Examples of heterocyclic compounds having a pyridine skeleton include 3,5-bis[3-(9H-cal Bazole-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy), 1,3,5- Use ly[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), etc. It is possible.

[0137] This embodiment can be appropriately combined with other embodiments shown herein. .

[0138] (Embodiment 3) In this embodiment, the configuration of a light-emitting device 150 according to one aspect of the present invention will be shown with reference to Figure 1. I'll explain while doing so.

[0139] <Example configuration of light-emitting device 150> The light-emitting device 150 described in this embodiment includes an electrode 101, an electrode 102, and a unit It has layer 103, layer 104, and layer 105. For example, as described in Embodiment 2. The configuration can be used in unit 103.

[0140] 《Example of electrode 101 configuration》 Metals, alloys, conductive compounds, and mixtures thereof can be used for the electrode 101. For example, materials with a work function of 4.0 eV or higher can be suitably used.

[0141] For example, indium tin oxide (ITO), Indium oxide-tin oxide (ITSO), containing ion or silicon oxide, indium oxide Indium oxide (IWZO) containing um-zinc oxide, tungsten oxide, and zinc oxide. The following can be used.

[0142] Also, for example, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), Chromium (Cr), Molybdenum (Mo), Iron (Fe), Cobalt (Co), Copper (Cu), Paraben Dium (Pd) or nitrides of metallic materials (e.g., titanium nitride) can be used. Alternatively, graphene can be used.

[0143] 《Example configuration of electrode 102》 Electrode 102 has a region that overlaps with electrode 101. For example, if a conductive material is used for electrode 102... This is possible. Specifically, metals, alloys, electrically conductive compounds, and mixtures thereof. For example, a material with a smaller work function than electrode 101 can be used for electrode 102. It can be used for electrode 102. Specifically, a material having a work function of 3.8 eV or less. This can be used suitably.

[0144] For example, elements belonging to Group 1 of the periodic table, elements belonging to Group 2 of the periodic table, rare earth metals The group and alloys containing them can be used in electrode 102.

[0145] Specifically, lithium (Li), cesium (Cs), magnesium (Mg), calcium Calcium (Ca), strontium (Sr), europium (Eu), ytterbium (Yb) ) and alloys containing these (MgAg, AlLi) can be used for electrode 102. ru.

[0146] Example of Layer 104 configuration Layer 104 includes a region sandwiched between the electrode 101 and the unit 103. Layer 4 can be called a hole injection layer. For example, if a material with hole injection properties is used in layer 104 It is possible to be there.

[0147] Specifically, acceptor materials and composite materials can be used in layer 104. Furthermore, organic and inorganic compounds can be used as acceptor substances. When an electric field is applied, the acceptor material moves to the adjacent hole transport layer (or positive It can extract electrons from pore transport materials.

[0148] [Example 1 of a material with hole injection properties] A material with acceptor properties can be used in a material with hole injection properties. For example, it can be made easier to inject holes from electrode 101. Alternatively, a light-emitting device The drive voltage of the device can be reduced.

[0149] For example, a compound having an electron-withdrawing group (halogen group or cyano group) has acceptor properties. It can be used in substances that have acceptor properties. It is easy to deposit thin films. This can increase the productivity of light-emitting devices.

[0150] Specifically, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodyne Tan (abbreviation: F4-TCNQ), chloranyl, 2,3,6,7,10,11-hexasia No-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN), 1 ,3,4,5,7,8-Hexafluorotetracyano-naphthoquinodimethane (abbreviation: F6) -TCNNQ), 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-o (Cutafluoro-7H-pyrene-2-ylidene)malononitrile etc., which have hole injection properties It can be used as a material.

[0151] In particular, electron-withdrawing groups are bonded to condensed aromatic rings that have multiple complex atoms, such as HAT-CN. The compound is preferably thermally stable.

[0152] Furthermore, they may have electron-withdrawing groups (especially halogen groups such as fluoro groups or cyano groups) [3] Radialene derivatives are preferred because they have very high electron-accepting properties.

[0153] Specifically, α,α',α''-1,2,3-cyclopropanetriylidetris[4-cy Ano-2,3,5,6-tetrafluorobenzeneacetonitrile], α,α',α''- 1,2,3-Cyclopropanetriylidentris[2,6-Dichloro-3,5-Difluor [4-(trifluoromethyl)benzeneacetonitrile], α,α',α''-1,2 ,3-Cyclopropanetriylidenates[2,3,4,5,6-Pentafluorobenzyl [Acetonitrile] and the like can be used.

[0154] Also, molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, Manganese oxides and the like can be used as acceptor substances.

[0155] Also, phthalocyanine (abbreviated as H2Pc) and copper phthalocyanine (CuPc) are lids. Cyanine-based complex compounds, 4,4'-bis[N-(4-diphenylaminophenyl)- N-phenylamino]biphenyl (abbreviation: DPAB), N,N'-bis{4-[bis(3 -methylphenyl)amino]phenyl}-N,N'-diphenyl-(1,1'-biphenyl Compounds having an aromatic amine skeleton such as (Lu)-4,4'-diamine (abbreviation: DNTPD) It can be used.

[0156] Also, poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid)(P Polymers such as EDOT / PSS can be used.

[0157] [Example 2 of a material with hole injection properties] Composite materials can be used in materials that have hole injection properties. For example, materials that have hole transport properties. A composite material can be used which contains a substance having acceptor properties in the material. This allows for a wider selection of materials for forming electrodes, regardless of the work function. Alternatively, Not only materials with a large work function, but also materials with a small work function can be used for the electrode 101. Cut.

[0158] Various organic compounds can be used in composite materials that possess hole transport properties. For example, Compounds having an aromatic amine skeleton, carbazole derivatives, aromatic hydrocarbons, polymer compounds Materials (oligomers, dendrimers, polymers, etc.) that possess hole transport properties in composite materials It can be used as a food ingredient. -6 cm 2 Objects with a hole mobility of / Vs or greater The quality can be used appropriately.

[0159] Also, for example, a relatively deep HOMO with a HOMO level between -5.7eV and -5.4eV. Substances having energy levels can be suitably used in composite materials that possess hole transport properties. This makes it easier to inject holes into the hole transport layer. Alternatively, a light-emitting device This can improve the reliability of the system.

[0160] Examples of compounds having an aromatic amine skeleton include N,N'-di(p-tolyl)-N, N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[ N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DP) AB), N,N'-bis{4-[bis(3-methylphenyl)amino]phenyl}-N, N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (abbreviation: DNTPD) ), 1,3,5-Tris[N-(4-diphenylaminophenyl)-N-phenylamino Benzene (abbreviation: DPA3B), etc., can be used.

[0161] Examples of carbazole derivatives include 3-[N-(9-phenylcarbazole-3-I] [Phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3 ,6-bis[N-(9-phenylcarbazole-3-yl)-N-phenylamino]-9 -Phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N- (9-phenylcarbazole-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCN1), 4,4'-di(N-carbazolyl)biphenyl (abbreviation: CBP), 1 ,3,5-Tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB), 9-[4-(N-carbazolyl)]phenyl-10-phenylanthracene (abbreviation: Cz) PA), 1,4-bis[4-(N-carbazolyl)phenyl]-2,3,5,6-tetra Phenylenbenzene, etc., can be used.

[0162] Examples of aromatic hydrocarbons include 2-tert-butyl-9,10-di(2-naphthyl). ) Anthracene (abbreviation: t-BuDNA), 2-tert-butyl-9,10-di(1- Naphthyl)anthracene, 9,10-bis(3,5-diphenylphenyl)anthracene (Abbreviation: DPPA), 2-tert-butyl-9,10-bis(4-phenylphenyl) Anthracene (abbreviation: t-BuDBA), 9,10-di(2-naphthyl)anthracene ( Abbreviations: DNA), 9,10-diphenylanthracene (abbreviations: DPAnth), 2-te rt-butylanthracene (abbreviation: t-BuAnth), 9,10-bis(4-methyl- 1-Naphthyl)anthracene (abbreviation: DMNA), 2-tert-butyl-9,10-butyl Su[2-(1-naphthyl)phenyl]anthracene, 9,10-bis[2-(1-naphthyl] Phenyl anthracene, 2,3,6,7-tetramethyl-9,10-di(1-naph (Tyl)anthracene, 2,3,6,7-tetramethyl-9,10-di(2-naphthyl) Ntracene, 9,9'-biantryl, 10,10'-diphenyl-9,9'-biant Lil, 10,10'-bis(2-phenylphenyl)-9,9'-biantrill, 10, 10'-Bis[(2,3,4,5,6-pentaphenyl)phenyl]-9,9'-bian Trill, anthracene, tetracene, rubrene, perylene, 2,5,8,11-tetra( Tert-butyl)perylene, etc., can be used.

[0163] Examples of aromatic hydrocarbons having a vinyl group include 4,4'-bis(2,2-diph (Phenyl vinyl) biphenyl (abbreviation: DPVBi), 9,10-bis[4-(2,2-diphenyl) [Phenylvinyl]phenyl]anthracene (abbreviated as DPVPA), etc., can be used. .

[0164] For example, pentacene, coronene, etc., can also be used.

[0165] Examples of polymer compounds include poly(N-vinylcarbazole) (abbreviation: PVK), Li(4-vinyltriphenylamine) (abbreviation: PVTPA), poly[N-(4-{N'- [4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl )methacrylamide] (abbreviation: PTPDMA), poly[N,N'-bis(4-butylphenyl)] Using [Nyl)-N,N'-bis(phenyl)benzidine (abbreviation: Poly-TPD), etc. It is possible to be there.

[0166] Also, for example, the carbazole skeleton, the dibenzofuran skeleton, the dibenzothiophene skeleton and Materials comprising any of the anthracene skeletons are suitable for use as hole-transporting materials in composite materials. It can be used for this purpose. Also, substitutions containing a dibenzofuran ring or a dibenzothiophene ring. Aromatic amines having a group, aromatic monoamines having a naphthalene ring, or 9-fluorescein. A substance comprising an aromatic monoamine in which a nyl group is bonded to the nitrogen of the amine via an arylene group. It can be used. Furthermore, a substance having an N,N-bis(4-biphenyl)amino group can be used. Having it can improve the reliability of light-emitting devices.

[0167] Examples of hole-transporting materials among these composite materials include N-(4-biphenyl) -6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: B) nfABP), N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1 ,2-d]furan-8-amine (abbreviation: BBABnf), 4,4'-bis(6-phenyl Benzo[b]naphtho[1,2-d]furan-8-yl)-4''-phenyltriphenyl Amine (abbreviation: BnfBB1BP), N,N-bis(4-biphenyl)benzo[b]naph To[1,2-d]furan-6-amine (abbreviation: BBABnf(6)), N,N-bis(4 -Biphenyl)benzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBAB) nf(8)), N,N-bis(4-biphenyl)benzo[b]naphtho[2,3-d]fura N-4-amine (abbreviation: BBABnf(II)(4)), N,N-bis[4-(dibenzo [Fran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1T) P), N-[4-(dibenzothiophen-4-yl)phenyl]-N-phenyl-4-b Phenylamine (abbreviation: ThBA1BP), 4-(2-naphthyl)-4',4''-diph Phenyltriphenylamine (abbreviation: BBAβNB), 4-[4-(2-naphthyl)phenyl [L]-4',4''-diphenyltriphenylamine (abbreviation: BBAβNBi), 4,4 '-diphenyl-4''-(6;1'-binaphthyl-2-yl)triphenylamine (abbreviated) Name: BBAαNβNB), 4,4'-diphenyl-4''-(7;1'-binaphthyl-2 -yl)triphenylamine (abbreviation: BBAαNβNB-03), 4,4'-diphenyl -4''-(7-phenyl)naphthyl-2-yltriphenylamine (abbreviation: BBAPβ) NB-03), 4,4'-diphenyl-4''-(6;2'-binaphthyl-2-yl) Diphenylamine (abbreviation: BBA(βN2)B), 4,4'-diphenyl-4''-(7 ;2'-Binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B-03) ), 4,4'-diphenyl-4''-(4;2'-binaphthyl-1-yl)triphenyl Amine (abbreviation: BBAβNαNB), 4,4'-diphenyl-4''-(5;2'-bina Phthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB-02), 4-(4- Biphenylyl)-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation) :TPBiAβNB), 4-(3-biphenylyl)-4'-[4-(2-naphthyl)phenylyl] [nyl]-4''-phenyltriphenylamine (abbreviation: mTPBiAβNBi), 4-( 4-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltri Phenylamine (abbreviation: TPBiAβNBi), 4-phenyl-4'-(1-naphthyl) Triphenylamine (abbreviation: αNBA1BP), 4,4'-bis(1-naphthyl)trif Phenylamine (abbreviation: αNBB1BP), 4,4'-diphenyl-4''-[4'-( [Luvazol-9-yl)biphenyl-4-yl]triphenylamine (abbreviation: YGTBi) 1BP), 4'-[4-(3-phenyl-9H-carbazole-9-yl)phenyl] Ris(1,1'-biphenyl-4-yl)amine (abbreviation: YGTBi1BP-02), 4 -diphenyl-4'-(2-naphthyl)-4''-{9-(4-biphenylyl)carbazo }triphenylamine (abbreviation: YGTBiβNB), N-[4-(9-phenyl-9 H-carbazole-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]-9 ,9'-Spirobi(9H-Fluorene)-2-amine (abbreviation: PCBNBSF), N,N -Bis(4-biphenylyl)-9,9'-spirobi[9H-fluorene]-2-amine( Abbreviation: BBASF), N,N-bis(1,1'-biphenyl-4-yl)-9,9'-s Pyrobi[9H-fluorene]-4-amine (abbreviation: BBASF(4)), N-(1,1' -biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)- 9,9'-Spirobi(9H-Fluorene)-4-amine (abbreviation: oFBiSF), N-( 4-biphenyl)-N-(dibenzofuran-4-yl)-9,9-dimethyl-9H-flu Oren-2-amine (abbreviation: FrBiF), N-[4-(1-naphthyl)phenyl]-N -[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthylamine( Abbreviation: mPDBfBNBN), 4-phenyl-4'-(9-phenylfluorene-9-i) (L)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenyl Fluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl- 4'-[4-(9-phenylfluoren-9-yl)phenyl]triphenylamine (abbreviated) Name: BPAFLBi), 4-phenyl-4'-(9-phenyl-9H-carbazole-3) -yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4'' -(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCB) Bi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazole-3 -yl)triphenylamine (abbreviation: PCBANB), 4,4'-di(1-naphthyl)- 4''-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBNBB), N-phenyl-N-[4-(9-phenyl-9H-carbazole-3- [Iylphenyl]spiro-9,9'-bifluoren-2-amine (abbreviation: PCBASF) N-(1,1'-biphenyl-4-yl)-9,9-dimethyl-N-[4-(9-phenyl-yl) Nyl-9H-carbazole-3-yl)phenyl]-9H-fluoren-2-amine (abbreviated) Name: PCBBiF), N,N-bis(9,9-dimethyl-9H-fluoren-2-yl) -9,9'-spirobi-9H-fluoren-4-amine, N,N-bis(9,9-dimethicone) Lu-9H-Fluorine-2-Ilu)-9,9'-Spirobi-9H-Fluorine-3-Ami N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spi Robi-9H-fluoren-2-amine, N,N-bis(9,9-dimethyl-9H-fluoren) Using len-2-yl)-9,9'-spirobio-9H-fluoren-1-amine, etc. It is possible.

[0168] [Example 3 of a material with hole injection properties] A material having hole-transporting properties, a substance having acceptor properties, and an alkali metal or alkali. A composite material containing earth metal fluorides can be used as a material with hole injection properties. In particular, composite materials in which fluorine atoms make up 20% or more of the atomic ratio are preferably used. This can be done. This makes it possible to lower the refractive index of layer 111. Alternatively, the light emission device A layer with a low refractive index can be formed inside the chair. Alternatively, an external quantum of a light-emitting device can be formed. Efficiency can be improved.

[0169] Example of Layer 105 configuration Layer 105 comprises a region sandwiched between unit 103 and electrode 102. For example, electron An injectable material can be used in layer 105. Specifically, a donor material The material can be used in layer 105. Alternatively, a donor material can be provided to an electron-transporting material. A composite material containing the substance can be used in layer 105. This allows for, for example, This makes it easier to inject electrons from electrode 102. Alternatively, it can be used to drive a light-emitting device. The voltage can be reduced. Or, regardless of the magnitude of the work function, various conductive materials The following can be used for electrode 102. Specifically, Al, Ag, ITO, silicon, or acid Indium oxide-tin oxide containing silicon dioxide can be used in electrode 102. .

[0170] [Material 1 with electron injection properties] For example, alkali metals, alkaline earth metals, rare earth metals, or compounds thereof as donors It can be used in substances that have properties. Or, tetrathianaphthalene (abbreviation: TTN) Organic compounds such as nickerosene and decamethylnickerosene are used as donor substances. It is possible to stay there.

[0171] Specifically, alkali metal compounds (including oxides, halides, and carbonates), alkaline earth Metallic compounds (including oxides, halides, and carbonates) or rare earth metal compounds (oxidized Materials such as halides and carbonates can be used in materials that have electron injection properties. .

[0172] Specifically, lithium oxide, lithium fluoride (LiF), cesium fluoride (CsF), and fluoride. Calcium carbonate (CaF2), lithium carbonate, cesium carbonate, 8-hydroxyquinolinate - Lithium (abbreviated as Liq), etc., can be used in materials that have electron injection properties.

[0173] [Materials with electron injection properties 2] For example, alkali metals or alkaline earth metals or their compounds, and electron transport properties A composite material containing such a substance can be used as an electron-injection material.

[0174] For example, a material having electron transport properties that can be used in unit 103, and having electron injection properties It can be used with materials that possess it.

[0175] Furthermore, materials containing alkali metal fluorides in a microcrystalline state and substances having electron transport properties This material contains fluorides of alkaline earth metals in a microcrystalline state and a substance that has electron transport properties. It can be used with materials that have electron injection properties.

[0176] In particular, it contains 50 wt% or more of alkali metal fluorides or alkaline earth metal fluorides. The material can be suitably used. Alternatively, an organic compound having a bipyridine skeleton can be suitably used. It can be used. This allows the refractive index of layer 104 to be reduced. Alternatively, This can improve the external quantum efficiency of light-emitting devices.

[0177] [Materials with electron injection properties 3] Furthermore, electrides can be used in materials that have electron injection properties. For example, A substance obtained by adding a high concentration of electrons to a mixed oxide of cium and aluminum is considered to have electron injection properties. It can be used as a material.

[0178] This embodiment can be appropriately combined with other embodiments shown herein. .

[0179] (Embodiment 4) In this embodiment, the configuration of a light-emitting device 150 according to one aspect of the present invention is shown in Figure 2(A). I will explain while referring to it.

[0180] Figure 2(A) shows a light-emitting device according to one embodiment of the present invention, having a configuration different from that shown in Figure 1. This is a cross-sectional view illustrating the structure.

[0181] <Example configuration of light-emitting device 150> Furthermore, the light-emitting device 150 described in this embodiment includes an electrode 101, an electrode 102, and It has a knit 103 and an intermediate layer 106 (see Figure 2(A)). For example, in this embodiment A part of the configuration described in Embodiments 1 to 3 can be used in the light-emitting device 150. can.

[0182] 《Example of the configuration of the intermediate layer 106》 The intermediate layer 106 comprises a region sandwiched between the unit 103 and the electrode 102, and the intermediate layer 10 6 comprises layers 106A and 106B.

[0183] 《Example of Layer 106A Configuration》 Layer 106A includes a region sandwiched between unit 103 and layer 106B. 06A can be called, for example, an electronic relay layer.

[0184] For example, an electron-transporting material can be used in the electron relay layer. The layer in contact with the anode side of the child relay layer is kept away from the layer in contact with the cathode side of the electron relay layer. Yes, it is possible. Alternatively, the layer in contact with the anode side of the electronic relay layer and the layer in contact with the cathode side of the electronic relay layer. The interaction between them can be reduced. Alternatively, the layer in contact with the anode side of the electronic relay layer can be reduced. It allows for a smooth supply of offspring.

[0185] For example, a material having electron-transporting properties can be suitably used in the electron relay layer. Specifically This is the LUMO of a composite material with acceptor properties, exemplified by a material with hole injection properties. (Lowest Unoccupied Molecular Orbital) level and Between the LUMO levels of the material contained in the layer in contact with the cathode side of the electron relay layer, A material having the above characteristics can be suitably used in the electronic relay layer.

[0186] For example, in the range of -5.0eV or higher, preferably -5.0eV or higher and -3.0eV or lower, LU A material possessing electron-transporting properties and having MO levels can be used in the electron relay layer.

[0187] Specifically, phthalocyanine-based materials can be used in the electron relay layer. Alternatively, gold Metal complexes having a group-oxygen bond and aromatic ligands can be used in the electron relay layer. .

[0188] 《Example of Layer 106B Configuration》 Layer 106B can be called, for example, a charge generation layer. The charge generation layer is generated when a voltage is applied. This provides the function of supplying electrons to the anode side and holes to the cathode side. Specifically, Electrons can be supplied to unit 103, which is located on the anode side.

[0189] Furthermore, for example, a composite material, as exemplified by a material having hole injection properties, can be used in the charge generation layer. This can be done. Also, for example, a film containing the composite material and a film containing a material having hole transport properties can be used. The stacked film can be used as a charge generation layer.

[0190] This embodiment can be appropriately combined with other embodiments shown herein. .

[0191] (Embodiment 5) In this embodiment, the configuration of a light-emitting device 150 according to one aspect of the present invention is shown in Figure 2(B). I will explain while referring to it.

[0192] Figure 2(B) shows one configuration of the present invention that differs from the configurations shown in Figures 1 and 2(A). This is a cross-sectional view illustrating the configuration of a light-emitting device.

[0193] <Example configuration of light-emitting device 150> The light-emitting device 150 described in this embodiment includes an electrode 101, an electrode 102, and a unit It has 103, an intermediate layer 106, and unit 103(12) (see Figure 2(B)). The light-emitting device 150 emits light EL1 and light EL1(2). Also, the intermediate layer 10 A configuration comprising 6 and multiple units is a stacked light-emitting device or a tandem light-emitting device. It is sometimes referred to as a device. This enables high-brightness light emission while maintaining a low current density. This can be done. Or, reliability can be improved. Or, at the same brightness, Compared to other methods, the driving voltage can be reduced, or power consumption can be suppressed.

[0194] 《Example configuration of Unit 103(12)》 Unit 103(12) includes a region sandwiched between the intermediate layer 106 and the electrode 102. .

[0195] A configuration that can be used in unit 103 can be used in unit 103(12). In other words, the light-emitting device 150 has multiple stacked units. Furthermore, the number of stacked units is not limited to two; it is possible to stack three or more units. Cut.

[0196] The same configuration as unit 103 can be used for unit 103(12). Alternatively, A different configuration from that of unit 103 can be used for unit 103(12).

[0197] For example, a configuration with a different light-emitting color than that of unit 103 can be used in unit 103(12). It can be used. Specifically, a unit 103 that emits red light and green light and A unit 103(12) that emits blue light can be used. We can provide a light-emitting device that emits light of a certain color. Or, for example, white light We can provide an emission-type light-emitting device.

[0198] 《Example of the configuration of the intermediate layer 106》 The intermediate layer 106 supplies electrons to either unit 103 or unit 103(12), It has the function of supplying holes to the other side. For example, using the intermediate layer 106 described in Embodiment 4 It is possible to be there.

[0199] <Method for fabricating the light-emitting device 150> For example, using a dry method, wet method, vapor deposition method, droplet ejection method, coating method or printing method, electrode 1 01, electrode 102, unit 103, intermediate layer 106, and each of unit 103(12) Layers can be formed. Furthermore, different methods can be used to form each component.

[0200] Specifically, coating equipment such as vacuum deposition equipment, inkjet equipment, and spin coaters. Using a light-emitting device, gravure printing machine, offset printing machine, screen printing machine, etc. It is possible to manufacture 150 chairs.

[0201] For example, electrodes are formed using a wet method or sol-gel method with a paste of a metallic material. This can be done. Specifically, 1 wt% to 20 wt% of indium oxide Using a target to which zinc has been added, indium oxide-zinc oxide is produced by sputtering. A film can be formed. Also, 0.5 wt of tungsten oxide can be added to indium oxide. A target containing 0.1 wt% to 1 wt% zinc oxide is used, with a concentration of 5 wt% or more. Furthermore, indium oxide containing tungsten oxide and zinc oxide is produced by sputtering. (IWZO) films can be formed.

[0202] This embodiment can be appropriately combined with other embodiments shown herein. .

[0203] (Embodiment 6) In this embodiment, the configuration of a light-emitting panel 700 according to one aspect of the present invention will be described with reference to Figure 3. I will explain.

[0204] <Example configuration of the light-emitting panel 700> The light-emitting panel 700 described in this embodiment includes a light-emitting device 150 and a light-emitting device 15 It has 0(2) (Figure 3). The light-emitting device 150 emits light EL1 and the light-emitting device Chair 150(2) emits light EL2.

[0205] For example, the light-emitting device described in any one of Embodiments 1 to 5 is It can be used in the light-emitting device 150.

[0206] <Example configuration of light-emitting device 150(2)> The light-emitting device 150(2) described in this embodiment includes an electrode 101(2) and an electrode 102 It has unit 103(2) and (see Figure 3).

[0207] 《Example configuration of Unit 103(2)》 Unit 103(2) includes a region sandwiched between electrodes 101(2) and 102. Furthermore, unit 103(2) includes layer 111(2).

[0208] Unit 103(2) comprises a single-layer structure or a multi-layer structure. For example, a hole transport layer, an electron transport layer. Hole injection layer, electron injection layer, carrier block layer, exciton block layer, and charge generation A layer selected from functional layers such as layers can be used in unit 103(2).

[0209] Unit 103(2) is a positive electrode that receives electrons injected from one electrode and electrons injected from the other electrode. It has a region that recombines with the pore. For example, a hole injected from electrode 101(2) It has a region that recombines with electrons injected from 2.

[0210] 《Example of Layer 111(2) Configuration 1》 Layer 111(2) includes a light-emitting material and a host material. It can be called a layer. The configuration in which layer 111(2) is placed in the region where holes and electrons recombine is This is preferable. This allows the energy generated by carrier recombination to be efficiently converted into light. It can be injected. Also, layer 111(2) is positioned away from the metal used for electrodes, etc. A configuration that allows for the suppression of quenching caused by metals used in electrodes, etc. Cut.

[0211] For example, fluorescent materials, phosphorescent materials, or materials that exhibit thermally activated delayed fluorescence (TADF). This can be used in luminescent materials. This allows the energy generated by carrier recombination to be used. Energy can be emitted as light from luminescent materials.

[0212] [Fluorescent material] A fluorescent material can be used in layer 111(2). For example, the fluorescent material shown below is an example of fluorescent emission. A material can be used in layer 111(2). However, this is not limited to various known materials. A fluorescent light-emitting material can be used in layer 111(2).

[0213] Specifically, 5,6-bis[4-(10-phenyl-9-antryl)phenyl]-2, 2'-Bipyridine (abbreviation: PAP2BPy), 5,6-Bis[4'-(10-phenyl- 9-Anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2B) Py), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluore] [Phenyl-9-yl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H- Fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemF) LPAPrn), N,N'-bis[4-(9H-carbazole-9-yl)phenyl]- N,N'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9 H-carbazole-9-yl)-4'-(10-phenyl-9-antryl)triphenyl Luamine (abbreviation: YGAPA), 4-(9H-carbazole-9-yl)-4'-(9, 10-Diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N ,9-diphenyl-N-[4-(10-phenyl-9-antryl)phenyl]-9H- Carbazole-3-amine (abbreviation: PCAPA), perylene, 2,5,8,11-tetra (tert-butyl)perylene (abbreviation: TBP), 4-(10-phenyl-9-antylene) (Lu)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated) Name: PCBAPA), N,N''-(2-tert-butylanthracene-9,10-di Ildi-4,1-phenylene)bis[N,N',N'-triphenyl-1,4-phenylene [Diphenyl-N-[4-(9,10-di]diamine] (abbreviation: DPABPA), N,9-diphenyl-N-[4-(9,10-di Phenyl-2-anthryl)phenyl]-9H-carbazole-3-amine (abbreviation: 2P) CAPPA), N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N, N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA), N ,N,N',N',N'',N'',N''',N'''-Octaphenyldibenzo[g ,p]chrysene-2,7,10,15-tetraamine (abbreviation: DBC1), coumarin 30 N-(9,10-diphenyl-2-anthryl)-N,9-diphenyl-9H-carb Zole-3-amine (abbreviation: 2PCAPA), N-[9,10-bis(1,1'-bife [Nyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazole-3- Amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthryl)- N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10-bis(1,1'-biphenyl-2-yl)-2-anthryl]-N,N ',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPABPhA), 9 ,10-bis(1,1'-biphenyl-2-yl)-N-[4-(9H-carbazole- 9-yl)phenyl]-N-phenylanthracene-2-amine (abbreviation: 2YGABPh) A) N,N,9-triphenylanthracene-9-amine (abbreviation: DPhAPhA), Coumarin 545T, N,N'-diphenylquinacridone (abbreviation: DPQd), rubrene, 5,12-Bis(1,1'-biphenyl-4-yl)-6,11-diphenyltetracene (Abbreviation: BPT), 2-(2-{2-[4-(dimethylamino)phenyl]ethenyl}- 6-methyl-4H-pyran-4-ylidene)propanedinitrile (abbreviation: DCM1), 2 -{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[i j]Quinoridine-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinite Lyl (abbreviation: DCM2), N,N,N',N'-tetrakis(4-methylphenyl)teto Spiral-5,11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N,N ,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluorane Ten-3,10-diamine (abbreviation: p-mPhAFD), 2-{2-isopropyl-6- [2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H- Benzo[ij]quinoridine-9-yl)ethenyl]-4H-pyran-4-ylidene}pro Pandinitrile (abbreviation: DCJTI), 2-{2-tert-butyl-6-[2-(1, 1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij ]Quinolysin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitol (Abbreviation: DCJTB), 2-(2,6-bis{2-[4-(dimethylamino)phenyl ]Ethenyl-4H-pyran-4-ylidene)propanedinitrile (abbreviation: BisDCM) ), 2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3 ,6,7-tetrahydro-1H,5H-benzo[ij]quinoridine-9-yl)ethenyl ]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: BisDCJTM), N ,N'-(pyrene-1,6-diyl)bis[(6,N-diphenylbenzo[b]naphtho[ 1,2-d]furan)-8-amine](abbreviation: 1,6BnfAPrn-03), 3,10 -Bis[N-(9-phenyl-9H-carbazol-2-yl)-N-phenylamino] Naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10PCA2Nbf) (IV)-02), 3,10-bis[N-(dibenzofuran-3-yl)-N-phenyl [amino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA) 2Nbf(IV)-02), etc., can be used.

[0214] In particular, 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAP Condensed aromatic diamine compounds, such as pyrenediamine compounds like rn-03, are ho It is preferable because it has high ball-trapping properties and excellent luminous efficiency or reliability.

[0215] [Phosphorescent material 1] Furthermore, phosphorescent materials can be used in layer 111(2). For example, see below. A phosphorescent material can be used in layer 111(2). However, it is not limited to this, and various other materials can be used. Various known phosphorescent materials can be used in layer 111(2).

[0216] Specifically, an organometallic iridium complex having a 4H-triazole skeleton is used in layer 111 (2 It can be used in Tris{2-[5-(2-methylphenyl)-4 -(2,6-dimethylphenyl)-4H-1,2,4-triazole-3-yl-κN2 ]phenyl-κC}iridium(III) (abbreviation: [Ir(mpptz-dmp)3]) Tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato) iridium Um(III) (abbreviation: [Ir(Mptz)3]), Tris[4-(3-biphenyl)- 5-Isopropyl-3-phenyl-4H-1,2,4-Triazolat]Iridium(II) I) (abbreviation: [Ir(iPrptz-3b)3]), etc. can be used.

[0217] Furthermore, for example, organometallic iridium complexes having a 1H-triazole skeleton can be used. This can be done. Specifically, Tris[3-methyl-1-(2-methylphenyl)-5-phenyl [Ir-1H-1,2,4-Triazolat] Iridium(III) (Abbreviation: [Ir(Mptz 1-mp)3]), Tris(1-methyl-5-phenyl-3-propyl-1H-1,2, 4-Triazolat) Iridium(III) (Abbreviation: [Ir(Prptz1-Me)3]) , etc. can be used.

[0218] Furthermore, for example, organometallic iridium complexes having an imidazole skeleton can be used. Specifically, fac-tris[1-(2,6-diisopropylphenyl)-2-fe [Nyl-1H-imidazole] Iridium(III) (abbreviation: [Ir(iPrpmi)3] ), Tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f] [Iridium(III) (abbreviation: Ir(dmpimpt-Me)3)] ), etc. can be used.

[0219] Furthermore, for example, organometallic ylamines using phenylpyridine derivatives having electron-withdrawing groups as ligands. Dium complexes can be used. Specifically, bis[2-(4',6'-difluoro Phenyl)pyridinate-N,C 2’ Iridium(III) tetrakis(1-pyrazolyl) ) Borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pyridyl Nato-N,C 2’ Iridium(III) picolinate (abbreviation: Firpic), bis{ 2-[3',5'-bis(trifluoromethyl)phenyl]pyridinate-N,C 2’}stomach Rydium(III) picolinate (abbreviation: [Ir(CF3ppy)2(pic)]), S[2-(4',6'-difluorophenyl)pyridinate-N,C 2’ Iridium (I II) Acetylacetonate (abbreviated as FIracac), etc., can be used.

[0220] These compounds exhibit blue phosphorescence, emitting light between 440 nm and 520 nm. It is a compound that has a peak at a specific wavelength.

[0221] [Phosphorescent material 2] Furthermore, for example, an organometallic iridium complex having a pyrimidine skeleton can be used in layer 111(2). It can be. Specifically, tris(4-methyl-6-phenylpyrimidinato)yli Dium(III) (abbreviation: [Ir(mppm)3]), Tris(4-t-butyl-6-f Iridium(III) (abbreviation: [Ir(tBuppm)3]), ( Acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(II) I) (Abbreviation: [Ir(mppm)2(acac)]), (acetylacetonato)bis(6) Iridium(III) (abbreviation: [Ir (tBuppm)2(acac)]), (acetylacetonato)bis[6-(2-norbo [Lunyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(nbpp m)2(acac)]), (acetylacetonato)bis[5-methyl-6-(2-methyl [Phenyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(mpm) ppm)2(acac)]), (acetylacetonato)bis(4,6-diphenylpyrim) Dinato-iridium(III) (abbreviation: [Ir(dppm)2(acac)]), etc. are used. It is possible to be there.

[0222] Furthermore, for example, organometallic iridium complexes having a pyrazine skeleton can be used. Specifically, (acetylacetonato)bis(3,5-dimethyl-2-phenylpyradinate) ) Iridium(III) (abbreviation: [Ir(mppr-Me)2(acac)]), (Acetyl (Tylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyradinato)yl Dium(III) (abbreviation: [Ir(mppr-iPr)2(acac)]), etc. are used. It is possible.

[0223] Furthermore, for example, organometallic iridium complexes having a pyridine skeleton can be used. Specifically, Tris(2-phenylpyridinato-N,C) 2’ ) Iridium (III) (abbreviated) Name: [Ir(ppy)3]), bis(2-phenylpyridinato-N,C) 2’ )iridium (III) Acetylacetonate (abbreviation: [Ir(ppy)2(acac)]), bis( Benzo[h]quinolinate) Iridium(III) acetylacetonate (abbreviation: [Ir( bzq)2(acac)]), Tris(benzo[h]quinolinate) iridium(III) (Abbreviation: [Ir(bzq)3]), Tris(2-phenylquinolinato-N,C) 2’ ) Iri Dium(III) (abbreviation: [Ir(pq)3]), bis(2-phenylquinolinato-N, C 2’ Iridium(III) acetylacetonate (abbreviation: [Ir(pq)2(aca c)]), [2-d3-methyl-(2-pyridinyl-κN)benzofloxacin[2,3-b]py Lysine-κC]bis[2-(5-d3-methyl-2-pyridyl-κN2)phenyl-κ] Iridium(III) (abbreviation: [Ir(5mppy-d3)2(mbfpypy-d3)]) ]), [2-d3-methyl-(2-pyridinyl-κN)benzofloxacin[2,3-b]pyridinyl [n-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (Abbreviation: [Ir(ppy)2(mbfpypy-d3)]), etc. can be used.

[0224] Furthermore, for example, rare earth metal complexes can be used. Specifically, tris(acetyl Acetonate (monophenanthroline) terbium(III) (abbreviation: [Tb(acac Examples include 3(Phen)), etc.

[0225] These compounds primarily exhibit green phosphorescence, and their emission range is from 500 nm to 600 nm. It has a peak at the emission wavelength. Furthermore, organometallic iridium complexes with a pyrimidine skeleton are It is particularly preferable because it also offers outstanding reliability and luminous efficiency.

[0226] [Phosphorescent material 3] Furthermore, for example, an organometallic iridium complex having a pyrimidine skeleton can be used in layer 111(2). It is possible. Specifically, (diisobutylylmethanato)bis[4,6-bis(3- [Methylphenyl]pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm)] 2(dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipi Valoylmethanato) Iridium(III) (Abbreviation: [Ir(5mdppm)2(dpm) ]), bis[4,6-di(naphthalene-1-yl)pyrimidinato](dipivaloylmethana (T) Iridium(III) (abbreviation: [Ir(d1npm)2(dpm)]), etc. are used. It is possible.

[0227] Furthermore, for example, organometallic iridium complexes having a pyrazine skeleton can be used. Specifically, (acetylacetonato)bis(2,3,5-triphenylpyradinato)yli Dium(III) (abbreviation: [Ir(tppr)2(acac)]), bis(2,3,5- Triphenylpyrazinate (dipivaloylmethanato) Iridium(III) (abbreviation: [I r(tppr)2(dpm)]), (acetylacetonate)bis[2,3-bis(4-f Iridium(III) (abbreviation: Ir(Fdpq)2) (acac)]), etc. can be used.

[0228] Furthermore, for example, organometallic iridium complexes having a pyridine skeleton can be used. Specifically, Tris(1-phenylisoquinolinato-N,C) 2’ Iridium (III) (Abbreviation: [Ir(piq)3]), bis(1-phenylisoquinolinato-N,C) 2’ )stomach Lysium(III) acetylacetonate (abbreviation: [Ir(piq)2(acac)]) , etc. can be used.

[0229] Furthermore, for example, platinum complexes can be used. Specifically, 2, 3, 7, 8, 12, 13,17,18-Octaethyl-21H,23H-Porphyrin Platinum(II) (Abbreviation: PtOEP, etc., can be used.

[0230] Furthermore, for example, rare earth metal complexes can be used. Specifically, tris(1,3- Diphenyl-1,3-propanedionato)(monophenanthroline) europium(II) I) (Abbreviation: [Eu(DBM)3(Phen)]), Tris[1-(2-tenoyl)-3 ,3,3-trifluoroacetonate](monophenanthroline) europium(III) (Abbreviation: [Eu(TTA)3(Phen)]), etc. can be used.

[0231] These compounds exhibit red phosphorescence, emitting light between 600 nm and 700 nm. It has a light peak. Also, organometallic iridium complexes with a pyrazine skeleton are used in display devices. A red emission with a chromaticity suitable for use is obtained.

[0232] [Substances exhibiting thermally activated delayed fluorescence (TADF)] A material exhibiting thermally activated delayed fluorescence (TADF) (also called a TADF material) is placed in layer 111(2). It can be used. For example, the TADF material shown below can be used in layer 111(2). This can be done. However, it is not limited to this, and various known TADF materials can be used in layer 111(2). It can be used for this purpose.

[0233] For example, fullerenes and their derivatives, acridines and their derivatives, eosin derivatives, etc. It can be used in ADF materials. Also, magnesium (Mg), zinc (Zn), cadmium Um (Cd), tin (Sn), platinum (Pt), indium (In), or palladium Metal-containing porphyrins, including those containing (Pd), can be used in TADF materials.

[0234] Specifically, the protoporphyrin-tin fluoride complex (SnF2(P) is shown in the structural formula below. roto IX), Mesoporphyrin-tin fluoride complex (SnF2(Meso IX) ), hematoporphyrin-tin fluoride complex (SnF2(Hemato IX)), copro Porphyrin tetramethyl ester-tin fluoride complex (SnF2(Copro III- 4Me)), Octaethylporphyrin-tin fluoride complex (SnF2(OEP)), Ethyl Oporphyrin-tin fluoride complex (SnF2(Etio I)), octaethylporphyrin Phosphorus-platinum chloride complex (PtCl2OEP), etc., can be used.

[0235] [ka]

[0236] Furthermore, for example, it may have one or both of a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring. These heterocyclic compounds can be used in TADF materials.

[0237] Specifically, the structural formula is as follows: 2-(biphenyl-4-yl)-4,6-bis(12 -phenylindoro[2,3-a]carbazole-11-yl)-1,3,5-triazi (Abbreviation: PIC-TRZ), 9-(4,6-diphenyl-1,3,5-triazine-2) -yl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation: PCCz) Tzn), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H- Carbazole-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine ( Abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazine-10-yl)phen [Lu]-4,6-diphenyl-1,3,5-triazine (abbreviation: PXZ-TRZ), 3-[ 4-(5-phenyl-5,10-dihydrophenazine-10-yl)phenyl]-4,5 -Diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9- Dimethyl-9H-acridine-10-yl)-9H-xanthene-9-one (abbreviation: AC) RXTN), bis[4-(9,9-dimethyl-9,10-dihydroacrylidine)phenyl ]Sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10'H-spiro[ Using acridine-9,9'-anthracene]-10'-one (abbreviated as ACRSA), etc. It is possible.

[0238] The heterocyclic compound has a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring, It is preferable because it has high electron transport and hole transport properties. In particular, it has a π-electron-deficient heteroaromatic ring. Among the skeletons, the pyridine skeleton and the diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyrida The din skeleton and triazine skeleton are preferred because they are stable and reliable. In particular, ben Zoflopyrimidine skeleton, benzothienopyrimidine skeleton, benzoflopyrazine skeleton, benzo The thienopyrazine skeleton is preferred because it has high acceptability and good reliability.

[0239] Furthermore, among skeletons having a π-electron-rich heteroaromatic ring, the acridine skeleton and phenoxazine The skeleton, phenothiazine skeleton, furan skeleton, thiophene skeleton, and pyrrole skeleton are stable. Because of its good reliability, it is preferable to have at least one of the skeletal structures. In terms of structural integrity, it's the dibenzofuran skeleton, and in terms of thiophene skeleton, it's the dibenzothiophene skeleton. Each is preferable. In addition, as for the pyrrole skeleton, the indole skeleton, the carbazole skeleton, Indolocarbazole skeleton, bicarbazole skeleton, 3-(9-phenyl-9H-carbazo The yl-3-yl)-9H-carbazole skeleton is particularly preferred.

[0240] Furthermore, in substances in which a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring are directly bonded, Both the electron-donating ability of electron-excessive heteroaromatic rings and the electron-accepting ability of π-electron-deficient heteroaromatic rings become stronger. Therefore, the energy difference between the S1 and T1 levels becomes smaller, allowing for efficient acquisition of thermally activated delayed fluorescence. This is particularly preferable. Furthermore, instead of a π-electron-deficient heteroaromatic ring, a cyano group can be used. Aromatic rings to which electron-withdrawing groups are bonded may also be used. In addition, aromatic rings may be used as π-electron-rich skeletons. A amine skeleton, a phenazine skeleton, and the like can be used.

[0241] Furthermore, as π-electron-deficient skeletons, xanthene skeletons, thioxanthene dioxide skeletons, and Xadiazole skeleton, triazole skeleton, imidazole skeleton, anthraquinone skeleton, fe Boron-containing skeletons such as nylborane and volanthrene, benzonitrile or cyanobenzene Aromatic rings or heteroaromatic rings having nitrile or cyano groups, such as benzophenone, etc. Rubonyl skeletons, phosphine oxide skeletons, sulfone skeletons, etc., can be used.

[0242] Thus, at least one of the π-electron-deficient heteroaromatic ring and the π-electron-excess heteroaromatic ring Alternatively, π-electron-deficient and π-electron-excess skeletons can be used.

[0243] [ka]

[0244] TADF materials are characterized by a small difference between the S1 and T1 levels, and triple intersystem crossing occurs due to reverse intersystem crossing. A function that can convert energy from singlet excitation energy to singlet excitation energy. It is a material that possesses this property. Therefore, the triplet excitation energy is obtained by a small amount of thermal energy. Upconversion to the multiplet excitation energy (reverse intersystem crossing) is possible, and the singlet excited state can be efficiently converted. It can be generated easily. Furthermore, the triplet excitation energy can be converted into luminescence. .

[0245] Furthermore, an excited complex (exciplex) is formed by two different substances forming an excited state. Exciplex (also called 'x' or 'exciplex') is a state where the difference between the S1 level and the T1 level is extremely small. As a TADF material capable of converting triplet excitation energy to singlet excitation energy, It has the function of being functional.

[0246] Furthermore, phosphorescence observed at low temperatures (e.g., 77K to 10K) can be used as an indicator of the T1 level. A vector can be used. For TADF materials, the short-wavelength tail of its fluorescence spectrum is Draw a tangent line, and set the energy at the wavelength of the extrapolation line as the S1 level, and the phosphorescence spectrum When a tangent is drawn at the tail on the short wavelength side, and the energy at the wavelength of the extrapolation is taken as the T1 level, Preferably, the difference between S1 and T1 is 0.3 eV or less, and preferably 0.2 eV or less. And is even more preferable.

[0247] Furthermore, when using TADF material as a light-emitting material, the S1 level of the host material is the TADF material. It is preferable that the T1 level of the host material is higher than the S1 level of the TADF material. A higher rank is preferable.

[0248] 《Example of Layer 111(2) Configuration 2》 Materials with carrier transport properties can be used as host materials. For example, materials with hole transport properties Materials possessing electron transport properties, TADF materials, materials with an anthracene skeleton Mixed materials and the like can be used as the host material.

[0249] [Materials with hole transport properties] For example, a hole-transporting material that can be used in layer 112 can be used in layer 111. This can be done. Specifically, the hole transport material described in Embodiment 2 is used as the host material It can be used as a food ingredient.

[0250] [Materials with electron transport properties] For example, if an electron-transporting material that can be used in layer 113 is used in layer 111... This can be done. Specifically, the electron transport material described in Embodiment 2 is used as the host material It can be used as a food ingredient.

[0251] [TADF material] The TADF material exemplified earlier can be used as the host material. When used as a material, the triplet excitation energy generated by the TADF material is obtained through reverse intersystem crossing. It is converted into singlet excitation energy, and then energy is transferred to the light-emitting material, resulting in light emission. The luminescence efficiency of the vice can be increased. At this time, the TADF material acts as an energy donor and It functions in this way, and the light-emitting material acts as an energy acceptor.

[0252] This is very effective when the above-mentioned light-emitting material is a fluorescent material. In order to obtain high luminescence efficiency, the S1 level of the TADF material is higher than the S1 level of the fluorescent material. It is preferable that the T1 level of the TADF material is higher than the S1 level of the fluorescent material. A high level is preferable. Therefore, the T1 level of the TADF material is the same as the T1 level of the fluorescent material. A higher value is preferable.

[0253] Furthermore, it exhibits emission at wavelengths that overlap with the wavelength of the lowest-energy absorption band of the fluorescent material. It is preferable to use a TADF material that exhibits fluorescence emission. This is preferable because the transfer of excitation energy to the material becomes smoother, and luminescence is obtained efficiently. stomach.

[0254] Furthermore, singlet excitation energy is efficiently generated from triplet excitation energy through reverse intersystem crossing. For this to occur, it is preferable that carrier recombination occurs in the TADF material. The triplet excitation energy generated by the DF material is transferred to the triplet excitation energy of the fluorescent material. It is preferable not to do so. To that end, the fluorescent material has a luminescent phosphodiolus ( It is preferable to have a protecting group around the skeleton that causes light emission. The protecting group is a π bond. Substituents that do not have a substituent are preferred, saturated hydrocarbons are preferred, specifically those having 3 to 10 carbon atoms. The alkyl group below, substituted or unsubstituted cycloalkyl groups with 3 to 10 carbon atoms, carbon Examples include trialkylsilyl groups with a number between 3 and 10, and it is even preferable if there are multiple protecting groups. Substituents that do not have a π bond have poor carrier transport function, therefore carrier transport Alternatively, with minimal impact on carrier recombination, the luminescent phosphodiphorus of the TADF material and the fluorescent material It can increase the distance between them.

[0255] Here, a luminescent group refers to the group of atoms (skeleton) that causes light emission in a fluorescent material. The photon is preferably a skeleton having π bonds, preferably containing an aromatic ring, and also a condensed aromatic ring. It is preferable that it has a condensed heteroaromatic ring.

[0256] Examples of condensed aromatic rings or condensed heteroaromatic rings include the phenanthrene skeleton, the stilbene skeleton, and acrylic acid. Examples include lidone skeletons, phenoxazine skeletons, and phenothiazine skeletons. Naphthalene in particular. Skeleton, anthracene skeleton, fluorene skeleton, chrysene skeleton, triphenylene skeleton, tetra Cene skeleton, pyrene skeleton, perylene skeleton, coumarin skeleton, quinacridone skeleton, naphthobis Fluorescent materials having a nzofuran skeleton are preferred because they have a high fluorescence quantum yield.

[0257] [Materials containing an anthracene skeleton] When using a fluorescent material as the light-emitting material, the host material should have an anthracene skeleton. Materials that are suitable for this purpose are used as host materials for fluorescent materials. By using this method, it is possible to realize a light-emitting layer with excellent luminescence efficiency and durability.

[0258] Examples of materials having an anthracene skeleton used as a host material include diphenylanthracene Substances having a 9,10-diphenylanthracene skeleton are chemically stable. Therefore, it is preferable. Also, if the host material has a carbazole skeleton, hole injection and transport properties This is preferable because it increases the benzene ring, but benzocarbazole is a carbazole in which a benzene ring is further condensed. When a carbazole skeleton is present, the HOMO becomes about 0.1 eV shallower than that of carbazole, and holes are inserted. It is preferable because it becomes cheaper.

[0259] In particular, when the host material contains a dibenzocarbazole skeleton, HOMO is more effective than carbazole. The depth becomes about 0.1 eV shallower, making it easier for holes to enter, and it also has excellent hole transport properties and heat resistance. It is preferable because it increases the temperature. Therefore, even more preferable as a host material are 9, 10 - Diphenylanthracene skeleton and carbazole skeleton (or benzocarbazole skeleton) It is a substance that simultaneously possesses a (or dibenzocarbazole skeleton). From a transport standpoint, the carbazole skeleton should be replaced with a benzofluorene skeleton or a dibenzo A fluorene skeleton may be used.

[0260] Examples of substances having an anthracene skeleton include 9-phenyl-3-[4-(10-phenyl Phenyl-9-antryl)phenyl]-9H-carbazole (abbreviation: PCzPA), 3- [4-(1-naphthyl)-phenyl]-9-phenyl-9H-carbazole (abbreviation: PC) PN), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carb Zole (abbreviation: CzPA), 7-[4-(10-phenyl-9-antryl)phenyl] -7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 6-[3-(9 ,10-diphenyl-2-anthryl)phenyl]-benzo[b]naphtho[1,2-d] Furan (abbreviation: 2mBnfPPA), 9-phenyl-10-{4-(9-phenyl-9H Fluorene-9-yl)biphenyl-4'-yl}anthracene (abbreviation: FLPPA) , 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation) αN-βNPAnth), etc., can be used.

[0261] In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA exhibit very good characteristics. This indicates.

[0262] [Example of mixed material composition 1] Furthermore, a material made by mixing multiple types of substances can be used as the host material. For example, electron A material obtained by mixing a material with transport properties and a material with hole transport properties is suitable as a host material. It can be used for mixing an electron-transporting material with a hole-transporting material. This allows for easy adjustment of the carrier transportability of layer 111(2). Furthermore, The recombination region can also be easily controlled. The hole transport properties contained in the mixed material... The weight ratio of hole-transporting material to electron-transporting material is: hole-transporting material: electron-transporting material The ratio of materials should be between 1:19 and 19:1.

[0263] [Example of mixed material composition 2] Furthermore, a material mixed with a phosphorescent substance can be used as the host material. When a substance is used as a light-emitting material, it provides excitation energy to the fluorescent material. It can be used as an energy donor.

[0264] Furthermore, a mixed material containing a material that forms an excited complex can be used as the host material. For example, the emission spectrum of the excited complex that is formed is the lowest energy absorption band of the luminescent material. A material whose wavelength overlaps with that of the host material can be used. This allows for energy transfer. This makes the process smoother and improves luminous efficiency. Alternatively, it allows for suppression of the drive voltage. It is possible.

[0265] Furthermore, at least one of the materials forming the excitation complex may be a phosphorescent material. By doing so, the triplet excitation energy is efficiently converted to the singlet excitation energy through reverse intersystem crossing. It can be converted to -.

[0266] As a combination of materials that efficiently form excited complexes, HO is a material with hole transport properties. It is preferable that the MO level is above the HOMO level of the electron-transporting material. If the LUMO level of a material with electron-transporting properties is higher than or equal to the LUMO level of a material with electron-transporting properties Preferred. Note that the LUMO and HOMO levels of the material are controlled by cyclic voltammetry. From the electrochemical properties (reduction potential and oxidation potential) of the material measured by CV (coefficient of variation) It can be derived.

[0267] Furthermore, the formation of excited complexes is related to, for example, the emission spectrum of hole-transporting materials and electron-transporting properties. The emission spectrum of a material having the above properties, and the emission spectrum of a mixed film obtained by mixing these materials. In comparison, the emission spectrum of the mixed film is shifted to longer wavelengths than the emission spectra of each individual material. Alternatively, this can be confirmed by observing a phenomenon (which has a new peak on the longer wavelength side). Alternatively, transient photoluminescence (PL) and electron transport of materials with hole transport properties. The transient PL of materials possessing certain properties and the transient PL of a mixed film obtained by mixing these materials are compared, and the mixing The transient PL lifetime of the film has a longer lifetime component than the transient PL lifetime of each material, or a delayed lifetime component. This can be confirmed by observing differences in transient responses, such as an increase in the proportion of the time. Furthermore, the transient PL mentioned above can be interpreted as transient electroluminescence (EL). No. That is, transient EL for hole-transporting materials, transient E for electron-transporting materials. By comparing the transient EL of L and mixed films and observing the differences in transient response, Excitation complex formation can be confirmed.

[0268] This embodiment can be appropriately combined with other embodiments shown herein. .

[0269] (Embodiment 7) In this embodiment, light emission using the light-emitting device described in any one of Embodiments 1 to 6. Let me explain the device.

[0270] In this embodiment, the light-emitting device described in any one of Embodiments 1 to 6 is used for fabrication. The light-emitting device described will be explained using Figure 4. Figure 4(A) shows the light-emitting device. The top view, Figure 4(B), is a cross-sectional view of Figure 4(A) cut along lines AB and CD. This light emission The device controls the light emission of the light-emitting device, and the drive circuit section (source) is shown by the dotted line. It includes a line drive circuit (601), a pixel section (602), and a drive circuit section (gate line drive circuit (603)). Furthermore, 604 is the sealing substrate, and 605 is the sealing material, and the inside surrounded by the sealing material 605 This is space 607.

[0271] The routing wire 608 is input to the source line drive circuit 601 and the gate line drive circuit 603. FPC (Flexible Printed Circuit) is a wiring system for transmitting signals and serves as an external input terminal. (Input circuit) 609 receives video signals, clock signals, start signals, reset signals, etc. Receive. Note that only the FPC is shown in the diagram here, but this FPC has a print distribution A wire substrate (PWB) may be attached. The light-emitting device in this specification is a light-emitting device This includes not only the main unit but also the state in which the FPC or PWB is attached to it. ru.

[0272] Next, the cross-sectional structure will be explained using Figure 4(B). The drive circuit section is located on the element substrate 610. And a pixel section is formed, but here, the source line drive circuit 601 which is the drive circuit section and One pixel in the pixel section 602 is shown.

[0273] The element substrate 610 is a substrate made of glass, quartz, organic resin, metal, alloy, semiconductor, etc. FRP (Fiber Reinforced Plastics), PVF (Polyvinyl Fiber) Made using a plastic substrate made of fluoride, polyester, or acrylic resin. Just make it.

[0274] The structure of the transistor used in the pixel or driving circuit is not particularly limited. For example, reverse It may be a hoop-type transistor or a stagger-type transistor. Either a top-gate or bottom-gate transistor is acceptable. The semiconductor material used is not particularly limited; for example, silicon, germanium, silicon carbide, Gallium nitride and the like can be used. Alternatively, In-Ga-Zn metal oxides, etc. An oxide semiconductor containing at least one of indium, gallium, and zinc may also be used.

[0275] The crystallinity of semiconductor materials used in transistors is not particularly limited; amorphous semiconductors, Crystalline semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors, or semiconductors with a crystalline region in part) Any semiconductor having the properties of [the semiconductor material] may be used. If a semiconductor having crystalline properties is used, transients may occur. This is preferable because it suppresses the deterioration of the stanic characteristics.

[0276] Here, in addition to the transistors provided in the above-mentioned pixels or driving circuits, there are also touch sensors, which will be described later. For semiconductor devices such as transistors used in applications like the above, oxide semiconductors are preferred. It is preferable to use oxide semiconductors, which have a wider band gap than silicon. By using oxide semiconductors with a wider bandgap than silicon, transistors can be made The current in the "F" state can be reduced.

[0277] The above oxide semiconductor preferably contains at least indium (In) or zinc (Zn). It is also In-M-Zn oxides (where M is Al, Ti, Ga, Ge, Y, Zr, Sn, It is an oxide semiconductor containing an oxide (such as a metal like La, Ce, or Hf). It is preferable.

[0278] In particular, the semiconductor layer has multiple crystalline portions, and the c-axis of the crystalline portion is the surface on which the semiconductor layer is formed. Alternatively, an acid oriented perpendicular to the upper surface of the semiconductor layer and having no grain boundaries between adjacent crystalline regions. It is preferable to use a crystalline semiconductor film.

[0279] By using such materials as semiconductor layers, fluctuations in electrical properties are suppressed, resulting in high reliability. This makes it possible to create a transistor.

[0280] Furthermore, due to its low off-current, the transistor having the aforementioned semiconductor layer can be used to... This makes it possible to retain the charge stored in the capacity over a long period of time. By applying a generator to each pixel, the gradation of the image displayed in each display area is maintained while driving It also becomes possible to shut down the circuit. As a result, it is possible to realize electronic devices with extremely reduced power consumption. It can be expressed.

[0281] It is preferable to provide an undercoat to stabilize the characteristics of the transistor. The undercoat may be: Inorganic silicon oxide films, silicon nitride films, silicon oxide-nitride films, silicon nitride-oxide films, etc. It can be fabricated using an insulating film, either as a single layer or in a multilayer configuration. The underlayer is fabricated by sputtering. CVD (Chemical Vapor Deposition) method (Plasma CVD method) , thermal CVD method, MOCVD (Metal Organic CVD) method, ALD ( Formed using methods such as Atomic Layer Deposition, coating, and printing. Yes, it is possible. However, a base coat does not need to be applied unless necessary.

[0282] Note that FET623 is one of the transistors formed in the source line drive circuit 601. Furthermore, the drive circuit consists of various CMOS circuits, PMOS circuits, or NMOS circuits. It is sufficient to form it in this way. In addition, in this embodiment, a driver integrated with a drive circuit formed on the substrate. While this indicates a type, it is not always necessary, and the drive circuit can be formed externally rather than on the circuit board. can.

[0283] Furthermore, the pixel section 602 includes a switching FET 611 and a current control FET 612 and its drive It is formed by a plurality of pixels, each including a first electrode 613 electrically connected to the rain. However, it is not limited to this, and can also be used as a pixel unit combining three or more FETs and a capacitive element. good.

[0284] Furthermore, an insulator 614 is formed covering the end of the first electrode 613. Here, positive It can be formed by using a photosensitive acrylic resin film of a mold.

[0285] Furthermore, in order to ensure good coverage of the EL layer and other layers formed later, the upper end of the insulator 614 is Alternatively, a curved surface with curvature is formed at the lower end. For example, the material of the insulator 614 and When a positive-type photosensitive acrylic resin is used, the radius of curvature is only at the upper end of the insulator 614. It is preferable to have a curved surface having a thickness of 0.2 μm or more and 3 μm or less. Also, insulating material 61 4. Either a negative-type photosensitive resin or a positive-type photosensitive resin can be used. Cut.

[0286] An EL layer 616 and a second electrode 617 are formed on the first electrode 613, respectively. Here, the material used for the first electrode 613 which functions as an anode is a material with a work function of It is desirable to use large materials. For example, ITO film or silicon-containing indigo Indium oxide film containing 2 wt% to 20 wt% zinc oxide, nitriding In addition to single-layer films such as titanium films, chromium films, tungsten films, Zn films, and Pt films, titanium nitride films are also available. Lamination of a film mainly composed of aluminum, and a titanium nitride film and a film mainly composed of aluminum A three-layer structure consisting of a film and a titanium nitride film can be used. Note that in a laminated structure, wiring... It has low resistance as an anode, provides good ohmic contact, and can also function as an anode. It is possible.

[0287] Furthermore, the EL layer 616 was coated using a vapor deposition method with a vapor deposition mask, an inkjet method, and a spin coating method. It is formed by various methods such as the above. The EL layer 616 is formed by any one of the embodiments 1 to 6. It includes the configuration described above. Furthermore, other materials constituting the EL layer 616 include: It may be a low-molecular-weight compound or a high-molecular-weight compound (including oligomers and dendrimers). .

[0288] Furthermore, the material used for the second electrode 617, which is formed on the EL layer 616 and functions as a cathode. Examples include materials with a low work function (Al, Mg, Li, Ca, or alloys thereof) It is preferable to use compounds (such as MgAg, MgIn, AlLi, etc.). If the light generated at 616 passes through the second electrode 617, then the second electrode 617 is defined as follows: A thin metal film with a reduced thickness and a transparent conductive film (ITO, 2wt% to 20wt% of sulfate oxide). Indium oxide containing lead, indium tin oxide containing silicon, zinc oxide (ZnO), etc. It is best to use lamination with )

[0289] Furthermore, the first electrode 613, the EL layer 616, and the second electrode 617 form the shape of the light-emitting device. The light-emitting device is described in any one of Embodiments 1 to 6. This is the case. Note that the pixel section is formed by multiple light-emitting devices, but in this embodiment... The light-emitting device in the above includes the light-emitting device described in any one of Embodiments 1 to 6, and Both types of light-emitting devices with configurations other than those listed above may be present in the same configuration.

[0290] Furthermore, by bonding the sealing substrate 604 to the element substrate 610 with the sealing material 605, A light-emitting device is placed in the space 607 surrounded by the sub-substrate 610, the sealing substrate 604, and the sealing material 605. The structure is equipped with chair 618. Furthermore, the space 607 is filled with filler material. In addition to cases where an inert gas (such as nitrogen or argon) is filled, it is also filled with a sealing material. In some cases, a recess is formed in the sealing substrate and a desiccant is placed there to reduce the effects of moisture. This configuration is preferable because it can suppress deterioration.

[0291] Furthermore, it is preferable to use epoxy resin or glass frit for the sealing material 605. Furthermore, it is desirable that these materials be as impermeable to moisture or oxygen as possible. Furthermore, in addition to glass substrates or quartz substrates, FRP (F) can also be used as the material for the sealing substrate 604. Polyvinyl Fluoride (PVF), Reinforced Plastics ), a plastic substrate made of polyester or acrylic resin can be used. .

[0292] Although not shown in Figure 4, a protective film may be provided on the second electrode. The protective film is an organic resin film. Alternatively, it may be formed with an inorganic insulating film. Also, so as to cover the exposed portion of the sealing material 605 A protective film may be formed. The protective film may be on the surface and sides of the pair of substrates, and the sealing layer may be formed. It can be installed to cover exposed sides such as insulating layers.

[0293] The protective film can be made of a material that is impermeable to impurities such as water. This effectively suppresses the diffusion of impurities such as these from the outside to the inside.

[0294] Materials that make up the protective film include oxides, nitrides, fluorides, sulfides, ternary compounds, and metals. Alternatively, polymers can be used, for example, aluminum oxide, hafnium oxide, etc. Phenium silicate, lanthanum oxide, silicon oxide, strontium titanate, tantalum oxide Titanium dioxide, zinc oxide, niobium oxide, zirconium oxide, tin oxide, yttrium oxide cerium oxide, scandium oxide, erbium oxide, vanadium oxide, or indi oxide Materials containing um, etc., aluminum nitride, hafnium nitride, silicon nitride, tantalum nitride, nitride Materials containing titanium, niobium nitride, molybdenum nitride, zirconium nitride, or gallium nitride, etc. Materials, nitrides containing titanium and aluminum, oxides containing titanium and aluminum, Oxides containing aluminum and zinc, sulfides containing manganese and zinc, cerium and Strontium-containing sulfides, erbium and aluminum-containing oxides, yttri Materials containing oxides, etc., that include um and zirconium can be used.

[0295] The protective film can be formed using a film deposition method that provides good step coverage. This is preferable. One such method is atomic layer deposition (ALD). There is a deposition method. Protecting materials that can be formed using the ALD method. It is preferable to use it in membranes. By using the ALD method, dense cracks or pinholes can be detected. It is possible to form a protective film with reduced defects or uniform thickness. Furthermore, it is possible to reduce the damage inflicted on the processed member when forming the protective film.

[0296] For example, by forming a protective film using the ALD method, a surface with a complex uneven shape, touch A uniform, low-defect protective film can be formed on the top, sides, and back surfaces of the panel.

[0297] As described above, the light-emitting device described in any one of Embodiments 1 to 6 is manufactured. A light-emitting device can be obtained.

[0298] The light-emitting device in this embodiment is a light-emitting device described in any one of Embodiments 1 to 6. Because it uses a specific material, a light-emitting device with good characteristics can be obtained. Specifically, The light-emitting device described in any one of the embodiments 1 to 6 has good luminous efficiency, therefore, power consumption It is possible to make it into a small light-emitting device.

[0299] Figure 5 shows a light-emitting device that emits white light, with a colored layer (color filter) provided. This shows an example of a light-emitting device that has been made full-color. Figure 5(A) shows substrate 1001, base Insulating film 1002, gate insulating film 1003, gate electrodes 1006, 1007, 1008, Interlayer insulating film 1020, second interlayer insulating film 1021, peripheral portion 1042, pixel portion 1040 , drive circuit section 1041, first electrodes 1024W, 1024R, 1024G of the light-emitting device , 1024B, partition wall 1025, EL layer 1028, second electrode 1029 of light-emitting device, seal The stopper plate 1031, sealing material 1032, etc. are shown in the diagram.

[0300] Furthermore, Figure 5(A) shows the colored layers (red colored layer 1034R, green colored layer 1034G, blue The colored layer 1034B is provided on a transparent substrate 1033. Also, the black matrix 1 A 035 layer may be further provided. Transparent substrate 1 provided with a colored layer and a black matrix. 033 is aligned and fixed to substrate 1001. Note that the colored layer and black matrix Kus 1035 is covered with an overcoat layer 1036. Also, in Figure 5(A) This consists of a light-emitting layer that allows light to escape to the outside without passing through the colored layers, and a layer that allows light to escape to the outside by passing through the colored layers of each color. There is a light-emitting layer, and light that does not pass through the colored layer is white, while light that passes through the colored layer is red, green, and blue. Therefore, images can be represented using four colored pixels.

[0301] Figure 5(B) shows the colored layers (red colored layer 1034R, green colored layer 1034G, blue colored layer Example of forming layer 1034B) between the gate insulating film 1003 and the first interlayer insulating film 1020. This was shown. Thus, the colored layer is provided between the substrate 1001 and the sealing substrate 1031. That's good too.

[0302] Furthermore, in the light-emitting device described above, light is taken to the substrate 1001 side on which the FET is formed. Although a light-emitting device with a bottom-emission structure was used, the light emission was taken from the sealing substrate 1031 side. It can also be used as a light-emitting device with a projection structure (top emission type). A cross-sectional view of the light-emitting device is shown in Figure 6. In this case, the substrate 1001 is a substrate that does not transmit light. This can be done. Until the connecting electrode that connects the FET and the anode of the light-emitting device is fabricated, the bottle It is formed in the same manner as a Mu-emission type light-emitting device. Then, the third interlayer insulating film 1037 is formed. It is formed covering electrode 1022. This insulating film may also serve a planarization role. Third The interlayer insulating film 1037 is formed using the same material as the second interlayer insulating film, as well as other known materials. It is possible.

[0303] The first electrodes of the light-emitting device, 1024W, 1024R, 1024G, and 1024B, are located here. It is designated as the anode, but it can also be the cathode. Also, a top-emission type generator as shown in Figure 6. In the case of an optical device, it is preferable that the first electrode be a reflective electrode. Configuration of EL layer 1028 This is a configuration as described as unit 103 in any one of embodiments 1 to 6. Furthermore, the element structure is designed to produce white light emission.

[0304] In the top emission structure shown in Figure 6, the colored layer (red colored layer 1034R, green colored layer) The sealing is performed using a sealing substrate 1031 having a color layer 1034G and a blue colored layer 1034B. This can be done. The encapsulation substrate 1031 has a black matrix positioned between the pixels. 1035 may be provided. Colored layer (red colored layer 1034R, green colored layer 1034G, The blue colored layer (1034B) or black matrix is ​​formed by the overcoat layer (1036). It is acceptable if it is covered. Furthermore, the sealing substrate 1031 shall be a light-transmitting substrate. Furthermore, although an example of full-color display using four colors—red, green, blue, and white—is shown here, there are no particular limitations. Alternatively, full-color display may be performed using four colors: red, yellow, green, and blue, or three colors: red, green, and blue. .

[0305] In top-emission type light-emitting devices, a microcavity structure can be suitably applied. A light-emitting device having a microcavity structure has a first electrode as a reflective electrode and a second electrode as This is obtained by using semi-transparent and semi-reflective electrodes. Between the reflective electrode and the semi-transparent and semi-reflective electrode It has at least an EL layer and at least an emissive layer that forms an emissive region.

[0306] The reflective electrode has a visible light reflectance of 40% to 100%, preferably 70% to 100%. It is %, and its resistivity is 1 × 10⁻⁶. -2 Assume the membrane is less than Ωcm in diameter. Also, semipermeable... The semi-reflective electrode has a visible light reflectance of 20% to 80%, preferably 40% to 70%. , and its resistivity is 1 × 10 -2 Assume the membrane is less than Ωcm in diameter.

[0307] The light emitted from the light-emitting layer contained in the EL layer is reflected by the reflective electrode and the semi-transmitting / semi-reflective electrode. It is reflected and resonates.

[0308] The light-emitting device has a thickness of a transparent conductive film or the aforementioned composite material, carrier transport material, etc. By changing this, the optical distance between the reflective electrode and the semitransmissive / semi-reflective electrode can be altered. This enhances the light of resonant wavelengths between the reflective electrode and the semitransmissive / semi-reflective electrode, and It can attenuate light of wavelengths that do not vibrate.

[0309] Furthermore, the light reflected back by the reflective electrode (the first reflected light) is semi-transmitted from the light-emitting layer. • Because it causes significant interference with the light (first incident light) that directly enters the semi-reflecting electrode, the reflective electrode and The optical distance of the light-emitting layer is (2n-1)λ / 4 (where n is a natural number greater than or equal to 1, and λ is amplified). It is preferable to adjust the wavelength of the emitted light. By adjusting the optical distance, the first By aligning the phase of the reflected light and the first incident light, the light emitted from the light-emitting layer can be further amplified. ru.

[0310] Furthermore, even if the EL layer in the above configuration has a structure with multiple light-emitting layers, it may still be a single light-emitting layer The structure may also have the following characteristics, for example, in combination with the configuration of the tandem light-emitting device described above. Furthermore, multiple EL layers are provided in a single light-emitting device with a charge generation layer in between, and each EL layer This may also be applied to a configuration in which one or more light-emitting layers are formed.

[0311] Having a microcavity structure enhances the emission intensity in the front direction at specific wavelengths. This makes it possible to reduce power consumption. Furthermore, the four sub-colors red, yellow, green, and blue are used. In the case of a light-emitting device that displays images as is, in addition to the brightness enhancement effect of yellow light emission, all sub-pixels By applying a microcavity structure tailored to the wavelength of each color, a light-emitting device with excellent characteristics can be produced. It can be placed there.

[0312] The light-emitting device in this embodiment is a light-emitting device described in any one of Embodiments 1 to 6. Because it uses a specific material, a light-emitting device with good characteristics can be obtained. Specifically, The light-emitting device described in any one of the embodiments 1 to 6 has good luminous efficiency, therefore, power consumption It is possible to make it into a small light-emitting device.

[0313] Up to this point, we have explained active-matrix light-emitting devices, but from here on we will discuss passive devices. A matrix-type light-emitting device will be described. Figure 7 shows a passive light-emitting device fabricated by applying the present invention. This shows a matrix-type light-emitting device. Figure 7(A) is a perspective view showing the light-emitting device, Figure 7( B) is a cross-sectional view obtained by cutting Figure 7(A) along the XY line. In Figure 7, on the substrate 951, An EL layer 955 is provided between electrode 952 and electrode 956. The end of electrode 952 is It is covered with an insulating layer 953. And a partition layer 954 is provided on top of the insulating layer 953. The side walls of the partition layer 954, as they approach the substrate surface, have a gap between one side wall and the other side wall. It has a slope that narrows as the partition becomes narrower. In other words, the cross-section of the partition wall layer 954 in the short-side direction is It is a shape, and the bottom edge (which faces the same direction as the surface direction of the insulating layer 953 and is in contact with the insulating layer 953) ) is the upper edge (the edge that faces the same direction as the surface direction of the insulating layer 953 and does not come into contact with the insulating layer 953). It is shorter than that. In this way, by providing the partition layer 954, light emission devices caused by static electricity, etc. This can prevent defects in the system. Furthermore, it can also be implemented in passive matrix type light-emitting devices. The light-emitting device described in any one of forms 1 to 6 is used, and the light-emitting device is highly reliable. It can be used as a light-emitting device with low power consumption.

[0314] The light-emitting device described above consists of numerous tiny light-emitting devices arranged in a matrix. Because these can be controlled, it can be suitably used as a display device for representing images. It is a light-emitting device.

[0315] Furthermore, this embodiment can be freely combined with other embodiments.

[0316] (Embodiment 8) In this embodiment, the light-emitting device described in any one of Embodiments 1 to 6 is used as an illumination device. An example of its use will be explained with reference to Figure 8. Figure 8(B) is a top view of the lighting device, Figure 8( A) is a cross-sectional view of ef in Figure 8(B).

[0317] The lighting device in this embodiment has a light-transmitting substrate 400 which is a support, and a first An electrode 401 is formed. The first electrode 401 is formed in any one of embodiments 1 to 6. This corresponds to electrode 101. When light is extracted from the first electrode 401 side, the first electrode 4 01 is formed from a translucent material.

[0318] A pad 412 for supplying voltage to the second electrode 404 is formed on the substrate 400.

[0319] An EL layer 403 is formed on the first electrode 401. The EL layer 403 is the same as in Embodiment 1. The configuration of unit 103 in any one of the six, or unit 103(2), layer 104 This corresponds to a configuration that combines layer 105 and the intermediate layer 106. Please refer to the relevant description for further details.

[0320] The EL layer 403 is covered to form the second electrode 404. The second electrode 404 is the same as in Embodiment 1. It corresponds to electrode 102 in any one of the six. The light is extracted from the first electrode 401 side. In this case, the second electrode 404 is formed of a material with high reflectivity. Voltage is supplied by connecting to pad 412.

[0321] The above describes a light-emitting device having a first electrode 401, an EL layer 403, and a second electrode 404. The lighting device shown in this embodiment has a light-emitting device with high luminous efficiency. Since it is a chair, the lighting device in this embodiment is a lighting device with low power consumption. It is possible.

[0322] The substrate 400 on which the light-emitting device having the above configuration is formed and the sealing substrate 407 are sealed The lighting device is completed by fixing and sealing it using materials 405 and 406. Either 405 or 406 is acceptable. Also, the inner sealant 406 (Figure 8 (B) (Not shown) A desiccant can also be mixed in, which allows it to absorb moisture. This leads to improved reliability.

[0323] Furthermore, the pad 412 and a portion of the first electrode 401 are extended outside the sealing materials 405 and 406. By providing it, it can be used as an external input terminal. Also, a converter can be placed on top of it. An IC chip 420 or similar, which incorporates such features, may also be provided.

[0324] As described above, the lighting device described in this embodiment has an EL element which is one of any one of embodiments 1 to 6 By using the described light-emitting device, it is possible to create a lighting device with low power consumption.

[0325] (Embodiment 9) In this embodiment, the light-emitting device described in any one of Embodiments 1 to 6 is used as a part thereof. Examples of electronic devices to be included will be described. A light-emitting device according to any one of Embodiments 1 to 6 The chair is a light-emitting device with good luminous efficiency and low power consumption. As a result, this implementation The electronic device described in the form can be an electronic device having a light-emitting part with low power consumption. That is the case.

[0326] Examples of electronic devices to which the above-mentioned light-emitting device is applied include television equipment (televisions, and (Also called a television receiver), monitors for computers, digital cameras, digital cameras Digital video cameras, digital photo frames, mobile phones (both mobile phones and mobile phone devices) (Examples include) portable game consoles, personal digital assistants, audio playback devices, and large game machines such as pachinko machines. These are some examples. Specific examples of these electronic devices are shown below.

[0327] Figure 9(A) shows an example of a television system. The television system has a housing 710 The display unit 7103 is incorporated into part 1. Also, the housing is connected by the stand 7105. This shows the configuration supporting 7101. The display unit 7103 can display video. The display unit 7103 is capable of using the light-emitting device described in any one of embodiments 1 to 6. It is arranged in a matrix.

[0328] The television equipment is operated using the control switches on the housing 7101 or a separate remote control. This can be done using the control unit 7110. The remote control unit 7110 has an operation key 71 09 allows you to operate the channel or volume, and the information is displayed on the display unit 7103. The video can be controlled. Furthermore, the remote control unit 7110 can be controlled by the remote control unit. A display unit 7107 may be provided to display the information output from 7110.

[0329] The television system shall consist of a receiver or modem, etc. It can receive regular television broadcasts, and also via wired or wireless connection through a modem. By connecting to a communication network, communication can be one-way (sender to receiver) or two-way (sender to receiver). It is also possible to communicate information between believers and recipients, or between recipients themselves.

[0330] Figure 9(B) shows a computer, consisting of the main unit 7201, the casing 7202, the display unit 7203, and keys. Includes board 7204, external connection port 7205, pointing device 7206, etc. Furthermore, this computer uses the light-emitting device described in any one of Embodiments 1 to 6. It is manufactured by arranging them in a trix pattern and using them in the display unit 7203. Figure 9(B) The computer may take the form shown in Figure 9(C). The computer in Figure 9(C) is a keyboard. - Board 7204, instead of pointing device 7206, second display unit 7210 It is provided. The second display unit 7210 is a touch panel type, and the second display unit 7 Input is performed by operating the input display shown on 210 with a finger or a dedicated pen. It is possible to do so. In addition, the second display unit 7210 displays not only input information but also other images. It is also possible to display it. Furthermore, the display unit 7203 may also be a touch panel. Because the screen is connected by a hinge, it can get scratched when stored or transported. This also prevents problems such as damage from occurring.

[0331] Figure 9(D) shows an example of a mobile terminal. The mobile phone is incorporated into the housing 7401. In addition to the display unit 7402, there are operation buttons 7403, an external connection port 7404, and a speaker 740 5. It is equipped with a microphone 7406, etc. Note that the mobile phone is one of the embodiments 1 to 6 The display unit 7402 is made by arranging any one of the light-emitting devices described in one of the above in a matrix. It is.

[0332] The mobile terminal shown in Figure 9(D) allows users to input information by touching the display unit 7402 with their fingers or other objects. It can also be configured to allow for making phone calls or composing emails. Operations such as this can be performed by touching the display unit 7402 with a finger or the like.

[0333] The display unit 7402 has three main modes. The first is a display that primarily displays images. The first mode is display mode, the second is input mode which is mainly for inputting information such as characters. The third is display mode. This is a display + input mode, which is a combination of two modes: display mode and input mode.

[0334] For example, when making a phone call or composing an email, the display unit 7402 is used for text input. In this case, the primary text input mode should be used, and you should perform the input operation for the characters displayed on the screen. It is preferable to display a keyboard or number buttons on most of the screen of the display unit 7402. It seems so.

[0335] Furthermore, the mobile device has sensors inside that detect tilt, such as a gyroscope and an accelerometer. By installing the device, the orientation of the mobile terminal (portrait or landscape) is determined, and the screen display of the display unit 7402 is displayed accordingly. The display can be set to switch automatically.

[0336] Furthermore, screen modes can be switched by touching the display unit 7402 or by operating the housing 7401. This is done by operating button 7403. Also, the type of image displayed on display unit 7402 Therefore, it is also possible to switch between them. For example, the image signal displayed on the display unit is a video signal. Switch to display mode if it's data, or to input mode if it's text data.

[0337] Furthermore, in input mode, the signal detected by the optical sensor of the display unit 7402 is detected and displayed If there is no input via touch operation on unit 7402 for a certain period of time, the screen mode will be changed to input mode. You may also control the system to switch from that display mode to a different mode.

[0338] The display unit 7402 can also function as an image sensor. For example, the display unit 74 By touching device 02 with the palm or finger, the user can authenticate their identity by capturing images of their palm print, fingerprints, etc. Furthermore, the display unit may have a backlight that emits near-infrared light or a sensing device that emits near-infrared light. Using a suitable light source, it is also possible to image finger veins, palmar veins, and other veins.

[0339] Figure 10(A) is a schematic diagram showing an example of a cleaning robot.

[0340] The cleaning robot 5100 has a display 5101 located on the top and multiple displays located on the sides. It has several cameras 5102, brushes 5103, and operation buttons 5104. However, the underside of the 5100 cleaning robot is equipped with wheels, a suction port, etc. The 5100 robot also includes an infrared sensor, ultrasonic sensor, acceleration sensor, and piezo sensor. It is equipped with various sensors such as optical sensors and gyro sensors. Also, the cleaning robot 5 Unit 100 is equipped with wireless communication means.

[0341] The cleaning robot 5100 moves autonomously, detects the dirt 5120, and uses the suction port located on its underside to... It can then vacuum up the dust.

[0342] Furthermore, the cleaning robot 5100 analyzes images captured by the camera 5102, and detects walls, furniture, or It can determine the presence or absence of obstacles such as steps. Furthermore, image analysis can detect wiring and other obstacles. If an object that may become entangled in brush 5103 is detected, the rotation of brush 5103 will be stopped. can.

[0343] The display 5101 can show the battery level, the amount of dust collected, etc. Yes, it's possible. You can also display the path taken by the cleaning robot 5100 on the display 5101. Furthermore, the display 5101 is a touch panel, and the operation buttons 5104 are on the display. It may also be provided in I-5101.

[0344] The cleaning robot 5100 can communicate with portable electronic devices 5140 such as smartphones. Yes, it is possible. Images captured by camera 5102 can be displayed on the portable electronic device 5140. Therefore, the owner of the 5100 cleaning robot can know what's happening in the room even when they're away from home. It is possible to display the information on the display 5101 on portable electronic devices such as smartphones. You can also check it at 5140.

[0345] A light-emitting device according to one aspect of the present invention can be used in a display 5101.

[0346] The robot 2100 shown in Figure 10(B) consists of a computing unit 2110, an illuminance sensor 2101, and a microcontroller. Crossphone 2102, upper camera 2103, speaker 2104, display 2105, It is equipped with a lower camera 2106, an obstacle sensor 2107, and a movement mechanism 2108.

[0347] Microphone 2102 has the function of detecting the user's voice and ambient sounds, etc. Speaker 2104 has the function of emitting sound. Robot 2100 has a microphone Using the 2102 and speaker 2104, communication with the user is possible. It is possible.

[0348] The display 2105 has the function of displaying various information. The robot 2100 is The user can display the desired information on the display 2105. The 2105 may have a touch panel. Also, the display 2105 is removable. It can be any information terminal capable of charging, and by installing it in a fixed position on the robot 2100, And it enables the transfer of data.

[0349] The upper camera 2103 and lower camera 2106 are used to image the area around the robot 2100. It has the ability to detect obstacles. Furthermore, the obstacle sensor 2107 uses the moving mechanism 2108 to detect robot 210 Robot 21 can detect the presence or absence of obstacles in the direction of travel as it moves forward. 00 uses the upper camera 2103, the lower camera 2106 and the obstacle sensor 2107 The light-emitting device according to one aspect of the present invention can recognize its surroundings and move safely. It can be used in display 2105.

[0350] Figure 10(C) shows an example of a goggle-type display. For example, the components include the casing 5000, the display unit 5001, the speaker 5003, and the LED lamp 5004. , connection terminal 5006, sensor 5007 (force, displacement, position, velocity, acceleration, angular velocity, rotational speed) Distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, electric current, voltage, power, (including functions for measuring radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation), It includes an ICrophone 5008, a display unit 5002, a support unit 5012, an earphone 5013, etc. .

[0351] The light-emitting device according to one aspect of the present invention can be used in the display unit 5001 and the display unit 5002. .

[0352] Figure 11 shows a light-emitting device according to any one of Embodiments 1 to 6, which is an electric light-emitting device. This is an example of its use in a desk lamp. The desk lamp shown in Figure 11 consists of a housing 2001 and a light source 20 The device has 02, and as the light source 2002, the lighting device described in Embodiment 8 may be used.

[0353] Figure 12 shows a light-emitting device according to any one of Embodiments 1 to 6, in an indoor lighting device 3 This is an example of use as 001. The light-emitting device described in any one of Embodiments 1 to 6 Because it is a light-emitting device with high luminous efficiency, it can be used as a lighting device with low power consumption. Furthermore, the light-emitting device described in any one of Embodiments 1 to 6 can be made to have a large area. Therefore, it can be used as a large-area lighting device. Also, any of Embodiments 1 to 6 The light-emitting device described in (1) is thin and can therefore be used as a thinned lighting device. It becomes possible.

[0354] The light-emitting device described in any one of Embodiments 1 to 6 is used on the windshield of an automobile or It can also be mounted on the dashboard. Figure 13 shows one of the embodiments 1 to 6. One embodiment of using the light-emitting device described above on the windshield or dashboard of an automobile. The display areas 5200 to 5203 are described in any one of Embodiments 1 to 6. This is a display area provided using a light-emitting device.

[0355] Display area 5200 and display area 5201 are in an embodiment provided on the windshield of an automobile. This is a display device equipped with a light-emitting device as described in any one of 1 to 6. Embodiment 1 The light-emitting device described in any one of the above to 6 comprises a first electrode and a second electrode made of a light-transmitting material. By creating it at the pole, the opposite side becomes transparent, creating a so-called see-through display device. This can be done. If it is a see-through display, it can be installed on the windshield of a car. Even so, it can be installed without obstructing the view. If transistors are to be installed, organic transistors or oxide semiconductors made of organic semiconductor materials may be used. It is preferable to use transistors that are transparent to light, such as transistors that use conductors.

[0356] The display area 5202 is provided in the pillar portion and is described in any one of embodiments 1 to 6. This is a display device equipped with an optical device. The display area 5202 is an imaging device provided on the vehicle body. By displaying images from the steps, the view obstructed by the pillars can be compensated for. Similarly, the display area 5203 located on the dashboard is obstructed by the vehicle body. The field of view is obscured by displaying images from an imaging device installed on the outside of the vehicle, thereby reducing blind spots. This can supplement the unseen parts and enhance safety. Therefore, safety checks can be performed more naturally and without any sense of unease.

[0357] Display area 5203 also displays navigation information, speedometer, tachometer, odometer, fuel gauge, and gear. By displaying the status, air conditioning settings, and other information, various other details can be provided. The display items or layout can be changed as needed to suit the user's preferences. Furthermore, this information can also be provided in display areas 5200 to 5202. Furthermore, display areas 5200 to 5203 can also be used as lighting devices. .

[0358] Figures 14(A) to 14(C) also show a foldable portable information terminal 9310. Figure 14(A) shows the portable information terminal 9310 in its unfolded state. Figure 14(B) shows the unfolded state. A portable information terminal 9310 in a state in between, either in a normal state or a folded state, and changing to the other state. Figure 14(C) shows the folded state of the personal digital assistant (PDA). The 9310 offers excellent portability when folded, and a seamless, wide design when unfolded. The display area provides excellent readability.

[0359] The display panel 9311 is supported by three housings 9315 connected by hinges 9313. The display panel 9311 is a touch panel equipped with a touch sensor (input device). It may also be an input / output device. In addition, the display panel 9311 is connected via the hinge 9313. By bending the two housings 9315, the mobile information terminal 9310 is unfolded. It can be reversibly transformed from a folded state. A light-emitting device according to one aspect of the present invention It can be used with the display panel 9311.

[0360] The configuration shown in this embodiment is achieved by appropriately combining the configurations shown in Embodiments 1 to 6. They can be used together.

[0361] As described above, the light-emitting device equipped with the light-emitting device described in any one of Embodiments 1 to 6 is suitable Its range of applications is extremely wide, and this light-emitting device can be applied to electronic equipment in all fields. By using the light-emitting device described in any one of Embodiments 1 to 6, power consumption You can obtain small electronic devices.

[0362] This embodiment can be appropriately combined with other embodiments shown herein. . [Examples]

[0363] This embodiment describes the structure and manufacturing method of a light-emitting device 1 and a light-emitting device 2 according to one aspect of the present invention. The characteristics and other related information will be explained using Figures 15 to 29.

[0364] Figure 15 is a cross-sectional view illustrating the configuration of the fabricated light-emitting device.

[0365] Figure 16 illustrates the current density-luminance characteristics of the light-emitting device 1.

[0366] Figure 17 illustrates the luminance-current efficiency characteristics of the light-emitting device 1.

[0367] Figure 18 illustrates the voltage-luminance characteristics of the light-emitting device 1.

[0368] Figure 19 illustrates the voltage-current characteristics of the light-emitting device 1.

[0369] Figure 20 illustrates the luminance-external quantum efficiency characteristics of the light-emitting device 1. Assuming that the optical distribution characteristics of Vice are Lambertsian, the brightness and emission spectrum observed from the front The external quantum efficiency was calculated from this.

[0370] Figure 21 shows that the light-emitting device 1 emits 1000 cd / m² 2 Emission spectrum when emitted at this brightness This is a diagram explaining the concept.

[0371] Figure 22 illustrates the current density-luminance characteristics of the light-emitting device 2.

[0372] Figure 23 illustrates the luminance-current efficiency characteristics of the light-emitting device 2.

[0373] Figure 24 illustrates the voltage-luminance characteristics of the light-emitting device 2.

[0374] Figure 25 illustrates the voltage-current characteristics of the light-emitting device 2.

[0375] Figure 26 illustrates the luminance-external quantum efficiency characteristics of the light-emitting device 2. Assuming that the optical distribution characteristics of Vice are Lambertsian, the brightness and emission spectrum observed from the front The external quantum efficiency was calculated from this.

[0376] Figure 27 shows the light-emitting device 2 at 1000 cd / m². 2 Emission spectrum when emitted at this brightness This is a diagram explaining the concept.

[0377] Figure 28 shows 50 mA / cm². 2 Standard when light-emitting device 1 is made to emit light at a constant current density. This diagram illustrates the luminance-time variation characteristics. Note that the current is 50 mA / cm². 2 At a constant current density The normalized luminance-time variation characteristics when the comparative light-emitting device is activated are also shown.

[0378] Figure 29 shows 50 mA / cm². 2 Standard when the light-emitting device 2 is made to emit light at a constant current density. This diagram illustrates the luminance-time variation characteristics. Note that the current is 50 mA / cm².2 At a constant current density The normalized luminance-time variation characteristics when the comparative light-emitting device is activated are also shown.

[0379] <Light-emitting device 1> The light-emitting device 1 described in this embodiment has a first electrode 101 and a second electrode 102 The electrode has a layer 111, and the layer 111 is sandwiched between the first electrode 101 and the second electrode 102. It has a region that is made visible (see Figure 15). Layer 111 consists of a luminescent material D and a first material H. The material comprises material 1 and a second material H2. The light-emitting device 1 also emits light EL1.

[0380] The first material H1 comprises an anthracene skeleton and substituent R11, wherein substituent R11 is anthracene Bonded to the sen skeleton, substituent R11 contains a heteroaromatic ring. Furthermore, the second material H2 is ant It comprises a helical skeleton, substituents R21 and R22. Substituent R21 is an anthracene skeleton. The substituent R21 is bonded to the compound, and its ring structure contains an aromatic ring composed solely of carbon atoms. R22 is bonded to the anthracene skeleton, and substituent R22 is an aromatic compound whose ring structure consists only of carbon atoms. The molecule contains a ring, and substituent R22 has a different structure from substituent R21.

[0381] Configuration of Light-Emitting Device 1 Table 1 shows the configuration of the light-emitting device 1. Also, the materials used in the light-emitting device described in this embodiment are shown. The structural formula of the material is shown below.

[0382] [Table 1]

[0383] [ka]

[0384] 《Method for fabricating light-emitting device 1》 The light-emitting device 1 described in this embodiment was fabricated using a method comprising the following steps.

[0385] [Step 1] In the first step, the electrode 101 was formed on the substrate. Specifically, the target Using indium oxide-tin oxide (ITSO) containing silicon or silicon oxide, It was formed using the puttering method.

[0386] The electrode 101 has a thickness of 110 nm and a length of 4 mm. 2 It has an area of ​​(2mm x 2mm) .

[0387] Next, the substrate on which the electrode 101 is formed is washed with water, fired at 200°C for 1 hour, and then UV Ozone treatment was performed for 370 seconds. After that, 10 -4 Vacuum deposition with internal pressure reduced to approximately Pa The substrate is introduced into the apparatus, and vacuum firing is performed in the heating chamber of the vacuum deposition apparatus at 170°C for 30 minutes. The process was carried out. Afterwards, the substrate was allowed to cool for about 30 minutes.

[0388] [Step 2] In the second step, layer 104 was formed on electrode 101. Specifically, vacuum deposition was performed. 10 inside the device -4 After reducing the pressure to Pa, the material was co-deposited using the resistance heating method.

[0389] Layer 104 is composed of oFBiSF(2) and an electron acceptor material (abbreviation: OCHD-0 01) contains oFBiSF(2):OCHD-001=1:0.03 (by weight), 1 It has a thickness of 0 nm. Furthermore, OCHD-001 has acceptor properties.

[0390] [Step 3] In the third step, layer 112a is formed on layer 104, and layer 112b is formed on layer 112a It was formed on top of the above. Specifically, each material was deposited using the resistance heating method.

[0391] Layer 112a contains oFBiSF(2) and has a thickness of 90 nm. 2b is N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8- It contains an amine (abbreviation: BBABnf(8)) and has a thickness of 10 nm.

[0392] [Step 4] In the fourth step, layer 111 was formed on layer 112b. Specifically, resistance heating The material was co-deposited using the following method.

[0393] Layer 111 contains cgDBCzPA, αN-βNPAnth, and 3,10PCA2N bf(IV)-02, cgDBCzPA:αN-βNPAnth:3,10PCA2N It contains bf(IV)-02 in a ratio of 0.5:0.5:0.015 (by weight) and has a thickness of 20 nm. Prepare.

[0394] [Step 5] In the fifth step, layer 113a is formed on top of layer 111, and layer 113b is formed on top of layer 113a It was formed on top of the above. Specifically, the materials were deposited using the resistance heating method.

[0395] Layer 113a is 4-[3,5-bis(9H-carbazole-9-yl)phenyl] -2-phenyl-6-(1,1'-biphenyl-4-yl)pyrimidine (abbreviation: 6BP- It contains 4Cz2PPm) and has a thickness of 10 nm. In addition, layer 113b contains 2-[3-( 2,6-dimethyl-3-pyridinyl)-5-(9-phenantrenyl)phenyl]-4, 6-diphenyl-1,3,5-triazine (abbreviation: mPn-mDMePyPTzn) It contains Liq in the ratio mPn-mDMePyPTzn:Liq=1:1 (by weight), and 20n It has a thick profile.

[0396] [Step 6] In the sixth step, layer 105 was formed on layer 113b. Specifically, resistance heating The material was deposited using the following method.

[0397] Layer 105 contains Liq and has a thickness of 1 nm.

[0398] [Step 7] In the seventh step, electrode 102 was formed on layer 105. Specifically, resistance heating The material was deposited using the following method.

[0399] The electrode 102 contains aluminum (Al) and has a thickness of 200 nm.

[0400] Operating characteristics of the light-emitting device 1 The operating characteristics of the light-emitting device 1 were measured (see Figures 16 to 21). The measurements were performed at room temperature. .

[0401] Light-emitting device 1 has a brightness of 1000 cd / m². 2 Table 2 shows the main initial characteristics when the light is emitted at a certain level. This will be shown.

[0402] [Table 2]

[0403] The light-emitting device 1 was found to exhibit good characteristics. For example, 1000 cd / m² 2 The brilliance The voltage required to emit light at a certain degree was almost the same as that of the comparative light-emitting device, but the external quantum efficiency was It showed improvement over the comparative light-emitting device. Also, 50mA / cm² 2 At a constant current density, light emission When Vice 1 was illuminated, the decrease in brightness was less compared to the comparative light-emitting device (Figure 2). (See 8).

[0404] <Light-emitting device 2> Table 3 shows the configuration of the light-emitting device 2. The light-emitting device 2 fabricated in this embodiment has layers The difference between 111 and αN-βNPAnth is that 2αN-αNPhA is included in the light-emitting device 1 This is different. Here, we will explain the differences in detail and the parts that use a similar structure. Therefore, we will refer to the explanation above.

[0405] [Table 3]

[0406] 《Method for fabricating light-emitting device 2》 Light-emitting device 2 was fabricated using a method comprising the following steps.

[0407] The method for fabricating the light-emitting device 2 involves forming layer 111 using αN-βNPAnt The difference from the fabrication method of light-emitting device 1 is that 2αN-αNPhA is used instead of h. Here, we will explain the differences in detail, and for parts where similar methods were used, see above. I will use the explanation.

[0408] [Step 4] In the fourth step, layer 111 was formed on layer 112b. Specifically, resistance heating The material was co-deposited using the following method.

[0409] Layer 111 contains cgDBCzPA, 2αN-αNPhA, and 3,10PCA2Nb f(IV)-02 is cgDBCzPA:2αN-αNPhA:3,10PCA2Nbf (IV)-02 = 0.5:0.5:0.015 (by weight ratio), with a thickness of 20 nm. ru.

[0410] Operating characteristics of the light-emitting device 2 The operating characteristics of the light-emitting device 2 were measured (see Figures 22 to 27). The measurements were performed at room temperature. .

[0411] Table 2 shows the main initial characteristics of the light-emitting device 2.

[0412] The light-emitting device 2 was found to exhibit good characteristics. For example, 1000 cd / m² 2 The brilliance The voltage required to emit light at a certain degree was almost the same as that of the comparative light-emitting device, but the external quantum efficiency was It showed improvement over the comparative light-emitting device. Also, 50mA / cm² 2 At a constant current density, light emission When Vice 2 was illuminated, the decrease in brightness was less compared to the comparative light-emitting device (Figure 2). See 9).

[0413] (Reference example 1) Table 4 shows the configuration of the comparative light-emitting device.

[0414] The comparative light-emitting device described in this embodiment has layer 111 made of cgDBCzPA and 3 The fact that it contains 10PCA2Nbf(IV)-02 and does not use the second material H2 is that it emits light. Device 1 and light-emitting device 2 are different. The differences are explained in detail here. For parts using a similar configuration, refer to the explanation above.

[0415] [Table 4]

[0416] 《Method for fabricating comparative light-emitting devices》 A comparative light-emitting device was fabricated using a method comprising the following steps.

[0417] Furthermore, the method for fabricating the comparative light-emitting device involves forming layer 111 in the step of cgDBCzPA And the fact that only 3,10PCA2Nbf(IV)-02 is used is that light-emitting device 1 or This differs from the fabrication method of light-emitting device 2. Here, we will explain the differences in detail. For the parts where the method described above was used, refer to the explanation above.

[0418] [Step 4] In the fourth step, layer 111 was formed on layer 112b. Specifically, resistance heating The material was co-deposited using the following method.

[0419] Layer 111 contains cgDBCzPA and 3,10PCA2Nbf(IV)-02. cgDBCzPA:3,10PCA2Nbf(IV)-02=1:0.015 (weight ratio) It contains and has a thickness of 20 nm.

[0420] Operating characteristics of comparative light-emitting devices The operating characteristics of the comparative light-emitting device were measured. The measurements were performed at room temperature.

[0421] Table 2 shows the main initial characteristics of the comparative light-emitting devices. [Examples]

[0422] This embodiment describes the structure and manufacturing method of light-emitting devices 3 and 4 according to one aspect of the present invention. The characteristics and other related information will be explained using Figures 15, 30 to 41.

[0423] Figure 30 illustrates the current density-luminance characteristics of light-emitting devices 3 and 4. ru.

[0424] Figure 31 illustrates the luminance-current efficiency characteristics of light-emitting devices 3 and 4. ru.

[0425] Figure 32 illustrates the voltage-luminance characteristics of light-emitting devices 3 and 4.

[0426] Figure 33 illustrates the voltage-current characteristics of light-emitting devices 3 and 4.

[0427] Figure 34 illustrates the luminance-external quantum efficiency characteristics of light-emitting devices 3 and 4. This is the result. Furthermore, assuming that the light distribution characteristics of the light-emitting device are Lambertsian, the observations made from the front were... The external quantum efficiency was calculated from the luminance and emission spectrum.

[0428] Figure 35 shows the light-emitting devices 3 and 4 at 1000 cd / m². 2 It emits light at this brightness. This is a diagram illustrating the emission spectrum at that time.

[0429] Figure 36 shows 50 mA / cm². 2 At a constant current density, light-emitting devices 3 and 4 are used. This diagram illustrates the normalized luminance-time variation characteristics when the light source is emitted. Note that the current is 50 mA / cm². 2 The normalized brightness-time variation characteristics when the comparison light-emitting device is made to emit light at a constant current density are also shown. show.

[0430] Figure 37 illustrates the light distribution characteristics of a light-emitting device that emits light under conditions that exhibit maximum external quantum efficiency. This is a diagram.

[0431] Figure 38 shows a current density of 50 mA / m³. 2 The light distribution characteristics of a light-emitting device that emits light under the conditions described above. A diagram for explanation.

[0432] Figure 39 shows a light-emitting device pulsed at a voltage corresponding to the condition that exhibits maximum external quantum efficiency. This diagram illustrates the change in luminescence intensity.

[0433] Figure 40 shows a current density of 50 mA / m³. 2 A pulse-driven light-emitting diode with a voltage corresponding to the conditions for achieving this state. This diagram illustrates the change in the luminescence intensity of the vise.

[0434] Figure 41 shows the relationship between the composition of the host material used in layer 111 and the corrected external quantum efficiency, and the host This diagram illustrates the relationship between material composition and the carrier balance factor γ.

[0435] <Light-emitting device 3 and light-emitting device 4> The light-emitting devices 3 and 4 fabricated in this embodiment have a first electrode 101 It has a second electrode 102 and a layer 111, and the layer 111 is made up of the first electrode 101 and the second It has a region sandwiched between the electrodes 102 (see Figure 15). The layer 111 is luminescent The material includes material D, a first material H1, and a second material H2. It also includes a light-emitting device 3 and light emission. Device 4 emits optical EL1.

[0436] The first material H1 comprises an anthracene skeleton and substituent R11, wherein substituent R11 is anthracene Bonded to the sen skeleton, substituent R11 contains a heteroaromatic ring. Furthermore, the second material H2 is ant It comprises a helical skeleton, substituents R21 and R22. Substituent R21 is an anthracene skeleton. The substituent R21 is bonded to the compound, and its ring structure contains an aromatic ring composed solely of carbon atoms. R22 is bonded to the anthracene skeleton, and substituent R22 is an aromatic compound whose ring structure consists only of carbon atoms. The molecule contains a ring, and substituent R22 has a different structure from substituent R21.

[0437] Configuration of Light-Emitting Device 3 and Light-Emitting Device 4 Table 5 shows the configurations of light-emitting devices 3 and 4. Furthermore, the light-emitting devices described in this embodiment... The structural formulas of the materials used in the optical device are shown below.

[0438] [Table 5]

[0439] [ka]

[0440] Method for fabricating light-emitting devices 3 and 4 Using a method comprising the following steps, the light-emitting device 3 and light-emitting device described in this embodiment are used. I made Vice 4.

[0441] [Step 1] In the first step, electrode 101 was formed. Specifically, silicon or similar material was applied to the target. Alternatively, indium oxide-tin oxide (ITSO) containing silicon oxide can be used for sputtering. It was formed by the ing method.

[0442] Electrode 101 contains ITSO and has a thickness of 70 nm and 4 mm 2 (2mm x 2mm) It has an area of ​​.

[0443] Next, the substrate on which the electrode 101 is formed is washed with water, fired at 200°C for 1 hour, and then UV Ozone treatment was performed for 370 seconds. After that, 10 -4 Vacuum deposition with internal pressure reduced to approximately Pa The substrate is introduced into the apparatus, and vacuum firing is performed in the heating chamber of the vacuum deposition apparatus at 170°C for 30 minutes. The process was carried out. Afterwards, the substrate was allowed to cool for about 30 minutes.

[0444] [Step 2] In the second step, a layer 104 was formed on the electrode 101. Specifically, a vacuum deposition process was performed. Place 10 -4 After reducing the pressure to Pa, the material was co-deposited using the resistance heating method.

[0445] Layer 104 is PCBBiF and OCHD-001, PCBBiF:OCHD-0 It contains 01 at a ratio of 1:0.03 (by weight) and has a thickness of 10 nm.

[0446] [Step 3] In the third step, layer 112a was formed on layer 104. Specifically, by resistance heating. The material was deposited using [a specific method / tool].

[0447] Layer 112a contains PCBBiF and has a thickness of 90 nm.

[0448] [Step 4] In the fourth step, layer 112b was formed on layer 112a. Specifically, resistance heating The material was deposited using the following method.

[0449] Layer 112b includes DBfBB1TP and has a thickness of 10 nm.

[0450] [Step 5] In the fifth step, layer 111 was formed on layer 112b. Specifically, by resistance heating. The material was co-deposited using [a specific method / tool].

[0451] Furthermore, layer 111 has H1, H2, and D in a ratio of H1:H2:D=x:y:0.015 (by weight). It contains ) and has a thickness of 20nm.

[0452] Specifically, layer 111 of the light-emitting device 3 is cgDBCzPA, αN-βNPAnth 3,10PCA2Nbf(IV)-02 is cgDBCzPA:αN-βNPAnt h:3,10PCA2Nbf(IV)-02=0.5:0.5:0.015 (weight ratio) include.

[0453] Furthermore, layer 111 of the light-emitting device 4 contains cgDBCzPA, αN-βNPAnth, and 3 ,10PCA2Nbf(IV)-02, cgDBCzPA:αN-βNPAnth:3 ,10PCA2Nbf(IV)-02 = 0.3:0.7:0.015 (by weight).

[0454] [Step 6] In the sixth step, layer 113a was formed on layer 111. Specifically, by resistance heating. The material was deposited using [a specific method / tool].

[0455] Furthermore, layer 113a is 6-(1,1'-biphenyl-3-yl)-4-[3,5-bis( 9H-carbazole-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP) It contains -4Cz2PPm) and has a thickness of 10nm.

[0456] [Step 7] In the seventh step, layer 113b was formed on layer 113a. Specifically, resistance heating The material was co-deposited using the following method.

[0457] Furthermore, layer 113b uses mPn-mDMePyPTzn and Liq to create mPn-mDMeP It contains yPTzn:Liq in a 1:1 (weight ratio) ratio and has a thickness of 20 nm.

[0458] [Step 8] In the eighth step, layer 105 was formed on layer 113b. Specifically, by resistance heating. The material was deposited using [a specific method / tool].

[0459] Layer 105 contains Liq and has a thickness of 1 nm.

[0460] [Step 9] In the ninth step, an electrode 102 was formed on layer 105. Specifically, by resistance heating. The material was deposited using [a specific method / tool].

[0461] The electrode 102 contains Al and has a thickness of 150 nm.

[0462] Operating characteristics of light-emitting device 3 and light-emitting device 4 The operating characteristics of light-emitting devices 3 and 4 were measured (see Figures 30 to 36). The measurements were taken at room temperature.

[0463] Light-emitting devices 3 and 4 are set to a brightness of 1000 cd / m². 2 When illuminated to a certain degree The main initial characteristics are shown in Table 6.

[0464] [Table 6]

[0465] Light-emitting devices 3 and 4 were found to exhibit good characteristics. In particular, the driving Focusing on the fluctuations in external quantum efficiency observed in the brightness region lower than condition 1 (low brightness), The light-emitting device 3 not only has high external quantum efficiency but also exhibits small fluctuations (see Figure 34). By appropriately mixing material H1 and the second material H2 and using them in layer 111, external quantum We were able to suppress the dependence of efficiency on brightness.

[0466] External quantum efficiency of light-emitting device 3 and light-emitting device 4 The external quantum efficiencies of light-emitting devices 3 and 4 were investigated in detail. Conventional methods include: Assuming an ideal Lambertsian light distribution, the brightness observed in front of the light-emitting device and The external quantum efficiency is calculated from the spectrum. Here, the light distribution characteristics of the light-emitting device are measured. Then, calculate the difference from the ideal Lambertsian light distribution (Lambertsian ratio), and the Lambertsian ratio The exact external quantum efficiency was calculated by taking this into account. Note that the Lambertsian ratio is the ideal Lambertsian ratio. - The curve drawn by the measured light distribution characteristics relative to the area of ​​the region enclosed by the curve drawn by the cyan light distribution. This is the ratio of the areas of the enclosed regions.

[0467] Furthermore, in order to examine the external quantum efficiency in detail, the emission data was taken at a predetermined angle relative to the spectroradiometer. By tilting a vise and measuring the light emission intensity at each angle, the light distribution characteristics are determined. I investigated. Specifically, I defined the position where the spectroradiometer and the light-emitting device are directly facing each other as 0°, and -80° or Brightness was measured in 10° increments up to +80°, and the luminescence intensity observed at the direct-facing position was used. Then, each was standardized, and the light distribution characteristics were determined. Note that each light-emitting device has a maximum Figure 37 shows the optical distribution characteristics of a light-emitting device driven under the conditions (driving condition 1) that demonstrate the external quantum efficiency. The current density is 50 mA / m³. 2 The light-emitting device driven under the conditions (driving condition 2) The optical properties are shown in Figure 38. The measurements were performed at room temperature.

[0468] Light-emitting device 3, light-emitting device 4, comparison light-emitting device 2 and comparison light-emitting device 3 are The misalignment also results in a light distribution characteristic that emits stronger light in the forward direction compared to the ideal Lambertsian distribution. The Lambertian ratio was less than 1.

[0469] Furthermore, the external quantum efficiency changes depending on the driving conditions of the light-emitting device. Here, the driving conditions The external quantum efficiency was compared under two driving conditions: driving condition 1 and driving condition 2. The results for the first condition are shown in Table 7, and the results for driving condition 2 are shown in Table 8.

[0470] For example, under driving condition 1, the ratio of the corrected external quantum efficiency of the comparative light-emitting device 2. The values ​​were 1.12 for light-emitting device 3 and 1.13 for light-emitting device 4. Also, driving condition 2 In this case, the light-emitting device 3 was 1.08 and the light-emitting device 4 was 1.07. Light-emitting device 3 and light-emitting device 4 are compared with comparison light-emitting device 2 and comparison light-emitting device It was found to exhibit good characteristics of 3 or higher.

[0471] [Table 7]

[0472] [Table 8]

[0473] Carrier balance factor γ of light-emitting device 3 and light-emitting device 4 The carrier balance factor γ of light-emitting devices 3 and 4 was investigated.

[0474] External quantum efficiency EQE is calculated by the singlet exciton generation rate α, the quantum yield φ of the light-emitting material, and the light acquisition rate. It is the product of the departure efficiency χ and the carrier balance factor γ.

[0475]

number

[0476] The quantum yield φ of the light-emitting material has been measured to be approximately 0.9. Based on the results of actual measurements of the molecular orientation of the material, the light extraction efficiency χ is lower when the molecular orientation is random. It has been found that the efficiency increases by about 1.23 times. Generally, the light extraction efficiency is 25% or Based on the assumption that the probability is around 30%, we assumed that the product of φ and χ is 0.3.

[0477] The generation rate α of singlet excitons can be determined from the following equation. Note that in the following equation, x is a triplet exciton. - This is the triplet annihilation yield (TTA ratio).

[0478]

number

[0479] Due to the recombination of holes and electrons within the EL device, singlet excitons are generated with a 25% probability, Multiplet excitons are generally produced with a 75% probability. Also, some of the triplet excitons are converted into other triplet excitons. Interacts with the term exciton and causes triplet-triplet annihilation (TTA:Triplet-Triplet -Annihilation) can be used to upconvert to singlet excitons. It is known.

[0480] The presence of singlet excitons generated via long-lived triplet excitons was confirmed by the observation of delayed fluorescence. This can be confirmed. Furthermore, by fitting the following equation to the observed decay curve of delayed fluorescence, By extrapolating the fitted curve to time 0, the total emission obtained from the light-emitting device can be calculated. This allows us to determine the proportion of the delayed fluorescence component in the light. Note that in the following equation, L is normalized. The luminescence intensity is shown, and t represents the elapsed time since the drive was stopped.

[0481]

number

[0482] Furthermore, delayed fluorescence was measured using a picosecond fluorescence lifetime system (manufactured by Hamamatsu Photonics). Specifically, a predetermined voltage corresponding to driving condition 1 or a predetermined voltage corresponding to driving condition 2 The voltage was applied to the light-emitting device. Additionally, a rectangular pulse was applied, and the voltage was controlled for a period of 100 μsec. The predetermined voltage was maintained, and the decay of delayed fluorescence was observed for a period of 50 μsec. During the period in which the attenuation was observed, a negative bias of -5V was applied. The measurement was performed at 10Hz. The data was accumulated repeatedly using the cycle. The pulse drive was performed with a predetermined voltage corresponding to driving condition 1. Figure 39 shows the light emission intensity of the light-emitting device, and the pulsed drive is performed at a predetermined voltage corresponding to driving condition 2. Figure 40 shows the light emission intensity of the moving light-emitting device.

[0483] The carrier balance factor γ changes depending on the driving conditions of the light-emitting device. Here, The conditions under which each light-emitting device exhibits maximum external quantum efficiency (driving condition 1), and the current density is 50 mA / m 2 In the two driving conditions of the conditions for which this occurs (driving condition 2), the carrier balance factor We compared γ (see Figure 41).

[0484] Under driving condition 2, light-emitting devices 3 and 4 are compared to comparative light-emitting device 2. In all cases, the singlet exciton generation rate α was high. That is, in the case where only the first material H1 is used... Compared to the combined method, the efficiency of TTA can be increased. Also, the light-emitting device 3 and the light-emitting device Device S4 possessed a better carrier balance factor γ compared to comparative light-emitting device 3. By mixing the first material H1 and the second material H2 in layer 111, the carrier It was confirmed that A can be efficiently recombined. From the above, the first material H is added to layer 111. By using a mixture of material 1 and material 2 H2, the singlet exciton generation rate α can be increased. Furthermore, we were also able to increase the carrier balance factor γ in the region of high current density.

[0485] (Reference example 2) The configurations of comparative light-emitting device 2 and comparative light-emitting device 3 are explained using Table 5.

[0486] The comparative light-emitting device 2 and comparative light-emitting device 3 described in this embodiment are made of a second material The difference between this device and light-emitting devices 3 and 4 is that it does not use material H2. The differences will be explained in detail, and the parts that use a similar structure will be explained above. To use as a reference.

[0487] Method for fabricating comparative light-emitting device 2 and comparative light-emitting device 3 The comparison light-emitting device 2 and comparison light-emitting device 3 are obtained using a method comprising the following steps. I made it.

[0488] Furthermore, the method for fabricating the comparative light-emitting device 2 involves forming layer 111 using cgDBCzP The fact that only A and 3,10PCA2Nbf(IV)-02 are used is that the light-emitting device 3 and The method for fabricating the light-emitting device 4 is different. Also, the method for fabricating the comparative light-emitting device 3 is different for layer 1 In the step of forming 11, αN-βNPAnth and 3,10PCA2Nbf(IV) The difference from the fabrication method for light-emitting devices 3 and 4 is that only -02 is used. Here, we will explain the differences in detail, and for parts where similar methods were used, see above. We will use the explanation provided.

[0489] [Step 4] In the fourth step, layer 111 was formed on layer 112b. Specifically, resistance heating The material was co-deposited using the following method.

[0490] Furthermore, layer 111 of the comparative light-emitting device 2 is composed of cgDBCzPA and 3,10PCA2Nb f(IV)-02 is given by cgDBCzPA:3,10PCA2Nbf(IV)-02=1: It contains 0.015 (by weight) and has a thickness of 20 nm.

[0491] Furthermore, layer 111 of the comparative light-emitting device 3 contains αN-βNPAnth and 3,10PCA2 Nbf(IV)-02 is αN-βNPAnth:3,10PCA2Nbf(IV)-0 It contains 2 = 1:0.015 (by weight) and has a thickness of 20 nm.

[0492] Operating characteristics of comparative light-emitting device 2 and comparative light-emitting device 3 The operating characteristics of comparative light-emitting device 2 and comparative light-emitting device 3 were measured. The measurements were taken at room temperature. I went there.

[0493] The main initial characteristics of comparative light-emitting device 2 and comparative light-emitting device 3 are shown in Tables 6 to 8. [Explanation of Symbols]

[0494] 101 Electrode 102 electrode 103 units 104 layers 105 layers 106 Middle layer 106A layer 106B layer 111 layers 112 layers 112a layer 112b layer 113 layers 113a layer 113b layer 150 Light-Emitting Devices 400 circuit boards 401 Electrode 403 EL layer 404 Electrode 405 sealant 406 Sealant 407 Sealing substrate 412 pads 420 IC chips 601 Source Line Drive Circuit 602 pixel section 603 Gate wire drive circuit 604 Sealing substrate 605 Sealant 607 Space 608 Wiring 610 element substrate 611 Switching FET 612 Current-Controlled FET 613 Electrode 614 Insulators 616 EL layer 617 Electrode 618 Light-emitting devices 623 FET 700 light-emitting panels 951 circuit board 952 Electrode 953 Insulating layer 954 Partition layer 955 EL layer 956 Electrode 1001 circuit board 1002 Underlying insulating film 1003 Gate Insulator 10:06 Guard Station 1007 🙏 1008 Gate 1020 Interlayer insulating film 1021 Interlayer insulating film 1022 Electrode 1024B Electrode 1024G electrode 1024R electrode 1024W electrode 1025 Bulkhead 1028 EL layer 1029 Electrode 1031 Sealing substrate 1032 Sealant 1033 Base material 1034B Colored layer 1034G colored layer 1034R colored layer 1035 Black Matrix 1036 Overcoat layer 1037 Interlayer insulating film 1040 pixel section 1041 Drive circuit section 1042 Peripheral area 2001 cabinet 2002 light source 2100 Robots 2101 Illuminance Sensor 2102 Microphone 2103 Top Camera 2104 Speaker 2105 Display 2106 Lower Camera 2107 Obstacle Sensor 2108 Moving mechanism 2110 Arithmetic equipment 3001 Lighting device 5000 cabinets 5001 Display section 5002 Display section 5003 Speaker 5004 LED Lamp 5006 Connection terminal 5007 Sensor 5008 Microphone 5012 Support part 5013 Earphones 5100 Cleaning Robot 5101 Display 5102 Camera 5103 Brush 5104 Operation Buttons 5120 Garbage 5140 Portable electronic devices 5200 display area 5201 Display area 5202 Display area 5203 Display area 7101 enclosure 7103 Display section 7105 Stand 7107 Display section 7109 Operation Keys 7110 Remote Control Unit 7201 Main Unit 7202 enclosure 7203 Display section 7204 Keyboard 7205 External connection port 7206 Pointing device 7210 Display section 7401 enclosure 7402 Display section 7403 Operation Buttons 7404 External connection port 7405 Speaker 7406 Microphone 9310 Mobile Information Terminal 9311 Display Panel 9313 Hinge 9315 enclosure

Claims

1. It comprises a first electrode, a second electrode, a first layer, and a second layer. The first layer is located between the first electrode and the second layer. The second layer is located between the first layer and the second electrode. The first layer is a layer in which a luminescent material, a first material, and a second material are mixed. The first material comprises a first anthracene skeleton and a first substituent including a heteroaromatic ring, The heteroaromatic ring is bonded to the 9th or 10th position of the first anthracene skeleton via an aromatic ring, or is directly bonded to the 9th or 10th position of the first anthracene skeleton. The 1st, 4th, 5th, and 8th positions of the first anthracene skeleton are unsubstituted. The second material comprises a second anthracene skeleton, a second substituent having a first aromatic ring whose ring structure is composed of carbon, and a third substituent having a second aromatic ring whose ring structure is composed of carbon, and does not contain a heterocyclic structure. The first aromatic ring is directly bonded to the second anthracene skeleton, The second aromatic ring is directly bonded to the second anthracene skeleton, The third substituent has a different structure from the second substituent. The second layer has a third material, The third material is a light-emitting device having a third anthracene skeleton.

2. In claim 1, The first substituent comprises a carbazole skeleton in the light-emitting device.

3. In claim 1 or claim 2, The first substituent comprises a dibenzo[c,g]carbazole skeleton and can be represented by the following general formula (R11), and is a light-emitting device. 【Chemistry 1】 (However, in the above general formula (R11), R １１１ ~R １２２ Each of these independently represents one of the following: hydrogen, a C1-C6 alkyl group, a C3-C6 cyclic hydrocarbon group, a C1-C6 alkoxy group, a cyano group, a halogen, a C1-C6 haloalkyl group, or a substituted or unsubstituted C6-C60 aromatic hydrocarbon group.

4. In any one of claims 1 to 3, A light-emitting device in which at least one of the second substituent or the third substituent includes a naphthalene ring.

5. In any one of claims 1 to 3, A light-emitting device in which both the second substituent and the third substituent contain a naphthalene ring.

6. In any one of claims 1 to 5, The first material is a light-emitting device that can be represented by the following general formula (H11). 【Chemistry 2】 (provided that in the above general formula (H11), R １０１ , R １０４ , R １０５ and R １０８ are each hydrogen, and R １０２ , R １０３ , R １０６ , R １０７ , R １０９ to R １２９ each independently represent any one selected from the group consisting of hydrogen, an alkyl group having 1 to 6 carbon atoms, a cyclic hydrocarbon group having 3 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyano group, halogen, a haloalkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 carbon atoms.)

7. In any one of claims 1 to 5, The first material is a light-emitting device, which is represented by the following structural formula (H12), 7-[4-(10-phenyl-9-antryl)phenyl]-7H-dibenzo[c,g]carbazole. 【Transformation 3】

8. In any one of claims 1 to 7, The second material is a light-emitting device having lower electron transport properties than the first material.

9. In any one of claims 1 to 8, The second material is a light-emitting device that can be represented by the following general formula (H21). 【Chemistry 4】 (However, in the above general formula (H21), R ２０２ R is a substituent containing a hydrogen atom or an aromatic ring whose ring structure is composed of carbon atoms. ２１０ R is a substituent that includes an aromatic ring whose ring structure is composed of carbon atoms. ２０２ or R ２１０ At least one of them contains a naphthalene ring, R ２０１ , R ２０３ ~R ２０９ and R ２１１ ~R ２１８ Each of these independently represents one of the following: hydrogen, a C1-C6 alkyl group, a C3-C6 cyclic hydrocarbon group, a C1-C6 alkoxy group, a cyano group, a halogen, a C1-C6 haloalkyl group, or a substituted or unsubstituted C6-C60 aromatic hydrocarbon group.

10. In any one of claims 1 to 9, The second material is a light-emitting device selected from 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene, shown by the following structural formula (H22), and 2,9-di(1-naphthyl)-10-phenylanthracene, shown by the following structural formula (H23). 【Transformation 5】

11. In any one of claims 1 to 10, The aforementioned light-emitting material is a light-emitting device that emits blue fluorescence.

12. In claim 11, A light-emitting device wherein the light-emitting material is an aromatic diamine or a heteroaromatic diamine.

13. In any one of claims 1 to 12, The third material is a light-emitting device having the third anthracene skeleton and a nitrogen-containing five-membered ring skeleton.

14. In any one of claims 1 to 12, The third material is a light-emitting device having the third anthracene skeleton and a nitrogen-containing six-membered ring skeleton.

15. A light-emitting device having a light-emitting device according to any one of claims 1 to 14 and a transistor.

16. An electronic device comprising the light-emitting device according to claim 15, and a sensor, an operation button, a speaker, or a microphone.

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