Thin film deposition apparatus

Abstract

A substrate processing apparatus (100) comprising: a reaction chamber (120) for accommodating a plurality of substrates (130) arranged with their faces facing each other; a fluid distributor (600) for establishing a laminar flow of fluid that propagates from an inlet to the reaction chamber, through the reaction chamber, and between the plurality of substrates; and a vertically movable substrate rotation system (500) configured for moving the substrates in a direction perpendicular to the substrate surface between the loading / unloading state and the processing state, and for rotating the substrates within the reaction chamber during the processing state; It is equipped with.

Description

Technical Field

[0001] The disclosure of the present application (hereinafter referred to as the present disclosure) generally relates to substrate processing apparatuses and related methods. In particular, but not limited thereto, it relates to the loading and processing of batches (bundles, groups) of substrates. Background

[0002] Note that this section describes useful background information, but it is not admitted that the technology described herein represents the state of the art.

[0003] Substrate processing methods can be used, among other things, to deposit thin film coatings onto substrates from the gas phase. For example, atomic layer deposition (ALD) is a widely used technique for preparing thin films. ALD is based on performing a plurality of self-saturating surface reactions alternately on a substrate. Specifically, a plurality of different reactants (precursors) supplied as chemical compounds or elements are sequentially pulsed into a reaction space containing the substrate using a non-reactive inert gas carrier (depending on the implementation form). After the deposition of the reactants, usually, the substrate is purged with an inert gas. The cycle of precursors and purge is repeated the number of times necessary to obtain a film of a predetermined thickness.

[0004] The processing conditions in the reaction chamber of a substrate processing apparatus should be as uniform as possible throughout the reaction chamber in order to ensure high-quality and uniform substrate processing. Non-uniform processing conditions may also lead to an undesired increase in the amount of resources (precursors) used and the processing time. However, in batch processing where a plurality of substrates are processed simultaneously in the same reaction chamber, it is difficult to provide homogeneous processing conditions for each substrate. It is desirable to ensure a stable and uniform precursor supply and gas flow to the entire area of each substrate, regardless of where each substrate is located in the reaction chamber.

[0005] There is also a continuing need for improvements in the overall design and operating methods of substrate processing apparatuses, or in the design of various components of the apparatus such as reaction chambers and substrate holders. Summary

[0006] This disclosure aims to improve the operation of a substrate processing apparatus, improve a specific part of a substrate processing apparatus, or at least provide an alternative to existing technology.

[0007] Specific embodiments of this disclosure aim to improve the uniform deposition of precursors on substrate surfaces, particularly during batch processing of substrates. In batch processing, multiple substrates are simultaneously present in a reaction chamber for processing. Specific embodiments achieve a uniform coating that is as similar as possible to all substrates in a batch by highly homogenizing the concentration and flow of the precursor near and across the surface of all substrates in the reaction chamber.

[0008] The attached claims define the scope of protection. Any examples or technical descriptions of apparatus, products, and / or methods in this specification and / or drawings that are not covered by the claims are presented not as embodiments of the invention, but as background art or examples that are helpful to understanding the invention.

[0009] According to a first exemplary aspect, the following substrate processing apparatus is provided. This apparatus is A reaction chamber in which multiple substrates are arranged and housed with their (flat) surfaces facing each other; A fluid distributor that establishes a laminar flow of fluid that propagates from the inlet to the reaction chamber, through the reaction chamber, and between the multiple substrates; A vertically adjustable substrate rotation system is configured to move the plurality of substrates in a direction perpendicular to the substrate surface between the loading / unloading state and the processing state, and to rotate the plurality of substrates within the reaction chamber in the processing state; It is equipped with.

[0010] In some embodiments, the reaction chamber is configured to house the plurality of substrates oriented horizontally in a vertical stack supported by a substrate holder.

[0011] In some embodiments, the fluid distributor is configured to diffuse the fluid flow that enters from the inlet across the width of the reaction chamber (or the entire width of the reaction chamber) before the fluid enters the reaction chamber.

[0012] In some embodiments, the substrate processing apparatus has a substrate (at least partially) located inside the reaction chamber in the processing state, and a substrate outside the reaction chamber in the loading / unloading state.

[0013] Depending on the embodiment, the substrate processing apparatus is configured to process more than 15 substrates, or 25 or more substrates (preferably up to a maximum of 30) simultaneously in the reaction chamber.

[0014] In some embodiments, the liquid distributor comprises two opposing diffusion sections configured to supply the fluid flow that will meet in the subsequent transition region (or the reaction chamber inlet).

[0015] Depending on the embodiment, the substrate processing apparatus enables the fluid flow that meets in the transition region to be redirected, preferably by substantially 90 degrees, toward the reaction chamber as a mixed flow.

[0016] In some embodiments, the fluid flow within each of the two opposing diffusion sections is substantially two-dimensional, in that it lacks a longitudinal component of the reaction chamber.

[0017] Depending on the embodiment, the two opposing diffusion portions may have a triangular shape.

[0018] In some embodiments, the two opposing diffusion sections each have a plurality of planar walls joined to one another, forming an enclosure between them that functions as a flow path.

[0019] Depending on the embodiment, the two opposing diffusion portions are formed within the flange structure.

[0020] In some embodiments, the fluid distributor includes the two opposing diffusion sections and the transition region.

[0021] In some embodiments, the reaction chamber inlet (or the transition region of the fluid distributor located upstream of the reaction chamber inlet) is formed to diffuse the flow of fluid entering the reaction chamber in a vertical direction.

[0022] In some embodiments, the fluid distributor has a diffusion space comprising a plurality of diffusion regions. In each of the plurality of diffusion regions, fluid flows in through at least one inlet located in the diffusion region. This fluid flow propagates laterally while diffusing through the diffusion region and also propagates in a direction opposite to the fluid flow flowing in from the other diffusion regions. The fluid distributor also has a transition region. The fluid flows that reach the transition region from each of the plurality of diffusion regions mix in the transition region. The transition region is configured to guide the mixed flow as a laminar flow into the reaction chamber.

[0023] In some embodiments, the fluid distributor is configured to diffuse the fluid flow in a direction parallel to the flat surface of the substrate placed in the reaction chamber.

[0024] In some embodiments, the fluid distributor is configured to diffuse the fluid flow in a direction parallel to the height of a substrate stack formed by a plurality of substrates arranged so that their (flat) surfaces face each other.

[0025] In some embodiments, the fluid distributor includes a transition region that is mirror-symmetric with respect to the longitudinal axis of the reaction chamber.

[0026] In some embodiments, the transition region of the fluid distributor is not mirror-symmetric with respect to the longitudinal axis of the reaction chamber.

[0027] According to an embodiment, the substrate processing apparatus includes an external housing (or an outer chamber) that houses or at least partially houses the reaction chamber. The external housing is configured such that a substrate is positioned in the loading / unloading state.

[0028] According to an embodiment, the substrate processing apparatus is configured to maintain a pressure difference between the reaction chamber and the external housing during substrate processing.

[0029] According to an embodiment, the substrate processing apparatus includes a reaction chamber lid integrated with an elevating and rotatable substrate rotation system.

[0030] According to an embodiment, the reaction chamber lid is movable between the loading / unloading state and the processing state.

[0031] According to an embodiment, the reaction chamber lid is configured to seal the reaction chamber in the processing state.

[0032] According to an embodiment, in the processing state, the substrate processing apparatus is configured to maintain a gap between the reaction chamber lid and the reaction chamber (or the main body portion of the reaction chamber) such that the reaction chamber and the external housing are in a fluid communication state even during substrate processing.

[0033] According to an embodiment, the elevating and rotatable substrate rotation system includes a rotation shaft within an elevating shaft.

[0034] According to an embodiment, the rotation shaft is rotatable independently of the elevating shaft.

[0035] According to an embodiment, the elevating shaft is configured to move perpendicular to the longitudinal axis of the reaction chamber. Here, the longitudinal axis is parallel to the direction of the laminar flow within the reaction chamber.

[0036] According to an embodiment, the substrate processing apparatus is configured to rotate a substrate within the reaction chamber in a plane perpendicular to the elevating shaft.

[0037] Depending on the embodiment, the substrate processing apparatus includes a rotatable substrate holder.

[0038] In some embodiments, the substrate holder is detachably attached to the vertically movable substrate rotation system.

[0039] Depending on the embodiment, the vertically adjustable substrate rotation system includes a rotary motor for rotating the substrate and a lifting motor for moving the substrate between a loading / unloading state and a processing state. Here, the rotary motor and the lifting motor are located outside the reaction chamber and the external housing.

[0040] In some embodiments, the substrate is a wafer having a 3D structure on at least one surface.

[0041] According to a second aspect, a vertically movable substrate rotation system is provided for a substrate processing apparatus that is the first aspect or an embodiment thereof. This system is A lifting mechanism having a lifting shaft that can be attached to the lid of the reaction chamber for moving the substrate in a direction perpendicular to the surface of the substrate between the loading / unloading state and the processing state; A rotating mechanism having a rotating shaft for rotating the substrate within the reaction chamber, independently of the aforementioned lifting shaft; It is equipped with.

[0042] Depending on the embodiment, the rotating shaft is located within the lifting shaft.

[0043] Depending on the embodiment, the vertically movable substrate rotation system may be The lid of the reaction chamber and; A rotatable substrate holder positioned on one side of the lid, opposite to the lifting axis, configured to accommodate multiple substrates arranged so that their (flat) surfaces face each other; The rotating shaft is configured to rotate the substrate by rotating the substrate holder.

[0044] In some embodiments, the substrate holder is configured to accommodate 1 to 30 substrates.

[0045] In some embodiments, the substrate holder is detachably attached to the vertically movable substrate rotation system.

[0046] In some embodiments, the lid is equipped with a positioning tension spring configured to tightly and uniformly adhere to the reaction chamber in the processing state.

[0047] In some embodiments, the lifting axis is movable in a direction perpendicular to the substrate surface between the processing state and the loading / unloading state.

[0048] In some embodiments, the lid is integrated with one end of the lifting shaft, and the rotating shaft is configured to pass through the lid. (This is to seal the reaction chamber in the processing state.)

[0049] Depending on the embodiment, the vertically adjustable substrate rotation system includes a lifting motor for moving the lifting axis and a rotation motor for rotating the rotation axis.

[0050] Depending on the embodiment, the vertically adjustable substrate rotation system includes a vacuum feedthrough.

[0051] Depending on the embodiment, the vacuum feedthrough is adapted to rotate the rotation axis within the lifting axis.

[0052] According to a third exemplary aspect, the following method is provided. This method is The process involves loading multiple substrates into the reaction chamber of a substrate processing apparatus as a substrate stack within a substrate holder, wherein the multiple substrates are arranged so that their surfaces face each other within the substrate stack; In the reaction chamber, multiple substrates are rotated in a laminar flow of the precursor; Includes.

[0053] In some embodiments, the loading further includes moving the substrate from the loading / unloading state to the processing state in a direction perpendicular to the substrate surface using a vertically movable substrate rotation system.

[0054] In some embodiments, rotating the substrate in a laminar flow of the precursor within the reaction chamber includes rotating the substrate within the reaction chamber in the processing state using a vertically movable substrate rotation system.

[0055] Depending on the embodiment, the method includes establishing a laminar flow of a fluid that propagates from the inlet to the reaction chamber, through the reaction chamber, and between the plurality of substrates.

[0056] Depending on the embodiment, the rotation includes continuous rotation.

[0057] Depending on the embodiment, the rotation may include rotating in steps, such as 90 degrees or 180 degrees at a time, using, for example, an indexing mechanism.

[0058] While various aspects and embodiments have been presented, these are not intended to limit the scope of the invention. These embodiments are merely used to illustrate specific aspects and steps that may be used in various implementations. Some embodiments may be presented only by reference to specific exemplary aspects. Corresponding embodiments may also apply to other exemplary aspects. [Brief explanation of the drawing]

[0059] Several embodiments will be described with reference to the following accompanying drawings. [Figure 1] Figures 1a and 1b are schematic cross-sectional views from the side of a substrate processing apparatus according to a specific embodiment, showing the loading / unloading state and the processing state, respectively. [Figure 2] Figures 2a and 2b are schematic cross-sectional views from the side of another substrate processing apparatus according to a specific embodiment, in the loading / unloading state and the processing state, respectively. [Figure 3] Figures 3a and 3b are schematic cross-sectional views from the side of yet another substrate processing apparatus according to a particular embodiment, in the loading / unloading state and the processing state, respectively. [Figure 4] This is a schematic top view of a reaction chamber and fluid distributor according to a specific embodiment. [Figure 5] This is a schematic cross-sectional view from the side of a vertically adjustable substrate rotation system according to a specific embodiment. [Figure 6] Figures 6a and 6b are schematic cross-sectional views of a fluid distributor in different orientations according to a particular embodiment. [Figure 7] Figures 7a and 7b are schematic cross-sectional views of the transition region of a fluid distributor according to a specific embodiment, showing a symmetrical structure and an asymmetrical structure, respectively. [Figure 8] This is a schematic side view of a fluid distributor with a removable cover according to a particular embodiment. [Figure 9] Figures 9a-9c are schematic side, front, and top cross-sectional views of a substrate processing apparatus according to a specific embodiment. This substrate processing apparatus is configured to accommodate substrate stacks of considerable height. [Figure 10] Figures 10a-10d are structural diagrams of a substrate processing apparatus according to a specific embodiment. This substrate processing apparatus is configured to accommodate substrate stacks of considerable height. Substrates are not depicted in Figures 10a and 10b, but they are depicted in Figures 10c and 10d. [Figure 11] Figures 11a and 11b are schematic side views and cross-sectional views, respectively, of a substrate processing apparatus according to a specific embodiment. [Figure 12] Figures 12a and 12b are schematic side and cross-sectional views, respectively, of another substrate processing apparatus according to a particular embodiment. This substrate processing apparatus is configured to accommodate substrate stacks of considerable height. [Figure 13] A schematic cross-section of a substrate holder according to a specific embodiment configured to accommodate up to 30 substrates is shown. [Figure 14]This is a perspective view of a substrate holder for a substrate processing apparatus according to a specific embodiment. [Figure 15] This is a perspective view of a substrate holder for a substrate processing apparatus according to a specific embodiment. [Figure 16] This is a perspective view of a substrate holder for a substrate processing apparatus according to a specific embodiment. [Figure 17] This is a perspective view of the main body of the reaction chamber according to a specific embodiment. [Figure 18] Figures 18a-18c schematically show a detailed cross-section of a part of a substrate holder for a substrate processing apparatus according to a specific embodiment. [Figure 19] A substrate processing system according to a specific embodiment is shown. [Figure 20] A flowchart of substrate processing according to a specific embodiment is shown. [Figure 21] A flowchart of substrate processing according to another specific embodiment is shown. Detailed description

[0060] In the following description, similar symbols indicate similar elements or steps.

[0061] Several embodiments described in detail below are substrate processing apparatuses equipped with reaction chambers for arranging multiple substrates with their main surfaces (flat surfaces) adjacent to each other. Certain embodiments disclose a fluid distributor configured to guide a fluid flow into the reaction chambers. In some embodiments, the flow established at the inlet of the reaction chamber and propagating between the substrate surfaces along the length of the chamber is laminar. In some embodiments, a vertically adjustable substrate rotation system is configured to move the substrates between a processing state and an loading / unloading state, and to rotate the substrates in a laminar flow (in the processing state). In some embodiments, the substrate processing apparatus is configured to accommodate and process up to 25 to 30 substrates (in substrate holders). A vertically adjustable substrate rotation system is used to move the substrates. In some embodiments, the substrate processing apparatus is configured to be implemented as a substrate processing system or as part of a substrate processing system.

[0062] In this specification, laminar flow (streamline flow) or lateral flow is defined as a flow without turbulence (a flow without turbulent velocity fluctuations). Laminar flow always proceeds in one direction, for example, from the inlet to the outlet of a reaction chamber. However, lateral or vertical spreading of lateral flow, or deviation from the shortest straight path, can occur as long as the flow continues in a given direction. That is, laminar flow as used herein may curve, but it does not reverse or flow backward. Laminar flow includes lateral diffusion of the fluid within the reaction chamber. In the absence of vortices or flows in other directions, the flow layers / fluid flow in laminar flow slide parallel to each other. For clarity, it should be noted that the present invention should not be confused with any Venturi mechanism, either in terms of structural details or functionality. This disclosure does not utilize incompressible liquids. This disclosure utilizes gaseous media under high vacuum conditions and, in many cases, high temperatures.

[0063] In the disclosed apparatus, laminar flow is maintained for both the precursor fluid and the inert fluid. The latter occurs in ALD, for example, during the purging period. Thus, the substrate placed in the substrate holder encounters laminar flow within the reaction chamber. Advantageously, in certain embodiments, potential directional effects due to unidirectional flow, such as differences or defects in leading-edge and trailing-edge deposition, can be mitigated by rotating the substrate. That is, by rotating the substrate, the fluid is guided uniformly from all directions to the substrate during the deposition process.

[0064] Specific embodiments of this disclosure relate to substrate processing apparatus. Substrate processing apparatus according to specific embodiments are shown in the accompanying drawings. The substrate processing apparatus is configured to utilize vapor deposition-based technical principles. In a preferred embodiment, the substrate processing apparatus is an atomic layer deposition (ALD) apparatus.

[0065] In ALD, at least one substrate is typically exposed to multiple temporally separated precursor pulses within a reaction vessel in order to deposit material onto the substrate surface via a continuous self-saturated surface reaction. In the description of this application, the term ALD encompasses all available ALD-based technologies, as well as all equivalent or closely related technologies. This includes, for example, variants of ALD such as MLD (Molecular Layer Deposition), plasma-assisted ALD such as PEALD (Plasma Enhanced Atomic Layer Deposition), and photon-enhanced ALD, also known as flash-enhanced ALD.

[0066] Depending on the embodiment, other deposition techniques such as physical vapor deposition (PVD) or plasma-enhanced chemical vapor deposition (PECVD) processes may be applied to the substrate processing apparatus.

[0067] Depending on the embodiment, the substrate processing apparatus is an atomic layer etching (ALE) apparatus.

[0068] Figures 1a and 1b are schematic cross-sectional views from the side of a substrate processing apparatus according to a specific embodiment, in the loading / unloading state and the processing state, respectively. In the loading / unloading state, the substrate 130 is outside the reaction chamber 120. In the processing state, the substrate 130 is at least partially inside the reaction chamber 120. In the embodiment of Figures 1a-1b, in the loading / unloading state, the substrate 130 is located below the reaction chamber (in the intermediate space 135). Therefore, when transitioning to the processing state, the substrate 130 enters the reaction chamber 120 from below.

[0069] Figures 2a-2b and 3a-3b are schematic cross-sectional views from the side of another substrate processing apparatus according to a specific embodiment, in the loading / unloading state and the processing state, respectively. A difference from the embodiment shown in Figure 1a-1b is that in the embodiment shown in Figure 2a-3b, the substrate 130 is located above the reaction chamber 120 (within the intermediate space 135) in the loading / unloading state. Therefore, when moving to the processing state, the substrate 130 enters the reaction chamber 120 from above. In the processing state, the substrate 130 is at least partially inside the reaction chamber 120.

[0070] A further difference is that in the substrate processing apparatus 100 according to the embodiment shown in Figures 1a-2b, the fluid distributor 600 is configured such that the supply lines 125a and 125b are separated vertically, for example, located on the same vertical line. In such a case, the diffusion regions 620a and 620b of the fluid distributor 600 (see Figure 6a) are configured to provide a fluid flow that is distributed horizontally, in particular.

[0071] In some embodiments, the fluid distributor 600 is configured such that the supply lines 125a and 125b are separated horizontally, as shown in Figures 3a-3b and 4. In Figures 3a-3b, the second supply line 125b is located behind the first supply line 125a, so only the first supply line 125a is visible. In the top view of Figure 4, both supply lines 125a and 125b are located on the same horizontal plane. In such cases, the diffusion regions 620a and 620b of the fluid distributor 600 (see Figure 6b) are configured to provide a fluid flow that is distributed particularly vertically. The fluid distributor 600 will be described further in relation to Figure 6-8. Advantageously, lateral (in the horizontal plane) or vertical fluid diffusion upon inflow into the reaction chamber can be improved by selecting an appropriate orientation for the fluid distributor 600.

[0072] Figure 4 is a schematic top view of a reaction chamber and fluid distributor according to a specific embodiment. The reaction chamber 120 shown in Figure 4 could be, for example, the reaction chamber 120 of the substrate processing apparatus shown in Figures 3a-3b.

[0073] The substrate processing apparatus 100 includes a reaction chamber 120 for processing the substrates 130. The reaction chamber 120 is sometimes referred to as the inner chamber. Preferably, the reaction chamber 120 is configured as a flat, elongated container with dimensions suitable for accommodating a predetermined number of substrates 130. This allows for efficient and uniform gas flow among the multiple substrates 130 arranged on the holder 140 (through the substrate stack), and also allows for efficient and uniform gas flow on the outer surfaces of the multiple substrates 130 located towards the edges of the substrate batch (i.e., towards the edges of the substrate stack). In other words, all flat surfaces of the multiple substrates 130 within the substrate holder 140 are exposed to substantially similar conditions and processed in an equivalent manner.

[0074] The external housing 110 at least partially houses (or partially or completely encloses) the reaction chamber 120. The external housing 110 is also called the outer chamber. An intermediate space 135 is formed between the outer wall of the reaction chamber 120 and the inner wall of the external housing 110. In some embodiments, the intermediate space 135 formed by the interior of the external housing 110 is maintained under vacuum and is called the vacuum chamber.

[0075] The external housing 110 includes a closable opening 115, such as a load lock, for loading and unloading the substrate 130 and / or substrate holder 140 into and out of the external housing 110 when the vertically movable substrate rotation system 500 is in the loading / unloading state. In the loading / unloading state, the substrate holder 140 and the substrate are outside the reaction chamber 120, in the intermediate space 135. In the processing state, the substrate 130 is at least partially inside the reaction chamber 120.

[0076] The rotatable substrate holder 140 houses the substrates 130 as a stack (i.e., multiple substrates stacked on top of each other). The flat surfaces of the substrates (or wafers) 130 are adjacent (or facing) each other, allowing fluid to flow between the flat surfaces of the substrates 130. That is, the fluid can flow through the substrate stack. The rotary motor 155 rotates the substrates 130 and the substrate holder 140 during processing. This makes it possible to process the substrates 130 uniformly under laminar flow and improve processing quality. This provides the advantage of improved fluid flow to the entire surface of the substrates 130 during processing.

[0077] Stacking multiple substrates 130 in the reaction chamber so that they are close together but with gaps between them helps establish laminar flow between these substrates 130. In practice, the reaction chamber 120 can be configured in various sizes to dimensionally accommodate various standard substrates 130, such as disc-shaped wafer substrates in the range of 25-300 mm in diameter. The reaction chamber 120 (and accordingly the entire reaction apparatus 100) can be further modified to accommodate substrates 130 in the range of 100 mm to 1000 mm, preferably to accommodate substrates 130 in the range of 100 mm to 1000 mm, to accommodate substrates 130 with a diameter exceeding 300 mm. Rotating the substrates 130 during the deposition process can account for and mitigate the effects of non-uniform flow and potential fluctuations.

[0078] The precursor and inert gas (fluid flows F1 and F2 in Figure 1a) are supplied to the reaction chamber in fluid form via supply lines 125a and 125b. The reaction fluid flowing through supply lines 125a and 125b is (preferably) a gaseous substance containing a predetermined precursor chemical, which, depending on the embodiment, is carried by an inert carrier or inert fluid, or mixed with an inert carrier or inert fluid. This inert carrier or inert fluid is a fluid, preferably a gas, that is substantially inactive with respect to the precursor (reaction chemical) and reaction product, such as nitrogen (N2), argon (Ar), or other suitable gaseous medium. The inert fluid or carrier gas is supplied from a separate source.

[0079] In some embodiments, the precursor fluid is supplied to the reaction chamber 120 by at least one supply line 125a, 125b. Although two supply lines are shown in the embodiment of Figure 1-4, the number of supply lines may vary depending on the embodiment. In some embodiments, the substrate processing apparatus 100 has one, two, three, or four supply lines. In some embodiments, multiple supply lines 125 are connected to various precursor sources and sources or supplies of inert gas supplied to the reaction chamber 120.

[0080] Preferably, the precursor fluid is supplied to the reaction chamber 120 in a series of pulses. The fluid distributor 600 (highlighted with a dashed box in Figures 1a-2b) receives the fluid from supply lines 125a and 125b and establishes a laminar flow through the reaction chamber 120.

[0081] The laminar fluid that has passed through the substrate 130 and the reaction chamber 120 converges at the outlet of the reaction chamber 120, forming an exhaust flow. The exhaust flow is discharged from the reaction chamber 120 through the exhaust pipe 190. The exhaust pipe is located on the opposite side of the reaction chamber 120, facing the fluid distributor 600.

[0082] The exhaust flow may contain, for example, excess carriers, precursors, and reaction products. In some embodiments, a vacuum pump is connected to the exhaust pipe 190 and used to remove fluid matter continuously throughout the entire film deposition process or at predetermined intervals. A vacuum pump is shown in Figure 9a, for example.

[0083] A heater 105 is located inside the external housing 110 and is configured to regulate the processing temperature. Figures 1a and 1b show one heater 105, but there may be more heaters 105.

[0084] In some embodiments, the reaction chamber 120 is kept under vacuum during operation, loading, and unloading, and the pressure inside the reaction chamber 120 is maintained at less than 1 kPa (10 mbar), preferably 10 Pa (0.1 mbar) or less. During loading and unloading, the reaction chamber 120 is in fluid communication with the intermediate space 135 between loading and unloading.

[0085] In some embodiments, the reaction chamber 120 is in fluid communication with the intermediate space 135 during processing. That is, in certain embodiments, the reaction chamber 120 is not sealed during processing in the processing state. That is, in certain embodiments, the reaction chamber 120 is partially open.

[0086] In some embodiments, the pressure inside the reaction chamber 120 is set to the same level as the ambient pressure.

[0087] In some embodiments, the pressure in the reaction chamber 120 is equal to the pressure in the intermediate space 135.

[0088] In some embodiments, the pressure in the intermediate space / vacuum chamber 110 is maintained at a level of at least 1 kPa (10 mbar). Preferably, the pressure in the intermediate space 135 is maintained at a level greater than 1 kPa, establishing a pressure difference between the inside of the reaction chamber 120 (typically less than 100 Pa) and the inside of the vacuum chamber 110 during substrate processing.

[0089] In some embodiments, the pressure in the intermediate space 135 is maintained at a higher level than the pressure in the reaction chamber 120 during substrate processing.

[0090] Depending on the embodiment, the pressure in the intermediate space 135 may be lower than or equal to the pressure in the reaction chamber 120 during substrate processing, depending on specific operating parameters, precursors, and / or reaction conditions.

[0091] The vertically adjustable substrate rotation system 500 is used to move the substrate 130 between the loading / unloading state (e.g., Figure 1a) and the processing state (e.g., Figure 1b) within the thin film deposition apparatus 100. A vertically adjustable substrate rotation system 500 according to a specific embodiment is schematically shown in Figure 5. The vertically adjustable substrate rotation system 500 according to the embodiment in Figure 5 can be installed, for example, in the thin film deposition apparatus 100.

[0092] In some embodiments, the movable substrate rotation system 500 is mounted as a modular unit, for example, on the (sub)frame 195 or bracket of the thin-film deposition apparatus 100. By directly mounting the movable substrate rotation system 500 to the apparatus 100, the movable substrate rotation system 500 is effectively supported and aligned with respect to the external housing 110 and the reaction chamber 120 (opening). The movable substrate rotation system 500 is mounted to the (sub)frame 195, for example, by bolts.

[0093] Depending on the embodiment, the vertically movable substrate rotation system 500 includes at least a lifting motor 165, a lifting shaft 160, a rotation motor 155, and a rotation shaft 150.

[0094] Depending on the embodiment, the system 500 may include a lid 180, or the system 500 may be integrated into the reaction chamber lid 180.

[0095] Depending on the embodiment, the system 500 includes a substrate holder 140.

[0096] In some embodiments, the vertically movable substrate rotation system 500 includes a linear module 175.

[0097] In some embodiments, the vertically movable substrate rotation system 500 includes a vacuum bellows 185.

[0098] In some embodiments, the vertically movable substrate rotation system 500 includes a vacuum seal feedthrough 170.

[0099] In some embodiments, the vacuum seal feedthrough 170 is a magnetic fluid vacuum seal feedthrough. Thus, in certain embodiments, the apparatus 100 or the liftable substrate rotation system 500 is equipped with a dynamic seal for the feedthrough through the wall of the vacuum chamber 110.

[0100] In some embodiments, the substrate holder 140 is replaceable. The substrate 130 is loaded into the substrate holder 140 so that it can be moved by a vertically movable substrate rotation system 500.

[0101] In some embodiments, a vertically movable substrate rotation system 500 connected to the thin film deposition apparatus 100 moves the substrate 130 vertically between the processing state and the loading / unloading state, enabling efficient processing. The substrate 130 is moved vertically so as to be housed in the reaction chamber 120. In the processing state, the vertically movable substrate processing system 500 is configured to rotate the substrate within the reaction chamber 120 during substrate processing. The lid 180 is configured to seal the reaction chamber 120. The substrate holder 140 and the substrate 130 are rotatable within the reaction chamber 120 by a rotary motor 155. By combining the rotation of the substrate stack with laminar flow established by the fluid distributor, the effects of processing defects are reduced. By reducing non-uniform fluid distribution and turbulence, homogeneous deposition can be achieved.

[0102] The lifting motor 165 is fixed and remains stationary relative to the (sub)frame 195 of the thin film deposition apparatus 100. The lifting motor 165 is preferably a servo motor. The lifting motor 165 moves the linear module 175 and the lifting shaft 160 connected to it up and down, i.e., vertically. That is, the lifting shaft 160 is connected to the lifting motor 165 via the linear module 175. Depending on the embodiment, the position of other parts of the liftable substrate rotation system 500 (parts connected to the linear module 175 and / or the lifting shaft 160), excluding the lifting motor 165, is also adjustable vertically. When the substrate 130 and substrate holder 140 are at least partially inside the reaction chamber 120, the liftable substrate rotation system 500 is in the processing state. When the substrate 130 and substrate holder 140 are (completely) outside the reaction chamber 120, the liftable substrate rotation system 500 is in the loading / unloading state.

[0103] Depending on the embodiment, for example, if the substrate stack has a considerable height, the substrate holder 140 may be partially located inside the reaction chamber 120 even when loading or unloading.

[0104] Multiple substrates 130 are placed on a rotatable substrate holder 140 for processing. The substrates 130 are preferably flat planar substrates, for example, wafers with flat surfaces on both sides.

[0105] In some embodiments, the substrate holder 140 is a removable component, separate from the rest of the thin-film deposition apparatus 100 and separate from the vertically movable substrate rotation system 500.

[0106] In some embodiments, the substrate holder 140 is a fixed, non-removable part of a vertically movable substrate rotation system 500.

[0107] Depending on the embodiment, the substrate holder 140 is a fixed, non-removable part of the substrate processing apparatus 100.

[0108] The substrate holder 140 is configured to accommodate a batch of substrates, i.e., a plurality of substrates arranged so that their flat surfaces are parallel and adjacent to each other. That is, they are accommodated as a substrate stack (a stack of substrates) with gaps between the faces of adjacent planar substrates to allow a fluid flow (which is laminar) to flow between the substrates 130. The substrate holder 140 aligns the surfaces of the planar substrates parallel to the longitudinal axis of the reaction chamber 120. The longitudinal axis of the reaction chamber 120 is the axis along the direction of the fluid flow from the (fluid) inlet of the reaction chamber 120 to the exhaust pipe 190. For example, in the embodiment shown in Figure 1-3, the fluid flow and the longitudinal axis of the reaction chamber 120 are substantially horizontal.

[0109] The substrate holder 140 can accommodate one or more substrates 130. Preferably, the substrate holder 140 accommodates multiple substrates 130 that are processed as a single batch.

[0110] Depending on the embodiment, the substrates 130 are loaded one by one into the substrate holder 140.

[0111] In some embodiments, two or more substrates 120 are loaded into the substrate holder 140 at once.

[0112] Depending on the embodiment, one, two, three, four, or five substrates 130 may be loaded into the substrate holder at one time.

[0113] Depending on the embodiment, up to five substrates 130 can be loaded into the substrate holder 140 at once.

[0114] Depending on the embodiment, loading may be performed by a loading robot.

[0115] In some embodiments, the substrate holder 140 includes vertical elements protruding from the base plate or lid. The vertical elements are configured to support the substrate 130 and form a stack of substrates.

[0116] In some embodiments, the substrate 130 is housed in a receiving structure or (one or more) grooves provided by the vertical member.

[0117] Depending on the embodiment, the substrate holder 140 includes two or more vertical members. The substrate holder 140 according to a specific embodiment will be described in more detail later.

[0118] In some embodiments, the substrate holder 140 is connected to the first end (upper end in Figure 1) of the rotating shaft 150. The substrate holder 140 is configured to be rotatable by the rotating shaft 150.

[0119] In some embodiments, the substrate holder 140 is removable from the first end of the rotating shaft 150 and can be removed from the thin film deposition apparatus 100, for example, for cleaning or for replacement with another substrate holder 140. The rotating shaft 150 is configured to be rotatable by a rotary motor 155.

[0120] The rotary motor 155 is coupled to the second end (lower end in Figure 1) of the rotary shaft 150. The rotary motor 155 is configured to rotate the substrate holder 140 and the contained substrate 130 by rotating the rotary shaft 150. The rotary shaft 150 is configured to rotate the substrate holder 140 and the substrate 130 inside it in a plane that includes the substrate surface. That is, the rotary shaft 150 is positioned perpendicular to the flat surface of the substrate 130 and perpendicular to the longitudinal axis of the reaction chamber 120.

[0121] This rotation provides more uniform conductance across the entire surface of the substrate 130. Conductance is defined as the fluid flow rate divided by the pressure loss (C = q / dp). The flow rate varies depending on the flow path. In the case of a circular substrate 130 (e.g., a wafer), fluid flow is easier at the sides because there is less resistance from the substrate 130. On the other hand, the conductance is lowest in the path crossing the center of the wafer, and therefore the dose of chemicals is generally smallest there. This is a fundamental problem because the center of the wafer, where the majority of the surface area to be processed is concentrated, is the region that requires the highest dose. The vertically movable substrate rotation system 500 and the rotation of the substrate 130 mitigate the problem of conductance non-uniformity across the entire substrate 130. The rotation axis 150 is housed within the vertical axis 160. The rotation axis 150 is longer than the vertical axis 160 and extends along the entire length of the vertical axis 160. The first end of the rotating shaft 150 extends further from the first end of the lifting shaft 160 and is connected to the bottom of the substrate holder 140 through the opening of the lid 180. The lid 180 is attached to and supported at the first end of the lifting shaft 160 (upper end in Figure 1a-1b, lower end in Figure 2a-3b). In other words, the rotating shaft passes through the lid 180. The lid 180 is separate from the substrate holder 140 and does not rotate. The lid 180 is fixed to the first end of the lifting shaft 160 that surrounds the rotating shaft 150.

[0122] The second end of the rotating shaft 150 passes through the second open end of the lifting shaft 160 and is connected to the rotary motor 155. The rotary motor 155 is preferably a servo motor. The rotary motor 155 is also connected to the second end of the lifting shaft 160 and / or the linear module 175 and supported by them. Thus, the rotary motor 155 is vertically movable together with the lifting shaft 160 and the linear module 175 as part of the movable lifting system 500.

[0123] The substrate holder 140 and the substrate 130 are rotated at a predetermined rotational speed by the rotary motor 155 during substrate processing.

[0124] Depending on the embodiment, the rotation speed is constant throughout the entire film deposition process.

[0125] Depending on the embodiment, the rotation speed varies depending on the characteristics of the precursor being deposited. The rotation speed may be relatively slow.

[0126] In some embodiments, the rotation speed is half a rotation (180 degrees) over the entire deposition process (including all deposition cycles required to deposit the film). The rotation speed may be relatively fast.

[0127] Depending on the embodiment, the rotational speed is one rotation (360 degrees) during a single chemical pulse.

[0128] In some embodiments, the substrate holder 140 and the substrate 130 are rotated in steps of 90 or 180 degrees, for example, using an indexing mechanism.

[0129] In some embodiments, the substrate holder 140 and the substrate 130 rotate 180 degrees at the midpoint of film deposition, or rotate 90 degrees every quarter of the film deposition cycles.

[0130] Rotating the disc-shaped substrate 130, such as a wafer, within the reaction chamber 120 is advantageous for uniformity of film deposition. The rotation ensures that various parts of the substrate 130 interact equally with the laminar fluid, minimizing positional differences during the deposition process. In other words, because the substrate rotates, the laminar fluid is not directed from only one direction.

[0131] Advantageously, the rotary motor 155 (and the lifting motor 165 of the lifting shaft 160) are located outside the reaction chamber 120 and the external housing 110. This keeps the reaction chamber 120 and the external housing 110 compact and eliminates the need to install the rotary and / or lifting motors 155 and 165 inside the reaction chamber 120 or the external housing 110. Consequently, maintenance and replacement of the motors 155 and 165 are made easier. Furthermore, the placement of the motors 155 and 165 keeps the reaction chamber 120 and the external housing compact because they do not need to be designed to accommodate the motors. As a result, the number of internal components in the reaction chamber 120 and the external housing 110 that are necessary to rotate and move the substrate holder 140 and that may affect fluid flow and require cleaning can be reduced. Consequently, the reaction chamber 120 and the external housing 110 can be designed and manufactured more compactly and more easily conform to the dimensions of the substrate 130. This improves processing quality, reduces the risk of contamination, and makes maintenance easier and simpler.

[0132] The lifting shaft 160 is structurally a hollow rod or tube configured to house the rotating shaft 150, and the rotating shaft 150 is rotatable within the lifting shaft 160 independently of the lifting shaft 160. The lifting shaft 160 itself does not rotate. The lifting shaft 160 is configured to be movable vertically by a lifting motor 165. Therefore, the lid 180, the rotating shaft 150, the substrate holder 140, and the substrate 130 are configured to move together with the lifting shaft 160.

[0133] In some embodiments, the lifting shaft is connected to the tray of the linear module 175, for example, by a fixed bracket. The tray of the linear module 175 is configured to be vertically movable by a lifting motor 165. Therefore, the lifting motor 165 is configured to move the lifting shaft 160 by moving the tray of the linear module 175 up and down.

[0134] In some embodiments, the lid 180 is configured to seal the reaction chamber 120 during processing. Therefore, the lid 180 is configured to form part of the wall of the reaction chamber 120. This prevents fluid communication between the reaction chamber and the intermediate space 135, and makes it possible to individually adjust the vacuum state of both spaces during processing.

[0135] In some embodiments, the lid 180 is equipped with positioning / sealing tension springs located at its four corners to ensure a tight and uniform contact with the reaction chamber 120 during processing. The lifting shaft 160 is configured to support the lid 180 and to support the sealing pressure load.

[0136] In some embodiments, the lid 180 does not seal the reaction chamber 120 during processing. That is, the lid 180 is configured to be held with a small gap between it and the wall of the reaction chamber 120. Therefore, the reaction chamber 120 remains fluidly connected to the intermediate space 135 even during processing.

[0137] Depending on the embodiment, the gap between the lid 180 and the reaction chamber 120 in the processing state is a maximum of 1 mm.

[0138] Depending on the embodiment, the gap is 0.1 mm.

[0139] In some embodiments, this gap is in the range of 0.02 to 0.8 mm. Advantageously, this narrow gap allows for the establishment and control of a pressure difference between the two spaces, while maintaining fluid communication between the reaction chamber and the intermediate space 135. Such a configuration is advantageous and preferred, for example, in deposition processes involving less-than-ideal ALD chemistry.

[0140] Examples of non-ideal ALD chemistry include slow saturation of surface reactions, decomposition components in surface reactions, surface poisoning effects in chemical reactions, and other anomalies. There are many other examples as well. More specific examples of non-ideal ALD chemistry include the thermal decomposition of metal organoamidinate precursors such as TemaHf, slow saturation of surface reactions such as water reactions, and surface poisoning effects in TiCl-based chemical reactions.

[0141] The vacuum seal feedthrough 170 (located inside or attached to the lifting shaft 160) is configured to prevent vacuum leakage while allowing the rotating shaft 150 to rotate independently of the (surrounding) lifting shaft 160.

[0142] In some embodiments, the vacuum seal feedthrough 170 is a magnetic fluid vacuum feedthrough. In some embodiments, a magnetic coupling may be used instead of a magnetic fluid feedthrough to transmit rotation from the ambient atmosphere to the vacuum. In some embodiments, the rotary motor 155 may be placed in the vacuum.

[0143] The lifting shaft 160 and its internal rotating shaft 150 enter the external housing 110 through the chamber feedthrough 145. The vacuum bellows 185 is connected to the chamber feedthrough 145 at its first end (upper end in Figure 1a-b1) and to the upper surface of the linear module 175 at its second end (lower end in Figure 1a-b1). The vacuum bellows 185 allows vertical movement of the lifting shaft 160 relative to the external housing 110 and the chamber feedthrough 145 without compromising the vacuum inside the external housing 110. The chamber feedthrough 145 is configured to allow vertical movement of the lifting shaft 160 through its interior without compromising the vacuum in the intermediate space.

[0144] Depending on the embodiment, the lifting motor 165 drives the lifting shaft 160 downward to reach the loading / unloading state (Figure 1a), causing the substrate holder 140 to descend from the reaction chamber 120 towards the external housing 110.

[0145] In some embodiments, the substrate holder 140 is raised from the reaction chamber 120 to reach an loading / unloading state (e.g., Figures 2a-3b). In the loading / unloading state, the reaction chamber 120 is in fluid communication with the external housing 110. In the loading / unloading state, the rotary motor 155 does not rotate the rotating shaft 150 (and consequently the substrate holder 140). In the loading / unloading state, the substrate 130 can be loaded into (or removed from) the substrate holder 140 through an opening 115 provided in the wall of the external housing 110. The opening 115 can be sealed, for example, by a door and may be equipped, for example, with a load lock.

[0146] Depending on the embodiment, for example as shown in Figure 1b, the lifting motor 165 drives the lifting shaft 160 to raise the substrate holder 140 from the external housing 110 into the reaction chamber 120, bringing it to the processing state.

[0147] In some embodiments, the substrate 130 is lowered to the processing state.

[0148] In some embodiments, the lid 180 seals the reaction chamber 120 during processing. This prevents fluid communication between the reaction chamber 120 and the external housing 110.

[0149] Depending on the embodiment, the lid 180 does not seal the reaction chamber 120 during processing.

[0150] Figures 6a and 6b are schematic cross-sectional views of the fluid distributor 600 in different orientations in one embodiment. In these figures, the fluid distributor 600 is depicted from the direction toward the reaction chamber 120 from the supply lines 125a, 125b. That is, the longitudinal axis of the reaction chamber 120 is perpendicular to the plane of the paper. In the embodiment of Figures 6a-6b, the apparatus 100 is in the processing state. That is, the substrate 130 is located inside the reaction chamber 120 and is visible through the transition region 630 of the fluid distributor 600.

[0151] The fluid distributor 600 is configured to expand the fluid flow received from the point source, i.e., the inlets 610a and 610b in Figures 6a and 6b, in the width direction of the reaction chamber 120 (within the fluid distributor 600) before the fluid flow enters the reaction chamber 120.

[0152] In some embodiments, for example, referring to Figure 6b, the fluid distributor 600 is configured to spread the fluid flow in the height direction of the reaction chamber 120. The purpose of the fluid distributor 600 is to enable effective mixing of the fluid flow supplied through the supply lines 125a and 125b and to establish a persistent laminar flow of fluid through the reaction chamber 120. Thus, efficient diffusion of the fluid into the reaction chamber 120 can be achieved.

[0153] The reaction fluid supplied through multiple supply lines 125a, 125b is received by a fluid distributor 600 before entering the reaction chamber 120. Multiple inlets 610a, 610b are connected to at least one of the supply lines 125a, 125b. The fluid distributor 600 includes diffusion regions 620a, 620b. The fluid distributor 600 also includes a transition region 630. The diffusion regions 620a, 620b together form a diffusion space. The height of the diffusion space (which is perpendicular to the direction of fluid flow across the diffusion regions 620a, 620b) is preferably substantially constant throughout the interior of the diffusion space.

[0154] In the embodiment shown in Figures 6a-6b, the diffusion regions 620a and 620b are separated by a transition region 630, but are located under a common cover 810 (see Figure 8) (note that in Figures 6a-6b, the cover 810 is not shown because the fluid distributor 600 is visible through the cover 810). Each diffusion region 620a and 620b has at least one inlet 610a and 610b. Fluid flows F1 and F2 flow into the diffusion regions 620a and 620b, respectively, through the inlets 610a and 610b.

[0155] The fluid flows supplied from the diffusion regions 620a and 620b merge in the transition region 630. Each fluid in the opposing diffusion regions 620a and 620b is substantially a two-dimensional flow in the longitudinal direction of the reaction chamber 120 (lacking a longitudinal component of the reaction chamber 120). The fluid distributor 600 of the apparatus 100 allows the respective fluids that merge in the transition region 630 to be redirected toward the reaction chamber 120, preferably by substantially 90 degrees, as a combined flow.

[0156] Depending on the embodiment, the diffusion space formed by the diffusion regions 620a and 620b may be formed as a separate component joined to the reaction chamber 120 by standard techniques such as welding. Therefore, in some cases, the diffusion space may be provided as a removable and replaceable compartment. The cover 810 may be supplied as an integral (inseparable) component with the diffusion space. Alternatively, the cover component 810 may be provided as a separate, removable component, for example, to facilitate maintenance. The cover 810 is shown in Figure 8.

[0157] The transition region 630 connects the diffusion regions 620a and 620b to the reaction chamber 120. The transition region 630 is formed by the region between the diffusion space consisting of the diffusion regions 620a and 620b and the reaction chamber 120. Depending on the embodiment, the reaction chamber 120 may have a plurality of mechanisms, such as additional fluid guides (not shown), for efficiently mixing the converging fluid flow.

[0158] In a preferred configuration, the opposing diffusion regions 620a and 620b are triangular in shape, as shown in the cross-sectional view in Figures 6a-6b. The diffusion regions 620a and 620b may also be arranged in an isosceles triangular shape. For example, at least one inlet 610a, 610b may be located at the corner between the two equal sides, opposite the inlet to the transition region 630 (defined by distance D1 in Figure 3), thus forming an isosceles triangle. Distance D1 then defines the base of the isosceles triangle. D1 also defines the maximum width (or maximum height, depending on the orientation of the fluid distributor) of the fluid distributor 600.

[0159] The opposing diffusion regions 620a and 620b consist of planar walls connected to each other, forming an enclosed structure between them that functions as a flow channel.

[0160] In some embodiments, opposing diffusion regions 620a and 620b are formed within a flange structure. Each diffusion region 620a and 620b is established by a compartment having an internal space with a gradually increasing distance (width in the D1 direction) between each inlet 610a and 610b and the transition region 320. The distance between each inlet 610a and 610b and the transition region 320 is denoted by d1. Fluid flows F1 and F2 diffuse from the inlets 610a and 610b to a width D1, respectively (Figures 6a-6b). Because the diffusion regions 620a and 620b are essentially triangular in shape, the fluid propagates between the inlets 610a and 610b and the transition region 630, from a distance d1 to an expanded width D1, essentially following a spreading pattern (radial pattern), but within the limits defined inside the compartments 620a and 620b.

[0161] The inlets 610a and 610b provided in the diffusion regions 620a and 620b are arranged such that fluid flows F1 and F2 propagate through the diffusion regions 620a and 620b over a distance d1 and proceed towards the transition region 630, essentially facing each other. In some embodiments, the inlet 610a on the diffusion region 620a is positioned opposite the inlet 610b on the diffusion region 620b. This allows the fluid flows F1 and F2 to propagate toward each other from opposite directions.

[0162] By providing these features, namely the diffusion regions 620a and 620b as two substantially opposing airfoil-shaped sections, and gradually increasing their width over the distance d1 between the inlets 610a and 610b and the transition region 630 until reaching an expanded width D1, the profile of the fluid flow (F1, F2) propagating through the diffusion regions 620a and 620b becomes laminar.

[0163] In the embodiment shown in Figure 6a, the fluid distributor 600 is vertically configured. That is, the inlets 610a and 610b are separated from each other perpendicularly. This perpendicular direction is parallel to the height direction of the substrate stack in the reaction chamber 120. Therefore, the spread of fluid flows F1 and F2 in the D1 direction in the diffusion regions 620a and 620b is in the planar direction of the substrate 130. Advantageously, the lateral spread of the fluid toward the outer edge in the plane of the substrate 130 can be improved. As a result, more uniform processing conditions can be achieved across the entire width of the reaction chamber 120. This advantageous fluid spread is achieved in the fluid distributor 600 before it reaches the reaction chamber 120.

[0164] In the embodiment of Figure 6b, the fluid distributor 600 is in a horizontal configuration. That is, the inlets 610a and 610b are separated from each other horizontally. In the embodiment of Figure 6b, the fluid distributor 600 is rotated 90 degrees relative to the orientation of the fluid distributor 600 in the embodiment of Figure 6a. The horizontal direction is parallel to the plane of the flat surface of the substrate 130 housed in the substrate holder 140 within the reaction chamber 120. Therefore, the diffusion of fluid flows F1 and F2 in the D1 direction in the diffusion regions 620a and 620b is in the height direction of the substrate stack. Thus, the fluid distributor 600 is configured to supply a fluid flow that is evenly distributed in the height direction of the substrate stack. Advantageously, vertical diffusion of the fluid flow to the uppermost and lowermost substrate layers of the stack can be improved. As a result, the processing quality and conditions of high substrate stacks can be improved.

[0165] Figures 7a and 7b are schematic cross-sectional side views of the transition region (highlighted by dashed lines) of the fluid distributor 600 according to a particular embodiment. The transition region 630 in the embodiment of Figure 7a has a symmetrical shape, while the transition region 630 in the embodiment of Figure 7b has an asymmetrical shape. The transition region 630 is configured to receive and mix fluid flows F1 and F2 arriving via the diffusion regions 620a and 620b, respectively. In the transition region 630, the fluid flows F1 and F2 arriving from essentially opposite sides converge and mix. The mixed fluid flow is formed and further directed to the reaction chamber 120.

[0166] The thick arrows in Figure 7b indicate the fluid flows F1 and F2 to and within the fluid distributor 600. In the substrate processing apparatus 100, a change in the direction of the fluid flow occurs when the fluid flows F1 and F2 pass through the transition region 630 on their way from the diffusion space to the reaction chamber 120. By employing the fluid distributor 600 according to these embodiments, and due to the characteristics of the confined space of the relatively flat reaction chamber 120 that accommodates a batch of vertically stacked substrates 130, the formation of jets, vortices, and / or eddies in the fluid pattern passing through the transition region 630 is minimized, and laminar flow is promoted. As the precursor fluid propagates through the entire length (depth) of the reaction chamber and between the rotating substrates 130 in the form of a stable laminar flow F, the precursor concentration is maintained essentially uniformly. Therefore, a film of the same thickness is deposited on the entire surface of the substrate 130, with precursor molecules uniformly distributed across the entire deposition surface.

[0167] Overall, the design of the transition region 630 ensures the efficient mixing of flows F1 and F2. Thus, a uniform precursor layer is deposited on all (wafer) substrates 130 downstream of the transition region 630 within the reaction chamber 120. This results in uniform precursor concentration across the entire (flat) surface of each individual substrate, as well as across the entire surface of all substrates 130 in the batch (and within the reaction space defined by the reaction chamber 120). Mixing is carried out in the transition region 630 in a highly controlled manner, without vortex formation or pressure loss. This further enables efficient purging.

[0168] In some embodiments, the dimensions of the transition region 630 are substantially equal to the width or height of the substrate 130 housed in the substrate holder 140, depending on the orientation of the fluid distributor 600.

[0169] In some embodiments, the dimensions of the transition region 630 in the D1 direction (see Figures 6a-6b) are substantially equal to the width or height of the reaction chamber 120, depending on the orientation of the fluid distributor 600.

[0170] In a direction parallel to direction d1, the cross-section of the transition region 630 has a double concave, or hourglass shape. That is, the walls 720a and 720b of the transition region 630 form a double concave channel leading from the diffusion space to the reaction chamber 120. Walls 720a and 720b face each other. Two other walls, not visible in Figures 7a-7b, are coplanar with the reaction chamber walls and are preferably planar, as seen, for example, in Figures 3a-3b.

[0171] Upon entering the transition region 630 from the diffusion space, the walls 720a and 720b of the transition region 630 gradually slope or narrow, reaching the narrowest point, the throat 710. The throat 710 has a substantially constant width d2 over the entire distance D1 (Figures 6a-6b). The throat 710 functions as a constriction region. Subsequently, the flow path shape of the transition region, defined by the transition region walls 720a and 720b, expands to the width (or height, depending on the orientation of the fluid distributor) of the reaction chamber 120. Figures 7a-7b show the fluid distributor 600 positioned vertically, but the described embodiments are equally applicable to a fluid distributor 600 positioned horizontally, as shown in Figures 3a-3b and 4.

[0172] The transition region 630 and the throat 710 are configured to enable efficient mixing (by convection and diffusion) of the fluid under laminar flow conditions. In the transition region 630, fluid flows F1 and F2 arriving from substantially opposite directions are redispersed and recombined to form a confluence flow parallel to the longitudinal axis of the reaction chamber 120, without the involvement of turbulent vortices or jets.

[0173] In some embodiments, laminar mixing in the transition region 630 is achieved by a characteristic configuration of the liquid distributor 600 and the reaction chamber 120, as shown in Figures 7a and 7b.

[0174] The flows F1 and F2 converge and mix in the transition region 630. The mixed flows propagate into the reaction chamber 120, which is configured as a substantially flat and elongated body.

[0175] In some embodiments, the reaction chamber 120 has a constant cross-section (in a plane perpendicular to the longitudinal flow) along its entire length defined by its longitudinal axis (from the reaction chamber opening, which is the boundary with the transition region shown in Figure 7a, i.e., from the reaction chamber inlet 750 to the exhaust port 190). Therefore, the mixed flow established at the inlet 750 of the reaction chamber 120 is laminar and propagates between the substrate surfaces (or sides of the substrate) 130 along the length of the reaction chamber 120. In some embodiments, it propagates at a basically uniform speed. In some embodiments, the shape of the reaction chamber 120 curves inward near the exhaust port 190.

[0176] The reaction chamber inlet (750) is formed to diffuse the fluid flow entering the reaction chamber (120) in a vertical direction.

[0177] In some embodiments, as shown in Figure 7a, the transition region walls 720a and 720b of the transition region 630 form a symmetrical transition region channel. That is, walls 720a and 720b are mirror-symmetric with respect to the longitudinal axis of the reaction chamber 730. Therefore, the curvature and angle of walls 720a and 720b are substantially identical. Advantageously, the fluid flow near and beyond the transition region wall 720a and the fluid flow near and beyond the transition region wall 720b can be set to be essentially identical with respect to the reaction chamber 120. That is, the fluid flow parallel to the d1 direction to the substrate region located near the end of the reaction chamber 120 can receive essentially the same fluid flow from the transition region 630.

[0178] In some embodiments, as shown in Figure 7b, the transition region walls 720a and 720b of the transition region 630 form an asymmetrical transition region channel. That is, the walls 720a and 720b are not mirror-symmetric with respect to the longitudinal axis of the reaction chamber 730. Consequently, the curvature and / or constriction angles of the walls 720a and 720b toward the throat 710, and the expansion angles from the throat 710 toward the reaction chamber 120, are different from each other. That is, the fluid flow to the end of the reaction chamber 120 in the direction parallel to direction d1 may be different from each other. Advantageously, the fluid flow to the reaction chamber 120 can be adjusted by the shape of the transition region 630, taking into account different flow environments at the bottom of the reaction chamber 120 (such as the bottom of the substrate holder 140 or the structure of the lid 180) and the top of the reaction chamber 120 (such as the smooth upper wall of the reaction chamber). Thus, the shape of the transition region can optimize the fluid flow to the lateral or longitudinal ends of the reaction chamber.

[0179] In some embodiments, the transition region 630 begins at the transition region opening 740 and ends downstream of the throat 710. In some embodiments, the transition region 630 also includes the reaction chamber inlet 750. In some embodiments, the transition region 630 ends at the reaction chamber inlet 750.

[0180] In some embodiments, the transition area opening 740 and the reaction chamber opening 750 are equal in size.

[0181] Depending on the embodiment, the transition region opening 740 and the reaction chamber opening 750 are not equal.

[0182] Depending on the embodiment, the transition region opening 740 is larger than the reaction chamber opening 750.

[0183] In some embodiments, the transition region opening 740 is smaller than the reaction chamber opening 750. Furthermore, each opening 740, 750 has a length extending over a distance D1 corresponding to the expanded width of each sub-region 620a, 620b (Figures 6a-6b).

[0184] Typically, the cross-sectional area of ​​the reaction chamber opening 750 is defined by the cross-sectional area of ​​the reaction chamber 120. On the other hand, the cross-sectional area of ​​the transition area opening 740 can be modified in the design. Therefore, the width of the reaction chamber opening 750 usually corresponds to the width of the reaction chamber 120. The reaction chamber opening 750 thus demarcates the boundary between the transition area 630 and the reaction chamber 120. Therefore, the reaction chamber opening 750 can also be referred to as the entrance to the reaction chamber 120.

[0185] The liquid distributor 600 may include additional devices to facilitate the mixing of fluids F1 and F2. For example, the liquid distributor 600 may include a flow-forming element 760 (Figure 7b) configured to adjust the flow direction of the fluid flows F1 and F2 entering the transition region 630 and to guide the fluids substantially toward the reaction chamber 120.

[0186] Depending on the embodiment, the fluid molding element 760 is provided as an integral extension of the cover 810.

[0187] Depending on the embodiment, the flow-shaping element 760 is provided as a separate, detachable component inside the cover 810.

[0188] Depending on the embodiment, the flow-shaping element 760 may have a cross-section of a shape such as a dome, a triangle, or a truncated triangle. In the fluid distributor 600, it is preferable that the element 760 is positioned such that its top (the most protruding flow-shaping portion) faces the reaction chamber 120.

[0189] Element 760 prevents the fluxes F1 and F2, which reach the transition region 630 via sections 620a and 620b, from directly colliding at the transition region inlet 740. Instead, the fluid forming element 760 guides the fluxes F1 and F2 toward the throat 710. This configuration improves the mixing rate and uniformity of the mixing.

[0190] Figure 8 is a schematic side view of a removable cover 810 of a fluid distributor 600 according to a specific embodiment.

[0191] In some embodiments, the fluid distributor 600 includes a removable cover 810, which is attached, for example, by bolts. Advantageously, the removable cover 810 allows for improved maintenance and cleaning of the fluid distributor 600.

[0192] In some embodiments, the cover 810 includes mounting points 820a, 820b for supply lines 125a, 125b.

[0193] Figures 9a-9c are schematic side, front, and top cross-sectional views of a substrate processing apparatus 100 configured to accommodate stacked substrates according to a particular embodiment. In Figures 9a-9c, the outer vacuum chamber is omitted. This substrate stack has considerable height. In such embodiments, a horizontal configuration of the fluid distributor is preferred (e.g., Figures 6b, 9b, 10a-10d). That is, the distribution of the vertical fluid flow in the height direction of the substrate stack is maximized.

[0194] In some embodiments, the substrate processing apparatus is the apparatus shown in the embodiment of Figure 1-3, and comprises a reaction chamber 120 and a substrate holder 140 configured to accommodate a stack of 1 to 30 substrates 130.

[0195] Depending on the embodiment, "considerable height" of the substrate refers to the height of a stack of up to 30 substrates 130.

[0196] In some embodiments, the reaction chamber is configured to process batches of up to 30 substrates at a time.

[0197] In some embodiments, the vertically adjustable substrate rotation system 500 is configured to rotate the substrate 130 during processing. It is also configured to move the substrate between the loading / unloading state and the processing state. Figures 9a-9b show the vertical axis 160 of the vertically adjustable substrate rotation system 500.

[0198] In some embodiments, the height-adjustable substrate processing system 500 includes a substrate holder 140 configured to accommodate up to 30 substrates.

[0199] In some embodiments, the reaction chamber 120 includes a substrate holder 140 configured to accommodate up to 30 substrates.

[0200] In some embodiments, the reaction chamber 120 is sealed by the lid 180 during processing.

[0201] In some embodiments, the reaction chamber 120 is partially open even during processing; that is, it is not sealed by the lid 180.

[0202] Figure 9c is a top view of the fluid channel (solid arrow) traversing the substrate 130 within the reaction chamber 120. Because there is less restriction from the substrate on the sides, the fluid conductance is lowest in the center of the substrate 130. Rotating the substrate can increase the uniformity of the conductance.

[0203] For example, in a tall substrate stack consisting of 30 substrates 130, it becomes difficult to ensure sufficient fluid flow from a single reaction chamber opening 750 to the top and bottom substrates. Therefore, to improve the vertical fluid distribution to the reaction chamber 120, the fluid distributor can be configured horizontally. That is, as described above in Figure 6b, this configuration maximizes fluid diffusion in the height direction of the substrate stack. By combining the advantages of substrate rotation and the fluid distributor, even substrate stacks of considerable height can be processed efficiently in a single operation.

[0204] Figures 10a-10d are structural diagrams of a substrate processing apparatus 100 according to a specific embodiment, configured to accommodate high substrate stacks, such as stacks of up to 30 substrates 130.

[0205] In some embodiments, the shape of the reaction chamber 120 is configured to conform to the substrate 130. For example, in the case of a circular wafer (130), a circular reaction chamber 120 is preferred. In this case, it is preferable that the side walls of the reaction chamber have the same radius of curvature as the wafer (or that the reaction chamber walls conform to the shape of the substrate 130). Such a round-walled reaction chamber 120 is shown in Figures 10a-10d. Advantageously, the voids within the reaction chamber can be minimized. Furthermore, the flow state within the reaction chamber 120 can be made as uniform as possible.

[0206] To promote laminar flow through the laminate of substrates 130 in the reaction chamber 120, the exhaust port 1010 is modified accordingly. The exhaust port 1010 is located on the rear wall of the reaction chamber 120, i.e., on the side opposite to the reaction chamber opening 750. In the specific embodiment shown in Figures 10a-10d, the height of the exhaust port 1010 extends across the entire height of the reaction chamber 120. That is, the height of the exhaust port coincides with the internal height of the reaction chamber 120.

[0207] In the embodiment shown in Figures 10a-10d, the exhaust pipe 190 is connected from below to the exhaust opening 1010 of the reaction chamber 120 at the bottom of the rear of the reaction chamber 120. Therefore, the suction force from the vacuum pump 910 connected to the exhaust pipe 190 is maximum near the bottom of the exhaust opening 1010. The shape of the exhaust opening 1010 is adjusted to enable uniform suction across its entire height. By adjusting the shape of the exhaust opening 1010, the conductance of the fluid passing through the exhaust opening 1010 is adjusted.

[0208] In the specific embodiment shown in Figures 10a-10d, a flow limiting structure such as an exhaust block 1020 is placed at the exhaust opening 1010 to adjust the conductance of the fluid passing through the exhaust opening 1010. The exhaust opening 1010 has a rectangular shape, but the exhaust block 1020 is located in the center of the exhaust opening 1010 and extends across its entire height. The exhaust block 1020 is widest at the bottom of the exhaust opening 1010, i.e., closest to the vacuum conduit 190, and narrows towards the top. Therefore, the area of ​​the exhaust opening 1010 covered by the exhaust block 1020 gradually decreases from the bottom of the exhaust opening 1010 and upwards from the exhaust pipe 190. As a result, the exhaust block 1020 physically blocks the fluid flow, thereby equalizing the conductance and suction force from the vacuum pump 910 through the exhaust opening 1010 at all heights.

[0209] In some embodiments, the shape of the exhaust opening 1010 is configured to conform to the position of the exhaust pipe 190. Therefore, regardless of the position of the exhaust pipe 190, uniform suction can be achieved through the exhaust opening over the entire height of the reaction chamber 120.

[0210] In the specific embodiment shown in Figures 11a-11b, the exhaust pipe 190 is connected to the reaction chamber 120 from the bottom of the rear wall of the reaction chamber 120. Therefore, the strongest suction force is generated at the bottom of the rear wall of the reaction chamber 120, which is closest to the opening of the exhaust pipe 190.

[0211] In some embodiments, the exhaust opening 1010 is formed in an inverted triangular shape, as shown in Figure 11b, in order to reduce suction at the bottom of the exhaust opening 1010 and gradually increase suction towards the top. This allows the conductance to increase towards the top of the exhaust opening. As a result, the shape of the exhaust opening 1010 achieves uniform conductance across the entire height of the exhaust opening 1010.

[0212] In the specific embodiment shown in Figures 12a-12b, the exhaust pipe 190 is connected to the center of the rear wall of the reaction chamber 120. Therefore, the strongest suction force is generated in the center of the rear wall of the reaction chamber 120.

[0213] In some embodiments, to equalize conductance, the exhaust opening 1010 is formed in an hourglass shape as shown in Figure 12b, reducing the suction force in the central part of the exhaust opening 1010 and increasing the suction force at the bottom and top. Advantageously, uniform conductance is achieved across the entire height of the exhaust opening 1010.

[0214] As described above, the substrate holder 140 shown in various embodiments includes vertical elements protruding from the base plate or lid. The vertical elements are configured to support the substrate 130 and form a stack of substrates.

[0215] In some embodiments, the substrate 130 is housed in a receiving structure or (one or more) grooves provided by the vertical member.

[0216] Depending on the embodiment, the substrate holder 140 may include two or more vertical members.

[0217] In some embodiments, the substrate holder 140 includes two vertical elements on opposing sides that support the substrate.

[0218] Depending on the embodiment, the substrate holder 140 is an integrated block and a single structure without welded parts or the like.

[0219] Depending on the embodiment, the substrate holder 140, together with the main body of the reaction chamber (which may also be an integrated block or a single component), forms a sealed reaction chamber enclosure.

[0220] In some embodiments, the sealed reaction chamber enclosure, when closed, is open only at the inlet side for connection to the fluid distributor 600 (or the two opposing diffusion sections of the fluid distributor 600) and at the opposite outlet side for the exhaust pipe or connection section 190.

[0221] In some embodiments, the substrate holder 140 (and the main body of the reaction chamber) is manufactured by a one-piece block manufacturing method such as 3D printing. Such a reaction chamber (or the main body of the reaction chamber) is shown in Figure 17.

[0222] Figure 13 schematically shows a cross-sectional view from the side of a substrate holder according to a particular embodiment, configured to accommodate up to 30 or more substrates. Figures 14-16 show a substrate holder 140 according to a particular embodiment.

[0223] In some embodiments, the substrate holder (140) is monolithic. Therefore, in certain embodiments, the substrate holder (140) is manufactured from a single solid material block.

[0224] In some embodiments, the substrate holder 140 includes a vertical member 1310, which is configured to accommodate the substrate 130 on top of the ridge (shelf portion) 1320 or in the groove between the ridges.

[0225] In some embodiments, the substrate holder 140 includes at least two vertical elements 1310. In some embodiments, the substrate holder 140 includes vertical elements that accommodate 15 or more substrates, or 25 or more substrates.

[0226] Depending on the embodiment, the substrate holder may accommodate 15 or more substrates and may include vertical elements capable of accommodating up to 30 or 50 substrates.

[0227] In some embodiments, the vertical member 1320 includes a ridge 1320 for housing the substrate 130.

[0228] In some embodiments, the substrate holder has the capacity to accommodate 1 to 20 substrates, and in other embodiments, it has the capacity to accommodate up to 30 substrates 130.

[0229] In some embodiments, the substrate holder includes a base plate 1330.

[0230] In some embodiments, the substrate holder does not have a base plate 1330, but the lid 180 functions as a base plate. That is, the lid 180 functions as the surface closest to the bottom substrate 130 housed in the substrate holder 140.

[0231] Depending on the embodiment, the substrate holder may be detachable.

[0232] In some embodiments, the substrate holder 140 is removable from the external housing 110 for cleaning or loading and unloading substrates, for example, outside the external housing 110 and / or reaction chamber. The substrate holder 140 is interchangeable with another substrate holder 140, for example, capable of accommodating a different number of substrates 130 or substrates 130 of different sizes.

[0233] Depending on the embodiment, the loading and unloading of the substrate 130 may be performed automatically by a loading robot arm.

[0234] Depending on the embodiment, one, two, three, four, or five circuit boards may be loaded at a time.

[0235] Depending on the embodiment, loading and unloading are performed manually by the user. By making the substrate holder 140 detachable, the substrate holder 140 configured to accommodate substrates 130 of various sizes, shapes, and quantities can be used in the vertically adjustable substrate rotation system 500 and substrate processing apparatus 100. Furthermore, the distance between adjacent substrates can be adjusted by selecting substrate holders 140 with different spacings. Therefore, by selecting the appropriate substrate holder 140, multiple substrate-related processing parameters can be easily controlled and adjusted.

[0236] In some embodiments, the substrate holder 140 is configured to hold a batch of 1 to 30 substrates 130.

[0237] In some embodiments, the substrate holder 140 has slots for holding a batch of 15 substrates 130.

[0238] In some embodiments, the substrate holder 140 is configured to accommodate a (circular) substrate 130 having a diameter in the range of 100 to 1000 mm, preferably 200 mm, and most preferably 300 mm.

[0239] Figures 18a-18d schematically show a detailed cross-section of a portion of a substrate holder for a substrate processing apparatus according to a specific embodiment.

[0240] In some embodiments, the substrates 130 are arranged in the substrate holder 140 such that they are equidistant from each other.

[0241] Depending on the embodiment, the distances between the flat surfaces of the substrate 130 are not equal.

[0242] In some embodiments, the substrates 130 in a batch are arranged such that their flat surfaces are equidistant from each other. That is, the spacing between the ridges 1320 is equal.

[0243] In some embodiments, the arrangement of the substrate 130 in the substrate holder 140 is mirror image, or symmetrical, with respect to the longitudinal axis of the reaction chamber 120.

[0244] Depending on the embodiment, the arrangement of the substrates within the substrate holder is asymmetrical with respect to the longitudinal axis of the reaction chamber 120.

[0245] In some embodiments, the outermost substrate 130 in the batch, i.e., the substrate 130 whose surface faces either the upper or lower wall of the reaction chamber 120 during processing, is spaced from the wall by substantially the same distance as the distance between all the substrates 130 in the batch. Advantageously, the environment experienced by the uppermost wafer is essentially the same as the environment experienced by the lowermost wafer and the wafers in the stack.

[0246] In some embodiments, the outermost surfaces of the two outermost substrates 130 face the upper wall of the reaction chamber 120 and the bottom surface of the substrate holder 140 located above the lid 180, respectively.

[0247] In some embodiments, the substrate holder 140 does not have a base plate 1330 between the lid 180 and the nearest substrate 130. In this case, one of the flat surfaces of the substrate directly faces the lid 180. The lid 180 forms the bottom wall of the reaction chamber 120 in the processing state.

[0248] In some embodiments, the distance between the outer surface of the outermost substrate 130 in the batch and the wall of the reaction chamber 120, or the distance between the outer surface and the bottom surface of the substrate holder 140, is not equal to the distance between substrates inside the substrate holder 140.

[0249] In some embodiments, the distance from the outermost substrate surface to the wall of the reaction chamber 120 (and / or the bottom surface or lid 180 of the substrate holder 140) is greater than the distance between slots.

[0250] In some embodiments, the distance between the uppermost outermost substrate 130 and the wall of the reaction chamber 120 is equal to the distance between the lowermost outermost substrate 130 and the wall of the reaction chamber 120.

[0251] In some embodiments, the distance between the uppermost outermost substrate 130 and the wall of the reaction chamber 120 is not equal to the distance between the lowermost outermost substrate 130 and the wall of the reaction chamber 120. Advantageously, by controlling the distance to the wall of the reaction chamber 120, the gas flow to the outermost substrate surface 130 can be controlled.

[0252] In some embodiments, the vertical element 1310 of the substrate holder 140 has a greater overall height than the substrate stack and is in contact with the wall of the reaction chamber 120 during processing.

[0253] In some embodiments, the vertical member 1310 is in contact with the ceiling of the reaction chamber 120 (from the end opposite to the end where the substrate holder 140 is connected to the lid 180).

[0254] In some embodiments, the vertical member 1310 is in contact with the floor of the reaction chamber 120 (from the end opposite to the end where the substrate holder 140 is connected to the lid 180). Advantageously, the uppermost and lowermost substrates 130 can have similar processing conditions.

[0255] Figure 18a schematically shows that the vertical member 1310 of the substrate holder 140 is configured to maintain a uniform distance between substrates (i.e., the spacing between ridges). In this example, the distance from the top and bottom substrates 130 to the wall of the reaction chamber 120 or the base plate 1330 is different from the distance between substrates in the stack. Furthermore, the distance from the top substrate 130 to the reaction chamber wall is greater than the distance from the bottom substrate 130 to the base plate 1330. As a result, the arrangement of substrates is not mirror-symmetric with respect to the central axis 730 of the reaction chamber 120.

[0256] Figure 18b shows the vertical element 1310 of the substrate holder 140. This extends from the base plate 1330 to the roof of the reaction chamber in the processing state. However, the distance from the uppermost substrate 130 to the roof is configured to be different from the distance from the lowermost substrate 130 to the base plate 1330. Therefore, the arrangement of the substrates is not mirror-symmetric with respect to the longitudinal axis of the reaction chamber 120. The distances between substrates in the substrate stack are equal.

[0257] Figure 18c shows the vertical element 1310 of the substrate holder 140, which extends from the base plate 1330 to the roof of the reaction chamber in the processing state. The substrate arrangement is mirror symmetric with respect to the longitudinal axis of the reaction chamber 120. The ridges 1320 configured to hold the substrates 130 in the stack are not equally spaced. The distance between the ridges 1320 is shorter closer to the longitudinal axis 730 of the reaction chamber and longer further away from the axis 730. The distance from the top substrate 130 to the roof is equal to the distance from the bottom substrate 130 to the base plate 1330, except that this distance between the substrate and the wall is different from any other distance between the substrates.

[0258] Figure 18d shows how the vertical member 1310 of the substrate holder 140 extends from the base plate 1330 to the roof of the reaction chamber 120 during processing. The ridge spacing of the substrate holder 140 is not mirror-symmetric with respect to the vertical axis 730. That is, the distance between substrates is shorter at the bottom and longer at the top. However, the distance from the uppermost substrate 130 to the roof is equal to the distance from the lowermost substrate 130 to the base plate 1330.

[0259] Figure 19 shows a schematic representation of the substrate processing system. System 1900 is configured to process and manufacture substrates under clean vacuum conditions.

[0260] In some embodiments, the substrate processing system includes a receiving module 1910. The receiving module 1910 is configured to load substrates 130 (e.g., wafers) into the substrate processing system 1900. The substrates are also unloaded from the substrate processing system 1900 via the receiving module 1910.

[0261] Depending on the embodiment, the reception module 1910 includes a Front Opening Unified Pod (FOUP) or similar device and an Equipment Front End Module (EFEM).

[0262] In some embodiments, the substrate processing system 1900 includes a transport unit 1920. This transport unit includes a robotic system for moving the substrates 130 between modules without exposing them to the external environment of the substrate processing system 1900.

[0263] In some embodiments, the substrate processing system 1900 includes a heating module 1930. The heating module 1930 is configured to heat the substrate 130 that has been transported by the transport unit 1920.

[0264] In some embodiments, the substrate 130 is heated before it is transferred to the processing module 1950.

[0265] Depending on the embodiment, the substrate 130 is transferred to the heating module 1930 between processing cycles of the processing module 1950.

[0266] In some embodiments, the substrate processing system 1900 includes a cooling module 1940. The cooling module 1940 is configured to cool the substrate 130 that has been transported by the transport unit 1920.

[0267] In some embodiments, the substrate 130 is heated in the heating module 1930 and then cooled in the cooling module 1940 before being transferred to the processing module 1950 or removed from the system 1900.

[0268] The substrate processing system 1900 includes a processing module 1950.

[0269] In some embodiments, the processing module 1950 is an ALD module.

[0270] In some embodiments, the processing module 1950 includes the laminar flow reaction chamber 120 described above.

[0271] In some embodiments, the processing module 1950 includes a substrate lifting system configured to transport the substrate 130 between an loading / unloading state and a processing state.

[0272] In some embodiments, the processing module 1950 includes a vertically movable substrate rotation system 500. That is, the processing module 1950 may include, for example, a vertically movable substrate processing system 500, a fluid distributor 600, and a reaction chamber 120 configured to accommodate and process up to 30 substrates.

[0273] In some embodiments, after a processing cycle or processing stage, the substrate 130 is transferred from the processing module 1950 to another module by a transfer unit 1920, rotated 180 degrees (in a plane), and then returned to the processing module 1950 for further processing.

[0274] In some embodiments, the heating module 1930 is provided with a rotating mechanism (of the type shown or a simpler rotating mechanism) 1935. Thus, in some embodiments, after a processing cycle or processing stage, the substrate 130 is transferred from the processing module 1950 to the heating module 1930 by the transfer unit 1920, where it is heated. It is then rotated 180 degrees in a plane and returned to the processing module 1950 for further processing.

[0275] In some embodiments, the rotation of the substrate 130 is performed without heating. That is, in some embodiments, the heating module 1930 can function as a rotation module.

[0276] Depending on the embodiment, the substrate processing system 1900 includes a dedicated rotary module (other than the heating module 1930).

[0277] A dedicated rotating module or a heating module 1930 with a rotating function allows the substrate 130 to be processed evenly from opposite directions in two processing cycles without the need to rotate it within the processing module 1950 or the reaction chamber 120. In the first processing cycle or phase, the fluid reaches the substrate from the first end, and after rotation, in the second processing cycle or phase, it reaches the substrate from the direction of the second end opposite to the first end. Advantageously, the processing module 1950 can be kept simple. Furthermore, the advantages of rotating the substrate 130 can be achieved, at least partially, without the substrate lifting and rotating system 500 in the processing module 1950.

[0278] Depending on the embodiment, the substrate processing system 1900 comprises a plurality of processing modules 1950.

[0279] According to some embodiments, at least some of the processing modules include a laminar flow reaction chamber 120.

[0280] Overall, by the substrate processing system 1900, the substrate 130 is effectively handled under highly controlled clean conditions.

[0281] FIG. 20 shows a flowchart of substrate processing according to a specific embodiment. In step 2001, a plurality of substrate wafers are loaded into a substrate holder that has been moved to the loading / unloading position in a vacuum chamber by a loading robot under vacuum.

[0282] According to some embodiments, since 5 substrates are loaded at a time, after 6 loading cycles, the substrate holder accommodates a total of 30 substrates. In other embodiments, the number of substrates loaded at a time may be different. In step 2002, the substrate holder supporting the substrates is moved to the processing position in the reaction chamber (accommodated in the vacuum chamber).

[0283] According to some embodiments, the substrates are arranged horizontally within a vertical stack (substrate stack). In step 2003, the lid of the reaction chamber is closed. (However, according to some embodiments, the lid may be left partially open.)

[0284] According to some embodiments, since the substrate holder constitutes the lid of the reaction chamber, when the substrate holder moves to the processing position, the substrate holder closes the reaction chamber. (According to some embodiments, the reaction chamber is sealed.) In step 2004, a deposition process step is performed (according to some embodiments, these may include etching).

[0285] Depending on the embodiment, the processing steps include an ALD or MLD deposition step. The processing steps are performed under laminar flow conditions established by the apparatus configuration as described above. According to the method of one embodiment, in step 2004(i), a pulse of precursor vapor of a first precursor is introduced into the reaction chamber (pulse A). The precursor vapor flows through the substrate stack as laminar flow and adheres to the substrate surface by chemiadsorption, forming half of the first monolayer of the deposit in a self-saturating (self-limiting) manner. Following step 2004(i), a first purging period (purge A) is performed. During this period, in step 2004(ii), an inert gas flows through the substrate stack and the substrate surface is purged. In step 2004(iii), following step 2004(ii), a pulse of precursor vapor of a second precursor is introduced into the reaction chamber (pulse B). The precursor vapor flows through the substrate stack as laminar flow and adheres to the substrate surface by chemiadsorption, forming the first complete monolayer of the deposit. Step 2004(iii) is followed by the first purging period (Purge B). During this period, in step 2004(iv), an inert gas flows through the substrate stack, purging the substrate surface. This completes the first processing cycle. The processing cycle is repeated as many times as necessary to obtain the desired deposition film thickness. During deposition, the substrate stack (or substrate holder supporting the substrate) is rotated within the reaction chamber to improve uniformity.

[0286] In some embodiments, the substrate stack is rotated continuously (for example, at a constant rotational speed). In some embodiments, the rotation includes step rotations. For example, an indexing mechanism is used to rotate, for example, 90 degrees or 180 degrees at a time.

[0287] In some embodiments, the substrate stack rotates 180 degrees once during the deposition process, or rotates 90 degrees every quarter of the complete deposition sequence. Once the deposition process is complete (by repeating the processing cycle to obtain the desired thickness of the deposited material and completing the deposition sequence), the reaction chamber lid is opened in step 2005. In step 2006, the substrate holder is moved to the loading / unloading position (inside the vacuum chamber or in the intermediate space between the reaction chamber and the vacuum chamber), and the substrates are removed from the reaction chamber. In certain embodiments where the substrate holder constitutes the reaction chamber lid, the lid opens when the substrate holder is moved to the loading / unloading position. Finally, in step 2007, the substrates are removed from the substrate holder (under vacuum) by a loading robot (for example, five substrates are removed at a time). In other specific embodiments, instead of processing a stack of substrates, only a single substrate is processed in the reaction chamber.

[0288] Figure 21 shows a flowchart of substrate processing according to another specific embodiment. The method shown in Figure 21 is consistent with the method shown in Figure 20, except that the rotation is performed outside the reaction chamber instead of inside the reaction chamber. Thus, in step 2101, one or more substrates are loaded into a substrate holder, which has been moved under vacuum by a loading robot to the loading / unloading position in the vacuum chamber. In steps 2102 and 2103, the substrate holder is moved into the reaction chamber (housed in the vacuum chamber) to the processing position and the lid of the reaction chamber is closed (as mentioned above, these steps may be performed simultaneously). In step 2104, the film deposition process is performed.

[0289] Depending on the embodiment, the processing steps include an ALD or MLD deposition step. The processing steps are performed under laminar flow conditions established by the apparatus configuration as described above. According to the method of one embodiment, in step 2104(i), a pulse of precursor vapor of the first precursor is introduced into the reaction chamber (pulse A). Step 2104(i) is followed by a first purge period (purge A) (step 2104(ii)). In step 2104(iii), following step 2104(ii), a pulse of precursor vapor of the second precursor is introduced into the reaction chamber (pulse B). In step 2104(iv), following step 2104(iii), a first purge period (purge B) is followed. These processing cycles are repeated half the number of times required for a complete deposition sequence. The reaction chamber lid is then removed, and the substrate is taken out of the reaction chamber. The substrate is rotated 180 degrees outside the reaction chamber and returned to the reaction chamber (step 2105). Subsequently, the second half of the deposition cycle is executed (step 2106). Once the deposition process is complete (the processing cycle is repeated to obtain the desired deposition material thickness and complete the deposition sequence), the reaction chamber lid is opened. The substrate holder is then moved to the loading / unloading position, and the substrate is removed from the reaction chamber (steps 2107 and 2108, which may occur simultaneously). Finally, in step 2109, the loading robot removes the substrate from the substrate holder (under vacuum).

[0290] The 180-degree rotation during processing is performed, for example, by transferring the substrate to another deposition apparatus module or cluster and rotating it there. In certain embodiments, the other module includes a rotation mechanism such as an indexing mechanism. Thus, in certain embodiments, the other module may be a heating module 1930 or a similar module. In other specific embodiments, the 180-degree rotation is performed by a loading robot. In such embodiments, the loading robot receives the substrate from the substrate holder (in the loading / unloading state), rotates the substrate 180 degrees, and returns the substrate to the substrate holder (for transfer to the reaction chamber for further processing). The loading robot may be part of the robotic system of the transfer unit 1920.

[0291] In some embodiments, when a TiO2 thin film was deposited from a titanium-containing precursor (TiCl4) and an oxygen-containing precursor (H2O or O3), it was confirmed that the uniformity of the thin film improved when the substrate (sample) was rotated 180 degrees during the deposition process compared to a non-rotated sample.

[0292] Without limiting the technical scope and interpretation of the claimed invention, one or more technical effects of the exemplary embodiments disclosed herein are listed below. One technical effect is to avoid deposition defects resulting from the irregular deposition rate of substrates in the stack. This irregularity arises from the possibility of non-uniform or turbulent flow of the precursor fluid between substrates, which is a common problem in conventional chemical vapor deposition reactors. Another technical effect is to achieve more uniform thin film deposition than conventional methods, even when using less-than-ideal ALD chemical reactions.

[0293] We have presented various embodiments. The words "to have," "to possess," and "to include" should be interpreted in an open-ended manner and do not exclude the existence of other elements.

[0294] The above description provides a complete and useful description of the best mode for carrying out the present invention as currently envisioned by the inventors, using non-limiting examples of specific implementations and embodiments. However, as will be apparent to those skilled in the art, the details of the embodiments described above are not limiting to the present invention and may be implemented in other embodiments using equivalent means or various combinations of embodiments without departing from the features of the present invention.

[0295] Furthermore, the features of the exemplary embodiments disclosed above may be used without the use of other corresponding features. However, the above description should be understood as merely an example to illustrate the principles of the present invention and not as a limiting factor. The scope of the present invention is limited only by the appended claims.

Claims

1. A reaction chamber in which multiple substrates are arranged and housed with their faces facing each other; A fluid distributor that establishes a laminar flow of fluid that propagates from the inlet to the reaction chamber, through the reaction chamber, and between the multiple substrates; A vertically movable substrate rotation system configured to move the plurality of substrates in a direction perpendicular to the substrate surface between the loading / unloading state and the processing state, and to rotate the plurality of substrates within the reaction chamber in the processing state; A substrate processing apparatus comprising:

2. The substrate processing apparatus according to claim 1, wherein the fluid distributor is configured to diffuse the fluid flow that has entered from the inlet to the width of the reaction chamber before the fluid enters the reaction chamber.

3. The fluid distributor has a diffusion space comprising a plurality of diffusion regions, in each of the plurality of diffusion regions, a fluid flows in through at least one inlet located in the diffusion region, and the fluid flow propagates laterally while diffusing through the diffusion region, and also propagates in a direction opposite to the fluid flow flowing in from other diffusion regions; Furthermore, the fluid distributor has a transition region, and the fluid flows that reach the transition region from each of the plurality of diffusion regions are mixed in the transition region, and the transition region is configured to guide the mixed flow as a laminar flow to the reaction chamber; A substrate processing apparatus according to any of the preceding claims.

4. The substrate processing apparatus according to any of the preceding claims, wherein the fluid distributor is configured to diffuse the fluid flow in a direction parallel to the height of a substrate stack formed by a plurality of substrates arranged so that their surfaces face each other.

5. The substrate processing apparatus according to any of the preceding claims, wherein the fluid distributor comprises a transition region that is mirror-symmetric with respect to the longitudinal axis of the reaction chamber.

6. The substrate processing apparatus according to any one of claims 1 to 5, wherein the transfer region of the fluid distributor is not mirror-symmetric with respect to the longitudinal axis of the reaction chamber.

7. A substrate processing apparatus according to any of the preceding claims, comprising an external housing that houses, or at least partially houses, the reaction chamber, wherein the external housing is configured to position the substrate in the loading / unloading state.

8. The substrate processing apparatus according to claim 7, configured to maintain a pressure difference between the reaction chamber and the external housing during substrate processing.

9. A substrate processing apparatus according to any of the preceding claims, comprising a reaction chamber lid integrated into the vertically movable substrate rotation system.

10. The substrate processing apparatus according to claim 9, wherein a gap is maintained between the reaction chamber lid and the reaction chamber during the processing state so that fluid communication is maintained between the reaction chamber and the external housing even during substrate processing.

11. The substrate processing apparatus according to any of the preceding claims, wherein the liftable substrate rotation system comprises a rotation shaft within the lifting shaft.

12. The substrate processing apparatus according to any of the preceding claims, wherein the lifting shaft is configured to move perpendicular to the longitudinal axis of the reaction chamber, and the longitudinal axis is parallel to the direction of laminar flow within the reaction chamber.

13. A substrate processing apparatus according to any of the preceding claims, wherein the substrate in the reaction chamber is configured to rotate in a plane perpendicular to the lifting axis.

14. The aforementioned vertically adjustable substrate rotation system comprises a rotary motor for rotating the substrate and a vertical motor for moving the substrate between a loading / unloading state and a processing state. The rotary motor and the lifting motor are arranged outside the reaction chamber and the external housing. A substrate processing apparatus according to any of the preceding claims.

15. A liftable substrate rotation system for a substrate processing apparatus according to any of the prior claims, A lifting mechanism having a lifting shaft that can be attached to the lid of the reaction chamber for moving the substrate in a direction perpendicular to the surface of the substrate between the loading / unloading state and the processing state; A rotating mechanism having a rotating shaft for rotating the substrate within the reaction chamber, independently of the aforementioned lifting shaft; A height-adjustable substrate rotation system equipped with the above features.

16. A vertically movable substrate rotation system according to claim 15, comprising a rotation axis within the lifting axis.

17. The lid of the reaction chamber and; A rotatable substrate holder positioned on one side of the lid, opposite to the lifting axis, configured to accommodate multiple substrates arranged so that their faces face each other; The vertically adjustable substrate rotation system according to claim 15 or 16, comprising, wherein the rotation axis is configured to rotate the substrate by rotating the substrate holder.

18. A liftable substrate rotation system according to any one of claims 15 to 17, comprising a vacuum feedthrough.

19. The liftable substrate rotation system according to any one of claims 15 to 18, wherein the lid is equipped with a positioning tension spring configured to tightly and uniformly adhere to the reaction chamber in the processing state.

20. The process involves loading multiple substrates into the reaction chamber of a substrate processing apparatus as a substrate stack within a substrate holder, wherein the multiple substrates are arranged so that their surfaces face each other within the substrate stack; In the reaction chamber, multiple substrates are rotated in a laminar flow of the precursor; Methods that include...

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