Semiconductor light-emitting device, and method for manufacturing a semiconductor light-emitting device

Abstract

To provide a semiconductor light-emitting device that has high light output efficiency and whose light output is maintained because reflectivity of a lead frame is not easily degraded by corrosion.SOLUTION: An insulating connecting member 13 that adheres a bottom surface of a light-emitting element 12 to a top surface of a first electrode 11a is light reflective, extends to an area outside of a rectangular outline of the light-emitting element 12, and covers a portion of an area outside of the light-emitting element 12 on the surface of the first electrode 11a.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a semiconductor light-emitting device having a structure in which a semiconductor light-emitting element is fixed on a lead frame by an adhesive member and the periphery is sealed with resin.

Background Art

[0002] A semiconductor light-emitting device having a configuration in which a semiconductor light-emitting element is fixed on a lead frame by an adhesive member is known. For example, in Patent Documents 1 and 2, on a lead frame, a semiconductor light-emitting element is fixed by an adhesive member, and a light-reflective thermosetting resin frame formed by transfer molding is mounted at a position separated from the semiconductor light-emitting element by a predetermined distance. A semiconductor light-emitting device having a structure in which a transparent resin containing a phosphor substance is filled between the semiconductor light-emitting element and the frame is disclosed.

[0003] In a semiconductor light-emitting device having such a structure, part of the light emitted from the semiconductor light-emitting element is reflected by the frame and the other part is reflected by the surface of the lead frame and emitted upward. Therefore, in order to improve the emission efficiency from above, it is disclosed that the surface of the lead frame is subjected to metal plating such as silver and aluminum to improve the reflection efficiency.

Prior Art Documents

Patent Documents

[0004] <B

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0005] Silver and aluminum-plated lead frames can corrode due to oxygen, moisture, nitrogen oxides, and sulfur oxides in the atmosphere, reducing the reflectivity of the lead frame surface and potentially decreasing the light output of the light-emitting device. Therefore, applying corrosion-resistant gold plating can prevent the decrease in light reflectivity due to corrosion of the lead frame. However, gold-plated lead frames have low reflectivity for blue light, which can reduce the light output of the light-emitting device.

[0006] The object of the present invention is to provide a semiconductor light-emitting device that can maintain light output even when the lead frame is gold-plated to prevent corrosion, and that is less susceptible to the effects of reduced reflectivity due to corrosion even when the lead frame surface is not gold-plated to prevent corrosion. [Means for solving the problem]

[0007] To achieve the above objective, the semiconductor light-emitting device of the present invention comprises a resin molded body having a recess, a pair of electrodes made of a lead frame disposed within the resin molded body with a portion of its surface exposed at the bottom of the recess, a light-emitting element mounted on the first electrode of the pair of electrodes, and an insulating connecting member that adheres the bottom surface of the light-emitting element to the top surface of the first electrode. The connecting member is light-reflective. The connecting member extends to a region outside the rectangular outer shape of the light-emitting element and covers a portion of the region on the surface of the first electrode that is outside the light-emitting element. [Effects of the Invention]

[0008] According to the present invention, since a portion of the light emitted from the side of the light-emitting element is reflected by a light-reflective connecting member that extends outward from the light-emitting element, the light output can be maintained even in a structure in which the lead frame is gold-plated to prevent corrosion, and even in a structure in which the lead frame surface is not gold-plated to prevent corrosion, the light output can be maintained as the device is less affected by the decrease in reflectivity due to corrosion of the lead frame surface. [Brief explanation of the drawing]

[0009] [Figure 1] (a), (b), (c), and (d) are a top view, a long-side side view, a short-side side view, and a rear view of the semiconductor light-emitting apparatus of Embodiment 1, respectively, and (e) is a cross-sectional view. [Figure 2] (a) is a top view of an example of a light-emitting element of the semiconductor light-emitting device of Embodiment 1, and (b) is a cross-sectional view. [Figure 3] (a) and (b) are diagrams showing the directivity of the light-emitting element of the semiconductor light-emitting device of Embodiment 1. [Figure 4] (a) and (b) are a top view and a cross-sectional view of a part of the semiconductor light-emitting apparatus of Embodiment 1, respectively. [Figure 5] (a) is a top view of the lead frame of the semiconductor light-emitting apparatus of Embodiment 1, and (b) to (d) are cross-sectional views of the lead frame. [Figure 6] This is a flowchart showing the manufacturing process of the semiconductor light-emitting device 1 of Embodiment 1. [Figure 7] This is a top view showing the manufacturing process of the semiconductor light-emitting device 1 of Embodiment 1. [Figure 8] This is a top view showing the manufacturing process of the semiconductor light-emitting device 1 of Embodiment 1. [Figure 9] This is a top view showing the manufacturing process of the semiconductor light-emitting device 1 of Embodiment 1. [Figure 10] This is a top view showing the manufacturing process of the semiconductor light-emitting device 1 of Embodiment 1. [Figure 11] This is a top view showing the manufacturing process of the semiconductor light-emitting device 1 of Embodiment 1. [Figure 12] (a) to (c) and (e) are cross-sectional views showing the manufacturing process of the semiconductor light-emitting device 1 of Embodiment 1, and (d) is a top view. [Figure 13] This is a top view showing the manufacturing process of the semiconductor light-emitting device 1 of Embodiment 1. [Figure 14] This is a top view showing the manufacturing process of the semiconductor light-emitting device 1 of Embodiment 1. [Figure 15] This is a top view showing the manufacturing process of the semiconductor light-emitting device 1 of Embodiment 1. [Figure 16]It is a table showing the optical outputs of the semiconductor light-emitting devices of Embodiment 1 and Comparative Example 1.

Embodiments for Carrying Out the Invention

[0010] A semiconductor light-emitting device according to an embodiment of the present invention will be described below.

[0011] (Embodiment 1) The configuration of the semiconductor light-emitting device 1 of Embodiment 1 will be described with reference to FIGS. 1 to 5. FIGS. 1(a), (b), (c), and (d) are respectively a top view, a long-side side view, a short-side side view, and a bottom view of the semiconductor light-emitting device 1, and FIG. 1(e) is a cross-sectional view. FIG. 2(a) is a top view of an example of a light-emitting element, and FIG. 2(b) is a cross-sectional view. FIGS. 3(a) and (b) are diagrams showing the directivity of the light-emitting element. FIGS. 4(a) and (b) are a top view and a cross-sectional view of a part of the semiconductor light-emitting device 1, and also show the optical path. FIGS. 5(a) to (d) are a top view and a cross-sectional view of a lead frame. Note that FIGS. 1, 2, 4, and 5 are hatched in the top view to make the structure easier to understand.

[0012] As shown in FIG. 1, the semiconductor light-emitting device 1 of Embodiment 1 includes a frame body 10 which is a resin molded body, a pair of electrodes 11a and 11b made of a lead frame, a light-emitting element 12, an insulating adhesive member 13, and a sealing member 15.

[0013] [[ID=二十一]] [[ID=二十二]] [[ID=二十三]]

[0014] [[ID=二十四]] ​The pair of electrodes 11a and 11b have the first electrode 11a as the cathode and the second electrode 11b as the anode. The surfaces of the pair of electrodes 11a and 11b are plated with gold (Au), which has corrosion resistance and reflective properties that result in a higher reflectivity of light longer than blue light.

[0015] The light-emitting element 12 is, for example, a semiconductor light-emitting element that emits blue light with a main wavelength of 440 nm to 460 nm, and is mounted on the first electrode 11a of a pair of electrodes 11a and 11b exposed at the bottom of the recess.

[0016] The adhesive member 13 has reflective properties that reflect light in the visible light band and is positioned between the bottom surface of the light-emitting element 12 and the top surface of the first electrode 11a, bonding the two together. Furthermore, the adhesive member 13 extends from the space between the bottom surface of the light-emitting element 12 and the top surface of the first electrode 11a to a region outside the rectangular outline of the light-emitting element 12. As a result, the adhesive member 13 extending to the region outside the light-emitting element 12 covers a portion of the surface of the first electrode 11a that is outside the light-emitting element 12.

[0017] The upper surface of the light-emitting element 12 is provided with an n-side electrode pad (cathode) 21a and a p-side electrode pad (anode) 21b, which are element electrodes. One end of the first bonding wire 14a is connected to the n-side electrode pad 21a. The other end of the first bonding wire 14a is connected to the upper surface of the first electrode 11a in an area not covered by the adhesive member 13. The p-side electrode pad 21b is connected to one end of the second bonding wire 14b. The other end of the second bonding wire 14b is connected to the upper surface of the second electrode 11b. As a result, a drive current is supplied to the light-emitting element 12 from the first electrode 11a and the second electrode 11b via the first bonding wire 14a and the second bonding wire 14b.

[0018] The sealing member 15 is filled into the recess of the frame 10 so as to embed the light-emitting element 12 and the first bonding wire 14a and the second bonding wire 14b.

[0019] The sealing member 15 is made of a resin that is transparent to the light emitted by the light-emitting element 12, in which a light-converting element is dispersed. The light-converting element absorbs a portion of the light emitted from the light-emitting element 12 and emits light with a longer wavelength than the absorbed light. For example, it is a phosphor that emits yellow light, which is the complementary color of the blue light emitted by the light-emitting element 12. The portion of the sealing member 15 that is exposed from the recess of the frame 10 (the upper surface) is the light-emitting surface FO of the light-emitting device 1.

[0020] (The function of each part during light emission) When a drive current is supplied to the light-emitting element 12 from the first electrode 11a and the second electrode 11b via the first bonding wire 14a and the second bonding wire 14b, the light-emitting element 12 emits primary light from the top surface and secondary light from the sides (see Figure 3).

[0021] As shown in Figure 3(a), the primary light is emitted upward from the top surface of the light-emitting element 12. The secondary light is emitted from each of the four sides of the light-emitting element 12. The secondary light is light (secondary light) that has been guided in the in-plane direction within the growth substrate of the light-emitting element 12, and its intensity is greatest in the axial direction perpendicular to the side surface and the center of each side of the light-emitting element 12.

[0022] As shown in Figure 4(b), the principal light (E1, E3) is emitted upward from the light-emitting element 12. A portion (E1) passes through the sealing member 15 and is emitted upward as is, while the other portion (E3) is irradiated onto the wavelength conversion member, where its wavelength is converted, and it passes through the sealing member 15 and is emitted upward.

[0023] On the other hand, of the secondary light (E2, E4), secondary light E2, which is emitted from the side of the light-emitting element 12 diagonally downward, is reflected by the surface of the adhesive member 13 of the light-emitting element 12 and directed upward, as shown in Figure 4(b). Along the way upward, a portion of secondary light E2 has its wavelength converted by the wavelength conversion member, and another portion of secondary light E2 is further reflected by the frame 10 and directed upward.

[0024] Since the secondary light E4 is emitted from the light-emitting element 12 diagonally upward, it does not reach the adhesive member 13, but passes through the sealing member 15, and some of it has its wavelength converted by the wavelength conversion member and is directed upward either directly or reflected by the frame 10.

[0025] The phosphor particles, excited by the light emitted from the light-emitting element 12, emit yellow light in all directions. At this time, the light P3 emitted upward is emitted from the light-emitting surface FO of the light-emitting device 1, while the light P4 (yellow light) emitted downward is reflected by the surfaces of the adhesive member 13 and the first and second electrodes 11a and 11b, and emitted from the light-emitting surface FO of the light-emitting device 1.

[0026] Furthermore, based on the above explanation, the effect can be expected even when the sealing member 15 does not include a wavelength conversion member, or when the wavelength conversion member converts all of the light emitted from the light-emitting element 12.

[0027] Thus, in the semiconductor light-emitting device 1 of this embodiment 1, the secondary light emitted from the side of the light-emitting element 12 that is emitted diagonally downward is reflected by the adhesive member 13. As a result, it is no longer affected by the reflection characteristics of the first electrode 11a and the second electrode 11b, which are plated with corrosion-resistant metal plating (gold plating in this case), and the light output of the semiconductor light-emitting device 1 can be improved.

[0028] Furthermore, by setting the wavelength of light (fluorescence) emitted from the light conversion members dispersed in the sealing member 15 to a wavelength with high reflectivity in the reflective properties of the corrosion-resistant metal plating, the light output of the semiconductor light-emitting device 1 can be improved.

[0029] (Shape and material of adhesive components) The shape of the adhesive member 13, etc., for improving the reflection efficiency of secondary light will be explained in detail below.

[0030] The adhesive member 13 is positioned beneath the light-emitting element 12 to bond the light-emitting element 12 to the upper surface of the first electrode 11a, and extends beyond the rectangular outline of the light-emitting element 12 to reflect secondary light emitted from the side of the light-emitting element 12.

[0031] The periphery of the adhesive member 13 is a rectangle with rounded corners, as shown in Figure 1(a), and is larger than the light-emitting element 12. When viewed from above, the periphery of the adhesive member 13 is a sector (an isosceles triangle with rounded corners) or a parabola, with one side of the light-emitting element 12 as the base.

[0032] In other words, the adhesive member 13 and the light-emitting element 12 have the same center O position, and the corners of the adhesive member 13 are offset by 45 degrees from the corners of the light-emitting element 12. Furthermore, the shape of the periphery of the adhesive member 13 does not have to be a perfect rectangle with rounded corners; the sides of the rectangle may curve gently outward.

[0033] In other words, the distance from one side of the rectangular outer shape of the light-emitting element 12 to the periphery of the adhesive member is greatest at the center of one side of the light-emitting element 12, and decreases as it approaches both ends of the side.

[0034] Furthermore, the periphery of the adhesive member 13 has a curved shape in a predetermined range that includes the position with the greatest distance from one side of the light-emitting element 12, and constitutes the rounded corner of the adhesive member 13.

[0035] In other words, the periphery of the adhesive member 13 extends furthest outward at the center of the four sides of the light-emitting element 12, and is closest to the light-emitting element 12 at the corners of the light-emitting element 12.

[0036] By shaping the adhesive member 13 as described above, the secondary light from the light-emitting element 12, which has an intensity distribution as shown in Figure 3(b), can be efficiently reflected. In addition, bonding spaces BS not covered by the adhesive member 13 can be secured on the first electrode 11a and the second electrode 11b for connecting the bonding wires 14a and 14b to the first electrode 11a and the second electrode 11b.

[0037] Furthermore, it is preferable that the total area of ​​the adhesive member 13 is at least twice the area of ​​the bottom surface of the light-emitting element 12.

[0038] Specifically, if we define L1 (= 1 / 2 of the side length) as the distance from the center O of the light-emitting element 12 to its edge, and L2 as the distance from the center O to the corner of the adhesive member 13 (the intersection point X of the virtual extensions of adjacent edges of the adhesive member 13), then the adhesive member 13 is (2·(2L1) 2 ≤(√2·2L) 2 It is desirable that the following relationship be satisfied. The upper limit is the area in which the bonding space BS does not disappear, or three times that area or less.

[0039] Furthermore, when the adhesive member 13 and the light-emitting element 12 are viewed from above, it is desirable that the contour of the light-emitting element 12 be inside the periphery of the adhesive member 13. In particular, it is desirable that the periphery of the adhesive member 13 be located outside the corners of the light-emitting element 12 by a width W of 0.1 times the length of one side of the light-emitting element 12 (0.1·2L1≦W).

[0040] Therefore, as shown in Figure 4(a), it is desirable that the distance L3 (distance between the center O and the intersection X) from the light-emitting element 12 to the periphery of the adhesive member 13 at the center of one side of the light-emitting element 12 is equal to or greater than the distance L1 (= 1 / 2 of the length of one side) from the center O of the light-emitting element 12 to the side.

[0041] Furthermore, the region (bottom surface) of the adhesive member 13 located below the light-emitting element 12 is thick enough to bond the light-emitting element 12 to the first electrode 11a with a predetermined strength, and is also thick enough to reflect light emitted from the bottom surface of the light-emitting element 12 and re-incidentate it into the light-emitting element 12.

[0042] As shown in Figure 4(b), the cross-sectional shape of the region of the adhesive member 13 outside the light-emitting element 12 is convex. That is, the cross-sectional shape of the adhesive member 13 extends from the position in contact with the side surface of the light-emitting element 12 so as to rise above the plane parallel to the surface of the first electrode 11a, and then becomes lower at the periphery of the adhesive member 13, reaching the surface of the first electrode 11a. Furthermore, the height of the portion of the adhesive member 13 in contact with the side surface of the light-emitting element 12 is set to be 1 / 3 or less of the height of the light-emitting element 12. This makes it possible to improve the light output of the light-emitting device 1 without blocking the secondary light emitted from the side surface of the light-emitting element 12.

[0043] The adhesive member 13 is formed from a composite resin in which light-reflective particles are dispersed in a light-transmitting medium resin.

[0044] The bonding medium can be a translucent polysilsesquioxane (siloxane compound) resin having hardness that prevents the bonding pressure from being relieved during wire bonding, which is performed after the light-emitting element 12 is bonded to the first electrode 11a of the lead frame (first and second electrodes 11a, 11b). In addition, a silsesquioxane derivative resin of the trioxysilane type can also be used.

[0045] The light-reflective particles can be titanium oxide particles with a particle size of 5 nm to 500 nm. These particles reflect visible light from blue to red (diffuse reflection). By making the particle size distribution of the light-reflective particles wider than the particle size in the Mie scattering region (200 nm to 300 nm in visible light), smaller particles can be interspersed between larger particles, thereby increasing the hardness of the adhesive member 13. Furthermore, a high reflectivity can be obtained. In addition, alumina (Al2O3) and zinc oxide (ZnO) may also be used as light-reflective particles.

[0046] (Shape and material of the first and second electrodes) The first and second electrodes 11a and 11b (lead frames) have the shapes shown in Figures 1 and 5. The core material is copper (Cu) or a copper alloy, and a plating layer (Ni / Au) is formed on the surface by laminating nickel and gold layers in that order. Aluminum (Al) or an aluminum alloy, or an iron-nickel alloy (Fe-Ni 42%, Fe-Ni 29%-Co 17%) can also be used as the core material.

[0047] (Frame shape and material) The frame 10 is formed by insert molding or other techniques using a resin in which light-reflective particles are dispersed, resulting in a shape with a recess in the center as shown in Figure 1.

[0048] As the resin, for example, a dioxide sylanone-based silicone resin, epoxy resin, or acrylic resin can be used.

[0049] As light-reflective particles, for example, titanium oxide particles with a particle size of 200 nm to 300 nm can be used. Additives such as short-fiber glass and nanosilica particles may also be added.

[0050] (Shape and material of light-emitting elements) The light-emitting element 12 can have any structure as long as it emits blue light of a desired wavelength from its top and side surfaces. Here, the light-emitting element shown in Figure 2, which emits blue light, is used. Note that the effect of the present invention increases as the amount of secondary light emitted from the side surfaces of the light-emitting element increases.

[0051] The light-emitting element 12 in Figure 2 has a structure in which a translucent substrate (sapphire) is used as the growth substrate 22, and an n-nitride layer as an n-type semiconductor layer 23, a multiple quantum well structure (MQW) light-emitting layer 24, a p-nitride layer as a p-type semiconductor layer 25, and a translucent p-side electrode 26 are stacked on top of it. A p-side electrode pad (anode) 21b is mounted on a part of the upper surface of the translucent p-side electrode 26. In addition, an n-side electrode pad 21a, which has the function of an n-side electrode, is mounted on a part of the upper surface of the exposed n-type semiconductor layer 23. The area on the upper surface where the p-side electrode pad 21b and n-side electrode pad 21a are not provided is covered with a protective film 28. Furthermore, if necessary, a reflective dielectric multilayer film or a metal element reflection layer 27 may be placed on the lower surface of the growth substrate 22.

[0052] (Material of sealing material) The sealing member 15 is formed by dispersing a wavelength conversion member in a medium resin that transmits light emitted by the light-emitting element 12. In this case, silicone resin was used as the medium resin and YAG green-yellow phosphor was used as the wavelength conversion member.

[0053] As the medium resin, any of the following can be used: silicone resin, epoxy resin, or acrylic resin.

[0054] As the wavelength conversion component, a material that absorbs and excites the blue light emitted by the light-emitting element 12 and emits light with a longer wavelength than blue-green light can be selected and used. For example, LuAG green phosphor, β-type SiALON green phosphor, CASN red phosphor, S-CASN red phosphor, KFS red phosphor, YAG green-yellow phosphor, orthosilicate green-yellow phosphor can be used. In addition, cadmium selenide (CdSe) nanoparticles, indium phosphide (InP) nanoparticles, and indium nitride (InN) QD (Quantum Dot) wavelength converters can also be used. Note that the QD wavelength converter may be applied directly to the surface of the light-emitting element 12.

[0055] (Manufacturing method) The manufacturing method for the semiconductor light-emitting device 1 of Embodiment 1 will be explained using the process diagram in Figure 6 and Figures 7 to 15. Here, an example of plating the first and second electrodes 11a and 11b with Au will be described.

[0056] (Step S1: Half-etching process) Prepare a copper plate as shown in Figure 7, and form a resist mask on the back of the copper plate as shown in Figure 8 so that the area to be half-etched is exposed. Etch the copper plate using an etching solution until it is about half its original thickness.

[0057] (Step S2: Cutting out the mold) As shown in Figure 9, a predetermined area of ​​the copper plate is punched out and removed using a mold to form the areas that will become the first and second electrodes 11a and 11b. This forms a lead frame in which multiple first and second electrodes 11a and 11b are connected.

[0058] Alternatively, instead of punching, a lead frame may be formed by etching away a predetermined area. In this case, a resist mask is formed covering the areas of the first and second electrodes 11a and 11b. The areas not covered by the resist mask can be etched with an etching solution until the copper plate is completely removed.

[0059] (Step S3: Plating process) As shown in Figure 10, the lead frame surface is plated with Ni and then Au.

[0060] (Step S4: Frame Forming Process) The frame 10 is formed as shown in Figure 11 by insert molding, in which a lead frame is placed in a mold, a resin containing dispersed light-reflective particles is heated and poured in, and then cured.

[0061] (Step S5: Implementation Process) As shown in Figure 12(a), an uncured resin containing light-reflective particles that will form the adhesive member 13 is applied to the upper surface of the first electrode 11a. At this time, the amount of resin applied is predetermined and applied using a nozzle or the like so that when the adhesive member 13 is pressed and spread by the light-emitting element 12, its area can spread to about twice the area of ​​the light-emitting element 12.

[0062] As shown in Figure 12(b), the light-emitting element 12 is held with a tool and slowly placed on the uncured adhesive member 13, and then pressed down. As a result, as shown in Figures 12(c) and (d), the uncured adhesive member 13 is pushed outwards not only from directly beneath the light-emitting element 12 but also from beyond the light-emitting element 12. At this time, the adhesive member 13 in the area outside the light-emitting element 12 will have a convex cross-sectional shape. Applying ultrasonic vibration at this time can suppress the protrusion of the cross-sectional shape while pushing it outwards. Alternatively, a similar effect can be obtained by blasting and roughening the surface to which the adhesive member 13 is applied.

[0063] Next, the adhesive member 13 is heated (for example, 150°C for 30 minutes) to harden it, forming an adhesive member 13 that extends to the outside of the light-emitting element 12 in a predetermined shape.

[0064] This ensures that the center O of the adhesive member 13 and the light-emitting element 12 are approximately aligned. Furthermore, the adhesive member 13 can be formed to be approximately rectangular with rounded corners when viewed from above, with the corners positioned 45 degrees apart from the corners of the light-emitting element 12.

[0065] Next, as shown in Figure 12(e), bumps are formed on the upper surfaces of the p-side electrode pad 21b and the n-side electrode pad 21a of the light-emitting element 12. Then, the first and second bonding wires 14a and 14b are wire-bonded to connect the p-side electrode pad 21b and the n-side electrode pad 21a, and the first and second electrodes 11a and 11b to the first and second bonding wires 14a and 14b.

[0066] As a result, as shown in Figure 13, the light-emitting element 12 is mounted on the first and second electrodes 11a and 11b, and the adhesive member 13 is extended to the outside of the light-emitting element 12 and formed into a predetermined shape.

[0067] (Step S6: Sealing process) An uncured sealing member 15 containing dispersed phosphor is injected into the recess of the frame 10, embedding the area around the light-emitting element 12, the exposed upper surface of the adhesive member 13, the exposed upper surfaces of the first and second electrodes 11a and 11b, and the first and second bonding wires 14a and 14b.

[0068] Subsequently, the sealing member 15 is cured by heat treatment (for example, 150°C for 30 to 150 minutes).

[0069] As a result, a continuous body is formed in which multiple semiconductor light-emitting devices 1 are connected by lead frames and frame bodies 10, as shown in Figure 14.

[0070] (Step S7: Separation process) As shown in Figure 15, the individual semiconductor light-emitting devices 1 are separated into pieces by dicing them along their respective outlines.

[0071] (Step S8: Power-on check process) Finally, the individual semiconductor light-emitting devices 1 are powered on to check their performance, and the semiconductor light-emitting device 1 is completed.

[0072] Thus, in the manufacturing process of the semiconductor light-emitting device 1 of this embodiment, the amount of adhesive member 13 to be applied is designed in advance, and by spreading it with the light-emitting element 12 while it is still uncured, the adhesive member 13 and the light-emitting element 12 can be formed so that their center O positions coincide, and the adhesive member 13 is a rectangle with rounded corners, with the corner positions offset by 45 degrees from the corner positions of the light-emitting element 12.

[0073] (Comparative Example 1) As shown in the right-hand figure of Figure 16, the semiconductor light-emitting device of Comparative Example 1 had an amount of adhesive member 13 (adjustable amount) that provided sufficient adhesive strength to bond the light-emitting element 12 to the upper surface of the first electrode 11a. In this amount, the adhesive member 13 protrudes from the side of the light-emitting element 12 by a width approximately equal to the height of the light-emitting element 12 when viewed from above. Such a semiconductor light-emitting device was manufactured in step S5, with an appropriate amount of uncured adhesive member 13 applied to the upper surface of the first electrode 11a.

[0074] (Optical output of Embodiment 1 and Comparative Example 1) When the optical output of the semiconductor light-emitting device of Embodiment 1 and the semiconductor light-emitting device of Comparative Example 1 were measured, the semiconductor light-emitting device of Embodiment 1 had an output of 3300 mcd, while Comparative Example 1 had an output of 3000 mcd, confirming that the semiconductor light-emitting device of Embodiment 1 had an optical output that was more than 10% higher.

[0075] This result is because, compared to the semiconductor light-emitting device of this embodiment 1, in the semiconductor light-emitting device of Comparative Example 1, a portion of the secondary light emitted from the side of the light-emitting element 12 was absorbed by the surface (Au) of the first electrode 11a, resulting in a decrease in the light output of the light-emitting device.

[0076] (Embodiment 2) The semiconductor light-emitting device of Embodiment 2 has a structure in which the outermost surfaces of the first and second electrodes 11a and 11b of the semiconductor light-emitting device 1 of Embodiment 1 are replaced with Ag instead of Au. Such a semiconductor light-emitting device can be manufactured by applying Ni / Ag plating to the first and second electrodes 11a and 11b in the plating process of step S3.

[0077] (Comparative Example 2) The semiconductor light-emitting device of Comparative Example 2 has a structure in which the outermost surfaces of the first and second electrodes 11a and 11b of the semiconductor light-emitting device 1 of Embodiment 1 are replaced from Au to Ag, and the adhesive member 13 protrudes from the side of the light-emitting element 12 by a width approximately equal to the height of the light-emitting element 12 when viewed from above. In other words, it is a configuration in which the outermost surfaces of the first and second electrodes 11a and 11b of the semiconductor light-emitting device of Comparative Example 1 are replaced from Au to Ag. Such a semiconductor light-emitting device can be manufactured by applying Ni / Ag plating to the first and second electrodes 11a and 11b in the plating process of step S3, and by adjusting the amount of uncured adhesive member 13 applied to the upper surface of the first electrode 11a in the mounting process of step S5 to an appropriate amount for adhesion.

[0078] (Optical output of Embodiment 2 and Comparative Example 2) The semiconductor light-emitting device of Embodiment 2 and the semiconductor light-emitting device of Comparative Example 2 were subjected to corrosion tests in accordance with the sulfurization test JEITA ED-4912A, and the light output before and after corrosion was measured. The results are shown in Table 1.

[0079] [Table 1]

[0080] As shown in Table 1, the first and second electrodes 11a and 11b (lead frames) with Ag plating have high reflectivity in the visible light band, but they blacken and their reflectivity decreases as they undergo sulfidation (corrosion). However, the semiconductor light-emitting device of Embodiment 2 maintained 85% of its pre-corrosion light output even after corrosion due to sulfidation. In contrast, the semiconductor light-emitting device of Comparative Example 2 had decreased to 58% of its pre-corrosion light output.

[0081] The reason why the decrease in the light output of the semiconductor light-emitting device in Embodiment 2 is suppressed to 85% is that the adhesive member 13 extends from the side surface of the light-emitting element 12, and the reflection of the secondary light emitted from the side surface of the light-emitting element 12 is maintained by the adhesive member 13. In other words, the attenuation can be limited to the amount corresponding to the area in contact between the first and second electrodes 11a and 11b, which have been corroded (blackened) by sulfidation, and the sealing member 15.

[0082] Thus, in the semiconductor light-emitting device of this embodiment 2, the secondary light emitted from the side of the light-emitting element 12 that is emitted diagonally downward is reflected by the adhesive member 13. Therefore, even if the first electrode 11a and the second electrode 11b are corroded by oxygen, moisture, nitrogen oxides, or sulfur oxides in the atmosphere, they are less affected by the decrease in reflectivity of their surfaces. As a result, a decrease in the light output of the semiconductor light-emitting device can be suppressed.

[0083] As described above, in this embodiment, a portion of the light emitted from the side of the light-emitting element is reflected by a light-reflective connecting member that extends outward from the light-emitting element. Therefore, even if the lead frame is gold-plated to prevent corrosion, the light output can be maintained, and even if the lead frame is not gold-plated to prevent corrosion, the light output can be maintained without being affected by the decrease in reflectivity due to corrosion of the lead frame surface.

[0084] The semiconductor light-emitting device technology of this embodiment can be applied to a wide range of applications, including EMC (Epoxy Molding Compound) packages and SMC (Silicone Molding Compound) packages. [Explanation of symbols]

[0085] O center W width 1. Semiconductor light-emitting device 10 Frame 11a electrode 11b Electrode 12 Light-emitting elements 13 Adhesive members 14a First bonding wire 14b Second bonding wire 15 Sealing member 21a n-side electrode pad 21b p-side electrode pad 22 Growth substrate 23 n-type semiconductor layer 24. Emitting layer 25 p-type semiconductor layer 26 p side electrode 27-element reflective layer 28 Protective film

Claims

1. A resin molded body having a recess, A pair of electrodes, each consisting of a lead frame disposed within the resin molded body and having a portion of its surface exposed at the bottom of the recess, A light-emitting element mounted on the first electrode of a pair of electrodes exposed at the bottom of the recess, The device has an insulating connecting member that adheres the bottom surface of the light-emitting element to the top surface of the first electrode, The aforementioned connecting member is light-reflective, The connecting member has a shape that extends to a region outside the rectangular outer shape of the light-emitting element, and covers a portion of the region on the surface of the first electrode that is outside the light-emitting element. The semiconductor light-emitting device is characterized in that the outer shape of the connecting member is a rectangle with rounded corners and is larger than the light-emitting element, the center positions of the connecting member and the light-emitting element coincide, and the position of the corners of the connecting member is offset by 45 degrees from the position of the corners of the light-emitting element.

2. A semiconductor light-emitting device according to claim 1, characterized in that the distance from one side of the rectangular outer shape of the light-emitting element to the periphery of the connecting member is greatest at the center of one side of the light-emitting element and decreases as it approaches both ends of the side.

3. A semiconductor light-emitting device according to claim 1, characterized in that the total area of ​​the connecting member is at least twice the area of ​​the bottom surface of the light-emitting element.

4. A semiconductor light-emitting apparatus according to claim 1, wherein the connecting member has a convex cross-sectional shape in the region outside the light-emitting element.

5. A semiconductor light-emitting apparatus according to claim 1, characterized in that light-reflective particles are dispersed in the connecting member.

6. A semiconductor light-emitting device according to claim 1, characterized in that the upper surfaces of the pair of electrodes exposed at the bottom of the recess are silver-plated.

7. A semiconductor light-emitting device according to claim 1, characterized in that the upper surfaces of the pair of electrodes exposed at the bottom of the recess are gold-plated.

8. A semiconductor light-emitting apparatus according to claim 1, wherein the resin molded body and the light-emitting element are sealed with a sealing resin that transmits light emitted by the light-emitting element, and the sealing resin covers the connecting member that extends to the outside of the light-emitting element and the surface of the electrode that is not covered by the connecting member.

9. A semiconductor light-emitting device according to claim 1, wherein the resin molded body and the light-emitting element are sealed between them by a sealing resin that transmits light emitted by the light-emitting element, and the sealing resin contains a light conversion member that absorbs a portion of the light emitted from the light-emitting element and emits light with a longer wavelength than the absorbed light.

10. A step of applying a predetermined amount of uncured light-reflective resin onto an electrode consisting of a lead frame placed inside a resin molded body having a recess, with a portion of its surface exposed at the bottom of the recess, A step is to mount a light-emitting element on the uncured light-reflective resin, and to spread the uncured light-reflective resin with the light-emitting element, thereby forming a connecting member that extends to an area outside the rectangular outer shape of the light-emitting element and covers a portion of the area on the electrode surface outside the light-emitting element, while simultaneously bonding the bottom surface of the light-emitting element to the top surface of the electrode. It has, The connecting member formed in the bonding step has an outer shape that is a rectangle with rounded corners, is larger than the light-emitting element, the center positions of the connecting member and the light-emitting element coincide, and the position of the corners of the connecting member is offset by 45 degrees from the position of the corners of the light-emitting element. A method for manufacturing a semiconductor light-emitting device, characterized by the above.

Images