Semiconductor light-emitting device and method for manufacturing the same

Abstract

To provide a semiconductor light-emitting device which has high light emission efficiency, prevents reflectance of a lead frame from being lowered by corrosion, and maintains optical output.SOLUTION: A frame body is formed of a thermoplastic resin along the edge of an upper face of a lead frame, and simultaneously first and second dams for partitioning a region surrounded by the frame body into first, second, and third regions are formed. A light-emitting element is die-bonded into the second region. A pair of electrodes of the light-emitting element are wire-bonded to the upper face of the lead frame in the first and second regions. The insides of the first and second regions are filled with a first sealing member. The light-emitting element and the first sealing member are filled with a second sealing member so as to cover the light-emitting element and the first sealing member. The heights of the first and second dams are lower than the upper surface of the light-emitting element. A coefficient of thermal expansion of the first sealing member is a value between a coefficient of thermal expansion of the second sealing member and a coefficient of thermal expansion of the lead frame.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a semiconductor light-emitting device having a structure in which a semiconductor light-emitting element is fixed on a lead frame by an adhesive member and the periphery is sealed with resin.

Background Art

[0002] Semiconductor light-emitting devices having a structure in which a semiconductor light-emitting element and a resin frame surrounding the periphery thereof are mounted on a lead frame and a space surrounded by the frame including the semiconductor light-emitting element is sealed with a sealing resin are known from Patent Documents 1 to 3 and the like. This type of semiconductor light-emitting device has a problem that the lead frame, the frame, and the sealing resin are likely to peel off.

[0003] Therefore, Patent Document 1 discloses that by providing recesses around the region of the lead frame where the semiconductor light-emitting element is mounted and on the inner periphery of the frame and filling the recesses with resin, the adhesion between the lead frame and the frame or the sealing resin is improved.

[0004] Further, in Patent Documents 2 and 3, in a structure in which a thermosetting resin is formed into a frame by transfer molding, as a technique for improving the adhesion between the thermosetting resin and the lead frame, Patent Document 2 discloses a structure in which a notch is provided in the lead frame, and Patent Document 3 discloses a structure in which a recess is provided in the lead frame in a top view.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0006] The technology described in Patent Document 1 has a structure in which recesses are formed around the area on which the semiconductor light-emitting element of the lead frame is mounted, and the resin of the resin part (frame) is filled into these recesses. However, a lead frame with such recesses has reduced strength, which impairs the reliability of the light-emitting device.

[0007] Furthermore, although the technologies described in Patent Documents 2 and 3 have notches or recesses in the lead frame, the sealing resin is in contact with areas other than the mounting area of ​​the light-emitting element on the upper surface of the lead frame, and may peel off due to the heat generated by the light-emitting element.

[0008] The object of the present invention is to provide a semiconductor light-emitting device and a method for manufacturing the same, which have high adhesion between the lead frame and the sealing resin and are highly reliable. [Means for solving the problem]

[0009] To achieve the above objective, the semiconductor light-emitting device of the present invention comprises a lead frame, a frame mounted along the edge of the upper surface of the lead frame, first and second weirs dividing the area of ​​the upper surface of the lead frame enclosed by the frame into first, second, and third regions, a light-emitting element die-bonded to the upper surface of the lead frame in the central second region by an adhesive member, bonding wires connecting a pair of upper electrodes of the light-emitting element to the upper surfaces of the lead frame in the first and second regions, respectively, a first sealing member made of light-reflective resin filling the first and second regions up to the height of the first and second weirs, and a second sealing member made of resin containing phosphors, filling the frame so as to cover the light-emitting element and the first sealing member. The height of the first and second weirs is lower than the upper surface of the light-emitting element. The frame and the first and second weirs are made of a resin mixture containing light-reflective particles. The thermal expansion coefficient of the first sealing member is a value between the thermal expansion coefficient of the second sealing member and the thermal expansion coefficient of the lead frame. [Effects of the Invention]

[0010] According to the present invention, it is possible to provide a semiconductor light-emitting device and a method for manufacturing the same that have high adhesion between the lead frame and the sealing resin, and are highly reliable. [Brief explanation of the drawing]

[0011] [Figure 1] (a), (b), and (c) are a top view, a long-side view, and a short-side view of the semiconductor light-emitting device 1 of Embodiment 1, (d) is a cross-sectional view along the long axis of the semiconductor light-emitting device 1, (e) is a cross-sectional view along the short axis, and (f) is a top view during the manufacturing process. [Figure 2] This is a flowchart showing the manufacturing process of the semiconductor light-emitting device of Embodiment 1. [Figure 3] (a) to (c) are top views showing the manufacturing process of the semiconductor light-emitting device of Embodiment 1. [Figure 4] (a) to (c) are top views showing the manufacturing process of the semiconductor light-emitting device of Embodiment 1. [Figure 5] (a), (b), and (c) are a top view, a long-side view, and a short-side view of the semiconductor light-emitting device 1 of Embodiment 2, (d) is a cross-sectional view along the long axis of the semiconductor light-emitting device 1, (e) is a cross-sectional view along the short axis, and (f) is a top view during the manufacturing process. [Modes for carrying out the invention]

[0012] The semiconductor light-emitting device of one embodiment of the present invention is described below.

[0013] <<Embodiment 1>> The configuration of the semiconductor light-emitting device 1 of Embodiment 1 will be explained using Figures 1(a) to (f). Figures 1(a), (b), and (c) are a top view, a side view along the long side, and a side view along the short side of the semiconductor light-emitting device 1. Figure 1(d) is a cross-sectional view along the long axis of the semiconductor light-emitting device 1, and Figure 1(e) is a cross-sectional view along the short axis. Figure 1(f) is a top view of the semiconductor light-emitting device 1 with the first sealing member and the second sealing member removed. Note that in Figures 1(a), (b), (c), and (f), hatching is applied to parts that are not cross-sections in order to make the structure easier to understand.

[0014] As shown in FIGS. 1(a) to 1(f), the semiconductor light-emitting device 1 of Embodiment 1 is provided with a frame body 10 along the periphery of a pair of flat lead frames 11 and having a rectangular concave portion such that one surface of the lead frame 11 becomes the bottom surface, and a light-emitting element 12 is placed on the bottom surface via an adhesive member 13. Further, the concave portion is filled with a first sealing member 15 and a second sealing member 16.

[0015] In the following description, one surface of the lead frame 11 on which the light-emitting element 12 is placed is defined as the upper surface, and the direction on that surface is referred to as upward. Also, the opposite surface of the upper surface of the lead frame 11 is defined as the lower surface, and the direction on that surface is referred to as downward.

[0016] The frame body 10 is a resin mixture that forms a rectangular concave portion and has the property of reflecting light in the visible light band. The joint portion of the frame body 10 with the lead frame 11 is formed so as to also wrap around the side surface of the edge of the long side of the lead frame 11 as shown in FIG. 1(e). Specifically, the frame body 10 extends from the upper surface and wraps around to the step 30 provided on the side surface of the lead frame 11, enhancing the adhesion between the lead frame 11 and the frame body 10. Also, the frame body 10 is formed such that the edges of the short sides of the lead frame 11 protrude from the frame body 10. The protruding portion of the lead frame 11 serves as a solder fillet forming portion when mounting the semiconductor light-emitting device 1 onto a circuit board.

[0017] The lead frame 11 is a rectangular flat plate having an upper surface and a lower surface parallel to the upper surface, and is divided by a gap 11c parallel to the short-axis direction, forming a pair of electrodes 11a and 11b. The gap 11c is filled with a resin mixture extending from the frame body 10.

[0018] On the upper surface of the lead frame 11 surrounded by the frame body 10, first and second dams 17a and 17b extending from the inner peripheral surface of the frame body 10 parallel to the short-axis direction of the lead frame 11 are arranged at intervals, partitioning the upper surface region of the lead frame 11 surrounded by the frame body 10 into three regions: a first region 110a, a second region 110b, and a third region 110c.

[0019] The widths of the weirs 17a and 17b are narrower at the upper surface than at the lower surface, and the cross-section in the width direction is formed in a tapered shape.

[0020] In the central second region 110b sandwiched between the first weir 17a and the second weir 17b, the second electrode 11b of the lead frame 11 is located, and a light-emitting element 12 is joined (die-bonded) to the upper surface thereof by an insulating adhesive member 13. The adhesive member 13 covers the entire lower surface of the light-emitting element 12 and the upper surface of the second region 110b.

[0021] In the first region 110a sandwiched between the first weir 17a and the frame body 10, the gap 11c, the first electrode 11a, and the second electrode 11b of the lead frame 11 are located. One end of a bonding wire 18a is connected to the upper surface of the first electrode 11a in the first region 110a, and the other end of the bonding wire 18a is connected to one of a pair of upper surface electrodes (not shown) of the light-emitting element 12.

[0022] Also, on the upper surface of the first electrode 11a in the first region 110a, the back surface electrode of a Zener diode (ZD) 19 for protecting the light-emitting element is joined (die-bonded) by a conductive adhesive such as solder. The upper surface electrode (not shown) of the Zener diode (ZD) 19 is connected to the upper surface of the second electrode 11b in the first region 110a by a bonding wire 20.

[0023] On the other hand, in the third region 110c sandwiched between the second weir 17b and the frame body 10, the second electrode 11b of the lead frame 11 is located. One end of a bonding wire 18b is connected to the upper surface of the second electrode 11b in the third region 110c, and the other end of the bonding wire 18b is connected to the other of the pair of upper surface electrodes of the light-emitting element 12.

[0024] In the first region 110a sandwiched between the first dam 17a and the frame 10, a first sealing member 15 made of the same or equivalent resin mixture as the adhesive member 13 is uniformly filled up to the height of the first dam 17a. As a result, the lower ends of the Zener diode (ZD) 19 and bonding wire 18a are embedded in the first sealing member 15.

[0025] Similarly, the third region 110c, sandwiched between the second dam 17b and the frame 10, is also uniformly filled with the first sealing member 15 up to the height of the second dam 17b. As a result, the lower end of the bonding wire 18b is embedded in the first sealing member 15.

[0026] The adhesive member 13 is a rigid resin mixture that provides sufficient adhesive strength to prevent the light-emitting element 12 from easily falling off, and that does not reduce the force applied when bonding the bonding wires 18a and 18b to the pair of upper electrodes (not shown) of the light-emitting element 12. The adhesive member 13 is also a resin mixture that reflects light in the visible light band. In this embodiment, the same resin mixture is also used for the first sealing member 15 that embeds the first region 110a and the third region 110c.

[0027] The second sealing member 16 covers the upper and side surfaces of the light-emitting element 12 in the second region 110b, the upper surface of the adhesive member 13, the upper surface of the first sealing material 15 which embeds the first region 110a and the third region 110c, and the bonding wires 18a and 18b. The second sealing member 16 is filled up to the upper end of the frame 10, and its upper surface is a flat surface substantially parallel to the upper surface of the lead frame 11. The second sealing member is a resin mixture containing phosphor particles as a wavelength conversion member in a medium resin that transmits light in the visible light band.

[0028] In a semiconductor light-emitting device 1 with such a structure, the heights of the first and second weirs 17a and 17b are lower than the frame 10, and it is particularly desirable that they be below the height of the upper surface of the light-emitting element 12. By making the heights of the first and second weirs 17a and 17b below the height of the upper surface of the light-emitting element 12, the portions of the bonding wires 18a and 18b that are close to the ends connected to the upper surface of the light-emitting element 12 can be stretched almost parallel to and close to the upper surface of the lead frame 11, thereby reducing the height of the second sealing member 16 (height of the frame 10) and making the height (thickness) of the semiconductor light-emitting device 1 smaller (thinner). Furthermore, by reducing the height of the second sealing member 16, the stress caused by the coefficient of thermal expansion that occurs in response to temperature changes can be reduced.

[0029] Furthermore, by making the heights of the first and second weirs 17a and 17b equal to the top surface of the light-emitting element 12, the sides of the first and second weirs 17a and 17b are tapered, allowing the light emitted from the sides of the light-emitting element 12 to be reflected by the first and second weirs 17a and 17b, and emitted from the top surface of the second sealing member 16. This improves the light output of the semiconductor light-emitting device 1.

[0030] Furthermore, the adhesive member 13 and the first sealing member 15 are composed of a resin mixture, and the thermal expansion coefficient of this resin mixture is between the thermal expansion coefficient of the lead frame 11 and the thermal expansion coefficient of the second sealing member 16. That is, the thermal expansion coefficient is, Lead frame 11 < Adhesive member 13 = First sealing member 15 < Second sealing member 16 They are in a relationship of ,

[0031] In other words, an adhesive member 13 and a first sealing member 15, having thermal expansion coefficients between the thermal expansion coefficients of the second sealing member 16 and the lead frame 11, are arranged between them. To put it another way, the second sealing member 16 is not in direct contact with the upper surface of the lead frame 11, and the configuration is such that one interface with a large difference in thermal expansion coefficients is dispersed between two interfaces with a small difference in thermal expansion coefficients. As a result, for example, when the semiconductor light-emitting device 1 is in use, even if the temperature of the second sealing member 16, adhesive member 13, first sealing member 15, and lead frame 11 rises due to the heat emitted by the light-emitting element 12, causing thermal expansion, the stress caused by the difference in thermal expansion coefficients between the lead frame 11 and the second sealing member 16 can be dispersed and reduced by the adhesive member 13 and the first sealing member 15 across the two interfaces.

[0032] Therefore, even if the interface between the lead frame 11 and the frame 10 peels off, the interface between the subsequent lead frame and the adhesive member 13 and the first sealing resin 15 does not peel off. As a result, moisture or corrosive gases entering from the peeled area do not reach the joint between the light-emitting element 12 and the bonding wire and the lead frame 11, preventing a decrease in the light output or failure of the light-emitting device 1. In other words, a highly reliable light-emitting device can be provided.

[0033] Furthermore, the adhesive member 13 and the first sealing member 15 are made of a resin mixture, and the hardness of this resin mixture is between the hardness of the lead frame 11 and the hardness of the second sealing member 16. That is, the hardness is Second sealing member 16 < Adhesive member 13 = First sealing member 15 < Lead frame 11 They are in a relationship of ,

[0034] In other words, an adhesive member 13 and a first sealing member 15 having hardness values ​​between the hardnesses of the second sealing member 16 and the lead frame 11 are arranged between the second sealing member 16 and the lead frame 11. To put it another way, the second sealing member 16 is configured so that it does not directly contact the upper surface of the lead frame 11, and one interface with a large difference in hardness is transformed into two interfaces with a small difference in hardness. As a result, even if the temperature of the second sealing member 16, adhesive member 13 and first sealing member 15, and lead frame 11 rises due to heat generated by the light-emitting element 12 of the semiconductor light-emitting device 1, causing thermal expansion, the deformation concentration on the lower-hardness second sealing member 16 side is distributed across the two interfaces by the adhesive member 13 and first sealing member 15, and deformation concentration on the second sealing member 16 side is suppressed.

[0035] Therefore, even if the interface between the lead frame 11 and the frame 10 peels off, the interface between the subsequent lead frame and the adhesive member 13 and the first sealing resin 15 does not peel off. As a result, moisture or corrosive gases entering from the peeled area do not reach the joint between the light-emitting element 12 and the bonding wire and the lead frame 11, preventing a decrease in the light output or failure of the light-emitting device 1. In other words, a highly reliable light-emitting device can be provided.

[0036] Furthermore, by providing the first and second dams 17a and 17b, the thickness of the first sealing member 15 in the first region 110a and the third region 110c can be increased, thereby enhancing the function of the first sealing member 15 as a buffer layer against thermal expansion.

[0037] Furthermore, the second region 110b has increased bending strength in the longitudinal direction of the light-emitting device 1 due to the placement of the light-emitting element 12. In contrast, the first region 110a and the third region 110c are weak in bending strength, but their bending strength can be increased because the sealing member 15 can be made thicker.

[0038] In this way, the adhesive member 13 and the first sealing member 15 improve the mechanical strength of the upper surface of the lead frame 11 of the light-emitting device 1, thereby preventing the lead frame 11 from peeling off from the frame 10.

[0039] Furthermore, by providing the first and second weirs 17a and 17b, when bonding the light-emitting element 12 to the central second region 110b, it is possible to prevent the adhesive member 13 from wetting and spreading to the first region 110a and the third region 110c on both sides, which are the connection areas of the bonding wires 18a and 18b.

[0040] On the other hand, when filling the first sealing member 15 into the first and third regions 110a and 110c on both sides, it is possible to prevent the first sealing member 15 from reaching the light-emitting element 12. Therefore, the sides of the light-emitting element 12 are not covered and shielded from light by the first sealing member 15. In other words, attenuation of the light output of the light-emitting device 1 can be prevented.

[0041] The following provides a more detailed explanation of the materials used for each component.

[0042] (Lead frame 11) The lead frame 11 uses Cu as the core material and has a plating layer (Ni / Au) on its surface, which consists of a Ni layer and an Au layer laminated in that order, providing resistance to corrosive gases. The core material can also be Al or an iron alloy (Fe-Ni-Co). Alternatively, a plating layer (Ni / Ag) can be used, which consists of a Ni layer and an Ag layer laminated in that order, providing high reflectivity across the entire visible light band.

[0043] The thermal expansion coefficient of Cu, the core material of the lead frame, is 17.8 ppm (1 / °C). Its hardness is 120 HV on the Vickers scale.

[0044] In particular, by forming a plating layer with an Au layer on its surface, the corrosion resistance of the Au layer prevents the lead frame 11 from corroding in environments with high concentrations of nitrogen oxides and sulfur oxides in the atmosphere. Therefore, it is possible to suppress the progression of corrosion from the exposed end of the interface between the lead frame 11 and the frame 10 into the interior. In other words, it is possible to prevent delamination starting from the corroded area.

[0045] (light-emitting element 12) As the light-emitting element 12, a semiconductor light-emitting device (LED) is used that includes an n-type semiconductor layer, a light-emitting layer, and a light-emitting functional layer having a p-type semiconductor layer, and emits light of a desired wavelength from visible light to infrared light. In this embodiment, a light-emitting functional layer that emits blue light is used on the upper surface of a translucent and insulating sapphire substrate, and a pair of upper electrodes are provided on the upper surface side of the light-emitting functional layer.

[0046] (Frame 10) The resin mixture constituting the frame 10 uses a translucent polycyclohexylene dimethylene terephthalate (PCT) resin as the medium resin, in which light-reflective titanium dioxide (TiO2) particles are dispersed.

[0047] As the resin medium, for example, a thermoplastic modified polycyclohexylene dimethylene terephthalate (PCT) resin with good moldability, or a thermosetting dialkyl silicone resin, epoxy resin, or acrylic resin that does not soften after molding can also be used.

[0048] As light-reflecting particles, TiO2 particles with a size of 200-300 nm that Mie-scatter visible light are preferred. The amount added is preferably 16 wt% or more to achieve high light-shielding properties. The upper limit of the amount added is preferably 60 wt% or less so as not to impair moldability. Fine particles, short fibers, etc., can also be added to improve the strength of the frame 10.

[0049] (Adhesive member 13) As the adhesive member 13, a resin mixture is used in which titanium oxide (TiO2) particles are dispersed as aggregate in a polysilsesquioxane (PSQ) resin as the medium resin.

[0050] The adhesive medium resin of the adhesive member 13 has the composition formula [(RSiO 1.5 Polysilsesquioxane (PSQ) resin, represented as [(R2SiO)n](R: alkyl group, n: integer), is a resin containing 1.5 oxygen atoms in its unit composition formula. It possesses properties between those of the organic silicone resin [(R2SiO)n] and the inorganic silica [SiO2], exhibiting high heat resistance, a low coefficient of thermal expansion, and high hardness.

[0051] Furthermore, when oxide ceramic particles such as alumina (Al2O3), zirconia (ZrO2), and titanium dioxide (TiO2) are mixed with PSQ resin, they bond with the PSQ resin in a siloxane bond and function as aggregate. This reduces the thermal expansion coefficient of the PSQ resin mixture and increases its hardness. In addition, by mixing in white oxide ceramic particles, the visible light reflectance can be increased to approximately 70% to 95%. In the examples, a PSQ resin mixture mixed with white titanium dioxide particles with a particle size of 1 nm to 500 nm was used, resulting in a lower thermal expansion coefficient, higher hardness, and higher visible light reflectance compared to the medium resin.

[0052] The thermal expansion coefficient of the PSQ medium resin in the adhesive member 13 is 188 ppm (1 / °C). Furthermore, its hardness (JIS K 6253 durometer type D (Shore D)) is D75.

[0053] (First sealing member 15) The first sealing member 15 was made of the same resin mixture as the adhesive member 13. Specifically, the medium resin was made of the composition formula [(RSiO 1.5 The first sealing member 15 is formed using a resin mixture in which a polysilsesquioxane (PSQ) resin represented by )n](R: alkyl group, n: integer) is used as a medium resin and titanium oxide (TiO2) particles are dispersed as aggregate. Alternatively, a resin mixture having similar properties to that of the adhesive member 13 can also be used.

[0054] (Second sealing member 16) As the second sealing member 16, a resin mixture is used in which YAG phosphor particles are dispersed in a dimethyl-based silicone resin as the medium resin as a wavelength conversion member.

[0055] Thermosetting resins such as silicone resin, epoxy resin, and acrylic resin can be used as the medium resin.

[0056] As the wavelength conversion element, a phosphor that is excited by light from the light-emitting element 12 and emits desired fluorescence can be used. For example, β-SiAlON, KFS(K2SiF6:Mn 4+ ), CASN(CaAlSiN3:Eu), S-CASN((Sr, Ca)AlSiN3:Eu), and YAG(Y3Al5O 12 :Ce 3+ ) etc. One type or a mixture of multiple types of phosphors can be used. The particle size is set to 5 to 30 μm, which is high in absorption efficiency of the light emitted by the light-emitting element 12.

[0057] The thermal expansion coefficient of the medium resin in the second sealing member 16 is 212 ppm (1 / °C). Its hardness (JIS K 6253 durometer type A (Shore A)) is A65-A78.

[0058] As described above, the thermal expansion coefficient of the medium resin in the second sealing member 16 is 212 ppm (1 / °C), the thermal expansion coefficient of the medium resin in the adhesive member 13 and the first sealing member 15 is 188 ppm (1 / °C), and the thermal expansion coefficient of Cu, the core material of the lead frame, is 17.8 ppm (1 / °C). Therefore, the respective thermal expansion coefficients are: Lead frame 11 < Adhesive member 13 = First sealing member 15 < Second sealing member 16 It satisfies the relationship.

[0059] Furthermore, the hardness of the medium resin in the second sealing member 16 is A65-A78 (equivalent to D20-D30 in the D range), the hardness of the medium resin in the adhesive member 13 and the first sealing member 15 is D75, and the hardness of the Cu core material of the lead frame is 120HV (greater than or equal to the maximum value in the D range). Therefore, the respective hardnesses are: Second sealing member 16 < Adhesive member 13 = First sealing member 15 < Lead frame 11 It satisfies the relationship.

[0060] Furthermore, since the resin mixture of the adhesive member 13 and the first sealing member 15 is a mixture of PSQ resin and white titanium oxide, its thermal expansion coefficient is smaller than that of the medium resin alone, and its hardness is also high.

[0061] (Manufacturing method) Next, the manufacturing method of the semiconductor light-emitting device 1 will be explained using the flowchart in Figure 2, Figures 3(a) to (c), and Figure 4.

[0062] First, prepare a copper (Cu alloy) plate that will serve as the lead frame.

[0063] (Step S1) The copper plate is punched out using a die capable of forming multiple pre-prepared lead frames 11, and processed into a shape with multiple continuous lead frames 11 as shown in Figure 3(a).

[0064] In addition to the method of punching out with a die, a resist mask may also be formed and the material may be punched out by etching.

[0065] (Step S2) Nickel (Ni) and gold (Au) are layered in that order on the upper surface of the portion that will become the lead frame 11 of the copper plate punched out in step S1 by electroplating.

[0066] (Step S3) Next, the plated lead frame 11 is fixed to a mold in which the portion that will become the frame 11 is formed. Subsequently, a PCT resin mixture (thermoplastic resin) containing titanium oxide particles with a particle size of 200-300 nm is heated and softened, and injected into the mold (injection molding) to simultaneously form the frame 10 and the first and second dams 17a and 17b on the lead frame 11, as shown in Figure 3(b).

[0067] The thermoplastic PCT resin mixture does not penetrate between the mold and the surface (top surface) of the lead frame 11, which will be the first region 110a to the third region 110c, even when melted at high temperatures. Therefore, it is preferable that the surface (top surface) of the lead frame 11, which will be the first region 110a to the third region 110c, does not need to be cleaned after the frame 10 is molded.

[0068] For example, if the frame 10 is made of a thermosetting silicone resin mixture, the mixture may penetrate between the mold and the surface (top surface) of the lead frame 11, which will be the first region 110a to the third region 110c, and the resin mixture may adhere to the surface (top surface) of the lead frame 11, which will be the first region 110a to the third region 110c. In this case, the frame 10 is molded by insert molding and then cleaned. Cleaning methods include water blasting and electrolysis cleaning.

[0069] (Step S4) Next, as shown in Figure 3(c), a PSQ resin mixture containing titanium dioxide with a particle size of 1 to 500 nm is applied as an adhesive member 13 to the lead frame 11 in the second region 110b, which is the central region of the area divided into three sections by the first and second dams 17a and 17b. The light-emitting element 12 is then mounted, and the adhesive member 13 is cured by heating at approximately 180°C for 30 minutes.

[0070] Next, solder paste is applied to the first electrode 11a of the first region 110a at the edge, and the Zener diode 19 is mounted. Then, it is heated to 240°C to bond the Zener diode 19 to the first electrode 11a.

[0071] Subsequently, gold wires are used as bonding wires 18a and 18b to bond the upper electrode of the light-emitting element 12 to the first electrode 11a and the second electrode 11b of the first and third regions 110a and 110c, respectively.

[0072] At this time, since the wetting of the adhesive member 13 is blocked by the first and second weirs 17a and 17b, the bonding area on the upper surface of the lead frame 11 within the first and third regions 110a and 110c is secured, and wire bonding can be easily performed.

[0073] Furthermore, since the heights of the first and second dams 17a and 17b are lower than the upper surface of the light-emitting element 12, the portions of the bonding wires 18a and 18b that are close to the light-emitting element 12 can be stretched parallel to the upper surface of the lead frame 11.

[0074] Similarly, the upper electrode of the Zener diode 19 and the second electrode in the first region 110a are wire-bonded using the bonding wire 20.

[0075] (Step S5) Next, as shown in Figure 4(a), a PSQ resin containing titanium dioxide with a particle size of 1 to 500 nm is used as the first sealing member 15 and is applied to the recesses of the first and second regions 110a and 110b, covering the entire lead frame 11 of the first and second regions 110a and 110b. Then, it is heated at 180°C for 30 minutes to pre-cur it and form the first sealing member 15. Note that the pre-curing of the first sealing member 15 can be omitted. In this case, there is no problem as it is fully cured at the same time as the second sealing member 16 in step S6.

[0076] (Step S6) Next, as shown in Figure 4(b), a resin mixture of dimethyl silicone resin and YAG phosphor is filled into the frame 10, and the resin is cured by heating at 150°C for 1 hour to form the second sealing member 16. At the same time, the first sealing member 15 is fully cured.

[0077] (Step S7) Finally, as shown in Figure 4(c), the lead frame 11 is cut with tie bars to separate it from the connecting portion, and then separated into individual semiconductor light-emitting devices.

[0078] Based on the above, the semiconductor light-emitting device 1 of this embodiment can be manufactured.

[0079] As described above, the first and second dams 17a and 17b can be molded simultaneously in the same step S3 process as the frame 10, so the manufacturing process does not increase for the molding of the first and second dams 17a and 17b. Furthermore, the manufacturing process for the first sealing member 15 only increases by one step, step S5. In addition, the pre-curing of the resin mixture can be omitted in step S5.

[0080] <<Embodiment 2>> The configuration of the semiconductor light-emitting device 50 of Embodiment 2 will be explained using Figures 5(a) to 5(f). Figures 5(a) to 5(f) correspond to Figures 1(a) to 5(f) of Embodiment 1.

[0081] In the second embodiment, the semiconductor light-emitting device 50 has a cranked (bent) shape to position a portion of the gap 11c below the first dam 17a. This integrates the resin mixture filling the gap 11c with the resin mixture constituting the first dam 17a. This improves moldability by allowing the resin mixture to be smoothly injected into the portion that will become the first dam 17a during the molding process in step S3 of Figure 2. A recess can also be provided in the second electrode 11b below the second dam 17b, along the second dam 17b. Such a recess can be formed in the process of step S1 of Figure 2.

[0082] Furthermore, in the semiconductor light-emitting device 50, a portion of the first electrode 11a in the first region 110a is closer to the second region 110b than in the semiconductor light-emitting device 1 in Figure 1, due to the bending of the gap 11c. By connecting the bonding wire 18a to the closer first electrode 11a, the length of the bonding wire 18a is shortened.

[0083] The semiconductor light-emitting device of this embodiment can be used with PLCC (Plastic leaded chip carrier) packages in general. [Explanation of symbols]

[0084] 1. Semiconductor light-emitting device 10 Frame 11 Lead Frame 11a 1st electrode 11b 2nd electrode 11c gap 12 Light-emitting elements 13 Adhesive members 17a Dam 18a Bonding wire 18b Bonding wire 19 Zener diode 20 Bonding wires 30 steps 50 Semiconductor light-emitting devices 110a 1st area 110b 2nd area 110c 3rd area

Claims

1. Lead frame and, A frame body mounted along the edge of the upper surface of the lead frame, The first and second weirs divide the area on the upper surface of the lead frame enclosed by the frame into first, second, and third areas, A light-emitting element, die-bonded by an adhesive member, is located on the upper surface of the lead frame within the central second region, A bonding wire connects a pair of upper electrodes of the light-emitting element to the upper surface of the lead frame in the first region and the second region, respectively. A first sealing member made of light-reflective resin is filled into the first and second regions up to the height of the first and second dams, The light-emitting element and the first sealing member are covered by a second sealing member made of a resin containing a phosphor, which is filled inside the frame. The heights of the first and second dams are lower than the upper surface of the light-emitting element. The frame and the first and second weirs are made of a resin mixture containing light-reflective particles. The thermal expansion coefficient of the first sealing member is a value between the thermal expansion coefficient of the second sealing member and the thermal expansion coefficient of the lead frame. A semiconductor light-emitting device characterized in that the gap of the lead frame within the first region is bent, and a portion of it is located below the first dam.

2. A semiconductor light-emitting device according to claim 1, characterized in that the resin mixture is a thermoplastic resin containing light-reflective particles.

3. A semiconductor light-emitting apparatus according to claim 1, characterized in that the hardness of the first sealing member is a value between the hardness of the second sealing member and the hardness of the lead frame.

4. A semiconductor light-emitting apparatus according to claim 1, wherein the first sealing member is composed of the formula [(RSio １．５ A semiconductor light-emitting device characterized by being composed of a resin mixture in which polysilsesquioxane (PSQ) resin represented by )n] (R: alkyl group, n: integer) is used as the resin medium.

5. A semiconductor light-emitting device according to claim 1, characterized in that the first and second dams extend from the inner circumferential surface of the frame.

6. A semiconductor light-emitting apparatus according to claim 1, wherein the adhesive member is a resin containing light-reflective particles, and the adhesive member covers the entire upper surface of the lead frame within the second region.

7. A semiconductor light-emitting device according to claim 1, characterized in that the cross-sections in the width direction of the first and second dams have a tapered shape on the side surface.

8. A semiconductor light-emitting apparatus according to claim 1, wherein the lead frame is divided into a first electrode and a second electrode by a gap, and the gap is located in the first region, A semiconductor light-emitting device characterized in that the gap is filled with the same resin as the frame.

9. A semiconductor light-emitting apparatus according to claim 1, characterized in that the lead frame, the first sealing member, and the second sealing member have increasing hardness in that order.

10. A step of forming a frame along the edge of the upper surface of the lead frame using a resin mixture containing light-reflective particles, and at the same time forming first and second weirs that divide the area of ​​the upper surface of the lead frame surrounded by the frame into first, second, and third areas, and A step of die-bonding the light-emitting element to the upper surface of the lead frame within the central second region using an adhesive member, The process of wire bonding a pair of upper electrodes of the light-emitting element to the upper surface of the lead frame in the first region and the second region, respectively, The process involves filling the first and second regions with a light-reflective resin up to the height of the first and second dams, curing it, and forming a first sealing member. The process includes the step of filling the frame with a resin containing a phosphor so as to cover the light-emitting element and the first sealing member, and curing it to form a second sealing member. The lead frame has a bent gap at a position corresponding to the first region, The process of forming the first and second weirs involves filling the gap with the resin mixture so that a portion of the gap is located below the first weir, and integrating the resin mixture filling the gap with the resin mixture constituting the first weir. The heights of the first and second dams are lower than the upper surface of the light-emitting element. A method for manufacturing a semiconductor light-emitting device, characterized in that the thermal expansion coefficient of the first sealing member after curing is a value between the thermal expansion coefficient of the second sealing member after curing and the thermal expansion coefficient of the lead frame.

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