Method for masking silicon carbide components

JP7873044B1Active Publication Date: 2026-06-11DRY CHEM CO LTD
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
DRY CHEM CO LTD
Filing Date
2026-03-06
Publication Date
2026-06-11

AI Technical Summary

Benefits of technology

【0012】 本発明者は、各種試験により、炭化ケイ素部材に対して密着性の高い被覆層を得るためにニッケルめっきが好適であることを知見した。本発明は当該知見に基づくものである。

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Abstract

This invention provides a masking method for silicon carbide components that can achieve high adhesion and selectivity. [Solution] The method comprises a nickel coating layer formation step of forming a nickel coating layer 2 by plating on the silicon carbide surface of the silicon carbide member 1, and a nickel coating layer removal step of mechanically removing the unnecessary regions 3 of the nickel coating layer 2 and using the remaining nickel coating layer 2 as a mask.
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Claims

1. A nickel coating layer formation step in which a nickel coating layer is formed on the silicon carbide surface of a silicon carbide member by plating, A method for masking a silicon carbide member, characterized by comprising a nickel coating removal step of mechanically removing unnecessary areas of the nickel coating layer and using the remaining nickel coating layer as a mask.

2. The method for masking a silicon carbide member according to claim 1, characterized in that the thickness of the nickel coating layer in the nickel coating layer formation step is 3 μm to 5 μm.

3. The method for masking a silicon carbide member according to claim 1 or 2, further comprising a fluorination step of forming a nickel fluoride film on the surface of the nickel coating layer formed as a mask by the nickel coating layer removal step.