How to manufacture a display panel

Abstract

Provided is a novel display panel having excellent functionality. The present invention pertains to a display panel and a display panel manufacturing method which comprises: forming an insulator having at least first and second openings on a substrate; forming a first material layer, which includes an organic compound of a first light emission element, on the first opening and a second material layer, which includes an organic compound of a second light emission element, on the second opening, by using a wet process; selectively forming a first resist mask and a second resist mask on the first material layer and the second material layer, respectively; forming a third material layer by processing the first material layer using the first resist mask; and forming a fourth material layer by processing the second material layer using the second resist mask. A hole transporting material, a light emission material, or the like can be used as the organic compounds of the light emission elements.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a method for manufacturing a display panel and to a display panel.

[0002] Furthermore, one aspect of the present invention is not limited to the above-mentioned technical field. The technical field of one aspect of the invention disclosed herein relates to a product, a method, or a method of manufacture. Alternatively, one aspect of the present invention relates to a process, a machine, a manufacture, or a composition of matter. More specifically, examples of the technical fields of one aspect of the present invention disclosed herein include semiconductor devices, display devices, light-emitting devices, energy storage devices, memory devices, methods for driving them, or methods for manufacturing them. [Background technology]

[0003] One method for manufacturing a display panel equipped with organic EL is to form the light-emitting layer without using a fine metal mask. As an example of such a method, the light-emitting layer is deposited by vacuum deposition so that it becomes a continuous film extending over the display area of ​​an array substrate, and light is irradiated only to the portion of the light-emitting layer corresponding to a specific pixel, thereby changing the luminescent organic compound into a different material (see Patent Document 1).

[0004] Another example of this manufacturing method is a method of forming the EL layer using an inkjet method (see Patent Document 2). [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 2008-270782 [Patent Document 2] Japanese Patent Publication No. 2001-185354 [Overview of the Initiative] [Problems that the invention aims to solve]

[0006] As shown in Figure 2 of Patent Document 1, the organic layer ORG is a continuous film that extends across the display area. That is, the organic layer ORG covers the pixel electrode PE and the partition insulating layer PI. In such a configuration of the organic layer ORG, crosstalk was likely to occur even if the pixel electrode PE was independent for pixels PX1 to PX3. Crosstalk refers to the phenomenon where a non-emissive pixel becomes lit due to the influence of an adjacent emissive pixel. Furthermore, in Patent Document 2, it was necessary to match the nozzle diameter of the inkjet device with the size of the bank opening, so miniaturization of the nozzle diameter was essential to obtain a high-definition display panel.

[0007] In view of the above, one aspect of the present invention provides a display panel having a light-emitting element having at least a layer containing an organic compound manufactured by a wet method, wherein the light-emitting element is capable of exhibiting at least a first and a second emission color, and one of the objectives is to provide a method for separating the layer containing the organic compound for each light-emitting element and a configuration for the light-emitting element in order to obtain a high-definition display panel.

[0008] In other words, one aspect of the present invention aims to provide a method for manufacturing a display panel that is highly functional and cost-effective. Alternatively, one aspect of the present invention aims to provide a display panel that is highly functional and cost-effective.

[0009] Furthermore, the description of these problems does not preclude the existence of other problems. Moreover, one aspect of the present invention does not need to solve all of these problems. Other problems will naturally become apparent from the description in the specification, drawings, and claims, and it is possible to extract other problems from the description in the specification, drawings, and claims. [Means for solving the problem]

[0010] In view of the above problems, one aspect of the present invention provides a method for producing a layer having an organic compound, such as a light-emitting material, a hole transporting material, or an electron transporting material, for at least one light-emitting element by a wet process, and for removing the layer having the organic compound formed in an unwanted region by a processing step using a resist mask, and also provides a configuration for a light-emitting element. The method for producing a display panel and its configuration according to one aspect of the present invention are preferable because they are less prone to crosstalk.

[0011] With this configuration, the layer containing organic compounds in the light-emitting element, such as luminescent materials, hole transport materials, or electron transport materials, is divided in unnecessary regions, so that the layer is not formed across the display area. In other words, the method for manufacturing a display panel and its configuration according to one aspect of the present invention are preferable because they are highly functional and cost-effective.

[0012] A specific aspect of the present invention is a method for manufacturing a display panel, comprising: forming an insulator having at least a first opening and a second opening on a substrate; forming a first material layer containing an organic compound for a first light-emitting element in the first opening and a second material layer containing an organic compound for a second light-emitting element in the second opening, both by a wet process; selectively forming a first resist mask and a second resist mask on the first material layer and the second material layer, respectively; processing the first material layer using the first resist mask to form a third material layer; and processing the second material layer using the second resist mask to form a fourth material layer.

[0013] Another aspect of the present invention is a method for manufacturing a display panel, comprising: forming an insulator having at least a first opening and a second opening on a substrate; forming a first material layer containing a hole-transporting material for a first light-emitting element and a second light-emitting element in the first opening and the second opening by a wet process; selectively forming a first resist mask and a second resist mask on the first material layer; processing the first material layer using the first resist mask to form a hole-transporting region for a first light-emitting element; and processing the first material layer using the second resist mask to form a hole-transporting region for a second light-emitting element.

[0014] Another aspect of the present invention is a method for manufacturing a display panel, comprising: forming an insulator having a first opening and a second opening on a substrate; forming a first material layer containing the light-emitting material of a first light-emitting element in the first opening and a second material layer containing the light-emitting material of a second light-emitting element in the second opening, both by a wet process; selectively forming a first resist mask and a second resist mask on the first material layer and the second material layer, respectively; processing the first material layer using the first resist mask to form the light-emitting layer of the first light-emitting element, and processing the second material layer using the second resist mask to form the light-emitting layer of the second light-emitting element.

[0015] Another aspect of the present invention is a method for manufacturing a display panel, comprising: forming an insulator having at least a first opening and a second opening on a substrate; forming a first material layer containing a hole transporting material for a first light-emitting element and a second light-emitting element in the first and second openings by a wet process; forming a second material layer containing a light-emitting material for a first light-emitting element in the first opening and a third material layer containing a light-emitting material for a second light-emitting element in the second opening, both by a wet process; selectively forming a first resist mask and a second resist mask on the second and third material layers, respectively; processing the second material layer using the first resist mask to form a light-emitting layer for a first light-emitting element; and processing the third material layer using the second resist mask to form a light-emitting layer for a second light-emitting element.

[0016] Another aspect of the present invention is to form an insulator having at least a first opening and a second opening on a substrate, form a first material layer containing a hole transporting material of a first light emitting element and a second light emitting element in the first opening and the second opening by a wet method, form a second material layer containing a light emitting material of the first light emitting element in the first opening and a third material layer containing a light emitting material of the second light emitting element in the second opening by a wet method respectively, selectively form a first resist mask and a second resist mask on the second material layer and the third material layer respectively, process the second material layer using the first resist mask to form a light emitting layer of the first light emitting element, and process the third material layer using the second resist mask to form a light emitting layer of the second light emitting element, and form a conductive layer across the first opening and the second opening, which is a method for manufacturing a display panel.

[0017] In one aspect of the present invention, it is preferable to use an inkjet method as the wet method.

[0018] Another aspect of the present invention is to form a first material layer containing an organic compound of a first light emitting element on a substrate by a wet method, selectively form a first resist mask on the first material layer, process the first material layer using the first resist mask to form a second material layer, form a third material layer containing an organic compound of a second light emitting element on the substrate and the first resist mask, selectively form a second resist mask on the third material layer, and process the third material layer using the second resist mask to form a fourth material layer, which is a method for manufacturing a display panel.

[0019] Another aspect of the present invention is a method for manufacturing a display panel, comprising: forming a first material layer containing the light-emitting material of a first light-emitting element on a substrate by a wet process; selectively forming a first resist mask on the first material layer; processing the first material layer using the first resist mask to form the light-emitting layer of a first light-emitting element; forming a second material layer containing the light-emitting material of a second light-emitting element on the substrate and the first resist mask; selectively forming a second resist mask on the second material layer; and processing the second material layer using the second resist mask to form the light-emitting layer of a second light-emitting element.

[0020] Another aspect of the present invention is a method for manufacturing a display panel, comprising: forming a first material layer containing a hole transporting material for a first light-emitting element and a second light-emitting element on a substrate by a wet process; forming a second material layer containing a light-emitting material for a first light-emitting element on the first material layer by a wet process; selectively forming a first resist mask on the second material layer; processing the second material layer using the first resist mask to form a light-emitting layer for a first light-emitting element; forming a third material layer containing a light-emitting material for a second light-emitting element on the substrate and the first resist mask; selectively forming a second resist mask on the third material layer; processing the third material layer using the second resist mask to form a light-emitting layer for a second light-emitting element; and forming conductive layers on the light-emitting layer for a first light-emitting element and the light-emitting layer for a second light-emitting element.

[0021] In one embodiment of the present invention, the wet process is preferably a spin coating method.

[0022] In one embodiment of the present invention, it is preferable to form a mask layer beneath the first resist mask and the second resist mask.

[0023] Another aspect of the present invention is a display panel having an insulator on a substrate, wherein, in a top view, the insulator has a first opening and a second opening, the first opening is located in which a first material layer containing an organic compound of a first light-emitting element is located, and the first material layer does not have a region that overlaps with the top surface of the insulator, and the second opening is located in which a second material layer containing an organic compound of a second light-emitting element is located, and the second material layer does not have a region that overlaps with the top surface of the insulator.

[0024] Another aspect of the present invention is a display panel having an insulator on a substrate, wherein in a top view the insulator has a first opening and a second opening, the first opening is located in which a first material layer containing a hole-transporting material of a first light-emitting element is located, and the first material layer does not overlap with the top surface of the insulator, and the second opening is located in which a second material layer containing a hole-transporting material of a second light-emitting element is located, and the second material layer does not overlap with the top surface of the insulator.

[0025] Another aspect of the present invention is a display panel having an insulator on a substrate, wherein in a top view the insulator has a first opening and a second opening, the first opening is located in a first material layer containing a light-emitting material of a first light-emitting element, and the first material layer does not have a region that overlaps with the top surface of the insulator, and the second opening is located in a second material layer containing a light-emitting material of a second light-emitting element, and the second material layer does not have a region that overlaps with the top surface of the insulator.

[0026] In one embodiment of the present invention, it is preferable that at least the first light-emitting element has a stacked light-emitting unit.

[0027] In one aspect of the present invention, the stacked light-emitting units preferably have a phosphorescent material.

[0028] In one aspect of the present invention, the stacked light-emitting units preferably have a fluorescent light-emitting material.

[0029] In one embodiment of the present invention, the display panel preferably has a top-emission type structure that extracts light from the side facing the substrate.

[0030] In one embodiment of the present invention, the display panel preferably has a bottom emission type structure that extracts light from the substrate side. [Effects of the Invention]

[0031] According to one aspect of the present invention, a high-definition display panel equipped with multiple light-emitting elements can be provided without using a metal mask, and the display panel exhibits the effect of being less prone to crosstalk. In other words, according to one aspect of the present invention, a method for manufacturing a display panel and a display panel can be provided that are highly functional and cost-effective.

[0032] Furthermore, the description of these effects does not preclude the existence of other effects. Moreover, one aspect of the present invention does not necessarily have to possess all of these effects. Other effects will naturally become apparent from the description in the specification, drawings, and claims, and it is possible to extract other effects from the description in the specification, drawings, and claims. [Brief explanation of the drawing]

[0033] Figures 1A to 1E illustrate a method for manufacturing a display panel according to an embodiment. Figures 2A to 2D illustrate a method for manufacturing a display panel according to an embodiment. Figures 3A to 3D illustrate a method for manufacturing a display panel according to an embodiment. Figures 4A to 4D illustrate a method for manufacturing a display panel according to an embodiment. Figures 5A to 5F illustrate the light-emitting element according to the embodiment. Figures 6A and 6B illustrate a method for manufacturing a display panel according to an embodiment. Figure 7 is a diagram illustrating the method for manufacturing a display panel according to an embodiment. Figures 8A and 8B illustrate the configuration of the display panel according to the embodiment. Figures 9A and 9B illustrate the configuration of a display panel according to an embodiment. Figure 10 is a diagram illustrating a pixel circuit according to an embodiment. Figures 11A to 11E illustrate the configuration of an information processing device according to an embodiment. Figures 12A to 12E illustrate the configuration of an information processing device according to an embodiment. Figures 13A and 13B illustrate the configuration of an information processing device according to an embodiment. [Modes for carrying out the invention]

[0034] In the drawings attached to this specification, components are sometimes classified by function and explained using independent block diagrams. However, in reality, it is difficult to completely separate components by function, and a single component may be involved in multiple functions.

[0035] In this specification, the terms "source" and "drain" of a transistor are interchangeable depending on the transistor's polarity and the potential applied to each terminal. Generally, in an n-channel transistor, the terminal to which a low potential is applied is called the source, and the terminal to which a high potential is applied is called the drain. In a p-channel transistor, the terminal to which a low potential is applied is called the drain, and the terminal to which a high potential is applied is called the source. For convenience, this specification sometimes describes the connection relationships of a transistor assuming that the source and drain are fixed, but in reality, the terms "source" and "drain" are interchangeable according to the potential relationship described above.

[0036] In this specification, the source of a transistor refers to the source region, which is part of the semiconductor film that functions as the active layer, or the source electrode connected to the semiconductor film. Similarly, the drain of a transistor refers to the drain region, which is part of the semiconductor film, or the drain electrode connected to the semiconductor film. The gate refers to the gate electrode.

[0037] In this specification, a state in which transistors are connected in series means, for example, a state in which only one of the sources or drains of the first transistor is connected to only one of the sources or drains of the second transistor. A state in which transistors are connected in parallel means a state in which one of the sources or drains of the first transistor is connected to one of the sources or drains of the second transistor, and the other of the sources or drains of the first transistor is connected to the other of the sources or drains of the second transistor.

[0038] In this specification, "connection" means an electrical connection, corresponding to a state in which current, voltage, or potential can be supplied or transmitted. Therefore, a connected state does not necessarily refer to a direct connection, but also includes a state indirectly connected through circuit elements such as wiring, resistors, diodes, and transistors, so that current, voltage, or potential can be supplied or transmitted.

[0039] In this specification, even when components that appear independent in a circuit diagram are connected, in reality, a single conductive layer may combine the functions of multiple components, for example, when a portion of the wiring functions as an electrode. In this specification, "connection" includes such cases where a single conductive layer combines the functions of multiple components.

[0040] In this specification, the first and second electrodes of a transistor may be used in explanations, but if one of the first and second electrodes is the source electrode, the other refers to the drain electrode.

[0041] In this specification, a light-emitting element may be referred to as a light-emitting device. A light-emitting element has a structure in which a layer containing an organic compound (referred to as an organic compound layer) is sandwiched between a pair of electrodes. One of the pair of electrodes is the anode, the other of the pair of electrodes is the cathode, and at least one of the organic compound layers is a light-emitting layer.

[0042] In this specification, a light-emitting device having an organic compound layer formed without using a metal mask or a fine metal mask may be referred to as a light-emitting device having a metal maskless (MML) structure.

[0043] In this specification, light-emitting elements that emit red, green, and blue light may be referred to as red light-emitting elements, green light-emitting elements, and blue light-emitting elements, respectively.

[0044] In this specification, a structure in which the light-emitting layers are fabricated separately for each color light-emitting element may be referred to as an SBS (Side By Side) structure. For example, by using an SBS structure to fabricate a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer, a full-color display device can be provided.

[0045] In this specification, a light-emitting element that emits white light may be referred to as a white light-emitting element. A white light-emitting element can be combined with a colored layer (for example, a color filter or color conversion layer) to provide a full-color display device.

[0046] Furthermore, light-emitting devices can be broadly classified into single structures and tandem structures. A single structure has one light-emitting unit between a pair of electrodes. This light-emitting unit refers to a laminate containing one or more light-emitting layers.

[0047] To obtain a white light-emitting element using a single structure, the light-emitting unit must have two or more light-emitting layers, and the light emitted from these two or more layers must satisfy a complementary color relationship. The two or more light-emitting layers may be in contact with each other in the light-emitting element. Furthermore, a white light-emitting element can also be obtained in a light-emitting element having three or more light-emitting layers, provided that the light emitted satisfies a complementary color relationship. The three or more light-emitting layers may be in contact with each other in the light-emitting unit.

[0048] A tandem structure is a structure having two or more light-emitting units between a pair of electrodes. Each of the two or more light-emitting units refers to a laminate containing one or more light-emitting layers. In a tandem structure, it is preferable to provide intermediate layers, such as charge generation layers, between the multiple light-emitting units. The charge generation layer has the function of injecting holes into the light-emitting unit formed in contact with the charge generation layer when a voltage is applied between the cathode and anode, and injecting electrons into the other light-emitting unit. For example, a tandem structure is preferably a structure having a first light-emitting unit, a charge generation layer, and a second light-emitting unit between a pair of electrodes, in which the charge generation layer injects holes into the first light-emitting unit and electrons into the second light-emitting unit.

[0049] To obtain a white light-emitting element using a tandem structure, the light from the light-emitting layers of two or more light-emitting units should be combined to produce white light emission. The combination of light-emitting layers that produces white light should satisfy the complementary color relationship, similar to the single-layer structure.

[0050] Furthermore, when comparing the aforementioned white light-emitting elements (single and tandem structures) with SBS structure light-emitting elements, SBS structure light-emitting elements can consume less power than white light-emitting elements (single and tandem structures). For electronic devices where low power consumption is desired, SBS structure light-emitting elements are preferable. On the other hand, white light-emitting elements (single and tandem structures) are preferable because their manufacturing process is simpler than that of SBS structure light-emitting elements, thus allowing for lower manufacturing costs or higher manufacturing yields.

[0051] In this specification, a display module may refer to a display panel on which connectors such as FPC (Flexible Printed Circuit) or TCP (Tape Carrier Package) are attached, or on which ICs are mounted on the board using a COG (Chip On Glass) method or the like. A display module is one form of a display device.

[0052] Next, embodiments will be described in detail with reference to the drawings. However, it will be readily apparent to those skilled in the art that the present invention is not limited to the descriptions of embodiments, and that its form and details can be modified in various ways without departing from the spirit and scope of the present invention. In addition, the same reference numerals are used for the same parts or parts having similar functions in different drawings, and repeated descriptions may be omitted.

[0053] (Embodiment 1) This embodiment describes a first method for manufacturing a display panel according to one aspect of the present invention. The method for manufacturing a display panel according to one aspect of the present invention involves forming the organic compound layer of the light-emitting element by a wet process. A wet process is a method of obtaining a liquid composition by liquefying a material having a predetermined function by dissolving it in a solvent or dispersing it in a solvent, and then applying the liquid composition. The liquid composition may be described as a droplet. After application, it is solidified or thinned through a drying or curing process. Compared to the vapor deposition method, the wet process generates less waste material, thus enabling the formation of light-emitting elements and display panels at a lower cost. Examples of wet processes include the inkjet method and the spin-coating method, which will be described in detail later. In the first manufacturing method, the inkjet method will be used as an example of a wet process. Of course, the organic compound layer of the light-emitting element may be formed using a wet process other than the inkjet method.

[0054] Figure 1A shows a first substrate 760 of the display panel, a first electrode 762 provided on the first substrate 760, and an insulator 763 covering at least the ends of the first electrode 762 and having an opening 764. The opening 764 can also be seen in a top view of the insulator 763. The first substrate 760 can be a substrate on which semiconductor elements are provided. Transistors are often used as semiconductor elements, and the first substrate 760 is sometimes referred to as a transistor substrate. Semiconductor elements such as transistors are used as switching elements, and can control the light-emitting or non-light-emitting state of the light-emitting elements. A display panel on which semiconductor elements are provided for each light-emitting element is sometimes referred to as an active matrix display panel. A display panel on which semiconductor elements are provided for each group of light-emitting elements is sometimes referred to as a passive matrix display panel. The present invention can be applied to both active matrix display panels and passive matrix display panels. The materials used for the first substrate 760 will be described later.

[0055] The first electrode 762 corresponds to one of a pair of electrodes of the light-emitting element. The first electrode 762 functions as either a cathode or an anode. The first electrode 762 has a conductive material selected considering an appropriate work function for a cathode or anode. Furthermore, if the first electrode 762 has a translucent conductive material, a display panel with a so-called bottom emission structure can be provided, in which the light from the light-emitting element is emitted toward the first substrate 760. If the first electrode 762 has a reflective conductive material, a display panel with a so-called top emission structure can be provided, in which the light from the light-emitting element is emitted toward the top of the first electrode 762. The present invention can be applied to either a bottom emission display panel or a top emission display panel. The materials used for the first electrode 762 will be described later.

[0056] The insulator 763 is located at the boundary between adjacent light-emitting elements and may be referred to as a partition, bank, or embankment. In other words, the insulator 763 separates adjacent light-emitting elements. Figure 1A is a cross-sectional view, so the insulator 763 appears to be separate, but when viewed from above, the insulator 763 has a continuous structure and has an opening 764 through which the first electrode 762 is exposed. The opening 764 can be formed using photolithography. The materials that can be used for the insulator 763 will be described later.

[0057] Figure 1B shows how droplets containing one of the organic compounds of the light-emitting element are applied by inkjet printing. Specifically, the nozzles of the inkjet device (nozzle 770, nozzle 780, and nozzle 790) are positioned facing the first substrate 760, and droplets (droplets 771, 781, and 791) are applied from nozzles 770, 780, and 790 toward the opening 764 of the insulator 763. Applying two or more droplets selected from droplets 771, 781, and 791 simultaneously is preferable for high productivity, but the droplets may be applied sequentially. For example, droplet 781 can be applied after droplet 771. When droplets are applied sequentially, a curing step may be provided between each application. The curing step prevents mixing of droplets applied earlier and those applied later. The application of each droplet includes dropping it in a droplet-like manner. Furthermore, the application of each droplet includes cases where the liquid discharged from the nozzle is continuously dropped into multiple openings 764 without interruption.

[0058] Each droplet contains one of the organic compounds found in the light-emitting element. Examples of organic compounds found in the light-emitting element include hole-injecting materials, hole-transporting materials, light-emitting materials, electron-transporting materials, and electron-injecting materials. That is, each droplet can contain one of the hole-injecting material, hole-transporting material, light-emitting material, electron-transporting material, and electron-injecting material. For example, when forming a light-emitting material by an inkjet method, droplets 771, 781, and 791 may each contain an organic compound and solvent related to a red light-emitting material, an organic compound and solvent related to a green light-emitting material, and an organic compound and solvent related to a blue light-emitting material, respectively. When droplets 771, 781, and 791 are coated simultaneously, it is preferable to select materials with the same function from among hole-injecting materials, hole-transporting materials, light-emitting materials, electron-transporting materials, and electron-injecting materials for the organic compound found in each light-emitting element.

[0059] Furthermore, hole injection materials and hole transport materials can be common to all light-emitting elements, and such a layer is referred to as a common layer. Electron injection materials and electron transport materials can also be used as common layers. For coating the common layer, multiple nozzles are not required; it can be coated with a single nozzle. When using a single nozzle, a larger nozzle diameter is preferable to improve productivity. Spin coating can be used for coating the common layer.

[0060] Figure 1B illustrates the process of applying the organic compounds of each light-emitting element to the first substrate 760 using an inkjet method. However, other methods such as spin coating can also be applied. In other words, the present invention allows at least one of the organic compounds of each light-emitting element to be formed on the first substrate 760 by wet methods such as the inkjet method and the spin coating method.

[0061] The nozzle 780 and the first substrate 760 are moved relative to each other to form layers (material layers) containing the organic compound of the light-emitting element, as shown in Figure 1C. Each material layer (material layer 772, material layer 782, and material layer 792) is formed at least in the opening 764. Furthermore, material layers 772, 782, and 792 may also be formed on the upper surface of the insulator 763. The material layers are often thicker in the portion located in the opening 764 than in the portion located on the upper surface of the insulator 763. In addition, the side surface of the insulator 763 may be inclined in the opening 764, and the material layers may be thinner in the portion formed on the upper surface of the insulator 763 than in the portion formed in the inclined region. By applying a surface treatment to the insulator 763, the material layers can be actively positioned in the opening 764. One example of a surface treatment is to impart water repellency to the surface of the insulator 763.

[0062] Material layers 772, 782, and 792 may each undergo a drying process or the like to volatilize or evaporate the solvent contained in each droplet. The drying process may be natural drying or heating.

[0063] Material layers 772, 782, and 792 may each be further hardened on the surface in addition to a drying process. For example, at least the surface can be hardened through a light irradiation process. Ultraviolet light or infrared light can be used. The light irradiation process can also be used to flatten the surfaces of material layers 772, 782, and 792.

[0064] As shown in Figure 1D, a first resist mask RES1, a second resist mask RES2, and a third resist mask RES3 are selectively formed on material layers 772, 782, and 792, respectively. The first resist mask RES1, the second resist mask RES2, and the third resist mask RES3 are preferably formed in positions overlapping with the first electrode 762. Furthermore, the first resist mask RES1, the second resist mask RES2, and the third resist mask RES3 are preferably sized to fit within the opening 764. According to the cross-sectional view in Figure 1D, the width of the first resist mask RES1 is the same as or smaller than the width of the opening 764. The widths of the second resist mask RES2 and the third resist mask RES3 are also the same as the width of the first resist mask RES1. Negative-type resists or positive-type resists can be used for the first resist mask RES1, the second resist mask RES2, and the third resist mask RES3, respectively.

[0065] As shown in Figure 1E, the material layer 772 is processed using the first resist mask RES1, specifically by removing a portion of it to form the processed material layer 773. The material layer 782 is processed using the second resist mask RES2, specifically by removing a portion of it to form the processed material layer 783. The material layer 792 is processed using the third resist mask RES3, specifically by removing a portion of it to form the processed material layer 793. The first to third resist masks RES1 to RES3 are removed after the material layers have been processed.

[0066] The processing steps can include etching or laser ablation. For etching, dry etching or wet etching can be used. In the laser ablation method, a resist mask may be used as a light-absorbing or light-reflecting layer before irradiating with a laser.

[0067] By placing the first resist mask RES1 and processing the material layer 772, fine light-emitting elements can be provided regardless of the nozzle diameter of the nozzle 770, thereby providing a high-definition display panel. Furthermore, by removing a portion of the material layer 772, the material layer is separated in adjacent light-emitting elements, thus providing a display panel with reduced crosstalk.

[0068] In the display panel of this embodiment, as shown in the cross-sectional view in Figure 1E, it is preferable that adjacent light-emitting elements have different emission colors, but it is also possible to use light-emitting elements that exhibit the same emission color. For example, the light-emitting layers can be differentiated by using a red light-emitting element for material layer 773, a green light-emitting element for material layer 783, and a blue light-emitting element for material layer 793. This configuration is called an SBS structure. Furthermore, this embodiment is not limited to a configuration having three colors. For example, this embodiment may have a configuration having four or more colors, including a white light-emitting element.

[0069] Next, we will explain the materials and other elements that can be used in each component.

[0070] <Regarding the material of the first substrate> The first substrate 760 can be made of materials such as glass, quartz, ceramic, sapphire, or organic resin. Because these materials are translucent, light from the light-emitting element can be extracted from the first substrate 760. Although referred to as a "substrate," using, for example, an organic resin among the above materials allows for flexibility. Furthermore, it becomes possible to create a thinner film than the typical image of a "substrate," allowing it to be formed into a film. In other words, depending on the material used for the first substrate 760, the display panel in this embodiment can take on a flexible form or a film form. In addition to the above materials, a metal substrate or alloy substrate can also be used for the first substrate 760. Since these materials are not translucent, they should be used when it is not necessary to extract light from the light-emitting element from the first substrate 760.

[0071] <Regarding the material of the first electrode> When the first electrode 762 is used as the cathode, metals, alloys, electrically conductive compounds, or mixtures thereof with a small work function (specifically, 3.8 eV or less) can be used. Specific examples include elements belonging to Group 1 or Group 2 of the periodic table, namely alkali metals such as lithium (Li) or cesium (Cs), and alkaline earth metals such as magnesium (Mg), calcium (Ca), and strontium (Sr), or alloys containing these (MgAg, AlLi, etc.), or rare earth metals such as europium (Eu) and ytterbium (Yb), or alloys containing these. However, by providing an electron injection layer between the cathode and the electron transport layer, various conductive materials such as Al, Ag, ITO, silicon, or indium oxide-tin oxide containing silicon oxide can be used as the cathode, regardless of the magnitude of the work function. Films containing these conductive materials can be formed using sputtering, inkjet, or spin coating methods.

[0072] When the first electrode 762 is used as the anode, it is preferable to use a metal, alloy, conductive compound, or mixture thereof with a large work function (specifically, 4.0 eV or more). Specifically, examples include conductive metal oxide films such as indium tin oxide (ITO), indium tin oxide containing silicon or silicon oxide, indium zinc oxide (sometimes abbreviated as IZO), and indium oxide containing tungsten oxide and zinc oxide (IWZO). These conductive metal oxide films are usually deposited by sputtering, but they may also be fabricated using methods such as the sol-gel method. For example, indium zinc oxide can be formed by sputtering using a target to which 1 to 20 wt% zinc oxide has been added to indium oxide. Furthermore, indium oxide containing tungsten oxide and zinc oxide (IWZO) can be formed by a sputtering method using a target containing 0.5 wt% to 5 wt% of tungsten oxide and 0.1 wt% to 1 wt% of zinc oxide relative to indium oxide. Other examples include gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), or metallic nitrides (e.g., titanium nitride).

[0073] <Regarding insulating materials> The insulator 763 can be made of organic or inorganic materials. For example, the insulator 763 may have an organic resin such as polyimide resin, polyamide resin, acrylic resin, siloxane resin, silicone resin, epoxy resin, or phenolic resin. Alternatively, the insulator 763 may have one or more selected from aluminum oxide, magnesium oxide, silicon oxide, silicon oxide nitride, silicon oxide nitride, silicon nitride, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, and tantalum oxide. A laminated structure having each of the above materials may also be applied to the insulator 763. Furthermore, materials with impurity elements such as lanthanum (La), nitrogen, or zirconium (Zr) added to each of the above materials may also be used.

[0074] It is preferable to give the upper and lower ends of the insulator 763 curvature. This curvature can be achieved by using a positive-type photosensitive acrylic resin as the insulator 763. Alternatively, the insulator 763 can be made with a negative-type or positive-type photosensitive resin to achieve this curvature.

[0075] <About the wet method> Wet processes include inkjet printing, spin coating, coating, nozzle printing, and gravure printing. Solvents used in wet processes include, for example, chlorine-based solvents such as dichloroethane, trichloroethane, chlorobenzene, or dichlorobenzene. Other solvents include ether-based solvents such as tetrahydrofuran, dioxane, anisole, or methylanisole. Other solvents include aromatic hydrocarbon solvents such as toluene, xylene, mesitylene, ethylbenzene, hexylbenzene, or cyclohexylbenzene. Other solvents include aliphatic hydrocarbon solvents such as cyclohexane, methylcyclohexane, pentane, hexane, heptane, octane, nonane, decane, dodecane, or bicyclohexyl. Other solvents include ketone-based solvents such as acetone, methyl ethyl ketone, benzophenone, or acetophenone. Other solvents include ester-based solvents such as ethyl acetate, butyl acetate, ethyl cellosolve acetate, methyl benzoate, or phenyl acetate. Other solvents include polyhydric alcohol-based solvents such as ethylene glycol, glycerin, or hexanediol. Other solvents include alcohol-based solvents such as isopropyl alcohol or cyclohexanol. Other solvents include sulfoxide-based solvents such as dimethyl sulfoxide. Other solvents include amide-based solvents such as methylpyrrolidone or dimethylformamide. Two or more solvents selected from the above materials can also be used as a mixture.

[0076] <About inkjet printers> An inkjet device has a nozzle. Droplets are applied from an opening in the nozzle. The diameter of this opening (also called the nozzle diameter) is between a few micrometers and several tens of micrometers. The part containing the nozzle is sometimes called the head of the inkjet device. In order to apply droplets, the inkjet device is equipped with a control unit for droplet ejection. The control unit has a piezoelectric element (also called a piezo element) and can apply droplets by changing the volume of the ink tank connected to the nozzle using a pressure element. The amount of droplet can be determined according to the nozzle diameter, but for example, it can be between a few parts per drop and several tens of parts per drop. Depending on the material contained in the droplet, 1 part per droplet can be considered to be the amount that forms a cube of about 10 micrometers.

[0077] As display panels become higher resolution, miniaturization of the aperture 764 is desired. However, the nozzle diameter of inkjet devices has limitations in terms of miniaturization due to mechanical processing. In other words, the aperture 764 becomes smaller than the nozzle diameter. This can result in the ink droplet overflowing from the aperture (see Figure 1C, etc.). In such cases, processing using a resist mask (see Figures 1D, 1E, etc.) can produce a high-resolution display panel.

[0078] <About the Resist Mask (RES)> Negative or positive type materials can be used for the resist mask. A resist mask is formed by creating a resist material and exposing it with a specific light. With a negative type, the exposed areas have reduced solubility in the developer, so after development, the exposed areas remain. In other words, the exposed areas are used as the resist mask. With a positive type, the exposed areas have increased solubility in the developer, so after development, the unexposed areas remain. In other words, the unexposed areas are used as the resist mask. Excimer lasers, electron beams, or ultraviolet light can be used as the light source for exposure. Using a resist mask makes it possible to perform fine processing with dimensions of several tens of nanometers to 10 μm, preferably 100 nm to 5 μm.

[0079] <About light-emitting elements> Figures 5A to 5C show schematic diagrams of single-structure light-emitting devices. First, the light-emitting device shown in Figure 5A has an anode 101, a cathode 102, and an EL layer 103 which is an organic compound layer. The anode 101 or cathode 102 corresponds to the first electrode 762. The EL layer 103 has a hole transport region 120, an emissive layer 113, and an electron transport region 121.

[0080] The light-emitting layer 113 has at least an organic compound having light-emitting properties, the hole transport region 120 has at least an organic compound having hole transport properties, and the electron transport region 121 has at least an organic compound having electron transport properties. In the present invention, at least one of these organic compounds can be formed by a wet method.

[0081] The hole transport region 120 has the function of transporting holes between the anode 101 and the light-emitting layer 113. Specifically, the hole transport region 120 may have a hole injection layer 111 and a hole transport layer 112, but hole transport is also possible if it has either the hole injection layer 111 or the hole transport layer 112. The hole transport region 120 may have a material with a skeleton that has relatively high hole transport properties. That is, the hole injection layer 111 and the hole transport layer 112 may have a material with a skeleton that has relatively high hole transport properties. Examples of skeletons with high hole transport properties include arylamine skeletons, pyrrole skeletons, carbazole skeletons, or thiophene skeletons, which are π-electron-rich heteroaromatic ring skeletons.

[0082] The electron transport region 121 may have an electron transport layer 114 and an electron injection layer 115, but electron transport is also possible if it has either the electron transport layer 114 or the electron injection layer 115.

[0083] The electron injection layer 115 may be a layer containing an alkali metal, an alkaline earth metal, or a compound or complex thereof. Specifically, examples include sodium fluoride (NaF), lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), or 8-hydroxyquinolinatolithium (abbreviated as Liq). The electron injection layer 115 may also be an electron transport layer containing an alkali metal or alkaline earth metal or a compound thereof, or an electride. Examples of electrides include a substance obtained by adding electrons to a mixed oxide of calcium and aluminum at a high concentration.

[0084] Furthermore, using sodium fluoride in the electron injection layer 115 is preferable because it improves the electron transport properties and water resistance of the light-emitting element. When the electron injection layer 115 having sodium fluoride is analyzed by ToF-SIMS, Na2F + , NaF2 - Na2F3 - Signals originating from various anions or cations with different numbers of sodium-fluorine bonds are observed.

[0085] Alternatively, a layer containing an alkaline earth metal may be provided as an electron injection layer 115 in contact with the cathode 102. A layer containing barium can be used as the alkaline earth metal layer. This is preferable because it improves the electron injection from the cathode 102.

[0086] Furthermore, the barium-containing layer may also contain a heteroaromatic compound. The heteroaromatic compound is preferably an organic compound having a phenanthroline skeleton.

[0087] Furthermore, other functional layers may be provided in the hole transport region 120 and the electron transport region 121. Examples of other functional layers include a carrier block layer, an exciton block layer, or a charge generation layer.

[0088] Furthermore, in the light-emitting element shown in Figure 5B, a charge generation layer 116 is provided instead of the electron injection layer 115 in Figure 5A. The charge generation layer 116 is a layer that, when an electric potential is applied, can inject holes into the layer in contact with the charge generation layer on the cathode side, and can inject electrons into the layer in contact with the charge generation layer on the anode side. The charge generation layer 116 includes at least a P-type layer 117. The P-type layer 117 is preferably formed using a hole-transporting material that can constitute the hole injection layer 111. Alternatively, the P-type layer 117 may be formed by laminating a layer containing an acceptor material and a layer containing a hole-transporting material. When an electric potential is applied to the P-type layer 117 shown in Figure 5B, electrons are injected into at least the electron transport layer 114, and holes are injected into the cathode 102, causing the light-emitting element to operate.

[0089] Furthermore, it is preferable that the charge generation layer 116 includes, in addition to the P-type layer 117, one or both of the following: an electron relay layer 118 and an electron injection buffer layer 119. The electron relay layer 118 is preferably located between the P-type layer 117 and the electron transport layer 114. The electron injection buffer layer 119 is also preferably located between the P-type layer 117 and the electron transport layer 114, and if the electron relay layer 118 is present, the electron injection buffer layer 119 is preferably located between the electron relay layer 118 and the electron transport layer 114.

[0090] In the light-emitting element shown in Figure 5C, multiple light-emitting layers are stacked. Specifically, light-emitting layers 113c, 113b, and 113a are stacked. The light-emitting colors from light-emitting layers 113c, 113b, and 113a are preferably different from each other. The hole transport region 120 may include two layers: a hole injection layer 111 and a hole transport layer 112. The electron transport region 121 may include two layers: an electron injection layer 115 and an electron transport layer 114.

[0091] <About the tandem structure> Figure 5D shows a schematic diagram of a tandem light-emitting element. In the tandem structure, the light-emitting layer 113 has a configuration in which multiple light-emitting units are stacked. Specifically, there are at least a first light-emitting unit 103a and a second light-emitting unit 103b between the anode and the cathode. The first light-emitting unit 103a and the second light-emitting unit 103b can each have a configuration similar to the EL layer 103 shown in Figure 5A, etc., with the first light-emitting unit 103a having at least a hole transport region 120a, a light-emitting layer 113a, and an electron transport region 121a, and the second light-emitting unit 103b having at least a hole transport region 120b, a light-emitting layer 113b, and an electron transport region 121b.

[0092] In the tandem structure, a charge generation layer 116 is provided between the first light-emitting unit 103a and the second light-emitting unit 103b. The first light-emitting unit 103a and the second light-emitting unit 103b may have the same configuration or different configurations. In the case of different configurations, a combination in which the first light-emitting unit 103a and the second light-emitting unit 103b emit white light is preferred. Furthermore, in the case of a combination that emits white light, full-color display becomes possible by using a color filter.

[0093] In a tandem structure, the charge generation layer 116 has the function of injecting electrons into one light-emitting unit and holes into the other light-emitting unit when a voltage is applied to the anode and cathode. That is, when a voltage is applied such that the potential of the anode is higher than the potential of the cathode, the charge generation layer should inject electrons into the first light-emitting unit 103a and holes into the second light-emitting unit 103b.

[0094] The charge generation layer 116 can have the same configuration as the charge generation layer 116 described in Figure 5B. A composite material of an organic compound and a metal oxide is preferred as the material used for the charge generation layer 116 because it has excellent carrier implantation or carrier transport properties, thus enabling low-voltage or low-current driving. If the anode side of the light-emitting unit is in contact with the charge generation layer, the charge generation layer can also play the role of a hole injection layer in the light-emitting unit, so a hole injection layer does not need to be provided in that light-emitting unit.

[0095] Furthermore, an electron injection buffer layer 119, as described in Figure 5B, may be provided as a tandem charge generation layer 116. Note that if the cathode side of the light-emitting unit is in contact with the electron injection buffer layer, the electron injection buffer layer 119 will perform the role of an electron injection layer in the light-emitting unit, and therefore it is not necessarily required to form an electron injection layer in that light-emitting unit.

[0096] The tandem structure arranges multiple light-emitting units between a pair of electrodes, with a charge generation layer between the multiple light-emitting units. This structure enables high-brightness light emission while maintaining a low current density, and also allows for the creation of a long-life device. Furthermore, it enables the realization of a light-emitting device that can be driven at low voltage and consumes low power.

[0097] Furthermore, by making the light-emitting units emit different colors, it is possible to obtain a desired color of light emission from the entire light-emitting element. For example, in a light-emitting element having two light-emitting units, it is possible to obtain a light-emitting element that emits white light as a whole by obtaining red and green light emission from the first light-emitting unit and blue light emission from the second light-emitting unit.

[0098] Furthermore, in the stacked light-emitting units, each light-emitting material may be a phosphorescent material or a fluorescent material.

[0099] Although Figure 5D illustrates a tandem structure with two light-emitting units, a tandem structure with three or more light-emitting units stacked on top of each other is also possible.

[0100] In the light-emitting devices shown in Figures 5A to 5D, the layer on the anode 101 side, such as the hole injection layer 111 or the hole transport layer 112, or the layer in contact with the anode 101, can be formed by a wet process. In this case, it is preferable that the hole transport material includes a material exhibiting acceptor properties. Examples of such acceptor materials include sulfonic acid compounds, fluorine compounds, trifluoroacetic acid compounds, propionic acid compounds, or metal oxides.

[0101] <About ink materials> As the material for droplets applied by the wet method (referred to as ink material), polymer materials, low molecular weight materials, or dendrimers can be used as is. Alternatively, polymer materials, low molecular weight materials, or dendrimers dispersed in a solvent, or polymer materials, low molecular weight materials, or dendrimers dissolved in a solvent, may be used as the ink material. Furthermore, polymer materials may be obtained by mixing one or more monomers. When mixing one or more monomers, the mixed ink material may be applied, and after application, crosslinking, condensation, polymerization, coordination, or the formation of salt bonds may be induced by heating or energy light irradiation.

[0102] Furthermore, the above ink material may include other functional materials such as surfactants or viscosity modifiers.

[0103] The amine compound used in the ink material can be a primary amine, a secondary amine, or a tertiary amine, with secondary amines being particularly preferred. When applying an ink material made by mixing multiple monomers and polymerizing it after application, it is preferable to use a secondary amine and an aryl sulfonic acid as the monomers.

[0104] The secondary amine preferably has a substituted or unsubstituted aryl group having 6 to 14 carbon atoms, or a substituted or unsubstituted π-electron-rich heteroaryl group having 6 to 12 carbon atoms. Examples of the aryl group include a phenyl group, biphenyl group, naphthyl group, fluorenyl group, phenantrenyl group, or anthryl group. The phenyl group is preferred because it has good solubility and lower raw material costs. Examples of the heteroaryl group include a carbazole skeleton, pyrrole skeleton, thiophene skeleton, furan skeleton, or imidazole skeleton.

[0105] Furthermore, it is preferable for secondary amines to have multiple bonds formed via arylamines or heteroarylamines, as this improves the film quality after coating, heating, or curing. When there are many of the above bonds, it is preferable that oligomers or polymers are formed.

[0106] Furthermore, secondary amines may have multiple amine skeletons. In this case, some of the amine skeletons may be primary or tertiary amines. However, it is preferable that the proportion of secondary amines is greater than the proportion of primary or tertiary amines. The number of multiple amine skeletons is preferably 1000 or less, more preferably 10 or less, and the molecular weight of the secondary amine is preferably 100,000 or less. In addition, using fluorine-substituted amine skeletons is preferable because it improves compatibility with fluorine-substituted compounds.

[0107] <General formula> As a secondary amine, an organic compound represented by the following general formula (G1) is preferred.

[0108] [ka]

[0109] However, in the above general formula (G1), Ar 11 ~Ar 13 One or more of these represent hydrogen, and Ar 14 ~Ar 17represents a substituted or unsubstituted aromatic ring having 6 to 14 carbon atoms. As the aromatic ring having 6 to 14 carbon atoms, a benzene ring, a bisbenzene ring, a naphthalene ring, a fluorene ring, a phenanthrene ring, or an anthracene ring can be used. Here, Ar 12 and Ar 16 、Ar 14 and Ar 16 、Ar 11 and Ar 14 、Ar 14 and Ar 15 、Ar 15 and Ar 17 、Ar 13 and Ar 17 may be bonded to each other to form a ring. Further, p represents an integer of 0 or more and 1000 or less, preferably 0 or more and 3 or less. In addition, the molecular weight of the organic compound represented by the general formula (G1) is preferably 100,000 or less.

[0110] As the tertiary amine, for example, an organic compound represented by the following general formula (G2) is preferable.

[0111] [[ID=Y32]]

Chemical formula

[0112] However, in the general formula (G2), Ar 21 to Ar 23 represent a substituted or unsubstituted aryl group having 6 to 14 carbon atoms, and these may be bonded to each other to form a ring. Further, when Ar 21 to Ar 23 have a substituent, the substituent may be a group in which a plurality of diarylamino groups or carbazolyl groups are linked. In addition, the organic compound represented by the general formula (G2) may have an ether bond, a sulfide bond, or a bond via an amine. When having a plurality of aryl groups, solubility in a solvent is improved through these bonds, which is preferable. Further, the organic compound represented by the general formula (G2) may have an alkyl group as a substituent, and in this case, it may also have an ether bond, a sulfide bond, or a bond via an amine.

[0113] <Structural formula> As specific examples of secondary amines, it is preferable to use organic compounds represented by the following structural formulas (Am2-1) to (Am2-32). The organic compounds represented by the following structural formulas (Am2-1) to (Am2-32) have an NH group.

[0114] [ka]

[0115] [ka]

[0116] [ka]

[0117] [ka]

[0118] [ka]

[0119] Amine compounds can be mixed with sulfonic acid compounds and used in ink materials. When mixed with sulfonic acid compounds, carriers are easily generated, improving conductivity. Mixing with sulfonic acid compounds is sometimes referred to as p-doping. Using a secondary amine as the amine compound is preferable because it can form bonds through dehydration reactions with the mixed sulfonic acid compound. When the compound to be mixed with the amine compound is a fluoride, using a fluoride as the amine compound, such as those with the above structural formulas (Am2-2), (Am2-22) to (Am2-28), or (Am2-31), is preferable because it improves compatibility.

[0120] Furthermore, thiophene derivatives may be used instead of secondary amines. Specific examples of thiophene derivatives include organic compounds represented by structural formulas (T-1) to (T-4) below, polythiophene, or poly(3,4-ethylenedioxythiophene) (PEDOT). Mixing thiophene derivatives with sulfonic acid compounds facilitates carrier generation and improves conductivity. This mixing with sulfonic acid compounds is sometimes referred to as p-doping.

[0121] [ka]

[0122] Sulfonic acid compounds are materials that exhibit acceptability. Examples of sulfonic acid compounds include aryl sulfonic acids. Aryl sulfonic acids only need to have a sulfo group, and can be sulfonic acids, sulfonates, alkoxysulfonic acids, halogenated sulfonic acids, or sulfonic acid anions. These sulfo groups may be multiple. The aryl group of the aryl sulfonic acid can be a substituted or unsubstituted aryl group having 6 to 16 carbon atoms. Examples of aryl groups include phenyl, biphenyl, naphthyl, fluorenyl, phenantrenyl, anthryl, or pyrenyl groups, with naphthyl groups being particularly preferred due to their good solubility and transportability in solvents. Aryl sulfonic acids may also have multiple aryl groups. Furthermore, aryl sulfonic acids with fluorine-substituted aryl groups are preferred because they allow for adjustment of the LUMO level to be deeper (larger in the negative direction). Furthermore, arylsulfonic acid may have ether bonds, sulfide bonds, or amine-mediated bonds. When it has multiple aryl groups, these bonds improve solubility in the solvent and are therefore preferable. Also, arylsulfonic acid may have alkyl groups as substituents, or the substituents may be ether bonds, sulfide bonds, or amine-mediated bonds. Furthermore, arylsulfonic acid may be substituted for part of the polymer. Polyethylene, nylon, polystyrene, or polyfluorenylene can be used as the polymer, but polystyrene or polyfluorenylene are preferred due to their good conductivity.

[0123] Specific examples of compounds containing arylsulfonic acid (arylsulfonic acid compounds) include, for example, organic compounds represented by structural formulas (S-1) to (S-15) below. Polymers having sulfo groups, such as poly(4-styrenesulfonic acid) (PSS), can also be used. By using arylsulfonic acid compounds, electrons can be accepted from shallow HOMO electron donors (amine compounds, carbazole compounds, or thiophene compounds, etc.), and by mixing with the electron donor, hole implantation or hole transport from the electrode can be achieved. By using a fluorine compound instead of the arylsulfonic acid compound, the LUMO level can be adjusted to be deeper (having a more negative energy level).

[0124] [ka]

[0125] [ka]

[0126] [ka]

[0127] [ka]

[0128] The ink material obtained by mixing the above-mentioned secondary amine and sulfonic acid compound may further contain a tertiary amine. Tertiary amines are more electrochemically and photochemically stable than secondary amines, and when mixed, they exhibit good hole transport properties. As the tertiary amine, for example, organic compounds represented by the following structural formulas (Am3-1) to (Am3-7) are preferred. In addition to the tertiary amine, other materials with hole transport properties may be appropriately mixed into the ink material.

[0129] [ka]

[0130] [ka]

[0131] In addition to aryl sulfonic acid compounds, cyano compounds such as tetracyanoquinodimethane compounds can also be used as electron acceptors. Specifically, examples include 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) or dipyradino[2,3-f:2′,3′-h]quinoxaline-2,3,6,7,10,11-hexacarbonnitrile (HAT-CN6).

[0132] Furthermore, it is preferable that the ink material obtained by mixing the above monomers contains either or both of a 3,3,3-trifluoropropyltrimethoxysilane compound or a phenyltrimethoxysilane compound, as this improves wettability when a film is formed by a wet process.

[0133] When a layer deposited by a wet process using an ink material containing at least two monomers, such as a secondary amine or thiophene and an aryl sulfonic acid, is measured by ToF-SIMS, a signal is observed around m / z=80 in the negative mode. The signal at m / z=80 originates from the SO3 anion in the aryl sulfonic acid. On the other hand, signals originating from the amine monomer are not easily observed in the above layer. If a light-emitting device having this layer exhibits sufficient luminescence, it is evidence that the layer possesses sufficient hole transport capability. When the above signal and other analytical results are obtained in a light-emitting device that can emit light, it is found that the layer has sufficient hole transport capability, and the absence of observation of the amine or other backbone responsible for hole transport capability suggests that the monomers are bonded together to form a polymer compound film. The above analytical results indicate that the layer was formed by a wet process.

[0134] Furthermore, the sulfonic acid compounds represented by the above structural formulas (S-1) or (S-2) are preferred because they have many sulfo groups, can form three-dimensional bonds with amine compounds, and tend to stabilize the film. In addition to the signal at m / z=80, a signal at m / z=901 is observed in the negative mode in the layer prepared using the aryl sulfonic acid compound. A signal at m / z=328 is also observed as a product ion.

[0135] <Luminescent materials> In one embodiment of the present invention, it is preferable to use an iridium complex represented by the following structural formula as the light-emitting material. The iridium complex shown below is preferable because it has an alkyl group, making it readily soluble in solvents and easy to prepare as an ink material.

[0136] [ka]

[0137] Furthermore, when the luminescent layer containing the iridium complex represented by the above structural formula is measured by ToF-SIMS, it has been found that in the positive mode, signals appear at m / z=1676 or at the product ions m / z=1181 and m / z=685.

[0138] <About top-emission type> Figure 5E shows an example of a top-emission type structure, with an upward arrow indicating the direction of light extraction. The top-emission type has a high aperture ratio because the arrangement of semiconductor elements does not need to be considered. In the case of the top-emission type, the anode 101 corresponds to the first substrate 760 shown in Figure 1, etc.

[0139] <About bottom emission type> Figure 5F shows an example of a bottom emission type structure, with the direction of light extraction indicated by a downward arrow. In the bottom emission type, the arrangement of semiconductor elements formed on the first substrate 760 should be considered, but a high aperture ratio can be maintained by using highly transparent semiconductor elements. In the case of the bottom emission type as well, the anode 101 corresponds to the first substrate 760 shown in Figure 1, etc.

[0140] The details described in this embodiment can be used in combination with other embodiments.

[0141] (Embodiment 2) A second method for manufacturing a display panel according to one embodiment of the present invention will be described. In the method for manufacturing a display panel according to one embodiment of the present invention, the organic compound layer of the light-emitting element is formed by a wet method. In the second manufacturing method, the spin coating method will be used as an example of the wet method. The spin coating method is preferable because it can uniformly form a thin film on a large substrate. Furthermore, the droplets formed by the spin coating method are applied over the entire display area. In the second manufacturing method, a method for manufacturing a display panel when droplets are applied over the entire display area will be described. It goes without saying that the organic compound layer of the light-emitting element may be formed using a wet method other than the spin coating method.

[0142] As shown in Figure 2A, a first electrode 762 and an insulator 763 are formed on the first substrate 760, and an opening 764 is formed in the insulator 763 so that the first electrode 762 is exposed. For other configurations, please refer to the description of Figure 1A and the like above.

[0143] As shown in Figure 2B, a liquid containing an organic compound is applied to the first substrate 760 by spin coating while it is rotating. For other configurations, please refer to the explanation in Figure 1B and other figures above.

[0144] The liquid is applied across the display area. That is, as shown in Figure 2C, the liquid is applied across at least multiple openings to form a material layer 772.

[0145] Therefore, as shown in Figure 2D, after forming the mask layer 779a, the first resist mask RES1 is formed and the material layer 772 is processed. For other configurations, please refer to the explanation of Figure 1D and other figures described above. The mask layer 779a is a layer that will be removed later. The mask layer 779a can be formed from a material having a metal element, a metal compound, silicon, silicon oxide, or silicon nitride.

[0146] As shown in Figure 3A, a material layer 773a is obtained by processing using the first resist mask RES1. At this time, the mask layer 779a is also processed to become the mask layer 779b. For other configurations, please refer to the explanation in Figure 1E and other figures above.

[0147] Next, as shown in Figure 3B, while leaving the first resist mask RES1 and mask layer 779b in place, the first substrate 760 is rotated and a liquid containing the organic compound of the light-emitting element is applied by spin coating. Leaving the first resist mask RES1 and mask layer 779b in place prevents the material layer 773a from being exposed to subsequent processing. Furthermore, if the etching selectivity ratio between material layer 773a and material layer 782 cannot be obtained, either or both of the first resist mask RES1 and mask layer 779b may be used as etching stoppers.

[0148] Of course, the liquid containing the organic compound of the light-emitting element may be applied with the first resist mask RES1 removed, or with the first resist mask RES1 and the mask layer 779b removed.

[0149] As shown in Figure 3C, after forming the mask layer 789a, a second resist mask RES2 is formed to process the material layer 782. For other configurations, please refer to the explanation in Figure 1D above. The mask layer 789a can be formed in the same way as the mask layer 779a.

[0150] As shown in Figure 3D, a material layer 783a can be obtained by processing using the second resist mask RES2. At this time, the mask layer 789a is also processed to become the mask layer 789b. For other configurations, please refer to the explanation in Figure 1E and other figures above.

[0151] As shown in Figure 4A, the first substrate 760 is rotated while a liquid containing the organic compound of the light-emitting element is applied by spin coating, leaving the first resist mask RES1 and mask layer 779b, and the second resist mask RES2 and mask layer 789b in place. Leaving the first resist mask RES1 and mask layer 779b, and the second resist mask RES2 and mask layer 789b in place prevents the material layers 773a and 783a from being exposed to subsequent processing. Furthermore, if the etching selectivity ratio between material layers 773a and 783a and material layer 792 cannot be obtained, one or all of the first resist mask RES1 and mask layer 779b, and the second resist mask RES2 and mask layer 789b may be used as etching stoppers.

[0152] Of course, the liquid containing the organic compound of the light-emitting element may be applied with the first resist mask RES1 and the second resist mask RES2 removed, or with the first resist mask RES1 and mask layer 779b and the second resist mask RES2 and mask layer 789b removed.

[0153] As shown in Figure 4B, after forming the mask layer 799a, a third resist mask RES3 is formed to process the material layer 792. For other configurations, please refer to the explanation in Figure 1D above. The mask layer 799a can be formed in the same way as the mask layer 779a.

[0154] As shown in Figure 4C, a material layer 793a can be obtained by processing using the third resist mask RES3. At this time, the mask layer 799a is also processed to become the mask layer 799b. For other configurations, please refer to the explanation in Figure 1E and other figures above.

[0155] As shown in Figure 4D, when the first resist mask RES1 to the third resist mask RES3 and the mask layers 779b, 789b, and 799b are removed, the microfabricated material layers 773b, 783b, and 793b can be obtained.

[0156] For example, material layer 773b can be a red light-emitting element, material layer 783b a green light-emitting element, and material layer 793b a blue light-emitting element. A configuration with these different colors may be called an SBS (Side By Side) structure. Furthermore, although an example with a configuration having three colors has been given, the system is not limited to this. For example, a configuration with four or more colors may also be used.

[0157] This manufacturing method makes it possible to provide a high-definition display panel with reduced crosstalk.

[0158] The details described in this embodiment can be used in combination with other embodiments.

[0159] (Embodiment 3) In this embodiment, the method for manufacturing the display panel will be explained using a flowchart.

[0160] <Method for preparing 1A> As shown in step S11 of Figure 6A, a semiconductor element, an insulator 763 having a first electrode 762 and an opening 764 of the light-emitting element is formed on the first substrate 760. Such step S11 includes a semiconductor element fabrication process, also known as a backplane process.

[0161] Next, as shown in step S12 of Figure 6A, a layer having a hole-transporting material is fabricated by a wet process. For example, it can be fabricated using the inkjet method shown in Embodiment 1. Since the layer having the hole-transporting material can be used in common with each light-emitting element, the layer having the hole-transporting material may be formed over the display area.

[0162] Next, as shown in step S13 of Figure 6A, a layer having a hole-transporting material is processed using a resist mask to form the hole-transporting layer for each light-emitting element. That is, a so-called photolithography process is performed in step S13. When a layer having a hole-transporting material is formed in the display area in step S12, a layer having a hole-transporting material is also formed on the upper surface of the insulator 763. It is preferable to remove the layer having a hole-transporting material from unnecessary areas such as the upper surface of the insulator 763. For this reason, a resist mask should be formed for each light-emitting element.

[0163] Next, as shown in step S14 of Figure 6A, layers containing each light-emitting material are fabricated by a wet process. For example, they can be fabricated using the inkjet method shown in Embodiment 1. To prevent color mixing, it is preferable to apply the layers using multiple nozzles so that the droplets containing each light-emitting material do not overlap.

[0164] Next, as shown in step S15 of Figure 6A, a layer having an electron-transporting material and a second electrode are formed. In step S15, a vapor deposition method is used, but a wet method may also be used.

[0165] Next, as shown in step S16 of Figure 6A, a protective layer is formed on the second electrode. The protective layer can be formed by sputtering or plasma CVD. The protective layer may contain an inorganic material, and silicon oxide, silicon nitride, silicon oxynitride, or aluminum oxide can be used. A laminated structure in which these materials are stacked may also be used for the protective layer.

[0166] Next, as shown in step S17 of Figure 6A, the product is sealed with a second substrate. For sealing, a solid sealing structure or a hollow sealing structure can be applied. A solid sealing structure is a structure that seals with an adhesive such as an organic resin. In a solid sealing structure, the second substrate can be omitted. A hollow sealing structure is a structure that seals by filling the enclosed space with an inert gas (such as nitrogen or argon).

[0167] <Method for preparing Part 1B> The manufacturing method for 1B, which differs from the manufacturing method for 1A described above, will now be explained.

[0168] Step S11 in Figure 6B is the same as step S11 in Figure 6A.

[0169] Next, step S22 in Figure 6B includes a step of forming a layer having a hole-transporting material by a wet process, and a step of forming layers having each light-emitting material by a wet process. Step S22 does not involve the so-called photolithography process. The step of forming a layer having a hole-transporting material by a wet process is the same as step S12 in Figure 6A. The step of forming layers having each light-emitting material by a wet process is the same as step S14 in Figure 6A.

[0170] Next, in step S23 of Figure 6B, a so-called photolithography process is performed on the layer having the hole transport material and the layer having each light-emitting material. The photolithography process is the same as in step S13 of Figure 6A. The photolithography process makes it possible to remove the layer having the hole transport material etc. that has formed in unnecessary areas.

[0171] Next, steps S15, S16, and S17 in Figure 6B are performed. These steps are the same as steps S15, S16, and S17 in Figure 6A, respectively.

[0172] <Second manufacturing method> A second manufacturing method, which differs from the manufacturing method described in 1A and 1B above, will now be described.

[0173] Steps S11 and S12 in Figure 7 are the same as steps S11 and S12 in Figure 6A, respectively.

[0174] Next, in step S24r of Figure 7, a layer having the light-emitting material (first light-emitting material) of the first light-emitting layer is fabricated by a wet method. For example, it can be fabricated using the spin coating method shown in Embodiment 2.

[0175] Next, in step S25r of Figure 7, a so-called photolithography process is performed on the layer having the hole transport material and the layer having the first light-emitting material. The layer having the first light-emitting material formed by the wet process may extend beyond the desired area. Therefore, it is preferable to perform the so-called photolithography process after forming the layer having the first light-emitting material by the wet process. In this case, the previously formed layer having the hole transport material may also be processed at the same time. At this point, the resist mask provided when processing the layer having the first light-emitting material can be left in place, and the process can proceed to the next step.

[0176] Next, in step S26g of Figure 7, a layer having the light-emitting material (second light-emitting material) of the second light-emitting layer is fabricated by a wet method. For example, it can be fabricated using the spin coating method shown in Embodiment 2.

[0177] Next, in step S27r of Figure 7, a so-called photolithography process is performed on the layer having the hole transporting material and the layer having the second light-emitting material. The layer having the second light-emitting material formed by the wet process may extend beyond the desired area. Therefore, it is preferable to perform the so-called photolithography process after forming the layer having the second light-emitting material by the wet process. In this case, the previously formed layer having the hole transporting material may also be processed at the same time. Furthermore, if the resist mask provided when processing the layer having the first light-emitting material remains, the first light-emitting layer can be protected in this step. At this point, the resist mask provided when processing the layer having the second light-emitting material can also be left in place, and the process can proceed to the next step.

[0178] Next, in step S28b of Figure 7, the layer having the light-emitting material (third light-emitting material) of the third light-emitting layer is fabricated by a wet method. For example, it can be fabricated using the spin coating method shown in Embodiment 2.

[0179] Next, in step S29r of Figure 7, a so-called photolithography process is performed on the layer having the hole transporting material and the layer having the third light-emitting material. The layer having the third light-emitting material formed by the wet process may extend beyond the desired area. Therefore, it is preferable to perform the so-called photolithography process after forming the layer having the third light-emitting material by the wet process. In this case, the previously formed layer having the hole transporting material may also be processed at the same time. If the resist mask provided when processing the layer having the first light-emitting material and the layer having the second light-emitting material remains, the first light-emitting layer and the second light-emitting layer can be protected in this step.

[0180] After performing the three photolithography steps described above, it is recommended to remove all of the resist masks.

[0181] Next, steps S15, S16, and S17 in Figure 7 are performed. These steps are the same as steps S15, S16, and S17 in Figure 6A, respectively.

[0182] The details described in this embodiment can be used in combination with other embodiments.

[0183] (Embodiment 4) A display module according to one aspect of the present invention will be described.

[0184] Figure 8A shows a top view of an insulator 763 having an opening 764 in the display panel. In Figure 8A, two pixels (pixel 703(i,j) and pixel 703(i+1,j)) are shown, with pixel 703(i+1,j) being adjacent to pixel 703(i,j) in the x-axis direction. Pixel 703(i,j) has a red pixel 702R(i,j), a green pixel 702G(i,j), and a blue pixel 702B(i,j). Similarly, pixel 703(i+1,j) also has a red pixel, a green pixel, and a blue pixel.

[0185] Figure 8B shows an overall view of the display module 700. The display module 700 has a display area 231, in which multiple pixels 703, including the two pixels described above, are formed in a matrix. A source driver area SD and a gate driver area GD are formed on the outer periphery of the display area 231. Signals supplied to the source driver area SD are input via terminal 519A. Signals supplied to the gate driver area GD are input via terminal 519B.

[0186] Figure 9A is a cross-sectional view illustrating the configuration of a display module according to one embodiment of the present invention. Figure 9A is a diagram illustrating the cross-section at the cutting lines X1-X2, X3-X4, and pixel 703(i,j) shown in Figure 8B.

[0187] Pixel circuits 530G(i,j) and 530B(i,j) are formed on the first substrate 760. The pixel circuits will be described later. Light-emitting elements 550G(i,j) and 550B(i,j) are formed which are electrically connected to pixel circuits 530G(i,j) and 530B(i,j), respectively. The green pixel 703G(i,j) has a pixel circuit 530G(i,j) and a light-emitting element 550G(i,j) electrically connected thereto. The blue pixel 703B(i,j) has a pixel circuit 530B(i,j) and a light-emitting element 550B(i,j) electrically connected thereto.

[0188] The second substrate 768 is sealed using an adhesive layer 705 located above the light-emitting element. The FPC is electrically connected to terminals 519A and 519B.

[0189] Examples of transistor configurations Figure 9B illustrates a semiconductor element that can be used in the pixel circuit of a display panel according to one embodiment of the present invention. The semiconductor element can be a transistor M21.

[0190] Transistor M21 is formed, for example, on insulating film 501C.

[0191] 《Example 1 of semiconductor film 508 configuration》 Transistor M21 has a semiconductor film 508. For example, a semiconductor containing group 14 elements can be used for the semiconductor film 508. Specifically, a semiconductor containing silicon can be used for the semiconductor film 508.

[0192] [Hydrogenated amorphous silicon] For example, hydrogenated amorphous silicon can be used for the semiconductor film 508. Alternatively, microcrystalline silicon or the like can be used for the semiconductor film 508. This makes it possible to provide a functional panel with less display unevenness than, for example, a functional panel using polysilicon for the semiconductor film 508. Alternatively, it makes it easier to enlarge the functional panel.

[0193] [Polysilicon] For example, polysilicon can be used for the semiconductor film 508. This allows for a higher field-effect mobility of the transistor compared to, for example, a transistor using hydrogenated amorphous silicon for the semiconductor film 508. Alternatively, the driving capability can be increased compared to a transistor using hydrogenated amorphous silicon for the semiconductor film 508. Alternatively, the aperture ratio of the pixels can be improved compared to a transistor using hydrogenated amorphous silicon for the semiconductor film 508.

[0194] Alternatively, for example, the reliability of the transistor can be improved compared to a transistor using hydrogenated amorphous silicon as the semiconductor film 508.

[0195] Alternatively, the temperature required for transistor fabrication can be lowered compared to, for example, transistors using single-crystal silicon.

[0196] Alternatively, the semiconductor film used for the transistors in the drive circuit can be formed using the same process as the semiconductor film used for the transistors in the pixel circuit. Alternatively, the drive circuit can be formed on the same substrate as the substrate on which the pixel circuit is formed. Alternatively, the number of components constituting the electronic device can be reduced.

[0197] [Single-crystal silicon] For example, single-crystal silicon can be used for the semiconductor film 508. This allows for higher resolution than, for example, a functional panel using hydrogenated amorphous silicon for the semiconductor film 508. Alternatively, it is possible to provide a functional panel with less display unevenness than a functional panel using polysilicon for the semiconductor film 508. Alternatively, for example, smart glasses or a head-mounted display can be provided.

[0198] 《Example 2 of the configuration of semiconductor film 508》 For example, a metal oxide can be used in the semiconductor film 508. Specifically, as the metal oxide, an oxide semiconductor containing indium, an oxide semiconductor containing indium, gallium, and zinc, or an oxide semiconductor containing indium, gallium, zinc, and tin can be used.

[0199] Transistors with a metal oxide semiconductor film 508 exhibit lower leakage current in the off state compared to transistors with amorphous silicon semiconductor films. Therefore, it is preferable to use transistors with a metal oxide semiconductor film 508 in switches and the like. This allows the floating node potential to be maintained for a longer time than in circuits using transistors with amorphous silicon semiconductor films. Furthermore, pixel circuits using transistors with a metal oxide semiconductor film 508 can maintain the image signal for a longer period compared to pixel circuits using transistors with amorphous silicon semiconductor films. Specifically, while suppressing flicker, the selection signal can be supplied at a frequency of less than 30 Hz, preferably less than 1 Hz, and more preferably less than once per minute. As a result, fatigue accumulated by the user of the information processing device can be reduced. Additionally, power consumption associated with operation can be reduced.

[0200] Transistor M21 comprises a conductive layer 504, a conductive layer 512A, and a conductive layer 512B.

[0201] The conductive layer 504 has a region that overlaps with region 508C, and the conductive layer 504 functions as a gate. Region 508C corresponds to the channel formation region.

[0202] The conductive layer 512A has either the function of a source electrode or a drain electrode, and the conductive layer 512B has either the function of a source electrode or a drain electrode.

[0203] The semiconductor film 508 has regions 508A and 508B, which may be referred to as the impurity region, source region and drain region, respectively. Region 508A is electrically connected to the conductive layer 512A, and region 508B is electrically connected to the conductive layer 512B.

[0204] The insulating film 506 comprises a region sandwiched between the semiconductor film 508 and the conductive layer 504. The insulating film 506 functions as a gate insulating film.

[0205] Furthermore, an insulating layer 516 is provided covering the conductive layer 504. The insulating layer 516 has a structure in which a first insulating layer 516A and a second insulating layer 516B are laminated together.

[0206] Furthermore, the conductive layer 524 can be used as the back gate of the transistor, and the conductive layer 524 can be located beneath the semiconductor film. A structure in which gates are positioned above and below the semiconductor film is sometimes called a dual-gate structure. The conductive layer 524 has a region that sandwiches the semiconductor film 508 between itself and the conductive layer 504. The conductive layer 524 functions as a gate. The insulating film 501D is sandwiched between the semiconductor film 508 and the conductive layer 524 and functions as a gate insulating film.

[0207] Furthermore, the insulating layer 518 is provided covering the conductive layers 512A and 512B.

[0208] Furthermore, the semiconductor film used for the transistors in the pixel circuit can be formed simultaneously with the semiconductor film used for the transistors in the drive circuit. In other words, a semiconductor film with the same composition as the semiconductor film used for the transistors in the pixel circuit can be used for the transistors in the drive circuit.

[0209] <Pixel Circuit> Figure 10 shows the pixel circuit 530(i,j). The pixel circuit 530(i,j) has three switching elements, each containing a transistor. Transistor M21, which is electrically connected to the light-emitting element 550G(i,j), is a driving transistor and is different from a switching element. Each transistor has the configuration shown in Figure 9B, and a so-called dual-gate structure can be used. Furthermore, the pixel circuit 530(i,j) has conductive layers G1(i), G2(i), S1g(j), S2g(j), V0, ANO, and VCOM2.

[0210] For example, conductive layer G1(i) is supplied with a first selection signal, conductive layer G2(i) is supplied with a second selection signal, conductive layer S1g(j) is supplied with an image signal, and conductive layer S2g(j) is supplied with a control signal.

[0211] The pixel circuit 530(i,j) is supplied with a first selection signal, and the pixel circuit 530(i,j) acquires an image signal based on the first selection signal. For example, the first selection signal can be supplied using the conductive layer G1(i). Alternatively, the image signal can be supplied using the conductive layer S1g(j). The operation of supplying the first selection signal and causing the pixel circuit 530(i,j) to acquire the image signal can be called "writing".

[0212] The pixel circuit 530(i,j) includes a capacitor C21 and a node N21. The pixel circuit 530(i,j) also includes a node N22, a capacitor C22, and a switch SW23.

[0213] Transistor M21 comprises a gate electrically connected to node N21, a first electrode electrically connected to light-emitting element 550(i,j), and a second electrode electrically connected to conductive layer ANO.

[0214] Switch SW21 has a first terminal electrically connected to node N21, a second terminal electrically connected to conductive layer S1g(j), and a function to control the conduction state or non-conduction state based on the potential of conductive layer G1(i).

[0215] Switch SW22 has a first terminal electrically connected to the conductive layer S2g(j) and a function to control the conduction state or non-conduction state based on the potential of the conductive layer G2(i).

[0216] Capacitor C21 comprises a conductive layer electrically connected to node N21 and a conductive layer electrically connected to the second terminal of switch SW22.

[0217] This allows the image signal to be stored in node N21. Alternatively, the potential of node N21 can be changed using switch SW22. Alternatively, the intensity of the light emitted by light-emitting element 550(i,j) can be controlled using the potential of node N21.

[0218] The details described in this embodiment can be used in combination with other embodiments.

[0219] (Embodiment 5) In this embodiment, the configuration of an information processing device according to one aspect of the present invention will be described with reference to the figures.

[0220] Figures 11A to 13B illustrate the configuration of an information processing device according to one embodiment of the present invention. Figure 11A is a block diagram of the information processing device, and Figures 11B to 11E are perspective views illustrating the configuration of the information processing device. Figures 12A to 12E are perspective views illustrating the configuration of the information processing device. Figures 13A and 13B are perspective views illustrating the configuration of the information processing device.

[0221] <Information Processing Device> The information processing device 5200B described in this embodiment includes an arithmetic unit 5210 and an input / output device 5220 (see Figure 11A).

[0222] The arithmetic unit 5210 has a function to be supplied with operation information and a function to supply image information based on the operation information.

[0223] The input / output device 5220 includes a display unit 5230, an input unit 5240, a detection unit 5250, a communication unit 5290, a function for supplying operation information, and a function for supplying image information. Furthermore, the input / output device 5220 includes a function for supplying detection information, a function for supplying communication information, and a function for receiving communication information.

[0224] The input unit 5240 has a function to supply operation information. For example, the input unit 5240 supplies operation information based on the user's operation of the information processing device 5200B.

[0225] Specifically, the input unit 5240 can use a keyboard, hardware buttons, pointing device, touch sensor, illuminance sensor, imaging device, voice input device, eye-tracking device, posture detection device, etc.

[0226] The display unit 5230 includes a display panel and a function for displaying image information. For example, the display panel described in Embodiment 1 can be used in the display unit 5230.

[0227] The detection unit 5250 has a function to supply detection information. For example, it has a function to detect the surrounding environment in which the information processing device is being used and supply it as detection information.

[0228] Specifically, illuminance sensors, imaging devices, posture detection devices, pressure sensors, and human presence sensors can be used in the detection unit 5250.

[0229] The communication unit 5290 has functions for receiving and supplying communication information. For example, it has functions for connecting with other electronic devices or communication networks via wireless or wired communication. Specifically, it has functions such as wireless local area communication, telephone communication, and short-range wireless communication.

[0230] 《Example of Information Processing Device Configuration 1.》 For example, the outer shape of the display unit 5230 can be adapted to follow the shape of a cylindrical column (see Figure 11B). It also features a function to change the display method according to the illumination of the usage environment. Furthermore, it has a function to detect the presence of a person and change the displayed content. This allows it to be installed, for example, on a building column. Alternatively, it can display advertisements or information. Or, it can be used for digital signage, etc.

[0231] 《Example of Information Processing Device Configuration 2.》 For example, it has a function to generate image information based on the trajectory of the pointer used by the user (see Figure 11C). Specifically, a display panel with a diagonal length of 20 inches or more, preferably 40 inches or more, and more preferably 55 inches or more can be used. Alternatively, multiple display panels can be arranged to form a single display area. Alternatively, multiple display panels can be arranged to form a multi-screen. This allows it to be used, for example, in electronic whiteboards, electronic bulletin boards, electronic signboards, etc.

[0232] 《Example of Information Processing Device Configuration 3.》 The smartwatch can receive information from other devices and display it on the display unit 5230 (see Figure 11D). Alternatively, it can display several options. Alternatively, the user can select several options and send them back to the source of the information. Alternatively, it can have a function to change the display method according to the illumination of the usage environment, for example. This can reduce the power consumption of the smartwatch, for example. Alternatively, it can display images on the smartwatch so that it can be used suitably even in environments with strong ambient light, such as outdoors on a sunny day.

[0233] 《Example of Information Processing Device Configuration 4.》 The display unit 5230 has, for example, a curved surface that gently curves along the side of the housing (see Figure 11E). Alternatively, the display unit 5230 has a display panel, which has the function of displaying on, for example, the front, side, top, and back. This allows information to be displayed not only on the front of the mobile phone, but also on the sides, top, and back.

[0234] 《Example of Information Processing Device Configuration 5.》 For example, information can be received from the internet and displayed on the display unit 5230 (see Figure 12A). Alternatively, a created message can be viewed on the display unit 5230. Alternatively, a created message can be sent to another device. Alternatively, for example, the display method can be changed according to the illumination of the usage environment. This can reduce the power consumption of the smartphone. Alternatively, for example, images can be displayed on the smartphone so that it can be used suitably even in environments with strong ambient light, such as outdoors on a sunny day.

[0235] 《Example of Information Processing Device Configuration 6.》 A remote controller can be used with the input unit 5240 (see Figure 12B). Alternatively, information can be received from a broadcasting station or the internet and displayed on the display unit 5230. Alternatively, the user can be photographed using the detection unit 5250. Alternatively, the user's video can be transmitted. Alternatively, the user's viewing history can be acquired and provided to a cloud service. Alternatively, recommendation information can be acquired from a cloud service and displayed on the display unit 5230. Alternatively, a program or video can be displayed based on the recommendation information. Alternatively, for example, a function can be provided to change the display method according to the illumination of the usage environment. This allows the video to be displayed on the television system in a way that is suitable for use even when strong sunlight shines into the room on a sunny day.

[0236] 《Example of Information Processing Device Configuration 7.》 For example, educational materials can be received from the internet and displayed on the display unit 5230 (see Figure 12C). Alternatively, reports can be entered using the input unit 5240 and sent to the internet. Alternatively, correction results or evaluations of reports can be obtained from a cloud service and displayed on the display unit 5230. Alternatively, appropriate educational materials can be selected and displayed based on the evaluation.

[0237] For example, the display unit 5230 can receive image signals from other information processing devices and display them. Alternatively, it can be propped up on a stand or the like and used as a sub-display. This allows images to be displayed on the tablet computer in a way that is suitable for use even in environments with strong ambient light, such as outdoors on a sunny day.

[0238] 《Example of Information Processing Device Configuration 8.》 The information processing device includes, for example, multiple display units 5230 (see Figure 12D). For example, it can display images on the display units 5230 while capturing them with the detection unit 5250. Alternatively, it can display captured images on the detection unit. Alternatively, it can use the input unit 5240 to add embellishments to captured images. Alternatively, it can attach messages to captured images. Alternatively, it can transmit images to the internet. Alternatively, it has a function to change the shooting conditions according to the illumination of the usage environment. This allows the subject to be displayed on the digital camera in a way that allows for suitable viewing even in environments with strong ambient light, such as outdoors on a sunny day.

[0239] 《Example of Information Processing Device Configuration 9.》 For example, another information processing device can be used as a slave, and the information processing device of this embodiment can be used as a master to control the other information processing device (see Figure 12E). Alternatively, for example, a portion of the image information can be displayed on the display unit 5230, and another portion of the image information can be displayed on the display unit of the other information processing device. An image signal can be supplied. Alternatively, information to be written can be obtained from the input unit of the other information processing device using the communication unit 5290. This allows for the use of a wide display area, for example, by using a portable personal computer.

[0240] 《Example of Information Processing Device Configuration 10.》 The information processing device includes, for example, a detection unit 5250 that detects acceleration or orientation (see Figure 13A). Alternatively, the detection unit 5250 can supply information relating to the user's position or the direction the user is facing. Alternatively, the information processing device can generate image information for the right eye and image information for the left eye based on the user's position or the direction the user is facing. Alternatively, the display unit 5230 includes a display area for the right eye and a display area for the left eye. This allows, for example, the display of an immersive virtual reality space on a goggle-type information processing device.

[0241] 《Example of Information Processing Device Configuration 11.》 The information processing device includes, for example, an imaging device and a detection unit 5250 that detects acceleration or orientation (see Figure 13B). Alternatively, the detection unit 5250 can supply information relating to the user's position or the direction the user is facing. Alternatively, the information processing device can generate image information based on the user's position or the direction the user is facing. This allows, for example, information to be attached to and displayed on a real-world landscape. Alternatively, images of an augmented reality space can be displayed on a glasses-type information processing device.

[0242] This embodiment can be appropriately combined with other embodiments shown in this specification. [Explanation of symbols]

[0243] 760: First substrate, 762: First electrode, 763: Insulator, 764: Opening, 770: Nozzle, 771: Droplet, 772: Material layer, 773a: Material layer, 773b: Material layer, 773: Material layer, 779a: Mask layer, 779b: Mask layer, 780: Nozzle, 781: Droplet, 782: Material layer, 783a: Material layer, 783b: Material layer, 783: Material layer, 789a: Mask layer, 789b: Mask layer, 790: Nozzle, 791: Droplet, 792: Material layer, 793a: Material layer, 793b: Material layer, 793: Material layer, 799a: Mask layer, 799b: Mask layer

Claims

1. A first material layer containing the organic compound of the first light-emitting element is formed on the substrate by a wet process. A first resist mask is selectively formed on the first material layer. The first material layer is processed using the first resist mask to form a second material layer. A third material layer containing the organic compound of the second light-emitting element is formed on the substrate and the first resist mask. A second resist mask is selectively formed on the third material layer. The third material layer is processed using the second resist mask to form a fourth material layer. A method for manufacturing a display panel, comprising removing the first resist mask and the second resist mask.

2. A first material layer containing a hole transporting material for a first light-emitting element and a second light-emitting element is formed on a substrate by a wet process. A second material layer containing the light-emitting material of the first light-emitting element is formed on the first material layer by a wet method. A first resist mask is selectively formed on the second material layer. The second material layer is processed using the first resist mask to form the light-emitting layer of the first light-emitting element. A third material layer containing the light-emitting material of the second light-emitting element is formed on the substrate and the first resist mask. A second resist mask is selectively formed on the third material layer. The third material layer is processed using the second resist mask to form the light-emitting layer of the second light-emitting element. Remove the first resist mask and the second resist mask. A method for manufacturing a display panel, comprising forming a conductive layer on the light-emitting layer of the first light-emitting element and the light-emitting layer of the second light-emitting element.

3. A first material layer containing the light-emitting material of the first light-emitting element is formed on the substrate by a wet process. A first resist mask is selectively formed on the first material layer. The first material layer is processed using the first resist mask to form the light-emitting layer of the first light-emitting element. A second material layer containing the light-emitting material of the second light-emitting element is formed on the substrate and the first resist mask. A second resist mask is selectively formed on the second material layer. The second material layer is processed using the second resist mask to form the light-emitting layer of the second light-emitting element. A method for manufacturing a display panel, comprising removing the first resist mask and the second resist mask.

4. In any one of claims 1 to 3, The aforementioned wet method is a spin coating method, a method for manufacturing a display panel.

5. In any one of claims 1 to 4, A method for manufacturing a display panel, comprising forming a mask layer beneath the first resist mask and the second resist mask.

Images