Evaporation mask and method for manufacturing organic electronic devices

The deposition mask with tapered openings and protrusions addresses aperture blocking and film peeling issues, enabling higher-resolution and higher-quality organic electronic devices by enhancing deposition stability.

JP7888291B2Active Publication Date: 2026-07-13CANON KK
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Patent Information

Application Number
JP2022015103
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2021-05-31
Filing Date
2022-02-02
Publication Date
2026-07-13
Estimated Expiration
2042-02-02

AI Technical Summary

Technical Problem

Conventional deposition masks face issues with blocked apertures and film peeling, leading to pixel defects in high-resolution organic electronic devices due to the accumulation and peeling of deposited films on the inner walls, which affects the precision and quality of the deposition process.

Method used

A deposition mask made of a semiconductor substrate with openings featuring a tapered shape and inner walls with protrusions or uneven surfaces to enhance adhesion and prevent film peeling, ensuring stable deposition.

Benefits of technology

The solution enables higher-resolution and higher-quality deposition patterns, reducing pixel defects and improving the yield of high-resolution organic electronic devices.

✦ Generated by Eureka AI based on patent content.

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Patent Text Reader

Abstract

To provide a vapor deposition mask capable of forming a vapor deposition pattern having definition higher than before with high quality.SOLUTION: A vapor deposition mask consisting of a semiconductor substrate has a plurality of openings for passing vapor deposition particles. A diaphragm portion having the smallest opening width is provided between an end part of the opening on the side of a vapor deposition source and an end part on the side of a substrate to be vapor-deposited; an opening width on the side of the substrate to be vapor-deposited is larger than the diaphragm portion; and at least a part of each inner wall of the plurality of openings is uneven.SELECTED DRAWING: Figure 2
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Citation Information

Patent Citations

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