Gap filling treatment using pulsed high-frequency radio frequency (HFRF) plasma

Pulsed HFRF plasma-based gap filling addresses the challenge of filling high-aspect-ratio trenches by depositing a non-conformal film and etching it to ensure a thicker bottom, achieving seamless silicon films that enhance semiconductor manufacturing quality.

JP7888580B2Active Publication Date: 2026-07-13APPLIED MATERIALS INC
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Patent Information

Application Number
JP2023544491
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2021-01-25
Filing Date
2022-01-25
Publication Date
2026-07-13
Estimated Expiration
2042-01-25

AI Technical Summary

Technical Problem

Conventional methods struggle to fill narrow trenches with high aspect ratios in semiconductor manufacturing, leading to seam formation and voids due to insufficient plasma penetration and uneven deposition rates, which can cause structural damage.

Method used

A method involving pulsed high-frequency radio frequency (HFRF) plasma is used for gap filling, where a non-conformal film is deposited and then etched to ensure a thicker film at the trench bottom than the sidewalls, utilizing periodic deposition-etching processes to achieve seamless silicon gap-filling in high-aspect-ratio structures.

Benefits of technology

This approach results in seamless, high-quality amorphous silicon films that fill small-dimensional trenches without seams or voids, enhancing the structural integrity and operational reliability of semiconductor devices.

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Patent Text Reader

Abstract

A method for gap filling of a substrate surface is described. Each of the features extends a distance from the substrate surface into the substrate and has a bottom and at least one sidewall. The method includes depositing a non-conformal film within the features of the substrate surface using a plurality of high frequency differential frequency (HFRF) pulses. The non-conformal film has a greater thickness at the bottom of the feature than at least one sidewall. The deposited film is subsequently etched from the sidewall of the feature. The deposition and etching processes are repeated to fill the features.
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Citation Information

Patent Citations

  • Bottom-up growth of silicon oxide and silicon nitride using sequential deposition-etch-treat methods

    JP2019024080A

  • Method for improving process control and film conformality of pecvd film

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  • Carbon deposition-ETCH-ash gap fill process

    US20140094035A1

  • Method of forming topology-controlled amorphous carbon polymer film

    US20210020431A1