Adhesive compositions for semiconductor packaging

Abstract

The present invention relates to an adhesive composition for semiconductor packages that has a relatively high storage modulus after curing under specified conditions, an adhesive film for semiconductors, a dicing die bonding film, a semiconductor device, and a method for producing a semiconductor device.

Description

[Technical Field]

[0001] [Cross-reference of related applications] This application claims priority rights under Republic of Korea Patent Application No. 10-2023-0094412 dated July 20, 2023, and Republic of Korea Patent Application No. 10-2024-0095090 dated July 18, 2024, and all content disclosed in the literature of said Republic of Korea Patent Application is incorporated herein by reference.

[0002] The present invention relates to an adhesive composition for semiconductor packaging, an adhesive film for semiconductors, a semiconductor device, and a method for manufacturing a semiconductor device. [Background technology]

[0003] The need for higher density and integration in semiconductor packages is increasing. As a result, the size of semiconductor chips is gradually increasing, and stack packaging methods, which involve stacking semiconductor chips in multiple layers, are being widely applied to improve integration density.

[0004] The trend towards smaller semiconductor package sizes and increased capacity is driving demand for die applications that utilize thinner semiconductor chips. However, the thinness of semiconductor chips can lead to cracks, warping, or tilting (deflection) during the packaging process. This not only makes it difficult to proceed with the continuous manufacturing process for semiconductor packages but can also reduce the reliability of the final product. [Overview of the project] [Problems that the invention aims to solve]

[0005] The present invention provides an adhesive composition for semiconductor packaging that can prevent cracks and warping from occurring in semiconductor chips even during the packaging process when using thin semiconductor chips, and that has excellent adhesive strength and embedding properties.

[0006] Furthermore, the present invention provides a semiconductor adhesive film containing the above-mentioned adhesive composition for semiconductor packaging.

[0007] Furthermore, the present invention provides a dicing die bonding film including the above-mentioned adhesive film for semiconductors.

[0008] Furthermore, the present invention provides a method for manufacturing a semiconductor device that can prevent cracks and warping from occurring in semiconductor chips even during the packaging process when using thin semiconductor chips, and can achieve excellent adhesion and embedding between a substrate and a semiconductor chip or between two or more semiconductor chips. [Means for solving the problem]

[0009] In this specification, the material comprises a thermoplastic resin, a thermosetting resin, and a curing agent, and is used at a temperature of 120°C to 300°C and a curing agent of 0.5 kgf / cm². 2 ~10 kgf / cm² 2 An adhesive composition for semiconductor packaging is provided, which has a storage modulus of 30 MPa or higher at 130°C after curing under the specified pressure conditions.

[0010] This specification provides a semiconductor adhesive film containing the above-mentioned adhesive composition for semiconductor packaging.

[0011] This specification provides a dicing die bonding film including the above-mentioned adhesive film for semiconductors.

[0012] Furthermore, this specification provides a semiconductor device comprising a substrate, one or more semiconductor chips formed on the substrate, and an adhesive layer located between the substrate and the semiconductor chips formed on the substrate or between two or more semiconductor chips of the semiconductor chip, wherein the adhesive layer includes a cured product of the semiconductor package adhesive composition.

[0013] The following describes in more detail an adhesive composition for semiconductor packaging, a semiconductor device, and a method for manufacturing a semiconductor device according to specific embodiments of the present invention.

[0014] Unless otherwise expressly indicated herein, the technical terms are for referring to specific embodiments only and are not intended to limit the present invention.

[0015] As used herein, the singular forms also include the plural forms unless the context clearly indicates the contrary meaning.

[0016] As used herein, "comprising" does not exclude the presence or addition of other specific features, regions, integers, steps, operations, elements, components, and / or groups.

[0017] In this specification, (meth)acrylate includes all acrylates and methacrylates.

[0018] According to an embodiment of the present invention, there is provided an adhesive composition for a semiconductor package, which contains a thermoplastic resin, a thermosetting resin, and a curing agent, and has a storage modulus at 130°C measured after curing under temperature conditions of 120°C to 300°C and pressure conditions of 0.5 kgf / cm 2 ~10 kgf / cm 2 of 30 MPa or more.

[0019] The inventors of the present invention have confirmed that when using an adhesive composition for a semiconductor package having a storage modulus at 130°C measured after curing under predetermined conditions of 30 MPa or more, it is possible to prevent cracks and warping from occurring in the semiconductor chip even in the package process applying a thin semiconductor chip, and it can have excellent adhesive strength and embedding properties, and thus completed the invention.

[0020] [[ID=3`1]]The adhesive composition for a semiconductor package is cured at a temperature of 120°C to 300°C and a pressure of 0.5 kgf / cm 2 ~10 kgf / cm 2The storage modulus at 130°C measured after curing under the pressure conditions may be 30 MPa or more, 50 MPa or more, or 50 to 500 MPa, or 60 to 400 MPa.

[0021] The step of curing the adhesive composition for semiconductor packages under the temperature conditions of 120°C to 300°C and the pressure conditions of 0.5 kgf / cm 2 ~10 kgf / cm 2 The pressure conditions of 0.5 kgf / cm 2 ~10 kgf / cm 2 or 1 kgf / cm 2 ~8 kgf / cm 2 are applicable.

[0022] The step of curing the adhesive composition for semiconductor packages under the temperature conditions of 120°C to 300°C and the pressure conditions of 0.5 kgf / cm 2 ~10 kgf / cm 2 The curing time can be changed in consideration of specific curing conditions and the like. For example, it can be carried out for 10 minutes to 200 minutes including the curing step and the steps before and after it.

[0023] More specifically, the curing under the temperature conditions of 120°C to 300°C and the pressure conditions of 0.5 kgf / cm 2 ~10 kgf / cm 2 can be carried out including the step of heating from 25°C to 125°C for 30 minutes, the step of maintaining at the temperature of 125°C for 30 minutes after the heating, and the step of cooling to 60°C after the maintenance under the pressure condition of 7 kgf / cm 2 .

[0024] Conventionally known adhesive films for semiconductor packages often had a very low storage modulus at 130°C measured after curing, for example, 10 MPa or less.

[0025] In contrast, by having a storage modulus at 130°C measured after curing within the above-mentioned range, the semiconductor packaging adhesive composition can firmly bond to a thin semiconductor chip, for example, one with a thickness of 100 μm or less or 50 μm or less, while significantly reducing the stress applied to the semiconductor chip and significantly reducing the deformation of the semiconductor chip. As a result, as described above, by using the semiconductor packaging adhesive composition of the embodiment, it is possible to prevent cracks and warping of the semiconductor chip even during the packaging process when a thin semiconductor chip is applied.

[0026] However, the aforementioned "temperature of 120°C to 300°C and 0.5 kgf / cm²" 2 ~10 kgf / cm² 2 "Curing under the pressure conditions of the above embodiment" is not intended to limit the specific applications or processes to which the semiconductor packaging adhesive composition of the above embodiment is applied, but rather is a specific condition set to define the storage modulus at 130°C that the semiconductor packaging adhesive composition of the above embodiment has after curing.

[0027] The aforementioned semiconductor packaging adhesive composition can be used to connect a substrate to a semiconductor chip having a thickness of 100 μm or less or 50 μm or less, or to connect two or more semiconductor chips having a thickness of 100 μm or less or 50 μm or less.

[0028] The semiconductor chip may have a thickness of 100 μm or less, or 50 μm or less, 40 μm or less, 30 μm or less, or 1 μm or more, 2 μm or more, 5 μm or more, or 10 μm or more.

[0029] The storage modulus at 130°C can be determined by using a Dynamic Mechanical Analysis (DMA) instrument to raise the temperature from -30°C to 280°C at a rate of 10°C per minute with a frequency of 1 Hz and a deformation amount (strain) of 0.0%, and measuring the storage modulus (G') corresponding to the temperature. This allows for the confirmation of the storage modulus at 130°C of the cured semiconductor package adhesive composition.

[0030] On the other hand, the semiconductor packaging adhesive composition does not contain an excessive amount of inorganic filler, or substantially does not contain any inorganic filler, and is suitable for temperatures of 120°C to 300°C and a load of 0.5 kgf / cm². 2 ~10 kgf / cm² 2 The storage modulus at 130°C measured after curing under these pressure conditions may be 30 MPa or higher.

[0031] When using an adhesive composition or adhesive film containing an excessive amount of inorganic filler in the packaging process for thin semiconductor chips, it can increase the stress applied to the semiconductor chip or cause deformation of the semiconductor chip's shape. Furthermore, it can increase the viscosity of the film, making embedding difficult. In contrast, the aforementioned semiconductor packaging adhesive composition uses substantially less or no inorganic filler, thereby preventing cracks and warping of the semiconductor chip even during the packaging process for thin semiconductor chips.

[0032] More specifically, the semiconductor packaging adhesive composition may contain inorganic filler in amounts of 5% by weight or less, 4.9% by weight or less, 4.8% by weight or less, 4.6% by weight or less, or 1% by weight or less, 0.1% by weight or less, or 0.01% by weight or less, and may substantially not contain inorganic filler.

[0033] The semiconductor packaging adhesive composition may not contain an inorganic filler, or it may further contain an inorganic filler in an amount of 4.9% by weight or less.

[0034] The specific type of inorganic filler is not particularly limited, and the inorganic filler may be inorganic fine particles having a particle size of 1000 μm or less.

[0035] On the other hand, the melt viscosity of the semiconductor packaging adhesive composition, measured at 110°C with a shear rate of 5 rad / s, may be 3,000 Pa·s to 50,000 Pa·s, or 4,000 Pa·s to 30,000 Pa·s, or 4,500 Pa·s to 25,000 Pa·s, or 4,000 Pa·s to 20,000 Pa·s.

[0036] The melt viscosity may be the value measured before the semiconductor packaging adhesive composition cured as described above.

[0037] The melt viscosity of the semiconductor packaging adhesive composition can be measured by known methods, for example, by manufacturing the semiconductor packaging adhesive composition in the form of an adhesive film and measuring it.

[0038] More specifically, test pieces of adhesive film obtained from the semiconductor packaging adhesive composition can be laminated to a thickness of 300 μm to 800 μm, then laminated using a roll laminator at 60°C to form a circle with a diameter of 8 mm, and the melt viscosity can then be measured using a method such as the TA Corporation ARES-G2 instrument. In this case, the melt viscosity may be the viscosity value measured at 110°C by applying a heating rate of 20°C / min at a shear rate of 5 Rad / s.

[0039] The aforementioned melt viscosity refers to the absolute degree to which a substance in a flowing state resists movement in the direction of motion.

[0040] The aforementioned adhesive composition for semiconductor packaging can pass through the die-attach process at a temperature of around 110°C during the semiconductor packaging process. By having a melt viscosity of 3,000 Pa·s to 50,000 Pa·s or 4,000 Pa·s to 30,000 Pa·s measured at 110°C, the adhesive composition can efficiently fill the space formed between the substrate and the semiconductor chip or between two or more semiconductor chips, thereby preventing the occurrence of voids or poor connection conditions.

[0041] As described above, the adhesive composition for semiconductor packaging may include a thermoplastic resin.

[0042] Examples of such thermoplastic resins include (meth)acrylate resins, polyimides, polyetherimides, polyesterimides, polyamides, polyethersulfones, polyetherketones, polyvinyl chloride, polybutadiene resins, acrylonitrile-butadiene copolymers, acrylonitrile-butadiene-styrene resins, styrene-butadiene copolymers, and phenoxy resins.

[0043] The thermoplastic resin can have a glass transition temperature of -50°C to 70°C. By using a thermoplastic resin with such a glass transition temperature, the final semiconductor adhesive film can have high adhesive strength and can be easily manufactured in the form of a thin film or the like.

[0044] On the other hand, the (meth)acrylate resin containing repeating units substituted with glycidyl or epoxy groups has the characteristic of having a high density of reactive groups and can have a glass transition temperature of -20°C to 30°C.

[0045] Here, if the epoxy group content in the (meth)acrylate resin is less than 1% by weight, the compatibility and adhesive strength with the epoxy resin will be insufficient, and if it exceeds 30% by weight, the rate of viscosity increase due to curing will be excessively fast, which may prevent sufficient embedding or bonding of the objects to be bonded.

[0046] The (meth)acrylate resin containing repeating units substituted with glycidyl or epoxy groups may have a weight-average molecular weight of 50,000 g / mol to 1,200,000 g / mol.

[0047] As an unrestrictive example, the weight-average molecular weight can be measured using an Agilent PL-GPC220 instrument equipped with a 300 mm long PolarGel MIXED-L column (Polymer Laboratories). The measurement temperature is 65°C, dimethylformamide is used as the solvent, and the flow rate is 1 mL / min. The sample is prepared to a concentration of 10 mg / 10 mL and supplied in 100 μL. The Mw and Mn values ​​are derived by referring to a calibration curve formed using polystyrene standards. Eight types of polystyrene standards with molecular weights (g / mol) of 580 / 3,940 / 8,450 / 31,400 / 70,950 / 316,500 / 956,000 / 4,230,000 are used.

[0048] The (meth)acrylate resin is an epoxy group-containing acrylic copolymer that may contain 1 to 30% by weight, 2 to 20% by weight, or 2.5 to 15% by weight of glycidyl acrylate or glycidyl methacrylate in total weight.

[0049] If the epoxy group content in the (meth)acrylate resin is less than 1% by weight, the compatibility and adhesive strength with epoxy resin may be insufficient. If it exceeds 30% by weight, the rate of viscosity increase due to curing may be excessively fast, which may prevent sufficient embedding or bonding of the objects to be bonded.

[0050] The content of the thermoplastic resin can be determined during the manufacturing of the adhesive film, taking into consideration the flowability of the composition, the physical properties of the final adhesive film, and other factors.

[0051] On the other hand, the thermoplastic resin may contain two or more (meth)acrylate resins having different glass transition temperatures.

[0052] More specifically, the thermoplastic resin may include a (meth)acrylate resin comprising repeating units substituted with glycidyl or epoxy groups and having a glass transition temperature of -20°C to 5°C; and a (meth)acrylate resin comprising repeating units substituted with glycidyl or epoxy groups and having a glass transition temperature of 7°C to 30°C.

[0053] (Meth)acrylate resins with different glass transition temperatures can each have a weight-average molecular weight ranging from 50,000 to 1,500,000.

[0054] By including a (meth)acrylate resin in the thermoplastic resin, which contains repeating units substituted with glycidyl or epoxy groups and has a glass transition temperature of -20°C to 5°C, the adhesive composition for semiconductor packaging can achieve higher workability and be more easily processed into forms such as films.

[0055] Furthermore, by including a (meth)acrylate resin in the thermoplastic resin, which contains repeating units substituted with glycidyl or epoxy groups and has a glass transition temperature of 7°C to 30°C, the semiconductor packaging adhesive composition can have a higher storage modulus (130°C) and improved wettability to wafers.

[0056] As described above, the adhesive composition for semiconductor packaging may include a thermosetting resin.

[0057] More specifically, the thermosetting resin may contain a silsesquioxane compound substituted with a glycidyl group or an epoxy group.

[0058] As a result, when using the semiconductor packaging adhesive composition containing the silsesquioxane compound substituted with the glycidyl group or epoxy group, it is possible to prevent cracks and warping of the semiconductor chip even during the packaging process when a thin semiconductor chip is applied, and it is possible to achieve excellent adhesive strength and embedding properties.

[0059] The silsesquioxane compound substituted with a glycidyl group or epoxy group may include an organic-inorganic hybrid epoxy resin having a repeating unit represented by the following chemical formula 1.

[0060] [ka]

[0061] In the above chemical formula 1, R is a monovalent functional group having one or more epoxy groups, and n is 1 to 30.

[0062] Each of the R in the above chemical formula 1 may independently be one functional group selected from the group consisting of the following structural formulas:

[0063] [ka]

[0064] In the above structural formula, [ka] The notation indicates the portion where the functional group is linked to another group.

[0065] The aforementioned organic-inorganic hybrid epoxy resin may have an average epoxy equivalent of 50 g / eq. to 300 g / eq. This average epoxy equivalent is calculated based on the weight ratio and epoxy equivalent of each epoxy resin contained in the organic-inorganic hybrid epoxy resin.

[0066] Preferably, the organic-inorganic hybrid epoxy resin can have an average epoxy equivalent of 50 g / eq. to 300 g / eq., or 100 g / eq. to 300 g / eq., or 100 g / eq. to 250 g / eq., or 150 g / eq. to 250 g / eq., or 150 g / eq. to 200 g / eq., or 160 g / eq. to 180 g / eq.

[0067] In order to allow the additive effect of the organic-inorganic hybrid epoxy resin to be realized, it is preferable that the organic-inorganic hybrid epoxy resin has an average epoxy equivalent of 50 g / eq. or more. However, an excessively high epoxy equivalent may degrade the physical properties of the adhesive composition for semiconductor packaging. Therefore, it is preferable that the organic-inorganic hybrid epoxy resin has an average epoxy equivalent of 300 g / eq. or less.

[0068] The organic-inorganic hybrid epoxy resin preferably has a viscosity of 0.1 Pa·s to 10,000 Pa·s, or 0.5 Pa·s to 5,000 Pa·s, as measured at 25°C.

[0069] If the viscosity of the organic-inorganic hybrid epoxy resin is excessively high, the physical properties of the semiconductor packaging adhesive composition and the adhesive film may deteriorate. Therefore, it is preferable that the organic-inorganic hybrid epoxy resin has a viscosity of 10,000 Pa·s or less.

[0070] The thermosetting resin may further include an epoxy resin together with a silsesquioxane compound substituted with a glycidyl group or an epoxy group.

[0071] Specific examples of such epoxy resins include bisphenol epoxy resins, biphenyl epoxy resins, naphthalene epoxy resins, fluorene epoxy resins, phenol novolac epoxy resins, cresol novolac epoxy resins, xyloc epoxy resins, trishydroxyphenylmethane epoxy resins, tetraphenylmethane epoxy resins, dicyclopentadiene type epoxy resins, dicyclopentadiene modified phenol type epoxy resins, or mixtures or copolymers of two or more of these.

[0072] More specifically, if the thermosetting resin further comprises an epoxy resin together with a silsesquioxane compound substituted with a glycidyl group or an epoxy group, the epoxy resin may be a biphenyl-based epoxy resin having a softening point of 50°C to 100°C, a cresol novolac-type epoxy resin having a softening point of 50°C to 100°C, or a bisphenol A epoxy resin having a softening point of 50°C to 100°C.

[0073] If the thermosetting resin further comprises an epoxy resin together with a silsesquioxane compound substituted with a glycidyl group or an epoxy group, it may contain 10 to 500 parts by weight of the epoxy resin per 100 parts by weight of the silsesquioxane compound substituted with a glycidyl group or an epoxy group.

[0074] On the other hand, the adhesive composition for semiconductor packaging may contain, as the curing agent, one or more compounds selected from the group consisting of amine-based curing agents, phenol-based curing agents, and acid anhydride-based curing agents.

[0075] A novolac-based phenolic resin is preferably applicable as the curing agent.

[0076] The novolac-based phenolic resin has a chemical structure in which rings are located between reactive functional groups. Due to these structural characteristics, the novolac-based phenolic resin can further reduce the hygroscopicity of the adhesive composition, thereby increasing its stability in high-temperature IR reflow processes and playing a role in preventing peeling and reflow cracking of the adhesive film.

[0077] Specific examples of the novolac-based phenolic resin include one or more selected from the group consisting of novolac phenolic resin, xyloc novolac phenolic resin, cresol novolac phenolic resin, biphenyl novolac phenolic resin, bisphenol A novolac phenolic resin, and bisphenol F novolac phenolic resin.

[0078] The novolac-based phenolic resin is preferably applicable if it has a softening point of 60°C or higher, or 60°C to 150°C, or 105°C to 150°C, or 70°C to 120°C.

[0079] Novolac-based phenolic resins having a softening point of 60°C or higher ensure that the adhesive composition has sufficient heat resistance, strength, and adhesion after curing. However, if the softening point of the novolac-based phenolic resin is excessively high, the fluidity of the adhesive composition will decrease, potentially creating voids within the adhesive during the actual semiconductor manufacturing process, which can significantly reduce the reliability and quality of the final product.

[0080] The novolac-based phenolic resin preferably has a hydroxyl group equivalent of 80 g / eq to 300 g / eq and a softening point of 60°C to 150°C.

[0081] The adhesive composition for semiconductor packaging can be appropriately adjusted in terms of the content of the thermoplastic resin, thermosetting resin, and curing agent, taking into consideration specific physical properties. For example, the adhesive composition for semiconductor packaging may contain 5 to 500 parts by weight of the thermoplastic resin and 1 to 150 parts by weight of the curing agent per 100 parts by weight of the thermosetting resin.

[0082] The adhesive composition for semiconductor packaging may further contain, as the curing catalyst, one or more compounds selected from the group consisting of phosphorus-based compounds, boron-based compounds, phosphorus-boron-based compounds, and imidazole-based compounds.

[0083] The curing catalyst plays a role in promoting the action of the curing agent and the curing of the semiconductor adhesive resin composition, and any curing catalyst known to be used in the manufacture of semiconductor adhesive films and the like can be used without significant limitations.

[0084] The content of the curing catalyst can be adjusted considering the content of the curing agent and the physical properties of the final adhesive film. For example, the curing catalyst can be used in amounts of 0.1 to 20 parts by weight, 0.5 to 15 parts by weight, 1.0 to 10 parts by weight, 1.5 to 5 parts by weight, or 1.5 to 3 parts by weight, based on 100 parts by weight of the thermosetting resin.

[0085] The aforementioned adhesive composition for semiconductor packaging may further contain an organic solvent.

[0086] The content of the organic solvent can be determined by considering the physical properties of the adhesive composition and the adhesive film containing it, as well as the productivity of the manufacturing process.

[0087] For example, the organic solvent may be present in amounts of 10 to 90 parts by weight, based on 100 parts by weight of the total sum of the thermosetting resin, thermoplastic resin, curing agent, and other additives.

[0088] The organic solvent may be one or more compounds selected from the group consisting of esters, ethers, ketones, aromatic hydrocarbons, and sulfoxides.

[0089] The ester solvents include ethyl acetate, n-butyl acetate, isobutyl acetate, amyl formate, isoamyl acetate, isobutyl acetate, butyl propionate, isopropyl butyrate, ethyl butyrate, butyl butyrate, methyl lactate, ethyl lactate, gamma-butyrolactone, epsilon-caprolactone, delta-valerolactone, alkyl oxyacetates (for example, methyl oxyacetate, ethyl oxyacetate, methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, methyl 3-hydroxypropionate, ethyl 3-hydroxypropionate, methyl 3-methoxypropionate, ethyl 3-ethyl 3-ethyl ester It may also be methyl toxypropionate, ethyl 3-ethoxypropionate, methyl 2-oxypropionate, ethyl 2-oxypropionate, methyl 2-methoxypropionate, ethyl 2-methoxypropionate, propyl 2-methoxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate, methyl 2-oxy-2-methylpropionate, methyl 2-methoxy-2-methylpropionate, ethyl 2-ethoxy-2-methylpropionate, methyl pyruvate, ethyl pyruvate, propyl pyruvate, methyl acetoacetate, ethyl acetoacetate, methyl 2-oxobutanoate, ethyl 2-oxobutanoate, etc.

[0090] The ether solvent may be diethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, etc.

[0091] The ketone solvent may be methyl ethyl ketone, cyclohexanone, cyclopentanone, 2-heptanone, 3-heptanone, N-methyl-2-pyrrolidone, or the like.

[0092] The aromatic hydrocarbon solvent may be toluene, xylene, anisole, limonene, or the like.

[0093] The sulfoxide solvent may be dimethyl sulfoxide or the like.

[0094] The aforementioned adhesive composition for semiconductor packaging may further contain a coupling agent.

[0095] The type of coupling agent is not particularly limited, but preferably, 2-(3,4-epoxycyclohexyl)-ethyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, N-2(aminoethyl)3-aminopropylmethyldimethoxysilane, N-2(aminoethyl)3-aminopropyltrimethoxysilane, N-2(aminoethyl)3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-triethoxyly-N-(1,3-dimethylbutylidene)propylamine, N-phenyl-3-aminopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane containing mercapto, 3-mercaptopropyltrimethoxysilane, and others are preferably applicable.

[0096] The phenols may also be compounds having at least two phenolic hydroxyl groups.

[0097] For example, the phenols may include catechol, resorcinol, hydroquinone, biphenol, dihydroxynaphthalene, hydroxyhydroquinone, pyrogallol, methylidenebiphenol (bisphenol F), isopropylidenebiphenol (bisphenol A), ethylidenebiphenol (bisphenol AD), 1,1,1-tris(4-hydroxyphenyl)ethane, trihydroxybenzophenone, trihydroxyacetophenone, poly-p-vinylphenol, and the like.

[0098] Compounds having at least two phenolic hydroxyl groups include one or more compounds selected from compounds having at least one phenolic hydroxyl group in their molecule; aromatic compounds having two halomethyl, alkoxymethyl, or hydroxylmethyl groups in their molecule; and polycondensates of at least one compound selected from divinylbenzene and aldehydes.

[0099] Examples of compounds having at least one phenolic hydroxyl group in their molecule include phenol, alkylphenol, naphthol, cresol, catechol, resorcinol, hydroquinone, biphenol, dihydroxynaphthalene, hydroxyhydroquinone, pyrogallol, methylidenbiphenol (bisphenol F), isopropylidenbiphenol (bisphenol A), ethylidenbiphenol (bisphenol AD), 1,1,1-tris(4-hydroxyphenyl)ethane, trihydroxybenzophenone, trihydroxyacetophenone, and poly-p-vinylphenol. Furthermore, examples of aromatic compounds having two halomethyl groups, alkoxymethyl groups, or hydroxymethyl groups in the molecule include 1,2-bis(chloromethyl)benzene, 1,3-bis(chloromethyl)benzene, 1,4-bis(chloromethyl)benzene, 1,2-bis(methoxymethyl)benzene, 1,3-bis(methoxymethyl)benzene, 1,4-bis(methoxymethyl)benzene, 1,2-bis(hydroxymethyl)benzene, 1,3-bis(hydroxymethyl)benzene, 1,4-bis(hydroxymethyl)benzene, bis(chloromethyl)biphenyl, and bis(methoxymethyl)biphenyl.

[0100] Examples of the aforementioned aldehydes include formaldehyde (formalin as an aqueous solution thereof), paraformaldehyde, trioxane, and hexamethylenetetramine.

[0101] Examples of the aforementioned polycondensates include phenol novolac resin, which is a polycondensate of phenol and formaldehyde; cresol novolac resin, which is a polycondensate of cresol and formaldehyde; naphthol novolac resin, which is a polycondensate of naphthols and formaldehyde; phenol aralkyl resin, which is a polycondensate of phenol and 1,4-bis(methoxymethyl)benzene; a polycondensate of bisphenol A and formaldehyde; a polycondensate of phenol and divinylbenzene; and a polycondensate of cresol, naphthol, and formaldehyde. Furthermore, these polycondensates may be rubber-modified or may have an aminotriazine skeleton or a dicyclopentadiene skeleton introduced into their molecular framework.

[0102] Furthermore, examples include compounds having a phenolic hydroxyl group that have been liquefied by allylation, such as allylated phenol novolac resin, diallylbisphenol A, diallylbisphenol F, and diallylbiphenol.

[0103] The aforementioned alcohols may be compounds having at least two alcoholic hydroxyl groups in their molecule.

[0104] For example, the alcohols include 1,3-dioxane-5,5-dimethanol, 1,5-pentanediol, 2,5-frangimethanol, diethylene glycol, tetraethylene glycol, pentaethylene glycol, hexaethylene glycol, 1,2,3-hexanetriol, 1,2,4-butanetriol, 1,2,6-hexanetriol, 3-methylpentane-1,3,5-triol, glycerin, trimethylolethane, trimethylolpropane, erythritol, pentaerythritol, ribitol, sorbitol, 2,4-diethyl-1,5-pentanediol, and propylene It may also be glycol monomethyl ether, propylene glycol monoethyl ether, 1,3-butylene glycol, 2-ethyl-1,3-hexanediol, N-butyldiethanolamine, N-ethyldiethanolamine, diethanolamine, triethanolamine, N,N-bis(2-hydroxyethyl)isopropanolamine, bis(2-hydroxymethyl)iminotris(hydroxymethyl)methane, N,N,N',N'-tetrakis(2-hydroxyethyl)ethylenediamine, 1,1',1'',1'''-(ethylenedinitrilo)tetrakis(2-propanol), etc.

[0105] On the other hand, according to yet another embodiment of the present invention, a semiconductor adhesive film containing the semiconductor packaging adhesive composition of the above embodiment can be provided.

[0106] The aforementioned adhesive composition for semiconductor packaging may also be in the form of an adhesive film.

[0107] The adhesive film may include an adhesive layer formed by drying or curing the semiconductor packaging adhesive composition.

[0108] The semiconductor adhesive film can have a thickness of 1 μm to 300 μm. The thickness can refer to the thickness of a single layer or one layer of the semiconductor adhesive film. The semiconductor adhesive film can also have a thickness of 1 μm or more, 3 μm or more, 5 μm or more, or 10 μm or more. The semiconductor adhesive film can also have a thickness of 300 μm or less, 100 μm or less, 90 μm or less, or 70 μm or less. When the thickness of the semiconductor adhesive film increases or decreases by a specific value, the physical properties measured on the semiconductor adhesive film can also change by a certain value.

[0109] Furthermore, the semiconductor adhesive film may be in the form of a multilayer film in which a single film having a thickness of 1 μm to 300 μm forms multiple layers.

[0110] The adhesive film can be used as a die attach film (DAF) to bond a lead frame or substrate to a die, or to bond dies to dies. This allows the adhesive film to be processed into forms such as a die bonding film or a dicing die bonding film.

[0111] The adhesive film may have a configuration in which a support substrate and an adhesive layer are laminated in order.

[0112] The adhesive film may have a configuration in which a support substrate, an adhesive layer, and a protective film are laminated in that order.

[0113] The adhesive film may have a configuration in which a support substrate, an adhesive layer, another adhesive layer, and a protective film are laminated in that order.

[0114] As the support substrate, a resin film with excellent heat resistance and chemical resistance; a crosslinked film obtained by crosslinking the resin constituting the resin film; or a film obtained by coating the surface of the resin film with silicone resin or the like and then performing a peeling treatment can be used.

[0115] The resins that make up the aforementioned resin film can include polyolefins such as polyester, polyethylene, polypropylene, polybutene, and polybutadiene, vinyl chloride, ethylene-methacrylic acid copolymer, ethylene vinyl acetate copolymer, polyester, polyimide, polyethylene terephthalate, polyamide, and polyurethane.

[0116] The thickness of the support substrate is not particularly limited, but may be 3 to 400 μm, 5 to 200 μm, or 10 to 150 μm.

[0117] The adhesive layer may include the semiconductor packaging adhesive composition described above. The details regarding the semiconductor packaging adhesive composition are as described above.

[0118] The type of protective film is not particularly limited, and any plastic film known in this art can be applied. For example, the protective film may be a plastic film containing resins such as low-density polyethylene, linear polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymers of polypropylene, block copolymers of polypropylene, homopolypropylene, polymethylpentene, ethylene-vinyl acetate copolymer, ethylene-methacrylic acid copolymer, ethylene-methyl methacrylate copolymer, ethylene-ionomer copolymer, ethylene-vinyl alcohol copolymer, polybutene, or styrene copolymer.

[0119] According to yet another embodiment of the present invention, a dicing die bonding film can be provided, comprising a base film, an adhesive layer formed on the base film, and an adhesive layer formed on the adhesive layer, which includes the semiconductor adhesive film of the other embodiment.

[0120] The specific details regarding the semiconductor adhesive film are as described above in the other embodiments.

[0121] The type of base film included in the dicing die bonding film is not particularly limited, and for example, plastic films or metal foils known in this field can be used. For example, the base film can be low-density polyethylene, linear polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymers of polypropylene, block copolymers of polypropylene, homopolypropylene, polymethylpentene, ethylene-vinyl acetate copolymer, ethylene-methacrylic acid copolymer, ethylene-methyl methacrylate copolymer, ethylene-ionomer copolymer, ethylene-vinyl alcohol copolymer, polybutene, styrene copolymer, or a mixture of two or more of these. The meaning of a base film containing a mixture of two or more polymers includes all films with a structure in which two or more films containing each of the above polymers are laminated, or single-layer films containing two or more of the above polymers.

[0122] The thickness of the base film is not particularly limited, and is usually formed to a thickness of 10 μm to 200 μm, preferably 50 μm to 180 μm. If the thickness is less than 10 μm, there is a risk of difficulty in adjusting the cut depth during the dicing process, and if it exceeds 200 μm, there is a risk of a large amount of burr being generated during the dicing process or a decrease in the stretching rate, which may prevent the expanding process from being performed accurately.

[0123] The substrate film may be subjected to conventional physical or chemical treatments, such as matting, corona discharge treatment, primer treatment, or crosslinking treatment, as needed.

[0124] On the other hand, the adhesive layer may include an ultraviolet-curing adhesive or a thermosetting adhesive. When using an ultraviolet-curing adhesive, ultraviolet light is irradiated from the substrate film side to increase the cohesive force and glass transition temperature of the adhesive and reduce its adhesive strength. In the case of a thermosetting adhesive, heat is applied to reduce its adhesive strength.

[0125] At the same time, the UV-curable adhesive may include a (meth)acrylate resin, a UV-curable compound, a photoinitiator, and a crosslinking agent.

[0126] The (meth)acrylate resin may have a weight-average molecular weight of 100,000 g / mol to 1,500,000 g / mol, preferably 200,000 g / mol to 1,000,000 g / mol. If the weight-average molecular weight is less than 100,000 g / mol, the coating properties or cohesive force may decrease, potentially leaving residue on the adherend during peeling or causing adhesive breakdown. If the weight-average molecular weight exceeds 1,500,000 g / mol, the base resin may interfere with the reaction of the UV-curable compound, potentially preventing an efficient reduction in peeling force.

[0127] Such (meth)acrylate resins can be, for example, copolymers of (meth)acrylic acid ester monomers and monomers containing crosslinkable functional groups. Examples of (meth)acrylic acid ester monomers include alkyl (meth)acrylates, and more specifically, monomers having alkyl groups with 1 to 12 carbon atoms, such as pentyl (meth)acrylate, n-butyl (meth)acrylate, ethyl (meth)acrylate, methyl (meth)acrylate, hexyl (meth)acrylate, n-octyl (meth)acrylate, isooctyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, dodecyl (meth)acrylate, or decyl (meth)acrylate, one or more of these. The larger the number of carbon atoms in the alkyl monomer, the lower the glass transition temperature of the final copolymer, so an appropriate monomer should be selected according to the desired glass transition temperature.

[0128] Examples of crosslinkable functional group-containing monomers include one or more hydroxyl group-containing monomers, carboxyl group-containing monomers, or nitrogen-containing monomers. Examples of hydroxyl group-containing compounds include 2-hydroxyethyl (meth)acrylate or 2-hydroxypropyl (meth)acrylate, examples of carboxyl group-containing compounds include (meth)acrylic acid, and examples of nitrogen-containing monomers include (meth)acrylonitrile, N-vinylpyrrolidone, or N-vinylcaprolactam, but are not limited to these.

[0129] The (meth)acrylate resin may further include vinyl acetate, styrene, or acrylonitrile carbon-carbon double bond-containing low molecular weight compounds, etc., from the viewpoint of improving compatibility and other functionalities.

[0130] Furthermore, the type of UV-curable compound is not particularly limited, and for example, polyfunctional compounds with a weight-average molecular weight of 100 g / mol to 300,000 g / mol, or 500 g / mol to 100,000 g / mol (e.g., polyfunctional urethane acrylates, polyfunctional acrylate monomers, or oligomers) can be used. An average technician in this field can easily select an appropriate compound according to the intended application.

[0131] The amount of the UV-curable compound can be 5 to 400 parts by weight, preferably 10 to 200 parts by weight, per 100 parts by weight of the base resin described above. If the amount of the UV-curable compound is less than 5 parts by weight, the decrease in adhesive strength after curing may not be sufficient, potentially leading to a decrease in pickability. If it exceeds 400 parts by weight, the cohesive force of the adhesive before UV irradiation may be insufficient, or peeling from the release film may not be easy.

[0132] The type of photoinitiator is not particularly limited, and any common initiator known in this field can be used. Its content may be 0.05 to 20 parts by weight per 100 parts by weight of the UV-curable compound. If the photoinitiator content is less than 0.05 parts by weight, the curing reaction by UV irradiation may be insufficient, potentially reducing the pickability. If it exceeds 20 parts by weight, crosslinking reactions may occur in short units during the curing process, unreacted UV-curable compound may be generated, causing residue on the substrate surface, or the peeling force may be excessively reduced after curing, potentially reducing the pickability.

[0133] Furthermore, the type of crosslinking agent included in the adhesive portion to impart adhesive strength and cohesive strength is not particularly limited, and ordinary compounds such as isocyanate compounds, aziridine compounds, epoxy compounds, or metal chelate compounds can be used. The crosslinking agent can be included in an amount of 2 to 40 parts by weight, preferably 2 to 20 parts by weight, per 100 parts by weight of the base resin. If the content is less than 2 parts by weight, the cohesive strength of the adhesive may be insufficient, and if it exceeds 20 parts by weight, the adhesive strength before UV irradiation may be insufficient, potentially causing chip scattering.

[0134] The adhesive layer may further contain tackifiers such as rosin resin, terpene resin, phenol resin, styrene resin, aliphatic petroleum resin, aromatic petroleum resin, or aliphatic aromatic copolymer petroleum resin.

[0135] The thickness of the adhesive layer is not particularly limited, but it may be in the range of, for example, 1 μm to 500 μm.

[0136] On the other hand, as described above, the adhesive layer is formed on the adhesive layer and may include the semiconductor adhesive film of the embodiment described above. The details relating to the semiconductor adhesive film include all of the matters described above in the other embodiment.

[0137] The method for manufacturing the dicing die bonding film described above is not particularly limited. For example, a method in which an adhesive portion, a bonding portion, and a release film are sequentially formed on a base film, or a method in which a dicing film (base film + adhesive portion) and a die bonding film or a release film with the bonding portion formed on it are manufactured separately and then laminated together.

[0138] On the other hand, according to another embodiment of the present invention, a semiconductor wafer dicing method can be provided, which includes a pre-treatment step of completely dicing or partially processing a semiconductor wafer, including the dicing die bonding film of the other embodiment and a wafer laminated on at least one surface of the dicing die bonding film, to make it divisible; and a step of irradiating the substrate film of the pre-treated semiconductor wafer with ultraviolet light to pick up individual chips and the like separated by the dicing of the semiconductor wafer.

[0139] The details relating to the dicing die bonding film include all of the details described above in the other embodiments.

[0140] Except for details relating to the specific steps of the dicing method, any apparatus, methods, etc. commonly used for dicing semiconductor wafers can be used without any particular limitations.

[0141] The semiconductor wafer dicing method may further include a step of expanding the semiconductor wafer after the pretreatment step. In this case, a subsequent step is taken in which ultraviolet light is irradiated onto the substrate film of the expanded semiconductor wafer, and individual chips separated by the dicing of the semiconductor wafer are picked up.

[0142] By using a dicing die bonding film including the aforementioned dicing film, the burr phenomenon that can occur during the dicing process of a semiconductor wafer can be minimized, preventing contamination of the semiconductor chip and improving the reliability and lifespan of the semiconductor chip.

[0143] On the other hand, according to another embodiment of the present invention, a semiconductor device can be provided that includes a substrate, one or more semiconductor chips formed on the substrate, and an adhesive layer located between the substrate and the semiconductor chips formed on the substrate or between two or more semiconductor chips of the semiconductor chip.

[0144] In this case, the adhesive layer may include a cured product of the semiconductor packaging adhesive composition of the above embodiment.

[0145] The semiconductor chip may have a thickness of 100 μm or less, or 50 μm or less, 40 μm or less, 30 μm or less, or 1 μm or more, 2 μm or more, 5 μm or more, or 10 μm or more.

[0146] The curing conditions for obtaining the cured product of the aforementioned semiconductor packaging adhesive composition are not significantly limited; for example, a temperature of 120°C to 300°C and a curing rate of 0.5 kgf / cm² are used. 2 ~10 kgf / cm² 2 The curing process can also be carried out under the following pressure conditions. However, as stated above, the curing conditions do not limit the specific applications or usage forms of the semiconductor packaging adhesive composition.

[0147] The storage modulus of the adhesive layer measured at 130°C after curing may be 30 MPa or more, or 50 to 500 MPa, or 60 to 400 MPa.

[0148] More specific details regarding the adhesive layer include the above-mentioned details regarding the adhesive composition for semiconductor packaging of the above embodiment.

[0149] The semiconductor device of the above embodiment can have high reliability and internal structural stability, even while including a thin semiconductor chip.

[0150] The melt viscosity measured at 110°C by applying a shear rate of 5 rad / s to the aforementioned adhesive composition for semiconductor packaging may be 3,000 Pa·s to 50,000 Pa·s, or 4,000 Pa·s to 30,000 Pa·s, or 4,500 Pa·s to 25,000 Pa·s, or 4,000 Pa·s to 20,000 Pa·s.

[0151] The semiconductor packaging adhesive composition of the above embodiment has the above-mentioned melt viscosity at 110°C and can efficiently fill the space formed between the substrate and the semiconductor chip or between two or more semiconductor chips, thereby preventing void formation and poor connection conditions.

[0152] The storage modulus of the adhesive layer at 130°C is 30 MPa, which allows for a strong bond with the thin semiconductor chip while significantly reducing the stress applied to the semiconductor chip and greatly reducing its deformation. This prevents cracks and warping from occurring in the semiconductor chip even during the packaging process when using thin semiconductor chips.

[0153] On the other hand, according to yet another embodiment of the invention, an adhesive layer is formed between a substrate and a semiconductor chip formed on the substrate or between two or more semiconductor chips, and the adhesive layer is heated at a temperature of 120°C to 300°C and 0.5 kgf / cm². 2 ~10 kgf / cm² 2 A method for manufacturing a semiconductor device can be provided, which includes a step of curing under certain pressure conditions.

[0154] In this case, the adhesive layer may include a cured product of the semiconductor packaging adhesive composition of the above embodiment.

[0155] However, as stated above, the curing conditions do not limit the specific applications or usage forms of the semiconductor packaging adhesive composition.

[0156] The semiconductor chip may have a thickness of 100 μm or less, or 50 μm or less, 40 μm or less, 30 μm or less, or 1 μm or more, 2 μm or more, 5 μm or more, or 10 μm or more.

[0157] More specific details regarding the adhesive layer include the above-mentioned details regarding the adhesive composition for semiconductor packaging of the above embodiment.

[0158] In the method for manufacturing the semiconductor device, a conventional semiconductor packaging method can be used, except for the details described above. [Effects of the Invention]

[0159] According to the present invention, it is possible to prevent cracks and warping from occurring in semiconductor chips even during the packaging process when using thin semiconductor chips, and to provide an adhesive composition for semiconductor packaging that has excellent adhesive strength and embedding properties, an adhesive film for semiconductor packaging containing the adhesive composition for semiconductor packaging, and a dicing die bonding film for semiconductor packaging containing the adhesive film for semiconductor packaging.

[0160] Furthermore, according to the present invention, it is possible to provide a semiconductor device that has high reliability and internal structural stability despite including a thin semiconductor chip, and a method for manufacturing a semiconductor device that can prevent cracks and warping from occurring in the semiconductor chip even during the packaging process in which the thin semiconductor chip is applied, and can achieve excellent adhesion and embedding between the substrate and the semiconductor chip or between two or more semiconductor chips. [Brief explanation of the drawing]

[0161] [Figure 1] This figure schematically shows a semiconductor device with an overhang structure used in the die-deflection evaluation in the test example. [Modes for carrying out the invention]

[0162] The following are preferred embodiments for understanding the invention. However, the following embodiments are merely illustrative of the present invention and do not limit it to these embodiments.

[0163] [Manufacturing example: Manufacturing of thermoplastic acrylate resin] Manufacturing Example 1 (Manufacturing of thermoplastic acrylate resins) To synthesize an acrylate-based resin (weight-average molecular weight 1,000,000 g / mol, glass transition temperature 15°C) in which glycidyl groups were introduced as branched chains, by mixing 100 g of toluene with 40 g of butyl acrylate, 30 g of ethyl acrylate, 30 g of acrylonitrile, 5 g of methyl methacrylate, and 5 g of glycidyl methacrylate, and reacting at 80°C for approximately 12 hours.

[0164] Manufacturing Example 2 (Manufacturing of thermoplastic acrylate resins) 100 g of toluene was mixed with 70 g of butyl acrylate, 25 g of acrylonitrile, 5 g of methyl methacrylate, and 10 g of glycidyl methacrylate. The mixture was reacted at 80°C for approximately 12 hours to synthesize an acrylate-based resin (weight-average molecular weight 600,000 g / mol, glass transition temperature -5°C) in which glycidyl groups were introduced as branched chains.

[0165] [Example: Manufacturing of adhesive composition for semiconductor packaging] Examples 1-6 (1) Manufacturing of adhesive compositions for semiconductor packaging The components and their quantities shown in Table 1 below were mixed with methyl ethyl ketone to obtain an adhesive composition for semiconductor packaging (solid content 20% by weight).

[0166] (2) Manufacturing of adhesive film The adhesive composition was applied to a release-treated polyethylene terephthalate film (38 μm thick) using a comma coater, and then dried at 110°C for 3 minutes to obtain an adhesive film with an adhesive layer approximately 20 μm thick.

[0167] (3) Measurement of the melt viscosity of the adhesive film The adhesive film obtained above was laminated using a roll laminator at 60°C to a thickness of 640 μm, and then formed into a circle with a diameter of 8 mm. The melt viscosity of the adhesive film was then measured using a TA Corporation ARES-G2 instrument. At this time, the melt viscosity was taken as the viscosity value measured at 110°C by applying a heating rate of 20°C / min at a shear rate of 5 Rad / s.

[0168] (4) Measurement of the storage modulus of the adhesive film at 130°C The aforementioned adhesive film was laminated using a roll laminator at 60°C to create a layer with a thickness of 640 μm, and a sample was manufactured.

[0169] The prepared sample was placed in a pressure oven (CMT Corporation, Pressure Cure Oven PCO) and subjected to a pressure of 7 kgf / cm². 2 Under the specified pressure conditions, the temperature was increased from 25°C to 125°C for 30 minutes, maintained at 125°C for 30 minutes after the temperature increase, and then cooled to 60°C to cure.

[0170] Then, the sample that underwent the curing process was molded into a square with a length of 17.5 mm and a width of 5.3 mm to be used as a measurement sample. Using a DMA (Dynamic Mechanical Analysis, TA Corporation DMA Q800) instrument, the temperature was increased from -30°C to 280°C at a rate of 10°C per minute at a frequency of 1 Hz and a deformation amount (strain) of 0.0%, and the storage modulus (G') corresponding to the temperature was measured to determine the storage modulus of the adhesive film at 130°C.

[0171] (5) Manufacturing of dicing die bonding film The adhesive film produced in (2) above was transferred to a dicing film (an adhesive layer with a thickness of 10 μm and a polyolefin film with a thickness of 100 μm) to produce a dicing die bonding film.

[0172] (6) Manufacturing of semiconductor equipment After peeling off the polyethylene terephthalate film that had been released from the manufactured dicing die bonding film, a prepared semiconductor wafer was pressed onto the top of the adhesive layer to bond it, a laser was focused into the wafer to selectively form a modified area, and then the adhesive film bonded to the semiconductor chip was separated by physical tension at a low temperature of -10°C.

[0173] The individualized chips were die-bonded to the substrate or chip base material using a die bonder (Shinkawa, SPA-400). The conditions at that time were 110°C for 0.5 seconds at approximately 1.5 kgf / cm². 2 Tack welding was performed. Afterwards, it was heated in a pressure oven (CMT, Pressure Cure Oven PCO) at 125°C and 7 kgf / cm². 2 It was cured for 30 minutes under these pressure conditions.

[0174] [Table 1]

[0175] [Comparative Example] Except for applying the components and content shown in Table 2 below, adhesive compositions for semiconductor packaging were prepared in the same manner as in Example 1. Then, using the adhesive compositions, adhesive films were manufactured in the same manner as in Example 1, and these were used to manufacture a dicing die bonding film and a semiconductor device.

[0176] [Table 2]

[0177] The components listed in Tables 1 and 2 above are as follows: *EPPN-201L: Solid epoxy resin (Nippon Kayaku Co., Ltd., epoxy equivalent 190g / eq.) *NC-2000L: Solid epoxy resin (Nippon Kayaku Co., Ltd., epoxy equivalent 237g / eq.) *EOCN-104S: Solid epoxy resin (Nippon Kayaku Co., Ltd., epoxy equivalent 218g / eq.) *NC-3000: Solid epoxy resin (Nippon Kayaku Co., Ltd., epoxy equivalent 275g / eq.) *KDS-8170: Liquid epoxy resin (Kukdo Chemical, epoxy equivalent 157g / eq.) *CEL2021P: Liquid epoxy resin (DAICEL, epoxy equivalent 130g / eq.) *RE-310S: Liquid epoxy resin (Nippon Kayaku, epoxy equivalent 180g / eq.) *EP0408: Organic-inorganic hybrid epoxy resin having the repeating unit of chemical formula 1 (epoxy equivalent 177 g / eq., epoxycyclohexyl POSS, (C8H 13 O) n (SiO 1.5 ) n (viscosity 500 Pa.s, hybrid plastics) *EP0409: Organic-inorganic hybrid epoxy resin having the repeating unit of chemical formula 1 (epoxy equivalent 167 g / eq., glycidyl POSS, (C6H 11 O2) n (SiO 1.5 ) n (viscosity 48 Pa.s, hybrid plastics) *GPH-65: Phenolic resin (Nippon Kayaku Co., Ltd., hydroxyl group equivalent 198 g / eq, softening point: 65°C) *KA-1160: Phenolic resin (DIC, hydroxyl group equivalent: 117g / eq, softening point 86℃) *KH-6021: Phenol resin (DIC, hydroxyl equivalent: 121g / eq, softening point 133℃) *KPH-F3075: Phenolic resin (Colon Oil & Chemicals, hydroxyl group equivalent: 175g / eq., softening point 75℃) *YA-050C: Filler (Admatex, spherical silica, average particle size approximately 50 nm) *2MZ-A: Imidazole hardening accelerator (SHIKOKU)

[0178] [Example Test] The following tests were performed on the adhesive compositions, adhesive films, or semiconductor devices according to the examples and comparative examples, and the results are shown in Tables 3 and 4 below.

[0179] (1) Evaluation of Die's rise A semiconductor wafer (12 inches in diameter, 500 μm thick) was subjected to backside polishing to produce a semiconductor wafer with a thickness of 100 μm.

[0180] After peeling off the release-treated polyethylene terephthalate film from the dicing die bonding film produced in each of the above examples and comparative examples, a prepared semiconductor wafer was pressed onto the top of the adhesive layer to bond it, a laser was focused into the wafer to selectively form a modified area, and then dicing was performed using a stealth dicing method in which the wafer and adhesive layer were separated along the selectively modified area line by physical tension at a low temperature of -10°C. Lifting of the adhesive layer was confirmed on the semiconductor wafer and dicing die bonding film after cutting.

[0181] If lifting occurred in the adhesive layer, it was evaluated as a defect; if it did not occur, it was evaluated as a good result.

[0182] (2) Void evaluation For the semiconductor devices obtained in the examples and comparative examples, those with a void area of ​​1% or less inside the semiconductor device were evaluated as good using Scanning Acoustic Tomography (SAT), and those with a void area exceeding 1% were evaluated as poor.

[0183] (3) Chip Crack Evaluation The semiconductor devices obtained in the examples and comparative examples were subjected to Epoxy Molding and Temperature Cycling Tests. Afterward, the presence or absence of cracks in the chip in the cross-section was observed using a scanning electron microscope (SEM). If no cracks occurred, the device was evaluated as good; if cracks occurred, it was evaluated as poor.

[0184] (4) Die-deflection evaluation The 20 μm thick adhesive films obtained in the examples and comparative examples were bonded to a 60 μm semiconductor wafer, and each chip was individually formed. As shown in Figure 1, a semiconductor device having a 750 μm overhang structure with the substrate chip was manufactured by die bonding.

[0185] After curing, the length of the warp in the overhang portion was measured and evaluated. A height of 2 μm or less was considered good, while anything exceeding 2 μm was considered poor.

[0186] (5) Reliability evaluation (thermal cycle test) Ten semiconductor devices were prepared for each of the examples and comparative examples. These were then treated under thermal cycling conditions of -65°C to 150°C, with support for 45 minutes at the minimum and maximum temperatures, and the presence or absence of delamination was evaluated. After 500 cycles, Scanning Acoustic Tomography (SAT) was used to determine if all 10 devices showed no delamination, and if even one device showed delamination, it was evaluated as defective.

[0187] [Table 3]

[0188] [Table 4]

[0189] Referring to Table 3 above, the adhesive compositions of the above examples or the adhesive films produced therefrom are suitable for temperatures of 120°C to 300°C and a load of 0.5 kgf / cm². 2 ~10 kgf / cm² 2 Under these pressure conditions, it was confirmed that the storage modulus at 130°C after curing was 30 MPa or higher, and the melt viscosity was 4,000 Pa·s or higher.

[0190] Even when using thin semiconductor chips as in these examples during the packaging process, it is possible to prevent cracks and warping of the semiconductor chips, and they can be provided with excellent adhesive strength and embedding properties. In particular, die lifting and chip cracking phenomena did not occur, and it was confirmed that the die deflection in the experimental examples was only 1.6 μm or less.

[0191] In contrast, as shown in Table 4 above, the adhesive compositions of Comparative Examples 1 and 2 induced void defects and poor connection conditions, failing all thermal cycle tests. Furthermore, not only did die lifting and chip cracking occur, but die deflection in the experimental examples also reached 2.0 μm or more.

Claims

1. It comprises a thermoplastic resin, a thermosetting resin, and a curing agent. Either it does not contain inorganic fillers, or it further contains inorganic fillers in an amount of 4.9% by weight or less relative to the total weight of the semiconductor packaging adhesive composition. The adhesive composition for semiconductor packaging was heated at a temperature of 120°C to 300°C and at a load of 0.5 kgf / cm². ２ ~10 kgf / cm² ２ The storage modulus at 130°C measured after curing under the specified pressure conditions was 50 to 500 MPa or higher. The melt viscosity of the semiconductor packaging adhesive composition, measured at 110°C with a shear rate of 5 rad / s, is between 3,000 Pa·s and 50,000 Pa·s. Adhesive composition for semiconductor packaging.

2. The aforementioned temperature range of 120°C to 300°C and 0.5 kgf / cm² ２ ~10 kgf / cm² ２ Curing under these pressure conditions is 7 kgf / cm ２ Under the pressure conditions, The process includes the steps of raising the temperature from 25°C to 125°C for 30 minutes, maintaining the temperature at 125°C for 30 minutes after the temperature increase, and cooling to 60°C after the maintenance. The adhesive composition for semiconductor packaging according to claim 1.

3. The semiconductor packaging adhesive composition is used for connecting a substrate to a semiconductor chip having a thickness of 100 μm or less, or for connecting two or more semiconductor chips having a thickness of 100 μm or less. The adhesive composition for semiconductor packaging according to claim 1.

4. The semiconductor packaging adhesive composition according to claim 1, wherein the thermoplastic resin comprises a (meth)acrylate resin containing repeating units substituted with glycidyl groups or epoxy groups.

5. The thermoplastic resin is a (meth)acrylate resin comprising repeating units substituted with glycidyl groups or epoxy groups and having a glass transition temperature of -20°C to 5°C; and A (meth)acrylate resin comprising repeating units substituted with glycidyl or epoxy groups and having a glass transition temperature of 7°C to 30°C; The adhesive composition for semiconductor packaging according to claim 1.

6. The adhesive composition for semiconductor packaging according to claim 1, wherein the thermosetting resin comprises a silsesquioxane compound substituted with a glycidyl group or an epoxy group.

7. The adhesive composition for semiconductor packaging according to claim 1, wherein the thermosetting resin further comprises one or more epoxy resins selected from the group consisting of bisphenol epoxy resins, biphenyl epoxy resins, naphthalene epoxy resins, fluorene epoxy resins, phenol novolac epoxy resins, cresol novolac epoxy resins, xyloc epoxy resins, trishydroxylphenylmethane epoxy resins, tetraphenylmethane epoxy resins, dicyclopentadiene type epoxy resins, and dicyclopentadiene modified phenol type epoxy resins.

8. The semiconductor packaging adhesive composition according to claim 1, wherein the curing agent comprises one or more selected from the group consisting of amine-based curing agents, phenol-based curing agents, and acid anhydride-based curing agents.

9. The semiconductor packaging adhesive composition according to claim 1, comprising 5 to 500 parts by weight of the thermoplastic resin and 1 to 150 parts by weight of the curing agent, per 100 parts by weight of the thermosetting resin.

10. A semiconductor adhesive film comprising the semiconductor packaging adhesive composition described in claim 1.

11. A base film and An adhesive layer formed on the base film, A dicing die bonding film comprising an adhesive layer formed on the adhesive layer and including the semiconductor adhesive film described in claim 10.

12. circuit board and One or more semiconductor chips formed on the substrate, The adhesive layer includes an adhesive layer located between the substrate and a semiconductor chip formed on the substrate, or between two or more semiconductor chips of the semiconductor chip. The adhesive layer comprises a cured product of the semiconductor package adhesive composition described in claim 1, wherein the semiconductor device is provided.

13. The semiconductor device according to claim 12, wherein the thickness of each of the semiconductor chips is 100 μm or less.

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