Method for manufacturing a semiconductor device, and a semiconductor device.

Abstract

To provide a method for manufacturing a semiconductor device which can surely mount a semiconductor member (semiconductor die).SOLUTION: There is provided a method for mounting on a supporting body such as a re-wiring layer in a state (face up) in which a connection terminal of a bridge die 20 is faced upward, as one example of a method for manufacturing a semiconductor device. The method forms a resin layer 23 so as to cover a plurality of terminal electrodes 22 on a semiconductor substrate 21 of a bridge die 20 with a thermosetting resin film (for example, DAF) or a thermosetting adhesive, before an adhesive layer is formed on a rear face of the bridge die. Each bridge die 20 adsorbs a whole surface of the cured resin layer 23 by a collet by vacuum, is mounted on a supporting body such as a wiring layer 12, and a semiconductor device is manufactured. The method can adsorb the whole surface 23a when the bridge die 20 is adsorbed by the collet C, and accordingly can suppress bending of the bridge die, compared to a method for adsorbing the bridge dies by only an outer edge while avoiding the terminal electrode.SELECTED DRAWING: Figure 7

Description

Technical Field

[0001] The present disclosure relates to a method for manufacturing a semiconductor device and a semiconductor device.

Background Art

[0002] In recent years, along with the rapid increase in functionality of electronic devices represented by AI, HPC and the like, the increase in size and density of semiconductor packages has been progressing rapidly. Package structures and mounting processes are becoming more complex and diversified, which is not limited to high-density surface mounting, and includes inorganic (silicon) or organic interposer (Bridgedie / RDL) technology, 2.xD mounting using such technology, and 3D mounting (HBM / Chiplet) technology utilizing TSV. For example, Resonac Corporation, with the "Packaging Solution Center" as its main base, is carrying out technological development of next-generation semiconductor packaging processes from the perspective of customers (semiconductor manufacturers), which combines mounting processes and materials.

[0003] As a technology in such a semiconductor package field, Patent Document 1 discloses a method for manufacturing a semiconductor device in which a semiconductor die is mounted face-up on a carrier and sealed, a wiring layer is formed on the sealing layer, and another semiconductor die is further mounted on the wiring layer. Patent Document 2 discloses another method for manufacturing a semiconductor device.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Summary of the Invention

Problem to be Solved by the Invention

[0005] In the manufacturing method described in Patent Document 1, to mount a semiconductor die onto a support, it is conceivable to lift the semiconductor die by suctioning the terminal electrode side with a collet and then mount the semiconductor die onto the support. In this case, as shown in Figure 9(a), the outer circumference of the semiconductor die 120 is suctioned with the collet C1 so as to avoid the internal region where the terminal electrodes 122 (copper pillars, etc.) are provided. However, as semiconductor dies have become thinner, performing such suction can cause the semiconductor die to bend. In particular, when obtaining multiple semiconductor dies by framing a semiconductor wafer, the semiconductor die is pushed up from the back side with a pin or the like when peeling it off the dicing tape, which can accelerate the bending of the semiconductor die, or in some cases, cause the semiconductor die to crack. Also, as shown in Figure 9(b), when mounting and pressing the semiconductor die 120 onto the support after suction, the load from the collet C1 is applied only to the outer circumference of the semiconductor die 120, making it difficult to apply load to the central part of the back surface of the die, which can result in insufficient pressing or the formation of a void in the central part.

[0006] The purpose of this disclosure is to provide a method for manufacturing a semiconductor device that enables reliable mounting of semiconductor components (semiconductor dies). [Means for solving the problem]

[0007] [1] In one aspect, this disclosure relates to a method for manufacturing a semiconductor device. This method for manufacturing a semiconductor device comprises the steps of: preparing a semiconductor member including a semiconductor substrate having a first surface and a second surface on the opposite side; a plurality of terminal electrodes provided on the first surface of the semiconductor substrate; and a cured resin layer provided on the first surface so as to cover the plurality of terminal electrodes; lifting the semiconductor member by adsorbing the surface of the cured resin layer of the semiconductor member with a holding member; and attaching the semiconductor member to a support.

[0008] In this semiconductor device manufacturing method, a hardened resin layer is provided on the first surface of the semiconductor device so as to cover multiple terminal electrodes. The surface of this hardened resin layer is then adsorbed and lifted, and the semiconductor device is subsequently attached. In this case, since multiple terminal electrodes are covered by the resin layer, the semiconductor device can be lifted by the holding member without avoiding the terminal electrodes, thus suppressing bending or cracking of the semiconductor device (semiconductor die). Furthermore, because multiple terminal electrodes are covered by the resin layer, when attaching the semiconductor device to the support, the load can be applied to the entire semiconductor device in the planar direction, ensuring that the semiconductor device is securely attached to the support. Thus, this semiconductor device manufacturing method makes it possible to securely attach semiconductor devices. Moreover, in this semiconductor device manufacturing method, the portion covering the terminal electrodes is formed from a hardened resin layer, making its fabrication easy. Note that the term "hardened resin layer" here refers to a layer that is hardened to the extent that at least one of adsorption and load application is possible, and includes cases where it is not completely hardened (so-called C-stage).

[0009] [2] In the method for manufacturing a semiconductor device described in [1] above, the step of preparing a semiconductor material may include the steps of forming a resin layer containing a curable resin composition on the first surface of a semiconductor substrate so as to cover a plurality of terminal electrodes, and the step of curing the resin layer to obtain a cured resin layer. In this case, a resin layer that protects the plurality of terminal electrodes can be easily formed.

[0010] [3] In the method for manufacturing a semiconductor device described in [1] or [2] above, the cured resin layer is preferably formed by curing a resin film containing a curable resin composition after attaching it to the first surface of a semiconductor substrate. In this case, a resin layer that protects multiple terminal electrodes can be easily formed.

[0011] [4] In the semiconductor device manufacturing method described in [1] or [2] above, the cured resin layer may be formed by applying a liquid adhesive containing a curable resin composition to the first surface of a semiconductor substrate and then curing it. In this case, a resin layer protecting multiple terminal electrodes can be easily formed.

[0012] [5] In any of the semiconductor device manufacturing methods described in [1] to [4] above, it is preferable that the cured resin layer contains an inorganic filler. In this case, the hardness (elastic modulus, etc.) of the resin layer can be improved, and bending and cracking of the semiconductor component can be further suppressed. In addition, the inclusion of an inorganic filler can also suppress warping of the semiconductor component containing the resin layer.

[0013] [6] In the method for manufacturing a semiconductor device described in [5] above, the inorganic filler content in the cured resin layer may be 30% by mass or more based on the total amount of solids contained in the resin layer before curing. In this case, warping of the semiconductor component can be suppressed more reliably.

[0014] [7] In the semiconductor device manufacturing method described in [5] or [6] above, it is preferable that the average particle size of the inorganic filler in the cured resin layer is 20 μm or less. In this case, even if the terminal electrodes of the semiconductor member and their pitches are miniaturized, the resin and filler can be inserted (filled) between each terminal electrode, and the terminal electrodes can be reliably covered with the resin layer. Furthermore, warping of the cured resin layer can be suppressed.

[0015] [8] In any of the semiconductor device manufacturing methods described in [1] to [7] above, the elastic modulus of the cured resin layer at room temperature may be 10 MPa or more. In this case, bending and cracking of the semiconductor component can be further suppressed. Also, when polishing the cured resin layer to expose the terminal electrodes, the polishing work can be easily performed. The elastic modulus referred to here means Young's modulus. Room temperature refers to 25°C. The high elastic modulus of the cured resin layer makes it easy to grind the resin layer, copper pattern, etc., in subsequent processes. As mentioned above, the cured resin layer may not be completely cured, but it is sufficient that it is hard enough to be polished during the polishing process.

[0016] [9] In any of the semiconductor device manufacturing methods described in [1] to [8] above, the step of preparing a semiconductor component preferably includes: a step of preparing a semiconductor wafer including a semiconductor substrate, wherein a plurality of electrodes including a plurality of terminal electrodes are provided on the first surface of the semiconductor wafer; a step of forming a wafer resin layer containing a curable resin composition on the first surface of the semiconductor wafer so as to cover the plurality of electrodes; a step of curing the wafer resin layer; and a step of obtaining a semiconductor component by dicing the semiconductor wafer into individual pieces. In this case, a plurality of semiconductor components can be manufactured at once. Furthermore, according to this manufacturing method, even when the semiconductor component is diced into individual pieces, it can be peeled off the dicing tape without bending or cracking.

[0017]

[10] Any of the semiconductor device manufacturing methods described in [1] to [9] above may further include the step of sealing the semiconductor component with a sealing material after the semiconductor component has been attached to the support, thereby forming a sealing material layer on the support.

[0018]

[11] In the semiconductor device manufacturing method described in

[10] above, it is preferable that the average particle size of the inorganic filler contained in the encapsulating material layer is larger than the average particle size of the inorganic filler contained in the cured resin layer. By including large-sized inorganic fillers in the encapsulating material, thermal warping of the encapsulating material layer can be reliably suppressed. In particular, in large-format processes, reliable adsorption becomes possible in high-precision processing in subsequent processes.

[0019]

[12] In the method for manufacturing a semiconductor device described in

[10] or

[11] above, it is preferable that the difference between the coefficient of thermal expansion of the sealing material layer and the coefficient of thermal expansion of the cured resin layer is within 150 ppm / K. In this case, the behavior of the sealing material layer and the resin layer when heat is applied to the manufactured semiconductor device becomes uniform, and thermal problems such as displacement during expansion can be reduced.

[0020]

[13] The method for manufacturing a semiconductor device according to any one of the above

[10] to

[12] may further comprise a step of grinding the cured resin layer together with the sealing material layer such that the tip end of each of the plurality of terminal electrodes is exposed from the cured resin layer. In this case, a fine wiring layer or the like can be formed with high accuracy on the surface of the ground sealing material layer or the like.

[0021]

[14] In the method for manufacturing a semiconductor device according to any one of the above [1] to

[13] , the thickness of the cured resin layer may be 15 µm or more, or 30 µm or more in at least one of the lifting step and the attaching step. In this case, bending and cracking of the semiconductor member can be suppressed more reliably.

[0022]

[15] In the method for manufacturing a semiconductor device according to any one of the above [1] to

[14] , an adhesive member for attaching the semiconductor member to a support may be provided on the second surface of the semiconductor substrate. In this case, the semiconductor member can be more reliably attached to the support. Furthermore, it is easy to attach the semiconductor member to the support.

[0023]

[16] In the method for manufacturing a semiconductor device according to the above

[15] , the adhesive member may be provided on the second surface of the semiconductor substrate before the step of attaching the semiconductor member to the support. In this case, the work of attaching the semiconductor member to the support is simplified.

[0024]

[17] In the method for manufacturing a semiconductor device according to the above

[15] or

[16] , a difference between a linear expansion coefficient of the cured resin layer and a linear expansion coefficient of the adhesive member may be within 150 ppm / K. In this case, thermal expansion of the cured resin layer and the adhesive member that sandwich the semiconductor substrate becomes substantially the same, so that it is possible to prevent the position or parallelism of the semiconductor substrate from being impaired, and to suppress warpage of a mounted chip.

[0025]

[18] In the method for manufacturing a semiconductor device according to any one of

[15] to

[17] above, the adhesive member is preferably the same member as the resin layer before being cured. In this case, since the members arranged above and below the semiconductor substrate are of the same type, they exhibit the same behavior even when heat or the like is applied, and defects caused by differences in behavior can be reduced.

[0026]

[19] In the method for manufacturing a semiconductor device according to any one of [1] to

[18] above, the thickness of the cured resin layer may be 50% to 150% of the height of the plurality of terminal electrodes. In this case, since the thickness of the resin layer and the height of the terminal electrodes are substantially equal, lifting and attaching the semiconductor member can be performed more reliably. The height of the plurality of terminal electrodes as used herein means the average height of the heights of the plurality of terminal electrodes.

[0027]

[20] In the method for manufacturing a semiconductor device according to any one of [1] to

[19] above, it is preferable that in the lifting step, the holding member sucks the entire surface of the cured resin layer to perform lifting, and in the attaching step, the holding member applies a load to the entire surface of the cured resin layer to perform attaching. In this case, bending or cracking of the semiconductor member can be more reliably suppressed, and the semiconductor member can be more reliably attached to the support body.

[0028]

[21] In the method for manufacturing a semiconductor device according to any one of [1] to

[20] above, the ionic impurity concentration of the cured resin layer is preferably 5 ppm or less. In this case, migration between the plurality of terminal electrodes covered by the cured resin layer can be prevented.

[0029]

[22] In the method for manufacturing a semiconductor device according to any one of [1] to

[21] above, the adhesive strength between the cured resin layer and the first surface of the semiconductor substrate may be 1 MPa or more. In this case, peeling of the resin layer of the semiconductor member in the manufactured semiconductor device is prevented.

[0030]

[23] In any of the semiconductor device manufacturing methods described in [1] to

[22] above, it is preferable that the adhesive strength between the cured resin layer and the first surface of the semiconductor substrate is 3 MPa or more. In this case, peeling of the resin layer of the semiconductor component is more reliably prevented in the manufactured semiconductor device.

[0031]

[24] Any of the semiconductor device manufacturing methods described in [1] to

[23] above may further include a step of mounting a first semiconductor die and a second semiconductor die on the first surface side of the semiconductor member after the semiconductor member has been attached to the support, and in the mounting step, the first semiconductor die and the second semiconductor die may be connected by the semiconductor member. In this case, the semiconductor die can be made to function as a bridge die.

[0032]

[25] The disclosure also relates in another aspect to a semiconductor device, which comprises a semiconductor member and a support on which the semiconductor member is mounted. The semiconductor member includes a semiconductor substrate having a first surface and a second surface on the opposite side, a plurality of terminal electrodes provided on the first surface of the semiconductor substrate, and a cured resin layer provided on the first surface so as to cover the plurality of terminal electrodes.

[0033]

[26] The semiconductor device described in

[25] above may further include an adhesive member for attaching a semiconductor component to a support, and it is preferable that the difference between the coefficient of thermal expansion of the cured resin layer and the coefficient of thermal expansion of the cured adhesive member is within 150 ppm / K. In this case, the thermal expansion of the cured resin layer and the cured adhesive member sandwiching the semiconductor substrate is approximately the same, so that the position or parallelism of the semiconductor substrate in the semiconductor device is not impaired, and warping of the mounted chip can be suppressed.

[0034]

[27] The semiconductor device described in

[25] or

[26] above may further include a sealing layer for sealing semiconductor components.

[0035]

[28] In the semiconductor device described in

[27] above, the average particle size of the inorganic filler contained in the encapsulating layer may be larger than the average particle size of the inorganic filler contained in the cured resin layer. By including larger inorganic fillers in the encapsulating layer, thermal warping of the encapsulating layer can be reliably suppressed.

[0036]

[29] In the semiconductor device described in

[27] or

[28] above, the difference between the coefficient of thermal expansion of the sealing material layer and the coefficient of thermal expansion of the cured resin layer may be within 150 ppm / K. In this case, the behavior of the sealing material layer and the resin layer when heat is applied to the semiconductor device becomes uniform, and thermal problems such as displacement during expansion can be reduced.

[0037]

[30] Any of the semiconductor devices described in

[25] to

[29] above may further include a first semiconductor die and a second semiconductor die provided on the first surface side of the semiconductor substrate, and the multiple terminal electrodes of the semiconductor member may be connected to the first semiconductor die and the second semiconductor die. [Effects of the Invention]

[0038] According to this disclosure, it is possible to provide a method for manufacturing a semiconductor device that can reliably mount semiconductor components. [Brief explanation of the drawing]

[0039] [Figure 1] Figure 1 is a cross-sectional view showing an example of the cross-sectional configuration of a semiconductor device according to one embodiment of the present invention. [Figure 2] Figures 2(a) to 2(d) are cross-sectional views showing the manufacturing method of the semiconductor device shown in Figure 1. [Figure 3] Figures 3(a) and 3(b) are cross-sectional views illustrating the manufacturing method of the semiconductor device shown in Figure 1, and show the steps performed after the steps shown in Figure 2. [Figure 4] Figures 4(a) and 4(b) are cross-sectional views illustrating the manufacturing method of the semiconductor device shown in Figure 1, and show the steps performed after the steps shown in Figure 3. [Figure 5]Figures 5(a) to 5(c) are cross-sectional views showing the manufacturing method of the semiconductor device shown in Figure 1, and represent steps performed after the steps shown in Figure 4. [Figure 6] Figures 6(a) and 6(b) illustrate the process of picking up the bridge die. [Figure 7] Figures 7(a) to (e) are cross-sectional views showing a method for fabricating multiple bridge dies simultaneously using a semiconductor wafer. [Figure 8] Figure 8 is a cross-sectional view showing a modified bridge die. [Figure 9] Figures 9(a) and 9(b) illustrate the process of picking up and crimping a bridge die using a conventional method. [Modes for carrying out the invention]

[0040] Embodiments of the present invention will be described in detail below with reference to the drawings. In the following description, the same or corresponding parts will be denoted by the same reference numerals, and redundant explanations will be omitted. Furthermore, unless otherwise specified, positional relationships such as up, down, left, and right will be based on the positional relationships shown in the drawings. Moreover, the dimensional ratios in the drawings are not limited to those shown.

[0041] In this specification, the term "layer" includes not only structures that are formed across the entire surface when observed in a plan view, but also structures that are formed in only a part of the surface. In this specification, the term "process" includes not only independent processes, but also processes that cannot be clearly distinguished from other processes, as long as their intended function is achieved.

[0042] In this specification, numerical ranges indicated using "~" represent a range that includes the numbers before and after "~" as the minimum and maximum values, respectively. In numerical ranges described in stages in this specification, the upper or lower limit of one stage of the numerical range may be replaced with the upper or lower limit of another stage of the numerical range. In numerical ranges described in this specification, the upper or lower limit of that numerical range may be replaced with the values ​​shown in the examples.

[0043] Figure 1 shows an example of a semiconductor device manufactured by a manufacturing method according to one embodiment of the present invention. As shown in Figure 1, the semiconductor device 1 comprises semiconductor dies 2a, 2b, semiconductor die 3, substrate 4, wiring layers 5a, 5b, encapsulating material layers 6a, 6b, connecting electrodes 7a, 7b, and bumps 8a, 8b. The semiconductor dies 2a, 2b (first semiconductor die, second semiconductor die) are, for example, semiconductor chips such as LSI chips, CMOS sensors, and memory. The semiconductor die 3 is, for example, a bridge die or a silicon capacitor, and connects semiconductor die 2a and semiconductor die 2b via connecting electrodes 7a. In the semiconductor device 1, a wiring layer 5a including a part (lower part) of the connecting electrodes 7b, an encapsulating material layer 6a encapsulating the semiconductor die 3, a wiring layer 5b including a part (upper part) of the connecting electrodes 7b and the connecting electrodes 7a, and an encapsulating material layer 6b encapsulating the semiconductor dies 2a, 2b are sequentially stacked on the substrate 4. The connecting electrodes 7b are connected to the substrate 4 via a plurality of bumps 8a. The circuit board 4 is further provided with several additional bumps 8b for connecting to external devices.

[0044] In this semiconductor device 1, a semiconductor die 3 is provided face-up within a sealing material layer 6a. The semiconductor die 3 includes a semiconductor substrate 3a, a plurality of terminal electrodes 3b provided on the upper surface (first surface) of the semiconductor substrate 3a, a resin layer 3c formed on the upper surface of the semiconductor substrate 3a to cover the plurality of terminal electrodes 3b, and an adhesive member 3d provided on the lower surface (second surface) of the semiconductor substrate 3a. The resin layer 3c is a resin film containing a thermosetting adhesive such as a die attach film (DAF), or a liquid thermosetting adhesive, and is a cured resin layer obtained by thermosetting either of these. That is, the material constituting the resin layer 3c has gone through a semi-cured (B stage) state and then reached a fully cured (C stage) state through a subsequent curing treatment. However, the resin layer 3c may be in a cured state that has not reached the fully cured state, as long as it does not cause any problems as a semiconductor device 1. The curable resin composition constituting the resin layer 3c includes a thermosetting resin, and may include at least one selected from the group consisting of epoxy resin, bismaleimide resin, triazine resin, and phenolic resin. The curable resin composition may further include a curing agent, a curing accelerator, and an inorganic filler. The tips of the multiple terminal electrodes 3b are exposed on the surface of the resin layer 3c. The multiple terminal electrodes 3b are connected to the semiconductor dies 2a and 2b via connecting electrodes 7a. For example, the semiconductor die 3, which is a bridge die, is an extremely thin semiconductor die, and may have a thickness of 100 μm or less, and may have a thickness of 50 μm or less. Furthermore, the terminal electrodes 3b and their pitch on the semiconductor die 3 have also been miniaturized, with the diameter of the terminal electrodes 3b being, for example, 10 μm to 50 μm, the terminal pitch (separation distance) between the terminal electrodes 3b being, for example, 5 μm to 20 μm, and the height of the terminal electrodes 3b being, for example, 20 μm to 50 μm. However, the size of the terminal electrodes 3b is not limited to these. The adhesive member 3d is a member that adheres and fixes the semiconductor die 3 to the wiring layer 5a, etc., and may be formed from the same material as the resin layer 3c (e.g., DAF). The adhesive member 3d may be formed from a material having a coefficient of thermal expansion equivalent to that of the material (cured product) constituting the resin layer 3c. For example, the difference between the coefficient of thermal expansion of the cured resin layer 3c and the coefficient of thermal expansion of the cured adhesive member 3d is preferably within 150 ppm / K.Furthermore, the adhesive member 3d may have a thickness equal to, greater than, or less than, the thickness of the resin layer 3c. Similarly, the difference between the coefficient of thermal expansion of the sealing material layer 6a and the coefficient of thermal expansion of the cured resin layer 3c may be within 150 ppm / K. In addition, the sealing material layer 6a may contain inorganic fillers, and the average particle size of the inorganic fillers contained in the sealing material layer 6a may be greater than the average particle size of the inorganic fillers contained in the cured resin layer 3c.

[0045] Next, an example of a method for manufacturing the semiconductor device 1 will be described with reference to Figures 2 to 5. Figures 2 to 5 are cross-sectional views showing the method for manufacturing the semiconductor device 1 described above in order. In this method for manufacturing the semiconductor device, as shown in Figure 2(a), first, a temporary fixing layer 11 is formed on the carrier substrate 10. The carrier substrate 10 is, for example, a glass substrate. The temporary fixing layer 11 is, for example, a curable adhesive layer, and is configured to be peeled off together with the carrier substrate 10 by light or heat in a process described later. Once the temporary fixing layer 11 is formed, a wiring layer 12 is formed on the temporary fixing layer 11. The wiring layer 12 is composed of a plurality of connecting electrodes 13 and an insulating portion. The wiring layer 12 is, for example, a rewiring layer (RDL). Each of the connecting electrodes 13 is, for example, composed of a copper pillar, and is formed so that the upper half protrudes from the surface of the insulating portion. The connecting electrodes 13 are electrodes that are connected to the semiconductor dies 25 and 26, which will be described later (see Figure 3(b)), and are formed on the outer or outer periphery side in the planar direction of the wiring layer 12. In the semiconductor device manufacturing method shown in Figure 1, the connecting electrodes 13 are not formed in the inner or central portion of the wiring layer 12 in the planar direction, but a configuration in which they are formed is also possible.

[0046] Next, as shown in Figure 2(b) and Figure 6, a semiconductor die 20 (semiconductor component) is prepared. The semiconductor die 20 comprises a semiconductor substrate 21, a plurality of terminal electrodes 22, a resin layer 23 (cured resin layer), and an adhesive member 24. The semiconductor substrate 21 includes an upper surface 21a (first surface) and a lower surface 21b (second surface) on the opposite side. The plurality of terminal electrodes 22 are, for example, copper pillars provided on the upper surface 21a of the semiconductor substrate 21 and are connected to wiring (not shown) within the semiconductor substrate 21. The diameter of each terminal electrode 22 is, for example, 10 μm to 50 μm, the terminal pitch (separation distance) between terminal electrodes 3b is, for example, 5 μm to 20 μm, and the height of the terminal electrodes 3b is, for example, 20 μm to 50 μm. However, the size of the terminal electrodes 22 is not limited to these. The adhesive member 24 is a component for attaching and fixing the semiconductor die 20 to a support such as the wiring layer 12, and is composed of a film member containing a thermosetting adhesive such as a die attach film (DAF). At this stage, the adhesive member 24 is not cured and will be thermocured in a process described later.

[0047] In the semiconductor die 20, a resin layer 23 is provided on the upper surface 21a of the semiconductor substrate 21 so as to cover a plurality of terminal electrodes 22. Such a resin layer 23 can be formed, for example, by attaching a resin film made from a thermosetting adhesive (curable resin composition) to the upper surface 21a of the semiconductor substrate 21 and then thermocuring it. In this case, a DAF similar to that of the adhesive member 24 can be used. The resin layer 23 may be formed to cover the entire terminal electrodes 22, or it may be formed so that the tips of the terminal electrodes 22 are exposed from the surface of the resin layer 23. The resin layer 23 may also be formed by applying a liquid adhesive containing a thermosetting adhesive (curable resin composition) similar to that of the resin film to the upper surface 21a of the semiconductor substrate 21 and then curing it. The resin layer 23 only needs to be cured to the extent that it can withstand at least one of adsorption and load application, and can also be polished as described later, and does not need to be completely cured (so-called C stage). However, it may be completely cured. The thickness of the resin layer 23 may be, for example, 50 μm or less, 20 μm or less, 10 μm or less, 9 μm or less, 8 μm or less, or 7 μm or less, or 1 μm or more, 2 μm or more, 3 μm or more, 4 μm or more, 5 μm or more, or 10 μm or more. The thickness of the resin layer 23 may be between 50% and 150% of the height of the multiple terminal electrodes 22, or between 80% and 120%, and is preferably the same thickness as the height of the terminal electrodes 22. Here, the thickness of the resin layer 23 refers to the thickness after curing, and the height of the multiple terminal electrodes 22 refers to the average height of the multiple terminal electrodes 22. Furthermore, even after polishing the resin layer 23 in a process described later, the thickness of the resin layer 23 may be between 50% and 150% of the height of the multiple terminal electrodes 22, or between 80% and 120%. In this case, the thickness of the resin layer 23 before polishing may be thicker than the thickness of the adhesive member 24.

[0048] The thermosetting adhesive constituting this film includes, for example, a high molecular weight resin component and a thermosetting component. The high molecular weight resin component may include, for example, at least one resin selected from the group consisting of acrylic rubber, polyimide, and phenoxy resin. The high molecular weight resin component may have reactive groups such as epoxy groups. The weight-average molecular weight (standard polystyrene equivalent value by GPC method) of the high molecular weight resin component may be 100,000 to 3,000,000. The content of the high molecular weight resin component may be 30 to 80 parts by mass per 10 parts by mass of the total mass of the resin layer 23.

[0049] The thermosetting component that may be included in the resin layer 23 is a compound having a reactive group that forms a crosslinked structure by self-polymerization and / or reaction with a curing agent. The thermosetting component may include, for example, at least one selected from the group consisting of epoxy resin, bismaleimide resin, triazine resin, and phenol resin. The content of the thermosetting component may be 1 to 30 parts by mass per 100 parts by mass of the resin layer 23. The thermosetting adhesive constituting the resin layer 23 may contain other components as needed. Examples of other components include a curing agent that reacts with the thermosetting component, a curing accelerator that promotes the reaction between the thermosetting component and the curing agent, a coupling agent (e.g., a silane coupling agent), and a filler (e.g., silica).

[0050] The resin layer 23 may contain inorganic fillers. Specific examples of inorganic fillers include glass, silica, alumina, titanium oxide, carbon black, mica, and boron nitride. Among these, silica, alumina, titanium oxide, and boron nitride are preferred from the viewpoint of handling and processability (versatility), and silica, alumina, and boron nitride are more preferred from the viewpoint of dispersibility in the resin and ease of particle size control. These may be used individually or in combination of two or more. The average particle diameter of the inorganic fillers contained in the resin layer 23 may be, for example, 20 μm or less, or 10 μm or less, and the maximum particle diameter of the inorganic fillers may be, for example, 30 μm or less. It is preferable that the average particle diameter of the inorganic fillers is 5 μm or less and the maximum particle diameter of the inorganic fillers is 20 μm or less. By having an average particle diameter of 10 μm or less and a maximum particle diameter of 30 μm or less, the gaps between terminals can be filled without any gaps when the resin layer is formed on the terminal surface, and warping after the resin layer has hardened can be suppressed. There are no particular restrictions on the lower limit of the average particle size and the lower limit of the maximum particle size of the inorganic filler, but both may be 0.001 μm or larger.

[0051] Methods for measuring the average and maximum particle diameters of inorganic fillers include, for example, measuring the particle size of about 20 inorganic fillers using a scanning electron microscope (SEM). An example of an SEM-based measurement method is to prepare a sample by heat-curing (preferably at 150-180°C for 1-10 hours) a resin composition containing inorganic fillers, then cut the central portion of this sample and observe the cross-section with an SEM. In this case, it is preferable that the probability of fillers with a particle diameter of 3 μm or less in the cross-section is 80% or more of the total fillers.

[0052] Furthermore, the inorganic filler content in the resin layer 23 may be 10% to 95% by mass, based on the total amount of solids contained in the resin layer 23 before curing. Preferably, the inorganic filler content in the resin layer 23 is 20% or more by mass, more preferably 30% or more by mass, particularly preferably 40% or more by mass, and most commonly 40% to 95% by mass, based on the total amount of solids contained in the resin layer 23 (adhesive) before curing. The elastic modulus (Young's modulus) of such a resin layer 23 may be, for example, 10 MPa or more, or 1.0 GPa or more, at room temperature (25°C). Furthermore, the coefficient of linear expansion of the resin layer 23 below the glass transition temperature may be, for example, 10 ppm / K to 200 ppm / K. The adhesive member 24 may have the same configuration as the resin layer 23, and may contain inorganic fillers as described above. In this case, the elastic modulus of the adhesive member 24 at room temperature may be 10 MPa or more, and the coefficient of linear expansion may be, for example, 10 ppm / K to 200 ppm / K. Preferably, the difference between the coefficient of linear expansion of the resin layer 23 and the coefficient of linear expansion of the adhesive member 24 is within 150 ppm / K. The difference between the coefficient of linear expansion of the resin layer 23 and the coefficient of linear expansion of the adhesive member 24 may also be within 150 ppm / K even after the adhesive member 24 has hardened (i.e., after it has become the semiconductor device 1).

[0053] In the material forming the resin layer 23, it is preferable that the concentration of ionic impurities is reduced. Specifically, the concentration of ionic impurities in the cured resin layer 23 is, for example, 5 ppm or less, may be 3 ppm or less, preferably 1 ppm or less, more preferably 0.5 ppm or less, and even more preferably 0.3 ppm or less. This prevents migration between the multiple terminal electrodes 22 covered by the resin layer 23, and allows the resin layer 23 to ensure insulation between the terminal electrodes 22. Since the resin layer 23 remains as a component of the manufactured semiconductor device 1 (it does not peel off during manufacturing), it is preferable that it has such a migration prevention function. Examples of ionic impurities here include sodium (Na), potassium (K), and chlorine (Cl).

[0054] Furthermore, since the resin layer 23 remains as a component of the manufactured semiconductor device 1, it is preferable that it is securely fixed to the upper surface 21a of the semiconductor substrate 21 in the cured state. Specifically, the adhesive strength between the cured resin layer 23 and the upper surface 21a of the semiconductor substrate 21 is 1 MPa or more, preferably 3 MPa or more.

[0055] Next, once the preparation of the semiconductor die 20 with the above configuration is complete, the entire surface 23a of the resin layer 23 of the semiconductor die 20 is vacuum-adsorbed and lifted by a collet C, as shown in Figures 6(a) and 6(b). The collet C is made of an elastic material such as rubber. The semiconductor die 20 is then moved to a predetermined position on the wiring layer 12 by the vacuum-adsorbed collet C and attached and fixed to the predetermined position on the wiring layer 12 by an adhesive member 24. During this attachment, since the terminal electrodes 22 of the semiconductor die 20 are covered by the resin layer 23, the entire surface 23a of the resin layer 23 can be pressed with the collet C to fix it in place. This results in the state shown in Figure 2(b). The semiconductor die 20 is positioned so that the terminal electrodes 22 face upward.

[0056] Next, as shown in Figure 2(c), when the semiconductor die 20 is mounted (attached) on the wiring layer 12, the semiconductor die 20 and the connecting electrode 13 are sealed with a sealing material to form a sealing material layer 14 on the wiring layer 12. The sealing material layer 14 is formed by including a thermosetting resin such as epoxy resin, and is cured by heat or the like after sealing is performed. This thermal curing may also cure the adhesive member 24 of the semiconductor die 20. The sealing material constituting the sealing material layer 14 is composed of a thermosetting resin composition, for example, epoxy resin and a curing agent. The sealing material constituting the sealing material layer 14 may further contain an inorganic filler, for example, silica filler. The average particle size of the inorganic filler contained in the sealing material may be, for example, 50 μm or less, 25 μm or less, 10 μm or less, or 0.01 μm or less. The encapsulating material constituting the encapsulating layer 14 preferably contains large-particle inorganic fillers to suppress warping during or after the manufacturing of the semiconductor device 1, and preferably contains inorganic fillers with an average particle size larger than the average particle size of the inorganic fillers contained in the resin layer 23 of the semiconductor die 20. If the terminal electrodes 22 of the semiconductor die 20 are not covered by the resin layer 23, the space between the terminal electrodes 22 will be sealed by the encapsulating layer 14, and inorganic fillers with a particle size smaller than the space between the terminal electrodes 22 will be used. In this case, for example, the encapsulating resin tends to become less elastic, making grinding in subsequent grinding processes difficult, or causing warping during or after the manufacturing of the semiconductor device 1. However, as in this embodiment, when the terminal electrodes 22 of the semiconductor die 20 are covered by the resin layer 23, it is no longer necessary to consider the ability to fill the space between the terminal electrodes 22 when selecting the material for the encapsulating material constituting the encapsulating layer 14, and it becomes possible to design flexible resins and fillers that take warping and other issues into consideration.

[0057] Next, once the sealing layer 14 is formed, the sealing layer 14 is polished by CMP or the like, as shown in Figure 2(d). This exposes the tip 13a of the connecting electrode 13 to the outside of the sealing layer 14a, and the tip 22a of the terminal electrode 22 of the semiconductor die 20 to the outside of the surface 23a of the resin layer 23. As a result, the sealing layer 14 is thinned to the sealing layer 14a shown in Figure 2(d). The elastic modulus (Young's modulus) of such sealing layers 14 and 14a may be, for example, 3.0 GPa or more. The coefficient of linear expansion of the sealing layers 14 and 14a may be 5 ppm / K to 150 ppm / K, and the difference with the coefficient of linear expansion of the resin layer 23 may be 150 ppm / K or less, preferably 100 ppm / K or less. The thickness of the polished resin layer 23 may be 20 μm or more. When polishing the resin layer 23 as described above, the tip of the terminal electrode 22 may also be polished in the same manner.

[0058] Next, once the sealing layer 14a is formed, a wiring layer 15 is formed on top of the sealing layer 14a, as shown in Figure 3(a). The wiring layer 15 may be, for example, a redistribution layer (RDL). The wiring layer 15 has a plurality of connecting electrodes 16 and a plurality of connecting electrodes 17 formed thereon. The parts of the wiring layer 15 other than the electrodes are insulating parts. The connecting electrodes 16 connect an external device to the semiconductor dies 25 and 26, which will be described later, and are connected to, for example, the connecting electrode 13. The connecting electrodes 17 connect the semiconductor die 20 to the semiconductor dies 25 and 26, which will be described later. The connecting electrodes 17 are each connected to the terminal electrodes 22 of the semiconductor die 20. Each connecting electrode 16 and each connecting electrode 17 is composed of, for example, a copper pillar. A known method can be used to manufacture each connecting electrode 16 and each connecting electrode 17.

[0059] Next, once the wiring layer 15 is formed, semiconductor dies 25 and 26 are mounted on the wiring layer 15, as shown in Figure 3(b). The semiconductor dies 25 and 26 are, for example, semiconductor chips such as LSI chips, CMOS sensors, and memory chips. During this mounting, the connecting electrode 16 is connected to the semiconductor dies 25 and 26, and the connecting electrode 17 connects the semiconductor die 20 to the semiconductor dies 25 and 26.

[0060] Next, when the semiconductor dies 25 and 26 are mounted, as shown in Figure 4(a), the semiconductor dies 25 and 26 are sealed on the wiring layer 15 with a sealing material to form a sealing material layer 18 on the wiring layer 15. The sealing material layer 18, like the sealing material layer 14, is composed of a thermosetting resin such as epoxy resin, and is cured after sealing is performed.

[0061] Next, once the semiconductor dies 25 and 26 are sealed with the sealing material to form the sealing layer 18, the surface of the semiconductor dies 25 and 26 may be ground until it is exposed from the surface of the sealing layer, as shown in Figure 4(b). This thins the sealing layer 18 to the sealing layer 18a shown in Figure 4(b).

[0062] Next, once the sealing layer 18a is formed, as shown in Figure 5(a), the temporary fixing layer 11 is subjected to laser irradiation or heat treatment to reduce its adhesion and peel the carrier substrate 10 from the wiring layer 12.

[0063] Next, when the carrier substrate 10 is peeled off, a connection bump 19 is formed on the lower end of the connection electrode 13 exposed from the lower surface of the wiring layer 12, as shown in Figure 5(b). A substrate 35 is also prepared as shown in Figure 5(c). The substrate 35 is provided with a substrate body 36, a connection bump 37 for connecting the wiring electrode inside the substrate body 36 to the outside, an adhesive member 38, and other members 39 (for example, various electronic components).

[0064] Next, as shown in Figure 5(c), the semiconductor device 30, which is provided with the connecting bumps 19, is mounted on the substrate 35. At this time, the semiconductor device 30 is bonded and fixed by an adhesive member 38 on the substrate 35. Subsequently, the semiconductor device 1 shown in Figure 1 is manufactured by curing this adhesive member 38 by heat curing or the like.

[0065] Next, with reference to Figure 7, an example of a method for manufacturing the semiconductor die 20 used in the manufacturing of the semiconductor device 1 described above will be explained.

[0066] First, as shown in Figure 7(a), semiconductor wafers 41 corresponding to each semiconductor substrate 21 of a plurality of semiconductor dies 20 are prepared. The semiconductor wafer 41 has a plurality of electrodes 42 corresponding to each semiconductor die 20. Once the semiconductor wafer 41 is prepared, as shown in Figure 7(b), a wafer resin layer 43 containing a curable resin composition is formed on the upper surface 41a (first surface) of the semiconductor wafer 41 so as to cover the plurality of electrodes 42. The wafer resin layer 43 corresponds to the resin layer 23 (before curing) described above, and is formed by attaching a resin film containing the same thermosetting resin composition to the semiconductor wafer 41. Alternatively, it may be formed by applying a liquid adhesive containing the same thermosetting resin composition to the semiconductor wafer 41. Then, as shown in Figure 7(c), the wafer resin layer 43 is cured by heat or the like to become a cured wafer resin layer 43a.

[0067] Next, as shown in Figure 7(d), a DAF corresponding to the adhesive member 44 described above is attached to the lower surface 41b (second surface) of the semiconductor wafer 41. Then, as shown in Figure 7(e), the semiconductor wafer 41 including the cured wafer resin layer 43a is diced D to obtain multiple semiconductor dies 20. Such semiconductor dies 20 can be used as bridge dies when manufacturing various semiconductor devices. The semiconductor device shown in Figure 1 is an example using semiconductor dies 20, and is not limited thereto.

[0068] Here, the manufacturing method of the semiconductor device according to this embodiment, and more specifically the effects of the method for mounting the semiconductor die 20, will be explained in comparison with the method shown in Figure 9. In the method shown in Figure 9, since the resin layer 23 is not provided as in the method according to this embodiment, a plurality of terminal electrodes 122 (copper pillars) on the semiconductor substrate 121 are exposed. For this reason, as shown in Figure 9(a), suction is performed using a collet C1 with a protruding outer circumference (concave in the center) that avoids the terminal electrodes 122. As semiconductor dies are becoming thinner, when such suction is performed, the outer circumference of the semiconductor die 120 is strongly attracted, which can cause the semiconductor die 120 to bend. In particular, when obtaining multiple semiconductor dies 120 by framing a semiconductor wafer, the semiconductor die 120 is pushed up from the back side with a pin P or the like when peeling it off the dicing tape, which can accelerate the bending of the semiconductor die 120, or in some cases, cause the semiconductor die 120 to crack. Furthermore, as shown in Figure 9(b), when the semiconductor die 120 is mounted on the support 110 and pressed after suction, the load is applied only to the outer periphery (see the two arrows in the figure), making it difficult to apply the load to the central part of the back surface of the semiconductor die 120. This can result in insufficient pressing or the formation of a void in the central part.

[0069] In contrast, in the semiconductor device manufacturing method according to this embodiment, as shown in Figure 6, when mounting the semiconductor die 20, a hardened resin layer 23 is provided on the upper surface 21a of the semiconductor substrate 21 so as to cover the multiple terminal electrodes 22. Then, the surface 23a of this hardened resin layer 23 is attracted by a collet C and lifted up, and the subsequent mounting is performed. In this way, since the multiple terminal electrodes 22 are covered by the resin layer 23, the semiconductor die 20 can be attracted and lifted by the collet C, which is a holding member, without avoiding the terminal electrodes 22, so that bending or cracking of the semiconductor die can be suppressed. Also, since the multiple terminal electrodes 22 are covered by the resin layer 23, when attaching the semiconductor die 20 to a support such as a wiring layer 12, the load can be applied to the entire semiconductor die 20 in the planar direction, and the semiconductor die 20 can be reliably attached to the support. As described above, this semiconductor device manufacturing method makes it possible to reliably mount the semiconductor die 20. Furthermore, in this semiconductor device manufacturing method, since the part that covers the terminal electrodes 22 is formed from a hardened resin layer 23, it is easy to manufacture.

[0070] In the semiconductor device manufacturing method according to this embodiment, when preparing the semiconductor die 20, a resin layer containing a curable resin composition is formed on the upper surface 21a of the semiconductor substrate 21 so as to cover a plurality of terminal electrodes 22, and this resin layer is cured to become a cured resin layer. This makes it possible to easily form a resin layer 23 that protects the plurality of terminal electrodes 22.

[0071] In the semiconductor device manufacturing method according to this embodiment, the cured resin layer 23 is formed by curing a resin film (e.g., DAF) containing a curable resin composition after it has been attached to the upper surface 21a of the semiconductor substrate 21. This makes it easy to form a resin layer 23 that protects multiple terminal electrodes 22. Alternatively, the cured resin layer 23 may be formed by curing a liquid adhesive containing a curable resin composition after it has been applied to the upper surface 21a of the semiconductor substrate 21. In this case as well, it is easy to form a resin layer 23 that protects multiple terminal electrodes 22.

[0072] In the semiconductor device manufacturing method according to this embodiment, it is preferable that the cured resin layer 23 contains an inorganic filler. In this case, the hardness (elastic modulus, etc.) of the resin layer 23 can be improved, and bending and cracking of the semiconductor die 20 can be further suppressed. Furthermore, the inclusion of an inorganic filler can also suppress warping of the semiconductor die 20 including the resin layer 23. Moreover, the inclusion of an inorganic filler makes it easier to perform the polishing process when polishing the resin layer 23.

[0073] In the semiconductor device manufacturing method according to this embodiment, the inorganic filler content in the cured resin layer 23 may be 10% by mass or more based on the total amount of solids contained in the resin layer before curing. In this case, warping of the semiconductor die 20 can be suppressed more reliably.

[0074] In the semiconductor device manufacturing method according to this embodiment, it is preferable that the average particle size of the inorganic filler in the cured resin layer 23 is 20 μm or less. In this case, even if the terminal electrodes 22 and pitch of the semiconductor die 20 are miniaturized, the resin and filler can be reliably filled between each terminal electrode, and the terminal electrodes can be reliably covered with the resin layer.

[0075] In the semiconductor device manufacturing method according to this embodiment, the elastic modulus of the cured resin layer 23 may be 10 MPa or higher. In this case, bending and cracking of the semiconductor die 20 can be further suppressed. Also, when polishing the cured resin layer 23 to expose the terminal electrodes 22, the polishing work can be easily performed. Furthermore, because the elastic modulus of the cured resin layer 23 is high, the resin layer, copper pattern, etc., can be easily polished.

[0076] In the semiconductor device manufacturing method according to this embodiment, when preparing the semiconductor die 20, a semiconductor wafer 41 corresponding to a plurality of semiconductor substrates 21 is prepared, and then a wafer resin layer 43 containing a curable resin composition is formed on the upper surface 41a of the semiconductor wafer 41 so as to cover a plurality of electrodes 42. Then, this wafer resin layer 43 is cured. After that, the semiconductor wafer 41 is divided into individual pieces by dicing D to obtain a plurality of semiconductor dies 20. With this method, a plurality of semiconductor dies 20 can be manufactured at once. Furthermore, with this manufacturing method, even when divided into individual pieces by dicing, the semiconductor die 20 can be peeled off the dicing tape without bending or cracking.

[0077] In the semiconductor device manufacturing method according to this embodiment, after the semiconductor die 20 is attached to the wiring layer 12 which is a support, the semiconductor die 20 may be sealed with a sealing material to form sealing material layers 14 and 14a on the wiring layer 12. Preferably, the average particle size of the inorganic filler contained in the sealing material layers 14 and 14a is larger than the average particle size of the inorganic filler contained in the resin layer 23. By including larger inorganic fillers in the sealing material in this way, thermal warping of the sealing material layer 14 can be suppressed more reliably. In particular, in large-format processes, reliable adsorption becomes possible in high-precision processing in subsequent processes.

[0078] In the semiconductor device manufacturing method according to this embodiment, it is preferable that the difference between the linear expansion coefficients of the sealing material layers 14 and 14a and the linear expansion coefficient of the cured resin layer 23 is within 150 ppm / K. In this case, the behavior of the sealing material layer 14a and the resin layer 23 when heat is applied to the manufactured semiconductor device 1 becomes uniform, and thermal problems such as displacement during expansion can be reduced.

[0079] In the semiconductor device manufacturing method according to this embodiment, the resin layer 23, which has been cured together with the sealing material layer 14a, may be polished so that the tip 22a of each of the multiple terminal electrodes 22 is exposed from the cured resin layer 23. This makes it possible to accurately form fine wiring layers 15, etc., on the surface of the polished sealing material layer 14, etc.

[0080] In the semiconductor device manufacturing method according to this embodiment, the thickness of the cured resin layer 23 may be 15 μm or more or 30 μm or more when lifting or attaching the semiconductor die 20 with the collet C. In this case, bending and cracking of the semiconductor die 20 can be suppressed more reliably.

[0081] In the semiconductor device manufacturing method according to this embodiment, an adhesive member 24 is provided on the lower surface 21b of the semiconductor substrate 21 for attaching the semiconductor die 20 to a support such as a wiring layer 12. This ensures that the semiconductor die 20 is securely attached to the wiring layer 12.

[0082] In the semiconductor device manufacturing method according to this embodiment, the difference between the coefficient of thermal expansion of the cured resin layer 23 and the coefficient of thermal expansion of the adhesive member 24 may be within 150 ppm / K. In this case, the thermal expansion of the cured resin layer and the adhesive member sandwiching the semiconductor substrate becomes approximately the same, which prevents damage to the position or parallelism of the semiconductor substrate and suppresses warping of the mounted chip.

[0083] In the semiconductor device manufacturing method according to this embodiment, the thickness of the cured resin layer 23 may be between 50% and 150% of the height of the terminal electrode 22, or between 80% and 120%. In this case, since the thickness of the resin layer 23 and the height of the terminal electrode 22 are approximately equal, it becomes possible to lift and attach the semiconductor die 3 more reliably.

[0084] In the semiconductor device manufacturing method according to this embodiment, it is preferable that the adhesive member 44 is the same material as the resin layer 23 before curing. In this case, the members arranged above and below the semiconductor substrate 21 are of the same type (for example, both are DAF), so they behave similarly even when heat is applied, and problems due to differences in behavior can be reduced.

[0085] In the semiconductor device manufacturing method according to this embodiment, when lifting the semiconductor die 20 with the collet C, the collet C adheres to the entire surface 23a of the hardened resin layer 23 to lift it, and when attaching the semiconductor die 20, a load is applied to the entire surface 23a of the hardened resin layer 23 by the collet C to attach it. As a result, bending or cracking of the semiconductor die 20 can be more reliably suppressed, and the semiconductor die 20 can be reliably attached to a support such as the wiring layer 12.

[0086] In the semiconductor device manufacturing method according to this embodiment, the ionic impurity concentration of the cured resin layer 23 is 5 ppm or less (or 3 ppm or less). This prevents migration between the multiple terminal electrodes 22 covered by the cured resin layer 23.

[0087] In the semiconductor device manufacturing method according to this embodiment, the adhesive strength between the cured resin layer 23 and the upper surface 21a of the semiconductor substrate 21 is 1 MPa or more. This prevents the resin layer 23 of the semiconductor die 20 from peeling off in the manufactured semiconductor device 1.

[0088] Although embodiments of the present disclosure have been described above, the present invention is not limited to the embodiments described above, and modifications may be made as appropriate without departing from the spirit of the invention. For example, in the embodiments described above, the semiconductor die 20 used was equipped with an adhesive member 24 as shown in Figure 6, but is not limited thereto. For example, as shown in Figure 8, a semiconductor die 20A without an adhesive member 24 may be used. In this case, when mounting the semiconductor die 20A to the wiring layer 12, solder may be provided on the wiring layer 12 and a metal layer may be provided on the back surface of the semiconductor die 20 to join them. Alternatively, the semiconductor die 20A may be attached to the wiring layer 12 using silver paste. Furthermore, in the embodiments described above, an example was shown in which the semiconductor die 20 is attached to the wiring layer 12, but is not limited thereto. For example, the semiconductor die 20, 20A may be directly attached to the temporary fixing layer 11 without providing the wiring layer 12. In this case, if the temporary fixing layer 11 is adhesive, the semiconductor die 20A may be attached as is, or if it is not adhesive, the semiconductor die 20 may be attached. [Explanation of symbols]

[0089] 1...Semiconductor device, 3...Semiconductor die (semiconductor component), 3a...Semiconductor substrate, 3b...Terminal electrode, 3c...Resin layer, 5a...Wiring layer (support), 12...Wiring layer (support), 14,14a...Sealing material layer, 20,20A...Semiconductor die (semiconductor component), 21...Semiconductor substrate, 21a...Top surface (first surface), 21b...Bottom surface (second surface), 22...Terminal electrode, 22a...Tip, 23...Resin layer, 24...Adhesive member, 41...Semiconductor wafer, 41a...Top surface (first surface), 41b...Bottom surface (second surface), 42...Electrode, 43,43a...Wafer resin layer, 44...Adhesive member.

Claims

1. A step of preparing a semiconductor member comprising a semiconductor substrate, a plurality of terminal electrodes provided on the first surface of the semiconductor substrate, and a resin layer covering the plurality of terminal electrodes, wherein the resin layer is cured. A step of attaching the semiconductor member to a support by adsorbing the surface of the cured resin layer of the semiconductor member with a holding member, The steps include: sealing the semiconductor member with a sealing material to form a sealing layer; The process includes a step of mounting a first semiconductor die and a second semiconductor die, A method for manufacturing a semiconductor device, wherein the first semiconductor die and the second semiconductor die are connected to each other by the semiconductor material.

2. The difference between the linear expansion coefficient of the cured resin layer and the linear expansion coefficient of the sealing material layer is within 150 ppm / K. A method for manufacturing a semiconductor device according to claim 1.

3. The average particle size of the inorganic filler contained in the cured resin layer is smaller than the average particle diameter of the inorganic filler contained in the sealing material layer. A method for manufacturing a semiconductor device according to claim 1.

4. The concentration of ionic impurities in the cured resin layer is 5 ppm or less. A method for manufacturing a semiconductor device according to any one of claims 1 to 3.

5. The semiconductor member further includes an adhesive member provided on a second surface of the semiconductor substrate opposite to the first surface, When attaching the semiconductor member to the support, attach the adhesive member to the support. A method for manufacturing a semiconductor device according to any one of claims 1 to 3.

6. The difference between the coefficient of linear expansion of the cured resin layer and the coefficient of linear expansion of the adhesive member is within 150 ppm / K. The method for manufacturing a semiconductor device according to claim 5.

7. The adhesive strength between the cured resin layer and the first surface of the semiconductor substrate is 1 MPa or more. A method for manufacturing a semiconductor device according to any one of claims 1 to 3.

8. The elastic modulus of the cured resin layer at room temperature is 10 MPa or more. A method for manufacturing a semiconductor device according to any one of claims 1 to 3.

9. The coefficient of linear expansion of the cured resin layer is 10 ppm / K to 200 ppm / K. A method for manufacturing a semiconductor device according to any one of claims 1 to 3.

10. A step of preparing a semiconductor member comprising a semiconductor substrate, a plurality of terminal electrodes provided on the first surface of the semiconductor substrate, and a resin layer covering the plurality of terminal electrodes, wherein the resin layer is cured. A step of attaching the semiconductor member to a support by adsorbing the surface of the cured resin layer of the semiconductor member with a holding member, The steps include: sealing the semiconductor member with a sealing material to form a sealing layer; The process includes a step of mounting a first semiconductor die and a second semiconductor die, A curable resin composition used in the cured resin layer in a method for manufacturing a semiconductor device, wherein the first semiconductor die and the second semiconductor die are connected to each other by the semiconductor member.

11. The curable resin composition has a coefficient of linear expansion such that, upon curing, the difference between it and the coefficient of linear expansion of the sealing layer is within 150 ppm / K. The curable resin composition according to claim 10.

12. The inorganic filler contained in the curable resin composition has an average particle size smaller than the average particle size of the inorganic filler contained in the sealing layer. The curable resin composition according to claim 10.

13. The concentration of ionic impurities in the curable resin composition is 5 ppm or less. A curable resin composition according to any one of claims 10 to 12.

14. The semiconductor member further includes an adhesive member for attachment to the support, which is provided on a second surface of the semiconductor substrate opposite to the first surface. The curable resin composition has a coefficient of linear expansion such that, upon curing, the difference between it and the coefficient of linear expansion of the adhesive member is within 150 ppm / K. A curable resin composition according to any one of claims 10 to 12.

15. The curable resin composition, when cured, has an adhesive strength of 1 MPa or more between it and the first surface of the semiconductor substrate. A curable resin composition according to any one of claims 10 to 12.

16. The curable resin composition, when cured, has an elastic modulus of 10 MPa or more at room temperature. A curable resin composition according to any one of claims 10 to 12.

17. The curable resin composition, when cured, has a coefficient of linear expansion of 10 ppm / K to 200 ppm / K. A curable resin composition according to any one of claims 10 to 12.

18. The curable resin composition is a resin film. A curable resin composition according to any one of claims 10 to 12.

19. The curable resin composition is a liquid adhesive. A curable resin composition according to any one of claims 10 to 12.

20. A semiconductor member comprising a semiconductor substrate, a plurality of terminal electrodes provided on a first surface of the semiconductor substrate, and a cured resin layer provided on the first surface so as to cover the plurality of terminal electrodes, A support on which the semiconductor member is attached, A sealing material layer for sealing the semiconductor component, The semiconductor substrate comprises a first semiconductor die and a second semiconductor die provided on the first surface side of the semiconductor substrate, A semiconductor device in which the first semiconductor die and the second semiconductor die are connected to each other by the aforementioned semiconductor material.

21. The plurality of terminal electrodes are covered by the resin layer such that the tip of each of the plurality of terminal electrodes is exposed from the surface of the resin layer, The semiconductor device according to claim 20.

22. A curable resin composition used for forming the cured resin layer in the semiconductor device according to claim 20 or 21.

23. The curable resin composition has a coefficient of linear expansion such that, upon curing, the difference between it and the coefficient of linear expansion of the sealing layer is within 150 ppm / K. The curable resin composition according to claim 22.

24. The inorganic filler contained in the curable resin composition has an average particle size smaller than the average particle size of the inorganic filler contained in the sealing layer. The curable resin composition according to claim 22.

25. The concentration of ionic impurities in the curable resin composition is 5 ppm or less. The curable resin composition according to claim 22.

26. The curable resin composition, when cured, has an elastic modulus of 10 MPa or more at room temperature. The curable resin composition according to claim 22.

27. The curable resin composition, when cured, has a coefficient of linear expansion of 10 ppm / K to 200 ppm / K. The curable resin composition according to claim 22.

28. The curable resin composition is a resin film. The curable resin composition according to claim 22.

29. The curable resin composition is a liquid adhesive. The curable resin composition according to claim 22.

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