Power conversion device
Patent Information
- Application Number
- JP2025551472
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Filing Date
- 2026-03-27
- Publication Date
- 2026-06-26
AI Technical Summary
Existing power conversion devices face challenges in reducing size while maintaining effective heat dissipation.
The power conversion device incorporates a cooling body with a groove for the core, a first substrate with a metal base and conductor pattern, and a second substrate with a conductor pattern contacting the core, along with a connection member and circuit components, to enhance heat dissipation and reduce size.
This configuration allows for efficient heat dissipation, reducing the need for larger components and enabling a more compact power conversion device.
Abstract
Description
Power Conversion Device
[0001] The present disclosure relates to a power conversion device.
[0002] For example, Japanese Patent Laid-Open Publication No. 2013-172520 (Patent Document 1) describes a power conversion device. The power conversion device described in Patent Document 1 has a metal base substrate, a semiconductor element, a transformer, a reactor, and electronic components for a control circuit. The semiconductor element, transformer, reactor, and electronic components are mounted on the metal base substrate. This improves the heat dissipation performance of the power conversion device described in Patent Document 1.
[0003] JP 2013-172520 A
[0004] In the power converter described in Patent Document 1, semiconductor elements, a transformer, a reactor, and electronic components are mounted on a metal base substrate, which increases the mounting area and makes the power converter larger.
[0005] The present disclosure has been made in view of the above-described problems of the conventional technology. More specifically, the present disclosure provides a power conversion device that can be miniaturized while improving heat dissipation.
[0006] The power conversion device of the present disclosure includes a cooling body, a core, a first substrate, a second substrate, a third substrate, a connecting member, a plurality of first circuit components, and a plurality of second circuit components. The cooling body has a first main surface and a second main surface opposite the first main surface. A groove recessed toward the second main surface is formed in the first main surface. The core is at least partially disposed in the groove. The first substrate has a metal base, an insulating layer, and a first conductor pattern. The insulating layer is disposed on the metal base. The first conductor pattern is disposed on the insulating layer. A slit is formed in the first substrate penetrating the first substrate. The first substrate is disposed on the cooling body such that the metal base is in contact with the first main surface and the core passes through the slit. The second substrate has a substrate, a second conductor pattern, and a third conductor pattern. The substrate has a third main surface and a fourth main surface opposite the third main surface. The second conductor pattern and the third conductor pattern are arranged on the third main surface and the fourth main surface, respectively. The second substrate is arranged at a distance from the first substrate so that the third conductor pattern contacts the core. The third substrate has a winding wound around the core and is arranged between the first substrate and the second substrate. A connecting member connects the first substrate and the second substrate. A plurality of first circuit components are electrically connected to the first conductor pattern. A plurality of second circuit components are electrically connected to either the second conductor pattern or the third conductor pattern.
[0007] According to the power conversion device of the present disclosure, it is possible to reduce the size while improving heat dissipation.
[0008] 1 is a circuit diagram of a power conversion device 100A. FIG. 2 is an exploded perspective view of the power conversion device 100A. FIG. 3 is a cross-sectional view of the power conversion device 100A. FIG. 4 is a cross-sectional view showing a first combination example of a plurality of power conversion devices 100A. FIG. 5 is a cross-sectional view showing a second combination example of a plurality of power conversion devices 100A. FIG. 6 is a cross-sectional view of a power conversion device 100B. FIG. 7 is a cross-sectional view of a power conversion device 100C. FIG. 8 is a cross-sectional view of a power conversion device 100D. FIG. 9 is a cross-sectional view of a power conversion device 100E. FIG. 100F. FIG. 11 is a cross-sectional view of a power conversion device 100G. FIG. 12 is a plan view of a power conversion device 100G. FIG. 13 is a cross-sectional view of a power conversion device 100H. FIG. 14 is a cross-sectional view of a power conversion device 100I. FIG. 15 is a plan view of a power conversion device 100I.
[0009] The details of the embodiments of the present disclosure will be described with reference to the drawings. In the following drawings, the same or corresponding parts are designated by the same reference numerals, and redundant explanations will not be repeated. Note that the configurations described in the following embodiments can be combined as necessary.
[0010] First Embodiment A power conversion device according to a first embodiment will be described below. The power conversion device according to the first embodiment is designated as a power conversion device 100A.
[0011] (Configuration of Power Conversion Device 100A) The configuration of the power conversion device 100A will be described below.
[0012] Fig. 1 is a circuit diagram of a power conversion device 100A. As shown in Fig. 1, the power conversion device 100A has an inverter circuit unit 10, a rectifier circuit unit 11, a smoothing circuit unit 12, a transformer unit 13, and a control circuit unit 14. The inverter circuit unit 10, the rectifier circuit unit 11, and the smoothing circuit unit 12 form a main circuit unit of the power conversion device 100A. The power conversion device 100A constitutes, for example, a direct current-direct current conversion circuit (DC-DC converter).
[0013] The inverter circuit 10 includes a plurality of switching elements 10a and an input capacitor 10b. In the example shown in Fig. 1, the number of switching elements 10a is four. These four switching elements 10a are referred to as transistors 10aa, 10ab, 10ac, and 10ad, respectively.
[0014] The transistors 10aa and 10ab are connected in series. More specifically, the source of the transistor 10aa and the drain of the transistor 10ab are connected to each other. The transistors 10ac and 10ad are connected in series. More specifically, the source of the transistor 10ac and the drain of the transistor 10ad are connected to each other. The drains of the transistors 10aa and 10ac are connected to the input terminal 10c. The sources of the transistors 10ab and 10ad are connected to the input terminal 10d. The input capacitor 10b is connected to the input terminals 10c and 10d.
[0015] The transistor 10aa, the transistor 10ab, the transistor 10ac, and the transistor 10ad are power semiconductor elements such as a metal oxide semiconductor field effect transistor (MOSFET), an insulated gate bipolar transistor (IGBT), or a gallium nitride high electron transistor (GaN HEMT).
[0016] The rectifier circuit unit 11 has a plurality of rectifier elements 11a. In the example shown in FIG. 1 , the number of rectifier elements 11a is four. These four rectifier elements 11a are referred to as diode 11aa, diode 11ab, diode 11ac, and diode 11ad, respectively. Diodes 11aa and 11ab are connected in series. More specifically, the anode of diode 11aa and the cathode of diode 11ab are connected to each other. Diodes 11ac and 11ad are connected in series. More specifically, the anode of diode 11ac and the cathode of diode 11ad are connected to each other.
[0017] The rectifying element 11a may be a power semiconductor element other than a diode, such as a MOSFET, a GaN HEMT, or a thyristor.
[0018] The smoothing circuit unit 12 is connected in parallel to the rectifier circuit unit 11. The smoothing circuit unit 12 has a smoothing reactor 12a and a smoothing capacitor 12b. The smoothing reactor 12a and the smoothing capacitor 12b are connected in series.
[0019] One end of the smoothing reactor 12a is connected to the cathode of the diode 11aa and the cathode of the diode 11ac. The other end of the smoothing reactor 12a is connected to one end of the smoothing capacitor 12b. The other end of the smoothing capacitor 12b is connected to the anode of the diode 11ab and the anode of the diode 11ad. The output terminal 12c is connected to the other end of the smoothing reactor 12a and one end of the smoothing capacitor 12b. The output terminal 12d is connected to the other end of the smoothing capacitor 12b, the anode of the diode 11ab, and the anode of the diode 11ad.
[0020] The transformer unit 13 is a transformer composed of a winding 13a, a winding 13b, and a core 13c. The winding 13a and the winding 13b are primary and secondary windings, respectively. One end of the winding 13a is connected to the source of the transistor 10aa and the drain of the transistor 10ab. The other end of the winding 13a is connected to the source of the transistor 10ac and the drain of the transistor 10ad. One end of the winding 13b is connected to the anode of the diode 11aa and the cathode of the diode 11ab. The other end of the winding 13b is connected to the anode of the diode 11ac and the cathode of the diode 11ad. The inverter circuit unit 10 and the rectifier circuit unit 11 are electrically insulated from each other by the transformer constituting the transformer unit 13.
[0021] The control circuit 14 includes a detector 14a and a controller 14b. The detector 14a detects, for example, the current flowing between the input terminals 10c and 10d, the voltage between the input terminals 10c and 10d, the current flowing between the output terminals 12c and 12d, and the voltage between the output terminals 12c and 12d. The detector 14a detects, for example, the temperatures of the inverter circuit 10, the rectifier circuit 11, the smoothing circuit 12, and the circuit components that constitute them.
[0022] Based on the detection result by the detection unit 14a, the control unit 14b controls the inverter circuit unit 10. More specifically, the control unit 14b outputs control signals to the gates of the transistors 10aa, 10ab, 10ac, and 10ad, thereby switching the transistors 10aa, 10ab, 10ac, and 10ad on and off.
[0023] In the inverter circuit unit 10, the transistors 10aa, 10ab, 10ac, and 10ad are switched on and off to convert the DC voltage applied between the input terminals 10c and 10d into an AC voltage. In the transformer unit 13, the AC voltage converted in the inverter circuit unit 10 is converted into an AC voltage having a desired voltage. The AC voltage obtained by the conversion in the transformer unit 13 is determined by the turn ratio between the windings 13a and 13b. The AC voltage converted in the transformer unit 13 is converted back into a DC voltage in the rectifier circuit unit 11. The DC voltage converted in the rectifier circuit unit 11 is smoothed by the smoothing reactor 12a and smoothing capacitor 12b in the smoothing circuit unit 12 and is output from the output terminals 12c and 12d.
[0024] Fig. 2 is an exploded perspective view of the power conversion device 100A. Fig. 3 is a cross-sectional view of the power conversion device 100A. Fig. 3 shows a cross-section of the power conversion device 100A perpendicular to the second direction DR2. As shown in Figs. 2 and 3, the power conversion device 100A further includes a cooling body 20, a first substrate 30, a second substrate 40, and a third substrate 50.
[0025] The cooling body 20 has a main surface 20a and a main surface 20b. The main surface 20b is the surface opposite to the main surface 20a. Viewing the power conversion device 100A along the normal direction of the main surface 20a is referred to as a plan view. In the plan view, the longitudinal direction of the cooling body 20 is along the first direction DR1. The direction perpendicular to the first direction DR1 in the plan view is referred to as the second direction DR2. In the plan view, the cooling body 20 has a rectangular (oblong) shape with sides along the first direction DR1 and sides along the second direction DR2. The direction perpendicular to the first direction DR1 and the second direction DR2 is referred to as the third direction DR3. The third direction DR3 is along the normal direction of the main surface 20a. The main surfaces 20a and 20b are both end surfaces of the cooling body 20 in the third direction DR3.
[0026] A groove 20c is formed in the main surface 20a. The main surface 20a is recessed toward the main surface 20b at the groove 20c. The groove 20c has, for example, a rectangular (oblong) shape in a plan view. The longitudinal direction of the groove 20c in a plan view is along the second direction DR2. At least a portion of the core 13c is disposed in the groove 20c. The core 13c is divided into, for example, a first portion 13ca and a second portion 13cb. The first portion 13ca and the second portion 13cb are assembled to form one or more closed magnetic circuits. The first portion 13ca and the second portion 13cb are fixed to each other with an adhesive or insulating tape. The core 13c is disposed in the groove 20c.
[0027] The first portion 13ca and the second portion 13cb are, for example, an E-shaped core and an I-shaped core, respectively. However, the shape of the core 13c is not limited to this. The core 13c is not particularly limited as long as it is an appropriate combination of, for example, an E-shaped core, a T-shaped core, a U-shaped core, a cylindrical core, or the like to form one or more loop-shaped closed magnetic circuits. The core 13c is, for example, a ferrite core such as a manganese-zinc ferrite core or a nickel-zinc ferrite core. The core 13c may also be an amorphous core or an iron dust core.
[0028] The cooling body 20 is made of a material with high thermal conductivity. The cooling body 20 is made of a metal material or a resin material with high thermal conductivity. Specific examples of metal materials that make up the cooling body 20 include copper, copper alloys, aluminum, aluminum alloys, iron, and iron alloys. The thermal conductivity of the cooling body 20's material is, for example, 1.0 W / (m·K) or more. The thermal conductivity of the cooling body 20's material is preferably 10 W / (m·K) or more. The thermal conductivity of the cooling body 20's material is more preferably 100 W / (m·K) or more.
[0029] Although not shown, the cooling body 20 may be electrically connected to another member so as to have the same potential as the ground potential. Although not shown, a thermally conductive member may be interposed between the bottom surface of the groove 20c and the core 13c (first portion 13ca). The thermal conductivity of the thermally conductive member is, for example, 0.1 W / (m·K) or more, preferably 1 W / (m·K) or more, and more preferably 10 W / (m·K) or more. Examples of the thermally conductive member that can be used include thermally conductive grease, a thermally conductive sheet, and a thermally conductive adhesive.
[0030] Although not shown, core 13c may be adhered to the bottom surface of groove 20c using an adhesive. Cooling body 20 may form part of the housing of transformer unit 13, or may form part of the housing of power conversion device 100A. Cooling body 20 may be air-cooled or water-cooled on surfaces other than the surfaces facing first portion 34 and second portion 35 (described later).
[0031] The first substrate 30 is a metal-based substrate. In a plan view, the first substrate 30 has a rectangular (rectangular) shape with its longitudinal direction aligned with the first direction DR1. The first substrate 30 includes a metal base 31, an insulating layer 32, and a conductor pattern 33. The metal base 31 is a plate-shaped member made of a metal material. Specific examples of materials for the metal base 31 include copper, copper alloys, aluminum, aluminum alloys, iron, and iron alloys. The thermal conductivity of the material for the metal base 31 is, for example, 1.0 W / (m·K) or more. The thermal conductivity of the material for the metal base 31 is preferably 10 W / (m·K) or more. It is even more preferable that the thermal conductivity of the material for the metal base 31 be 100 W / (m·K) or more.
[0032] The insulating layer 32 is disposed on the metal base 31. The insulating layer 32 is formed of an electrically insulating material. Specific examples of materials for the insulating layer 32 include epoxy resin, glass fiber reinforced epoxy resin, and polyimide resin. The resin material contained in the material for the insulating layer 32 may contain a thermally conductive filler to improve the thermal conductivity of the insulating layer 32. The thickness of the insulating layer 32 is preferably small as long as it does not affect the electrical insulation or manufacturing. The thickness of the insulating layer 32 is preferably 1 μm or more and 2000 μm or less, and more preferably 1 μm or more and 150 μm or less.
[0033] The conductor pattern 33 is disposed on the insulating layer 32. The conductor pattern 33 is formed of a conductor. Specific examples of materials that can be used for the conductor pattern 33 include metal materials such as copper, copper alloy, nickel, nickel alloy, gold, gold alloy, aluminum, aluminum alloy, silver, silver alloy, tin, and tin alloy. The thickness of the conductor pattern 33 is, for example, 1 μm or more and 2000 μm or less.
[0034] A slit 30a is formed in the first substrate 30. The slit 30a penetrates the first substrate 30 along the third direction DR3. The first substrate 30 is placed on the cooling body 20 so that the metal base 31 is in contact with the cooling body 20 (main surface 20a). With the first substrate 30 placed on the cooling body 20, the core 13c passes through the slit 30a. The slit 30a divides the metal base 31 around the slit 30a. Therefore, the metal base 31 around the slit 30a does not form a winding for the core 13c.
[0035] The portion of the first substrate 30 on one side of the slit 30a in the first direction DR1 (the left side in FIG. 3 ) may be referred to as the first portion 34. The portion of the first substrate 30 on the other side of the slit 30a in the first direction DR1 (the right side in FIG. 3 ) may be referred to as the second portion 35. The first portion 34 and the second portion 35 may or may not be separated by the slit 30a. The metal base 31 in the first portion 34 and the metal base 31 in the second portion 35 may be in contact with the core 13c.
[0036] A plurality of first circuit components 36 are electrically connected to the conductor pattern 33 to form a main circuit of the power conversion device 100A. The first circuit components 36 connected to the conductor pattern 33 in the first portion 34 form a primary-side circuit of the main circuit of the power conversion device 100A. That is, the first circuit components 36 connected to the conductor pattern 33 in the first portion 34 are the switching element 10a and the input capacitor 10b. The first circuit components 36 connected to the conductor pattern 33 in the second portion 35 form a secondary-side circuit of the main circuit of the power conversion device 100A. That is, the first circuit components 36 connected to the conductor pattern 33 in the second portion 35 are the rectifying element 11a, the smoothing reactor 12a, and the smoothing capacitor 12b.
[0037] The second substrate 40 has a base material 41. The base material 41 has, for example, a rectangular (oblong) shape in a plan view with its longitudinal direction aligned with the first direction DR1. The base material 41 has a main surface 41a and a main surface 41b. The main surface 41b is the surface opposite the main surface 41a. The main surface 41a and the main surface 41b are both end surfaces of the base material 41 in the third direction DR3.
[0038] The second substrate 40 further includes a conductor pattern 42 and a conductor pattern 43. The conductor pattern 42 and the conductor pattern 43 are disposed on the main surface 41a and the main surface 41b, respectively. The second substrate 40 is disposed at a distance from the first substrate 30 in the third direction DR3 so that the conductor pattern 43 contacts the core 13c (second portion 13cb). The portion of the conductor pattern 43 that contacts the core 13c may be referred to as a shield 43a. The shield 43a may be connected to the reference potential of the control circuit unit 14 or may not be connected to any potential. The shield 43a may be connected to the cooling body 20 by a support 61, which will be described later.
[0039] A protective film may be provided on the surface of the conductor pattern 43 so as to cover at least a portion of the surface of the conductor pattern 43. That is, the second substrate 40 may be disposed so that the conductor pattern 43 is in thermal contact with the core 13c via the protective film. The protective film may be, for example, a resist or silk formed from a resin.
[0040] Each of the plurality of second circuit components 44 is electrically connected to either the conductor pattern 42 or the conductor pattern 43 to form the control circuit unit 14. The number of second circuit components 44 is greater than the number of first circuit components 36. On the other hand, the amount of heat generated in the second substrate 40 is smaller than the amount of heat generated in the first substrate 30. The second substrate 40 is, for example, a general-purpose printed circuit board. The second substrate 40 may have a wiring layer built into the base material 41. The second substrate 40 may also be a ceramic substrate in which the base material 41 is formed of ceramic such as aluminum oxide, aluminum nitride, or silicon carbide.
[0041] The thickness of the shield 43a (conductor pattern 43) is, for example, 10 μm or more. The thickness of the shield 43a (conductor pattern 43) is preferably 35 μm or more, and more preferably 105 μm or more. A plating layer may be disposed on the shield 43a (conductor pattern 43). The thickness of the plating layer is preferably 10 μm or more, and more preferably 30 μm or more. The area of the shield 43a in plan view is, for example, larger than the area of the core 13c (second portion 13cb) in plan view. The shield 43a may be a solid pattern.
[0042] The third substrate 50 is, for example, a printed circuit board. The printed circuit board serving as the third substrate 50 may be, for example, a general-purpose printed circuit board. A through hole 51 is formed in the third substrate 50. The core 13c (first portion 13ca) passes through the through hole 51. The second portion 13cb is assembled to the first portion 13ca after the first portion 13ca passes through the through hole 51. The conductor pattern of the third substrate 50 is wound around the core 13c to form the windings 13a and 13b.
[0043] The base material of the third substrate 50 may be formed of ceramic such as aluminum oxide, aluminum nitride, or silicon carbide. The third substrate 50 may be a laminated bus bar. That is, the third substrate 50 may be formed by stacking and laminating an insulating film sheet and a metal conductor. The insulating film sheet may be, for example, a film made of polyethylene terephthalate (PET) or polyimide (PI), or paper made of aramid (fully aromatic polyamide) fibers. The insulating film sheet and the metal conductor may be bonded to each other using an adhesive layer or a pressure-sensitive adhesive layer.
[0044] The conductor pattern of the third substrate 50 on the surface facing the first substrate 30 is joined to the conductor pattern 33 in the first portion 34 and the conductor pattern 33 in the second portion 35 by a joining member 52. As a result, the winding 13a and the winding 13b of the third substrate 50 are electrically connected to the inverter circuit unit 10 in the first portion 34 and the rectifier circuit unit 11 in the second portion 35, respectively. The joining member 52 may be made of, for example, brazing material, solder, or a conductive adhesive. Although not shown, a thermally conductive member may be interposed between the first substrate 30 and the third substrate 50.
[0045] The power conversion device 100A further includes a plurality of support columns 61 and a plurality of connection members 62. The support columns 61 extend along the third direction DR3. The support columns 61 are disposed on the first substrate 30. The second substrate 40 is supported on the first substrate 30 by the plurality of support columns 61 at a distance from the first substrate 30. The connection members 62 extend along the third direction DR3. One end of the connection member 62 is connected to the conductor pattern 43, and the other end is connected to the conductor pattern 33. This electrically connects the first substrate 30 and the second substrate 40. More specifically, the plurality of connection members 62 electrically connect the main circuit unit and the control circuit unit 14 of the power conversion device 100A.
[0046] Fig. 4A is a cross-sectional view showing a first example combination of a plurality of power conversion devices 100A. Fig. 4B is a cross-sectional view showing a second example combination of a plurality of power conversion devices 100A. As shown in Figs. 4A and 4B, the plurality of power conversion devices 100A may be electrically connected to each other by a fourth substrate 80.
[0047] The fourth substrate 80 includes, for example, a base material 81, a conductor pattern 82, and a conductor pattern 83. The base material 81 includes a main surface 81a and a main surface 81b. The main surface 81a and the main surface 81b are both end surfaces of the base material 81 in the thickness direction. The conductor pattern 82 and the conductor pattern 83 are disposed on the main surface 81a and the main surface 81b, respectively. The conductor pattern 82 is electrically connected to each of the conductor patterns 33 (more specifically, the input terminals 10c and 10d and the output terminals 12c and 12d) of the multiple power conversion devices 100A by connecting members 84. The multiple electrical components 85 are mounted on the fourth substrate 80 by being connected to the conductor pattern 83.
[0048] The multiple power conversion devices 100A are connected in series or parallel by the fourth substrate 80. The base material 81 is formed of, for example, glass composite, glass epoxy, halogen-free, or the like. The fourth substrate 80 may be a bus bar on which multiple electrical components 85 are mounted. The electrical components 85 are, for example, capacitors that maintain power and suppress voltage fluctuations during a power outage, terminal blocks that connect all input and output wiring, noise filters, etc.
[0049] (Effects of Power Conversion Device 100A) The effects of the power conversion device 100A will be described below.
[0050] In the power conversion device 100A, heat generated in the core 13c is dissipated through the first substrate 30 and the cooling body 20. Also, in the power conversion device 100A, heat generated in the core 13c is dissipated through the shield 43a (second substrate 40). Therefore, in the power conversion device 100A, it is possible to efficiently cool the core 13c. Furthermore, as a result of the core 13c being efficiently cooled, it is not necessary to increase the size of the core 13c for heat dissipation, and it is possible to miniaturize the transformer unit 13 and, ultimately, the power conversion device 100A.
[0051] Furthermore, in the power conversion device 100A, heat generated in the first circuit component 36 is dissipated through the first substrate 30 and the cooling body 20. Heat generated in the second substrate 40 is also dissipated through the first substrate 30 and the cooling body 20. From this perspective as well, the power conversion device 100A allows for efficient cooling.
[0052] In the power conversion device 100A, since the second substrate 40 (shield 43a) is in contact with the core 13c, heat dissipation is improved, and the fixing of the core 13c improves vibration resistance, and the shield 43a shields electromagnetic noise generated in the core 13c, thereby preventing malfunction of the control circuit unit 14. Note that the thicker the shield 43a is and the larger the pattern area of the shield 43a is, the better the heat dissipation of the core 13c and the shielding ability of electromagnetic noise generated in the core 13c are.
[0053] In the above example, a configuration was described in which the core (core 13c) of the transformer unit 13 is placed in the groove 20c and pressed down from above by the second substrate 40. However, instead of this, a configuration may be used in which the core used in the smoothing reactor 12a is placed in the groove 20c and pressed down from above by the second substrate 40.
[0054] Second Embodiment A power conversion device according to a second embodiment will be described. The power conversion device according to the second embodiment is designated as power conversion device 100B. Here, differences from power conversion device 100A will be mainly described, and overlapping descriptions will not be repeated.
[0055] (Configuration of Power Conversion Device 100B) The configuration of the power conversion device 100B will be described below.
[0056] Fig. 5 is a cross-sectional view of the power conversion device 100B. Fig. 5 shows a cross section of the power conversion device 100B perpendicular to the second direction DR2. As shown in Fig. 5, the power conversion device 100B has a core 13c, a cooling body 20, a first substrate 30, a second substrate 40, a third substrate 50, a plurality of support columns 61, and connecting members 62. In this respect, the configuration of the power conversion device 100B is common to the configuration of the power conversion device 100A.
[0057] In the power conversion device 100B, the second substrate 40 is divided into a first divided substrate 45a, a second divided substrate 45b, and a third divided substrate 45c. The control circuit unit 14 has a primary side control circuit unit and a secondary side control circuit unit. The primary side control circuit unit is a portion of the control circuit unit 14 that controls the primary side main circuit unit. The secondary side control circuit unit is a portion of the control circuit unit 14 that controls the secondary side main circuit unit. Some of the multiple second circuit components 44 are mounted on the first divided substrate 45a to form the primary side control circuit unit. Other parts of the multiple second circuit components 44 are mounted on the second divided substrate 45b to form the secondary side control circuit unit. Note that the second circuit components 44 may or may not be mounted on the third divided substrate 45c.
[0058] The first divided substrate 45a and the second divided substrate 45b are electrically connected by the third divided substrate 45c. More specifically, the first divided substrate 45a and the third divided substrate 45c are connected by a wiring member 46, and the second divided substrate 45b and the third divided substrate 45c are connected by the wiring member 46. The wiring member 46 is, for example, a connector, a harness, a flexible substrate, etc. The third divided substrate 45c (more specifically, the conductor pattern 43 on the third divided substrate 45c) is in contact with the core 13c. From another perspective, the conductor pattern 43 on the third divided substrate 45c forms a shield 43a.
[0059] The height position of the third divided substrate 45c from the first substrate 30 is different from the height position of the first divided substrate 45a from the first substrate 30 and the height position of the second divided substrate 45b from the first substrate 30. Here, the height position from the first substrate 30 refers to the distance from the first substrate 30 in the third direction DR3. The height position of the third divided substrate 45c from the first substrate 30 is, for example, farther from the first substrate 30 than the height position of the first divided substrate 45a from the first substrate 30 and the height position of the second divided substrate 45b from the first substrate 30. In these respects, the configuration of the power conversion device 100B differs from the configuration of the power conversion device 100A.
[0060] (Effects of Power Conversion Device 100B) The effects of the power conversion device 100B will be described below.
[0061] For example, a change in specifications may require the core 13c to be increased in size or height. In the power conversion device 100B, the third divided substrate 45c is separated from the first divided substrate 45a and the second divided substrate 45b, so such a change in specifications can be flexibly accommodated. Furthermore, in the power conversion device 100B, even if a change in specifications occurs, there is no need to lengthen the support posts 61 and connecting members 62 between the first divided substrate 45a or the second divided substrate 45b and the first substrate 30. This makes it possible to prevent the power conversion device 100B from increasing in size due to the change in specifications and to prevent a decrease in vibration resistance.
[0062] Third Embodiment A power conversion device according to a third embodiment will be described. The power conversion device according to the third embodiment is designated as power conversion device 100C. Here, differences from power conversion device 100A will be mainly described, and overlapping descriptions will not be repeated.
[0063] (Configuration of Power Conversion Device 100C) The configuration of the power conversion device 100C will be described below.
[0064] Fig. 6 is a cross-sectional view of the power conversion device 100C. Fig. 6 shows a cross section of the power conversion device 100C perpendicular to the second direction DR2. As shown in Fig. 6, the power conversion device 100C has a core 13c, a cooling body 20, a first substrate 30, a second substrate 40, a third substrate 50, a plurality of support columns 61, and connecting members 62. In this respect, the configuration of the power conversion device 100C is common to the configuration of the power conversion device 100A.
[0065] The power conversion device 100C further includes a thermally conductive member 63. The thermally conductive member 63 is interposed between the core 13c (second portion 13cb) and the shield 43a. The thermal conductivity of the thermally conductive member 63 is, for example, 0.1 W / (m·K) or higher. The thermal conductivity of the thermally conductive member 63 is preferably 1.0 W / (m·K) or higher, and more preferably 10.0 W / (m·K) or higher. The thermally conductive member 63 may be made of thermally conductive grease, a thermally conductive sheet, a thermally conductive adhesive, an epoxy resin containing a thermally conductive filler, or rubber such as silicone or urethane. The thermally conductive member 63 may or may not be electrically insulating. In these respects, the configuration of the power conversion device 100C differs from the configuration of the power conversion device 100A.
[0066] (Effects of Power Conversion Device 100C) The effects of the power conversion device 100C will be described below.
[0067] In the power conversion device 100C, the heat conduction member 63 is disposed between the core 13c and the shield 43a, so that heat generated in the core 13c is efficiently conducted to the shield 43a via the heat conduction member 63. When the second substrate 40 is connected to the first substrate 30 by the support 61, the heat generated in the core 13c is conducted to the heat conduction member 63, the shield 43a, and the second substrate 40, and then further to the support 61 and the first substrate 30, and is dissipated from the cooling body 20. As a result, the power conversion device 100C enables the core 13c to be miniaturized, and therefore the power conversion device 100C as a whole to be miniaturized.
[0068] Furthermore, in power conversion device 100C, heat conduction member 63 is disposed between core 13c and shield 43a, which more easily applies a force pressing core 13c against cooling body 20. As a result, power conversion device 100C can improve the vibration resistance of core 13c, and therefore the vibration resistance of transformer unit 13 and power conversion device 100C.
[0069] Fourth Embodiment A power conversion device according to a fourth embodiment will be described. The power conversion device according to the fourth embodiment is designated as power conversion device 100D. Here, differences from power conversion device 100A will be mainly described, and overlapping descriptions will not be repeated.
[0070] (Configuration of Power Converter 100D) The configuration of the power converter 100D will be described below.
[0071] Fig. 7 is a cross-sectional view of the power conversion device 100D. Fig. 7 shows a cross section of the power conversion device 100D perpendicular to the second direction DR2. As shown in Fig. 7, the power conversion device 100D has a core 13c, a cooling body 20, a first substrate 30, a second substrate 40, a third substrate 50, a plurality of support columns 61, and connecting members 62. In this respect, the configuration of the power conversion device 100D is common to the configuration of the power conversion device 100A.
[0072] The power conversion device 100D further includes a screw member 64. The screw member 64 is passed through a through-hole formed in the second substrate 40 and the core 13c, and then threaded into a threaded hole formed in the cooling body 20. This electrically connects the shield 43a to the cooling body 20. In these respects, the configuration of the power conversion device 100D differs from the configuration of the power conversion device 100A.
[0073] In the power conversion device 100D, the core 13c is fixed to the cooling body 20 by the screw members 64, which improves the vibration resistance of the core 13c and, consequently, the vibration resistance of the transformer unit 13 and the power conversion device 100D. Furthermore, in the power conversion device 100D, heat generated in the core 13c and the second substrate 40 is transferred to the cooling body 20 via the screw members 64 and is efficiently dissipated from the cooling body 20. This allows the second substrate 40 and the core 13c to be miniaturized, and therefore the transformer unit 13 and the power conversion device 100D to be miniaturized.
[0074] <Modification> Although not shown, the screw member 64 may be passed through through holes formed in the second substrate 40, the core 13c, and the first substrate 30 (metal base 31), and then screwed into a threaded hole formed in the cooling body 20. In this case as well, heat generated in the core 13c and the second substrate 40 can be efficiently dissipated from the cooling body 20, thereby making it possible to reduce the size of the second substrate 40 and the core 13c, and therefore the size of the transformer unit 13 and the power conversion device 100D.
[0075] Fifth Embodiment A power conversion device according to a fifth embodiment will be described. The power conversion device according to the fifth embodiment is designated as power conversion device 100E. Here, differences from power conversion device 100A will be mainly described, and overlapping descriptions will not be repeated.
[0076] (Configuration of Power Converter 100E) The configuration of the power converter 100E will be described below.
[0077] Fig. 8 is a cross-sectional view of the power conversion device 100E. Fig. 8 shows a cross section of the power conversion device 100E perpendicular to the second direction DR2. As shown in Fig. 8, the power conversion device 100E has a core 13c, a cooling body 20, a first substrate 30, a second substrate 40, a third substrate 50, a plurality of support columns 61, and connecting members 62. In this respect, the configuration of the power conversion device 100E is common to the configuration of the power conversion device 100A.
[0078] The power conversion device 100E further includes an elastic member 65. The elastic member 65 is disposed between the core 13c (second portion 13cb) and the shield 43a. The elastic member 65 is, for example, a spring. In these respects, the configuration of the power conversion device 100E differs from the configuration of the power conversion device 100A.
[0079] In the power conversion device 100E, the elastic member 65 is disposed between the core 13c and the shield 43a, so that heat generated in the core 13c is efficiently transferred to the shield 43a via the elastic member 65. Therefore, the power conversion device 100E allows for a reduction in the size of the core 13c, and therefore the size of the power conversion device 100E. Furthermore, in the power conversion device 100E, the elastic member 65 is disposed between the core 13c and the shield 43a, so that the force pressing the core 13c against the cooling body 20 is more likely to act. As a result, the power conversion device 100E allows for improved vibration resistance of the core 13c, and therefore the vibration resistance of the transformer unit 13 and the power conversion device 100C.
[0080] Sixth Embodiment A power conversion device according to a sixth embodiment will be described. The power conversion device according to the sixth embodiment is designated as power conversion device 100F. Here, differences from power conversion device 100A will be mainly described, and overlapping descriptions will not be repeated.
[0081] (Configuration of Power Converter 100F) The configuration of the power converter 100F will be described below.
[0082] Fig. 9 is a cross-sectional view of the power conversion device 100F. Fig. 9 shows a cross section of the power conversion device 100F perpendicular to the second direction DR2. As shown in Fig. 9, the power conversion device 100F has a core 13c, a cooling body 20, a first substrate 30, a second substrate 40, a third substrate 50, a plurality of support columns 61, and connecting members 62. In this respect, the configuration of the power conversion device 100F is common to the configuration of the power conversion device 100A.
[0083] The power conversion device 100F further includes a heat dissipation member 66. The heat dissipation member 66 is connected to the shield 43a by, for example, a conductive adhesive, solder, brazing material, or the like. The heat dissipation member 66 has, for example, a rectangular prism, a cylinder, a plate, or a comb-like shape. The heat dissipation member 66 has a thermal conductivity of, for example, 0.1 W / (m·K) or more. The heat conductivity of the heat dissipation member 66 is preferably 1.0 W / (m·K) or more, and more preferably 10.0 W / (m·K) or more. Specific examples of materials constituting the heat dissipation member 66 include metal materials such as copper, copper alloys, iron, iron alloys, aluminum, and aluminum alloys.
[0084] The side surfaces of the second portion 13cb include a pair of first side surface portions and a pair of second side surface portions. The pair of first side surface portions face each other in the first direction DR1, and the pair of second side surface portions face each other in the second direction DR2. The heat dissipation member 66 is disposed facing at least a portion of the side surface of the second portion 13cb. For example, the heat dissipation member 66 may be disposed facing the first side surface portion or the second side surface portion. The heat dissipation member 66 may be disposed facing the first side surface portion and the second side surface portion so as to surround the second portion 13cb in a plan view.
[0085] Although not shown, a thermally conductive member may be disposed between the heat dissipation member 66 and the second portion 13cb. The thermally conductive member 63 may be made of thermally conductive grease, a thermally conductive sheet, a thermally conductive adhesive, an epoxy resin containing a thermally conductive filler, or rubber such as silicone or urethane. In these respects, the configuration of the power conversion device 100F differs from the configuration of the power conversion device 100A.
[0086] (Effects of Power Converter 100F) The effects of the power converter 100F will be described below.
[0087] When the second portion 13cb is misaligned with the first portion 13ca in a plan view, the cross-sectional area of a portion of the closed magnetic circuit of the core 13c becomes smaller, resulting in a decrease in inductance. In the power conversion device 100F, the heat dissipation member 66 enables the second portion 13cb to be positioned with respect to the first portion 13ca in a plan view, thereby preventing a decrease in performance of the core 13c and, ultimately, the transformer unit 13.
[0088] In the power conversion device 100F, heat generated in the core 13c is conducted to the shield 43a and from the shield 43a to the heat dissipation member 66, and is efficiently dissipated from the heat dissipation member 66. Therefore, the power conversion device 100F allows the core 13c to be miniaturized, and ultimately the power conversion device 100F to be miniaturized. Note that if a thermally conductive member is disposed between the heat dissipation member 66 and the second portion 13cb, the heat generated in the core 13c can be dissipated from the heat dissipation member 66 even more efficiently.
[0089] Seventh Embodiment A power conversion device according to a seventh embodiment will be described. The power conversion device according to the seventh embodiment is designated as power conversion device 100G. Here, differences from power conversion device 100A will be mainly described, and overlapping descriptions will not be repeated.
[0090] (Configuration of Power Conversion Device 100G) The configuration of the power conversion device 100G will be described below.
[0091] Fig. 10 is a cross-sectional view of the power conversion device 100G. Fig. 10 shows a cross section of the power conversion device 100G perpendicular to the second direction DR2. Fig. 11 is a plan view of the power conversion device 100G. As shown in Figs. 10 and 11 , the power conversion device 100G has a core 13c, a cooling body 20, a first substrate 30, a second substrate 40, a third substrate 50, a plurality of support columns 61, and connecting members 62. In this respect, the configuration of the power conversion device 100G is common to the configuration of the power conversion device 100A.
[0092] The power conversion device 100G further includes fixing members 67a and 67b and screw members 68a and 68b. The groove 20c includes a side wall surface 20ca and a side wall surface 20cb. The side wall surface 20ca and the side wall surface 20cb face each other with a gap in between in the second direction DR2. The fixing members 67a and 67b are inserted between the core 13c and the side wall surface 20ca and between the core 13c and the side wall surface 20cb, respectively. The fixing members 67a and 67b are in contact with the bottom surface (20cc) of the groove 20c at their lower ends and with the second substrate 40 (shield 43a) at their upper ends.
[0093] The screw members 68a are passed through through holes formed in the second substrate 40 and the fixing member 67a and then screwed into threaded holes formed in the bottom surface 20cc. The screw members 68b are passed through through holes formed in the second substrate 40 and the fixing member 67b and then screwed into threaded holes formed in the bottom surface 20cc. In these respects, the configuration of the power conversion device 100G differs from the configuration of the power conversion device 100A.
[0094] (Effects of Power Conversion Device 100G) The effects of the power conversion device 100G will be described below.
[0095] In the power conversion device 100G, the fixing members 67a and 67b enable the core 13c (first portion 13ca, second portion 13cb) to be positioned in a planar view, thereby preventing performance degradation of the core 13c and, ultimately, the transformer unit 13.
[0096] In the power conversion device 100G, the heat generated in the core 13c is transferred from the fixing members 67a and 67b to the shield 43a and the cooling body 20, thereby efficiently cooling the core 13c, thereby enabling the miniaturization of the core 13c, and therefore the transformer unit 13 and the power conversion device 100G. Furthermore, in the power conversion device 100G, the fixing members 67a and 67b block electromagnetic noise generated in the core 13c and prevent the electromagnetic noise from entering the second board 40, thereby preventing malfunction of the control circuit unit 14.
[0097] Eighth Embodiment A power conversion device according to an eighth embodiment will be described. The power conversion device according to the eighth embodiment is designated as power conversion device 100H. Here, differences from power conversion device 100A will be mainly described, and overlapping descriptions will not be repeated.
[0098] (Configuration of Power Converter 100H) The configuration of the power converter 100H will be described below.
[0099] Fig. 12 is a cross-sectional view of the power conversion device 100H. Fig. 12 shows a cross-section of the power conversion device 100H perpendicular to the second direction DR2. As shown in Fig. 12, the power conversion device 100H has a core 13c, a cooling body 20, a first substrate 30, a second substrate 40, a third substrate 50, a plurality of support columns 61, and connecting members 62. In this respect, the configuration of the power conversion device 100H is common to the configuration of the power conversion device 100A.
[0100] The power conversion device 100H further includes a sealing member 69. The sealing member 69 fills the space between the first substrate 30 and the second substrate 40. It is sufficient that the sealing member 69 fills at least a portion of the space between the first substrate 30 and the second substrate 40. The thermal conductivity of the sealing member 69 is, for example, 0.1 W / (m·K) or more. The thermal conductivity of the sealing member 69 is preferably 1.0 W / (m·K) or more, and more preferably 10.0 W / (m·K) or more. The sealing member 69 has electrical insulation properties. The Young's modulus of the sealing member 69 is, for example, 1 MPa or more. The sealing member 69 may be formed from an epoxy resin containing a thermally conductive filler, or may be formed from a rubber such as silicone or urethane. In these respects, the configuration of the power conversion device 100H differs from the configuration of the power conversion device 100A.
[0101] (Effects of Power Converter 100H) The effects of the power converter 100H will be described below.
[0102] In the power conversion device 100H, heat generated in the components sealed by the sealing member 69 is transferred to the cooling body 20 via the sealing member 69 and is efficiently dissipated in the cooling body 20. Therefore, it is not necessary to increase the size of the above components for heat dissipation, and the power conversion device 100H can be made smaller. Furthermore, as a result of filling the sealing member 69, the components sealed in the sealing member 69 are fixed, and the vibration resistance of the power conversion device 100H can be improved.
[0103] Ninth embodiment A power conversion device according to a ninth embodiment will be described. The power conversion device according to the ninth embodiment is designated as power conversion device 100I. Here, differences from power conversion device 100A will be mainly described, and overlapping descriptions will not be repeated.
[0104] (Configuration of Power Conversion Device 100I) The configuration of the power conversion device 100I will be described below.
[0105] Fig. 13 is a cross-sectional view of the power conversion device 100I. Fig. 13 shows a cross-section of the power conversion device 100I perpendicular to the second direction DR2. Fig. 14 is a plan view of the power conversion device 100I. As shown in Figs. 13 and 14, the power conversion device 100I has a core 13c, a cooling body 20, a first substrate 30, a second substrate 40, a third substrate 50, a plurality of support columns 61, and connecting members 62. In this respect, the configuration of the power conversion device 100I is common to the configuration of the power conversion device 100A.
[0106] The power conversion device 100I further includes a cooling plate 70 and a plurality of screw members 71. The cooling plate 70 is disposed on the second substrate 40. Although not shown, the cooling plate 70 may have a notch formed therein to avoid interference with the second circuit components 44. The screw members 71 are passed through through holes formed in the cooling plate 70 and the second substrate 40, and then screwed into threaded holes formed in the support posts 61.
[0107] The thermal conductivity of the cooling plate 70 is, for example, 0.1 W / (m·K) or more. The thermal conductivity of the cooling plate 70 is preferably 1.0 W / (m·K) or more, and more preferably 10.0 W / (m·K) or more. Specific examples of materials for the cooling plate 70 include metal materials such as copper, copper alloys, iron, iron alloys, aluminum, and aluminum alloys. In these respects, the configuration of the power conversion device 100I differs from the configuration of the power conversion device 100A.
[0108] (Effects of Power Conversion Device 100I) The effects of the power conversion device 100I will be described below.
[0109] In the power conversion device 100I, heat generated in the core 13c and the second substrate 40 is transferred to the cooling plate 70, where it is efficiently dissipated. Therefore, the power conversion device 100I makes it possible to reduce the size of the core 13c and the second substrate 40, and ultimately to reduce the size of the power conversion device 100I. In the power conversion device 100I, the core 13c is fixed so as to be sandwiched between the cooling body 20 and the cooling plate 70, so that the core 13c is fixed more firmly. This improves the vibration resistance of the core 13c, and ultimately improves the vibration resistance of the power conversion device 100I.
[0110] [Appendix] Various aspects of the present disclosure are summarized as appendices.
[0111] <Supplementary Note 1> A power conversion device comprising: a cooling body; a core; a first substrate; a second substrate; a third substrate; a connecting member; a plurality of first circuit components; and a plurality of second circuit components; the cooling body has a first main surface and a second main surface opposite to the first main surface; a groove recessed toward the second main surface is formed in the first main surface; at least a portion of the core is disposed in the groove; the first substrate has a metal base, an insulating layer, and a first conductor pattern; the insulating layer is disposed on the metal base; and the first conductor pattern is disposed on the insulating layer; a slit penetrating the first substrate is formed in the first substrate; the first substrate is disposed on the cooling body such that the metal base is in contact with the first main surface and the core is passed through the slit; and the second substrate has a base material, a second conductor pattern, and a third conductor pattern. a power conversion device, wherein the base has a third main surface and a fourth main surface opposite to the third main surface, the second conductor pattern and the third conductor pattern are respectively arranged on the third main surface and the fourth main surface, the second board is arranged at a distance from the first board so that the third conductor pattern is in contact with the core, the third board has a winding wound around the core and is arranged between the first board and the second board, the connecting member connects the first board and the second board, the plurality of first circuit components are electrically connected to the first conductor pattern, and the plurality of second circuit components are electrically connected to either the second conductor pattern or the third conductor pattern.
[0112] <Supplementary Note 2> The power conversion device according to Supplementary Note 1, wherein the plurality of first circuit components constitute a main circuit unit of the power conversion device, and the plurality of second circuit components constitute a control circuit unit that controls the main circuit unit.
[0113] <Supplementary Note 3> The power conversion device according to Supplementary Note 2, wherein the second substrate is divided into a first divided substrate, a second divided substrate, and a third divided substrate, the control circuit section has a primary side control circuit section constituted by a portion of the plurality of second circuit components mounted on the first divided substrate, and a secondary side control circuit section constituted by another portion of the plurality of second circuit components mounted on the second divided substrate, the first divided substrate and the second divided substrate are electrically connected to each other by the third divided substrate, the third conductor pattern on the third divided substrate is in contact with the core, and a height position of the first divided substrate from the first substrate and a height position of the second divided substrate from the first substrate are different from a height position of the third substrate from the first substrate.
[0114] <Supplementary Note 4> The power conversion device according to any one of Supplementary Note 1 to Supplementary Note 3, wherein the core and the winding constitute a transformer or a reactor.
[0115] <Supplementary Note 5> The power conversion device according to any one of Supplementary Note 1 to Supplementary Note 4, further comprising a heat conduction member, wherein the third conductor pattern and the core are in contact with each other with the heat conduction member interposed therebetween.
[0116] <Supplementary Note 6> The power conversion device according to any one of Supplementary Note 1 to Supplementary Note 5, further comprising a screw member, wherein the screw member is passed through through holes formed in the first substrate, the second substrate, and the core, and is threaded into a screw hole formed in the cooling body.
[0117] <Supplementary Note 7> The power conversion device according to any one of Supplementary Note 1 to Supplementary Note 6, further comprising an elastic member, wherein the third conductor pattern and the core are in contact with each other via the elastic member.
[0118] <Supplementary Note 8> The power conversion device according to any one of Supplementary Note 1 to Supplementary Note 7, further comprising a heat dissipation member, wherein the heat dissipation member faces at least a part of a side surface of the core and is in contact with the third conductor pattern.
[0119] <Supplementary Note 9> The power conversion device according to Supplementary Note 1 to Supplementary Note 8, further comprising a first fixing member and a second fixing member, wherein a longitudinal direction of the cooling body is along a first direction, the groove has a first side wall surface and a second side wall surface, the first side wall surface and the second side wall surface face each other with a gap in a second direction perpendicular to the first direction, and the first fixing member and the second fixing member are respectively arranged between the core and the first side wall surface and between the core and the second side wall surface.
[0120] <Supplementary Note 10> The power conversion device according to any one of Supplementary Note 1 to Supplementary Note 9, further comprising a sealing member, wherein the sealing member fills at least a part of a space between the first substrate and the second substrate.
[0121] <Supplementary Note 11> The power conversion device according to any one of Supplementary Note 1 to Supplementary Note 10, further comprising: a cooling plate; a support pillar; and a screw member, wherein the cooling plate is disposed on the second substrate; the support pillar supports the second substrate on the first substrate; and the screw member is passed through a through-hole formed in the cooling plate and the second substrate and then screwed into the support pillar.
[0122] <Supplementary Note 12> The power conversion device according to any one of Supplementary Note 1 to Supplementary Note 11, wherein the third conductor pattern is in contact with the core via a protective film provided on the third conductor pattern.
[0123] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The scope of this application is defined by the claims, not the above description, and is intended to include all modifications within the meaning and scope of the claims.
[0124] 10 inverter circuit section, 10aa, 10ab, 10ac, 10ad transistor, 10a switching element, 10b input capacitor, 10c, 10d input terminal, 11 rectifier circuit section, 11a rectifier element, 11aa, 11ab, 11ac, 11ad diode, 12 smoothing circuit section, 12a smoothing reactor, 12b smoothing capacitor, 12c, 12d output terminal, 13 transformer section, 13a, 13b winding, 13c core, 13ca first part, 13cb second part, 14 control circuit section, 14a detection section, 14b control section, 20 cooling body, 20a main surface, 20b main surface, 20c groove, 20ca side wall surface, 20cb side wall surface, 20cc bottom surface, 30 first substrate, 30a Slit, 31 Metal base, 32 Insulating layer, 33 Conductive pattern, 34 First portion, 35 Second portion, 36 First circuit component, 40 Second substrate, 41 Base material, 41a, 41b Main surface, 42 Conductive pattern, 43 Conductive pattern, 43a Shield, 44 Second circuit component, 45a First divided substrate, 45b Second divided substrate, 45c Third divided substrate, 46 Wiring member, 50 Third substrate, 51 Through hole, 52 Joint member, 61 Support, 62 Connection member, 63 Heat conduction member, 64 Screw member, 65 Elastic member, 66 Heat dissipation member, 67a, 67b Fixing member, 68a Screw member, 68b Screw member, 69 Sealing member, 70 Cooling plate, 71 Screw member, 80 Fourth substrate, 81 Base material, 81a, 81b Main surface, 82, 83 Conductor pattern, 84 connecting member, 85 electrical component, 100A, 100B, 100C, 100D, 100E, 100F, 100G, 100H, 100I power conversion device, DR1 first direction, DR2 second direction, DR3 third direction.
Claims
1. A power conversion device, Cooling element and The core and First substrate and The second circuit board and It comprises a third substrate, The cooling body has a first main surface and a second main surface which is the surface opposite to the first main surface. The first main surface has grooves formed therein that are recessed toward the second main surface. At least a portion of the core is arranged in the groove, The first substrate has a metal base, an insulating layer, and a first conductor pattern. The insulating layer is disposed on the metal base, The first conductor pattern is arranged on the insulating layer, The first substrate has a slit formed through it, The first substrate is arranged on the cooling body such that the metal base is in contact with the first main surface and the core passes through the slit. The second substrate comprises a base material and a second conductor pattern. The substrate has a third main surface, The second conductor pattern is arranged on the third main surface, A power conversion device wherein the third substrate has windings wound around the core and is located between the first substrate and the second substrate.
2. A plurality of first circuit components, It further comprises multiple second circuit components, The second substrate further has a third conductor pattern, The substrate has a fourth main surface which is the surface opposite to the third main surface, The third conductor pattern is arranged on the fourth main surface, The plurality of first circuit components are electrically connected to the first conductor pattern. The power conversion device according to claim 1, wherein the plurality of second circuit components are electrically connected to either the second conductor pattern or the third conductor pattern.
3. The power conversion device according to claim 2, wherein the second substrate is arranged at a distance from the first substrate such that the third conductor pattern is in contact with the core.
4. The aforementioned plurality of first circuit components constitute the main circuit section of the power converter. The power conversion device according to claim 2, wherein the plurality of second circuit components constitute a control circuit that performs control over the main circuit.
5. The aforementioned second substrate is divided into a first divided substrate, a second divided substrate, and a third divided substrate. The control circuit section comprises a primary control circuit section composed of a portion of the plurality of second circuit components mounted on the first divided substrate, and a secondary control circuit section composed of the other portion of the plurality of second circuit components mounted on the second divided substrate. The first divided substrate and the second divided substrate are electrically connected to each other by the third divided substrate. The third conductor pattern on the third divided substrate is in contact with the core. The power conversion device according to claim 4, wherein the height position of the first divided substrate from the first substrate and the height position of the second divided substrate from the first substrate are different from the height position of the third substrate from the first substrate.
6. The power conversion device according to claim 1, further comprising a connecting member that connects the first substrate and the second substrate.
7. The power conversion device according to any one of claims 1 to 6, wherein the core and the winding constitute a transformer or reactor.
8. Further equipped with a heat conductive member, The power conversion device according to any one of claims 2 to 5, wherein the third conductor pattern and the core are in contact with the heat conductive member interposed therebetween.
9. Further equipped with a screw member, The power conversion device according to any one of claims 1 to 6, wherein the screw member is passed through through holes formed in the first substrate, the second substrate, and the core, and then screwed into screw holes formed in the cooling body.
10. Further equipped with an elastic member, The power conversion device according to any one of claims 2 to 5, wherein the third conductor pattern and the core are in contact with the elastic member interposed therebetween.
11. Further equipped with heat dissipation components, The power conversion device according to any one of claims 2 to 5, wherein the heat dissipation member faces at least a portion of the side surface of the core and is in contact with the third conductor pattern.
12. Further comprising a first fixing member and a second fixing member, The longitudinal direction of the cooling body is along the first direction, The groove has a first side wall surface and a second side wall surface. The first side wall surface and the second side wall surface are separated and facing each other in a second direction perpendicular to the first direction. The power conversion device according to any one of claims 1 to 6, wherein the first fixing member and the second fixing member are disposed between the core and the first side wall surface and between the core and the second side wall surface, respectively.
13. Further comprising a sealing member, The power conversion device according to any one of claims 1 to 6, wherein the sealing member fills at least a portion of the space between the first substrate and the second substrate.
14. Cooling plate and Support posts and Further comprising a screw member, The cooling plate is placed on the second substrate, The support column supports the second substrate on the first substrate, The power conversion device according to any one of claims 1 to 6, wherein the screw member is passed through a through hole formed in the cooling plate and the second substrate and then screwed into the support column.
15. The power conversion device according to any one of claims 2 to 5, wherein the third conductor pattern is in contact with the core via a protective film provided on the third conductor pattern.
