Semiconductor device and method for fabricating the same

Abstract

A semiconductor device and a method for manufacturing the same are provided. The semiconductor device of the present embodiment is a semiconductor device comprising a variable resistive memory layer, wherein the memory layer may include a plurality of MTJ patterns including a plurality of magnetic layer patterns and a tunnel barrier layer pattern formed on a substrate; and a self-assembled single layer (SAM) pattern disposed between the plurality of MTJ patterns and having a tapered structure.

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