Vapor chamber for semiconductor package module and semiconductor package module and power conversion device including the same

Abstract

A vapor chamber for a semiconductor package module according to an embodiment includes a lower metal plate, a hollow structure, and an upper metal plate arranged sequentially, and the lower metal plate may include a first plate, a second plate, and a third plate arranged sequentially. The coefficient of thermal expansion of the second plate may be smaller than the coefficient of thermal expansion of the first plate or the third plate.

Description

Technology Field

[0001] The embodiment relates to a vapor chamber for a semiconductor package module, a semiconductor package module including the same, and a power conversion device. Background Technology

[0002] As the performance of electrical and electronic products advances, semiconductor packages in which multiple semiconductor devices are arranged on a circuit board are being utilized. Semiconductor packages have the advantage of efficiently utilizing the mounting area of ​​semiconductor devices and enabling high-speed signal transmission through short signal transmission paths between semiconductor devices.

[0003] Meanwhile, the field of data sensor technology utilizing AI semiconductors is one of the fastest-growing sectors in the semiconductor market recently. With the increasing use of AI semiconductors in data centers that consume incomparably higher power than conventional semiconductors, there is significant interest in thermal management technology for semiconductor packages. Consequently, the semiconductor and packaging markets in the currently high-growth data center sector are applying many new technologies to secure thermal management capabilities.

[0004] In addition, 1200V, 200A class high voltage / high power SiC power conversion modules are being used to improve the performance of hybrid and electric vehicles and for autonomous vehicles. During the operation of such high-performance electric vehicles, the operating temperature of power semiconductor devices is required to be over 300℃ on average, and the instantaneous maximum operating temperature is 350℃ to 700℃, facing ultra-high temperature usage conditions.

[0005] In such ultra-high temperature, high voltage, and high current operating environments, existing bonding materials themselves may remelt, and pores present in the bonding area may cause heat trapping, which can rapidly degrade the lifespan of power semiconductor modules and induce thermal runaway, leading to the destruction of power semiconductor devices and potentially having a serious impact on operator safety.

[0006] Recently, various heat dissipation components and modules, such as heat sinks, heat dissipation plates, heat pipes, and vapor chambers, are being researched to solve heat generation problems in electronic devices, such as high-performance semiconductors like AI semiconductors and power semiconductor modules.

[0007] FIG. 1a is a drawing of a semiconductor package module (10A) of a first comparative example including a vapor chamber that is studied internally.

[0008] The semiconductor package module (10A) of the first comparative example includes an electronic element (50), a metal lid (60), a vapor chamber (80), and a heat sink (90). A metal lid (60) is placed on the electronic element (50) to release heat generated from the electronic element (50) in an upward direction, and the electronic element (50) and the metal lid (60) can be bonded by a first-1 adhesive layer (40P).

[0009] Additionally, a vapor chamber (80) and a heat sink (90) are disposed on the metal lead (60), and the metal lead (60) and the vapor chamber (80) can be bonded with a second adhesive layer (70).

[0010] Meanwhile, in the semiconductor package module (10A) of the first comparative example, the first-1 adhesive layer (40P) was formed of a polymer-based material.

[0011] However, the first adhesive layer (40P) of the polymer material has low thermal conductivity, so the heat generated from the electronic device (50) does not spread out and is concentrated in the center, resulting in a problem of reduced heat dissipation efficiency. Accordingly, the semiconductor package module (10A) of the first comparative example had a problem in which the temperature of the electronic device (50) increased, and the driving power was lowered to lower the temperature of the electronic device (50) itself, causing the performance to drop to 30% or less.

[0013] Next, FIG. 1b is a drawing of a semiconductor package module (10B) of a second comparative example including a vapor chamber being studied internally, and FIG. 1c is a photograph of a delamination problem (DP) in the semiconductor package module (10B) of the second comparative example.

[0014] Unlike the first comparative example, in the semiconductor package module (10B) of the second comparative example, a method was studied to form the first-second adhesive layer (40M) with a metal material to improve the efficiency of transferring heat generated from the electronic device (50) to the top. However, there is a difference in the coefficient of thermal expansion between the metal lead (60) and the electronic device (50), and when the temperature of the electronic device (50) increases rapidly, warpage occurs, and as a result, cracks and voids occur in the first-second adhesive layer (40M), causing delamination (DP) in the first-second adhesive layer (40M).

[0015] Accordingly, existing technologies attempt to employ a metal adhesive layer to efficiently transfer heat generated from electronic devices to the upper surface, but they face a technical contradiction where delamination occurs in the metal adhesive layer due to differences in thermal expansion coefficients. The problem to be solved

[0016] One of the technical challenges of the embodiment is to resolve the problem of technical contradiction in which delamination occurs in the metal adhesive layer due to the difference in thermal expansion coefficients, while efficiently transferring heat generated from the electronic device to the top by employing a metal adhesive layer.

[0017] The technical problems of the embodiments are not limited to those described in this section and include those that can be identified through the description of the invention. means of solving the problem

[0018] A vapor chamber for a semiconductor package module according to an embodiment includes a lower metal plate (133), a hollow structure (132), and an upper metal plate (131) arranged sequentially, and the lower metal plate (133) may include a first plate (136), a second plate (137), and a third plate (138) arranged sequentially.

[0019] The coefficient of thermal expansion of the second plate (137) may be smaller than the coefficient of thermal expansion of the first plate (136) or the third plate (138).

[0020] The thickness of the first plate (136) may be greater than the thickness of the third plate (138).

[0021] The second plate (137) may be positioned to be closer to the upper surface than to the lower surface of the lower metal plate (133).

[0022] The lower plate may further include a thermally conductive plug (139) within the second plate (137).

[0023] The above thermal conductive plug (139) has higher thermal conductivity than the second plate (137), and the thermal conductive plug (139) may have a lower thermal expansion rate than the second plate (137).

[0025] Additionally, a semiconductor package module including a vapor chamber according to an embodiment may include a substrate (110), an electronic device (150) disposed on the substrate (110), and a vapor chamber (130) disposed on the electronic device (150).

[0026] The above vapor chamber (130) includes a lower metal plate (133), a hollow structure (132), and an upper metal plate (131) arranged sequentially, and the lower metal plate (133) may include a first plate (136), a second plate (137), and a third plate (138) arranged sequentially in an upward direction.

[0027] The coefficient of thermal expansion of the second plate (137) may be smaller than the coefficient of thermal expansion of the first plate (136) or the third plate (138).

[0028] Additionally, the embodiment further includes a first adhesive layer (140) disposed between the electronic element (150) and the vapor chamber (130), and the first adhesive layer (140) may include a metal material.

[0029] The thermal expansion coefficient of the second plate (137) may be greater than the thermal expansion coefficient of the electronic element (150).

[0030] The thickness of the first plate (136) may be greater than the thickness of the third plate (138).

[0031] The second plate (137) may be positioned so as to be adjacent to the upper surface rather than the lower surface of the lower metal plate (133).

[0032] The second plate (137) is 4.0 x 10 -6 / ℃ to 17 x 10 -6 It may include a metallic material or a ceramic material having a coefficient of thermal expansion within the range of / ℃.

[0033] The lower plate may further include a thermally conductive plug (139) within the second plate (137).

[0034] The above thermal conductive plug (139) has higher thermal conductivity than the second plate (137), and the thermal conductive plug (139) may have a lower thermal expansion rate than the second plate (137).

[0036] Additionally, a semiconductor package module including a vapor chamber according to an embodiment may include a substrate (110), an electronic device (150) disposed on the substrate (110), a vapor chamber (130) disposed on the electronic device (150), and a first adhesive layer (140) disposed between the electronic device (150) and the vapor chamber (130).

[0037] The above steam chamber (130) includes a lower metal plate (133), a hollow structure, and an upper metal plate (131) arranged sequentially, and the lower metal plate (133) may include a first plate (136), a second plate (137), and a third plate (138) arranged sequentially in an upward direction.

[0038] The thickness of the first plate (136) may be thicker than the thickness of the third plate (138).

[0039] Additionally, the embodiment may further include a first adhesive layer (140) disposed between the electronic element (150) and the vapor chamber (130).

[0040] The first adhesive layer (140) comprises a metal material, and the coefficient of thermal expansion of the second plate (137) may be smaller than the coefficients of thermal expansion of the first and third plates.

[0041] The lower plate may further include a thermally conductive plug (139) within the second plate (137).

[0042] The above thermal conductive plug (139) has higher thermal conductivity than the second plate (137), and the thermal conductive plug (139) may have a lower thermal expansion rate than the second plate (137).

[0044] In addition, the power conversion device according to the embodiment may include a semiconductor package module including any one of the vapor chambers. Effects of the invention

[0045] According to the embodiment, by employing a metal adhesive layer, the problem of technical contradiction in which delamination occurs in the metal adhesive layer due to the difference in thermal expansion coefficients can be resolved while efficiently transferring heat generated from the electronic device to the top.

[0046] For example, referring to FIG. 2, the embodiment has a special technical effect in that the first adhesive layer (140) employs a metal adhesive layer containing a metal material to efficiently transfer heat generated from the electronic device to the upper side, while controlling the coefficient of thermal expansion of the lower metal plate (133) of the vapor chamber (130) in contact with the electronic device (150), thereby solving the problem of a technical contradiction in which delamination occurs in the metal adhesive layer due to the difference in the coefficient of thermal expansion.

[0047] In addition, according to the embodiment, when manufacturing the vapor chamber (130), a material is included that can reduce the difference in the coefficient of thermal expansion (CTE) at the surface in contact with the electronic element (150), and due to the reduction in the difference in the coefficient of thermal expansion, deformation between the electronic element and the vapor chamber (130) due to temperature changes is minimized, and there is a complex technical effect in which reliability and heat dissipation efficiency can be significantly improved by using a metal-based adhesive layer that has high hardness and thermal conductivity without delamination.

[0049] In addition, according to the embodiment, there is a complex technical effect in which heat generated from the electronic device is rapidly diffused to further improve heat dissipation performance, and the problem of warpage of the vapor chamber in contact with the electronic device is prevented, thereby further improving reliability.

[0050] For example, referring to FIG. 3, as the first plate (136) adjacent to the electronic element (150) in the vapor chamber (130) is formed thicker than the third plate (138), the heat generated from the electronic element (150) can be rapidly diffused, thereby further improving heat dissipation performance.

[0051] Additionally, as the first thickness (T1) of the first plate (136) is controlled to be greater than the third thickness (T3) of the third plate (138), the second plate (137) can be positioned so as to be offset in the upper region relative to the horizontal center within the lower metal plate (133). Accordingly, the coefficient of thermal expansion of the metal material positioned above the second plate (137) and the coefficient of thermal expansion of the metal material positioned below the second plate (137) can be positioned symmetrically with respect to the second plate (137). Therefore, the embodiment has the technical effect of preventing warpage of the vapor chamber (130) and preventing peeling of the first adhesive layer by ensuring that the coefficients of thermal expansion of the upper and lower parts of the vapor chamber (130) are symmetrical with respect to the second plate (137), thereby further improving reliability.

[0053] Also, referring to FIG. 4, the vapor chamber according to the second embodiment may further include a thermally conductive plug (139) within the second plate (137), thereby providing a composite technical effect of improving heat dissipation performance and reliability.

[0054] For example, the second plate (137) may include a thermally conductive plug (139) that fills a vertically penetrating hole, and the material of the thermally conductive plug (139) may be filled with a metal material having higher thermal conductivity than the material of the second plate (137).

[0055] Accordingly, heat generated from the electronic device can be efficiently transferred from the first plate (136) to the third plate (138) through the second plate (138) and the thermally conductive plug (139), and the second plate (137) of the vapor chamber has a composite material having a thermal expansion coefficient greater than that of the electronic device, thereby minimizing thermal deformation of the vapor chamber (130) due to the reduction in the difference in thermal expansion coefficients, so that reliability can be improved and heat dissipation performance can be further enhanced, thus providing a composite technical effect.

[0057] Also, referring to FIG. 6a, the embodiment (E) shows that the heat dissipation performance is significantly improved so that the temperature of the semiconductor chip is maintained at a lower level, and even when the temperature is raised for operation, it drops to a lower temperature more quickly.

[0058] In addition, when the example (E) and the comparative example (R) reach the same temperature during the operation of the CPU chip, the example (E) has a special technical effect of being able to exhibit higher performance and higher efficiency by maintaining the same operating temperature through highly efficient heat dissipation efficiency as shown in FIG. 6b and FIG. 6c, while also exhibiting a higher clock frequency and power consumption.

[0059] For example, referring to Fig. 6b, in the case of comparative example (R), the clock frequency of the CPU chip is lowered to extend the lifespan of the CPU chip because the heat dissipation efficiency is low, and in comparative example (R), the reduction in clock frequency is large, so there is a problem in that the performance of the CPU chip is significantly degraded.

[0060] On the other hand, in the case of Example (E), when applying a semiconductor package module including a vapor chamber according to the example, the heat dissipation performance is significantly improved, and since the reduction in the clock frequency of the CPU chip is almost non-existent or very small compared to Comparative Example (R), there is a special technical effect that allows the CPU chip's performance to be maximized.

[0061] Also, referring to FIG. 6c, in the case of comparative example (R), the heat dissipation efficiency is low, so the power of the CPU chip is reduced to extend the lifespan of the CPU chip. However, in comparative example (R), the reduction in processor power is very large, which causes a problem in that the performance of the CPU chip is significantly lowered.

[0062] On the other hand, Example (E) has a special technical effect of maintaining the high performance of the CPU chip because the heat dissipation performance is significantly improved when applied to a semiconductor package module including a vapor chamber, and the decrease in power consumption over time is much smaller than that of Comparative Example (R).

[0064] The technical effects of the embodiments are not limited to those described in this section and include those that can be understood through the description of the invention. Brief explanation of the drawing

[0065] FIG. 1a is a drawing of a semiconductor package module (10A) of a first comparative example including a vapor chamber that is studied internally. FIG. 1b is a drawing of a semiconductor package module (10B) of a second comparative example including a vapor chamber being studied internally. FIG. 1c is a photograph of a delamination problem (DP) in a semiconductor package module (10B) of the second comparative example. FIG. 2 is a cross-sectional view of a semiconductor package module including a vapor chamber for a semiconductor package module according to an embodiment. FIG. 3 is a detailed drawing of a vapor chamber for a semiconductor package module according to an embodiment of FIG. 2. FIG. 4 is a drawing showing a vapor chamber for a semiconductor package module according to a second embodiment. FIG. 5 is a drawing showing a semiconductor package module including a vapor chamber for a semiconductor package module according to a third embodiment. FIGS. 6a to 6c are graphs showing the package temperature, the operating frequency of the CPU chip, and the power consumption of the processor over time for the example (E) and the comparative example (R), respectively. Specific details for implementing the invention

[0066] Hereinafter, embodiments disclosed in this specification will be described in detail with reference to the attached drawings. The suffixes 'module' and 'part' for components used in the following description are assigned or used interchangeably for the sake of ease of drafting the specification and do not inherently possess distinct meanings or roles. Furthermore, the attached drawings are intended to facilitate an easy understanding of the embodiments disclosed in this specification, and the technical concepts disclosed in this specification are not limited by the attached drawings. Additionally, when an element such as a layer, region, or substrate is referred to as existing 'on' another component, this includes existing directly on the other element or having other intermediate elements existing between them.

[0068] (Example)

[0069] FIG. 2 is a cross-sectional view of a semiconductor package module including a vapor chamber for a semiconductor package module according to an embodiment. Hereinafter, the 'semiconductor package module including a vapor chamber for a semiconductor package module' will be abbreviated as 'semiconductor package module'.

[0070] Referring to FIG. 2, a semiconductor package module according to an embodiment may include a substrate (110), an electronic device (150), and a vapor chamber (130). Specifically, the substrate (110) may include at least one of a plurality of insulating layers, wiring layers, and via electrodes. The substrate (110) may be a semiconductor package substrate. The semiconductor package to which the embodiment is applied may be any one of FC-BGA (Flip Chip Ball Grid Array), CSP (Chip Scale Package), FC-CSP (Flip Chip-Chip Scale Package), POP (Package On Package), and SIP (System In Package), but is not limited thereto.

[0071] The above substrate (110) may further include an interposer substrate (not shown) to mount an electronic device (150) on the interposer substrate, but is not limited thereto.

[0072] Additionally, the electronic device (150) may be a semiconductor device. For example, the electronic device (150) may be a high-performance semiconductor such as an AI semiconductor, a processor for a data center, a power semiconductor for an electric vehicle inverter, etc., but is not limited thereto.

[0073] For example, the electronic device (150) may include a semiconductor device that is an active device or a passive device. The active device may be a semiconductor chip in the form of an integrated circuit (IC) in which hundreds to millions of devices are integrated into a single chip. Additionally, the semiconductor device may be a logic chip, a memory chip, etc. For example, the logic chip may be a graphics processor (GPU), a central processor (CPU), a digital signal processor, an encryption processor, a microprocessor, an analog-to-digital converter, etc.

[0074] In addition, the memory chip to which the embodiment is applied may be a stacked memory such as HBM. In addition, the memory chip may include volatile memory such as DRAM, non-volatile memory such as ROM, flash memory, etc.

[0075] In addition, the semiconductor package may be a smartphone, personal digital assistant, digital video camera, digital still camera, vehicle, high-performance server, network system, computer, monitor, tablet, laptop, netbook, television, video game, smart watch, automotive, etc. However, it is not limited to these, and it is obvious that it may be any other electronic device that processes data in addition to these.

[0076] Additionally, the electronic device (150) may be a power semiconductor comprising a drain electrode, a semiconductor epitaxial layer, a source electrode, and a gate electrode. For example, the epitaxial layer of the power semiconductor to which the embodiment is applied may include Si or SiC, but is not limited thereto. If the electronic device (150) is a full-wall semiconductor comprising Si or SiC, the coefficient of thermal expansion of the power semiconductor is 4.0 x 10 -6 / ℃ to 4.5 x 10 -6 It may be / ℃, but is not limited thereto.

[0077] The above electronic device (150) can be electrically connected to the substrate (110) through a connection part (155) including solder.

[0079] Next, the vapor chamber (130) may include an upper metal plate (131), a hollow structure (132), and a lower metal plate (133). The upper metal plate (131) and the lower metal plate (133) are bonded at both ends, and a hollow structure (132) may be placed between them. In FIG. 2, one side of the upper metal plate (131) is shown to have an incline, but is not limited thereto.

[0080] For example, the upper metal plate (131) of the vapor chamber (130) of the embodiment may be made of a material with excellent ductility such as Cu, so that the upper metal plate (131) can be bent and joined to the lower metal plate (133).

[0081] In addition, the vapor chamber (130) of another embodiment may have an intermediate metal plate (not shown) in which a hollow structure (132) is formed, and the intermediate metal plate may be interposed between an upper metal plate (131) and a lower metal plate (133) and then joined.

[0083] Referring further to FIG. 2, the lower metal plate (133) of the vapor chamber (130) of the embodiment may include a plurality of plates. Specifically, the lower metal plate (133) may include a first plate (136), a second plate (137), and a third plate (138) arranged sequentially in a vertical direction. The lower metal plate (133) may be formed through a metal bonding or sintering process.

[0084] Additionally, the first plate (136) and the third plate (138) may contain the same material. Also, the first plate (136) and the third plate (138) may contain the same material as the upper metal plate (131). For example, the first plate (136), the third plate (138), and the upper metal plate (131) may contain copper, but are not limited thereto. When the upper metal plate (131), the first plate, and the third plate (138) contain copper, the coefficient of thermal expansion is 17 × 10 -6 It can be / ℃.

[0085] Additionally, the second plate (137) may contain a material different from the first plate (136) and the third plate (138). Specifically, the second plate (137) may contain a metallic material or a ceramic material.

[0086] For example, if the second plate (137) contains a metal material, the coefficient of thermal expansion of the metal material of the second plate (137) may be smaller than the coefficient of thermal expansion of the metal material of the first plate (136) and the third plate (138).

[0087] Additionally, the coefficient of thermal expansion of the metal material of the second plate (137) may be greater than or equal to the coefficient of thermal expansion of the electronic element (150). Accordingly, the metal material of the second plate (137) has a coefficient of thermal expansion of 4.0 × 10 -6 / ℃ to 17 x 10 -6 It may be a metallic material within the range of / ℃, for example, the second plate (137) may include, but is not limited to, gold (Ag), iron (Fe), nickel (Ni), platinum (Pt), molybdenum (Mo), tungsten (W), etc. The second plate (137) may have a metal bond formed with the first plate (136) and the third plate (138).

[0088] Additionally, the second plate (137) may include a ceramic material, in which case the ceramic material of the second plate (137) has a coefficient of thermal expansion of 4.0 x 10 -6 / ℃ to 17 x 10 -6 The ceramic material may be within the / ℃ range, and for example, the second plate (137) may include inorganic materials such as Al2O3, ZrO2, ALN, Y2O3, but is not limited thereto.

[0089] Accordingly, the embodiment can reduce the difference in the coefficient of thermal expansion between the vapor chamber (130) and the electronic element (150) as the coefficient of thermal expansion of the second plate (137) of the lower metal plate (133) is smaller than the coefficient of thermal expansion of the first plate (136) and the third plate (138). Therefore, as the difference in the coefficient of thermal expansion between the vapor chamber (130) and the electronic element (150) is reduced, thermal deformation of the vapor chamber (130) and the electronic element (150) can be prevented.

[0090] Additionally, the embodiment includes a post (118) disposed on a substrate (110), and the post (118) may be disposed between the substrate (110) and the vapor chamber (130). Additionally, the post (118) may be disposed to overlap with an electronic element (150) in a horizontal direction.

[0091] The above post (118) and the above vapor chamber (130) can be bonded through a third adhesive layer (119). Additionally, the above post (118) may include a metal with high strength. The above post (118) can be in contact with both ends of the above vapor chamber (130) to prevent warpage of the above vapor chamber (130) and has the technical effect of protecting the electronic device (150) from external contaminants such as moisture and dust.

[0092] An embodiment includes a post (118) disposed on a substrate (110), and a vapor chamber (130) may be disposed on the post (118) and the electronic element (150), and the vapor chamber (130) may be disposed in contact with the electronic element (150).

[0094] The embodiment has a special technical effect in that the first adhesive layer (140) employs a metal adhesive layer containing a metal material to efficiently transfer heat generated from the electronic device to the upper side, while controlling the coefficient of thermal expansion of the third plate (138) of the vapor chamber (130) in contact with the electronic device (150), thereby resolving the problem of delamination caused by cracks or voids in the metal adhesive layer due to the difference in the coefficient of thermal expansion.

[0095] For example, the first adhesive layer (140) may include a Sn alloy adhesive layer, an In alloy adhesive layer, an Al alloy adhesive layer, etc., but is not limited thereto. For example, the first adhesive layer (140) may include a SnxAgyCuz alloy adhesive layer, an InxAgy alloy adhesive layer, etc., but is not limited thereto.

[0096] In addition, according to the embodiment, when manufacturing the vapor chamber (130), a material is included that can reduce the difference in the coefficient of thermal expansion (CTE) at the surface in contact with the electronic element (150), and due to the reduction in the difference in the coefficient of thermal expansion, thermal deformation between the electronic element and the vapor chamber (130) due to temperature changes is minimized, and there is a complex technical effect in which reliability and heat dissipation efficiency can be significantly improved by using a metal-based adhesive layer that has high hardness and thermal conductivity without delamination.

[0098] Next, FIG. 3 is a detailed drawing of a vapor chamber (130) for a semiconductor package module according to an embodiment of FIG. 2. Referring to FIG. 3, the vapor chamber (130) may include an upper metal plate (131), a hollow structure (132), and a lower metal plate (133). In FIG. 3, the hollow structure (132) is shown as empty, but it may include a plurality of trench structures or a plurality of holes, and the plurality of trench structures or a plurality of holes may be filled with other materials.

[0099] For example, an operating fluid inlet may be formed on one side of the hollow structure (132), an operating fluid may be injected into the hollow structure, and the fluid inlet may be closed. The operating fluid may be acetone, methanol, ethanol, or ultrapure water (DI-water), but is not limited thereto.

[0100] According to an embodiment, as heat generated from an electronic element (150) is efficiently transferred to a lower metal plate (133) through a first adhesive layer (140), which is a metal adhesive layer, the working fluid can vaporize and absorb latent heat of vaporization, and then move toward the upper metal plate (131) and condense into a liquid while releasing latent heat of vaporization. The condensed working fluid can be absorbed into a hollow trench structure and moved toward the lower metal plate (133).

[0102] Additionally, in an embodiment, the lower metal plate (133) may include a first plate (136), a second plate (137) disposed on the first plate (136), and a third plate (138) disposed on the second plate (137). The second plate (137) may be interposed between the first plate (136) and the third plate (138).

[0103] The upper metal plate (131) and the lower metal plate (133) may contain the same material. Additionally, the first plate (136) and the third plate (138) may contain the same material. The upper metal plate (131), the first plate (136), and the third plate (138) may contain the same metal material, and may be, for example, copper (Cu), but are not limited thereto.

[0105] According to the embodiment, there is a complex technical effect in which heat generated from the electronic device is rapidly diffused to further improve heat dissipation performance, and the problem of warpage of the vapor chamber in contact with the electronic device is prevented, thereby further improving reliability.

[0106] For example, as shown in FIG. 3, the first thickness (T1) of the first plate (136) in the lower metal plate (133) may be greater than the third thickness (T3) of the third plate (138). Also, the first thickness (T1) of the first plate (136) may be greater than the second thickness (T2) of the second plate (137).

[0107] Additionally, the second plate (137) can be positioned so as to be offset in the upper area relative to the horizontal center within the lower metal plate (133).

[0108] The second plate (137) may be positioned so as to be adjacent to the upper surface rather than the lower surface of the lower metal plate (133). Accordingly, the embodiment has the technical effect of further improving heat dissipation performance by rapidly dissipating heat generated from the electronic element (150) as the first plate (136) adjacent to the electronic element (150) is formed thicker than the third plate (138).

[0109] Additionally, the first thickness (T1) of the first plate (136) may be greater than the third thickness (T3) of the third plate (138) so that the coefficient of thermal expansion of the metal material placed above the second plate (137) and the coefficient of thermal expansion of the metal material placed below the second plate (137) are symmetrical with respect to the second plate (137), which has a relatively large coefficient of thermal expansion. Accordingly, the embodiment has the technical effect of preventing warpage of the vapor chamber (130) and preventing peeling of the first adhesive layer by ensuring that the coefficients of thermal expansion of the upper and lower parts of the vapor chamber (130) are symmetrical with respect to the second plate (137), thereby further improving reliability.

[0111] Next, FIG. 4 is a drawing showing a vapor chamber for a semiconductor package module according to a second embodiment. Referring to FIG. 4, the lower metal plate (133) of the vapor chamber (130) may include a first plate (136), a second plate (137) disposed on the first plate (136), and a third plate (138) disposed on the second plate (137). The second plate (137) may be interposed between the first plate (136) and the third plate (138).

[0112] Meanwhile, the vapor chamber according to the second embodiment may further include a thermally conductive plug (139) within the second plate (137), thereby providing a composite technical effect of improving heat dissipation performance and reliability.

[0113] For example, a thermally conductive plug (139) disposed within the second plate (137) may be disposed to penetrate the second plate (137). The second plate (137) may include a grid shape having vertically penetrating holes, but is not limited thereto. Additionally, the second plate (137) may include a thermally conductive plug (139) that fills the vertically penetrating holes, but is not limited thereto.

[0114] The above thermal conductive plug (139) may be in contact with the upper surface of the first plate (136). Additionally, the above thermal conductive plug (139) may be in contact with the lower surface of the third plate (138). Furthermore, the above thermal conductive plug (139) may include a plurality of units spaced apart in the horizontal direction within the second plate (137). The thickness of the above thermal conductive plug (139) may be the same as the second thickness (T2) of the second plate (137).

[0115] The thermal conductive plug (139) material filling the hole of the second plate (137) may be filled with a metal material having higher thermal conductivity than the material of the second plate (137). For example, the thermal conductive plug (139) may be filled with the same material as the first plate (136) or the third plate (138), but is not limited thereto. For example, the thermal conductive plug (139) may be filled with copper (Cu). Accordingly, heat generated from the electronic device can be efficiently transferred from the first plate (136) to the third plate (138) through the second plate (138) and the thermal conductive plug (139). Therefore, there is a technical effect in that heat conduction is improved from the first plate (136) to the third plate (138), thereby further enhancing heat dissipation performance.

[0116] In addition, according to the second embodiment, the second plate (137) of the vapor chamber has a composite material having a thermal expansion coefficient greater than that of the electronic element, thereby minimizing the shape of the vapor chamber (130) due to the reduction in the difference in thermal expansion coefficients, and thus providing a composite technical effect in which reliability is improved and heat dissipation performance is further enhanced.

[0117] Next, FIG. 5 is a drawing showing a semiconductor package module including a vapor chamber according to a third embodiment.

[0118] FIG. 5 may further include a second vapor chamber (180) and a heat sink (190) in the semiconductor package module of FIG. 2. Referring to FIG. 5, the second vapor chamber (180) may be disposed on a vapor chamber (130). The vapor chamber (130) and the second vapor chamber (180) may be bonded through a second adhesive layer (170). Additionally, the second vapor chamber (180) may be larger than the horizontal width of the vapor chamber (130). The second adhesive layer (170) may include a metal adhesive layer, but is not limited thereto.

[0119] Additionally, a heat sink (190) may be placed on the second steam chamber (180). Accordingly, the third embodiment has the technical effect of improving heat dissipation performance by spreading the heat transferred through the steam chamber (130) to a wider area.

[0120] The second steam chamber (180) described above may adopt the technical features of the steam chamber (130) described above. For example, the second steam chamber (180) may include a fourth plate, a fifth plate, and a sixth plate arranged in a vertical direction, and a hollow structure may be disposed in the fifth plate. The fourth plate may be formed to be thicker than the thickness of the fifth plate and the sixth plate, respectively, but is not limited thereto.

[0122] FIGS. 6a to 6c are graphs showing the package temperature, the operating frequency of the CPU chip, and the power consumption of the processor over time for the example (E) and the comparative example (R), respectively.

[0123] The example (E) and comparative example (R) may be, for example, a CPU chip, but are not limited thereto. The CPU chip of the example (E) of FIGS. 6a and 6b may include a semiconductor package module including a vapor chamber according to the examples of FIGS. 2 to 5.

[0124] When the CPU chip of Example (E) is applied to a semiconductor package module including a vapor chamber according to the embodiments of FIGS. 2 to 5, as shown in FIG. 6a, the heat dissipation performance is significantly improved so that the temperature of the semiconductor chip is maintained at a lower level, and even when the temperature rises for operation, it shows the effect of dropping to a lower temperature more quickly.

[0125] Specifically, when the CPU chip is running, the temperature of the package increases rapidly due to the heat generated by the CPU chip. Subsequently, when the CPU chip stops running, the temperature of the semiconductor package module decreases, but when the CPU chip is restarted, it reaches the peak temperature again.

[0126] Meanwhile, referring to FIG. 6a, it can be seen that in the case of Example (E), the temperature decreases faster than in Comparative Example (R) when the CPU chip is stopped from operating due to the application of a semiconductor package module including a vapor chamber according to the example. In addition, while Example (E) and Comparative Example (R) reach the same temperature when the CPU chip is operated, Example (E) has a special technical effect of exhibiting higher performance and higher efficiency by maintaining the same operating temperature through highly efficient heat dissipation efficiency as shown in FIG. 6b and FIG. 6c, while also exhibiting a higher clock frequency and power consumption.

[0127] In addition, according to the embodiment, a more effective heat dissipation structure in contact with the semiconductor provides a significant effect on heat diffusion, and even if the size or performance of the subsequent heat dissipation structure is small or low, it can provide the same level of final heat dissipation performance, thereby having the effect of reducing overall costs.

[0129] Specifically, referring to FIG. 6b, when operating the CPU chip, the temperature of the CPU chip rises depending on the operating time, so there is an underclock function that forcibly lowers the clock frequency of the CPU chip to prevent the chip from being damaged by further rising temperature.

[0130] For example, in the case of Comparative Example (R), the clock frequency of the CPU chip is lowered to extend the lifespan of the CPU chip due to low heat dissipation efficiency; however, in Comparative Example (R), the reduction in clock frequency is large, which causes a problem in that the performance of the CPU chip is significantly degraded.

[0131] On the other hand, in the case of Example (E), when a semiconductor package module including a vapor chamber according to the example is applied, the heat dissipation performance is significantly improved, and since the reduction in the clock frequency of the CPU chip is almost non-existent or very small compared to Comparative Example (R), there is a special technical effect that allows the CPU chip's performance to be maximized.

[0132] Also, referring to Fig. 6c, as the temperature rises over time when the CPU chip is running, the power consumption is forcibly lowered to suppress the temperature rise.

[0133] For example, in the case of Comparative Example (R), the power of the CPU chip is lowered to extend the lifespan of the CPU chip due to low heat dissipation efficiency, and in Comparative Example (R), the reduction in processor power is so large that there is a problem in that the performance of the CPU chip is significantly lowered.

[0134] On the other hand, Example (E) has a special technical effect of maintaining the high performance of the CPU chip because the heat dissipation performance is significantly improved when applied to a semiconductor package module including a vapor chamber, and the decrease in power consumption over time is much smaller than that of Comparative Example (R).

[0136] Although the present invention has been described above with reference to embodiments thereof, those skilled in the art will readily understand that various modifications and changes can be made to the present invention without departing from the spirit and scope of the invention as described in the following claims. Explanation of the symbols

[0137] 60: Metal plate 70, 170: Second adhesive layer 80, 180: Vapor chamber 90, 190: Heat sink 110: Substrate 118: Post 119: Third adhesive layer 130: Vapor chamber 131: Upper metal plate 132: Hollow structure 133: Lower metal plate 136: First plate 137: Second plate 138: Third plate 139: Hole 140: Adhesive layer 150: Electronic component 155: Connection part E: Example R: Comparative Example

Claims

Claim 1 A vapor chamber for a semiconductor package module comprises a lower metal plate, a hollow structure, and an upper metal plate arranged sequentially; wherein the lower metal plate comprises a first plate, a second plate, and a third plate arranged sequentially, and the coefficient of thermal expansion of the second plate is smaller than the coefficient of thermal expansion of the first plate or the third plate. Claim 2 A vapor chamber for a semiconductor package module according to claim 1, wherein the thickness of the first plate is greater than the thickness of the third plate. Claim 3 In paragraph 2, the second plate is a vapor chamber for a semiconductor package module, positioned to be closer to the upper surface than to the lower surface of the lower metal plate. Claim 4 A vapor chamber for a semiconductor package module according to claim 1, wherein the lower plate further comprises a thermally conductive plug within the second plate. Claim 5 A vapor chamber for a semiconductor package module according to claim 4, wherein the thermally conductive plug has higher thermal conductivity than the second plate and the thermally conductive plug has a lower coefficient of thermal expansion than the second plate. Claim 6 A semiconductor package module comprising a substrate; an electronic device disposed on the substrate; and a vapor chamber disposed on the electronic device; wherein the vapor chamber comprises a lower metal plate, a hollow structure, and an upper metal plate disposed sequentially, and the lower metal plate comprises a first plate, a second plate, and a third plate disposed sequentially in an upward direction, and the coefficient of thermal expansion of the second plate is smaller than the coefficient of thermal expansion of the first plate or the third plate. Claim 7 A semiconductor package module comprising a vapor chamber, wherein, in claim 6, it further comprises a first adhesive layer disposed between the electronic element and the vapor chamber, and the first adhesive layer comprises a metal material. Claim 8 A semiconductor package module including a vapor chamber, wherein, in claim 6, the coefficient of thermal expansion of the second plate is greater than or equal to the coefficient of thermal expansion of the electronic device. Claim 9 A semiconductor package module comprising a vapor chamber, wherein, in claim 6, the thickness of the first plate is greater than the thickness of the third plate, and the second plate is positioned to be adjacent to the upper surface rather than the lower surface of the lower metal plate. Claim 10 In paragraph 6, the second plate is 4.0 x 10 -6 / ℃ to 17 x 10 -6 A semiconductor package module comprising a vapor chamber including a metallic or ceramic material having a coefficient of thermal expansion within the / ℃ range. Claim 11 A semiconductor package module comprising a vapor chamber, wherein the lower plate further comprises a thermally conductive plug within the second plate, the thermally conductive plug has higher thermal conductivity than the second plate, and the thermally conductive plug has a lower coefficient of thermal expansion than the second plate. Claim 12 A semiconductor package module comprising a vapor chamber, wherein the vapor chamber comprises: a substrate; an electronic device disposed on the substrate; a vapor chamber disposed on the electronic device; and a first adhesive layer disposed between the electronic device and the vapor chamber, wherein the vapor chamber comprises a lower metal plate, a hollow structure, and an upper metal plate disposed sequentially, and the lower metal plate comprises a first plate, a second plate, and a third plate disposed sequentially in an upward direction, and the thickness of the first plate is thicker than the thickness of the third plate. Claim 13 A semiconductor package module comprising a vapor chamber, wherein, in claim 12, a first adhesive layer disposed between the electronic element and the vapor chamber, the first adhesive layer comprises a metal material, and the coefficient of thermal expansion of the second plate is smaller than the coefficients of thermal expansion of the first and third plates. Claim 14 A semiconductor package module comprising a vapor chamber, wherein the lower plate further comprises a thermally conductive plug within the second plate, the thermally conductive plug has a higher thermal conductivity than the second plate, and the thermally conductive plug has a lower coefficient of thermal expansion than the second plate. Claim 15 A power conversion device comprising a semiconductor package module including a vapor chamber according to any one of claims 1 to 14.

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