Light emitting element, electronic device including the same, and manufacturing method of the light emitting element

Abstract

A method for manufacturing a light-emitting device according to one embodiment of the present invention comprises the steps of: forming a hole transport region by providing a mixture comprising a hole transport material and a first fluorine source comprising fluorine on a first electrode; forming a light-emitting layer comprising quantum dots on the hole transport region; forming an electron transport region on the light-emitting layer; and forming a second electrode on the electron transport region, wherein in the step of forming the light-emitting layer, at least a portion of the first fluorine source included in the hole transport region moves to the light-emitting layer.

Description

Technology Field

[0001] The present invention relates to a light-emitting element, an electronic device including the same, and a method for manufacturing a light-emitting element. Background Technology

[0002] Various display devices used in multimedia devices such as televisions, mobile phones, tablet computers, navigation systems, and game consoles are being developed. These display devices utilize so-called self-emissive display elements that realize a display by causing light-emitting materials containing organic compounds to emit light.

[0003] In addition, development of light-emitting devices using quantum dots as light-emitting materials is underway to improve the color reproduction of display devices, and there is a need to improve the luminous efficiency and lifespan of light-emitting devices using quantum dots. The problem to be solved

[0004] The objective of the present invention is to provide a light-emitting device with improved luminous efficiency and device lifespan.

[0005] The objective of the present invention is to provide an electronic device having excellent display quality characteristics, including quantum dots exhibiting enhanced luminescence characteristics.

[0006] Another objective of the present invention is to provide a method for manufacturing a light-emitting device with improved luminous efficiency and device lifespan. means of solving the problem

[0007] A method for manufacturing a light-emitting device according to one embodiment of the present invention comprises the steps of: forming a hole transport region by providing a mixture comprising a hole transport material and a first fluorine source comprising fluorine on a first electrode; forming a light-emitting layer comprising quantum dots on the hole transport region; forming an electron transport region on the light-emitting layer; and forming a second electrode on the electron transport region, wherein in the step of forming the light-emitting layer, at least a portion of the first fluorine source included in the hole transport region moves to the light-emitting layer.

[0008] When the concentration of fluorine in the hole transport region is defined as a first concentration prior to the step of forming the light-emitting layer, and the concentration of fluorine in the hole transport region is defined as a second concentration after the step of forming the light-emitting layer, the second concentration may be smaller than the first concentration.

[0009] The above quantum dot may include a core, a shell surrounding the core, and fluoride ions bonded to the surface of at least one of the core and the shell.

[0010] The method further includes a step of preparing the quantum dots prior to the step of forming the light-emitting layer, and the step of preparing the quantum dots may include a step of forming the core, a step of forming the shell, and a step of reacting at least one surface of the core and the shell with hydrofluoric acid.

[0011] The step of forming the hole transport region described above can be performed through an inkjet process.

[0012] The step of forming the hole transport region may include the step of forming a preliminary hole transport region by providing the mixture comprising the hole transport material and the first fluorine source onto the first electrode, and the step of drying or heat-treating the preliminary hole transport region.

[0013] The step of forming the light-emitting layer can be performed through an inkjet process.

[0014] The step of forming the light-emitting layer may include the step of forming a preliminary light-emitting layer by providing a quantum dot composition containing the quantum dots on the hole transport region, and the step of drying or heat-treating the preliminary light-emitting layer.

[0015] The above quantum dot composition may further include a second fluorine source.

[0016] The step of forming the electron transport region may include the step of forming a preliminary electron transport region by providing an electron transport composition containing an electron transport material on the light-emitting layer, and the step of drying or heat-treating the preliminary electron transport region.

[0017] The above electron transport material may include a metal oxide.

[0018] A light-emitting element according to one embodiment of the present invention comprises a first electrode, a second electrode disposed on the first electrode, a light-emitting layer disposed between the first electrode and the second electrode and including quantum dots, and a hole transport region disposed between the first electrode and the light-emitting layer, wherein the light-emitting layer and the hole transport region may each include a first fluorine source comprising fluorine.

[0019] The hole transport region comprises a hole injection layer disposed on the first electrode, and a hole transport layer disposed on the hole injection layer and in contact with the light-emitting layer, and the hole transport layer may include the first fluorine source.

[0020] The above quantum dot may include a core and a shell surrounding the core.

[0021] The above quantum dot may further include fluoride ions bonded to the surface of at least one of the core and the shell.

[0022] The above quantum dots may further include ligands that are bound to the shell surface.

[0023] It may further include an electron transport region disposed between the second electrode and the light-emitting layer and comprising a metal oxide.

[0024] An electronic device according to one embodiment of the present invention comprises a circuit layer and a display element layer comprising a pixel defining film disposed on the circuit layer and having a light-emitting element and a pixel opening defined therein, wherein the light-emitting element comprises a first electrode, a second electrode disposed on the first electrode, a light-emitting layer disposed between the first electrode and the second electrode and including a quantum dot, and a hole transport region disposed between the first electrode and the light-emitting layer, and wherein the light-emitting layer and the hole transport region each comprise a first fluorine source comprising fluorine.

[0025] When the concentration of fluorine in the light-emitting layer measured before voltage is applied to the light-emitting element is set as a reference concentration, the concentration of fluorine in the light-emitting layer after voltage is applied to the light-emitting element can gradually increase from the reference concentration.

[0026] The light-emitting element comprises a first light-emitting element including a first light-emitting layer that emits blue light, a second light-emitting element including a second light-emitting layer that emits colored light, and a third light-emitting element including a third light-emitting layer that emits red light, and at least one of the first light-emitting layer, the second light-emitting layer, and the third light-emitting layer may include the quantum dot and the first fluorine source. Effects of the invention

[0027] A light-emitting device of one embodiment includes a light-emitting layer containing a fluorine source and a hole transport region, each of which can enhance the passivation effect on quantum dots included in the light-emitting layer.

[0028] An electronic device of one embodiment may include a light-emitting element comprising quantum dots exhibiting improved light-emitting characteristics, and may exhibit excellent display quality.

[0029] A method for manufacturing a light-emitting device according to one embodiment can improve the passivation effect on quantum dots included in the light-emitting layer by moving a fluorine source from a hole transport region to the light-emitting layer during the step of forming the light-emitting layer. Accordingly, a light-emitting device having high luminous efficiency and improved lifetime characteristics can be provided. Brief explanation of the drawing

[0030] FIG. 1 is a block diagram of an electronic device according to one embodiment. FIG. 2 is a schematic diagram of an electronic device according to one embodiment. FIG. 3 is a perspective view of a display module according to one embodiment of the present invention. FIG. 4 is a cross-sectional view of a display module according to one embodiment of the present invention corresponding to the line I-I' of FIG. 3. FIG. 5 is a plan view showing a display module according to one embodiment of the present invention. FIG. 6 is a cross-sectional view of a display module according to one embodiment of the present invention. FIG. 7a is a cross-sectional view of a light-emitting element according to one embodiment of the present invention. FIG. 7b is a cross-sectional view showing a part of the configuration of a light-emitting element according to one embodiment of the present invention. FIG. 8 is a cross-sectional view of a light-emitting element according to one embodiment of the present invention. FIG. 9 is a flowchart illustrating a method for manufacturing a light-emitting element according to one embodiment of the present invention. FIGS. 10a to 10i are schematic drawings illustrating some of the steps of a method for manufacturing a light-emitting element according to one embodiment of the present invention. FIG. 11a is a schematic diagram illustrating the change over time of quantum dots included in the light-emitting element of an example. FIG. 11b is a schematic diagram illustrating the change over time of quantum dots included in the light-emitting element of a comparative example. Specific details for implementing the invention

[0031] The present invention is capable of various modifications and may take various forms, and specific embodiments are illustrated in the drawings and described in detail in the text. However, this is not intended to limit the invention to the specific disclosed forms, and it should be understood that the invention includes all modifications, equivalents, and substitutions that fall within the spirit and scope of the invention.

[0032] In this specification, where a component (or region, layer, part, etc.) is described as being "on," "connected," or "combined" with another component, it means that it may be directly placed / connected / combined with the other component, or that a third component may be placed between them.

[0033] Meanwhile, in the present application, "direct placement" may mean that there are no additional layers, films, regions, plates, etc. added between a part such as a layer, film, region, or plate and another part. For example, "direct placement" may mean that two layers or two members are placed without using additional members such as adhesive members between them.

[0034] Identical reference numerals denote identical components. Additionally, in the drawings, the thicknesses, proportions, and dimensions of the components are exaggerated for the effective illustration of the technical content. "And / or" includes all one or more combinations that the associated components may define.

[0035] Terms such as "first," "second," etc., may be used to describe various components, but said components should not be limited by said terms. These terms are used solely for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be named the second component, and similarly, the second component may be named the first component. A singular expression includes a plural expression unless the context clearly indicates otherwise.

[0036] Additionally, terms such as "below," "lower side," "above," and "upper side" are used to describe the relationships between the components depicted in the drawings. These terms are relative concepts and are described based on the directions indicated in the drawings.

[0037] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as generally understood by those skilled in the art to which the present invention pertains. Furthermore, terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an overly ideal or overly formal sense unless explicitly defined herein.

[0038] Terms such as "include" or "have" are intended to indicate the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0039] Meanwhile, in this specification, "substituted or unsubstituted" may mean that it is substituted or unsubstituted with one or more substituents selected from the group consisting of deuterium atoms, halogen atoms, cyano groups, nitro groups, amino groups, silyl groups, oxy groups, thio groups, amine groups, sulfinyl groups, sulfonyl groups, carbonyl groups, boron groups, phosphine groups, phosphine oxide groups, phosphine sulfide groups, alkyl groups, alkenyl groups, alkynyl groups, hydrocarbon ring groups, aryl groups, and heterocyclic groups. Additionally, each of the substituents exemplified above may be substituted or unsubstituted. For example, a biphenyl group may be interpreted as an aryl group, or as a phenyl group substituted with a phenyl group.

[0040] In this specification, examples of halogen atoms include fluorine atoms, chlorine atoms, bromine atoms, or iodine atoms.

[0041] In this specification, the alkyl group may be straight-chain, branched-chain, or cyclic. The number of carbon atoms in the alkyl group is 1 or more and 60 or less, 1 or more and 50 or less, 1 or more and 30 or less, 1 or more and 20 or less, 1 or more and 10 or less, or 1 or more and 6 or less. Examples of alkyl groups include methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, s-butyl group, t-butyl group, i-butyl group, 2-ethylbutyl group, 3,3-dimethylbutyl group, n-pentyl group, i-pentyl group, neopentyl group, t-pentyl group, 1-methylpentyl group, 3-methylpentyl group, 2-ethylpentyl group, 4-methyl-2-pentyl group, n-hexyl group, 1-methylhexyl group, 2-ethylhexyl group, 2-butylhexyl group, n-heptyl group, 1-methylheptyl group, 2,2-dimethylheptyl group, 2-ethylheptyl group, 2-butylheptyl group, n-octyl group, t-octyl group, 2-ethyloctyl group, 2-butyloctyl group, 2-hexyloctyl group. 3,7-dimethyloctyl group, n-nonyl group, n-decyl group, adamantyl group, 2-ethyldecyl group, 2-butyldecyl group, 2-hexyldecyl group, 2-octyldecyl group, n-undecyl group, n-dodecyl group, 2-ethyldodecyl group, 2-butyldodecyl group, 2-hexyldodecyl group, 2-octyldodecyl group, n-tridecyl group, n-tetradecyl group, n-pentadecyl group, n-hexadecyl group, 2-ethylhexadecyl group, 2-butylhexadecyl group, 2-hexylhexadecyl group, 2-octylhexadecyl group, n-heptadecyl group, n-octadecyl group, n-nonadecyl group, n-icosyl group, 2-ethylicosyl group, 2-butylicosyl group, There are, but are not limited to, 2-hexylicosyl group, 2-octylicosyl group, n-henicosyl group, n-docosyl group, n-tricosyl group, n-tetracosyl group, n-pentacosyl group, n-hexacosyl group, n-heptacosyl group, n-octacosyl group, n-nonacosyl group, n-triacontyl group, cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, 4-methylcyclohexyl group, 4-t-butylcyclohexyl group, cycloheptyl group, cyclooctyl group, cyclononyl group, cyclodecyl group, norbornyl group, 1-adamantyl group, 2-adamantyl group, isobornyl group, bicycloheptyl group, etc.

[0042] In this specification, an alkenyl group refers to a hydrocarbon group comprising one or more carbon double bonds at the middle or terminal of an alkyl group having two or more carbon atoms. The alkenyl group may be straight or branched. The number of carbon atoms is not particularly limited, but is 2 or more and 60 or less, 2 or more and 30 or less, 2 or more and 20 or less, or 2 or more and 10 or less. Examples of alkenyl groups include, but are not limited to, vinyl groups, 1-butenyl groups, 1-pentenyl groups, 1,3-butadienyl aryl groups, styrenyl groups, styrylvinyl groups, etc.

[0043] In this specification, an alkynyl group refers to a hydrocarbon group comprising one or more carbon triple bonds at the middle or terminal of an alkyl group having two or more carbon atoms. The alkynyl group may be straight or branched. The number of carbon atoms is not particularly limited, but is 2 to 30, 2 to 20, or 2 to 10. Specific examples of alkynyl groups may include, but are not limited to, ethinyl groups, propynyl groups, etc.

[0044] In this specification, a hydrocarbon ring group refers to any functional group or substituent derived from an aliphatic hydrocarbon ring. The hydrocarbon ring group may be a saturated hydrocarbon ring group having 5 to 20 carbon atoms forming the ring.

[0045] In this specification, an aryl group refers to any functional group or substituent derived from an aromatic hydrocarbon ring. The aryl group may be a monocyclic aryl group or a polycyclic aryl group. The number of ring-forming carbon atoms in the aryl group may be 6 or more and 60 or less, 6 or more and 30 or less, 6 or more and 20 or less, or 6 or more and 15 or less. Examples of aryl groups may include, but are not limited to, phenyl groups, naphthyl groups, fluorenyl groups, anthracenyl groups, phenanthryl groups, biphenyl groups, terphenyl groups, quarterphenyl groups, quinquephenyl groups, sexphenyl groups, triphenylenyl groups, pyrenyl groups, benzofluoranthenyl groups, crisenyl groups, etc.

[0046] In this specification, a heterocyclic group refers to any functional group or substituent derived from a ring comprising one or more of B, O, N, P, Si, and S as heteroatoms. Heterocyclic groups include aliphatic heterocyclic groups and aromatic heterocyclic groups. Aromatic heterocyclic groups may be heteroaryl groups. Aliphatic heterocyclic groups and aromatic heterocyclic groups may be monocyclic or polycyclic.

[0047] In this specification, a heterocyclic group may include one or more of B, O, N, P, Si, Se, and S as heteroatoms. If the heterocyclic group includes two or more heteroatoms, the two or more heteroatoms may be identical or different from each other. The heterocyclic group may be a monocyclic heterocyclic group or a polycyclic heterocyclic group, and is a concept that includes a heteroaryl group. The number of ring-forming carbons of the heterocyclic group may be 2 or more and 60 or less, 2 or more and 30 or less, 2 or more and 20 or less, or 2 or more and 10 or less.

[0048] In this specification, the aliphatic heterocyclic group may include one or more of B, O, N, P, Si, Se, and S as heteroatoms. The number of ring-forming carbon atoms in the aliphatic heterocyclic group may be 2 or more and 60 or less, 2 or more and 30 or less, 2 or more and 20 or less, or 2 or more and 10 or less. Examples of the aliphatic heterocyclic group include, but are not limited to, oxirane groups, thiran groups, pyrrolidine groups, piperidine groups, tetrahydrofuran groups, tetrahydrothiophene groups, thian groups, tetrahydropyran groups, 1,4-dioxane groups, etc.

[0049] In this specification, the heteroaryl group may include one or more of B, O, N, P, Si, Se, and S as heteroatoms. If the heteroaryl group includes two or more heteroatoms, the two or more heteroatoms may be identical or different from each other. The heteroaryl group may be a monocyclic heterocyclic group or a polycyclic heterocyclic group. The number of ring-forming carbons in the heteroaryl group may be 2 or more and 60 or less, 2 or more and 30 or less, 2 or more and 20 or less, or 2 or more and 10 or less. Examples of heteroaryl groups include thiophene group, furan group, pyrrole group, imidazole group, pyridine group, bipyridine group, pyrimidine group, triazine group, triazole group, acryl group, pyridazine group, pyrazinyl group, quinoline group, quinazolin group, quinoxaline group, phenoxazine group, phthalazine group, pyridopyrimidine group, pyridopyrazine group, pyrazinopyrazine group, isoquinoline group, indole group, carbazole group, N-arylcarbazole group, N-heteroarylcarbazole group, N-alkylcarbazole group, benzoxazole group, benzimidazole group, benzothiazole group, benzocarbazole group, benzothiophen group, dibenzothiophen group, thienothiophene group, benzofuran group, phenanthroline group, thiazole group, There are isooxazole groups, oxazole groups, oxadiazole groups, thiadiaazole groups, phenothiazine groups, dibenzosilol groups and dibenzofuran groups, but are not limited to these.

[0050] In this specification, silyl groups include alkyl silyl groups and aryl silyl groups. Examples of silyl groups include, but are not limited to, trimethylsilyl groups, triethylsilyl groups, t-butyldimethylsilyl groups, vinyldimethylsilyl groups, propyldimethylsilyl groups, triphenylsilyl groups, diphenylsilyl groups, phenylsilyl groups, etc.

[0051] In this specification, the number of carbon atoms in the carbonyl group is not particularly limited, but may be 1 to 40 or fewer, 1 to 30 or fewer, or 1 to 20 or fewer. For example, it may have the following structure, but is not limited thereto.

[0052]

[0053] In this specification, the number of carbon atoms in the sulfinyl group and the sulfonyl group is not particularly limited, but may be 1 or more and 30 or less. The sulfinyl group may include an alkyl sulfinyl group and an aryl sulfinyl group. The sulfonyl group may include an alkyl sulfonyl group and an aryl sulfonyl group.

[0054] In this specification, the thio group may include alkyl thio groups and aryl thio groups. The thio group may mean that a sulfur atom is bonded to the alkyl or aryl group defined above. Examples of thio groups include, but are not limited to, methyl thio group, ethyl thio group, propyl thio group, pentyl thio group, hexyl thio group, octyl thio group, dodecyl thio group, cyclopentyl thio group, cyclohexyl thio group, phenyl thio group, naphthyl thio group, etc.

[0055] In this specification, an oxy group may refer to an alkyl group or aryl group defined above in which an oxygen atom is bonded. An oxy group may include an alkoxy group and an aryl oxy group. An alkoxy group may be a straight chain, a branched chain, or a cyclic chain. The number of carbon atoms in an alkoxy group is not particularly limited, but may be, for example, 1 or more and 20 or less, or 1 or more and 10 or less. Examples of oxy groups include, but are not limited to, methoxy, ethoxy, n-propoxy, isopropoxy, butoxy, pentyloxy, hexyloxy, octyloxy, nonyloxy, decyloxy, benzyloxy, etc.

[0056] In this specification, a boron group may mean that a boron atom is bonded to the alkyl group or aryl group defined above. Boron groups include alkyl boron groups and aryl boron groups. Examples of boron groups include, but are not limited to, dimethyl boron groups, diethyl boron groups, t-butylmethyl boron groups, diphenyl boron groups, phenyl boron groups, etc.

[0057] In this specification, the number of carbon atoms in the amine group is not particularly limited, but may be 1 or more and 30 or less. The amine group may include alkyl amine groups and aryl amine groups. Examples of amine groups include methylamine groups, dimethylamine groups, phenylamine groups, diphenylamine groups, naphthylamine groups, 9-methyl-anthracenylamine groups, etc., but are not limited thereto.

[0058] In this specification, among alkyl thio groups, alkyl sulfoxy groups, alkyl aryl groups, alkyl amino groups, alkyl boron groups, alkyl silyl groups, and alkyl amine groups, the alkyl groups are the same as the examples of alkyl groups described above.

[0059] In this specification, the aryl group among the aryloxy group, arylthio group, arylsulfoxy group, arylamino group, arylboron group, arylsilyl group, and arylamine group is the same as the examples of aryl groups described above.

[0060] In this specification, an acyl halate may mean a substituent having the structure "-C(=O)R". Here, R is a halogen atom. That is, R is F, Cl, Br, or I.

[0061] In this specification, a hydroxyl group may mean a substituent having a "-OH" structure.

[0062] In this specification, a thiol group may mean a substituent having a "-SH" structure.

[0063] In this specification, phosphine groups may include alkyl phosphine groups and aryl phosphine groups. A phosphine group may mean that a phosphorus atom is bonded to the alkyl or aryl group defined above. Examples of phosphine groups include, but are not limited to, methylphosphine, ethylphosphine, propylphosphine, ibuphylphosphine, pentylphosphine, hexylphosphine, octylphosphine, cyclopentylphosphine, cyclohexylphosphine, phenylphosphine, diphenylphosphine, triphenylphosphine, etc.

[0064] In this specification, a carboxyl group may mean a substituent having a "-COOH" structure.

[0065] In this specification, (meth)acrylate may mean acrylate and methacrylate.

[0066] Hereinafter, a light-emitting element, an electronic device including a light-emitting element, and a method for manufacturing a light-emitting element according to an embodiment of the present invention will be described with reference to the drawings.

[0067] FIG. 1 is a block diagram of an electronic device according to one embodiment. Referring to FIG. 1, an electronic device (EA) according to one embodiment may include a display module (DM), a processor (PR), a memory (MR), and a power module (PM).

[0068] The processor (PR) may include at least one of a central processing unit (CPU), an application processor (AP), a graphic processing unit (GPU), a communication processor (CP), an image signal processor (ISP), and a controller.

[0069] The memory (MR) may store data information necessary for the operation of the processor (PR) or the display module (DM). When the processor (PR) executes an application stored in the memory (MR), video data signals and / or input control signals are transmitted to the display module (DM), and the display module (DM) can process the received signals to output video information through a display screen. The display module (DM) may include a display panel that displays video.

[0070] The power module (PM) may include a power supply module, such as a power adapter or battery device, and a power conversion module that converts the power supplied by the power supply module to generate power required for the operation of an electronic device (EA).

[0071] At least one of each component of the electronic device (EA) described above may be included in a display module according to the embodiments described below and in a display device of an embodiment including the same. Additionally, some of the individual modules functionally included in one module may be included in the display device, while others may be provided separately from the display device. For example, the display device may include a display module (DM), and the processor (PR), memory (MR), and power module (PM) may be provided in the form of other devices within the electronic device (EA) other than the display device.

[0072] FIG. 2 is a schematic diagram of an embodiment of various electronic devices.

[0073] Referring to FIG. 2, various electronic devices including a display module according to one embodiment may include not only electronic devices for displaying images such as a smartphone (EA_1a), a tablet PC (EA_1b), a laptop (EA_1c), a TV (EA_1d), and a desktop monitor (EA_1e), but also wearable electronic devices such as smart glasses (EA_2a), a head-mounted display (EA_2b), and a smart watch (EA_2c), and automotive electronic devices such as a Center Information Display (CID) and a room mirror display (EA_3) placed on the instrument panel, center fascia, and dashboard of a car.

[0074] FIG. 3 is a perspective view of a display module according to an embodiment of the present invention. FIG. 4 is a cross-sectional view of a display module (DM) according to an embodiment of the present invention corresponding to the line I-I' of FIG. 3.

[0075] The display module (DM) can display an image (or video) through a display surface (DD-IS). The display surface (DD-IS) may be parallel to the plane defined by the first direction (DR1) and the second direction (DR2). The display surface (DD-IS) may include a display area (DA) and a non-display area (NDA).

[0076] Pixels (PX) may be placed in the display area (DA), and pixels (PX) may not be placed in the non-display area (NDA). The non-display area (NDA) may be defined along the edge of the display surface (DD-IS). The non-display area (NDA) may surround the display area (DA). However, the embodiments are not limited thereto, and the non-display area (NDA) may be omitted, or the non-display area (NDA) may be placed only on one side of the display area (DA).

[0077] FIG. 3 illustrates a display module (DM) equipped with a planar display surface (DD-IS), but the embodiment is not limited thereto. The display module (DM) may include a curved display surface or a three-dimensional display surface. The three-dimensional display surface may include a plurality of display areas indicating different directions.

[0078] In FIG. 3 and the drawings below, the first direction (DR1) to the third direction (DR3) are illustrated, and the directions indicated by the first to third directions (DR1, DR2, DR3) described herein are relative concepts and can be converted to other directions. In this specification, the first direction (DR1) and the second direction (DR2) are orthogonal to each other, and the third direction (DR3) may be a normal direction to the plane defined by the first direction (DR1) and the second direction (DR2). In this specification, 'plane' means the plane defined by the first direction (DR1) and the second direction (DR2), and 'section' means a plane perpendicular to the plane defined by the first direction (DR1) and the second direction (DR2) and parallel to the third direction (DR3). The thickness direction of the display module (DM) may be a direction parallel to the third direction (DR3), which is a normal direction to the plane defined by the first direction (DR1) and the second direction (DR2).

[0079] In this specification, the upper surface (or front surface) and lower surface (or back surface) of the members constituting the display module (DM) may be defined with respect to a third direction (DR3). More specifically, among the two faces facing each other with respect to the third direction (DR3) in one member, the surface relatively adjacent to the display surface (DD-IS) may be defined as the front surface (or upper surface), and the surface relatively separated from the display surface (DD-IS) may be defined as the back surface (or lower surface). Additionally, in this specification, the upper (or upper side) and lower (or lower side) may be defined with respect to the third direction (DR3), and the upper (or upper side) may be defined as a direction approaching the display surface (DD-IS), and the lower (or lower side) may be defined as a direction moving away from the display surface (DD-IS).

[0080] In this specification, the statement that one component is "directly placed / directly formed" on another component means that no third component is placed between one component and another component. That is, the statement that one component is "directly placed / directly formed" on another component means that one component and another component are "in contact."

[0081] FIG. 4 is a cross-sectional view showing a portion corresponding to line I-I' of FIG. 3. FIG. 4 may be a cross-sectional view of a display module according to one embodiment.

[0082] The display module (DM) may include a display panel (DP) and an optical member (PP) disposed on the display panel (DP). The display panel (DP) may include a base substrate (BS), a circuit layer (DP-CL) disposed on the base substrate (BS), a display element layer (DP-EL) disposed on the circuit layer (DP-CL), and an encapsulation layer (TFE) disposed on the display element layer (DP-EL).

[0083] The display panel (DP) may be a configuration that substantially generates an image. The display panel (DP) may be a light-emitting display panel. For example, the display panel (DP) may be a quantum dot light-emitting display panel comprising a quantum dot light-emitting element.

[0084] The base substrate (BS) may be a member that provides a base surface on which the circuit layer (DP-CL) is disposed. The base substrate (BS) may be a rigid substrate or a flexible substrate capable of bending, folding, rolling, etc. The base substrate (BS) may be a glass substrate, a metal substrate, or a polymer substrate, etc. However, the embodiments are not limited thereto, and the base substrate (BS) may be an inorganic layer, an organic layer, or a composite material layer.

[0085] A circuit layer (DP-CL) may be disposed on a base substrate (BS). The circuit layer (DP-CL) may include an insulating layer, a semiconductor pattern, a conductive pattern, and a signal line, etc. After the insulating layer, the semiconductor layer, and the conductive layer are formed on the base substrate (BS) by means such as coating or deposition, the insulating layer, the semiconductor layer, and the conductive layer may be selectively patterned through multiple photolithography processes. Subsequently, the semiconductor pattern, the conductive pattern, and the signal line included in the circuit layer (DP-CL) may be formed.

[0086] A display element layer (DP-EL) may be disposed on a circuit layer (DP-CL). The display element layer (DP-EL) may include a pixel defining film (PDL, FIG. 6) and first to third light-emitting elements (ED-1, ED-2, ED-3, FIG. 6) described later. For example, the display element layer (DP-EL) may include an organic light-emitting material, an inorganic light-emitting material, an organic-inorganic light-emitting material, a quantum dot, a quantum rod, a micro LED, or a nano LED. More specifically, the display element layer (DP-EL) may include quantum dots.

[0087] The encapsulation layer (TFE) can protect the display element layer (DP-EL) from foreign substances such as moisture, oxygen, and dust particles. The encapsulation layer (TFE) may include at least one inorganic layer. The encapsulation layer (TFE) may include a structure in which an inorganic layer, an organic layer, and an inorganic layer are sequentially stacked.

[0088] An optical element (PP) is placed on a display panel (DP) to control reflected light from the display panel (DP) caused by external light. The optical element (PP) may include, for example, a polarizing layer (not shown) or a color filter layer (CFL, FIG. 6). Meanwhile, unlike what is shown in the drawing, the optical element (PP) may be omitted.

[0089] FIG. 5 is a plan view showing a display module of one embodiment. FIG. 6 is a cross-sectional view of a display module of one embodiment. FIG. 6 is a cross-sectional view showing the portion corresponding to line II-II' of FIG. 5.

[0090] Referring to FIGS. 5 and 6, a display module (DM) of one embodiment includes a plurality of light-emitting elements (ED-1, ED-2, ED-3). Additionally, a display module (DM) of one embodiment may include a display panel (DP) including a plurality of light-emitting elements (ED-1, ED-2, ED-3) and an optical member (PP) disposed on the display panel (DP). Meanwhile, unlike what is shown in the drawings, the optical member (PP) may be omitted in the display module (DM) of one embodiment.

[0091] A display panel (DP) includes a base substrate (BS), a circuit layer (DP-CL) and a display element layer (DP-EL) provided on the base substrate (BS), and the display element layer (DP-EL) may include a pixel defining film (PDL), light-emitting elements (ED-1, ED-2, ED-3) disposed between the pixel defining films (PDL), and an encapsulation layer (TFE) disposed on the light-emitting elements (ED-1, ED-2, ED-3).

[0092] In FIG. 6, the base substrate (BS) may include a single-layer or multi-layer structure. For example, the base substrate (BS) may include a first synthetic resin layer, an intermediate layer of a multi-layer or single-layer structure, and a second synthetic resin layer sequentially stacked. The intermediate layer may be referred to as a base barrier layer. The intermediate layer is silicon oxide (SiO₂). x The intermediate layer may include a silicon oxide layer and an amorphous silicon (a-Si) layer disposed on the silicon oxide layer, but is not particularly limited thereto. For example, the intermediate layer may include at least one of a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, and an amorphous silicon layer.

[0093] Each of the first and second synthetic resin layers may comprise a polyimide-based resin. Additionally, each of the first and second synthetic resin layers may comprise at least one of an acrylate-based resin, a methacrylate-based resin, a polyisoprene-based resin, a vinyl-based resin, an epoxy-based resin, a urethane-based resin, a cellulose-based resin, a siloxane-based resin, a polyamide-based resin, and a perylene-based resin. In this specification, "α"-based resins refer to those that include an "α" functional group.

[0094] The circuit layer (DP-CL) is disposed on a base substrate (BS), and the circuit layer (DP-CL) may include a plurality of transistors (not shown). Each of the transistors (not shown) may include a control electrode, an input electrode, and an output electrode. For example, the circuit layer (DP-CL) may include a switching transistor and a driving transistor for driving light-emitting elements (ED-1, ED-2, ED-3) of a display element layer (DP-EL).

[0095] The light-emitting regions (PXA-R, PXA-G, PXA-B) can be divided into multiple groups according to the color of light generated from the light-emitting elements (ED-1, ED-2, ED-3). In FIGS. 5 and 6, three light-emitting regions (PXA-R, PXA-G, PXA-B) emitting red light, green light, and blue light are illustrated as examples. For example, a display module (DM) of one embodiment may include distinct red light-emitting region (PXA-R), green light-emitting region (PXA-G), and blue light-emitting region (PXA-B).

[0096] A display panel (DP) may include a plurality of light-emitting elements (ED-1, ED-2, ED-3) that emit light in different wavelength regions. The plurality of light-emitting elements (ED-1, ED-2, ED-3) may emit light of different colors. For example, the display panel (DP) may include a first light-emitting element (ED-1) that emits blue light, a second light-emitting element (ED-2) that emits green light, and a third light-emitting element (ED-3) that emits red light. However, the embodiments are not limited thereto, and the first to third light-emitting elements (ED-1, ED-2, ED-3) may emit light in the same wavelength region, or at least one may emit light in a different wavelength region.

[0097] For example, the blue light-emitting region (PXA-B), green light-emitting region (PXA-G), and red light-emitting region (PXA-R) of the display module (DM) may correspond to the first light-emitting element (ED-1), the second light-emitting element (ED-2), and the third light-emitting element (ED-3), respectively.

[0098] A display module (DM) of one embodiment includes a plurality of light-emitting elements (ED-1, ED-2, ED-3), and the light-emitting elements (ED-1, ED-2, ED-3) may include a light-emitting layer (EML-B, EML-G, EML-R) including quantum dots (QD-C1, QD-C2, QD-C3). In one embodiment, at least one of the first to third light-emitting layers (EML-B, EML-G, EML-R) included in the light-emitting elements (ED-1, ED-2, ED-2) may include quantum dots (QD-C1, QD-C2, QD-C3). For example, at least one of the first light-emitting layer (EML-B) included in the first light-emitting element (ED-1), the second light-emitting layer (EML-G) included in the second light-emitting element (ED-2), and the third light-emitting layer (EML-R) included in the third light-emitting element (ED-3) may include quantum dots (QD-C1, QD-C2, QD-C3).

[0099] The first light-emitting layer (EML-B) of the first light-emitting element (ED-1) may include a first quantum dot (QD-C1). The first quantum dot (QD-C1) may emit blue light, which is the first light. The second light-emitting layer (EML-G) of the second light-emitting element (ED-2) and the third light-emitting layer (EML-R) of the third light-emitting element (ED-3) may each include a second quantum dot (QD-C2) and a third quantum dot (QD-C3). The second quantum dot (QD-C2) and the third quantum dot (QD-C3) may each emit green light, which is the second light, and red light, which is the third light.

[0100] In one embodiment, the first light may be light having a center wavelength in the wavelength range of 410 nm to 480 nm, the second light may be light having a center wavelength in the wavelength range of 500 nm to 570 nm, and the third light may be light having a center wavelength in the wavelength range of 625 nm to 675 nm.

[0101] In this specification, a quantum dot refers to a crystal of a semiconductor compound. Quantum dots can emit light of various emission wavelengths depending on the size of the crystal. Quantum dots may also emit light of various emission wavelengths by controlling the elemental ratios within the quantum dot compound.

[0102] The diameter of the above quantum dots can be, for example, about 1 nm to 10 nm.

[0103] The above quantum dots can be synthesized by a wet chemical process, an organometallic chemical vapor deposition process, a molecular beam epitaxy process, or a similar process.

[0104] The above wet chemical process is a method of growing quantum dot particle crystals after mixing an organic solvent and a precursor material. When the crystals grow, the organic solvent naturally acts as a dispersant coordinated to the surface of the quantum dot crystals and can control the growth of the crystals. Therefore, the wet chemical process can control the growth of quantum dot particles through a process that is easier and lower cost than vapor deposition methods such as Metal Organic Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy (MBE).

[0105] The quantum dots (QD-C1, QD-C2, QD-C3) included in the light-emitting layer (EML) of one embodiment may be semiconductor nanocrystals in the group II-VI compounds, group III-V compounds, group III-VI compounds, group I-III-VI compounds, group IV-VI compounds, group IV elements, group IV compounds, and combinations thereof.

[0106] Group II-VI compounds are diatomic compounds selected from the group consisting of CdSe, CdTe, CdS, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and mixtures thereof; ternary compounds selected from the group consisting of CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, and mixtures thereof; and may be selected from the group consisting of four-element compounds selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, and mixtures thereof. Meanwhile, the II-VI semiconductor compound may further include a Group I metal and / or a Group IV element. The I-II-VI compound may be selected from CuSnS or CuZnS, and the II-IV-VI compound may be selected from ZnSnS, etc. The I-II-IV-VI compound may be selected from four-element compounds selected from the group consisting of Cu2ZnSnS2, Cu2ZnSnS4, Cu2ZnSnSe4, Ag2ZnSnS2, and mixtures thereof.

[0107] Group III-VI compounds may include binary compounds such as In2S3 and In2Se3, ternary compounds such as InGaS3 and InGaSe3, or any combination thereof.

[0108] Group I-III-VI compounds may be selected from ternary compounds selected from the group consisting of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, and mixtures thereof, or from quaternary compounds such as AgInGaS2 and CuInGaS2.

[0109] III-V group compounds may be selected from the group consisting of diatomic compounds selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof; ternary compounds selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InAlP, InNP, InNAs, InNSb, InPAs, InPSb, and mixtures thereof; and quaternary compounds selected from the group consisting of GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and mixtures thereof. Meanwhile, III-V group compounds may further include a group II metal. For example, InZnP, etc., can be selected as a Group III-II-V compound.

[0110] Group IV-VI compounds may be selected from the group consisting of diatomic compounds selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof; ternary compounds selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and mixtures thereof; and quaternary compounds selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe and mixtures thereof.

[0111] Examples of the above II-IV-V semiconductor compounds may be ternary compounds selected from the group consisting of ZnSnP, ZnSnP2, ZnSnAs2, ZnGeP2, ZnGeAs2, CdSnP2, CdGeP2, and mixtures thereof.

[0112] Group IV elements may be selected from the group consisting of Si, Ge, and mixtures thereof. Group IV compounds may be diatomic compounds selected from the group consisting of SiC, SiGe, and mixtures thereof.

[0113] Each element included in the above-mentioned multi-element compounds, such as the di-element, ternary, and quaternary compounds, may exist within the particles at a uniform or non-uniform concentration. That is, the above chemical formula indicates the type of element included in the compound, and the ratio of elements within the compound may vary. For example, AgInGaS2 is AgIn x Ga 1-x S2 (where x is a real number between 0 and 1) can mean.

[0114] In this case, the binary, ternary, or quaternary compounds may exist within the particle at a uniform concentration, or they may exist within the same particle with their concentration distributions partially divided into different states. Additionally, they may have a core / shell structure in which one quantum dot surrounds another. In a core / shell structure, there may be a concentration gradient in which the concentration of the element in the shell decreases as it moves toward the core.

[0115] In some embodiments, the quantum dots (QD-C1, QD-C2, QD-C3) may have a core-shell structure comprising a core containing the aforementioned nanocrystal and a shell surrounding the core. The shell of the quantum dots (QD-C1, QD-C2, QD-C3) may serve as a protective layer to maintain semiconductor properties by preventing chemical degradation of the core and / or as a charging layer to impart electrophoretic properties to the quantum dots. The shell may be a single layer or a multilayer. Examples of the shell of the quantum dots (QD-C1, QD-C2, QD-C3) include metal or non-metal oxides, semiconductor compounds, or combinations thereof.

[0116] For example, the oxide of the metal or nonmetal mentioned above may be exemplified as a binary compound such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, or a ternary compound such as MgAl2O4, CoFe2O4, NiFe2O4, CoMn2O4, but the present invention is not limited thereto.

[0117] In addition, the above semiconductor compounds may be examples of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, etc., but the present invention is not limited thereto.

[0118] Quantum dots (QD-C1, QD-C2, QD-C3) can have a full width of half maximum (FWHM) of an emission wavelength spectrum of about 45 nm or less, preferably about 40 nm or less, and more preferably about 30 nm or less, and color purity or color reproducibility can be improved in this range. In addition, since the light emitted through these quantum dots (QD-C1, QD-C2, QD-C3) is emitted in all directions, the wide viewing angle can be improved.

[0119] In addition, the shape of the quantum dots (QD-C1, QD-C2, QD-C3) is not specifically limited to shapes commonly used in the field, but more specifically, shapes such as spherical, pyramidal, multi-arm, or cubic nanoparticles, nanotubes, nanowires, nanofibers, and nanoplate particles may be used.

[0120] Since the energy band gap of the quantum dots (QD-C1, QD-C2, QD-C3) can be controlled by adjusting the size of the quantum dots or the elemental ratio within the quantum dot compound, light of various wavelengths can be obtained from the quantum dot light-emitting layer. Therefore, by using quantum dots as described above (using quantum dots of different sizes or different elemental ratios within the quantum dot compound), a light-emitting device that emits light of various wavelengths can be realized. Specifically, the size of the quantum dots (QD-C1, QD-C2, QD-C3) or the elemental ratio within the quantum dot compound can be selected to emit red, green, and / or blue light. Additionally, the quantum dots (QD-C1, QD-C2, QD-C3) can be configured to emit white light by combining light of various colors.

[0121] Quantum dots (QD-C1, QD-C2, QD-C3) can control the color of the light they emit depending on their particle size, and accordingly, they can possess various emission colors such as blue, red, and green. The smaller the particle size of the quantum dots (QD-C1, QD-C2, QD-C3), the more likely they are to emit light in the short wavelength range. For example, among quantum dots (QD1, QD2, QD3) with the same core, the particle size of the quantum dot emitting green light may be smaller than the particle size of the quantum dot emitting red light. Furthermore, among quantum dots (QD-C1, QD-C2, QD-C3) with the same core, the particle size of the quantum dot emitting blue light may be smaller than the particle size of the quantum dot emitting green light. However, the embodiments are not limited thereto, and even in quantum dots (QD-C1, QD-C2, QD-C3) having the same core, the particle size can be controlled depending on the shell forming material and shell thickness, etc.

[0122] Meanwhile, if quantum dots (QD-C1, QD-C2, QD-C3) have various emission colors such as blue, red, and green, the quantum dots (QD-C1, QD-C2, QD-C3) having different emission colors may have core materials that are different from each other.

[0123] In one embodiment, the first to third quantum dots (QD-C1, QD-C2, QD-C3) may have different diameters. For example, the first quantum dot (QD-C1) used in the first light-emitting device (ED-1) that emits light in a relatively short wavelength region may have a relatively smaller average diameter compared to the second quantum dot (QD-C2) of the second light-emitting device (ED-2) that emits light in a relatively long wavelength region and the third quantum dot (QD-C3) of the third light-emitting device (ED-3).

[0124] Meanwhile, in this specification, the average diameter corresponds to the arithmetic mean of the diameters of a plurality of quantum dot particles. Meanwhile, the diameter of a quantum dot particle may be the average value of the width of the quantum dot particle in cross-section.

[0125] The relationship regarding the average diameter of the first to third quantum dots (QD-C1, QD-C2, QD-C3) is not limited to the above limitations. That is, although FIG. 6 shows that the sizes of the first to third quantum dots (QD-C1, QD-C2, QD-C3) are similar to each other, the sizes of the first to third quantum dots (QD-C1, QD-C2, QD-C3) included in the light-emitting elements (ED-1, ED-2, ED-3) may be different from each other. In addition, the average diameters of two selected quantum dots among the first to third quantum dots (QD-C1, QD-C2, QD-C3) may be similar, while the others may be different.

[0126] In one embodiment, the light-emitting layer (EML-B, EML-G, EML-R) of the light-emitting device (ED-1, ED-2, ED-3) may include a host and a dopant. In one embodiment, the light-emitting layer (EML-B, EML-G, EML-R) may include quantum dots (QD-C1, QD-C2, QD-C3) as a dopant material. Additionally, in one embodiment, the light-emitting layer (EML-B, EML-G, EML-R) may further include a host material. Meanwhile, in one embodiment, the light-emitting layer (EML-B, EML-G, EML-R) of the light-emitting device (ED-1, ED-2, ED-3) may emit fluorescent light. For example, quantum dots (QD-C1, QD-C2, QD-C3) may be used as a fluorescent dopant material.

[0127] Although not illustrated, each of the first to third quantum dots (QD-C1, QD-C2, QD-C3) may have a ligand or the like attached to the surface of the quantum dot for improved dispersibility.

[0128] At least some of the first to third quantum dots (QD-C1, QD-C2, QD-C3) may comprise fluoride ions bound to their surfaces. For example, each of the first to third quantum dots (QD-C1, QD-C2, QD-C3) may be provided with fluoride ions bound to their surfaces. For example, each of the first to third quantum dots (QD-C1, QD-C2, QD-C3) may comprise a core and a shell surrounding the core, and may comprise fluoride ions bound to the surface of the shell. Additionally, if each of the first to third quantum dots (QD-C1, QD-C2, QD-C3) further comprises a ligand, the fluoride ions may bind to the ligand. The fluoride ions bound to the surfaces of the first to third quantum dots (QD-C1, QD-C2, QD-C3) may originate from hydrofluoric acid used in the step of preparing the quantum dots described below.

[0129] In the display module (DM) of one embodiment illustrated in FIGS. 5 and 6, the area of ​​each of the light-emitting regions (PXA-B, PXA-G, PXA-R) may be different from one another. In this case, the area may refer to the area when viewed on a plane defined by the first direction (DR1) and the second direction (DR2).

[0130] The light-emitting regions (PXA-R, PXA-G, PXA-B) may have different areas depending on the color emitted from the light-emitting layers (EML-B, EML-G, EML-R) of the light-emitting elements (ED-1, ED-2, ED-3). The blue light-emitting region (PXA-B) of the first light-emitting element (ED-1) that emits blue light may have the largest area, and the green light-emitting region (PXA-G) of the second light-emitting element (ED-2) that emits green light may have the smallest area. However, the embodiments are not limited thereto, and the light-emitting regions (PXA-R, PXA-G, PXA-B) may emit light of a color other than red light, green light, or blue light. Alternatively, the light-emitting regions (PXA-R, PXA-G, PXA-B) may have the same area, or the light-emitting regions (PXA-R, PXA-G, PXA-B) may be provided with an area ratio different from that shown in FIG. 5.

[0131] Each of the light-emitting regions (PXA-B, PXA-G, PXA-R) may be a region separated by a pixel defining layer (PDL). The surrounding regions (NPXA) are regions between neighboring light-emitting regions (PXA-B, PXA-G, PXA-R) and may be regions corresponding to the pixel defining layer (PDL). Meanwhile, in this specification, each of the light-emitting regions (PXA-B, PXA-G, PXA-R) may correspond to a pixel.

[0132] In FIG. 6, the display element layer (DP-EL) may include a pixel defining film (PDL) and first to third light-emitting elements (ED-1, ED-2, ED-3). The pixel defining film (PDL) may have a pixel opening (OH) defined therein.

[0133] A pixel defining layer (PDL) may distinguish light-emitting elements (ED-1, ED-2, ED-3). The light-emitting layers (EML-B, EML-G, EML-R) of the light-emitting elements (ED-1, ED-2, ED-3) may be disposed in an opening (OH) defined in the pixel defining layer (PDL) to be distinguished. In one embodiment, the first light-emitting layer (EML-B) of the first light-emitting element (ED-1) may be disposed in the first opening (OH1), the second light-emitting layer (EML-G) of the second light-emitting element (ED-2) may be disposed in the second opening (OH2), and the third light-emitting layer (EML-R) of the third light-emitting element (ED-3) may be disposed in the third opening (OH3).

[0134] The pixel defining layer (PDL) can be formed from a polymer resin. For example, the pixel defining layer (PDL) can be formed by including a polyacrylate-based resin or a polyimide-based resin. Additionally, the pixel defining layer (PDL) can be formed by including inorganic materials in addition to the polymer resin. Meanwhile, the pixel defining layer (PDL) can be formed by including a light-absorbing material, or by including a black pigment or a black dye. A pixel defining layer (PDL) formed by including a black pigment or a black dye can realize a black pixel defining layer. When forming the pixel defining layer (PDL), carbon black or the like may be used as the black pigment or black dye, but the embodiments are not limited thereto.

[0135] In addition, the pixel defining layer (PDL) can be formed from inorganic materials. For example, the pixel defining layer (PDL) is silicon nitride (SiN x ), silicon oxide (SiO₂ x ), silicon nitrate (SiO₂) x N y ), silicon oxynitride (SiN x O yIt may be formed including ). The pixel defining layer (PDL) may define light-emitting regions (PXA-B, PXA-G, PXA-R). The light-emitting regions (PXA-B, PXA-G, PXA-R) and the surrounding region (NPXA) may be distinguished by the pixel defining layer (PDL).

[0136] Each of the light-emitting elements (ED-1, ED-2, ED-3) may include a first electrode (EL1), a hole transport region (HTR-1, HTR-2, HTR-3) disposed on the first electrode (EL1), a light-emitting layer (EML-B, EML-G, EML-R) disposed on the hole transport region (HTR-1, HTR-2, HTR-3), an electron transport region (ETR-1, ETR-2, ETR-3) disposed on the light-emitting layer (EML-B, EML-G, EML-R), and a second electrode (EL2) disposed on the electron transport region (ETR-1, ETR-2, ETR-3).

[0137] The hole transport region (HTR-1, ETR-2, HTR-3) and electron transport region (ETR-1, ETR-2, ETR-3) included in each of the light-emitting elements (ED-1, ED-2, ED-3) can be separated by being placed in the aperture (OH1, OH2, OH3) defined in the pixel defining film (PDL).

[0138] For example, a first hole transport region (HTR-1) and a first electron transport region (ETR-1) included in a first light-emitting element (ED-1) may be arranged adjacent to a first light-emitting layer (EML-B) and patterned within a first opening (OH1) in which the first light-emitting layer (EML-B) is arranged. A second hole transport region (HTR-2) and a second electron transport region (ETR-2) included in a second light-emitting element (ED-2) may be arranged adjacent to a second light-emitting layer (EML-G) and patterned within a second opening (OH2) in which the second light-emitting layer (EML-G) is arranged. The third hole transport region (HTR-3) and the third electron transport region (ETR-3) included in the third light-emitting element (ED-3) are arranged adjacent to the third light-emitting layer (EML-R) and may be patterned and arranged within the third opening (OH3) where the third light-emitting layer (EML-R) is arranged. However, this is not limited thereto, and the hole transport region (HTR-1, HTR-2, HTR-3) and the electron transport region (ETR-1, ETR-2, ETR-3) may be provided as a common layer arranged in common with the pixel regions (PXA-B, PXA-G, PXA-R) and the surrounding region (NPXA).

[0139] In one embodiment, each of the hole transport regions (HTR-1, HTR-2, HTR-3) and the electron transport regions (ETR-1, ETR-2, ETR-3) can be provided through a printing process within the apertures (OH1, OH2, OH3) defined in the pixel defining film (PDL).

[0140] A light-emitting layer (EML-B, EML-G, EML-R) may be disposed between the first electrode (EL1) and the second electrode (EL2). In one embodiment, the light-emitting element (ED) may include quantum dots (QD-C1, QD-C2, QD-C3) in the light-emitting layer (EML-B, EML-G, EML-R). Additionally, in one embodiment, the display module (DM) may include first to third light-emitting elements (ED-1, ED-2, ED-3) that are distinct from each other, and at least one of the first to third light-emitting elements (ED-1, ED-2, ED-3) may include quantum dots (QD-C1, QD-C2, QD-C3) in the light-emitting layer (EML-B, EML-G, EML-R). For example, the light-emitting layers (EML-B, EML-G, EML-R) may each include a plurality of quantum dots (QD-C1, QD-C2, QD-C3). Meanwhile, in one embodiment, the light-emitting layers (EML-B, EML-G, EML-R) may emit fluorescent light. For example, the quantum dots (QD-C1, QD-C2, QD-C3) may be used as fluorescent dopant materials.

[0141] In one embodiment, the first light-emitting element (ED-1) may include a first light-emitting layer (EML-B) containing a first quantum dot (QD-C1), the second light-emitting element (ED-2) may include a second light-emitting layer (EML-G) containing a second quantum dot (QD-C2), and the third light-emitting element (ED-3) may include a third light-emitting layer (EML-R) containing a third quantum dot (QD-C3). In one embodiment, the first quantum dot (QD-C1) may emit blue light, the second quantum dot (QD-C2) may emit green light, and the third quantum dot (QD-C3) may emit red light. However, the embodiments are not limited thereto, and the first to third quantum dots (QD-C1, QD-C2, QD-C3) may emit light in wavelength regions other than blue, green, and red.

[0142] Each quantum dot (QD-C1, QD-C2, QD-C3) included in the light-emitting layer (EML-B, EML-G, EML-R) can be stacked to form a layer. In FIG. 6, quantum dots (QD-C1, QD-C2, QD-C3) with a circular cross-section are arranged to form approximately two layers as an example, but the embodiment is not limited thereto. For example, the arrangement of the quantum dots (QD-C1, QD-C2, QD-C3) may vary depending on the thickness of the light-emitting layer (EML-B, EML-G, EML-R), the shape of the quantum dots (QD-C1, QD-C2, QD-C3) included in the light-emitting layer (EML-B, EML-G, EML-R), the average diameter of the quantum dots (QD-C1, QD-C2, QD-C3), etc. Specifically, quantum dots (QD-C1, QD-C2, QD-C3) in the emitting layer (EML-B, EML-G, EML-R) may be aligned adjacent to each other to form a single layer, or may be aligned to form multiple layers such as two or three layers. Additionally, the emitting layer (EML-B, EML-G, EML-R) may further include a emitting material in addition to the quantum dots (QD-C1, QD-C2, QD-C3). In one embodiment, the emitting layer (EML-B, EML-G, EML-R) may further include a fluorescent or phosphorescent dopant material or a host material.

[0143] The quantum dots constituting the first to third quantum dots (QD-C1, QD-C2, QD-C3) may be composed of different materials. Alternatively, the first to third quantum dots (QD-C1, QD-C2, QD-C3) may be formed of the same quantum dot material, or two selected quantum dots among the first to third quantum dots (QD-C1, QD-C2, QD-C3) may be formed of the same material and the remainder of the same material.

[0144] In the light-emitting device (ED-1, ED-2, ED-3) of one embodiment, the light-emitting layer (EML-B, EML-G, EML-R) and the hole transport region (HTR-1, HTR-2, HTR-3) each include a first fluorine source (AF, see FIG. 7a).

[0145] At least one of the plurality of light-emitting layers (EML-B, EML-G, EML-R) included in the light-emitting elements (ED-1, ED-2, ED-3) of one embodiment includes a quantum dot (QD-C1, QD-C2, QD-C3), and each of the light-emitting layer (EML-B, EML-G, EML-R) including the quantum dot (QD-C1, QD-C2, QD-C3) and the adjacent hole transport region (HTR-1, HTR-2, HTR-3) may include a first fluorine source (AF, see FIG. 7a).

[0146] In one embodiment, each of the first to third light-emitting layers (EML-B, EML-G, EML-R) included in the light-emitting elements (ED-1, ED-2, ED-3) may include quantum dots (QD-C1, QD-C2, QD-C3), and each of the first to third light-emitting layers (EML-B, EML-G, EML-R) and the first to third hole transport regions (HTR-1, HTR-2, HTR-3) adjacent thereto may include a first fluorine source (AF, see FIG. 7a).

[0147] The first fluorine source (Q-AF, see FIG. 7a) included in the light-emitting layer (EML-B, EML-G, EML-R) may exist dispersed within the light-emitting layer (EML-B, EML-G, EML-R) while spaced apart from the quantum dots (QD-C1, QD-C2, QD-C3), or may exist bonded to the surface of the quantum dots (QD-C1, QD-C2, QD-C3). The first fluorine source (Q-AF, see FIG. 7a) included in the light-emitting layer (EML) may correspond to the one that is moved from the hole transport region to the light-emitting layer during the step of forming the light-emitting layer in the method for manufacturing a light-emitting device described later.

[0148] The first fluorine source (H-AF, see FIG. 7a) included in the hole transport region (HTR-1, HTR-2, HTR-3) may exist dispersed within the hole transport region (HTR-1, HTR-2, HTR-3). Within the hole transport region (HTR-1, HTR-2, HTR-3), the first fluorine source (H-AF, see FIG. 7a) may exist at a uniform concentration or a non-uniform concentration. A detailed description of the first fluorine source (Q-AF, H-AF, see FIG. 7a) included in the emissive layer (EML-B, EML-G, EML-R) and the hole transport region (HTR-1, HTR-2, HTR-3) will be provided later with reference to FIG. 7a and FIG. 7b, etc.

[0149] Meanwhile, FIG. 6 illustrates that the thicknesses of the light-emitting layers (EML-B, EML-G, EML-R) of the first to third light-emitting elements (ED-1, ED-2, ED-3) in a display module (DM) of one embodiment are all similar, but the embodiment is not limited thereto. For example, in one embodiment, the thicknesses of the light-emitting layers (EML-B, EML-G, EML-R) of the first to third light-emitting elements (ED-1, ED-2, ED-3) may be different from each other.

[0150] The encapsulation layer (TFE) may cover light-emitting elements (ED-1, ED-2, ED-3). The encapsulation layer (TFE) may seal a display element layer (DP-EL). The encapsulation layer (TFE) may be a thin film encapsulation layer. The encapsulation layer (TFE) may be a single layer or a plurality of layers stacked. The encapsulation layer (TFE) includes at least one insulating layer. The encapsulation layer (TFE) according to one embodiment may include at least one inorganic film (hereinafter, encapsulating inorganic film). Additionally, the encapsulation layer (TFE) according to one embodiment may include at least one organic film (hereinafter, encapsulating organic film) and at least one encapsulating inorganic film.

[0151] The encapsulation inorganic film protects the display element layer (DP-EL) from moisture / oxygen, and the encapsulation organic film protects the display element layer (DP-EL) from foreign substances such as dust particles. The encapsulation inorganic film may include silicon nitride, silicon oxynitride, silicon oxide, titanium oxide, or aluminum oxide, but is not particularly limited thereto. The encapsulation organic film may include acrylic compounds, epoxy compounds, etc. The encapsulation organic film may include photopolymerizable organic materials and is not particularly limited thereto.

[0152] The encapsulation layer (TFE) is placed on the second electrode (EL2) and can be placed to fill a portion of the openings (OH1, OH2, OH3).

[0153] Meanwhile, in the display module (DM) of one embodiment illustrated in FIG. 5, the thicknesses of the light-emitting layers (EML-B, EML-G, EML-R) of the first to third light-emitting elements (ED-1, ED-2, ED-3) are all depicted as similar, but the embodiment is not limited thereto. For example, in one embodiment, the thicknesses of the light-emitting layers (EML-B, EML-G, EML-R) of the first to third light-emitting elements (ED-1, ED-2, ED-3) may be different from each other. In addition, the thicknesses of the hole transport regions (HTR-1, HTR-2, HTR-3) and electron transport regions (ETR-1, ETR-2, ETR-3) of the first to third light-emitting elements (ED-1, ED-2, ED-3), respectively, may also be different from each other.

[0154] Referring to FIG. 5, blue light-emitting regions (PXA-B) and red light-emitting regions (PXA-R) may be arranged alternately along a first direction (DR1) to form a first group (PXG1). Green light-emitting regions (PXA-G) may be arranged along the first direction (DR1) to form a second group (PXG2). The first group (PXG1) may be spaced apart from the second group (PXG2) in the direction of the second direction (DR2). Each of the first group (PXG1) and the second group (PXG2) may be provided in multiple numbers. The first groups (PXG1) and the second groups (PXG2) may be arranged alternately with respect to each other along the second direction (DR2).

[0155] One red light-emitting region (PXA-R) may be spaced apart from one green light-emitting region (PXA-G) in the direction of the fourth direction (DR4). One blue light-emitting region (PXA-B) may be spaced apart from one green light-emitting region (PXA-G) in the direction of the fifth direction (DR5). The fourth direction (DR4) may be a direction between the first direction (DR1) and the second direction (DR2). The fifth direction (DR5) may be a direction that intersects the fourth direction (DR4) and is inclined with respect to the second direction (DR2).

[0156] The arrangement structure of the light-emitting regions (PXA-B, PXA-G, PXA-R) illustrated in FIG. 5 may be referred to as a pentile structure. Meanwhile, the arrangement structure of the light-emitting regions (PXA-R, PXA-G, PXA-B) is not limited to the arrangement structure illustrated in FIG. 5. For example, the light-emitting regions (PXA-R, PXA-G, PXA-B) may have a stripe structure in which a red light-emitting region (PXA-R), a green light-emitting region (PXA-G), and a blue light-emitting region (PXA-B) are arranged alternately in sequence along a first direction (DR1). Additionally, the shape of the light-emitting regions (PXA-R, PXA-G, PXA-B) on a plane is not limited to that illustrated and may be defined as a shape different from that illustrated.

[0157] Referring to FIG. 6, a display module (DM) of one embodiment may further include an optical member (PP). The optical member (PP) may block external light provided to a display panel (DP) from outside the display module (DM). The optical member (PP) may block some of the external light. The optical member (PP) may have an anti-reflection function that minimizes reflection caused by external light.

[0158] In one embodiment illustrated in FIG. 6, the optical member (PP) may include a base layer (BL) and a color filter layer (CFL). In one embodiment, the display module (DM) may further include a color filter layer (CFL) disposed on light-emitting elements (ED-1, ED-2, ED-3) of the display panel (DP).

[0159] The base layer (BL) may be a member that provides a base surface on which a color filter layer (CFL) is placed. The base layer (BL) may be a glass substrate, a metal substrate, a plastic substrate, etc. However, the embodiments are not limited thereto, and the base layer (BL) may be an inorganic layer, an organic layer, or a composite material layer.

[0160] The color filter layer (CFL) may include first to third filters (CF-B, CF-G, CF-R). Each of the first to third filters (CF-B, CF-G, CF-R) may be arranged to correspond to first to third light-emitting elements (ED-1, ED-2, ED-3). For example, the first filter (CF-B) may be a blue filter, the second filter (CF-G) may be a green filter, and the third filter (CF-R) may be a red filter. Each of the first to third filters (CF-B, CF-G, CF-R) may be arranged to correspond to each of the first to third pixel regions (PXA-R, PXA-B, PXA-G).

[0161] Each of the first to third filters (CF-B, CF-G, CF-R) may include a polymer photosensitive resin and a pigment or dye. The first filter (CF-B) may include a blue pigment or a blue dye, the second filter (CF-G) may include a green pigment or a green dye, and the third filter (CF-R) may include a red pigment or a red dye. However, the embodiments are not limited thereto, and the first filter (CF-B) may not include a pigment or a dye. The first filter (CF-B) may include a polymer photosensitive resin and not include a pigment or a dye. The first filter (CF-B) may be transparent. The first filter (CF-B) may be formed of a transparent photosensitive resin.

[0162] The color filter layer (CFL) may further include a buffer layer (BFL). For example, the buffer layer (BFL) may be a protective layer that protects the first to third filters (CF-B, CF-G, CF-R). The buffer layer (BFL) may be an inorganic layer comprising at least one inorganic material selected from silicon nitride, silicon oxide, and silicon oxynitride. The buffer layer (BFL) may be composed of a single layer or multiple layers.

[0163] Additionally, the second filter (CF-G) and the third filter (CF-R) may be yellow filters. The second filter (CF-G) and the third filter (CF-R) may also be provided as a single unit without being distinguished from each other.

[0164] In one embodiment illustrated in FIG. 6, the first filter (CF-B) of the color filter layer (CFL) is shown to overlap with the second filter (CF-G) and the third filter (CF-R), but the embodiment is not limited thereto. For example, the first to third filters (CF-B, CF-G, CF-R) may be separated by a light-blocking portion (not shown) and may not overlap each other. Meanwhile, in one embodiment, each of the first to third filters (CF-B, CF-G, CF-R) may be arranged to correspond to the blue light emission region (PXA-B), the green light emission region (PXA-G), and the red light emission region (PXA-R), respectively. Meanwhile, in one embodiment, the color filter layer (CFL) may be omitted from the display module (DM).

[0165] Although not shown, the color filter layer (CFL) may further include a light-blocking portion (not shown). The light-blocking portion may be a black matrix. The light-blocking portion may be formed by including an organic light-blocking material or an inorganic light-blocking material containing a black pigment or a black dye. The light-blocking portion may prevent light leakage and distinguish the boundaries between adjacent filters (CF-B, CF-G, CF-R).

[0166] Unlike as illustrated in FIG. 6, a display module (DM) of one embodiment may include a polarizing layer (not shown) as an optical element (PP) instead of a color filter layer (CFL). The polarizing layer (not shown) may block external light supplied from the outside to a display panel (DP). The polarizing layer (not shown) may block some of the external light.

[0167] Additionally, the polarizing layer (not shown) may reduce reflected light generated in the display panel (DP) by external light. For example, the polarizing layer (not shown) may function to block reflected light when light provided from outside the display module (DM) is incident on the display panel (DP) and re-emitted. The polarizing layer (not shown) may be a circular polarizer having an anti-reflection function, or the polarizing layer (not shown) may be a linear polarizer and / 4 It may include a phase delay element. Meanwhile, the polarization layer (not shown) may be disposed on the base layer (BL) and exposed, or the polarization layer (not shown) may be disposed below the base layer (BL).

[0168] FIG. 7a is a cross-sectional view showing a light-emitting element according to one embodiment of the present invention. FIG. 7b is a cross-sectional view showing a part of the configuration of a light-emitting element according to one embodiment of the present invention. The light-emitting element (ED) described with reference to FIG. 7a can be applied in the same way to at least one of the first to third light-emitting elements (ED-1, ED-2, ED-3) shown in FIG. 6.

[0169] Referring to FIG. 7a, the light-emitting element (ED) includes a first electrode (EL1), a functional layer (FCL), and a second electrode (EL2) that are sequentially stacked. The functional layer (FCL) may include a hole transport region (HTR), a light-emitting layer (EML), and an electron transport region (ETR).

[0170] In a light-emitting device (ED) according to one embodiment, the first electrode (EL1) has conductivity. The first electrode (EL1) may be formed of a metal alloy or a conductive compound. The first electrode (EL1) may be an anode. The first electrode (EL1) may be a pixel electrode.

[0171] In a light-emitting device (ED) according to one embodiment, the first electrode (EL1) may be a reflective electrode. However, the embodiment is not limited thereto. For example, the first electrode (EL1) may be a transmissive electrode or a semitransmissive electrode. When the first electrode (EL1) is a semitransmissive electrode or a reflective electrode, the first electrode (EL1) may include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF / Ca, LiF / Al, Mo, Ti, or a compound or mixture thereof (e.g., a mixture of Ag and Mg). Alternatively, it may be a plurality of layer structures including a reflective film or a semitransmissive film formed of the materials exemplified above, and a transparent conductive film formed of ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), ITZO (indium tin zinc oxide), etc. For example, the first electrode (EL1) may be a multilayer metal film and may have a structure in which metal films of ITO / Ag / ITO are stacked.

[0172] In a light-emitting device (ED) of one embodiment, the light-emitting layer (EML) and the hole transport region (HTR) each include a first fluorine source (AF). In this specification, in a light-emitting device (ED) of one embodiment, the fluorine source included in the hole transport region (HTR) may be referred to as a first sub-fluorine source (H-AF), and the fluorine source included in the light-emitting layer (EML) may be referred to as a second sub-fluorine source (Q-AF). The first sub-fluorine source (H-AF) included in the hole transport region (HTR) and the second sub-fluorine source (Q-AF) included in the light-emitting layer (EML) may be the same. The second sub-fluorine source (Q-AF) included in the light-emitting layer (EML) corresponds to the fluorine source transferred from the hole transport region to the light-emitting layer during the step of forming the light-emitting layer in the method for manufacturing a light-emitting device described later. The fluorine source included in the hole transport region (HTR) and the fluorine source included in the light-emitting layer (EML) correspond to the same.

[0173] Referring to FIG. 7a, a hole transport region (HTR) is provided on the first electrode (EL1). The hole transport region (HTR) may include a hole injection layer (HIL) and a hole transport layer (HTL), etc. In addition, the hole transport region (HTR) may further include at least one of a hole buffer layer (not shown) and an electron blocking layer (not shown) in addition to the hole injection layer (HIL) and the hole transport layer (HTL). The hole buffer layer (not shown) can increase light emission efficiency by compensating for the resonance distance according to the wavelength of light emitted from the light-emitting layer (EML). The material included in the hole buffer layer (not shown) may be a material that can be included in the hole transport region (HTR). The electron blocking layer (not shown) is a layer that serves to prevent electron injection from the electron transport region (ETR) to the hole transport region (HTR).

[0174] Referring again to FIG. 7a, the hole transport region (HTR) may have a multilayer structure consisting of a single layer made of a single material, a single layer made of multiple different materials, or multiple layers made of multiple different materials. For example, the hole transport region (HTR) may have a structure of single layers made of multiple different materials, or a structure such as a hole injection layer (HIL) / hole transport layer (HTL), a hole injection layer (HIL) / hole transport layer (HTL) / hole buffer layer (not shown), a hole injection layer (HIL) / hole buffer layer (not shown), a hole transport layer (HTL) / hole buffer layer (not shown), or a hole injection layer (HIL) / hole transport layer (HTL) / electron blocking layer (not shown) stacked sequentially from the first electrode (EL1), but the embodiments are not limited.

[0175] The hole transport region (HTR) includes a hole transport material and a first sub-fluorine source (H-AF). The first sub-fluorine source (H-AF) may refer to a fluorine compound containing fluorine. The first sub-fluorine source (H-AF) may be a low molecular weight fluorine compound containing fluorine. The first sub-fluorine source (H-AF) may include at least one of a low molecular weight fluorine compound containing at least one functional group of -CF3, -CF2-, -CF2CF2-, -CF2CH2-, -OCF=CF2, and -OCF2-, a substituted or unsubstituted fluorinated aromatic compound, and a fluorinated azide compound.

[0176] In this specification, "fluorinated aromatic compound" refers to a compound having an aromatic moiety and containing an aryl carbon-fluorine bond. That is, a fluorinated aromatic compound may mean a compound in which at least one of the hydrogen atoms bonded to the aryl carbon constituting the aromatic moiety is substituted with a fluorine atom. When a fluorinated aromatic compound is substituted, at least one of the substituents may include a carbon-fluorine bond, but is not limited thereto.

[0177] In this specification, "azide fluoride compound" refers to a compound having an azide (-NN≡N, or N3) moiety and containing a carbon-fluorine bond. Examples of carbon-fluorine bonds include -CF3, -CF2-, -CF2CF2-, -CF2H, -CH2CF3, -CH2CF3CF2H, -CH2CF2H, -OCF=CF2, and -OCF2-, -CF2C=OCOR, and -CF2C=OCNH2, etc. Here, R is a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms. The "azide fluoride compound" may include one or more azide moiety.

[0178] In one embodiment, the first sub-fluorine source (H-AF) may further comprise a first functional group. The first functional group may mean a crosslinking functional group. Alternatively, the first functional group may be a functional group capable of forming a chemical bond with a ligand. In one embodiment, the first functional group may comprise a nucleophilic functional group or an electrophilic functional group. For example, the first functional group may comprise at least one of a thiol group, an amine group, a hydroxyl group, an azide group, a (meth)acrylate group, an epoxy group, a glycidyl group, an oxetanyl group, an alkenyl group, an alkynyl group, a carboxyl group, and an acyl halide group.

[0179] When the hole transport region (HTR) has a multilayer structure having multiple layers, at least one of the multiple layers may include a first sub-fluorine source (H-AF). For example, as shown in FIG. 7a, the hole transport region (HTR) may include a hole injection layer (HIL) disposed on a first electrode (EL1) and a hole transport layer (HTL) disposed on the hole injection layer (HIL), and the hole transport layer (HTL) may include a first sub-fluorine source (H-AF). Alternatively, unlike as shown in 5a, the hole transport layer (HTL) and the hole injection layer (HIL) may each include a first sub-fluorine source (H-AF) of one embodiment.

[0180] In one embodiment, among the plurality of layers included in the hole transport region (HTR), the layer adjacent to the light-emitting layer (EML) may include a first sub-fluorine source (H-AF). For example, the hole transport region (HTR) includes a hole injection layer (HIL) disposed on the first electrode (EL1), and a hole transport layer (HTL) disposed on the hole injection layer (HIL) and in contact with the light-emitting layer (EML), and the hole transport layer (HTL) may include a first sub-fluorine source (H-AF). As at least one layer adjacent to the light-emitting layer (EML) among the plurality of layers included in the hole transport region (HTR) includes a first sub-fluorine source (H-AF), the movement of the first sub-fluorine source (H-AF) from the hole transport region (HTR) to the light-emitting layer (EML) can easily occur during the light-emitting device manufacturing step or the light-emitting device driving step, and the passivation effect of the first sub-fluorine source (H-AF) on the quantum dot (QD-C) can be enhanced.

[0181] The hole transport region (HTR) can be formed using various methods such as vacuum deposition, spin coating, casting, the Langmuir-Blodgett (LB) method, inkjet printing, laser printing, and laser induced thermal imaging (LITI). In one embodiment, the hole transport region (HTR) can be formed by inkjet printing.

[0182] The hole transport material included in the hole transport region (HTR) may be a known inorganic material or a known organic material. For example, the hole transport material included in the hole transport region (HTR) may be an organic material.

[0183] The hole transport region (HTR) may include a compound represented by the following chemical formula H-1 as a hole transport material.

[0184] [Chemical Formula H-1]

[0185]

[0186] In the above chemical formula H-1, L1 and L2 may each independently be a direct linkage, substituted or unsubstituted ring-forming arylene group having 6 to 30 carbon atoms, or a substituted or unsubstituted ring-forming heteroarylene group having 2 to 30 carbon atoms. a and b may each independently be integers from 0 to 10. Meanwhile, if a or b is an integer of 2 or more, a plurality of L1 and L2 may each independently be a substituted or unsubstituted ring-forming arylene group having 6 to 30 carbon atoms, or a substituted or unsubstituted ring-forming heteroarylene group having 2 to 30 carbon atoms.

[0187] In chemical formula H-1, Ar a and Ar b Each may independently be a substituted or unsubstituted ring-forming aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted ring-forming heteroaryl group having 2 to 30 carbon atoms. Additionally, in Formula H-1, Ar c It may be a substituted or unsubstituted ring-forming aryl group with 6 to 30 carbon atoms.

[0188] The compound represented by the above chemical formula H-1 may be a monoamine compound. Alternatively, the compound represented by the above chemical formula H-1 is Ar a or Ar c At least one of them may be a diamine compound comprising an amine group as a substituent. Additionally, the compound represented by the above formula H-1 is Ar a and Ar b A carbazole compound comprising a carbazoleyl group substituted or unsubstituted in at least one of the following, or Ar a and Ar b It may be a fluorene-based compound comprising a substituted or unsubstituted fluorene group in at least one of them.

[0189] The compound represented by the chemical formula H-1 may be represented as any one of the compounds in the following compound group H. However, the compounds listed in the following compound group H are exemplary, and the compound represented by the chemical formula H-1 is not limited to those listed in the following compound group H.

[0190] [Compound Group H]

[0191]

[0193] Examples of hole transport materials for the high-throughput region (HTR) include phthalocyanine compounds such as copper phthalocyanine, DNTPD (N,N'-diphenyl-N,N'-bis-[4-(phenyl-m-tolyl-amino)-phenyl]-biphenyl-4,4'-diamine), m-MTDATA (4,4',4"-[tris(3-methylphenyl)phenylamino] triphenylamine), TDATA (4,4'4"-Tris(N,N-diphenylamino)triphenylamine), 2-TNATA (4,4',4"-tris{N,-(2-naphthyl)-N-phenylamino}-triphenylamine), PEDOT / PSS (Poly(3,4-ethylenedioxythiophene) / Poly(4-styrenesulfonate)), and PANI / DBSA (Polyaniline / Dodecylbenzenesulfonic acid). It may include PANI / CSA (Polyaniline / Camphor sulfonic acid), PANI / PSS (Polyaniline / Poly(4-styrenesulfonate)), NPD (N,N'-di(naphthalene-l-yl)-N,N'-diphenyl-benzidine), polyetherketone containing triphenylamine (TPAPEK), 4-Isopropyl-4'-methyldiphenyliodonium [Tetrakis(pentafluorophenyl)borate], HAT-CN (dipyrazino[2,3-f: 2',3'-h] quinoxaline-2,3,6,7,10,11-hexacarbonitrile), etc.

[0194] The hole transport region (HTR) may include common materials known in the art as hole transport materials. For example, it may include carbazole derivatives such as N-phenylcarbazole and polyvinylcarbazole, fluorine derivatives, triphenylamine derivatives such as TPD (N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1-biphenyl]-4,4'-diamine) and TCTA (4,4',4"-tris(N-carbazolyl)triphenylamine), NPD (N,N'-di(naphthalene-l-yl)-N,N'-diphenyl-benzidine), TAPC (4,4′-Cyclohexylidene bis[N,N-bis(4-methylphenyl)benzenamine]), HMTPD (4,4'-Bis[N,N'-(3-tolyl)amino]-3,3'-dimethylbiphenyl), mCP (1,3-Bis(N-carbazolyl)benzene), etc.

[0195] Additionally, the hole transport region (HTR) may include CzSi (9-(4-tert-Butylphenyl)-3,6-bis(triphenylsilyl)-9H-carbazole), CCP (9-phenyl-9H-3,9'-bicarbazole), or mDCP (1,3-bis(1,8-dimethyl-9H-carbazol-9-yl)benzene), etc.

[0196] The hole transport region (HTR) may include the hole transport materials described above in at least one of the hole injection layer (HIL), the hole transport layer (HTL), and the electron blocking layer (EBL).

[0197] The thickness of the hole transport region (HTR) may be about 5 nm to about 1,500 nm, for example, about 10 nm to about 500 nm. The thickness of the hole injection layer (HIL) may be, for example, about 3 nm to about 200 nm, and the thickness of the hole transport layer (HTL) may be about 3 nm to about 100 nm. For example, the thickness of the electron blocking layer (not shown) may be about 1 nm to about 100 nm. When the thicknesses of the hole transport region (HTR), the hole injection layer (HIL), the hole transport layer (HTL), and the electron blocking layer (not shown) satisfy the ranges described above, satisfactory hole transport characteristics can be obtained without a substantial increase in driving voltage.

[0198] An emissive layer (EML) is provided on a hole transport region (HTR). An emissive layer (EML) is provided on a hole transport region (HTR). The emissive layer (EML) may have a thickness of, for example, about 10 nm to about 100 nm or about 10 nm to about 30 nm. The emissive layer (EML) may have a multilayer structure having a single layer made of a single material, a single layer made of a plurality of different materials, or a plurality of layers made of a plurality of different materials.

[0199] In a light-emitting device (ED) according to one embodiment, the light-emitting layer (EML) may include quantum dots (QD-C). Hereinafter, the same content as described for the first to third quantum dots (QD-C1, QD-C2, QD-C3) in FIG. 6 may be applied to the quantum dots (QD-C).

[0200] Referring to FIGS. 7a and 5b together, a quantum dot (QD-C) may include a core (CO) and a shell (SH) surrounding the core (CO). The shell (SH) may surround the core (CO). The shell (SH) may completely surround the core (CO). Accordingly, the surface of the quantum dot (QD-C) may be defined by the outer surface of the shell (SH). Covered by the shell (SH), the shell (SH) may not be exposed in the quantum dot (QD-C).

[0201] Quantum dots (QD-C) may further include ligands (LD) bound to the surface. Quantum dots (QD-C) may have ligands (LD) coordinated to the surface, prepared by a chemical wet method. Most known ligand compounds can be used as ligands (LD) and are not particularly limited. For example, ligands (LD) may include RCOOH, RNH2, R2NH, R3N, RSH, RH2PO, R2HPO, R3PO, RH2P, R2HP, R3P, ROH, RCOOR', RPO(OH)2, R2POOH, or combinations thereof. Here, R and R' may each be independently a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted alkenyl group having 2 to 30 carbon atoms, a substituted or unsubstituted alkynyl group having 2 to 30 carbon atoms, or a substituted or unsubstituted ring-forming aryl group having 6 to 30 carbon atoms.

[0202] Ligands (LDs) coordinate the surface of the synthesized quantum dots (QD-Cs), and not only ensure that the quantum dots (QD-Cs) are well dispersed in solution but can also influence luminescence and electrical properties. Specific examples of ligands (LDs) include methanethiol, ethanethiol, propanethiol, butanethiol, pentanethiol, hexanethiol, octanethiol, dodecanethiol, hexadecanethiol, octadecanethiol, and benzylthiol; methaneamine, ethanolamine, propaneamine, butylamine, pentylamine, hexylamine, octylamine, dodecylamine, hexadecylamine, octadecylamine, dimethylamine, diethylamine, and dipropylamine; Methanic acid, ethanoic acid, propanoic acid, butanoic acid, pentanoic acid, hexanoic acid, heptanoic acid, octanoic acid, dodecanoic acid, hexadecanoic acid, octadecanic acid, oleic acid, benzoic acid, substituted or unsubstituted methyl phosphine such as trimethylphosphine and methyldiphenylphosphine, substituted or unsubstituted ethyl phosphine such as triethylphosphine and ethyldiphenylphosphine, substituted or unsubstituted propyl phosphine, substituted or unsubstituted butyl phosphine, substituted or unsubstituted pentyl phosphine, substituted or unsubstituted octyl phosphine such as trioctylphosphine, substituted or unsubstituted methyl phosphine oxide such as trimethylphosphine oxide and methyldiphenylphosphine oxide, substituted or unsubstituted ethyl phosphine oxide such as triethyl phosphine oxide and ethyldiphenylphosphine oxide, substituted or unsubstituted propyl phosphine oxide, substituted or unsubstituted butyl phosphine Examples include, but are not limited to, oxides, octyl phosphine oxides such as trioctylphosphine oxide (TOPO), diphenylphosphine, triphenylphosphine compounds, or their oxide compounds, and phosphonic acids. The ligand (LD) may be used alone or as a mixture of two or more.

[0203] The quantum dot (QD-C) may further contain fluoride ions (FI). The fluoride ions (FI) may exist in combination with the quantum dot (QD-C). The fluoride ions (FI) may be combined with at least one surface of the core (CO) and shell (SH) contained in the quantum dot (QD-C). For example, as shown in FIG. 7b, the fluoride ions (FI) may exist in combination with the surface of the core (CO) and the surface of the shell (SH), respectively. Additionally, the fluoride ions (FI) may exist in combination with a ligand (LD). The fluoride ions (FI) contained in the light-emitting layer (EML) may be formed through a step of treating with hydrofluoric acid during the step of manufacturing the quantum dot in the method for manufacturing a light-emitting device described later.

[0204] The light-emitting layer (EML) includes a second sub-fluorine source (Q-AF). The second sub-fluorine source (Q-AF) may refer to a fluorine compound containing fluorine. The second sub-fluorine source (Q-AF) may be a low-molecular-weight fluorine compound containing fluorine. The second sub-fluorine source (Q-AF) may include at least one of a low-molecular-weight fluorine compound containing at least one functional group of -CF3, -CF2-, -CF2CF2-, -CF2CH2-, -OCF=CF2, and -OCF2-, and at least one of a substituted or unsubstituted fluorinated aromatic compound.

[0205] In one embodiment, the second sub-fluorine source (Q-AF) may further include a second functional group. The second functional group may mean a crosslinking functional group. Alternatively, the second functional group may be a functional group capable of forming a chemical bond with a ligand. In one embodiment, the second functional group may include a nucleophilic functional group or an electrophilic functional group. For example, the second functional group may include at least one of a thiol group, an amine group, a hydroxyl group, an azide group, a (meth)acrylate group, an epoxy group, a glycidyl group, an oxetanyl group, an alkenyl group, an alkynyl group, a carboxyl group, and an acyl halide group.

[0206] In one embodiment, the second sub-fluorine source (Q-AF) included in the light-emitting layer (EML) may be the same as the first sub-fluorine source (H-AF) included in the hole transport region (HTR). The second sub-fluorine source (Q-AF) included in the light-emitting layer (EML) may be transferred from the hole transport region (HTR) to the light-emitting layer (EML) during the step of forming the light-emitting layer in the method for manufacturing a light-emitting device according to one embodiment described later. Therefore, the fluorine source included in the hole transport region (HTR) and the fluorine source included in the light-emitting layer (EML) correspond to being the same. This will be described later.

[0207] The second sub-fluorine source (Q-AF) included in the light-emitting layer (EML) may exist dispersed within the light-emitting layer (EML) while spaced apart from the quantum dot (QD-C). The second sub-fluorine source (Q-AF) may exist at a uniform or non-uniform concentration within the light-emitting layer (EML). Although not illustrated, the second sub-fluorine source (Q-AF) may exist bound to the surface of the quantum dot (QD-C). By binding the second sub-fluorine source (Q-AF) to the surface of the quantum dot (QD-C), the number of surface trap states caused by dangling bonding, etc., can be reduced. The second sub-fluorine source (Q-AF) may bind to surface defects of the quantum dot (QD-C) that may occur during the quantum dot synthesis process, the light-emitting device manufacturing process, or the operation of the light-emitting device, and accordingly, the formation of defects within the quantum dot (QD-C) can be suppressed, thereby minimizing the degradation of light-emitting characteristics.

[0208] The concentration of fluorine in the light-emitting layer (EML) measured before applying voltage to the light-emitting element (ED) and the concentration of fluorine in the light-emitting layer (EML) measured after applying voltage to the light-emitting element (ED) for a predetermined period of time may differ. That is, the concentration of fluorine in the light-emitting layer (EML) may change depending on the time during which the light-emitting element (ED) is driven. When voltage is applied to the light-emitting element (ED), the concentration of fluorine in the light-emitting layer (EML) may gradually increase over time. When the concentration of fluorine in the light-emitting layer (EML) measured before voltage is applied to the light-emitting element (ED) is set as the reference concentration, the concentration of fluorine in the light-emitting layer (EML) after voltage is applied to the light-emitting element (ED) may gradually increase from the reference concentration. When the light-emitting element (ED) is driven, a portion of the first sub-fluorine source (H-AF) included in the hole transport region (HTR) may move to the light-emitting layer (EML). Accordingly, the concentration of fluorine in the emissive layer (EML) can gradually increase.

[0209] Meanwhile, changes in fluorine concentration within the light-emitting layer (EML) according to time changes before and after operation can be confirmed through Secondary Ion Mass Spectrometry (SIMS), but are not limited thereto. For example, a reference concentration of fluorine within the light-emitting layer (EML) before operation can be measured using Secondary Ion Mass Spectrometry, and a change concentration of fluorine within the light-emitting layer (EML) after operation for a predetermined time can be measured, and then the change concentration can be measured by comparing the reference concentration with the change concentration.

[0210] The emissive layer (EML) can be formed using various methods such as vacuum deposition, spin coating, casting, the Langmuir-Blodgett (LB) method, inkjet printing, laser printing, and laser-induced thermal imaging (LITI). In one embodiment, the emissive layer (EML) can be formed by providing a quantum dot composition containing quantum dots (QD-C) using an inkjet printing method.

[0211] A light-emitting device according to one embodiment of the present invention can enhance the passivation effect on quantum dots (QD-C) by having the light-emitting layer (EML) and the hole transport region (HTR) each include a first fluorine source (Q-AF, H-AF). The first fluorine source (Q-AF, H-AF) is provided to bind to a binding site present on the surface of the quantum dot (QD-C), thereby improving the electrical characteristics of the quantum dot (QD-C) through a defect passivation effect. When the light-emitting device is operated, fluorine ions (FI) bound to the quantum dot (QD-C) may detach, causing an increase in defects within the quantum dot (QD-C). Consequently, problems such as changes in light emission characteristics over time and a decrease in the lifespan characteristics of the device may occur. However, according to the present invention, since the light-emitting layer (EML) and the hole transport region (HTR) each include a first fluorine source (Q-AF, H-AF), fluorine ions lost from the quantum dot (QD-C) during operation can be replenished. That is, by recombining the first fluorine source (Q-AF, H-AF) at the site of a defect formed by the detachment of fluorine ions (FI) from the quantum dot (QD-C) during operation, the formation of defects within the quantum dot (QD-C) can be suppressed, thereby minimizing the degradation of light emission characteristics. Accordingly, even during long-term operation, the change in the light emission characteristics of the quantum dot (QD-C) is not significant, thereby improving device stability over time.

[0212] Referring again to FIG. 7a, in a light-emitting device (ED) of one embodiment, an electron transport region (ETR) is provided on a light-emitting layer (EML). The electron transport region (ETR) may include at least one of a hole blocking layer (not shown), an electron transport layer (ETL), and an electron injection layer (EIL), but the embodiment is not limited thereto.

[0213] The electron transport region (ETR) may have a multilayer structure consisting of a single layer made of a single material, a single layer made of multiple different materials, or multiple layers made of multiple different materials.

[0214] For example, the electron transport region (ETR) may have a single-layer structure of an electron injection layer (EIL) or an electron transport layer (ETL), or it may have a single-layer structure composed of an electron injection material and an electron transport material. Additionally, the electron transport region (ETR) may have a single-layer structure composed of multiple different materials, or it may have an electron transport layer (ETL) / electron injection layer (EIL) or hole blocking layer (HBL) / electron transport layer (ETL) / electron injection layer (EIL) structure stacked sequentially from the emissive layer (EML), but is not limited thereto. The thickness of the electron transport region (ETR) may be, for example, about 20 nm to about 150 nm.

[0215] The electron transport region (ETR) can be formed using various methods such as vacuum deposition, spin coating, casting, the Langmuir-Blodgett (LB) method, inkjet printing, laser printing, and laser induced thermal imaging (LITI). In one embodiment, the electron transport region (ETR) can be formed by vacuum deposition or inkjet printing.

[0216] In one embodiment, the electron transport region (ETR) may include a known inorganic material or a known organic material.

[0217] If the electron transport region (ETR) includes an electron transport layer (ETL), the electron transport region (ETR) may include an anthracene compound. However, it is not limited to these, and the electron transport region is, for example, Alq3(Tris(8-hydroxyquinolinato)aluminum), 1,3,5-tri[(3-pyridyl)-phen-3-yl]benzene, 2,4,6-tris(3'-(pyridin-3-yl)biphenyl-3-yl)-1,3,5-triazine, DPEPO(bis[2-(diphenylphosphino)phenyl]ether oxide), 2-(4-(N-phenylbenzoimidazolyl-1-ylphenyl)-9,10-dinaphthylanthracene, TPBi(1,3,5-Tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl), BCP(2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline), Bphen(4,7-Diphenyl-1,10-phenanthroline), It may comprise TAZ(3-(4-Biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole), NTAZ(4-(Naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole), tBu-PBD(2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole), BAlq(Bis(2-methyl-8-quinolinolato-N1,O8)-(1,1'-Biphenyl-4-olato)aluminum), Bebq2(berylliumbis(benzoquinolin-10-olate), ADN(9,10-di(naphthalene-2-yl)anthracene) or a mixture thereof. The thickness of the electron transport layers (ETLs) may be about 10 nm to about 100 nm, for example, about 15 nm to about 50 nm. there is.If the thickness of the electron transport layers (ETLs) satisfies the range described above, satisfactory electron transport characteristics can be obtained without a substantial increase in driving voltage.

[0218] When the electron transport region (ETR) includes an electron injection layer (EIL), the electron transport region (ETR) may use, but is not limited to, metal halides such as LiF, NaCl, CsF, RbCl, and RbI, lanthanide metals such as Yb, metal oxides such as Li2O and BaO, or LiQ (Lithium quinolate). The electron injection layer (EIL) may also be composed of a material in which an electron transport material and an insulating organometal salt are mixed. For example, the organometal salt may include metal acetate, metal benzoate, metal acetoacetate, metal acetylacetonate, or metal stearate. The thickness of the electron injection layers (EIL) may be about 0.1 nm to about 10 nm, or about 0.3 nm to about 9 nm. If the thickness of the electron injection layers (EILs) satisfies the range described above, satisfactory electron injection characteristics can be obtained without a substantial increase in driving voltage.

[0219] As previously mentioned, the electron transport region (ETR) may include a hole blocking layer (HBL). The hole blocking layer (HBL) may include, for example, at least one of BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) and Bphen (4,7-diphenyl-1,10-phenanthroline), but is not limited thereto.

[0220] The second electrode (EL2) is provided on the electron transport region (ETR). The second electrode (EL2) may be a common electrode or a cathode. The second electrode (EL2) may be a transmissive electrode, a semitransmissive electrode, or a reflective electrode. If the second electrode (EL2) is a transmissive electrode, the second electrode (EL2) may be made of a transparent metal oxide, for example, ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), ITZO (indium tin zinc oxide), etc.

[0221] When the second electrode (EL2) is a semi-transparent electrode or a reflective electrode, the second electrode (EL2) may include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF / Ca, LiF / Al, Mo, Ti, or a compound or mixture containing these (e.g., a mixture of Ag and Mg). Alternatively, it may be a plurality of layer structures including a reflective film or a semi-transparent film formed of the above material and a transparent conductive film formed of ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), ITZO (indium tin zinc oxide), etc.

[0222] Although not illustrated, the second electrode (EL2) can be connected to an auxiliary electrode. When the second electrode (EL2) is connected to an auxiliary electrode, the resistance of the second electrode (EL2) can be reduced.

[0223] FIG. 8 is a cross-sectional view showing a light-emitting element according to an embodiment of the present invention. FIG. 8 illustrates a light-emitting element (ED) of an embodiment shown in FIG. 8 and a light-emitting element (ED-a) of another embodiment. The light-emitting element (ED-a) described with reference to FIG. 8 can be applied identically to at least one of the first to third light-emitting elements (ED-1, ED-2, ED-3) shown in FIG. 6. Meanwhile, in the description of FIG. 8, content that overlaps with the description with reference to FIG. 3 to FIG. 7b, etc., will not be explained again, and the differences will be explained primarily.

[0224] Compared to the light-emitting element (ED) shown in Fig. 7a and 7b, the light-emitting element (ED-a) shown in Fig. 8 differs in that the electron transport region (ETR) contains inorganic particles (MP).

[0225] In one embodiment, the inorganic particles (MP) may comprise an oxide of a metal comprising at least one of silicon, aluminum, zinc, indium, gallium, yttrium, germanium, scandium, titanium, tantalum, hafnium, zirconium, cerium, molybdenum, nickel, chromium, iron, niobium, tungsten, tin, and copper, or a mixture thereof, but are not limited thereto.

[0226] In one embodiment, the inorganic particles (MP) may comprise at least one of zinc oxide and tin oxide. The type of zinc oxide is not particularly limited, but may be ZnO, and may be doped with Sn, Mg, or Ca, etc. The tin oxide may be SnO, SnO2, or a combination thereof.

[0227] In one embodiment, the inorganic particles (MP) may include at least one of ZnO, ZnSnO, ZnMgO, SnO2, and ZnGaO.

[0228] The electron transport region (ETR) may be formed from an electron transport composition comprising inorganic particles (MP). For example, the electron transport region (ETR) may be formed from an electron transport composition comprising inorganic particles (MP) and a solvent. Regarding the solvent, the same content as the solvent of the ink composition (ICP) described below may apply.

[0229] FIG. 9 is a flowchart illustrating a method for manufacturing a light-emitting element according to one embodiment.

[0230] Referring to FIG. 9, a method for manufacturing a light-emitting device according to one embodiment includes the steps of forming a hole transport region on a first electrode (S100), forming a light-emitting layer on the hole transport region (S200), forming an electron transport region on the light-emitting layer (S300), and forming a second electrode on the electron transport region (S400).

[0231] FIGS. 10a to 10i are schematic drawings illustrating some of the steps of a method for manufacturing a light-emitting element according to one embodiment.

[0232] FIGS. 10a and 8b schematically illustrate a step (S100) of forming a hole transport region among the steps of a method for manufacturing a light-emitting device according to one embodiment. The step (S100) of forming a hole transport region may be a step of forming a hole transport region by providing a mixture comprising a hole transport material and a first fluorine source on a first electrode (EL1).

[0233] The step of forming a hole transport region (S100) may include providing a mixture (IK-H) comprising a hole transport material and a first fluorine source on a first electrode (EL1) to form a preliminary hole transport region (P-HTR), and drying or heat-treating the preliminary hole transport region (P-HTR). The above-described details regarding the first fluorine source may be applied in the same way as those shown in FIGS. 7a and 7b.

[0234] Based on a total content of 100 wt% of the mixture (IK-H), the content of the first fluorine source may be 10 wt% or less. For example, the content of the first fluorine source may be 0.01 wt% or more and 5 wt% or less. If the content of the first fluorine source exceeds 10 wt%, the thin film durability of the hole transport region may be reduced, and the functionality of other components included in the hole transport region and the emissive layer may be degraded. In addition, if the content of the first fluorine source is less than 0.01 wt%, it may not be sufficient to perform the role of quantum dot passivation. When the content of the first fluorine source satisfies the aforementioned range, good thin film characteristics can be maintained, and a sufficient quantum dot passivation effect can be obtained without negatively affecting the components included in the hole transport region and the emissive layer.

[0235] The method of applying the mixture (IK-H) is not particularly limited and methods such as spin coating, casting, Langmuir-Blodgett (LB) method, inkjet printing, laser printing, and Laser Induced Thermal Imaging (LITI) may be used. For example, the mixture (IK-H) may be applied onto the first electrode (EL1) using an inkjet printing method. Although FIG. 10a illustrates the mixture (IK-H) being applied between the pixel definition films (PDL) through the first nozzle (NZ-H), it is not limited thereto.

[0236] FIG. 10b is a schematic diagram illustrating the step of drying or heat-treating a pre-hole transport region (P-HTR) in a method for manufacturing a light-emitting device according to one embodiment. The step of heat-treating the pre-hole transport region (P-HTR) may be a step of providing a first heat (LT1) to the pre-hole transport region (P-HTR) and drying or heat-treating it at a first temperature for a certain period of time.

[0237] The solvent contained in the mixture (IK-H) can be removed through a step of drying or heat-treating the pre-hole transport region (P-HTR), thereby forming a uniform thin film. The step of heat-treating the pre-hole transport region (P-HTR) can be performed under a first temperature condition. The first temperature is not specifically limited, but may be between 50°C and 350°C. However, it is not limited thereto, and the temperature and time of the step of drying or heat-treating at the first temperature may be appropriately selected depending on the type and capacity of the material.

[0238] A hole transport region (HTR) can be formed through a step of drying or heat-treating a preliminary hole transport region (P-HTR). The hole transport region (HTR) formed through the step (S100) of forming the hole transport region may include a hole transport material and a first fluorine source.

[0239] FIGS. 10c to 10f schematically illustrate the step (S200) of forming a light-emitting layer in a method for manufacturing a light-emitting element according to one embodiment.

[0240] The step of forming a light-emitting layer (S200) may include providing a quantum dot composition (IK-Q) containing quantum dots on a hole transport region (HTR) to form a pre-light-emitting layer, and heat-treating the pre-light-emitting layer. The quantum dot composition (IK-Q) may include quantum dots and a solvent. The same applies to the first to third quantum dots (QD-C1, QD-C2, QD-C3) described above in FIG. 6, etc., regarding the quantum dots included in the quantum dot composition (IK-Q).

[0241] In one embodiment, the quantum dot composition (IK-Q) may further include a second fluorine source. The quantum dot composition (IK-Q) may include quantum dots and a second fluorine source. The same applies to the first fluorine source described above in FIG. 7a and FIG. 7b, etc. The second fluorine source included in the quantum dot composition (IK-Q) may be the same as the first fluorine source included in the mixture (IK-H) for forming a hole transport region, but is not limited thereto.

[0242] The method of applying the quantum dot composition (IK-Q) is not particularly limited and methods such as spin coating, casting, Langmuir-Blodgett (LB) method, inkjet printing, laser printing, and Laser Induced Thermal Imaging (LITI) may be used. For example, the quantum dot composition (IK-Q) may be applied onto the first electrode (EL1) using an inkjet printing method. Although FIG. 11b illustrates the quantum dot composition (IK-Q) being applied between the pixel definition films (PDL) through the second nozzle (NZ-E), it is not limited thereto.

[0243] FIG. 9c is a schematic diagram illustrating the step of drying or heat-treating a pre-emissive layer (P-EML) in a method for manufacturing a light-emitting device according to one embodiment. The step of drying or heat-treating the pre-emissive layer (P-EML) may be a step of providing a second heat (LT2) to the pre-emissive layer (P-EML) and drying or heat-treating it at a second temperature for a certain period of time.

[0244] Through the step of heat-treating the pre-emissive layer (P-EML), the solvent contained in the quantum dot composition (IK-Q) can be removed, and thereby a uniform thin film can be formed. The step of heat-treating the pre-emissive layer (P-EML) can be performed under a second temperature condition. The second temperature is not specifically limited, but may be between 50°C and 350°C. However, it is not limited thereto, and the temperature and time of the drying or heat-treating step at the second temperature can be appropriately selected depending on the type and capacity of the material.

[0245] Meanwhile, a method for manufacturing a light-emitting device according to one embodiment may further include a step of preparing quantum dots (QD-C, see FIG. 7a) prior to the step of forming a light-emitting layer (S200). The step of preparing quantum dots may include a step of forming a core, a step of forming a shell, and a step of reacting at least one surface of the core and shell with hydrofluoric acid. However, the embodiment is not limited thereto, and the step of reacting at least one surface of the core and shell with hydrofluoric acid in the step of preparing quantum dots may be omitted.

[0246] In a method for manufacturing a light-emitting device according to one embodiment, the step of preparing a quantum dot may include the step of forming a core, the step of reacting the surface of the core with hydrofluoric acid, and the step of forming a shell. The steps of forming a core, the step of reacting the surface of the core with hydrofluoric acid, and the step of forming a shell may proceed sequentially. That is, the step of reacting with hydrofluoric acid may be performed after the step of forming a core.

[0247] The step of reacting with hydrofluoric acid may include the step of providing a first mixture comprising a core and a first solvent, and the step of mixing the first mixture with hydrofluoric acid. The first solvent for dispersing the core may include at least one of hexane, toluene, chloroform, dimethyl sulfoxide, cyclohexylbenzene, hexadecene, and dimethyl formamide. However, the examples are not limited thereto.

[0248] In the step of mixing the first mixture with hydrofluoric acid, the surface of the core may react with hydrofluoric acid. The hydrofluoric acid may be provided as a solution dissolved in a solvent. Here, the solvent is not particularly limited as long as it is capable of dissolving hydrofluoric acid, but may be, for example, water or alcohol. Through the step of mixing the first mixture with hydrofluoric acid, fluoride ions may be bound to the surface of the core contained in the first mixture. The fluoride ions may be bound to the cation sites contained in the core.

[0249] In a method for manufacturing a light-emitting device according to one embodiment, the step of preparing quantum dots may include the step of forming a core, the step of forming a shell, and the step of reacting the surface of the shell with hydrofluoric acid. The steps of forming a core, forming a shell, and reacting the surface of the shell with hydrofluoric acid may proceed sequentially. That is, the step of reacting with hydrofluoric acid may be performed after the step of forming the shell.

[0250] A first particle having a core / shell structure can be formed through the steps of forming a core and forming a shell. The step of reacting with hydrofluoric acid may include the step of providing a second mixture comprising the first particle and a second solvent, and the step of mixing the second mixture with hydrofluoric acid. The second solvent for dispersing the first particle may include at least one of hexane, toluene, chloroform, dimethyl sulfoxide, cyclohexylbenzene, hexadecene, and dimethyl formamide. However, the examples are not limited thereto.

[0251] In the step of mixing the second mixture with hydrofluoric acid, the shell surface may react with hydrofluoric acid. The hydrofluoric acid may be provided as a solution dissolved in a solvent. Here, the solvent is not particularly limited as long as it is capable of dissolving hydrofluoric acid, but may be, for example, water or alcohol. Through the step of mixing the second mixture with hydrofluoric acid, fluoride ions may be bound to the surface of the first particles contained in the second mixture. The fluoride ions may be bound to the cation sites contained in the shell.

[0252] However, the embodiments are not limited thereto, and the step of reacting with hydrofluoric acid may include a step of reacting the surfaces of the core and the shell, respectively, with hydrofluoric acid. Specifically, the step of reacting with hydrofluoric acid may be performed after the step of forming the core and after the step of forming the shell, respectively.

[0253] In a method for manufacturing a light-emitting device according to one embodiment, the step of preparing quantum dots may include the steps of forming a core, reacting the surface of the core with hydrofluoric acid, forming a shell, and reacting the surface of the shell with hydrofluoric acid. The steps of forming a core, reacting the surface of the core with hydrofluoric acid, forming a shell, and reacting the surface of the shell with hydrofluoric acid may proceed sequentially. The above-mentioned details may apply equally to the step of reacting the surface of the core with hydrofluoric acid and the step of reacting the surface of the shell with hydrofluoric acid. Fluoride ions may be bound to the surfaces of the core and the shell, respectively, through the step of reacting the surfaces of the core and the shell with hydrofluoric acid. Fluoride ions may be bound to the cation sites contained in the core and the cation sites contained in the shell, respectively.

[0254] In addition, when a ligand is used in the step of preparing the quantum dot, the ligand may be bound to the surface of the manufactured quantum dot, and fluoride ions may be bound to at least some of the ligands. That is, in the quantum dot, the ligand may exist in a state where one end is bound to the surface of the quantum dot and the other end is bound to a fluoride ion. The same applies to the ligand as described above through FIG. 7b, etc.

[0255] The quantum dots prepared through the step of preparing the quantum dots of one embodiment may include fluoride ions bonded to their surface. Accordingly, the quantum dots included in the quantum dot composition (IK-Q) used in the step of forming the light-emitting layer (S200) may include a core and a shell, and may be provided in a state where fluoride ions are bonded to the surface of at least one of the core and the shell.

[0256] Referring again to FIGS. 10d and 8e, in the step (S200) of forming the light-emitting layer, at least a portion of the first fluorine source (AF) contained in the hole transport region (HTR) is transferred to the light-emitting layer (EML). As a portion of the first fluorine source (AF) contained in the hole transport region (HTR) is transferred to the light-emitting layer (EML), the concentration of fluorine in the hole transport region (HTR) can be gradually reduced.

[0257] In one embodiment, when the concentration of fluorine in the hole transport region (HTR) is defined as a first concentration prior to the step of forming the light-emitting layer (S200), and the concentration of fluorine in the hole transport region (HTR) is defined as a second concentration after the step of forming the light-emitting layer (S200), the second concentration may be smaller than the first concentration. In the step of forming the light-emitting layer (S200), as a portion of the first fluorine source (AF) contained in the hole transport region (HTR) moves to the light-emitting layer (EML), the concentration of fluorine in the hole transport region (HTR) may decrease. Meanwhile, changes in the concentration of fluorine within the hole transport region (HTR) may be confirmed through secondary ion mass spectrometry (SIMS), but are not limited thereto.

[0258] In the step of forming the light-emitting layer (S200), the first fluorine source (AF) that is moved from the hole transport region (HTR) to the light-emitting layer (EML) may correspond to the aforementioned second sub-fluorine source (Q-AF, see FIG. 7b). In the step of forming the light-emitting layer (S200), the first fluorine source (AF) that is not moved from the hole transport region (HTR) to the light-emitting layer (EML) and remains in the hole transport region (HTR) may correspond to the aforementioned first sub-fluorine source (H-AF, see FIG. 7b).

[0259] The first fluorine source (AF) transferred to the emissive layer (EML) may exist dispersed within the emissive layer (EML). Additionally, the first fluorine source (AF) transferred from the hole transport region (HTR) to the emissive layer (EML) can function as a quantum dot (QD-C) passivation factor. Specifically, the first fluorine source (AF) transferred from the hole transport region (HTR) to the emissive layer (EML) can re-bond to defect sites formed by the detachment of fluorine ions (FI, see FIG. 7b) from the quantum dot (QD-C) during the operation of the light-emitting device (ED). Accordingly, the formation of defects within the quantum dot (QD-C) can be suppressed, thereby minimizing the degradation of light emission characteristics.

[0260] FIGS. 10g to 10i are schematic diagrams illustrating the step (S300) of forming an electron transport region in a method for manufacturing a light-emitting element according to one embodiment.

[0261] After the step of forming the light-emitting layer (EML), the step of forming an electron transport region (ETR) on the light-emitting layer (EML) may be performed. In one embodiment, the step of forming the electron transport region (ETR) may be performed through an inkjet printing method or a spin coating method. In one embodiment, the step of forming the electron transport region (ETR) may include the step of forming a preliminary electron transport region (P-ETR) by providing an electron transport composition (IK-E) on the light-emitting layer (EML), and the step of heat-treating the preliminary electron transport region (P-ETR).

[0262] The electron transport composition may include inorganic particles (MP, FIG. 8) and a solvent. The same as described in FIG. 8 may apply to the inorganic particles (MP, FIG. 8) included in the electron transport composition.

[0263] The method of applying the electron transport composition (IK-E) is not particularly limited and may utilize methods such as spin coating, casting, the Langmuir-Blodgett (LB) method, inkjet printing, laser printing, and laser-induced thermal imaging (LITI). For example, the electron transport composition (IK-E) may be applied onto the light-emitting layer (EML) using an inkjet printing method. Although FIG. 9f illustrates the electron transport composition (IK-E) being applied between the pixel defining films (PDL) through a third nozzle (NZ-E), it is not limited thereto.

[0264] FIG. 10h is a schematic diagram illustrating the step of drying or heat-treating a preliminary electron transport region (P-ETR) in a method for manufacturing a light-emitting device according to one embodiment. The step of drying or heat-treating the preliminary electron transport region (P-ETR) may be a step of providing a third heat (LT3) to the preliminary electron transport region (P-ETR) and drying or heat-treating it at a third temperature for a certain period of time.

[0265] The solvent contained in the electron transport composition (IK-E) can be removed through a step of drying or heat-treating the preliminary electron transport region (P-ETR), thereby forming a uniform film. The step of heat-treating the preliminary electron transport region (P-ETR) can be performed under a third temperature condition. The third temperature is not specifically limited, but may be between 50°C and 350°C. However, it is not limited thereto, and the temperature and time of the step of drying or heat-treating at the third temperature may be appropriately selected depending on the type and capacity of the material.

[0266] In the method for manufacturing a light-emitting device of one embodiment, when an electron transport region (ETR) is formed from an electron transport composition (IK-E), a light-emitting device (ED) having the structure shown in FIG. 8 can be formed.

[0267] However, the embodiments are not limited thereto, and the step of forming the electron transport region (ETR) may be a step of depositing an electron transport material on the light-emitting layer (EML). In this case, the light-emitting element (ED) illustrated in FIG. 7a may be formed through the step of forming the electron transport region (ETR). Meanwhile, the electron transport material for forming the electron transport region (ETR) may be the electron transport region (ETR) material described above in FIG. 7a.

[0268] Meanwhile, in FIGS. 10a to 10h, the hole transport region (HTR) and the electron transport region (ETR) are each shown as being provided between the pixel defining film (PDL), but the embodiment is not limited thereto, and the hole transport region (HTR) and the electron transport region (ETR) may each be provided as a common layer to overlap with the pixel defining film (PDL).

[0269] Referring to FIG. 10i, a step of forming a second electrode (EL2) may be performed after the step of forming an electron transport region (ETR). A second electrode (EL2) may be formed on the electron transport region (ETR) so that a light-emitting device (ED) may be formed in which the first electrode (EL1), hole transport region (HTR), light-emitting layer (EML), electron transport region (ETR), and second electrode (EL) are sequentially stacked.

[0270] Quantum dots can experience reduced luminescence efficiency as charge carriers become trapped due to factors such as dangling bonds on the surface. The presence of dangling bonds within quantum dots can cause non-radiative recombination, which in turn leads to a decrease in luminescence efficiency. As a method to passivate surface defects in quantum dots, treating the surface with hydrofluoric acid (HF) during quantum dot synthesis can be used. Quantum dots treated with hydrofluoric acid (HF) contain fluoride ions that are passivated by fluoride ions and bound to the surface. By binding to the surface of the quantum dots, these fluoride ions can reduce the number of surface trap states caused by dangling bonds. However, the fluoride ions provided through surface treatment are highly likely to detach and be lost from the quantum dots during the quantum dot synthesis process, the manufacturing process of the light-emitting device, or the operation of the light-emitting device. Therefore, there are limitations to reducing the number of surface defects within quantum dots beyond a certain level using only the hydrofluoric acid treatment method.

[0271] According to one embodiment of the present invention, a method for manufacturing a light-emitting device includes the step of forming a hole transport region by providing a mixture comprising a hole transport material and a first fluorine supplier, and by moving the first fluorine supplier from the hole transport region to the light-emitting layer in the step of forming the light-emitting layer, a passivation factor capable of replacing fluorine ions lost from the quantum dot (QD-C) can be provided. That is, the first fluorine supplier provided from the hole transport region can recombine at a defect site formed by the detachment of fluorine ions from the quantum dot, and accordingly, the formation of defects within the quantum dot (QD-C) can be suppressed, thereby minimizing the degradation of light-emitting characteristics.

[0272] FIG. 11a is a schematic diagram illustrating the change over time of quantum dots included in a light-emitting element of an example. FIG. 11b is a schematic diagram illustrating the change over time of quantum dots included in a light-emitting element of a comparative example. FIG. 11a and FIG. 11b show the change in the state of quantum dots included in a light-emitting element before driving and after driving for a certain period of time.

[0273] The light-emitting elements of the examples and comparative examples may have the structure of the light-emitting element shown in FIG. 7a. The light-emitting elements of the examples and comparative examples each include a light-emitting layer containing quantum dots (QD-C). The quantum dots (QD-C) included in the light-emitting elements of the examples and comparative examples are provided with fluoride ions (FI) bonded to their surface. That is, the quantum dots (QD-C) included in the examples and comparative examples are treated with hydrofluoric acid during the quantum dot manufacturing step and contain fluoride ions (FI) bonded to their surface.

[0274] The light-emitting element of the embodiment includes a first fluorine source (Q-AF, H-AF, see FIG. 7a) in each of the light-emitting layer and the hole transport region. As shown in FIG. 11a, the light-emitting element of the embodiment includes a first fluorine source (Q-AF) within the light-emitting layer. The first fluorine source (Q-AF) included within the light-emitting layer may exist dispersed within the light-emitting layer. The first fluorine source (Q-AF) may correspond to one that has moved from the hole transport region to the light-emitting layer when the hole transport region is formed.

[0275] The light-emitting device of the comparative example is identical to the light-emitting device of the embodiment except that the light-emitting layer and the hole transport region each do not include a first fluorine source (Q-AF, H-AF, see FIG. 7a). That is, the light-emitting device of the comparative example corresponds to a case where a first fluorine source is not provided when forming the hole transport region, and accordingly, unlike the light-emitting device of the embodiment, it does not include a first fluorine source (Q-AF) that has moved from the hole transport region to the light-emitting layer.

[0276] Referring to FIGS. 11a and 11b, the light-emitting device of the example and comparative example may include a quantum dot (QD-C). The quantum dot (QD-C) may include a core (CO) and a shell (SH) surrounding the core (CO). Additionally, the quantum dot (QD-C) may further include a ligand (LD) bonded to the surface of the shell (SH). The quantum dot (QD-C) may include a fluoride ion (FI) bonded to its surface. The fluoride ion (FI) may exist in a state forming a bond with at least one of the core (CO) and the shell (SH). Additionally, the fluoride ion (FI) may exist in a state bonded to the ligand (LD). The state of the quantum dot (QD-C) may change after operating the light-emitting device for a certain period of time compared to before operating the light-emitting device.

[0277] Referring to FIGS. 11a and 11b, after driving the light-emitting element for a certain period of time (T1), the quantum dots (QD-C) included in the light-emitting elements of the example and comparative example may change state to the example quantum dots (QD-Ca) and comparative quantum dots (QD-Cb), respectively. The example quantum dots (QD-Ca) and comparative quantum dots (QD-Cb), respectively, may have a state in which some of the fluoride ions (FI) bound to the surface of the initial quantum dots (QD-C) before driving have been detached, thereby forming a defect (DF). During the operation of the light-emitting element, some of the fluoride ions (FI) bound to the initial quantum dots (QD-C) may be detached. When fluoride ions (FI) are detached, a defect (DF) is formed on the surface of the quantum dots, which may reduce the light-emitting efficiency of the quantum dots or cause charge carriers to be trapped on the surface, thereby degrading optical and electrical properties.

[0278] The quantum dot of the example (QD-Ca) and the quantum dot of the comparative example (QD-Cb) differ in the number of defect (DF) sites formed within the quantum dot when based on the same driving time (T1). In the case of the quantum dot of the comparative example (QD-Cb), since it does not receive a first fluorine source from the hole transport region, the number of surface defect (DF) sites gradually increases as the driving time increases. Accordingly, the light-emitting device of the comparative example may experience a greater decrease in efficiency and lifespan with driving time compared to the light-emitting device of the example. In contrast, the light-emitting device of the example may include a first fluorine source (Q-AF) provided by the hole transport region in the light-emitting layer. Accordingly, even if a portion of the fluorine ions (FI) is detached and a defect (DF) is formed during driving, the first fluorine source (Q-AF) can be re-bonded to the defect (DF) site in the light-emitting device of the example; as a result, the occurrence of defects (DF) within the quantum dot (QD-C) is suppressed, and the light-emitting efficiency and lifespan characteristics can be increased.

[0279] Although the present invention has been described above with reference to preferred embodiments, those skilled in the art or those with ordinary knowledge in the relevant technical field will understand that various modifications and changes can be made to the invention without departing from the spirit and technical scope of the invention as set forth in the claims below. Accordingly, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be determined by the claims. Explanation of the symbols

[0280] DD: Display device DP: Display Panel EML-B, EML-G, EML-R: Emissive layer QD-C1, QD-C2, QD-C3: Quantum dots ETR-1, ETR-2, ETR-3: Electron transport layer HTR-1, HTR-2, HTR-3: Hole transport layer Q-AF, H-AF: Fluoride ions QD-C: Quantum Dot CO: Core SH: Shell LD: Ligand

Claims

Claim 1 A method for manufacturing a light-emitting device comprising: a step of forming a hole transport region by providing a mixture comprising a hole transport material and a first fluorine source comprising fluorine on a first electrode; a step of forming a light-emitting layer comprising quantum dots on the hole transport region; a step of forming an electron transport region on the light-emitting layer; and a step of forming a second electrode on the electron transport region; wherein, in the step of forming the light-emitting layer, at least a portion of the first fluorine source included in the hole transport region moves to the light-emitting layer. Claim 2 A method for manufacturing a light-emitting device according to claim 1, wherein, prior to the step of forming the light-emitting layer, the concentration of fluorine in the hole transport region is defined as a first concentration, and after the step of forming the light-emitting layer, the concentration of fluorine in the hole transport region is defined as a second concentration, wherein the second concentration is smaller than the first concentration. Claim 3 A method for manufacturing a light-emitting device according to claim 1, wherein the quantum dot comprises a core; a shell surrounding the core; and fluoride ions bonded to the surface of at least one of the core and the shell. Claim 4 A method for manufacturing a light-emitting device according to claim 3, further comprising a step of preparing the quantum dots prior to the step of forming the light-emitting layer, wherein the step of preparing the quantum dots includes a step of forming the core; a step of forming the shell; and a step of reacting at least one surface of the core and the shell with hydrofluoric acid. Claim 5 A method for manufacturing a light-emitting device according to claim 1, wherein the step of forming the hole transport region is performed through an inkjet process. Claim 6 A method for manufacturing a light-emitting device according to claim 1, wherein the step of forming the hole transport region comprises: a step of forming a preliminary hole transport region by providing the mixture comprising the hole transport material and the first fluorine source onto the first electrode; and a step of drying or heat-treating the preliminary hole transport region. Claim 7 A method for manufacturing a light-emitting device according to claim 1, wherein the step of forming the light-emitting layer is performed through an inkjet process. Claim 8 A method for manufacturing a light-emitting device according to claim 1, wherein the step of forming the light-emitting layer comprises: a step of forming a pre-light-emitting layer by providing a quantum dot composition containing the quantum dots on the hole transport region; and a step of drying or heat-treating the pre-light-emitting layer. Claim 9 In claim 8, the method for manufacturing a light-emitting device further comprises a second fluorine source in the quantum dot composition. Claim 10 A method for manufacturing a light-emitting device according to claim 1, wherein the step of forming the electron transport region comprises: a step of forming a preliminary electron transport region by providing an electron transport composition containing an electron transport material on the light-emitting layer; and a step of drying or heat-treating the preliminary electron transport region. Claim 11 A method for manufacturing a light-emitting device according to claim 1, wherein the electron transport material comprises a metal oxide. Claim 12 A light-emitting device comprising: a first electrode; a second electrode disposed on the first electrode; a light-emitting layer disposed between the first electrode and the second electrode and including quantum dots; and a hole transport region disposed between the first electrode and the light-emitting layer, wherein the light-emitting layer and the hole transport region each include a first fluorine source comprising fluorine. Claim 13 In claim 12, the hole transport region comprises a hole injection layer disposed on the first electrode; and a hole transport layer disposed on the hole injection layer and in contact with the light-emitting layer, wherein the hole transport layer comprises the first fluorine source. Claim 14 In claim 12, the quantum dot is a light-emitting device comprising a core and a shell surrounding the core. Claim 15 In claim 14, the quantum dot is a light-emitting device further comprising fluorine ions bonded to at least one surface of the core and the shell. Claim 16 In claim 14, the above quantum dot is a light-emitting device further comprising a ligand bonded to the shell surface. Claim 17 A light-emitting device according to claim 12, further comprising an electron transport region disposed between the second electrode and the light-emitting layer and comprising a metal oxide. Claim 18 An electronic device comprising: a display module including a display panel and an input sensor disposed on the display panel; and a power module supplying power to the display module; wherein the display panel comprises a circuit layer; and a display element layer disposed on the circuit layer and comprising a pixel defining film having a light-emitting element and a pixel opening defined therein; wherein the light-emitting element comprises a first electrode; a second electrode disposed on the first electrode; a light-emitting layer disposed between the first electrode and the second electrode and comprising a quantum dot; and a hole transport region disposed between the first electrode and the light-emitting layer, and wherein the light-emitting layer and the hole transport region each comprise a first fluorine source comprising fluorine. Claim 19 An electronic device according to claim 18, wherein, when the concentration of fluorine in the light-emitting layer measured before voltage is applied to the light-emitting element is set as a reference concentration, the concentration of fluorine in the light-emitting layer gradually increases from the reference concentration after voltage is applied to the light-emitting element. Claim 20 In claim 18, the light-emitting element comprises a first light-emitting element comprising a first light-emitting layer emitting blue light, a second light-emitting element comprising a second light-emitting layer emitting green light, and a third light-emitting element comprising a third light-emitting layer emitting red light, wherein at least one of the first light-emitting layer, the second light-emitting layer, and the third light-emitting layer comprises the quantum dot and the first fluorine source.

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