Components of a semiconductor manufacturing device and a method for manufacturing components of a semiconductor manufacturing device

Abstract

A component of a semiconductor manufacturing apparatus comprises a substrate having a first surface and a second surface extending from the first surface, and a film comprising aluminum hydroxide that is continuously and directly provided on the first surface and the second surface. Additionally, the substrate comprises aluminum. Additionally, the substrate comprises a space for flowing a liquid, and the inner wall of the space is directly provided with a film comprising aluminum hydroxide. Additionally, the substrate comprises a space capable of arranging a heat source, and the inner wall of the space is directly provided with a film comprising aluminum hydroxide.

Description

Technology Field

[0001] One embodiment of the present invention relates to a component of a semiconductor manufacturing device. In addition, one embodiment of the present invention relates to a method for manufacturing a component of a semiconductor manufacturing device. Background Technology

[0002] A semiconductor device is a device that utilizes the semiconductor properties of silicon, etc. Recently, semiconductor devices are installed in almost all electronic devices and enable control according to the functions of each electronic device. A semiconductor device is constructed by stacking insulating films and conductive films on a substrate such as a silicon wafer (Si-wafer) and patterning these films or the substrate. For example, these films are stacked on a substrate using a semiconductor manufacturing apparatus that enables deposition, sputtering, chemical vapor deposition (CVD), or chemical reactions of the substrate, and these films or the substrate are patterned using a semiconductor manufacturing apparatus that enables a photolithography process. The photolithography process includes the formation of a resist over these films provided for patterning, exposure of the resist, formation of a resist mask by development, partial removal of these films by etching, and removal of the resist mask.

[0003] A semiconductor manufacturing apparatus comprises a plurality of components (components of the semiconductor manufacturing apparatus). For example, components of the semiconductor manufacturing apparatus include a mounting base for mounting a substrate (hereinafter referred to as a stage), an electrode section, a shower head, etc. The characteristics of the aforementioned film are largely determined by conditions for film deposition and etching of the film. One of these conditions is the voltage applied to the stage. With the recent miniaturization of semiconductor devices, the ratio of the diameter of the hole being processed to the thickness of the film being processed (aspect ratio) is increasing. For this reason, the voltage applied to the stage included in the etching apparatus tends to increase, for example. Therefore, improvements in the withstand voltage and insulation properties of the components included in the stage are required. Furthermore, the aforementioned film may be deposited on a substrate by generating plasma, or etched by generating plasma. Therefore, improvements in the plasma resistance of the components included in the stage are required.

[0004] For example, the components included in the stage include a cooling plate, an electrostatic chuck, a heater, etc. For example, an electrostatic chuck is described in Patent Document 1 in which an anodized film is deposited on the surface of a substrate constituting the stage and a boehmite film is deposited on the anodized film in order to suppress the degradation of insulation properties. Prior art literature

[0005] Japanese Patent Publication No. 2005-57234 The problem to be solved

[0006] One of the objectives of an embodiment of the present invention is to provide a component of a semiconductor manufacturing device capable of suppressing a decrease in insulation properties. Furthermore, one of the objectives of an embodiment of the present invention is to provide a component of a semiconductor manufacturing device capable of suppressing a decrease in withstand voltage characteristics. Furthermore, one of the objectives of an embodiment of the present invention is to provide a method for manufacturing a component of a semiconductor manufacturing device capable of suppressing a decrease in insulation properties. Furthermore, one of the objectives of an embodiment of the present invention is to provide a method for manufacturing a component of a semiconductor manufacturing device capable of suppressing a decrease in withstand voltage characteristics. means of solving the problem

[0007] A component of a semiconductor manufacturing apparatus for mounting a substrate according to one embodiment of the present invention comprises a substrate having a first surface and a second surface connected to the first surface, and a film comprising aluminum hydroxide continuously and directly provided on the first surface and the second surface.

[0008] A method for manufacturing a component of a semiconductor manufacturing apparatus for mounting a substrate according to one embodiment of the present invention comprises installing a substrate having a first surface and a second surface connected to the first surface in a chamber capable of heating and pressurizing, supplying water or an aqueous solution into the chamber, heating and pressurizing the chamber to generate steam within the chamber, and forming a film containing aluminum hydroxide continuously on the first surface and the second surface.

[0009] A method for manufacturing a component of a semiconductor manufacturing apparatus for mounting a substrate according to one embodiment of the present invention comprises installing a substrate having a first surface and a second surface connected to the first surface in a chamber capable of heating and pressurizing, supplying steam into the chamber, heating and pressurizing the chamber, and forming a film comprising aluminum hydroxide continuously on the first surface and the second surface. Effects of the invention

[0010] According to one embodiment of the present invention, a component of a semiconductor manufacturing device capable of suppressing a decrease in insulation performance and withstand voltage is provided. Furthermore, according to one embodiment of the present invention, a method for manufacturing a component of a semiconductor manufacturing device capable of suppressing a decrease in insulation performance and withstand voltage is provided. Brief explanation of the drawing

[0011] FIG. 1 is a perspective view showing the configuration of a stage according to a first embodiment of the present invention. FIG. 2 is a schematic diagram showing a cross-section of a stage according to a first embodiment of the present invention. Figure 3 is a schematic diagram showing an enlarged cross-section of a part of the stage shown in Figure 2. Figure 4 is a schematic diagram showing an enlarged cross-section of a part of a conventional stage. Figure 5 is a schematic diagram showing an enlarged cross-section of a part of the stage shown in Figure 2. Figure 6 is a schematic diagram showing an enlarged cross-section of a part of the stage shown in Figure 2. FIG. 7 is a schematic diagram showing a schematic of an apparatus for explaining a method of manufacturing a stage according to a first embodiment of the present invention. FIG. 8 is a flowchart illustrating a method for manufacturing a stage according to a first embodiment of the present invention. FIG. 9 is a schematic diagram showing a schematic of an apparatus for explaining a method of manufacturing a stage according to a first embodiment of the present invention. FIG. 10 is a schematic diagram showing a cross-section of a semiconductor manufacturing apparatus including a stage according to a second embodiment of the present invention. FIG. 11 is a perspective view showing the configuration of a shower head according to a third embodiment of the present invention. FIG. 12 is a schematic diagram showing a cross-section along A1-A2 of the shower head shown in FIG. 11. FIG. 13 is a schematic diagram showing a cross-section along B1-B2 of the shower head shown in FIG. 11. FIG. 14 is a schematic diagram showing a cross-section of a semiconductor manufacturing apparatus including a stage and a shower head according to a fourth embodiment of the present invention. Specific details for implementing the invention

[0012] Hereinafter, a stage or a method for manufacturing a stage according to one embodiment of the present invention will be described with reference to the drawings. However, the present invention may be implemented in various forms without departing from the gist thereof, and is not to be interpreted as being limited to the description of the embodiments exemplified below.

[0013] In order to make the explanation clearer, the drawings may schematically represent the width, thickness, shape, etc. of each part in comparison with the actual embodiment; however, this is merely an example and does not limit the interpretation of the present invention. Furthermore, in this specification and each drawing, elements having the same function as described in the previously published drawings are given the same reference numerals, and redundant descriptions may be omitted.

[0014] In the present specification and drawings, when multiple identical or similar configurations are collectively denoted, the same reference numeral is used, and when they are denoted individually, a hyphen and a number are placed after the reference numeral.

[0015] In this specification, the letters “first,” “second,” or “third,” etc. attached to each component are convenience markings used to distinguish each component and, unless otherwise specifically stated, do not have any further meaning.

[0016] In the following explanation, for convenience of explanation, expressions indicating direction such as "up" and "down" may be used. With respect to the stage, the direction in which gravity acts is "down," and the opposite is "up."

[0017] [1. First embodiment]

[0018] Referring to FIGS. 1 to 9, a stage (100) according to the first embodiment of the present invention is described as an example of a component of a semiconductor manufacturing device.

[0019] [1-1. Stage Overview]

[0020] With reference to FIGS. 1 to 3, FIGS. 5, and FIGS. 6, an overview of the stage (100) is described. FIG. 1 is a perspective view showing the configuration of the stage (100). FIG. 2 is a schematic diagram showing a cross-section of the stage (100). FIG. 3 is a schematic diagram showing an enlarged cross-section around the part (101) of the stage (100). FIG. 4 is a schematic diagram showing an enlarged cross-section around the part (101) of a conventional stage. FIGS. 5 and FIG. 6 are schematic diagrams showing an enlarged cross-section around the space (160).

[0021] The stage (100) includes a laminated substrate (110) and an insulating film (150).

[0022] The laminated substrate (110) includes a first substrate (120), a second substrate (140), a space (160), and a through hole (180). As an optional configuration, the laminated substrate (110) may include an opening (170) and may include a through hole (180). For example, the first substrate (120) and the second substrate (140) are joined by soldering. Meanwhile, the method of joining is not limited to soldering. Also, as an example, the laminated substrate (110) includes a configuration in which two substrates (first substrate (120) and second substrate (140)) are joined, but the laminated substrate (110) may include a configuration in which three or more substrates are joined.

[0023] The first substrate (120) includes a first surface (122), a second surface (124), and a third surface (126). The third surface (126) is provided between the first surface (122) and the second surface (124), connected to the first surface (122) and the second surface (124). For example, the third surface (126) has a C-chamfered shape. The third surface (126) may also have an R-chamfered shape with curvature. The second substrate (140) includes a fourth surface (142).

[0024] A space (160) is formed on one or both of the first substrate (120) and the second substrate (140). The space (160) may be a flow path for the medium to circulate within the stage (100), or a groove in which a heat source is placed within the stage (100). Additionally, the space (160) may be referred to as a hole, a connecting hole, etc. For example, the medium and the heat source are used to control the temperature of a substrate placed on the stage (100). For example, the medium is a liquid such as water, alcohol such as isopropanol or ethylene glycol, or silicone oil. The medium may be used when cooling the stage (100) or when heating the stage (100). For example, the heat source is a sheath heater. The sheath heater has the function of generating heat when energized.

[0025] Additionally, for example, among the spaces (160), the space (160a) corresponding to the inflow or outflow of a medium, or the insertion or extraction hole of a heat source, includes an inflow / outflow hole (160e). In the cross-section of the stage (100) shown in FIG. 2, one space (160a) including an inflow / outflow hole (160e) is shown, but the space (160a) shown in FIG. 2 is an example and is not limited to the example shown in FIG. 2. Also, the inflow / outflow hole (160e) shown in FIG. 2 is provided in the second substrate (140), and the location where the inflow / outflow hole (160e) shown in FIG. 2 is provided is an example and is not limited to the example shown in FIG. 2. For example, the stage (100) includes two spaces (160a), one space (160a) containing an inlet / outlet port (160e) corresponding to an inlet (e.g., an inlet port or an insertion port) and the other space (160a) containing an inlet / outlet port (160e) corresponding to an outlet (e.g., an outlet port or an extraction port). Meanwhile, the number of spaces (160a) containing the inlet / outlet port (160e) is not limited to two, but may be three or more, or may be one (e.g., a configuration in which one end of a heat source and the other end are provided in the same inlet / outlet port). Additionally, the space (160a) containing the inlet / outlet port (160e) may be provided in any location based on the use or specifications of the stage (100).

[0026] The opening (170) is a hole for installing a temperature sensor on the bottom side (fourth side (142) side) of the laminated substrate (110). For example, the temperature sensor is a thermocouple. Additionally, the stage (100) shown in FIG. 2 includes one opening (170), but the stage (100) may include a plurality of openings (170). By having the stage (100) include a plurality of openings (170), the film processing device (200) (Fig. 10) including the stage (100) can obtain the temperature distribution of the substrate in detail, and thus can control the temperature of the substrate more precisely.

[0027] For example, the through hole (180) functions as a flow path for flowing gas into the gap between the stage (100) and the substrate placed on the stage (100). For example, the gas is a gas with high thermal conductivity, such as helium. Additionally, the through hole (180) shown in FIG. 2 is one, but the stage (100) may include a plurality of through holes (180). By having the stage (100) include a plurality of through holes (180), the film processing device (200) (Fig. 10) including the stage (100) can efficiently transfer thermal energy to the substrate. Meanwhile, as an example, the through hole (180) functions as a flow path for flowing gas into the gap between the stage (100) and the substrate placed on the stage (100). Depending on the use or specifications of the stage (100), the through hole (180) may be a flow path for flowing solvent, or a hole for installing a heat source. Additionally, although examples of stage (100) having a through hole (180) are shown, such as a passage for gas flow, a passage for solvent flow, or a configuration for installing a heat source, the passage for gas flow, a passage for solvent flow, or a configuration for installing a heat source is not limited to the through hole (180), and configurations other than the through hole may be selected depending on the use or specifications of the stage (100).

[0028] The insulating film (150) is provided to cover and contact the first surface (122), the second surface (124), the third surface (126), and the fourth surface (142). Additionally, the insulating film (150) is provided on the inner wall (172) of the opening (170), the inner wall (182) of the through hole (180), and the inner wall (162) of the space (160). Furthermore, the insulating film (150) is also provided on the inner wall (162 and 162e) of the space (160a) containing the inlet / outlet hole (160e). That is, the insulating film (150) is provided not only on the surface of the laminated substrate (110), such as the first surface (122), the second surface (124), the third surface (126), and the fourth surface (142), but also on the inner wall of the space, the bottom or side wall, and the inner wall of the flow path, etc., where the surface is not exposed.

[0029] The material used for the first substrate (120) and the second substrate (140) is a metal. For example, the material used for the first substrate (120) and the second substrate (140) is an aluminum alloy (A6061).

[0030] For example, the material used for the insulating film (150) may be a material capable of satisfying desired insulation properties by reacting with the materials used for the first substrate (120) and the second substrate (140), a material capable of satisfying desired withstand voltage characteristics, a material capable of satisfying desired corrosion resistance, and a material capable of satisfying desired plasma resistance. For example, the material used for the insulating film (150) of the stage (100) includes aluminum hydroxide. For example, aluminum hydroxide includes aluminum hydroxide (AlO(OH)), which is a metal hydroxide. Aluminum hydroxide (AlO(OH)) is so-called boehmite.

[0031] [1-2. Configuration of each part (101) and space (160)]

[0032] Referring to FIGS. 3 to 6, the configuration around each part (101) of the stage (100) and the configuration around the space (160) of the stage (100) will be described. Configurations identical or similar to those in FIGS. 1 and 2 will be described as necessary.

[0033] As described in “1-1,” the insulating film (150) containing boehmite is provided to cover and contact the first surface (122), the second surface (124), the third surface (126), and the fourth surface (142). As shown in more detail in FIG. 3, the insulating film (150) is provided in the section (101) (section (101c-1)) formed between the first surface (122) and the third surface (126), and in the section (101) (section (101c-2)) formed between the first surface (122) and the third surface (126). Meanwhile, although not illustrated, the boundary region is formed in the mutually connected surfaces of the first substrate (120) and the mutually connected surfaces of the second substrate (140).

[0034] Additionally, as shown in FIG. 5, the insulating film (150) is provided to be in contact with and covering the inner wall (162) (inner wall (162r, 162l, 162u and 162d)) of the space (160). The first substrate (120) includes the inner wall (162r, 162l and 162u), and the second substrate (140) includes the inner wall (162d). The boundary region (103) of the space (160) includes the boundary between the first substrate (120) and the second substrate (140), the end of the joint surface (144) of the first substrate (120) and the second substrate (140) on the space (160) side, and the boundary between the inner wall (162r) and the inner wall (162d). Accordingly, the insulating film (150) is arranged to be in contact with and cover the boundary region (103). Meanwhile, although not shown in the illustration, the boundary between the inner wall (162l) and the inner wall (162d) is also the boundary between the first substrate (120) and the second substrate (140), and is the boundary region (103) of the space (160).

[0035] Additionally, as shown in FIG. 6, the space (160) may be formed by joining a groove (160f) formed in the first substrate (120) and a groove (160s) formed in the second substrate (140). An insulating film (150) is provided to cover and contact the inner wall (162) (inner wall (162r, 162l, 162u and 162d)) of the space (160). A boundary region (105) includes the boundary of the space (160) between the first substrate (120) and the second substrate (140). Specifically, the boundary region (105) includes the end of the space (160) side of the joining surface (146) of the first substrate (120) and the second substrate (140), and includes the boundary between the inner wall (162r) and the inner wall (162d). Although the city has been omitted, the inner wall (162l), like the inner wall (162r), includes the boundary region (105) between the first substrate (120) and the second substrate (140). Accordingly, the insulating film (150) is provided to be in contact with and cover the boundary region (105).

[0036] For example, the thickness of the laminated substrate (110) (first substrate (120) and second substrate (140)) is about 30 mm. Also, for example, the thickness (Tu, Tc, Ts, Tff and Tsf) of the insulating film (150) is 0.1 μm or more and 20 μm or less. The thickness (Tu, Tc, Ts, Tff and Tsf) of the insulating film (150) of the stage (100) is about 5 μm. The thickness (Tu, Tc, Ts, Tff and Tsf) of the insulating film (150) is sufficiently thinner than the thickness of the laminated substrate (110) (first substrate (120) and second substrate (140)).

[0037] Here, with reference to FIG. 4, a stage in a conventional example is described. For example, the first substrate (120) included in the stage in the conventional example comprises an anodized aluminum (150p), and the anodized aluminum (150p) is formed on a first surface (122), a section (101c-1), a second surface (124), a section (101c-2), and a third surface (126). Additionally, the anodized aluminum (150p) includes cracks (gaps) (105p). Since the anodized aluminum (150p) is formed in a vertical direction for each surface, cracks (105p) are easily formed on the section (101p) (section).

[0038] The insulating film (150) containing boehmite has high continuity with the first surface (122), the corner (101c-1), the second surface (124), the corner (101c-2), and the third surface (126), and also has high adhesion. As a result, the insulating film (150) makes it difficult to form gaps, such as cracks, on the first surface (122), the corner (101c-1), the second surface (124), the corner (101c-2), and the third surface (126). Therefore, since the laminated substrate (110) (first substrate (120) and second substrate (140)) is covered by the insulating film (150) and is not exposed, the insulation of the laminated substrate (110) is higher than that of a substrate containing cracks (gaps).

[0039] Additionally, the insulating film (150) containing boehmite is also formed in the boundary regions (103 and 105). That is, the insulating film (150) containing boehmite can sufficiently cover the boundaries of the substrate. Furthermore, for example, even if the boundary regions (103 and 105) include a misalignment of the bonding between the first substrate (120) and the second substrate (140), the insulating film (150) containing boehmite can be formed (deposited) to reflect said misalignment. That is, the insulating film (150) containing boehmite can be formed to sufficiently cover the misalignment during the bonding of the substrates. Accordingly, the insulating film (150) containing boehmite has high coverage performance for the laminated substrate (110) (first substrate (120) and second substrate (140)).

[0040] Here, as an example of the measurement results, the measurement results of the breakdown voltage and surface roughness of the insulating film (150) are explained with reference to Tables 1 and 2. In the sample used for measurement, the insulating film (150) containing boehmite is formed on a substrate based on an aluminum alloy (A6061). Meanwhile, in the sample of the conventional example, the insulating film containing anodizing is formed on a substrate based on an aluminum alloy (A6061). As shown in Table 1, the breakdown voltage of the insulating film (150) containing boehmite is at least five times that of the conventional example (insulating film containing anodizing). Therefore, an improvement in the withstand voltage of the insulating film (150) containing boehmite is recognized. In addition, as shown in Table 2, the surface roughness of the insulating film (150) containing boehmite is about one-fourth that of the conventional example (insulating film containing anodizing). Accordingly, an improvement in the uniformity or flatness of the surface of the insulating film (150) containing boehmite is recognized.

[0041] [Table 1]

[0042]

[0043] [Table 2]

[0044]

[0045] In addition, as an example of the measurement results, the dependence of the breakdown voltage and surface roughness of the insulating film (150) on the manufacturing temperature (set temperature) is explained with reference to Table 3. In the sample of Example 1 used for measurement, an insulating film (150) containing boehmite is formed on a substrate based on an aluminum alloy (A6061) by a steam process with a set temperature of 200 degrees and a set heating time of 24 hours. In the samples of Examples 2 and 3 used for measurement, the set temperature is different from that of the sample in Example 1, and other than the set temperature, they are identical to the sample in Example 1. Specifically, the set temperatures of the samples in Examples 2 and 3 used for measurement are 240 degrees and 280 degrees, respectively. As shown in Table 3, the higher the manufacturing temperature, the higher the breakdown voltage (breakdown voltage), and the lower the manufacturing temperature, the more uniform the surface tends to be. (Illegible)

[0046] [Table 3]

[0047]

[0048] As described above, the stage (100) includes a first surface (122), a corner (101c-1), a second surface (124), a corner (101c-2), and a third surface (126), a space (160), a through hole (180), and an opening (170), all of which are densely formed with an insulating film (150) containing boehmite. Additionally, the stage (100) includes boundary regions (103 and 105) in which an insulating film (150) containing boehmite is densely formed. That is, the surface of the laminated substrate (110) is densely covered by an insulating film (150) that contains boehmite and does not contain cracks (gaps), thereby suppressing the exposure of the laminated substrate (110) (first substrate (120) and second substrate (140)). As a result, the insulation, voltage withstand characteristics, corrosion resistance, or plasma resistance of the stage (100) is improved. In addition, the insulation, dielectric strength, corrosion resistance, or plasma resistance at the location where the bonding of the first substrate (120) and the second substrate (140) is misaligned is improved. Furthermore, because the uniformity or flatness of the insulating film (150) is high, the contact area between the insulating film (150) and the laminated substrate (110) increases. As a result, when the laminated substrate (110) is heated or cooled, the thermal conductivity from the laminated substrate (110) to the insulating film (150) is improved.

[0049] [1-3. Production of Stage (100)]

[0050] Referring to FIGS. 7 to 9, the method of manufacturing the stage (100) is described. FIG. 7 is a schematic cross-sectional view showing the outline of a membrane-forming device (300) for explaining the method of manufacturing the stage (100). FIG. 8 is a flowchart showing the method of manufacturing the stage (100). FIG. 9 is a schematic cross-sectional view showing the outline of a membrane-forming device (300) for explaining the method of manufacturing the stage (100). Configurations identical or similar to FIGS. 1 to 6 are described as necessary.

[0051] First, the configuration of the tabernacle device (300) is described with reference to FIG. 7. The tabernacle device (300) includes a first chamber (310), a second chamber (340), and a control circuit (360).

[0052] The first chamber (310) provides a space for heating or pressurizing the second chamber (340). Specifically, the first chamber (310) includes a cover (312), a container (314), an exhaust device (324), an inlet pipe (326), a valve (328), a storage stand (320), and a heater (322). Additionally, the first chamber (310) includes an upper space (316) above the storage stand (320) and a lower space (318) below the storage stand. The cover (312) is mounted to the container (314) so ​​as to be openable and closable, thereby making the first chamber (310) sealable. The exhaust device (324) is connected to the container (314). For example, the exhaust device (324) can exhaust gases such as air or water vapor within the upper space (316) to set the inside of the first chamber (310) to a reduced pressure atmosphere. An inlet pipe (326) is mounted on the container (314). The inlet pipe (326) can introduce gas into the upper space (316) via a valve (328). For example, by introducing gas into the upper space (316), the upper space (316) can be set to a high-pressure atmosphere. A mounting base (320) is mounted on the container (314) and configured to separate the space within the container (314) into an upper space (316) and a lower space (318), and to allow for the placement of a second chamber (340). A heater (322) is placed in the lower space (318).

[0053] The second chamber (340) provides a space for forming a predetermined film on the stage (100). Specifically, the second chamber (340) includes a cover (342), a container (344), a mounting stand (350), and an exhaust device (352). Additionally, the second chamber (340) includes a space (346). The cover (342) is mounted to the container (344) so ​​as to be openable and closable, thereby making the second chamber (340) sealable. The space (346) is formed by the cover (342) coming into contact with the container (344). The exhaust device (352) is connected to the container (344). For example, the exhaust device (352) can exhaust air, water vapor, etc., within the space (346) to set the space (346) to a reduced pressure atmosphere. The mounting stand (350) is installed in the space (346). The mounting stand (350) includes a mesh or grid-like structure. When forming the insulating film (150), the laminated substrate (110) is placed on the mounting base (350), and water or an aqueous solution is supplied to the space (346). For example, the method of manufacturing the stage (100) includes supplying pure water (354) to the space (346) as an example of water or an aqueous solution.

[0054] Additionally, water or an aqueous solution may contain additives. For example, the additives may be surfactants, triethanolamine, etc. For example, if the manufacturing method of the stage (100) includes supplying water containing a surfactant to the space (346), the insulating film (150) containing boehmite is uniformly formed on the laminated substrate (110) because the surfactant lowers the surface tension of the water. Also, for example, if the manufacturing method of the stage (100) includes supplying water containing triethanolamine to the space (346), the insulating film (150) containing boehmite is formed on the laminated substrate (110) faster than in the manufacturing method that does not include triethanolamine because the pH of the water is maintained at a weakly alkaline level.

[0055] Meanwhile, although the city has been omitted, the second chamber (340) may include a supply pipe for water or aqueous solution capable of supplying water or aqueous solution to the space (346) via the first chamber (310), and a valve connected to said supply pipe. When the valve is opened, water or aqueous solution is supplied to the space (346) via the first chamber (310), and when the valve is closed, the supply of water or aqueous solution to the space (346) is stopped. By closing the valve, backflow of water or aqueous solution into said supply pipe can be prevented.

[0056] Additionally, although the city has been omitted, the second chamber (340) may include a steam spray device equipped with a steam spray pipe capable of supplying steam to the space (346) via the first chamber (310). Additionally, high-pressure steam generated from a separate facility may be introduced directly without passing through the first chamber (310). The steam spray device may include a valve connected to the steam spray pipe. Similar to a supply pipe for water or an aqueous solution, when the valve is opened, steam is supplied to the space (346) via the first chamber (310), and when the valve is closed, the supply of steam to the space (346) is stopped. By closing the valve, backflow of steam into the steam spray pipe can be suppressed.

[0057] For example, the control circuit (360) includes a CPU, memory, relay circuit, timer, etc. For example, a user can operate the control circuit (360) to set the temperature, heating time, pressure, pressurization time, or depressurization time of the first chamber (310) or the second chamber (340). The control circuit (360) can control the first chamber (310) or the second chamber (340) based on said settings. The control circuit (360) is connected to a heater (322). The control circuit (360) can control the heat generation of the heater (322) based on the set temperature and heating time. By controlling the heater (322) with the control circuit (360), the inside of the first chamber (310) can be heated. Meanwhile, although the city has been omitted, a pressure gauge and a thermocouple are installed in the first chamber (310) and the second chamber (340) to monitor the pressure and temperature within the first chamber (310) and the second chamber (340). The pressure gauge and the thermocouple are connected to a control circuit (360), and the control circuit (360) can monitor and store the pressure and temperature.

[0058] Additionally, although omitted, the control circuit (360) may be connected to the exhaust device (324) and the exhaust device (352) to automatically control the opening and closing of the valves included in the exhaust device (324) and the exhaust device (352). For example, the control circuit (360) may control the opening and closing of the valves based on the set pressure and pressurization time, and at the same time control the pressure in the first chamber (310) or the second chamber (340).

[0059] Meanwhile, the membrane device (300) includes one control circuit (360), but the number of control circuits (360) is not limited to one. For example, the membrane device (300) may include three control circuits that control each of the heater (322), the exhaust device (324), and the exhaust device (352). By controlling each of the heater (322), the exhaust device (324), and the exhaust device (352) with different control circuits, the temperature, heating time, pressure, pressurization time, or depressurization time can be set more precisely.

[0060] Additionally, the film deposition device (300) includes a first chamber (310) and a second chamber (340), but the number of chambers is not limited to two. For example, if the film deposition device (300) is a device that includes a configuration in which an insulating film (150) containing boehmite can be formed on a laminated substrate (110) by a steam process described later, the number of chambers may be one (e.g., the first chamber (310)). The manufacturing method of the stage (100) is less when the film deposition device (300) includes one chamber than when the film deposition device (300) includes two chambers. Therefore, when the film deposition device (300) includes one chamber, the manufacturing method of the stage (100) can be simplified compared to when the film deposition device (300) includes two chambers.

[0061] Next, with reference to FIGS. 7 to 9, a method for manufacturing a stage (100) will be described. For example, the method for manufacturing a stage (100) includes steps S110 to S130.

[0062] When the production of the stage (100) begins, the laminated substrate (110) is installed on the mounting base (350) (step S110). Also, in step S110, pure water (354) is supplied to the space (346). The pure water (354) is supplied to the space (346) to the extent that it does not come into contact with the laminated substrate (110). Also, in step S110, the second chamber (340) and the first chamber (310) are sealed.

[0063] Next, the first chamber (310), the second chamber (340), the inside of the first chamber (310), or the inside of the second chamber (340) is heated and pressurized (step S120). For example, a control circuit (360) controls a heater (322) based on a set temperature so that the first chamber (310) or the second chamber (340) is heated, and the pure water (354) inside the second chamber (340) is heated and boiled, so that steam (356) (Fig. 9) is generated in the space (346). For example, at this time, the valves (not shown) of the exhaust devices (352 and 324) are closed to facilitate pressurization inside the second chamber (340). When the pressure and temperature of the second chamber (340) (space (346)) reach the set pressure and temperature, the control circuit (360) controls the pressure and temperature in the first chamber (310) or the second chamber (340) to be maintained at the set pressure and temperature based on a pressure gauge and thermocouple, etc.

[0064] Here, for example, the set temperature may be 130 degrees or higher and 320 degrees or lower, preferably 250 degrees or higher and 300 degrees or lower, the set heating time may be 10 minutes or higher and 72 hours or lower, and the set pressure may be 0.2 MPa or higher and 12.4 MPa or lower. As an example, the method of manufacturing the stage (100) is such that the set temperature is 280 degrees, the set heating time is 24 hours, and the set pressure is 7 MPa. For example, the method of manufacturing the stage (100) may include heating pure water to form a film of good quality boehmite over a long period of time, or may include introducing preheated steam into the second chamber (340) to form a film of good quality boehmite in a short period of time.

[0065] Next, an insulating film (150) containing boehmite is formed on the laminated substrate (110) (first substrate (120) and second substrate (140)) (step S130). For example, the region (370) shown in FIG. 9 is an enlarged region of each part of the first substrate (120). Also, the region (380) shown in FIG. 9 is an enlarged region of the space (160). As shown in the regions (370 and 380), water vapor (356) is filled around the first surface (122), the second surface (124), the third surface (126), and the inner wall (162) (inner wall (162r, 162l, 162u and 162d)) of the space (160). Additionally, water vapor reacts with the aluminum on each side to form an insulating film (150) containing boehmite (aluminum hydroxide) on each side (see FIG. 3 and FIG. 5).

[0066] Step S130 includes forming an insulating film (150) containing boehmite on the fourth surface (142). Since the mounting base (350) includes a mesh or grid-like structure, water vapor (356) can penetrate between the fourth surface (142) of the second substrate (140) (the side in contact with the mounting base (350)) and the mounting base (350). Thus, an insulating film (150) containing boehmite is formed on the fourth surface (142).

[0067] In this way, the stage (100) is manufactured. Meanwhile, the control circuit (360) controls the heater (322) and the exhaust device (352 and 324) based on the set heating time, pressurization time, or depressurization time. For example, when the temperature and pressure of the first chamber (310) and the second chamber (340) return to near normal, the manufacturing of the stage (100) is terminated.

[0068] As described above, by manufacturing the stage (100) using a manufacturing method, the surface of the laminated substrate (110) can be densely covered by an insulating film (150) that contains boehmite and does not contain cracks (gaps). The manufacturing method of the stage (100) includes forming an insulating film (150) that contains boehmite and does not contain cracks (gaps) on the laminated substrate (110) using steam. The manufacturing method of the stage (100) is sometimes referred to as a steam process.

[0069] For example, in the conventional example described with reference to FIG. 4, the anodized aluminum (150p) of the stage is formed using acid, so the emission of carbon dioxide and treatment of waste liquid are required, making it difficult to clean up the manufacturing process for forming the anodized aluminum (150p). In addition, it is difficult to form the anodized aluminum (150p) of the stage in the conventional example on the inner walls or side walls of narrow spaces such as the space (160), through hole (180) (Fig. 2), and opening (170) (Fig. 2), or on the inner walls of closed spaces.

[0070] Meanwhile, since the manufacturing method of the stage (100) uses steam, the manufacturing process can be made clean.

[0071] Additionally, since the method of manufacturing the stage (100) uses steam, the steam can penetrate into the space (160), through hole (180) (Fig. 2), and opening (170) (Fig. 2). As a result, the method of manufacturing the stage (100) includes forming an insulating film (150) of the stage (100) in the space, groove, hole, through hole, etc., where it was difficult to form anodized aluminum as in the conventional example. Accordingly, the insulating film (150) containing boehmite has high continuity with the space (160), through hole (180), and opening (170), and also has high adhesion, so it is difficult for cracks (gaps) to form in the space (160), through hole (180), and opening (170).

[0072] Additionally, the insulating film (150), which contains boehmite and does not contain cracks (gaps), may be polished by blasting. The insulating film (150) is flattened by polishing. For example, by flattening, the contact area between the stage (100) and the substrate (silicon wafer, semiconductor wafer, etc.) increases when the substrate is placed on the stage (100). As a result, the thermal conductivity from the stage (100) to the substrate is improved.

[0073] [2. Second Embodiment]

[0074] Referring to FIG. 10, the configuration of a semiconductor manufacturing apparatus according to a second embodiment of the present invention is described. The semiconductor manufacturing apparatus includes a stage (100). For example, the semiconductor manufacturing apparatus is a film processing apparatus (200). The film processing apparatus (200) is a so-called etching apparatus. Meanwhile, the configuration of the film processing apparatus (200) described with reference to FIG. 10 is an example, and the configuration of the film processing apparatus (200) is not limited to the configuration shown in FIG. 10. Furthermore, the film processing apparatus (200) is not limited to an etching apparatus. In describing the film processing apparatus (200), configurations identical or similar to the configuration described with reference to FIG. 1 to FIG. 9 are described as necessary.

[0075] FIG. 10 is a schematic cross-sectional view of a film processing device (200). The film processing device (200) can perform dry etching on various films. The film processing device (200) includes a chamber (202). The chamber (202) provides a space for performing etching on a film, such as a conductor, an insulator, or a semiconductor, formed on a substrate.

[0076] An exhaust device (204) is connected to the chamber (202). The exhaust device (204) can set the inside of the chamber (202) to a reduced pressure atmosphere. An inlet pipe (206) is provided in the chamber (202). The inlet pipe (206) can introduce a reaction gas for etching into the chamber (202) via a valve (208). For example, the reaction gas may be carbon tetrafluoride (CF4), octafluorocyclobutane (c-C4F8), or decafluorocyclopentane (c-C5F8). 10It is a fluorine-containing organic compound such as hexafluorobutadiene (C4F6). Additionally, as an optional configuration, a helium inlet tube may be provided in the chamber (202). For example, the helium inlet tube can flow helium gas into the gap between the stage (100) and the substrate placed on the stage (100) by interposing the through hole (180) described in “1-1”. As a result, the film processing device (200) including the helium inlet tube can efficiently transfer thermal energy from the stage (100) to the substrate.

[0077] A microwave source (212) is provided at the top of the chamber (202) via a waveguide (210). The microwave source (212) includes an antenna or the like for supplying microwaves. For example, the microwave source (212) outputs high frequencies such as microwaves of 2.45 GHz and radio waves (RF) of 13.56 MHz. Microwaves generated from the microwave source (212) are propagated to the top of the chamber (202) by the waveguide (210) and introduced into the interior of the chamber (202) via a window (214) containing quartz, ceramic, etc. The reaction gas is plasmafied by the microwaves, and the film is etched by electrons, ions, radicals, etc. contained in the plasma.

[0078] A stage (100) for mounting a substrate is provided at the bottom of the chamber (202). A power supply (224) is connected to the stage (100). A voltage equivalent to high-frequency power is applied to the stage (100), and an electric field generated by microwaves is formed in a direction perpendicular to the surface of the stage (100) and the surface of the substrate. A magnet (216), a magnet (218), and a magnet (220) are provided on the top or side of the chamber (202). The magnets (216), the magnet (218), and the magnet (220) may be permanent magnets or electromagnets having an electromagnetic coil. By the magnets (216), the magnet (218), and the magnet (220), a magnetic field component parallel to the surface of the stage (100) and the substrate is formed, and through the coupling with the electric field generated by microwaves, electrons in the plasma receive a Lorentz force, resonate, and are bound to the surface of the stage (100) and the substrate. As a result, high-density plasma is generated on the substrate surface.

[0079] For example, if the stage (100) is equipped with a sheath heater, a heater power supply (230) for controlling the sheath heater is connected to the stage (100). As an optional configuration, a power supply (226) for an electrostatic chuck for fixing a substrate to the stage (100), a temperature controller (228) for controlling the temperature of a medium circulating inside the stage (100), and a rotation control device (not shown) for rotating the stage (100) may be connected to the stage (100). For example, by using the temperature controller (228), the temperature-controlled medium can be flowed into the space (160) to control the temperature of the stage (100).

[0080] The film processing device (200) according to the second embodiment includes a stage (100). As a result, the film processing device (200) can uniformly heat the substrate and also precisely control the heating temperature. As a result, by using the film processing device (200), various films formed on the substrate can be uniformly etched. In addition, since the stage (100) has excellent insulation performance, the withstand voltage of the film processing device (200) is improved with respect to the voltage applied to the substrate. As a result, by using the film processing device (200), contacts with a high aspect ratio can be formed on the substrate, and films with a high aspect ratio can be formed on the substrate. Furthermore, since the film processing device (200) including the stage (100) with excellent insulation and withstand voltage has excellent long-term reliability, the user can reduce the number of maintenance cycles for the film processing device (200).

[0081] [3. Third Embodiment]

[0082] Referring to FIGS. 11 to 13, a shower head (400) according to a third embodiment of the present invention is described as an example of a component of a semiconductor manufacturing apparatus. FIG. 11 is a perspective view showing the configuration of the shower head (400). FIG. 12 is a schematic diagram showing a cross-section along A1-A2 of the shower head (400). FIG. 13 is a schematic diagram showing a cross-section along B1-B2 of the shower head (400). Configurations identical or similar to FIGS. 1 to 10 will be described as necessary.

[0083] For example, a shower head (400) is a semiconductor manufacturing component for spraying process gas into a semiconductor manufacturing device.

[0084] As shown in FIGS. 11 to 13, the shower head (400) includes a laminated substrate (405) and an insulating film (150). The laminated substrate (405) includes a configuration in which a first substrate (410), a second substrate (420), and a third substrate (430) are laminated. For example, the first substrate (410), the second substrate (420), and the third substrate (430) are joined by diffusion bonding.

[0085] As shown in FIGS. 12 and 13, the first surface (410) includes a first surface (415a), a second surface (415b) opposite to the first surface (415a), a third surface (415c), and a fourth surface (415d). The fourth surface (415d) is formed connected to the first surface (415a) and the third surface (415c), and the third surface (415c) is in contact with the second surface (415b). For example, the fourth surface (415d) has a C-chamfered shape. The fourth surface (415d) may also have an R-chamfered shape with curvature. Specifically, the fourth surface (415d) has the same configuration as the third surface (126) according to the first embodiment (see FIGS. 2 and 3). Although detailed drawings are omitted here, a section identical to section (101c-1) (see FIG. 3) according to the first embodiment is provided between the first surface (415a) and the fourth surface (415d), and a section identical to section (101c-2) (see FIG. 3) according to the first embodiment is provided between the fourth surface (415d) and the third surface (415c).

[0086] Additionally, the first substrate (410) includes a plurality of inlet / outlet holes (411) and a plurality of spaces (413). The plurality of inlet / outlet holes (411) are opened from the first surface (415a), and the plurality of spaces (413) are connected to the inlet / outlet holes (411). The plurality of spaces (413) include a space (413a) and a plurality of spaces (413b) formed to surround the space (413a). Although not illustrated, the spaces (413a and 413b) have a circular groove shape. The space (413a) and the space (413b) are connected within the first substrate (410), and adjacent spaces (413b) among the plurality of spaces (413b) are connected within the first substrate (410). A plurality of inlet / outlet holes (411) penetrate from the first surface (415a) to the second surface (415b) through a plurality of spaces (413).

[0087] The second surface (420) includes a first surface (425a), a second surface (425b) opposite to the first surface (425a), and a third surface (425c). The third surface (425c) is in contact with the first surface (425a) and the second surface (425b). The first surface (425a) is joined to the second surface (415b).

[0088] Additionally, the second device (420) includes a plurality of inlet / outlet holes (421), a plurality of spaces (423), and an inlet / outlet hole (426). The plurality of inlet / outlet holes (421) are opened from the first surface (425a), the inlet / outlet hole (426) is opened from the second surface (425b), and the plurality of spaces (423) are connected to the inlet / outlet holes (421 and 426). Additionally, each of the plurality of inlet / outlet holes (421) is connected to the space (413b). Although not illustrated, the plurality of spaces (423) are radial grooves formed by the intersection of a plurality of straight grooves. The space (423) forming one of the grooves among the plurality of straight grooves connects the through holes (421a and 421b) located furthest apart from each other. The plurality of inlet / outlet holes (421) are connected to the inlet / outlet holes (426) via the plurality of spaces (423).

[0089] The third surface (430) includes a first surface (435a), a second surface (435b) opposite to the first surface (435a), a third surface (435c), and a fourth surface (435d). The fourth surface (435d) is formed connected to the second surface (435b) and the third surface (435c), and the third surface (435c) is in contact with the first surface (435a). For example, the fourth surface (435d) has the same configuration as the fourth surface (415d) and has a C-chamfered shape. The first surface (435a) is joined to the second surface (425b).

[0090] Additionally, the third material (430) includes an inlet / outlet hole (431). The inlet / outlet hole (431) is opened to penetrate from the first surface (435a) to the second surface (435b). Additionally, the inlet / outlet hole (431) is connected to the inlet / outlet hole (426).

[0091] Accordingly, the laminated substrate (405) includes a configuration in which a plurality of inlet / outlet holes (411), a plurality of spaces (413), a plurality of inlet / outlet holes (421), a space (423), an inlet / outlet hole (426), and an inlet / outlet hole (431) are connected. The plurality of inlet / outlet holes (411), a plurality of spaces (413), a plurality of inlet / outlet holes (421), a space (423), an inlet / outlet hole (426), and an inlet / outlet hole (431) are flow paths for flowing a medium into the shower head (400). The spaces (413) and spaces (423) may be referred to as holes, connecting holes, etc., just like the space (160). For example, the medium is a process gas.

[0092] The insulating film (150) is provided to cover and contact the first surface (415a), the third surface (415c), the fourth surface (415d), the third surface (425c), the fourth surface (435d), the third surface (435c), and the second surface (435b). Additionally, the insulating film (150) is provided on the inner wall (412) of each of the plurality of inlet / outlet holes (411), the inner wall (414) of each of the plurality of spaces (413) (e.g., inner wall (414a and 414b)), the inner wall (422) of each of the plurality of inlet / outlet holes (421) (e.g., inner wall (422a and 422b)), the inner wall (424) of each of the plurality of spaces (423), the inner wall (427) of the inlet / outlet hole (426), and the inner wall (432) of the inlet / outlet hole (431). That is, the insulating film (150) is provided not only on the surface of the laminated substrate (405), such as the first surface (415a), the third surface (415c), the fourth surface (415d), the third surface (425c), the fourth surface (435d), the third surface (435c), and the second surface (435b), but also on the inner wall of the inlet / outlet hole and the inner wall of the space, and on the inner wall of the flow path, etc., where the surface is not exposed.

[0093] Meanwhile, although the city is omitted, the multiple spaces (413 and 423) include the same boundary area as the space (160). For example, the boundary area of ​​the space (413a) may include the boundary between the first substrate (410) and the second substrate (420), and the boundary between the end of the space (413) side of the joint surface between the first substrate (410) and the second substrate (420) (inner wall (414a) and the first surface (425a)).

[0094] The material used for the first material (410), the second material (420), and the third material (430) is the same material as the material used for the first material (120) and the second material (130).

[0095] Additionally, the insulating film (150) in the shower head (400) has the same configuration as the insulating film (150) in the stage (100). For example, the material used for the insulating film (150) of the shower head (400) is boehmite.

[0096] For example, the first substrate (410), the second substrate (420), and the third substrate (430) are joined by diffusion bonding after forming a space (413 and 423) and an inlet / outlet hole (411, 421, 426 and 431). Additionally, after bonding, an insulating film (150) is formed on the bonded substrate (405) by the manufacturing method described in “1-3. Manufacturing of stage (100)”.

[0097] Meanwhile, the first substrate (410), the second substrate (420), and the third substrate (430) may have an insulating film (150) formed by the manufacturing method described in “1-3. Manufacturing of Stage (100)” before bonding, after forming the space (413 and 423) and the inlet / outlet holes (411, 421, 426 and 431). In this case, the insulating film (150) formed on the second surface (415b) of the first substrate (410), the insulating film (150) formed on the first surface (425a) and second surface (425b) of the second substrate (420), and the insulating film (150) formed on the first surface (435a) of the third substrate (430) are polished and removed, and then each substrate is bonded.

[0098] Additionally, as an example, the laminated substrate (405) includes a configuration in which three substrates are bonded together, and the laminated substrate (405) may include a configuration in which two substrates are bonded together, similar to the laminated substrate (110), and may include a configuration in which four or more substrates are bonded together.

[0099] Here, in the process of manufacturing a shower head, if multiple substrates are joined and then perforated, cutting chips may fall into the opening and groove, or burrs may be generated. For example, if a shower head manufactured in this manner is used, the cutting chips or burrs may be released to the outside along with reaction gases. As a result, the film formed using the shower head causes film formation defects. On the other hand, the shower head (400) according to the third embodiment is manufactured by forming inlet / outlet holes and spaces in each substrate and then joining each substrate by diffusion bonding, so the generation of cutting chips and burrs can be suppressed. As a result, the shower head (400) according to the third embodiment includes a configuration capable of suppressing the occurrence of film formation defects.

[0100] Additionally, for example, the shower head (400) described above can introduce the medium from the inlet / outlet port (431), which is the inlet port of the medium, and distribute it through the flow path (spaces (413 and 423), etc.), and discharge it from the multiple inlet / outlet ports (411), which are the outlet ports of the medium.

[0101] In addition, as described above, the shower head (400) includes a configuration in which an insulating film (150) is formed on the surface of the laminated substrate (405), the inner wall of the inlet / outlet hole within the laminated substrate (405), and the inner wall of the space. As a result, the shower head (400) can perform the same function as the stage (100).

[0102] Meanwhile, semiconductor manufacturing components such as a stage (100) and a shower head (400) that include a Euro are sometimes referred to as a Euro forming plate.

[0103] [4. Fourth Embodiment]

[0104] With reference to FIG. 14, the configuration of a semiconductor manufacturing apparatus according to a fourth embodiment of the present invention is described. The semiconductor manufacturing apparatus according to the fourth embodiment includes a stage (100) and a shower head (400). For example, the semiconductor manufacturing apparatus is a chemical vapor deposition (CVD) apparatus (500). The configuration of the CVD apparatus (500) described with reference to FIG. 14 is an example, and the configuration of the CVD apparatus (500) is not limited to the configuration shown in FIG. 14. In describing the CVD apparatus (500), configurations identical or similar to those described with reference to FIG. 1 to FIG. 13 are described as necessary.

[0105] FIG. 14 is a schematic cross-sectional view of a CVD apparatus (500). The CVD apparatus (500) includes a chamber (502). The chamber (502) provides a space for chemically reacting the reaction gas (also called the reaction gas) upon introduction of the process gas and chemically forming multiple films on a substrate. The chamber (502), like the stage (100) and the shower head (400), may have an insulating film (150) formed on its inner wall.

[0106] An exhaust device (504) is connected to the chamber (502). The exhaust device (504) can reduce the pressure inside the chamber (502). An inlet pipe (506) is provided in the chamber (502). The exhaust device (504) and the inlet pipe (506), like the stage (100) and the shower head (400), may have an insulating film (150) formed on the inner wall of each pipe. A shower head (400) is provided at the top of the chamber (502). The inlet pipe (506) can supply reaction gas for film formation to the shower head (400) via a valve (508). Reaction gas is introduced from the inlet / outlet port (431) of the shower head (400), which is connected to the inlet pipe (506) and serves as the inlet for the reaction gas. The reaction gas flows through the flow path (inlet / outlet port (426), space (423), inlet / outlet port (421), space (413), etc.) within the shower head (400) and is discharged into the chamber (502) from a plurality of inlet / outlet ports (411), which are outlets for the medium. The reaction gas may be various gases depending on the membrane being produced. Additionally, the reaction gas may be at room temperature and may be a liquid. For example, the reaction gas may be silane, dichlorosilane, tetraethoxysilane, tungsten fluoride, or trimethylaluminum. By using silane, dichlorosilane, or tetraethoxysilane, a thin film of silicon, silicon oxide, or silicon nitride can be formed. Additionally, by using tungsten fluoride or trimethylaluminum, a metal thin film of tungsten, aluminum, or aluminum oxide, or a metal oxide thin film can be formed.

[0107] A stage (100) for placing a substrate is provided at the bottom of the chamber (502). A high-frequency power supply (524) is connected to the stage (100) and the shower head (400). For example, when a voltage equivalent to the high-frequency power is applied between the stage (100) and the shower head (400), an electric field formed by microwaves is formed in a direction perpendicular to the surface of the stage (100) and the surface of the substrate (the side where the shower head (400) is provided). For example, a magnet (520) is provided on the top or side of the chamber (502). In FIG. 14, as an example, the magnet (520) is provided on the side of the chamber (502). The magnet (520) may be a permanent magnet or an electromagnet having an electromagnetic coil. For example, a magnetic field component parallel to the stage (100) and the substrate surface is formed by a magnet (520), and by coupling with an electric field from microwaves, electrons in the plasma receive a Lorentz force and resonate, and are bound to the stage (100) and the substrate surface. As a result, a high-density plasma is generated on the substrate surface.

[0108] For example, if the stage (100) is equipped with a sheath heater, a heater power supply (530) for controlling the sheath heater is connected to the stage (100). As an optional configuration, a power supply (526) for an electrostatic chuck for fixing a substrate to the stage (100), a temperature controller (528) for controlling the temperature of a medium flowing inside the stage (100), and a rotation control device (not shown) for rotating the stage (100) may be connected to the stage (100). For example, by using the temperature controller (528), a medium with controlled temperature can be flowed into the space (160) to control the temperature of the stage (100).

[0109] A CVD device (500) according to the fourth embodiment includes a stage (100) covered with boehmite and a shower head (400). The CVD device (500) can uniformly heat a substrate and also precisely control the heating temperature, and can uniformly release reaction gas into a chamber (502). As a result, by using the CVD device (500), multiple films can be uniformly formed on the substrate. In addition, since the stage (100) and the shower head (400) have excellent insulation performance, the withstand voltage of the CVD device (500) is improved with respect to the voltage applied to the stage (100), the shower head (400), and the substrate. Furthermore, since the CVD device (500) including the stage (100) and the shower head (400) with excellent insulation and withstand voltage has excellent long-term reliability, the user can reduce the frequency of maintenance of the CVD device (500).

[0110] As embodiments of the present invention, the components of the semiconductor manufacturing apparatus, the method for manufacturing the components of the semiconductor manufacturing apparatus, and each configuration of the semiconductor manufacturing apparatus described above may be appropriately combined and implemented as long as they are not contradictory. Furthermore, as embodiments of the present invention, the stage, the method for manufacturing the stage, and each configuration of the semiconductor manufacturing apparatus described above may be appropriately interchangeable as long as they are not contradictory. In addition, additions, deletions, or design changes made by a person skilled in the art based on each embodiment are also included within the scope of the present invention, provided that they possess the gist of the present invention.

[0111] Furthermore, even if there are other effects different from those resulting from each of the embodiments described above, those that are obvious from the description in this specification or can be easily predicted by those skilled in the art are naturally understood to be caused by the present invention. Explanation of the symbols

[0112] 100: Stage, 101: Part, 101c-1: Part, 101c-2: Part, 101p: Part, 103: Boundary area, 105: Boundary area, 105p: Crack, 110: Laminated substrate, 120: First substrate, 122: First surface, 124: Second surface, 126: Third surface, 140: Second substrate, 142: Fourth surface, 144: Bonding surface, 146: Bonding surface, 150: Insulating film, 150p: Anodized aluminum, 160: Space, 160a: Space, 160e: Inlet / Outlet hole, 160f: Groove, 160s: Groove, 162: Inner wall, 162d: Inner wall, 162e: Inner wall, 162l: Inner wall, 162r: Inner wall, 162u: Inner wall, 170: Opening, 172: Inner wall, 180: Through hole, 182: Inner wall, 200: Film processing device, 202: Chamber, 204: Exhaust device, 206: Inlet pipe, 208: Valve, 210: Waveguide, 212: Microwave source, 214: Window, 216: Magnet, 218: Magnet, 220: Magnet, 224: Power supply, 226: Power supply, 228: Temperature controller, 230: Heater power supply, 300: Film formation device, 310: First chamber, 312: Cover, 314: Container, 316: Upper space, 318: Lower space, 320: Mounting stand, 322: Heater, 324: Exhaust device, 326: Inlet pipe, 328: Valve, 340: Second chamber, 342: Cover, 344: Container, 346: Space, 350: Storage rack, 352: Exhaust device, 354: Pure water, 356: Steam, 360: Control circuit, 370: Area, 380: Area, 400: Shower head, 405: Laminated substrate, 405: Bonded substrate, 410: First substrate, 410: First substrate, 411: Inlet / Outlet port, 412: Inner wall, 412b: Through hole, 413: Space, 413a: Space, 413b: Space, 414: Inner wall, 414a: Inner wall, 414b: Inner wall, 415a: First surface, 415b: Second surface, 415c: Third surface, 415d: Fourth side, 420: Second entry, 421: Inlet / Outlet hole, 421a: Through hole, 422: Inner wall, 422a: Inner wall, 422b: Inner wall,423: Space, 424: Inner wall, 425a: First surface, 425b: Second surface, 425c: Third surface, 426: Inlet / Outlet port, 427: Inner wall, 430: Third material, 431: Inlet / Outlet port, 432: Inner wall, 435a: First surface, 435b: Second surface, 435c: Third surface, 435d: Fourth surface, 500: CVD device, 502: Chamber, 504: Exhaust device, 506: Inlet pipe, 508: Valve, 520: Magnet, 524: High-frequency power supply, 526: Power supply, 528: Temperature controller, 530: Heater power supply,

Claims

Claim 1 A component of a semiconductor manufacturing apparatus comprising a substrate having a first surface and a second surface extending from the first surface, and a film comprising aluminum hydroxide continuously and directly provided on the first surface and the second surface. Claim 2 In claim 1, the above description is a component of a semiconductor manufacturing device comprising aluminum. Claim 3 A component of a semiconductor manufacturing apparatus according to claim 1, wherein the above description includes a space for flowing a medium, and the inner wall of the space is directly provided with a film containing aluminum hydroxide. Claim 4 A component of a semiconductor manufacturing apparatus according to claim 1, wherein the above description includes a space in which a heat source can be placed, and the inner wall of the space is directly provided with a film containing aluminum hydroxide. Claim 5 A component of a semiconductor manufacturing apparatus according to claim 1, wherein the above description additionally has a section connected to the boundary between the first surface and the second surface, and the film containing aluminum hydroxide is directly provided in the section. Claim 6 A method for manufacturing a component of a semiconductor manufacturing device, comprising: installing a substrate having a first surface and a second surface connected to the first surface in a chamber capable of heating and pressurizing; supplying water or an aqueous solution into the chamber; heating and pressurizing the chamber to generate water vapor within the chamber; and forming a film containing aluminum hydroxide continuously on the first surface and the second surface. Claim 7 In claim 6, the above description is a method for manufacturing a component of a semiconductor manufacturing device comprising aluminum. Claim 8 A method for manufacturing a component of a semiconductor manufacturing apparatus according to claim 6, wherein the above description includes a space for flowing a medium, and comprises forming a film containing aluminum hydroxide on the inner wall of the space. Claim 9 A method for manufacturing a component of a semiconductor manufacturing device according to claim 6, wherein the above description includes a space in which a heat source can be placed, and comprises forming a film containing aluminum hydroxide on the inner wall of the space. Claim 10 A method for manufacturing a component of a semiconductor manufacturing device according to claim 6, wherein the above description additionally has a section connected to the boundary between the first surface and the second surface, and the film containing aluminum hydroxide is directly provided in the section. Claim 11 A method for manufacturing a component of a semiconductor manufacturing apparatus, comprising: installing a substrate having a first surface and a second surface connected to the first surface in a chamber capable of heating and pressurizing; supplying steam into the chamber; heating and pressurizing the chamber; and forming a film containing aluminum hydroxide continuously on the first surface and the second surface. Claim 12 In claim 11, the above description is a method for manufacturing a component of a semiconductor manufacturing device comprising aluminum. Claim 13 A method for manufacturing a component of a semiconductor manufacturing apparatus according to claim 11, wherein the above description includes a space for flowing a medium, and comprises forming a film containing aluminum hydroxide on the inner wall of the space. Claim 14 A method for manufacturing a component of a semiconductor manufacturing device according to claim 11, wherein the above description includes a space in which a heat source can be placed, and comprises forming a film containing aluminum hydroxide on the inner wall of the space. Claim 15 A method for manufacturing a component of a semiconductor manufacturing device, wherein, in claim 11, the above description additionally has a section connected to the boundary between the first surface and the second surface, and the film containing aluminum hydroxide is directly provided in the section.

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