Leak detection assemblies for electronic device processing systems

Abstract

An embodiment of an electronic device processing system comprises a process chamber and a leak detection assembly coupled to the process chamber. The leak detection assembly includes a spectrometer configured to receive light collected from inside the process chamber and generate a light spectrum. Additionally, the system includes a controller coupled to the leak detection assembly configured to detect a leak in the process chamber based at least partially on the light spectrum generated by the spectrometer.

Description

Technology Field

[0001] This application claims the priority and benefit of U.S. provisional patent application No. 63 / 763,118, titled “Leak Detection Assemblies for Electronic Device Processing Systems,” filed February 25, 2025, the contents of which are incorporated by reference.

[0002] The present disclosure generally relates to the processing of electronic devices. More specifically, the present disclosure relates to systems and methods for detecting leakage in a process chamber for a substrate of an electronic device. Background Technology

[0003] The fabrication of electronic devices, such as relatively small semiconductor devices or large-area thin-film transistors, may involve a number of individual processes performed on semiconducting, dielectric, and conductive substrates. Examples of these processes include, in particular, oxidation, diffusion, ion implantation, thin-film deposition, cleaning, etching, and lithography.

[0004] Some embodiments disclosed herein relate to an electronic device processing system. In some embodiments that may be combined with other embodiments, the electronic device processing system comprises a process chamber. Additionally, the electronic device processing system comprises a leak detection assembly coupled to the process chamber, and the leak detection assembly comprises a spectrometer configured to receive light collected from inside the process chamber and generate a light spectrum. Additionally, the electronic device processing system comprises a controller coupled to the leak detection assembly configured to detect a leak in the process chamber based at least partially on the light spectrum generated by the spectrometer.

[0005] Some embodiments disclosed herein relate to a method for detecting leakage in a process chamber of an electronic device processing system. In some embodiments that may be combined with other embodiments, the method comprises the step of generating a light spectrum for light emitted from inside the process chamber. Additionally, the method comprises the step of detecting leakage in the process chamber based at least partially on the light spectrum.

[0006] Some embodiments disclosed herein relate to a leak detection assembly for a process chamber of an electronic device processing system. In some embodiments that may be combined with other embodiments, the leak detection system comprises a lens configured to collect light emitted from inside the process chamber. Additionally, the leak detection system comprises a spectrometer configured to be coupled to the lens and configured to generate a light spectrum based at least partially on the light. Furthermore, the leak detection system comprises a controller configured to be coupled to the spectrometer and configured to detect a leak in the process chamber based at least partially on the light spectrum. Brief explanation of the drawing

[0007] For a detailed description of various exemplary embodiments, reference will now be made to the accompanying drawings, where: FIG. 1 is a schematic diagram of a system for processing a substrate as part of a semiconductor manufacturing process comprising an in-situ leak detection assembly according to some embodiments; FIG. 2 is a schematic side cross-sectional view of a viewport and a lens of a leak detection assembly of the system of FIG. 1 according to some embodiments; FIG. 3 is a flowchart of a method for detecting leakage in a processing chamber according to some embodiments. Specific details for implementing the invention

[0008] Manufacturing electronic devices may involve a number of processes, particularly including oxidation, diffusion, ion implantation, thin film deposition, cleaning, etching, and lithography. Some of these processes may be performed in separate process chambers, where the substrate undergoes specific temperatures, pressures, and chemical environments that aid in performing the intended processes. Such chambers are sealed from the surrounding environment to prevent contamination of the substrate as well as to prevent harmful fluids or other materials from escaping the process chamber during operation.

[0009] Therefore, electronic device manufacturers may want to verify the integrity of the seals of specific process chambers. Conventional methods for detecting leaks in such process chambers can be time-consuming and may require additional equipment and / or controls. For example, conventional leak detection methods include a helium test, where helium gas is vented near connection points and pipelines of the process chamber (which may be operating under vacuum pressure conditions), and a concentration sensor is used to determine whether any of the helium gas has been drawn into the process chamber through a leak. Another conventional approach involves a so-called "rate of rise" test, in which the process chamber is sealed and an internal pressure sensor is monitored over time to determine the presence of a leak. All of these conventional processes can take a significant amount of time to perform (e.g., more than 20 minutes) and may involve the installation and use of additional equipment. Furthermore, some process chambers can have substantially larger internal volumes (such as those used in the manufacture of electronic devices for electronic displays), which can significantly increase the time required to perform conventional leak detection processes. Consequently, using these conventional approaches for process chamber leak detection can lead to reduced productivity, thus discouraging manufacturers from performing regular and frequent leak detection operations.

[0010] Accordingly, the embodiments disclosed herein include systems and methods for performing leak detection operations within an electronic device process chamber that can be implemented within the normal operation cycle of the process chamber. In some embodiments that can be combined with other embodiments, the systems and methods for leak detection may allow in-situ leak detection using components that may remain installed on the process chamber during normal operations and over a relatively short period (e.g., less than 1 minute in some embodiments). Thus, through the use of the embodiments disclosed herein, leak detection can be performed more frequently without sacrificing manufacturing throughput.

[0011] Embodiments of the systems and methods described herein may be particularly useful for process chambers for manufacturing large-area electronic devices used in electronic displays (e.g., liquid crystal displays (LCDs) or organic light-emitting diode (OLED) displays). Such large-area devices may include, for example, thin-film transistors formed on large-area substrates. Accordingly, process chambers for such large-area electronic devices may have relatively large internal volumes, which can complicate conventional leak detection methods as previously described. Therefore, embodiments of the systems and methods described herein may be particularly desirable for improving leak detection operations for such process chambers.

[0012] However, it should also be understood that the embodiments of the systems and methods described herein may also be useful for performing leak detection operations in process chambers used in the manufacture of other electronic devices, such as smaller semiconductor devices. Accordingly, the terms “electronic processing system(s)” and “process chamber(s)” may be used broadly herein to refer to systems and chambers configured for the manufacture of large-area electronic devices (e.g., for electronic displays) or smaller semiconductor devices (e.g., semiconductor chips, wafers, etc.), respectively.

[0013] FIG. 1 schematically illustrates a system (10) (e.g., “electronic device processing system”) for processing a substrate as part of an electronic device manufacturing process comprising an in-situ leak detection assembly (100) (or “leak detection assembly (100)”) according to some embodiments. Generally speaking, the system (10) includes a process chamber (12) (e.g., “substrate process chamber”) that may be configured to perform at least one of deposition processes, etching processes, plasma-enhanced deposition and / or etching processes, and thermal processes, among other processes performed in the manufacture of electronic devices (e.g., thin film transistors used in electronic displays, semiconductor chips, or wafers, etc.). Specifically, such processes may include, but are not limited to, rapid thermal processes (RTPs), chemical vapor deposition (CVD) processes, annealing processes, etc.

[0014] The process chamber (12) may include a first or upper end (12a) and a second or lower end (12b) opposite the upper end (12a). Additionally, the process chamber (12) may include one or more side walls (13) extending between the upper end (12a) and the lower end (12b). The process chamber (12) may define a processing volume (17) configured to be sealed and isolated from the surrounding environment (19) surrounding the process chamber (12).

[0015] A pedestal or "substrate support" (14) may be positioned near the lower end (12b) of the process chamber (12), and a distribution plate or "showerhead" (16) may be positioned near the upper end (12a) of the chamber. During operations using the process chamber (12), such as a plasma-enhanced deposition or etching process, plasma may be generated from a remote plasma source (RPS) (20) and inserted into the process chamber (12) through the upper end (12a). Next, the plasma is distributed through the showerhead (16) to contact a substrate positioned on the substrate support (14). Thus, contact between the plasma and the substrate can facilitate the deposition or etching process.

[0016] A substrate transfer passage (15) is defined on one of the side walls (13). The transfer passage (15) may include a slit valve door configured to provide access to a substrate (not shown) in and out of the process chamber (12) during operations.

[0017] A leak detection assembly (100) may be coupled to a process chamber (12) and configured to detect leaks in the process chamber (12) during operation. For example, the leak detection assembly (100) may include a spectrometer (102) (or "spectral analyzer") coupled to a lens (108). The lens (108) may be positioned and configured to collect and potentially magnify light from inside the process chamber (12). Next, the light collected by the lens (108) may be transmitted to the spectrometer (102) via a fiber optic cable (104), and thus, the spectrometer (102) may generate an optical spectrum for the collected light. Next, the optical spectrum may be used to determine the integrity of the seal for the process chamber (12) (including determining that a leak is currently present, or determining that the integrity of the seal is deteriorating and a leak will soon occur or worsen).

[0018] In some embodiments that can be combined with other embodiments, the lens (108) may be located outside the process chamber (12) and may collect light from inside the process chamber (12) through the viewport (110). The viewport (110) may be defined on one of the side walls (13) of the process chamber (12). For example, in some embodiments that can be combined with other embodiments, the viewport (110) may be located vertically between the showerhead (16) and the substrate support (14) along one of the side walls (13); however, other locations for the viewport (110) are considered. In some embodiments that can be combined with other embodiments, the lens (108) includes a multi-lens system configured to magnify the target (in some embodiments, for example, by approximately 2 to approximately 20 times).

[0019] In some embodiments that can be combined with other embodiments, the spectrometer (102) and / or lens (108) may include or be combined with a light source (106), such as a laser, to project onto a target location in the process chamber (12). In some embodiments that can be combined with other embodiments, a laser having a wavelength used for targeting, such as a laser having a wavelength of approximately 635 nanometers (nm), approximately 520 nm, or approximately 445 nm, may be used as the light source (106). The light source (106) may be used to help initially target an area within the process chamber (12) to be monitored during a leak detection operation, but may then be turned off to collect light emitted from inside the process chamber (12). Other targeting methods may be used instead of a laser. For example, a mechanical frame, bracket, or assembly may be used for targeting. Additionally, in some embodiments that can be combined with other embodiments, specific targeting may not be used for the lens (108) and / or spectrometer (102). Accordingly, in some embodiments, the light source (106) is optional.

[0020] In some embodiments that can be combined with other embodiments, more than one spectrometer (102) and / or lens (108) may be used to detect light inside the process chamber (12) as part of a leak detection operation. For example, in some embodiments that can be combined with other embodiments, a plurality of spectrometers (102) may collect light from inside the process chamber (12) through a plurality of viewports (110) located on different sidewalls (13) or along the same sidewall (13).

[0021] During the leak detection operation, plasma can be generated via the RPS (20) and directed into the process chamber (12) via the upper end (12a). Plasma can be generated from a precursor gas, such as hydrogen (H2), argon (Ar), etc. Next, the plasma can be traversed via the showerhead (16) toward the substrate support (14) as previously described. During this process, the spectrometer (102) can collect light emitted from inside the process chamber (12), such as from the plasma inside the process chamber (12), via the lens (108) and the fiber optic cable (104). Next, the spectrometer (102) can generate a light spectrum for the collected light, which can then be used to detect leaks in the process chamber (12). Specifically, the light spectrum generated by the spectrometer (102) can indicate elements present in the environment of the process chamber (12). If the process chamber (12) is properly sealed from the external environment, the optical spectrum should correspond to the contents of the plasma generated by the RPS (20). However, if a leak occurs in the process chamber (12), air (or other contaminants) from the external environment may move into the process chamber (12), which can be detected in the optical spectrum. Additionally, a leak in the process chamber (12) may also cause the resulting optical spectrum to show weaker peaks for plasma-associated elements (e.g., due to the leakage of plasma out of the process chamber (12) and / or dilution of the plasma by external contaminants as previously described). Thus, analysis of the optical spectrum generated by the spectrometer (102) can provide at least an indication of a leak within the process chamber (12).

[0022] Additionally, the leak detection operation using the leak detection assembly (100) may require very little time to perform. For example, in some embodiments that may be combined with other embodiments, the leak detection operation described herein may be performed in less than 1 minute, e.g., within about 20 seconds. Thus, the leak detection operation can be integrated into normal operations using the process chamber (12) without significantly affecting the overall manufacturing throughput. Furthermore, considering that, as previously described, conventional leak detection techniques often require longer processing times due to relatively larger chamber volumes, the relatively short time used to perform the leak detection operation using the leak detection assembly (100) may be particularly useful for larger process chambers (e.g., process chamber (12)) used in the manufacture of large-area substrates for electronic displays.

[0023] For example, in some embodiments that may be combined with other embodiments, the leak detection operation using the leak detection assembly (100) may be performed during a cleaning cycle of the process chamber (12). Specifically, after a deposition process in the process chamber (12), such as chemical vapor deposition (CVD) or plasma-enhanced CVD (PECVD), a film may be deposited not only on the substrate but also on the inner surfaces of the process chamber (12) (or components located inside). Thus, after the deposition process (or after a number of deposition processes), the process chamber (12) may be cleaned to remove these accumulated films to prevent future contamination. Such a cleaning process for the process chamber (12) may involve flowing plasma through the process chamber (12) to react with and remove the deposited films inside.

[0024] Consequently, in some embodiments that can be combined with other embodiments, the cleaning routine may be performed as part of the cleaning routine for the process chamber (12). Specifically, leak detection using the leak detection assembly (100) may be performed by detecting the optical spectrum associated with the plasma routed through the process chamber (12) as part of the cleaning operation. In some embodiments that can be combined with other embodiments, leak detection using the leak detection assembly (100) may be performed at the end of (or immediately thereafter) the cleaning operation for the process chamber (12). Without being limited to this theory or any other theory, performing the leak detection operation at or after the end of the cleaning operation may help ensure that potential contaminants (e.g., derived from previously deposited films) are removed first so that potential contaminants do not affect the optical spectrum generated by the spectrometer (102) and cause false positive leak detection.

[0025] In some embodiments that can be combined with other embodiments, the leak detection operation may be performed as part of (or thereafter) a film deposition operation on a substrate (not shown) located in the process chamber (12). For example, in some embodiments that can be combined with other embodiments, the leak detection operation may be performed as part of the final operation of the film deposition process on a substrate (not shown) located in the process chamber (12) during the operations.

[0026] The process chamber (12) may be controlled at least partially by a processor-based system controller, such as a controller (30). Specifically, the controller (30) may be configured to perform or control both semiconductor manufacturing operations (e.g., film deposition or etching) and leak detection operations from the process chamber (12). For example, the controller (30) may be configured to control the flow of various plasmas (or other gases) within the process chamber (12). The controller (30) may also be configured to control all aspects of electric field generation within the process chamber (12) by modulating and controlling the application of voltages to one or more of the internal components. The controller (30) may further operate to control various stages of the substrate process sequence within the process chamber (12).

[0027] Additionally, the controller (30) may be configured to control one or more aspects of a leak detection operation through the leak detection assembly (100), such as controlling one or more aspects of a spectrometer (102), a light source (106), a lens (108), etc. For example, in some embodiments that may be combined with other embodiments, the controller (30) may be configured to analyze the light spectrum generated by the spectrometer (102) to determine the presence or indication of a leak in the process chamber (12).

[0028] The controller (30) includes a programmable central processing unit (CPU) (32) capable of operating with memory (34) and support circuits (36) coupled to various components of the process chamber (12) to facilitate control of substrate processing, an input control unit (not shown), and a display unit (not shown), such as power supplies, clocks, cache, input / output (I / O) circuits, etc. The controller (30) also includes hardware for monitoring substrate processing through sensors of the process chamber (12), including sensors that monitor flow, RF power, voltage potential, etc. Sensors that measure system parameters (e.g., substrate temperature, chamber atmosphere pressure, etc.) may also provide information to the controller (30).

[0029] To facilitate the control of the process chamber (12) and the associated plasma and electric field formation processes, the CPU (32) may be any type of general-purpose computer processor, such as a programmable logic controller (PLC), that can be used in an industrial setting to control various chambers and sub-processors. Memory (34) is coupled to the CPU (32), and the memory (34) may be one or more of non-transient and readily available memory, such as random access memory (RAM), read-only memory (ROM), a floppy disk drive, a hard disk, or any other form of local or remote digital storage. Support circuits (36) are coupled to the CPU (32) to support the processor in a conventional manner. Plasma and electric field formation and other processes are generally stored in the memory (34), typically as software routines. Software routines may also be stored and / or executed by a second CPU (not shown) located remotely from the hardware controlled by the CPU (32).

[0030] Memory (34) may be in the form of a computer-readable storage medium containing instructions that facilitate the operation of the process chamber (12) when executed by the CPU (32). The instructions of memory (34) may be in the form of a program product, such as a program that implements the method of the present disclosure. The program code may follow any one of a number of different programming languages. In one example, the present disclosure may be implemented as a program product stored in a computer-readable storage medium for use in a computer system. The program(s) of the program product define the functions of the embodiments (including the methods described herein).

[0031] In certain embodiments, the program(s) implement machine learning capabilities. Various data features include process parameters such as processing time, temperature, pressure, voltage, polarity, power, gas species, precursor flow rate, etc. Relationships between features are identified and defined to enable analysis by machine learning algorithms to adapt the data and the processes performed by the processing chamber (12). Machine learning algorithms may utilize supervised or unsupervised learning techniques. Examples of machine learning algorithms implemented by the program include, but are not limited to, linear regression, logistic regression, decision trees, state vector machines, neural networks, naive Bayes, k-nearest neighbors, K-Means, random forest, dimensionality reduction algorithms, and gradient boosting algorithms. In one example, a machine learning algorithm is used to modulate RF power and precursor gas flow to form a plasma, and then to facilitate the maintenance of a low-ion density plasma containing radicals at a higher concentration than ions. The formation of charged species in this manner can be refined and improved by identifying the constituents of the charged species cloud (e.g., radicals and / or ions) and modifying chamber process or device characteristics to form and maintain a charged species cloud that exhibits desirable characteristics as an electric field coupling medium of the process chamber (12).

[0032] An exemplary computer-readable storage medium comprises, but is not limited to: (i) a non-writable storage medium in which information is permanently stored (e.g., read-only memory devices in a computer, such as CD-ROM disks readable by a CD-ROM drive, flash memory, ROM chips, or any type of solid-state non-volatile semiconductor memory); and (ii) a writable storage medium in which changeable information is stored (e.g., floppy disks in a diskette drive or a hard disk drive or any type of solid-state random access semiconductor memory). If such a computer-readable storage medium has computer-readable instructions directing the functions of the methods described herein, such a computer-readable storage medium is an embodiment of the present disclosure.

[0033] FIG. 2 schematically illustrates a lens (108) coupled to a side wall (13) of a process chamber (12) according to some embodiments. For example, in some embodiments that may be combined with other embodiments, the lens (108) may be located in a lens box (120) supported on and connected to the side wall (13) in close proximity to the viewport (110) (Fig. 1) of the process chamber (12).

[0034] In particular, in some embodiments that can be combined with other embodiments, the lens box (108) may be mounted on a bracket (111) and, eventually, connected to a side wall (13) and aligned with a viewport (110). The bracket (111) may include a body (112) that is inserted into a suitable aperture (11) defined through the corresponding side wall (13) of the process chamber (12) (Fig. 1). The body (112) may include a first or inner end (112a), a second or outer end (112b) opposite the inner end (112a), and a through passage (113) extending between the ends (112a, 112b). The inner end (112a) may be inserted into the aperture (11), and the outer end (112b) may be located in the surrounding environment (19). The viewport (110) may be positioned within the aperture (11) such that the inner end (112a) contacts (or is adjacent to) the viewport (110) within the aperture (11), and the viewport (110) is exposed to the outer end (112b) through a through passage (113).

[0035] The viewport (110) may include a transparent (or translucent) member or structure that allows light to pass through. For example, in some embodiments that may be combined with other embodiments, the viewport (110) may include a multilayer structure comprising a first or inner layer (117) and a second or outer layer (115). The layers (115, 117) may be bonded, joined, or otherwise connected to each other. The inner layer (117) may be exposed to a processing volume (17) defined in the process chamber (12) (Fig. 1), and the outer layer (115) may be exposed to an ambient environment (19) outside the process chamber (12) (Fig. 1). In some embodiments that may be combined with other embodiments, the inner layer (117) may include sapphire, and the outer layer (115) may include quartz. Additionally, in some embodiments that may be combined with other embodiments, the viewport (110) may include an ultraviolet (UV) filter (119) on the outer layer (115) (however, the UV filter (119) may be located on other surfaces, e.g., on the inner layer (117), between the layers (115, 117), etc.). As the name implies, the UV filter (119) may be configured to filter UV light (e.g., light having a wavelength of about 400 nanometers (nm) or less) so that light of such wavelength is prevented (or at least limited) from being collected by the lens (108) during operations.

[0036] In some embodiments that can be combined with other embodiments, the viewport (110) may be installed in the aperture (11) of the sidewall (13) separately and independently from the bracket (111). Specifically, the viewport (110) may be installed within the aperture (11) to seal the aperture (11) and prevent (or at least restrict) fluid flow between the processing volume (17) and the surrounding environment (19) through the aperture (11) during operations. Conversely, the bracket (111) may be mounted independently on the sidewall (13) and supported on the sidewall. Consequently, without being limited to this theory or any other theory, stresses and forces applied to the bracket (111) (e.g., from the lens box (108) and components located inside) may not be transmitted to the viewport (110) during operations (or may not be transmitted substantially). Additionally, the bracket (111) can be easily removed and replaced without obstructing the viewport (110).

[0037] The lens (108) can be inserted at least partially into the through passage (113) from the outer end (112b). As a result, the lens (108) can be exposed to light transmitted through the viewport (110) via the through passage (113).

[0038] The lens box (120) may be mounted on the outer end (112b) of the body (112) of the bracket (111) so that the lens box (120) cantileveres from the body (112) and ultimately from the side wall (13) (e.g., via bolts, screws, welding, etc.). The lens box (120) may at least partially define an internal cavity (122) (or "cavity (122)") to at least partially accommodate a lens (108) inside. An optical fiber cable (104) may extend into the cavity (122) of the lens box (120) to be coupled to the lens (108).

[0039] The lens (108) can be coupled to and supported on a universal joint assembly (130) located within the cavity (122). Specifically, the lens (108) can be directly supported on a base (123) that is additionally supported on the universal joint assembly (130). The universal joint assembly (130) can, ultimately, be supported on a surface (e.g., a bottom surface) of the lens box (120) within the cavity (122).

[0040] The lens box (120) may include an opening (121) that can be aligned with the through passage (113) of the body (112) of the bracket (111). Accordingly, the lens (108) may be extended or inserted at least partially through the opening (121) and into the through passage (113) to collect light emitted through the viewport (110) as previously described. Accordingly, the lens (108) may be offset or spaced apart from the side wall (13) of the process chamber (12) and also from the viewport (110), which may reach an elevated temperature during operations.

[0041] Additionally, the lens box (120) and bracket (111) may function to shield (or at least substantially shield) the lens (108) from light sources that are not emitted through the viewport (110) (e.g., light emitted from the surrounding environment (19)). Without being limited to this theory or any other theory, by substantially covering the lens (108) (e.g., with the lens box (120) and bracket (111)), signal noise caused by other light sources (i.e., light sources not originating from the process chamber (12)) may be reduced or eliminated.

[0042] As illustrated in FIG. 2, the universal joint assembly (130) may include a ball joint. Specifically, the universal joint assembly (130) may include a ball (132) (or sphere) pivotably mounted in a housing (134) so ​​that the ball (132) can pivot omnidirectionally about its center (135). A base (123) may be mounted on the ball (132) so that as the ball (132) pivots about the center (135) within the housing (134), the base (123) (and lens (108)) also pivots about the center (135). In some embodiments that may be combined with other embodiments, the orientation of the ball (132), base (123), and lens (108) may be locked or held by a suitable locking assembly (not shown) of the universal joint assembly (130). For example, a set screw (not shown) can be screwed forward to engage with the ball (132) to hold the ball (132) in a specific orientation of the ball (132) if desired.

[0043] To provide a user with a manual adjustment interface for the lens (108) during operations, an adjustment projection (109) may extend through another opening (107) in the lens box (120). For example, the adjustment projection (109) may include an elongated member having a distal end that is connected to the lens (108) at a distal end and protrudes out of the cavity (122) through the opening (107) for operation by the user. In some embodiments that may be combined with other embodiments, one or more actuators (e.g., linear actuators, electric motors, hydraulic or pneumatic cylinders, etc.) configured to adjust the position of the lens (108) relative to the viewport (110) during operations may be coupled to the lens (108) and / or the universal joint assembly (130). In some of these embodiments, one or more actuators (not shown) may be at least partially controlled by a controller (30) (Fig. 1) or some other controller or control infrastructure.

[0044] Pivoting the ball (132) within the housing (134) of the universal joint assembly (130) may allow the position, alignment, and / or focus of the lens (108) to be adjusted relative to the viewport (110). Specifically, pivoting the ball (132) of the universal joint assembly (130) may allow the alignment of the lens (108) relative to the viewport (110) to be adjusted to optimize the amount of light collected by the lens (108) during the leak detection operation. Without being limited to this theory or any other theory, the collection of a stronger light signal by the lens (108) may help ensure that the subsequent light spectrum (such as that generated by the spectrometer (102) as previously described) provides an accurate representation of the environment within the process chamber (12) (Fig. 1) to accurately identify internal leaks.

[0045] Now, referring to FIG. 3, a method (200) for detecting a leak in a process chamber for an electronic device according to some embodiments is illustrated. In some embodiments that may be combined with other embodiments, the method (200) may be performed using embodiments of the process chamber (12) and leak detection assembly (100) of FIG. 1 and 2 or described herein. Accordingly, FIG. 1 and 2 are continuously referenced when describing the features of the method (200). However, it should be understood that embodiments of the method (200) may be performed using systems different from those previously described herein in at least some aspects. Accordingly, continuous reference to FIG. 1 and 2 should not be interpreted as limiting other embodiments of the method (200).

[0046] Initially, the method (200) includes the step of flowing plasma through a process chamber of an electronic device in block (202). For example, as previously described for the process chamber (12) of FIG. 1, the plasma may be generated in the RPS (20) and then flowed into the process chamber (12). In some embodiments that may be combined with other embodiments, the plasma may be generated within the process chamber (12) itself. In some embodiments that may be combined with other embodiments, the plasma may be derived from a precursor gas, such as H2, Ar, etc.

[0047] For example, in some embodiments that may be combined with other embodiments, the plasma generated in the process chamber (12) as part of the leak detection operation may be derived from a single gas component or element (e.g., H2 or Ar as previously described). Deriving the plasma from a single component or element, without being limited to this theory or any other theory, may simplify the optical spectrum generated by the spectrometer (102) so that contaminants (e.g., contaminants from the external surrounding environment (19)) can be more easily detected (e.g., by an employee, controller (30), etc.).

[0048] In some embodiments that may be combined with other embodiments, one or more conditions or factors of the process chamber (12) (e.g., pressure, gap, radio frequency conditions, etc.) may be adjusted to ensure stable plasma conditions within the process chamber (12) during leak detection operations. For example, in some embodiments that may be combined with other embodiments, the process chamber (12) (particularly, the process volume (17)) may be maintained at a temperature in the range of about 20°C to about 450°C. Additionally, it should be understood that the leak detection methods and systems described herein may be used to detect leaks in process chambers (e.g., process chamber (12)) having a wide range of internal volumes, such as in the range of about 1000 liters (L) to about 7000 L. Accordingly, in various embodiments, one or more process conditions may be adjusted to ensure stable plasma during leak detection operations based at least partially on the internal volume of the process chamber.

[0049] Additionally, the method (200) includes the step of generating a light spectrum for light emitted from inside the process chamber in block (204). For example, as previously described for the process chamber (12) and leak detection assembly (100) of FIGS. 1 and 2, a lens (108) can collect (and potentially amplify) light emitted from inside the process chamber (12) and transmit the collected light to a spectrometer (102). The spectrometer (102) can then generate a light spectrum for the collected light, which may include characteristic peaks corresponding to the configuration of the environment inside the process chamber (12).

[0050] Additionally, the method (200) includes the step of detecting a leak in the process chamber based at least partially on the optical spectrum in block (206). Specifically, as previously described, the optical spectrum may include characteristic peaks corresponding to the configuration of the environment within the process chamber (12) (e.g., the configuration of the processing volume (17)). If a leak occurs in the process chamber, weaker or smaller peaks associated with the elements constituting the plasma (e.g., due to the escape of plasma from the process chamber (12)) and / or additional peaks associated with contaminants (e.g., contaminants moving into the process chamber (12) from the external surrounding environment (19) through the leak(s)) will be observed. Thus, if such anomalies are detected in the optical spectrum, it can be determined that the process chamber (12) has caused a leak. In some embodiments that may be combined with other embodiments, the leak detection in block (206) may be performed at least partially by a controller such as the controller (30) shown in FIG. 1.

[0051] In some embodiments that may be combined with other embodiments, the controller (30) may include comparing the optical spectrum with a reference optical spectrum to determine the presence of a leak in the process chamber as part of the leak detection of the block (206). For example, a reference optical spectrum may be generated when it is confirmed that there is no leak in the process chamber (e.g., during the initial commissioning of the process chamber, as part of a laboratory test, or at some other time).

[0052] In some embodiments that may be combined with other embodiments, the controller (30) may detect a leak in the process chamber by analyzing one or more characteristics or parameters of the optical spectrum (e.g., alone as previously described, or with respect to a reference value or threshold value) as part of the leak detection of the block (206). For example, in some embodiments that may be combined with other embodiments, one or more statistical measurements or parameters, such as wavelength average, standard deviation (including a single standard deviation (σ), ±3 standard deviations (3σ)), summation, or other values ​​from the optical spectrum generated by the spectrometer (102) may be considered (e.g., by the controller (30), staff) to determine the presence of a leak.

[0053] In some embodiments that can be combined with other embodiments, the controller (30) may define a characteristic spectrum (e.g., a range of wavelengths of light) to be analyzed as part of leak detection in block (206). Specifically, the controller (30) may select a characteristic spectrum that can provide a minimum amount of signal noise that can reduce the accuracy of leak detection during operations. In some embodiments that can be combined with other embodiments, the characteristic spectrum may be received manually by the controller (30) (e.g., through computer-readable instructions stored in memory (34) and executed by the CPU (32)). For example, the characteristic spectrum may be defined based on previous tests or evaluations (e.g., laboratory tests, calibration processes, etc.) and may be used by the controller (30) during leak detection operations. Conversely, in some embodiments that can be combined with other embodiments, the controller (30) may automatically select a characteristic spectrum based on one or more factors, such as noise in the incident light signal from the lens (108). Specifically, the controller (30) can define a characteristic spectrum to keep one or more parameters associated with signal noise below a threshold.

[0054] In some embodiments that can be combined with other embodiments, the detection of a leak through the method (200) may provide a high level of sensitivity. For example, the detection of a leak through the method (200) (e.g., through the use of the leak detection assembly (100) of FIGS. 1 and 2) may detect leaks within a process chamber having a flow rate as small as about 1 millitor / min (mT / min). In some embodiments that can be combined with other embodiments, the detection sensitivity (or tolerance) may be adjusted (e.g., by the user) to avoid or reduce false positive leak detections.

[0055] In some embodiments that may be combined with other embodiments, if a leak is detected through the block (206), the method (200) may further include the step of stopping chamber operations based at least partially on the detected leak. For example, if the controller (30) detects a leak through the block (206), the controller (30) may automatically stop or prevent further operation or use of the process chamber (12) to prevent damage to the substrate or defects in the substrate and / or harm to personnel located near the process chamber during operations. The controller (30) may create an "event log" of the detected leak (which may include measurement details of the leak in some embodiments) in an appropriate database and may provide the event log (or indication thereof) to a user interface to warn personnel about the detected leak.

[0056] In some embodiments that can be combined with other embodiments, the results of multiple leak test operations may be stored in a database (e.g., memory (34) of the controller (30) in FIG. 1) and may be accessed and analyzed to determine long-term changes or other trends. Thus, in some embodiments that can be combined with other embodiments, embodiments of the leak detection assembly (100) may be used to detect longer-term deterioration of the seal of the process chamber (12), so that preventive maintenance can be performed in a timely manner to prevent damage (e.g., contamination) to the substrate undergoing processing operations inside.

[0057] As previously described, the controller (30) may perform other operations or functions associated with the process chamber (12) beyond leak detection. For example, the controller (30) may control one or more functions associated with normal semiconductor processing operations (e.g., film deposition, etching, etc.) using the process chamber (12). Thus, the leak detection assembly (100) may not only be physically integrated with the process chamber (12), but may also be integrated with normal control systems (or schemes) associated with the process chamber (12). Consequently, leak detection may be a more frequently performed routine that is part of the normal operations of the process chamber (12).

[0058] Since the light spectrum generated by the spectrometer (102) is a characteristic of the environment (e.g., processing volume (17)) within the process chamber (12), additional analysis may be performed based on the light spectrum during operations (e.g., by an employee, controller (30), etc.). For example, in some embodiments that may be combined with other embodiments, the leak detection assembly (100) may be used to determine whether there are other contaminants (e.g., chemical and / or metal contaminants) present in the process chamber (12), regardless of whether these contaminants came into existence due to a leak.

[0059] As described above and repeated below, the present disclosure includes, without limitation, the following exemplary embodiments.

[0060] Clause 1: An electronic device processing system comprises: a process chamber; a leak detection assembly coupled to the process chamber — the leak detection assembly comprises a spectrometer configured to receive light collected from inside the process chamber and generate a light spectrum —; and a controller coupled to the leak detection assembly configured to detect a leak in the process chamber based at least partially on the light spectrum generated by the spectrometer.

[0061] Clause 2: In an electronic device processing system of any of the clauses, the process chamber includes a viewport, and the leak detection assembly further includes a lens coupled to a spectrometer and located outside the process chamber, thus the lens is configured to collect light from inside the process chamber through the viewport.

[0062] Clause 3: In any of the provisions of an electronic device processing system, a viewport is fixed within an aperture formed in the side wall of a process chamber, and the electronic device processing system further comprises: a bracket including a body having a first end, a second end, and a through passage extending between the first end and the second end, wherein the first end of the body is at least partially received in the aperture, and a lens is at least partially inserted from the second end of the body into the through passage to expose the lens to the viewport.

[0063] Clause 4: In an electronic device processing system of any of the clauses, the leak detection assembly further comprises a lens box mounted on a second end of the body of a bracket, the lens box defines a cavity inside, and a lens is also located at least partially in the cavity.

[0064] Clause 5: In any of the electronic device processing systems of the clauses, the lens box is cantilevered from the body of the bracket.

[0065] Clause 6: In an electronic device processing system of any of the clauses, the leak detection assembly further comprises a universal joint assembly located in the cavity of a lens box, and the lens is supported by the universal joint assembly.

[0066] Clause 7: In an electronic device processing system of any of the clauses, the universal joint assembly comprises a ball joint comprising a ball pivotably mounted within a housing, the ball having a center and configured to pivot omnidirectionally about the center within the housing, and a lens coupled to the ball.

[0067] Clause 8: An electronic device processing system of any of the clauses further comprises a remote plasma source within the process chamber.

[0068] Clause 9: A method for detecting leakage in a process chamber of an electronic device processing system, the method comprises: (a) generating a light spectrum for light emitted from inside the process chamber; and (b) detecting leakage in the process chamber based at least partially on the light spectrum.

[0069] Clause 10: The method of any of the clauses further comprises: (c) the step of flowing plasma through a process chamber — the light emitted from inside the process chamber is the light emitted from the plasma flowing in the process chamber —.

[0070] Clause 11: In the method of any of the clauses, (b) further includes the step of comparing the optical spectrum with a reference optical spectrum.

[0071] Clause 12: In the method of any of the clauses, (b) further includes the step of detecting an element in the process chamber from an external environment based at least partially on a light spectrum.

[0072] Clause 13: The method of any of the clauses further comprises: (d) the step of collecting light emitted from inside the process chamber through a viewport located on the process chamber using a lens.

[0073] Clause 14: The method of any of the clauses comprises: (e) further comprising the step of transmitting the light collected in (d) to a spectrometer, and (a) comprising the step of generating a light spectrum using the spectrometer.

[0074] Clause 15: In the method of any of the clauses, (b) further includes the step of detecting a leak using a controller coupled to a spectrometer.

[0075] Clause 16: The method of any of the clauses includes: (f) a step of adjusting the position of the lens within the lens box coupled to the process chamber.

[0076] Clause 17: In the method of any of the clauses, (f) further includes the step of operating a ball joint located in a lens box.

[0077] Clause 18: A leak detection assembly for a process chamber of an electronic device processing system, wherein the leak detection assembly comprises: a lens configured to collect light emitted from inside the process chamber; a spectrometer configured to be coupled to the lens and configured to generate a light spectrum based at least partially on the light; and a controller configured to be coupled to the spectrometer and configured to detect a leak in the process chamber based at least partially on the light spectrum.

[0078] Clause 19: A leak detection assembly of any of the clauses further comprises a lens box configured to be coupled to a side wall of a process chamber, and the lens box comprises a cavity configured to accommodate at least partially a lens inside.

[0079] Clause 20: A leak detection assembly of any of the clauses further comprises a universal joint assembly configured to be mounted in a lens box, and the universal joint assembly is configured to support a lens such that the position or alignment of the lens is adjustable with respect to a viewport coupled to a sidewall through the universal joint assembly.

[0080] Clause 21: An electronic device processing system comprises: a process chamber including a sidewall and a viewport positioned along the sidewall; a leak detection assembly coupled to the process chamber ― the leak detection assembly comprises: a lens box coupled to the sidewall; a lens positioned at least partially within the lens box such that the lens is oriented toward the viewport; and a spectrometer coupled to the lens and configured to generate a light spectrum based on light collected by the lens through the viewport ―; and a controller coupled to the spectrometer, configured to detect a leak in the process chamber based at least partially on the light spectrum generated by the spectrometer.

[0081] Clause 22: In any of the electronic device processing systems of the clauses, the viewport is fixed within an aperture formed in the side wall of the process chamber.

[0082] Clause 23: An electronic device processing system of any of the clauses further comprises: a bracket including a body having a first end, a second end, and a through passage extending between the first end and the second end, wherein the first end of the body is at least partially received in an aperture, a lens is at least partially inserted from the second end of the body into the through passage to expose the lens to a viewport, and a lens box is mounted on the second end of the body.

[0083] Clause 24: In an electronic device processing system of any of the clauses, the leak detection assembly further comprises a universal joint assembly located in a lens box, and the lens is supported by the universal joint assembly.

[0084] Clause 25: In any of the electronic device processing systems of the clauses, the universal joint assembly includes a ball joint.

[0085] Clause 26: In an electronic device processing system of any of the clauses, a ball joint comprises a ball pivotably mounted within a housing, the ball has a center and is configured to pivot omnidirectionally about the center within the housing, and a lens is coupled to the ball.

[0086] Clause 27: In any of the electronic device processing systems of the clauses, the lens box is cantilevered from the body of the bracket.

[0087] Clause 28: An electronic device processing system of any of the clauses further includes a remote plasma source within the process chamber.

[0088] Clause 29: A method for detecting leakage in a process chamber of an electronic device processing system, the method comprises: (a) collecting light emitted from inside the process chamber through a viewport located along the side wall of the process chamber using a lens — the lens is located in a lens box coupled to the side wall —; (b) generating a light spectrum for the light collected by the lens; and (c) detecting leakage in the process chamber based at least partially on the light spectrum.

[0089] Clause 30: The method of any of the clauses further comprises: (d) the step of inserting at least partially a lens into a through passage of a bracket coupled to a side wall around a viewport — the lens box is mounted to the bracket such that the lens box cantileveres from the bracket —.

[0090] Clause 31: The method of any of the clauses includes: (e) a step of adjusting the position or orientation of the lens using a universal joint assembly located in the lens box.

[0091] Clause 32: In the method of any of the clauses, (e) includes the step of pivoting a ball of a universal joint assembly within a housing.

[0092] Clause 33: The method of any of the clauses further comprises: (f) the step of flowing plasma through a process chamber — the light emitted from inside the process chamber is the light emitted from the plasma flowing in the process chamber —.

[0093] Clause 34: In the method of any of the clauses, (c) further includes the step of comparing the optical spectrum with a reference optical spectrum.

[0094] Clause 35: In the method of any of the clauses, (b) further includes the step of detecting an element in the process chamber from an external environment based at least partially on a light spectrum.

[0095] Clause 36: The method of any of the clauses comprises: (g) further comprising the step of transmitting the light collected in (a) to a spectrometer, and (b) comprising the step of generating a light spectrum using the spectrometer.

[0096] Clause 37: In the method of any of the clauses, (c) further includes the step of detecting a leak using a controller coupled to a spectrometer.

[0097] Clause 38: A leak detection assembly for a process chamber of an electronic device processing system, wherein the leak detection assembly comprises: a lens box configured to be coupled to the wall of the process chamber; a lens located in the lens box ― the lens is configured to collect light emitted from inside the process chamber ―; a spectrometer configured to be coupled to the lens and configured to generate a light spectrum at least partially based on the light; and a controller configured to be coupled to the spectrometer and configured to detect a leak in the process chamber at least partially based on the light spectrum.

[0098] Clause 39: A leak detection assembly of any of the clauses further comprises a universal joint assembly mounted in a lens box, and the universal joint assembly is configured to support the lens so that the position or alignment of the lens is adjustable with respect to a viewport coupled to a wall through the universal joint assembly.

[0099] Clause 40: In a leak detection assembly of any of the clauses, the universal joint assembly comprises a ball joint comprising a ball pivotably mounted within a housing, the ball having a center and configured to pivot omnidirectionally about the center within the housing, and a lens coupled to the ball.

[0100] The embodiments disclosed herein include systems and methods for performing leak detection operations within an electronic device process chamber that can be implemented within the normal operation cycle of the process chamber. In some embodiments that may be combined with other embodiments, the systems and methods for leak detection may allow in-situ leak detection using components that may remain installed on the process chamber during normal operations and over a relatively short period (e.g., less than 1 minute in some embodiments). Thus, through the use of the embodiments disclosed herein, leak detection can be performed more frequently without sacrificing manufacturing throughput.

[0101] The foregoing discussion relates to various embodiments. However, a person skilled in the art will understand that the examples disclosed herein have a wide range of applications, that the discussion of any embodiment is intended merely as an example of such embodiment, and that it is not intended to imply that the scope of the disclosure, including the claims, is limited to such embodiment.

[0102] The drawings are not necessarily to scale. Certain features and components of the present invention may be depicted at an exaggerated scale or in a somewhat schematic form, and some details of prior elements may not be depicted for the sake of clarity and conciseness.

[0103] In the preceding discussion and in the claims, the terms “including” and “comprising” are used in an open-ended fashion and should therefore be interpreted to mean “including, but not limited to.” Additionally, the terms “couple” or “couples” are intended to mean an indirect or direct connection. Thus, when a first device is coupled to a second device, such connection may be made through a direct connection between the two devices, or through an indirect connection established through other devices, components, nodes, and connections. Furthermore, as used herein, the terms “axial” and “axially” generally mean along or parallel to a given axis (e.g., the center axis of a body or port), while the terms “radially” and “radially” generally mean perpendicular to a given axis. For example, an axial distance refers to a distance measured along or parallel to an axis, and a radial distance refers to a distance measured perpendicular to an axis. Additionally, as used herein (including in the claims), words such as “about,” “generally,” “substantially,” and “approximately,” when used to refer to a mentioned value, mean within a range of ±10% of the mentioned value.

[0104] Although exemplary embodiments have been illustrated and described, modifications may be made by a person skilled in the art without departing from the scope or teachings of this invention. The embodiments described herein are illustrative only and are not limiting. Many variations and modifications of the systems, devices, and processes described herein are possible and are within the scope of this disclosure. Accordingly, the scope of protection is not limited to the embodiments described herein, but is limited only by the subsequent claims, and the scope will include all equivalents of the subject matter claimed in the claims. Unless otherwise expressly stated, the operations in the method claims may be performed in any order. Referring to identifiers such as (a), (b), (c) or (1), (2), (3) prior to the operations in the method claims is not intended to specify the operations in a particular order, nor is it intended to specify them, but rather is used to simplify subsequent reference to such operations.

Claims

Claim 1 An electronic device processing system comprising: a process chamber including a sidewall and a viewport positioned along said sidewall; a leak detection assembly coupled to said process chamber ― said leak detection assembly comprises: a lens box coupled to said sidewall; a lens positioned at least partially within said lens box such that the lens is oriented toward said viewport; and a spectrometer coupled to said lens and configured to generate a light spectrum based on light collected by said lens through said viewport ―; and a controller coupled to said spectrometer configured to detect a leak in said process chamber based at least partially on said light spectrum generated by said spectrometer. Claim 2 An electronic device processing system according to claim 1, wherein the viewport is fixed within an aperture formed on the side wall of the process chamber. Claim 3 An electronic device processing system according to claim 2, further comprising a bracket including a body having a first end, a second end, and a through passage extending between the first end and the second end — the first end of the body is at least partially received in the aperture, and the lens is at least partially inserted from the second end of the body into the through passage to expose the lens to the viewport — and the lens box is mounted on the second end of the body. Claim 4 In paragraph 3, the leak detection assembly further comprises a universal joint assembly located in the lens box, and the lens is supported by the universal joint assembly, an electronic device processing system. Claim 5 In paragraph 4, the above universal joint assembly comprises a ball joint, an electronic device processing system. Claim 6 An electronic device processing system according to claim 5, wherein the ball joint comprises a ball pivotably mounted within a housing, the ball has a center and is configured to pivot omnidirectionally about the center within the housing, and the lens is coupled to the ball. Claim 7 In paragraph 3, the lens box is a cantilevered electronic device processing system from the body of the bracket. Claim 8 An electronic device processing system according to claim 1, further comprising a remote plasma source within the process chamber. Claim 9 A method for detecting leakage in a process chamber of an electronic device processing system, the method comprising: (a) collecting light emitted from inside the process chamber through a viewport located along the side wall of the process chamber using a lens — said lens is located in a lens box coupled to said side wall —; (b) generating a light spectrum for the light collected by said lens; and (c) detecting leakage in said process chamber based at least partially on said light spectrum. Claim 10 A method according to claim 9, further comprising: (d) the step of at least partially inserting the lens into a through passage of a bracket coupled to the side wall around the viewport — the lens box is mounted on the bracket such that the lens box cantileveres from the bracket —. Claim 11 A method according to claim 10, further comprising the step of (e) adjusting the position or orientation of the lens using a universal joint assembly located in the lens box. Claim 12 In claim 11, the method comprises the step of (e) pivoting the ball of the universal joint assembly within the housing. Claim 13 A method according to claim 9, further comprising: (f) the step of flowing plasma through the process chamber — the light emitted from inside the process chamber is the light emitted from the plasma flowing in the process chamber. Claim 14 In paragraph 13, the above (c) further comprises the step of comparing the light spectrum with a reference light spectrum. Claim 15 In claim 13, the method further comprises the step of (b) detecting an element within the process chamber from an external environment based at least partially on the light spectrum. Claim 16 A method according to claim 9, further comprising the step of (g) transmitting the light collected in (a) to a spectrometer, wherein (b) comprises the step of generating the light spectrum by using the spectrometer. Claim 17 In claim 16, the method further comprises the step of detecting the leakage using a controller coupled to the spectrometer (c). Claim 18 A leak detection assembly for a process chamber of an electronic device processing system, wherein the leak detection assembly comprises: a lens box configured to be coupled to a wall of the process chamber; a lens located in the lens box — said lens configured to collect light emitted from inside the process chamber —; a spectrometer configured to be coupled to the lens and configured to generate a light spectrum at least partially based on said light; and a controller configured to be coupled to the spectrometer and configured to detect a leak in the process chamber at least partially based on said light spectrum. Claim 19 A leak detection assembly according to claim 18, further comprising a universal joint assembly mounted on the lens box, wherein the universal joint assembly is configured to support the lens such that the position or alignment of the lens is adjustable with respect to a viewport coupled to the wall through the universal joint assembly. Claim 20 In claim 19, the universal joint assembly comprises a ball joint including a ball pivotably mounted within a housing, said ball having a center configured to pivot omnidirectionally about the center within the housing, and said lens coupled to said ball, a leak detection assembly.

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