Electronic device
Patent Information
- Application Number
- KR1020250061146
- Authority / Receiving Office
- KR · KR
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-02-27
- Filing Date
- 2025-05-12
- Publication Date
- 2026-09-04
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Figure P1020250061146_ABST
Abstract
Description
Technology Field
[0001] The present invention relates to an electronic device, and more specifically, to an electronic device with improved reliability. Background Technology
[0002] Various types of electronic devices are used to provide image information, and the development of self-luminous electronic devices using organic light-emitting materials or quantum dot light-emitting materials is underway. Self-luminous electronic devices include light-emitting elements, and since these elements are vulnerable to external environments such as oxygen and moisture, various technologies are required to seal them. Among these, development is progressing on encapsulation layers that block penetration paths of air and moisture by placing the encapsulation layer over the light-emitting element; the encapsulation layer may include an inorganic film containing inorganic materials and an organic film containing organic materials. The problem to be solved
[0003] The objective of the present invention is to provide an electronic device with improved reliability due to low moisture permeability. means of solving the problem
[0004] An electronic device according to one embodiment of the present invention comprises an electronic module and a display module comprising a hole region including a hole defined by overlapping with the electronic module and a display region surrounding the hole region, wherein the display module comprises a base layer, a circuit layer disposed on the base layer, a display element layer disposed on the circuit layer and including a light-emitting element, a first inorganic encapsulation layer disposed on the display element layer, and an organic encapsulation layer disposed on the first inorganic encapsulation layer, wherein the first inorganic encapsulation layer comprises a first inorganic layer disposed on the display element layer and having a first refractive index, and a second inorganic layer disposed on the first inorganic layer and having a second refractive index greater than the first refractive index, wherein in a planar manner, the first inorganic layer overlaps with at least a portion of the display region and does not overlap with the hole region.
[0005] Each of the first inorganic layer and the second inorganic layer may include at least one of silicon nitride and silicon oxynitride.
[0006] On the above plane, the second inorganic layer can overlap the hole area and the display area.
[0007] The thickness of the second inorganic layer may be greater than the thickness of the first inorganic layer.
[0008] The first inorganic encapsulation layer is disposed on the second inorganic layer and further comprises a third inorganic layer having a third refractive index, wherein the third refractive index may be smaller than the second refractive index.
[0009] The above third inorganic layer may include silicon oxynitride.
[0010] On the above plane, the third inorganic layer can overlap the hole area and the display area.
[0011] On the above plane, the third inorganic layer may overlap the display area and not overlap the hole area.
[0012] The first inorganic encapsulation layer is disposed on the second inorganic layer and further comprises a fourth inorganic layer containing silicon oxynitride, and the nitrogen content in the fourth inorganic layer may be smaller than the nitrogen content in each of the first and second inorganic layers.
[0013] The above-mentioned fourth inorganic layer may have a fourth refractive index smaller than the above-mentioned second refractive index.
[0014] On a plane, the fourth inorganic layer can overlap the hole area and the display area.
[0015] The first inorganic encapsulation layer is disposed between the first inorganic layer and the second inorganic layer and further comprises a fifth inorganic layer having a fifth refractive index, wherein the fifth inorganic layer comprises silicon nitride, and the fifth refractive index may be greater than the first refractive index and the second refractive index, respectively.
[0016] The first inorganic encapsulation layer includes a first encapsulation portion overlapping the hole area and a second encapsulation portion overlapping the display area, and the thickness of the second encapsulation portion may be greater than the thickness of the first encapsulation portion.
[0017] In the first encapsulation portion, the second inorganic layer may be directly disposed on the display element layer, and in the second encapsulation portion, the first inorganic layer may be directly disposed on the display element layer.
[0018] The thickness of the second inorganic layer overlapping the hole area may be substantially the same as the thickness of the second inorganic layer overlapping the display area.
[0019] The above-mentioned encapsulation layer further comprises a second inorganic encapsulation layer disposed on the organic encapsulation layer, and the second inorganic encapsulation layer may comprise at least one of silicon nitride, silicon oxide, and silicon oxynitride.
[0020] The above encapsulation layer can cover the light-emitting element.
[0021] The light-emitting element may include a first electrode, a second electrode disposed on the first electrode, and a light-emitting layer disposed between the first electrode and the second electrode.
[0022] The light-emitting element may further include a capping layer disposed on the second electrode.
[0023] An electronic device according to one embodiment of the present invention comprises an electronic module and a display module comprising a hole region including a hole defined in overlap with the electronic module and a display region surrounding the hole region. The display module comprises a base layer, a circuit layer disposed on the base layer, a display element layer disposed on the circuit layer and including a light-emitting element, a first inorganic encapsulation layer disposed on the display element layer, and an organic encapsulation layer disposed on the first inorganic encapsulation layer. The first inorganic encapsulation layer comprises a first inorganic layer having a first refractive index and a second inorganic layer having a second refractive index greater than the first refractive index. The first inorganic encapsulation layer comprises a first encapsulation portion that overlaps the hole region and includes the second inorganic layer, and a second encapsulation portion that overlaps the display region and includes the first inorganic layer and the second inorganic layer. In the first encapsulation portion, the second inorganic layer is directly disposed on the display element layer. Effects of the invention
[0024] By not placing a lower inorganic layer with a low refractive index in the hole region including the module hole, a reliably encapsulated layer can be realized. Brief explanation of the drawing
[0025] FIG. 1 is a block diagram of an electronic device according to one embodiment of the present invention. FIG. 2 is a schematic diagram of an electronic device according to one embodiment of the present invention. FIG. 3 is a perspective view of a display device according to one embodiment of the present invention. FIG. 4 is an exploded perspective view of a display device according to one embodiment of the present invention. FIG. 5 is a cross-sectional view of a display module according to one embodiment of the present invention. FIG. 6 is a schematic plan view showing a part of a display module according to one embodiment of the present invention. FIGS. 7 and FIGS. 8 are each cross-sectional views of a part of a display module according to one embodiment of the present invention. FIGS. 9a and FIGS. 9b are each cross-sectional views of a light-emitting element according to an embodiment of the present invention. FIGS. 10a and FIGS. 10b are each enlarged plan views of a portion of a display module according to one embodiment of the present invention. FIG. 11 is an enlarged cross-sectional view of a portion corresponding to a hole area in a cross-section of a display module according to one embodiment of the present invention. FIGS. 12a and FIGS. 12b are each enlarged cross-sectional views of a portion corresponding to the display area of a cross-section of a display module according to one embodiment of the present invention. FIG. 13 is an enlarged cross-sectional view of a portion corresponding to a hole area in a cross-section of a display module according to one embodiment of the present invention. FIGS. 14a and FIGS. 14b are each enlarged cross-sectional views of a portion corresponding to the display area of a cross-section of a display module according to one embodiment of the present invention. Figures 15a and 15b are graphs showing the WAD dispersion by angle, measured according to the viewing angle of the display module. Specific details for implementing the invention
[0026] In this specification, where a component (or region, layer, part, etc.) is described as being "on," "connected," or "combined" with another component, it means that it may be directly placed / connected / combined with the other component, or that a third component may be placed between them.
[0027] Identical reference numerals denote identical components. Additionally, in the drawings, the thicknesses, proportions, and dimensions of components are exaggerated for the effective illustration of the technical content. "And / or" includes all one or more combinations that the associated components may define.
[0028] Terms such as "first," "second," etc., may be used to describe various components, but said components should not be limited by said terms. These terms are used solely for the purpose of distinguishing one component, part, region, layer, or part from another component, part, region, layer, or part. For example, without departing from the scope of the present invention, a first component, a first part, a first region, a first layer, or a first part may be named a second component, a second part, a second region, a second layer, or a second part, and similarly, a second component, a second part, a second region, a second layer, or a second part may be named a first component, a first part, a first region, a first layer, or a first part. A singular expression includes a plural expression unless the context clearly indicates otherwise.
[0029] Additionally, terms such as "below," "lower side," "above," and "upper side" are used to describe the relationships between the components depicted in the drawings. These terms are relative concepts and are described based on the directions indicated in the drawings.
[0030] Terms such as "include" or "have" are intended to specify the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.
[0031] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as generally understood by those skilled in the art to which the present invention pertains. Furthermore, terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an overly ideal or overly formal sense unless explicitly defined herein.
[0032] Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0033] FIG. 1 is a block diagram of an electronic device according to one embodiment. Referring to FIG. 1, an electronic device (ED) according to one embodiment may include a display module (DM), a processor (PR), a memory (MR), and a power module (PM).
[0034] The processor (PR) may include at least one of a central processing unit (CPU), an application processor (AP), a graphic processing unit (GPU), a communication processor (CP), an image signal processor (ISP), and a controller.
[0035] The memory (MR) may store data information necessary for the operation of the processor (PR) or the display module (DM). When the processor (PR) executes an application stored in the memory (MR), an image data signal and / or an input control signal are transmitted to the display module (DM), and the display module (DM) can process the received signal and output image information through a display screen. The display module (DM) may include a display panel that displays images.
[0036] The power module (PM) may include a power supply module, such as a power adapter or battery device, and a power conversion module that converts the power supplied by the power supply module to generate power required for the operation of an electronic device (ED).
[0037] At least one of each component of the electronic device (ED) described above may be included in a display module according to the embodiments described below and in a display device of an embodiment including the same. Additionally, some of the individual modules functionally included in one module may be included in the display device, while others may be provided separately from the display device. For example, the display device may include a display module (DM), and the processor (PR), memory (MR), and power module (PM) may be provided in the form of other devices within the electronic device (ED) that are not the display device.
[0038] FIG. 2 is a schematic diagram of an embodiment of various electronic devices.
[0039] Referring to FIG. 2, various electronic devices including a display module according to one embodiment may include not only electronic devices for displaying images such as a smartphone (ED_1a), a tablet PC (ED_1b), a laptop (ED_1c), a TV (ED_1d), and a desktop monitor (ED_1e), but also wearable electronic devices such as smart glasses (ED_2a), a head-mounted display (ED_2b), and a smart watch (ED_2c), and automotive electronic devices such as a Center Information Display (CID) and a room mirror display (ED_3) placed on the instrument panel, center fascia, and dashboard of a car.
[0040] FIG. 1 is a perspective view of an electronic device according to one embodiment. FIG. 2 is an exploded perspective view of a display device according to one embodiment. In FIG. 1 and others of this specification, a mobile phone is illustrated as an example of an electronic device (ED).
[0041] Referring to FIG. 1, the electronic device (ED) may have a rectangular shape having short sides extended in a first direction (DR1) and long sides extended in a second direction (DR2) on a plane. However, it is not limited thereto, and the electronic device (ED) may have various shapes such as a circle or a polygon.
[0042] The electronic device (ED) can display an image (IM) in a third direction (DR3) through a display surface (IS) parallel to the plane defined by the first direction (DR1) and the second direction (DR2). The third direction (DR3) may be substantially parallel to the normal direction of the display surface (IS). The display surface (IS) of the electronic device (ED) may correspond to the front surface of the electronic device (ED).
[0043] The image (IM) displayed on the electronic device (ED) may include not only dynamic images but also still images. FIG. 3 illustrates a clock window and multiple icons as an example of an image (IM).
[0044] In one embodiment, the front (or top) and back (or bottom) surfaces of each member or unit may be defined based on the direction in which the image (IM) is displayed. The front and back surfaces may be opposed to each other in a third direction (DR3), and the normal direction of each of the front and back surfaces may be substantially parallel to the third direction (DR3). The distance between the front and back surfaces defined along the third direction (DR3) may correspond to the thickness of the member (or unit).
[0045] In this specification, "in a plane" may be defined as a state viewed from a third direction (DR3). In this specification, "in a cross-section" may be defined as a state viewed from a first direction (DR1) or a second direction (DR2). Meanwhile, the directions indicated by the first to third directions (DR1, DR2, DR3) are relative concepts and can be converted to other directions.
[0046] The electronic device (ED) may be flexible. "Flexible" refers to the characteristic of being able to bend, and may include everything from structures that fold completely to structures that can bend at the nanometer level. For example, a flexible electronic device (ED) may be a curved device or a foldable device. Not limited to these, the electronic device (ED) may be rigid.
[0047] FIG. 3 illustrates an electronic device (ED) having a planar display surface (IS) as an example. However, the shape of the display surface (IS) of the electronic device (ED) is not limited to this and may be curved or three-dimensional.
[0048] The display surface (IS) of the electronic device (ED) may include a display portion (AA-DD) and a non-display portion (NAA-DD). The display portion (AA-DD) may be a part within the front of the electronic device (ED) where an image (IM) is displayed, and the user may see the image (IM) through the display portion (AA-DD). Although the present embodiment exemplarily illustrates a display portion (AA-DD) having a rectangular shape on a flat surface, the display portion (AA-DD) may have various shapes depending on the design of the electronic device (ED).
[0049] The non-display portion (NAA-DD) may be a part within the front of the electronic device (ED) where an image (IM) is not displayed. The non-display portion (NAA-DD) may have a specific color and be a part that blocks light. The non-display portion (NAA-DD) may be adjacent to the display portion (AA-DD). For example, the non-display portion (NAA-DD) may be placed on the outside of the display portion (AA-DD) to surround the display portion (AA-DD). However, this is illustrated as an example, and the non-display portion (NAA-DD) may be adjacent to only one side of the display portion (AA-DD) or placed on a side other than the front of the electronic device (ED). Furthermore, the non-display portion (NAA-DD) may be omitted, not limited thereto.
[0050] A display unit (AA-DD) of an electronic device (ED) of one embodiment may include a sensing area (SA-DD). The sensing area (SA-DD) may correspond to an area overlapping with the electronic module (EM) of FIG. 4. The electronic module (EM, FIG. 4) may receive an external input transmitted through the sensing area (SA-DD) or output a signal through the sensing area (SA-DD). FIG. 3 illustrates, by way of example, a single sensing area (SA-DD) placed within the display unit (AA-DD), but is not limited thereto, and multiple sensing areas (SA-DD) may be provided within the display unit (AA-DD).
[0051] An electronic device (ED) of one embodiment can detect external inputs applied from the outside. External inputs may have various forms, such as pressure, temperature, light, etc. provided from the outside. External inputs may include inputs that come into contact with the electronic device (ED) (e.g., contact by a user's hand or pen), as well as inputs applied in close proximity to the electronic device (ED) (e.g., hovering).
[0052] Referring to FIGS. 3 and 4, the electronic device (ED) may include a window (WP) and a housing (HU). The window (WP) and the housing (HU) may be combined to form the exterior of the electronic device (ED) and may provide an internal space capable of accommodating the components of the electronic device (ED). The electronic device (ED) may include a display module (DM), a light control member (ARP), and an electronic module (EM), etc., disposed between the window (WP) and the housing (HU).
[0053] The electronic module (EM) may be placed below the display module (DM). The electronic module (EM) may be placed superimposed on the display module (DM). The electronic module (EM) may be an electronic component that outputs or receives optical signals. For example, the electronic module (EM) may be a camera module that captures external images. Not limited thereto, the electronic module (EM) may be a sensor module such as a proximity sensor or an infrared emitting sensor.
[0054] A display module (DM) may be placed on an electronic module (EM). The display module (DM) may include a display panel (DP, FIG. 5) described later. The display panel (DP, FIG. 5) may generate an image according to an electrical signal. The display panel (DP, FIG. 5) may be a light-emitting display panel, but is not limited thereto.
[0055] The display module (DM) may include an active area (DM-AA) and a peripheral area (DM-NAA) adjacent to the active area (DM-AA). The active area (DM-AA) may be an area that is activated according to an electrical signal. Multiple pixels (PX) may be placed in the active area (DM-AA).
[0056] The peripheral area (DM-NAA) may surround the active area (DM-AA). Driving circuits or driving wiring for driving pixels (PX) placed in the active area (DM-AA), and various signal lines or pads that provide electrical signals to the device may be placed in the peripheral area (DM-NAA).
[0057] The display module (DM) may include a hole area (HA) located within the active area (DM-AA). The hole area (HA) may correspond to the aforementioned sensing area (SA-DD). Meanwhile, in this specification, "area / part corresponds to area / part" means "overlaps with each other" and is not limited to having the same area and / or the same shape. The hole area (HA) may also be referred to as the first area (HA).
[0058] The hole region (HA) may be a region that overlaps with the electronic module (EM). A module hole (HH) penetrating the display module (DM) may be defined in the hole region (HA). The module hole (HH) may overlap with the electronic module (EM). In one embodiment, a part of the electronic module (EM) may be inserted inside the module hole (HH).
[0059] In FIG. 4, a single module hole (HH) having a circular shape is illustrated as an example, but the embodiment is not limited thereto. The number of module holes (HH) may be defined in multiple numbers to correspond to the number of electronic modules (EM) placed below the display module (DM). Additionally, the shape of the module hole (HH) in a planar form may be polygonal or elliptical, and the planar shape of the module hole (HH) may be provided in various forms depending on the shape or arrangement of the electronic modules (EM).
[0060] The electronic device (ED) can receive an external signal required by the electronic module (EM) through the Hall area (HA) or provide a signal output from the electronic module (EM) to the outside. According to the present invention, by providing the Hall area (HA) within the active area (DM-AA), the area of the non-display portion (NAA-DD) for housing the electronic module (EM) can be reduced.
[0061] At least a portion of the hole area (HA) may be surrounded by the display area (AA). The display area (AA) may be referred to as a second area. An active area (DM-AA) of a display module (DM) in one embodiment may include the hole area (HA) and the display area (AA). In one embodiment, the hole area (HA) may be completely surrounded within the display area (AA), but is not limited thereto, and a portion of the hole area (HA) may be surrounded by the display area (AA), and the remaining portion may be in contact with the surrounding area (DM-NAA).
[0062] The electronic device (ED) may include an optical control element (ARP) disposed between a display module (DM) and a window (WP). The optical control element (ARP) may be a reflection reduction layer that reduces external light reflectivity caused by light incident from outside the electronic device (ED). However, the embodiments are not limited thereto, and the optical control element (ARP) may include various configurations of optical control layers for improving the display quality of the electronic device (ED). For example, the optical control element (ARP) of one embodiment may include a polarization layer, a phase delay element, a destructive interference structure, or a plurality of color filters. Meanwhile, the optical control element (ARP) may be omitted in the electronic device (ED) of one embodiment.
[0063] A portion of the light control member (ARP) overlapping the hole region (HA) may have a relatively high light transmittance. For example, the light control member (ARP) may include a transparent portion overlapping the hole region (HA), but is not limited thereto, and the light control member (ARP) may include a hole defined to penetrate the light control member (ARP) overlapping the hole region (HA).
[0064] The window (WP) can be placed on the light control member (ARP). The window (WP) can protect the display module (DM) and the light control member (ARP) placed below the window (WP).
[0065] The window (WP) may include an optically transparent insulating material. For example, the window (WP) may include glass, sapphire, or plastic. The window (WP) may have a single-layer or multi-layer structure. The window (WP) may further include functional layers, such as an anti-fingerprint layer, a phase control layer, and a hard coating layer, disposed on an optically transparent substrate.
[0066] The front surface (FS) of the window (WP) may correspond to the display surface (IS) of the aforementioned electronic device (ED). The front surface (FS) of the window (WP) may include a transparent area (TA) and a bezel area (BZA).
[0067] The transparent area (TA) of the window (WP) may be an optically transparent area. The transparent area (TA) may correspond to the display portion (AA-DD) of the electronic device (ED). The transparent area (TA) may overlap with at least a portion of the active area (DM-AA) of the display module (DM). The window (WP) can transmit an image provided by the display module (DM) through the transparent area (TA), and the user can see the image.
[0068] The transmission area (TA) of the window (WP) may include a sensing area (SA). The sensing area (SA) of the window (WP) may correspond to the sensing area (SA-DD) of the electronic device (ED). The sensing area (SA) of the window (WP) may overlap with the Hall area (HA) and the electronic module (EM). The sensing area (SA) of the window (WP) may have a relatively high light transmittance. Accordingly, the electronic module (EM) can effectively receive external input or output a signal through the sensing area (SA).
[0069] The bezel area (BZA) of the window (WP) may be an area provided by depositing, coating, or printing a material having a predetermined color on a transparent substrate. The bezel area (BZA) may correspond to a non-display area (NAA-DD) of the electronic device (ED). The bezel area (BZA) may overlap with at least a portion of the peripheral area (DM-NAA) of the display module (DM). By covering the peripheral area (DM-NAA) of the display module (DM), the bezel area (BZA) of the window (WP) can prevent a component of the display module (DM) placed in the peripheral area (DM-NAA) from being visible to the outside.
[0070] The housing (HU) may be positioned below the display module (DM). The housing (HU) can protect the components housed within it. The housing (HU) can prevent foreign substances or moisture from penetrating the display module (DM) and the light control member (ARP) from the outside. The housing (HU) may contain a material with relatively high rigidity, and the housing (HU) can absorb shocks applied from the outside. The housing (HU) may be provided in a form in which multiple storage members are combined.
[0071] FIG. 5 is a cross-sectional view of a display module according to one embodiment. FIG. 5 is a schematic diagram showing a cross-section corresponding to the line I-I' of FIG. 4.
[0072] Referring to FIG. 5, a display module (DM) according to one embodiment may include a display panel (DP) and an input sensor (ISL). The display panel (DP) may include a base layer (BS), a circuit layer (D-CL), a display element layer (D-OL), and an encapsulation layer (ECL).
[0073] The base layer (BS) may be a member that provides a base surface on which the circuit layer (D-CL) is disposed. The base layer (BS) may be a rigid substrate or a flexible substrate capable of bending, folding, rolling, etc. The base layer (BS) may be a glass substrate, a metal substrate, a silicon substrate, or a polymer substrate, etc. However, embodiments of the present invention are not limited thereto, and the base layer (BS) may be an inorganic layer, an organic layer, or a composite material layer.
[0074] A circuit layer (D-CL) may be disposed on a base layer (BS). The circuit layer (D-CL) may include an insulating layer, a semiconductor pattern, a conductive pattern, and a signal transmission region. An insulating layer, a semiconductor layer, and a conductive layer are formed on the base layer (BS) by means such as coating or deposition, and subsequently, the insulating layer, the semiconductor layer, and the conductive layer may be selectively patterned through multiple photolithography processes. Afterward, a semiconductor pattern, a conductive pattern, and a signal line included in the circuit layer (D-CL) may be formed.
[0075] A display element layer (D-OL) may be disposed on a circuit layer (D-CL). The display element layer (D-OL) may include a light-emitting element. For example, the display element layer (D-OL) may include an organic light-emitting material, an inorganic light-emitting material, an organic-inorganic light-emitting material, a quantum dot, a quantum rod, a micro LED, or a nano LED.
[0076] An encapsulation layer (ECL) can be disposed on a display element layer (D-OL). The encapsulation layer (ECL) can protect the display element layer (D-OL) from foreign substances such as moisture, oxygen, and dust particles. The encapsulation layer (ECL) can be disposed directly on the display element layer (D-OL) or can be coupled to the display element layer (D-OL) through a separate member.
[0077] In one embodiment, the encapsulation layer (ECL) may include a plurality of layers. The encapsulation layer (ECL) may include a first inorganic encapsulation layer (IOL1, FIG. 8) disposed on a display element layer, and an organic encapsulation layer (OL, FIG. 8) disposed on the first inorganic encapsulation layer (IOL1, FIG. 8). Additionally, the encapsulation layer (ECL) may further include a second inorganic encapsulation layer (IOL2, FIG. 8) disposed on the organic encapsulation layer (OL, FIG. 8). The first inorganic encapsulation layer (IOL1, FIG. 8) may include a first encapsulation portion (P1) overlapping a hole region (HA) and a second encapsulation portion (P2) overlapping a display region (AA). The first encapsulation portion (P1) and the second encapsulation portion (P2) may be distinguished based on whether or not the first inorganic layer (IL1, FIG. 12a) is disposed. The envelope layer (ECL) will be described in more detail later in the explanation below from Fig. 11.
[0078] In a display module (DM) of one embodiment, an input sensor (ISL) may be placed on an encapsulation layer (ECL). The input sensor (ISL) may be formed on the encapsulation layer (ECL) through a continuous process. In this case, it may be described that the input sensor (ISL) is placed directly on the encapsulation layer (ECL). Being placed directly means that no third component is placed between the input sensor (ISL) and the encapsulation layer (ECL). That is, a separate adhesive member may not be placed between the input sensor (ISL) and the encapsulation layer (ECL). Alternatively, the input sensor (ISL) may be bonded to the encapsulation layer (ECL) through an adhesive member. The adhesive member may include a conventional adhesive or a pressure-sensitive adhesive.
[0079] FIG. 6 is a schematic plan view showing a part of a display module according to one embodiment. FIG. 6 shows the XX' region of FIG. 4, and the XX' region may be a region corresponding to a part of an active region (DM-AA) including a module hole (HH).
[0080] Referring to FIG. 6, a plurality of pixels (PX) may be disposed in the active area (DM-AA) of the display module (DM). In one embodiment, most of the pixels (PX) among the plurality of pixels (PX) are disposed in a display area (AA, or second area) spaced apart from the hole area (HA), and some of the pixels (PX) may be disposed in the display area (AA) along the boundary between the hole area (HA, or first area) and the display area (AA). Pixels (PX) adjacent to the boundary of the hole area (HA) may be disposed spaced apart from the module hole (HH).
[0081] A module hole (HH) may be defined in the hole region (HA). The module hole (HH) may be defined within the active region (DM-AA). Accordingly, at least some of the pixels (PX) may be arranged adjacent to the module hole (HH), and the pixels (PX) may also be arranged spaced apart from each other with the module hole (HH) in between. An electronic module (EM) may overlap with the module hole (HH).
[0082] A dam pattern (DMP) may be placed in the hole area (HA). An electronic device (ED, FIG. 3) according to one embodiment may block the path for moisture and / or oxygen to flow from the module hole (HH) into the pixels (PX) by the dam pattern (DMP). The dam pattern (DMP) is placed in the hole area (HA) and may include at least one dam portion (DM1, DM2, DM3). Each of the dam portions (DM1, DM2, DM3) may surround at least a portion of the module hole (HH). According to one embodiment, each of the dam portions (DM1, DM2, DM3) may have a closed-line shape surrounding the module hole (HH) in a planar view. Each of the dams (DM1, DM2, DM3) may be disposed on the same layer as at least some of the insulating layers (10, 20, 30, 40, 50, 60, FIG. 7) described later, and may be formed in the same process step.
[0083] At least one groove (GV1, GV2, GV3) may be defined in the hole area (HA). The groove (GV1, GV2, GV3) may be defined surrounding the module hole (HH). The groove (GV1, GV2, GV3) may be defined between the dams (DM1, DM2, DM3) or between at least one of the dams and the display area (AA). In one embodiment, the groove (GV1, GV2, GV3) may be defined by the dams (DM1, DM2, DM3) or by a protrusion pattern (MTP).
[0084] In one embodiment, a filling material may be further disposed inside the module hole (HH). The filling material may include a polymer resin. As the filling material is disposed inside the module hole (HH), it may provide a flat surface to the configuration disposed on the module hole (HH). Additionally, a material that is transparent and does not have optical anisotropy may be used as the filling material. The filling material may be used without limitation as long as it is a configuration that does not degrade the sensing capability of the electronic module (EM, FIG. 4). Meanwhile, the filling material may be omitted.
[0085] A portion of each of the plurality of signal lines (SGL1, SGL2) connected to pixels (PX) may be placed in the hole region (HA). The signal lines (SGL1, SGL2) are connected to pixels (PX) separated by a module hole (HH) via the hole region (HA). For ease of explanation, two signal lines (SGL1, SGL2) among the plurality of signal lines connected to pixels (PX) are illustrated exemplarily in FIG. 6.
[0086] The first signal line (SGL1) extends along the first direction (DR1). The first signal line (SGL1) is connected to pixels (PX) within the same row arranged along the first direction (DR1). The first signal line (SGL1) is exemplarily described as corresponding to any one of the scan lines connected to the pixels (PX).
[0087] Some of the pixels (PX) connected to the first signal line (SGL1) are positioned to the left of the module hole (HH), and others are positioned to the right of the module hole (HH). Accordingly, pixels (PX) within the same row connected to the first signal line (SGL1) can be turned on / off by substantially the same scan signal even if some pixels are omitted around the module hole (HH).
[0088] The second signal line (SGL2) extends along the second direction (DR2). The second signal line (SGL2) is connected to pixels (PX) within the same column arranged along the second direction (DR2). The second signal line (SGL2) is exemplarily described as corresponding to any one of the data lines connected to the pixels (PX).
[0089] Some of the pixels connected to the second signal line (SGL2) are positioned on the upper side centered on the module hole (HH), and others are positioned on the lower side centered on the module hole (HH). Accordingly, pixels within the same column connected to the second signal line (SGL2) can receive data signals through the same line even if some pixels are omitted centered on the module hole (HH).
[0090] At the point where the first signal line (SGL1) and the second signal line (SGL2) intersect, at least one of the first signal line (SGL1) and the second signal line (SGL2) may be disconnected within the hole area (HA), and may further include a connection pattern that is disposed on a different layer from the disconnected signal line to connect the disconnected portion. However, the connection relationship of pixels (PX) spaced apart with the module hole (HH) in between is not limited thereto.
[0091] FIGS. 7 and FIGS. 8 are each cross-sectional views of a portion of a display module according to one embodiment. FIGS. 7 may be a portion corresponding to line II-II' of FIGS. 6, and FIGS. 8 may be a portion corresponding to line III-III' of FIGS. 7 illustrates a portion of a display area (AA, FIG. 6), and FIGS. 8 illustrates a portion of a hole area (HA, FIG. 6).
[0092] Referring to FIGS. 7 and 8, the display module (DM) includes a display panel (DP) and an input sensor (ISL), and the display panel (DP) may include a base layer (BS), a circuit layer (D-CL), a display element layer (D-OL), and an encapsulation layer (ECL) stacked sequentially.
[0093] FIG. 7 illustrates an exemplary part corresponding to the pixel (PX, FIG. 6) described in FIG. 6. FIG. 7 illustrates an exemplary transistor (TR) and a light-emitting element (LD) included in the pixel (PX, FIG. 6).
[0094] The circuit layer (D-CL) may include a buffer layer (BFL), a shielding electrode (BML), a transistor (TR), a signal transmission region (SCL), a plurality of insulating layers (10, 20, 30, 40, 50, 60), an upper electrode pattern (EE), and a plurality of connecting electrodes (CNE1, CNE2). Meanwhile, although not illustrated, the circuit layer (D-CL) may further include a plurality of conductive patterns. For example, the circuit layer (D-CL) may further include additional conductive patterns constituting a plurality of transistors, capacitors, or connecting electrodes in addition to the illustrated transistor (TR). Meanwhile, the configuration of the circuit layer (D-CL) illustrated in FIG. 7, etc. is exemplary, and the types, number, placement locations of the conductive patterns, and the number of insulating layers may be changed.
[0095] A buffer layer (BFL) can be disposed on a base layer (BS). The buffer layer (BFL) can improve the bonding strength between the base layer (BS) and a semiconductor pattern or conductive pattern disposed on the buffer layer (BFL). Additionally, the buffer layer (BFL) can prevent metal atoms or impurities from the base layer (BS) from diffusing into the semiconductor pattern or conductive pattern.
[0096] The buffer layer (BFL) may be an inorganic film. The buffer layer (BFL) may include at least one of silicon oxide, silicon nitride, and silicon oxynitride. For example, the buffer layer (BFL) may include a structure in which silicon oxide layers and silicon nitride layers are alternately stacked. In one embodiment, the buffer layer (BFL) may be omitted.
[0097] A shielding electrode (BML) may be placed on a buffer layer (BFL). The shielding electrode (BML) may be superimposed on a transistor (TR). Additionally, in one embodiment, a shielding electrode (BML) may also be placed below a signal transmission region (SCL). The shielding electrode (BML) can protect semiconductor patterns or conductive patterns, such as the transistor (TR) and the signal transmission region (SCL), by blocking light incident from the bottom of the display panel (DP) to the transistor (TR) or the signal transmission region (SCL). The shielding electrode (BML) may include a conductive material. When a voltage is applied to the shielding electrode (BML), the threshold voltage of the transistor (TR) placed on the shielding electrode (BML) may be maintained. Not limited thereto, the shielding electrode (BML) may be a floating electrode. In one embodiment, the shielding electrode (BML) may be omitted.
[0098] The circuit layer (D-CL) may include a plurality of sequentially stacked insulating layers (10, 20, 30, 40, 50, 60). The insulating layers (10, 20, 30, 40, 50, 60) may be disposed on a buffer layer (BFL). The insulating layers (10, 20, 30, 40, 50, 60) may be inorganic layers or organic layers. For example, in one embodiment, the first to fourth insulating layers (10, 20, 30, 40) may comprise an inorganic film, and the fifth insulating layer (50) and the sixth insulating layer (60) may comprise an organic film. However, the embodiment is not limited thereto. Additionally, the circuit layer (D-CL) may omit at least one of the first to sixth insulating layers (10, 20, 30, 40, 50, 60) or may further include an additional insulating layer.
[0099] The first insulating layer (10) may be disposed on the buffer layer (BFL). The first insulating layer (10) may include an inorganic film. The first insulating layer (10) may also be referred to as the first inorganic film. For example, the first insulating layer (10) may be an inorganic film comprising at least one of aluminum oxide, titanium oxide, silicon oxide, silicon nitride, silicon oxynitride, zirconium oxide, and hafnium oxide. The first insulating layer (10) may have a single layer or a multilayer structure. The first insulating layer (10) may have a structure in which a plurality of inorganic films are stacked.
[0100] Additionally, in one embodiment, the first insulating layer (10) may further include an organic film in addition to an inorganic film. When the first insulating layer (10) includes a structure in which an inorganic film and an organic film are stacked, the first insulating layer (10) may further include a buffer inorganic film disposed between adjacent inorganic films and organic films.
[0101] Meanwhile, the same content described in the first insulating layer (10) can be applied to the second insulating layer to the fourth insulating layer (20, 30, 40) described later. Each of the second insulating layer to the fourth insulating layer (20, 30, 40) may be referred to as the second to fourth inorganic film. Each of the second insulating layer to the fourth insulating layer (20, 30, 40) may have a single-layer or multi-layer structure. For example, each of the second insulating layer to the fourth insulating layer (20, 30, 40) may independently include at least one of silicon oxide, silicon nitride, and silicon oxynitride.
[0102] A semiconductor pattern may be disposed on the circuit layer (D-CL). The semiconductor pattern may include polysilicon. However, it is not limited thereto, and the semiconductor pattern may include amorphous silicon or metal oxide. The electrical properties of the semiconductor pattern may differ depending on whether it is doped. The semiconductor pattern may include a first region with a high doping concentration and a second region with a low doping concentration. The first region may be doped with an N-type dopant or a P-type dopant. A P-type transistor may include a first region doped with a P-type dopant.
[0103] The first region is more conductive than the second region and substantially functions as an electrode or signal line. The second region substantially corresponds to the active (or channel) of the transistor. That is, a part of the semiconductor pattern may be the active of the transistor, another part may be the source or drain of the transistor, and yet another part may be a conductive region.
[0104] Referring to FIG. 7, in one embodiment, a transistor (TR) may be disposed on a first insulating layer (10). Although not illustrated, the transistor (TR) may be electrically connected to a light-emitting element (LD). The source (SD), active (AD), and drain (DD) of the transistor (TR) may be formed from a semiconductor pattern. Additionally, FIG. 7 shows a portion of a signal transmission region (SCL) formed from a semiconductor pattern. The signal transmission region (SCL) may be disposed on the first insulating layer (10). Meanwhile, although not separately illustrated, the signal transmission region (SCL) may be connected to the drain (DD) of the transistor (TR) on a plane.
[0105] The second insulating layer (20) can cover the source (SD), active (AD), drain (DD), and signal transmission region (SCL) of the transistor (TR) placed on the first insulating layer (10). The gate (GD) of the transistor (TR) can be placed on the second insulating layer (20). The third insulating layer (30) can be placed on the second insulating layer (20) to cover the gate (GD). An upper electrode pattern (EE) can be placed on the third insulating layer (30). The fourth insulating layer (40) can be placed on the third insulating layer (30) to cover the upper electrode pattern (EE).
[0106] A first connecting electrode (CNE1) may be disposed on a fourth insulating layer (40). The first connecting electrode (CNE1) may be connected to a signal transmission area (SCL) through a contact hole (CH1) penetrating the second to fourth insulating layers (20, 30, 40). A fifth insulating layer (50) may be disposed on the fourth insulating layer (40) to cover the first connecting electrode (CNE1). The fifth insulating layer (50) may be an organic layer. In this specification, the fifth insulating layer (50) may be referred to as a "first intermediate insulating layer."
[0107] A second connecting electrode (CNE2) may be disposed on the fifth insulating layer (50). The second connecting electrode (CNE2) may be connected to the first connecting electrode (CNE1) through a contact hole (CH2) penetrating the fifth insulating layer (50). A sixth insulating layer (60) may be disposed on the fifth insulating layer (50) to cover the second connecting electrode (CNE2). The sixth insulating layer (60) may be an organic layer. In this specification, the sixth insulating layer (60) may be referred to as a "second intermediate insulating layer."
[0108] Each of the fifth insulating layer (50) and the sixth insulating layer (60) may independently include at least one of an acrylic resin, a methacrylic resin, a polyisoprene resin, a vinyl resin, an epoxy resin, a urethane resin, a cellulose resin, a siloxane resin, a polyamide resin, and a perylene resin.
[0109] A display element layer (D-OL) may be disposed on a circuit layer (D-CL). The display element layer (D-OL) may include a light-emitting element (LD) and a pixel defining film (PDL). The light-emitting element (LD) may include a first electrode (AE), a second electrode (CE) facing the first electrode (AE), and a functional layer (EL) disposed between the first electrode (AE) and the second electrode (CE).
[0110] A light-emitting opening (OH) that exposes a portion of the upper surface of the first electrode (AE) may be defined in the pixel defining film (PDL). A light-emitting region (EA) may be defined to correspond to the light-emitting opening (OH).
[0111] The first electrode (AE) may be disposed on the circuit layer (D-CL). In one embodiment, the first electrode (AE) may be disposed on the sixth insulating layer (60) of the circuit layer (D-CL). The first electrode (AE) may be connected to the second connecting electrode (CNE2) by a connection contact hole (CH3) defined through the sixth insulating layer (60). Thus, the first electrode (AE) may be electrically connected to the signal transmission region (SCL) through the first and second connecting electrodes (CNE1, CNE2) and electrically connected to the corresponding circuit element. The first electrode (AE) may include a single layer or a multilayer structure.
[0112] FIGS. 9a and 9b are cross-sectional views schematically illustrating a light-emitting element (LD) according to one embodiment. A light-emitting element (LD) according to one embodiment may include a first electrode (AE), a second electrode (CE) facing the first electrode (AE), and a functional layer (EL) disposed between the first electrode (AE) and the second electrode (CE).
[0113] Referring to FIGS. 9a and 9b, the first electrode (AE) may be an anode or a cathode. Additionally, the first electrode (AE) may be a pixel electrode. The second electrode (CE) may be a cathode or an anode. The second electrode (CE) may be a common electrode. For example, if the first electrode (AE) is an anode, the second electrode (CE) may be a cathode, and if the first electrode (AE) is a cathode, the second electrode (CE) may be an anode.
[0114] The first electrode (AE) may be a transparent electrode, a semitransparent electrode, or a reflective electrode. The first electrode (AE) may include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF / Ca, LiF / Al, Mo, Ti, W, or compounds or mixtures thereof (e.g., a mixture of Ag and Mg). Alternatively, the first electrode (AE) may have a plurality of layer structures including a reflective film or a semitransparent film formed of the above materials and a transparent conductive film formed of ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), ITZO (indium tin zinc oxide), etc. For example, the first electrode (AE) may have a three-layer structure of ITO / Ag / ITO, but is not limited thereto. In addition, the embodiments are not limited thereto, and the first electrode (AE) may include the metal material described above, a combination of two or more metal materials selected from the metal materials described above, or oxides of the metal materials described above.
[0115] The second electrode (CE) may be a transparent electrode, a semitransparent electrode, or a reflective electrode. If the second electrode (CE) is a transparent electrode, the second electrode (CE) may be composed of a transparent metal oxide, for example, ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), ITZO (indium tin zinc oxide), etc. Additionally, the second electrode (CE) may be formed by including Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF / Ca, LiF / Al, Mo, Ti, W, or compounds or mixtures thereof (for example, a mixture of Ag and Mg).
[0116] The functional layer (EL) may include an emitting layer (EML). The emitting layer (EML) may include an emitting material such as an organic material or quantum dots. The functional layer (EL) including the emitting layer (EML) may emit light of at least one color among blue, red, and green at each distinct pixel. Meanwhile, in one embodiment, the functional layer (EL) may provide blue light throughout the entire active area (DM-AA, FIG. 4).
[0117] The functional layer (EL) may further include a hole control layer (HTR) and an electronic control layer (ETR), in addition to the light-emitting layer (EML). The hole control layer (HTR) may be disposed between the first electrode (AE) and the light-emitting layer (EML). The hole control layer (HTR) may include at least one of a hole transport layer and a hole injection layer. The electronic control layer (ETR) may be disposed between the light-emitting layer (EML) and the second electrode (CE). The electronic control layer (ETR) may include at least one of an electron transport layer and an electron injection layer.
[0118] Among the functional layers (EL), the light-emitting layer (EML) may be patterned to correspond to the light-emitting region (EA). Additionally, among the functional layers (EL), the hole control layer (HTR) and the electronic control layer (ETR) may be formed commonly across a plurality of pixels (PX, FIG. 6). That is, the hole control layer (HTR) and the electronic control layer (ETR), etc., may be provided as a common layer across the entire pixel (PX, FIG. 6). However, the embodiments are not limited thereto, and the hole control layer (HTR) and the electronic control layer (ETR) may be patterned to correspond to the light-emitting region (EA) or may be provided in a form where a portion is short-circuited by overlapping with the pixel definition film (PDL).
[0119] FIG. 9b shows a cross-sectional view of a light-emitting element (LD) of one embodiment including a capping layer (CPL) disposed on a second electrode (EL2) compared with FIG. 9a.
[0120] Referring to FIG. 9b, the light-emitting element (LD) may further include a capping layer (CPL) disposed on the second electrode (EL2). The capping layer (CPL) may include a multilayer or a single layer.
[0121] In one embodiment, the capping layer (CPL) may be an organic layer or an inorganic layer. For example, if the capping layer (CPL) includes an inorganic material, the inorganic material may be an alkali metal compound such as LiF, an alkaline earth metal compound such as MgF2, SiON, or SiN X It may include SiOy, etc.
[0122] For example, when the capping layer (CPL) contains an organic material, the organic material may include α-NPD, NPB, TPD, m-MTDATA, Alq3, CuPc, TPD15 (N4,N4,N4',N4'-tetra (biphenyl-4-yl) biphenyl-4,4'-diamine), TCTA (4,4',4"- Tris (carbazol sol-9-yl) triphenylamine), etc., or may include an epoxy resin or an acrylate such as methacrylate. However, the examples are not limited thereto.
[0123] Meanwhile, the refractive index of the capping layer (CPL) may be 1.6 or higher. Specifically, for light in a wavelength range of 550 nm or more and 660 nm or less, the refractive index of the capping layer (CPL) may be 1.6 or higher.
[0124] Referring again to FIG. 8, in one embodiment, the pixel defining film (PDL) may have a single-layer or multi-layer structure. The pixel defining film (PDL) may be formed from a polymer resin. For example, the pixel defining film (PDL) may be formed by including a polyacrylate-based resin or a polyimide-based resin. Additionally, the pixel defining film (PDL) may be formed by including inorganic materials in addition to the polymer resin. Meanwhile, the pixel defining film (PDL) may be formed by including a light-absorbing material or by including a black pigment or a black dye. A pixel defining film (PDL) formed by including a black pigment or a black dye can realize a black pixel defining film. When forming the pixel defining film (PDL), carbon black or the like may be used as the black pigment or black dye, but the embodiment is not limited thereto.
[0125] In addition, the pixel defining layer (PDL) can be formed from inorganic materials. For example, the pixel defining layer (PDL) is silicon nitride (SiN x ), silicon oxide (SiO x ), or silicon oxynitride (SiO₂) x N y It can be formed from inorganic materials such as ).
[0126] The encapsulation layer (ECL) may be disposed on the second electrode (CE) of the light-emitting element (LD). The encapsulation layer (ECL) may be disposed directly on the second electrode (CE) of the light-emitting element (LD). If the light-emitting element (LD) further includes a capping layer (CPL), the encapsulation layer (ECL) may be disposed on the capping layer (CPL). The encapsulation layer (ECL) may be disposed directly on the capping layer (CPL). The encapsulation layer (ECL) may cover the light-emitting element (LD). In one embodiment, the encapsulation layer (ECL) may be disposed on the dam pattern (DMP) and grooves (GV1, GV2, GV3) in the hole region (HA) of the display module (EDM).
[0127] The encapsulation layer (ECL) may include a plurality of layers. The encapsulation layer (ECL) may include a first inorganic encapsulation layer (IOL1, FIG. 8) disposed on the display element layer, and an organic encapsulation layer (OL, FIG. 8) disposed on the first inorganic encapsulation layer (IOL1, FIG. 8). Additionally, the encapsulation layer (ECL) may further include a second inorganic encapsulation layer (IOL2, FIG. 8) disposed on the organic encapsulation layer (OL, FIG. 8). In one embodiment, the encapsulation layer (ECL) may include a first inorganic encapsulation layer (IOL1), an organic encapsulation layer (OL), and a second inorganic encapsulation layer (IOL2) sequentially stacked in a third direction (DR3). However, the embodiment is not limited thereto, and the number of stacked encapsulation layers may vary. For example, the encapsulation layer (ECL) may further include an additional organic encapsulation layer and an additional inorganic encapsulation layer sequentially disposed on the second inorganic encapsulation layer (IOL2).
[0128] The first inorganic encapsulation layer (IOL1) and the second inorganic encapsulation layer (IOL2) can protect the display element layer (D-OL) from moisture and oxygen, and the organic encapsulation layer (OL) can protect the display element layer (D-OL) from foreign substances such as dust particles.
[0129] The input sensor (ISL) may be placed on the display panel (DP). The input sensor (ISL) may be placed directly on the encapsulation layer (ECL). The input sensor (ISL) may be placed directly on the second inorganic encapsulation layer (IOL2). The input sensor (ISL) may include a sensor base layer (210), a first sensor conductive layer (220), a sensor insulating layer (230), a second sensor conductive layer (240), and a sensor cover layer (250).
[0130] The sensor base layer (210) may be placed directly on the display panel (DP). The sensor base layer (210) may be an inorganic layer comprising at least one of silicon nitride, silicon oxynitride, and silicon oxide. Alternatively, the sensor base layer (210) may be an organic layer comprising epoxy resin, acrylic resin, or imide-based resin. The sensor base layer (210) may have a single-layer structure or a multi-layer structure stacked along a third direction (DR3).
[0131] Each of the first sensor conductive layer (220) and the second sensor conductive layer (240) may have a single-layer structure or a multi-layer structure stacked along the third direction (DR3).
[0132] The single-layer conductive layer may include a metal layer or a transparent conductive layer. The metal layer may include molybdenum, silver, titanium, copper, aluminum, or an alloy thereof. The transparent conductive layer may include a transparent conductive oxide such as indium tin oxide, indium zinc oxide, zinc oxide, or indium zinc-tin oxide. Additionally, the transparent conductive layer may include a conductive polymer such as PEDOT, metal nanowires, graphene, etc.
[0133] The conductive layer of the multilayer structure may include metal layers. The metal layers may have a three-layer structure, for example, titanium / aluminum / titanium. The conductive layer of the multilayer structure may include at least one metal layer and at least one transparent conductive layer.
[0134] A sensor insulating layer (230) may be disposed between a first sensor conductive layer (220) and a second sensor conductive layer (240). A sensor cover layer (250) may be disposed on the sensor insulating layer (230) and may cover the second sensor conductive layer (240). The second sensor conductive layer (240) may include a conductive pattern. The sensor cover layer (250) covers the conductive pattern and may reduce or eliminate the probability of damage occurring to the conductive pattern in a subsequent process.
[0135] Each of the sensor insulating layer (230) and the sensor cover layer (250) may include an inorganic film. The inorganic film may include at least one of aluminum oxide, titanium oxide, silicon oxide, silicon nitride, silicon oxynitride, zirconium oxide, and hafnium oxide.
[0136] Alternatively, the sensor insulating layer (230) and the sensor cover layer (250) may each include an organic film. The organic film may include at least one of an acrylic resin, a methacrylic resin, a polyisoprene, a vinyl resin, an epoxy resin, a urethane resin, a cellulose resin, a siloxane resin, a polyimide resin, a polyamide resin, and a perylene resin.
[0137] Referring to FIGS. 6 and FIGS. 8, a module hole (HH) is defined in the display module (DM), and the display module (DM) may include a hole area (HA) that includes the module hole (HH) formed by penetrating it. The module hole (HH) is formed by penetrating the display module (DM) and may be defined by the exposed side wall (DM-HS) of the display module (DM).
[0138] The display module (DM) may include a plurality of dampers (DM1, DM2, DM3) disposed in the hole area (HA). The dampers (DM1, DM2, DM3) can protect the display element layer (D-OL), etc., during the process of forming the module hole (HH). For example, the dampers (DM1, DM2, DM3) can prevent physical impacts, such as cracks that may occur during the formation of the module hole (HH), from being transmitted to the display area (AA). In addition, the dampers (DM1, DM2, DM3) can prevent chemical materials, etc., used during the processing of the display module (DM), such as the formation of the module hole (HH), from penetrating into the display area (AA). Furthermore, the dampers (DM1, DM2, DM3) may function to prevent the flow of the resin composition when an excessive amount of resin composition, etc., is provided during the formation of the organic encapsulation layer (OL) of the encapsulation layer (ECL).
[0139] Meanwhile, although three dam sections (DM1, DM2, DM3) are shown arranged in FIGS. 4 and 6, the embodiment is not limited thereto. The number of dam sections may be two or fewer, or four or more.
[0140] Dam portions (DM1, DM2, DM3) may be disposed on a base layer (BS). In one embodiment, the dam portions (DM1, DM2, DM3) may be disposed on a lower insulating layer (LIL). The lower insulating layer (LIL) may include the first to fourth insulating layers (10, 20, 30, 40) described in FIG. 7. Meanwhile, the fourth insulating layer (40) disposed at the top of the lower insulating layer (LIL) may be described as the "first lower insulating layer."
[0141] One embodiment may include a first dam portion (DM1) arranged surrounding a module hole (HH), and a second dam portion (DM2) arranged surrounding the first dam portion (DM1). Additionally, in one embodiment, the display module (DM) may further include a third dam portion (DM3) surrounding the second dam portion (DM2) and adjacent to a display area (AA).
[0142] Grooves (GV1, GV2, GV3) may be defined between the dams (DM1, DM2, DM3). A first groove (GV1) may be defined between the first dam (DM1) and the second dam (DM2), and a second groove (GV2) may be defined between the second dam (DM2) and the third dam (DM3). In the display module (DM) of an embodiment illustrated in FIG. 8, etc., a third groove (GV3) may be defined between a part of the display panel (DP) at the boundary between the display area (AA) and the hole area (HA) and the third dam (DM3).
[0143] Each of the dam sections (DM1, DM2, DM3) may include a plurality of dam layers stacked in a third direction (DR3) which is the thickness direction. The first dam section (DM1) and the second dam section (DM2) may each include a first dam layer (DM1-B, DM2-B) and a second dam layer (DM1-T, DM2-T). The second dam layer (DM1-T, DM2-T) may be disposed on the first dam layer (DM1-B, DM2-B).
[0144] The first dam layer (DM1-B, DM2-B) may be placed on the same layer as the fifth insulating layer (50), and the second dam layer (DM1-T, DM2-T) may be placed on the same layer as the sixth insulating layer (60). For example, the first dam layer (DM1-B, DM2-B) may be formed in the same process step as the fifth insulating layer (50), and the second dam layer (DM1-T, DM2-T) may be formed in the same process step as the sixth insulating layer (60). Specifically, in one embodiment, the first dam layer (DM1-B, DM2-B) may be an organic layer formed of the same material as the fifth insulating layer (50), and the second dam layer (DM1-T, DM2-T) may be an organic layer formed of the same material as the sixth insulating layer (60). However, the embodiment is not limited thereto.
[0145] In FIG. 8 and the like, the first dam section (DM1) and the second dam section (DM2) are each depicted as including two dam layers, but the embodiment is not limited thereto, and at least one of the first dam section (DM1) and the second dam section (DM2) may include three dam layers or only one dam layer.
[0146] Meanwhile, in one embodiment, the third dam portion (DM3) may include a first dam layer (DM3-B), a second dam layer (DM3-T), and a third dam layer (DM3-A) stacked in the third direction (DR3). In the third dam portion (DM3), the first dam layer (DM3-B, DM2-B) may be formed in the same process step as the fifth insulating layer (50), the second dam layer (DM3-T) may be formed in the same process step as the sixth insulating layer (60), and the third dam layer (DM3-A) may be formed in the same process step as the pixel defining film (PDL). However, the embodiment is not limited thereto.
[0147] In one embodiment, each of the first dam layer (DM1-B, DM2-B, DM3-B) and the second dam layer (DM1-T, DM2-T, DM3-T) may have inclined sides. However, the embodiment is not limited thereto, and unlike what is illustrated, at least some of the first dam layer (DM1-B, DM2-B, DM3-B) and the second dam layer (DM1-T, DM2-T, DM3-T) may be formed to include sides having a curved shape.
[0148] The circuit layer (DP-CL) may further include a protruding pattern (MTP). The protruding pattern (MTP) may be disposed on at least some of the dams (DM1, DM2, DM3). The protruding pattern (MTP) may be disposed on the first dam layer (DM1-B, DM2-B, DM3-B). The protruding pattern (MTP) may be disposed between the first dam layer (DM1-B, DM2-B, DM3-B) and the second dam layer (DM1-T, DM2-T, DM3-T). The protruding pattern (MTP) may be disposed on the first dam layer (DM1-B, DM2-B, DM3-B) and may include a protruding pattern (MTP) having a width greater than the width in one direction of the first dam layer (DM1-B, DM2-B, DM3-B) and including a protruding portion.
[0149] The protruding pattern (MTP) can be formed in the same process as any one of the conductive patterns of the circuit layer (D-CL) placed in the display area (AA). For example, the protruding pattern (MTP) can be formed in the same process step as the second connecting electrode (CNE2). Specifically, the protruding pattern (MTP) can be formed from the same material as the second connecting electrode (CNE2). However, the embodiments are not limited thereto.
[0150] The display module (DM) may further include weapon dams (IOP) placed in the hole area (HA). Although FIG. 8 shows two weapon dams (IOP) placed adjacent to the module hole (HH) portion, the embodiment is not limited thereto, and at least one of the weapon dams (IOP) may be omitted, or more weapon dams may be placed.
[0151] In one embodiment, each of the inorganic dams (IOP) may include a first layer (ILP1) and a second layer (ILP2). The first layer (ILP1) may include the same material as the first insulating layer (10) and may be formed by the same process as the first insulating layer (10). The second layer (ILP2) may include the same material as the second insulating layer (20) and may be formed by the same process as the second insulating layer (20). However, this is merely an example, and the composition of the layers constituting each of the inorganic dams (IOP) may be varied in many ways. The width of the first layer (ILP1) may be greater than the width of the second layer (ILP2). In one embodiment, each of the inorganic dams (IOP) may have a stepped shape.
[0152] Referring to FIGS. 7 and 8, the encapsulation layer (ECL) covers the configuration of the display element layer (D-OL) and the exposed circuit layer (D-CL). In the display area (AA), the encapsulation layer (ECL) covers the light-emitting element (LD) and the pixel defining film (PDL), and in the hole area (HA), the encapsulation layer (ECL) can cover the exposed portion of the circuit layer (D-CL), the damp portions (DM1, DM2, DM3), and the grooves (GV1, GV2, GV3) defined between the damp portions (DM1, DM2, DM3).
[0153] The first inorganic encapsulation layer (IOL1) may be disposed on the second electrode (CE). The first inorganic encapsulation layer (IOL1) may be disposed on the dam portion (DM1, DM2, DM3), a part of the protruding pattern (MTP), and the groove (GV1, GV2, GV3). The first inorganic encapsulation layer (IOL1) may cover the exposed surfaces of each of the dam portion (DM1, DM2, DM3), the part of the protruding pattern (MTP), and the groove (GV1, GV2, GV3). The first inorganic encapsulation layer (IOL1) may protect the components of the display panel (DP) from moisture and oxygen, etc., outside the display panel (DP).
[0154] The first inorganic encapsulation layer (IOL1) may include a plurality of inorganic layers. The first inorganic encapsulation layer (IOL1) may include a plurality of inorganic layers having different refractive indices. Each of the plurality of inorganic layers included in the first inorganic encapsulation layer (IOL1) may independently include at least one of silicon nitride, silicon oxide, and silicon oxynitride.
[0155] The first inorganic encapsulation layer (IOL1) can be formed in various ways. For example, the first inorganic encapsulation layer (IOL1) may be a layer formed by any one of the following methods: chemical vapor deposition (CVD), plasma-enhanced atomic layer deposition (PEALD), plasma-enhanced chemical vapor deposition (PECVD), sputtering, and electron beam deposition (E-beam evaporator). A description of the plurality of inorganic layers included in the first inorganic encapsulation layer (IOL1) will be provided later.
[0156] The encapsulation layer (ECL) may include an organic encapsulation layer (OL) disposed on a first inorganic encapsulation layer (IOL1). The organic encapsulation layer (OL) is disposed on the first inorganic encapsulation layer (IOL1) and may overlap with at least some of the first to third grooves (GV1, GV2, GV3). For example, the organic encapsulation layer (OL) may overlap with the third groove (GV3). The organic encapsulation layer (OL) may not overlap with the first groove (GV1) and the second groove (GV2).
[0157] The encapsulation layer (ECL) may further include a second inorganic encapsulation layer (IOL2) disposed on the organic encapsulation layer (OL). The second inorganic encapsulation layer (IOL2) is disposed on the organic encapsulation layer (OL) and can cover all of the first to third grooves (GV1, GV2, GV3). In a part of the hole region (HA), the second inorganic encapsulation layer (IOL2) may be disposed directly on the first inorganic encapsulation layer (IOL1). In the region corresponding to the first groove (GV1) and the second groove (GV2) where the organic encapsulation layer (OL) is not disposed, the second inorganic encapsulation layer (IOL2) may contact the upper surface of the first inorganic encapsulation layer (IOL1).
[0158] The first inorganic encapsulation layer (IOL1) may include a first encapsulation portion (P1) overlapping the hole region (HA) and a second encapsulation portion (P2) overlapping the display region (AA). The first encapsulation portion (P1) and the second encapsulation portion (P2) may be distinguished based on whether or not the first inorganic layer (IL1, FIG. 12a) is placed. The first encapsulation portion (P1) is a portion of the first inorganic encapsulation layer (IOL1) where the first inorganic layer (IL1, FIG. 12a) is not placed, and the second encapsulation portion (P2) may correspond to a portion of the first inorganic encapsulation layer (IOL1) where the first inorganic layer (IL1, FIG. 12a) is placed.
[0159] FIGS. 10a and FIGS. 10b are enlarged plan views of a portion of a display module according to one embodiment of the present invention. FIGS. 10a and FIGS. 10b are plan views schematically showing the arrangement structure of a first inorganic encapsulation layer (IOL1) according to one embodiment.
[0160] Referring to FIG. 10a, the first inorganic encapsulation layer (IOL1) may include a first encapsulation portion (P1) and a second encapsulation portion (P2). In a planar view, the first encapsulation portion (P1) may overlap with the hole region (HA), and the second encapsulation portion (P2) may overlap with the display region (AA). The first encapsulation portion (P1) corresponds to the portion where the first inorganic layer (IL1, FIG. 12a) is not placed. As illustrated in FIG. 10a, the first encapsulation portion (P1) may overlap with the hole region (HA) and not overlap with the display region (AA). In a planar view, the first encapsulation portion (P1) may not overlap with the pixels (PX).
[0161] Referring to FIG. 10b, the first encapsulation portion (P1) may overlap with a part of the display area (AA). The first encapsulation portion (P1) may overlap entirely with the hole area (HA) and may also overlap with a part of the display area (AA) adjacent to the hole area (HA). In a planar view, the first encapsulation portion (P1) may overlap with some pixels (PX) placed in the display area (AA). The planar position of the first encapsulation portion (P1) may vary depending on the shape of the mask used during the deposition of the first inorganic film (IL1, FIG. 12a). If the mask used during the deposition of the first inorganic film (IL1, FIG. 12a) is sufficient to block the hole area (HA) and is provided to block a part of the display area (AA), the first encapsulation portion (P1) may have a planar arrangement structure as shown in FIG. 10b.
[0162] Referring to FIGS. 10a and 10b, the first encapsulation portion (P1) may overlap with the hole region (HA). That is, the first inorganic layer (IL1, FIG. 12a) may not overlap with the hole region (HA). The first inorganic layer (IL1, FIG. 12a) may overlap with at least a portion of the display region (AA) and not overlap with the hole region (HA). Since the first inorganic layer (IL1, FIG. 12a) is not placed in the hole region (HA), it may not overlap with the hole region (HA).
[0163] FIG. 11 is an enlarged cross-sectional view of a portion corresponding to the hole region (HA) in a cross-section of a display module (DM) according to an embodiment of the present invention. FIG. 12a and FIG. 12b are each enlarged cross-sectional views of a portion corresponding to the display region (AA) in a cross-section of a display module (DM) according to an embodiment of the present invention. FIG. 11, FIG. 12a, and FIG. 12b briefly illustrate only the configuration of the display element layer (D-OL) and the encapsulation layer (ECL) of the display module (DM).
[0164] Referring to FIGS. 8, 11, and 12a, a display module (DM) of one embodiment includes a display element layer (D-OL) and an encapsulation layer (ECL) disposed on the display element layer (D-OL). The encapsulation layer (ECL) includes a first inorganic encapsulation layer (IOL1) disposed on the display element layer (D-OL) and an organic encapsulation layer (OL) disposed on the first inorganic encapsulation layer (IOL1). Additionally, the encapsulation layer (ECL) may further include a second inorganic encapsulation layer (IOL2) disposed on the organic encapsulation layer (OL). The first inorganic encapsulation layer (IOL1), the organic encapsulation layer (OL), and the second inorganic encapsulation layer (IOL2) may be sequentially stacked along a third direction (DR3), which is the thickness direction.
[0165] The first inorganic encapsulation layer (IOL1) may include a plurality of inorganic layers. The first inorganic encapsulation layer (IOL1) may include a plurality of inorganic layers having different refractive indices.
[0166] The first inorganic encapsulation layer (IOL1) includes a first inorganic layer (IL1) having a first refractive index and a second inorganic layer (IL2) having a second refractive index. The second refractive index may be greater than the first refractive index. The first encapsulation portion (P1) of the first inorganic encapsulation layer (IOL1) includes the second inorganic layer (IL2), and the second encapsulation portion (P2) of the first inorganic encapsulation layer (IOL1) may include the first inorganic layer (IL1) and the second inorganic layer (IL2). The first inorganic layer (IL1) may not be included in the first encapsulation portion (P1). In the first inorganic encapsulation layer (IOL1), the first encapsulation portion (P1) may not include the first inorganic layer (IL1).
[0167] The first inorganic encapsulation layer (IOL1) of the encapsulation layer (ECL) can be disposed on the display element layer (D-OL). The first inorganic encapsulation layer (IOL1) can cover the light-emitting element (LD) and be disposed on the display element layer (D-OL). The first inorganic encapsulation layer (IOL1) can be directly disposed on the display element layer (D-OL). Additionally, the first inorganic encapsulation layer (IOL1) can be disposed on the dam portion (DM1, DM2, DM3), a part of the protruding pattern (MTP), and the groove (GV1, GV2, GV3).
[0168] In the first encapsulation portion (P1) of the first inorganic encapsulation layer (IOL1), the second inorganic layer (IL2) can be placed directly on the display element layer (D-OL). In the second encapsulation portion (P2) of the first inorganic encapsulation layer (IOL1), the first inorganic layer (IL1) can be placed directly on the display element layer (D-OL). In a part of the hole region (HA), the first inorganic encapsulation layer (IOL1) can be placed on the dam portion (DM1, DM2, DM3), a part of the protruding pattern (MTP), and the groove (GV1, GV2, GV3).
[0169] In the hole region (HA), a portion of the first encapsulation portion (P1) of the first inorganic encapsulation layer (IOL1) may be placed directly on the display element layer (D-OL), and the remaining portion of the first encapsulation portion (P1) may be placed directly on the dam portion (DM1, DM2, DM3), a portion of the protruding pattern (MTP), and the groove (GV1, GV2, GV3). In the hole region (HA), a portion of the second inorganic layer (IL2) may be placed directly on the display element layer (D-OL), and the remaining portion of the second inorganic layer (IL2) may be placed directly on the dam portion (DM1, DM2, DM3), a portion of the protruding pattern (MTP), and the groove (GV1, GV2, GV3).
[0170] The first inorganic layer (IL1) may comprise at least one of lithium fluoride (LiF), silicon nitride, and silicon oxynitride. For example, the first inorganic layer (IL1) may comprise silicon oxynitride. In one embodiment, the thickness of the first inorganic layer (IL1) is 300 More than 2000 It may be less than or equal to. For example, the thickness of the first inorganic layer (IL1) is 1000 More than 1500 It may be less than.
[0171] The first inorganic layer (IL1) has a first refractive index. The first inorganic layer (IL1) may have a smaller refractive index than the second inorganic layer (IL2). The first refractive index of the first inorganic layer (IL1) may be 1.3 or greater and 1.6 or less. The first inorganic layer (IL1) may have a refractive index of 1.3 or greater and 1.6 or less for light in the wavelength range of 400 nm to 700 nm. For example, the first refractive index of the first inorganic layer (IL1) may be 1.57.
[0172] The second inorganic layer (IL2) may include at least one of silicon nitride and silicon oxynitride. For example, the second inorganic layer (IL2) may include silicon oxynitride. The thickness of the second inorganic layer (IL2) may be greater than the thickness of the first inorganic layer (IL1). In one embodiment, the thickness of the second inorganic layer (IL2) is 3000 More than 15,000 It may be less than or equal to. For example, the thickness of the second inorganic layer (IL2) is 5000 More than 12,000 It may be less than.
[0173] The second inorganic layer (IL2) has a second refractive index. The second inorganic layer (IL2) may have a refractive index greater than that of the first inorganic layer (IL1). The second refractive index of the second inorganic layer (IL2) may be 1.60 or greater and 1.95 or less. The second inorganic layer (IL2) may have a refractive index of 1.60 or greater and 1.95 or less for light in the wavelength range of 400 nm to 700 nm. For example, the second refractive index of the second inorganic layer (IL2) may be 1.77.
[0174] The first inorganic layer (IL1) may not overlap the hole region (HA) and may overlap at least a portion of the display region (AA). The second inorganic layer (IL2) may overlap the hole region (HA) and the display region (AA) in a planar manner. In the first encapsulation portion (P1) of the first inorganic encapsulation layer (IOL1) overlapped in the hole region (HA), the second inorganic layer (IL2) may be directly placed on the display element layer (D-OL). Additionally, in the second encapsulation portion (P2) of the first inorganic encapsulation layer (IOL1) overlapped in the display region (AA), the first inorganic layer (IL1) may be directly placed on the display element layer (D-OL). In the second encapsulation portion (P2), the second inorganic layer (IL2) may be placed on the first inorganic layer (IL1). In the second encapsulation portion (P2), the second inorganic layer (IL2) can be spaced apart from the display element layer (D-OL) with the first inorganic layer (IL1) in between.
[0175] In one embodiment, the thickness of the second inorganic layer (IL2) overlapping the hole region (HA) may be substantially the same as the thickness of the second inorganic layer (IL2) overlapping the display region (AA). That is, the second inorganic layer (IL2) may have the same thickness in the first encapsulation portion (P1) and the second encapsulation portion (P2). The second inorganic layer (IL2) in the first encapsulation portion (P1) and the second inorganic layer (IL2) in the second encapsulation portion (P2) may be formed through the same process. However, the embodiment is not limited thereto, and the thickness of the second inorganic layer (IL2) overlapping the hole region (HA) and the thickness of the second inorganic layer (IL2) overlapping the display region (AA) may be different from each other.
[0176] In a sealing layer (ECL) according to one embodiment, the first inorganic sealing layer (IOL1) may further include a third inorganic layer (IL3) disposed on a second inorganic layer (IL2). The third inorganic layer (IL3) may be disposed directly on the second inorganic layer (IL2).
[0177] The third inorganic layer (IL3) may have a third refractive index smaller than the second refractive index of the second inorganic layer (IL2). The third refractive index of the third inorganic layer (IL3) may be 1.5 or greater and 1.7 or less. The third inorganic layer (IL3) may have a refractive index of 1.5 or greater and 1.7 or less for light in the wavelength range of 400 nm to 700 nm.
[0178] The third inorganic layer (IL3) may include at least one of silicon nitride and silicon oxynitride. For example, the third inorganic layer (IL3) may include silicon oxynitride. In one embodiment, the thickness of the third inorganic layer (IL3) is 300 More than 2000 It may be less than or equal to. For example, the thickness of the third inorganic layer (IL3) is 500 More than 1000 It may be less than.
[0179] In one embodiment, the third inorganic layer (IL3) may overlap at least a portion of the hole region (HA) and the display region (AA). The thickness of the third inorganic layer (IL3) overlapping the hole region (HA) may be substantially the same as the thickness of the third inorganic layer (IL3) overlapping the display region (AA). That is, the third inorganic layer (IL3) may have the same thickness in the first encapsulation portion (P1) and the second encapsulation portion (P2). The third inorganic layer (IL3) in the first encapsulation portion (P1) and the third inorganic layer (IL3) in the second encapsulation portion (P2) may be formed through the same process. However, the embodiment is not limited thereto, and the thickness of the third inorganic layer (IL3) overlapping the hole region (HA) and the thickness of the third inorganic layer (IL3) overlapping the display region (AA) may be different from each other.
[0180] In a packaging layer (ECL) according to one embodiment, the first inorganic packaging layer (IOL1) may further include a fourth inorganic layer (IL4) disposed on a second inorganic layer (IL2). The fourth inorganic layer (IL4) may be disposed on a third inorganic layer (IL3). The fourth inorganic layer (IL4) may be directly disposed on the third inorganic layer (IL3).
[0181] The fourth inorganic layer (IL4) may have a fourth refractive index smaller than the second refractive index of the second inorganic layer (IL2). Additionally, the fourth refractive index of the fourth inorganic layer (IL4) may be smaller than the third refractive index of the third inorganic layer (IL3). The fourth refractive index of the fourth inorganic layer (IL4) may be 1.45 or higher and 1.70 or lower. The fourth inorganic layer (IL4) may have a refractive index of 1.45 or higher and 1.70 or lower for light in the wavelength range of 400 nm to 700 nm.
[0182] The fourth inorganic layer (IL4) may comprise at least one of silicon oxide, silicon nitride, and silicon oxynitride. For example, the fourth inorganic layer (IL4) may comprise silicon oxynitride. In one embodiment, the thickness of the fourth inorganic layer (IL4) is 500 More than 1500 It may be less than.
[0183] In one embodiment, the fourth inorganic layer (IL4) may overlap the hole region (HA) and the display region (AA). The thickness of the fourth inorganic layer (IL4) overlapping the hole region (HA) may be substantially the same as the thickness of the fourth inorganic layer (IL4) overlapping the display region (AA). That is, the fourth inorganic layer (IL4) may have the same thickness in the first encapsulation portion (P1) and the second encapsulation portion (P2). The fourth inorganic layer (IL4) in the first encapsulation portion (P1) and the fourth inorganic layer (IL4) in the second encapsulation portion (P2) may be formed through the same process. However, the embodiment is not limited thereto, and the thickness of the fourth inorganic layer (IL4) overlapping the hole region (HA) and the thickness of the fourth inorganic layer (IL4) overlapping the display region (AA) may be different from each other.
[0184] In one embodiment, the nitrogen content in the fourth inorganic layer (IL4) may be smaller than the nitrogen content in the first and second inorganic layers (IL1, IL2), respectively. Additionally, the nitrogen content in the fourth inorganic layer (IL4) may be smaller than the nitrogen content in the third inorganic layer (IL3). The fourth inorganic layer (IL4) may be a silicon oxynitride film with a relatively high oxygen content. The nitrogen content relative to the total element content present in the fourth inorganic layer (IL4) may be smaller than the nitrogen content relative to the total element content present in the first inorganic layer (IL1). Additionally, the nitrogen content relative to the total element content present in the fourth inorganic layer (IL4) may be smaller than the nitrogen content relative to the total element content present in the second inorganic layer (IL2). Additionally, the nitrogen content relative to the total element content present in the fourth inorganic layer (IL4) may be smaller than the nitrogen content relative to the total element content present in the third inorganic layer (IL3).
[0185] In one embodiment, each of the first to fourth inorganic layers (IL1, IL2, IL3, IL4) comprises silicon oxynitride, and the nitrogen content in the fourth inorganic layer (IL4) may be smaller than the nitrogen content in each of the first to third inorganic layers (IL1, IL2, IL3).
[0186] The fourth inorganic layer (IL4) may be a layer disposed adjacent to the organic encapsulation layer (OL) and on the uppermost part of the first inorganic encapsulation layer (IOL1). The upper surface of the fourth inorganic layer (IL4) may be in contact with the organic encapsulation layer (OL). The fourth inorganic layer (IL4) has a relatively low concentration of nitrogen atoms, so that membrane degradation can be prevented under high temperature and high humidity conditions.
[0187] Referring to FIG. 11 and FIG. 12a, the thickness (T2) of the second encapsulation portion (P2) in the first inorganic encapsulation layer (IOL1) may be greater than the thickness (T1) of the first encapsulation portion (P1). That is, the thickness (T2) of the first inorganic encapsulation layer (IOL1) overlapping the display area (AA) may be greater than the thickness (T1) of the first inorganic encapsulation layer (IOL1) overlapping the hole area (HA). As the first inorganic layer (IL1) is not placed in the first encapsulation portion (P1), the thickness (T1) of the first encapsulation portion (P1) may be smaller than the thickness (T2) of the second encapsulation portion (P2).
[0188] The encapsulation layer (ECL) may include an organic encapsulation layer (OL) disposed on a first inorganic encapsulation layer (IOL1). The organic encapsulation layer (OL) may be disposed on a first encapsulation portion (P1) and a second encapsulation portion (P2) of the first inorganic encapsulation layer (IOL1). The organic encapsulation layer (OL) may include an acrylic compound, an epoxy compound, etc. The organic encapsulation layer (OL) may include a photopolymerizable organic material and is not particularly limited.
[0189] The encapsulation layer (ECL) may further include a second inorganic encapsulation layer (IOL2) disposed on the organic encapsulation layer (OL). The second inorganic encapsulation layer (IOL2) may be a single layer or a plurality of layers stacked. The second inorganic encapsulation layer (IOL2) may include silicon nitride, silicon oxynitride, silicon oxide, titanium oxide, or aluminum oxide, but is not particularly limited thereto.
[0190] The display module (DM) shown in FIG. 12b differs from the display module (DM) shown in FIG. 12a in that the first inorganic encapsulation layer (IOL1) further includes a fifth inorganic layer (IL5).
[0191] Referring to FIGS. 8, FIGS. 11 and FIGS. 12b, in a sealing layer (ECL) according to one embodiment, the first inorganic sealing layer (IOL1) may further include a fifth inorganic layer (IL5) disposed between the first inorganic layer (IL1) and the second inorganic layer (IL2). The fifth inorganic layer (IL5) may be disposed directly on the first inorganic layer (IL1). The second inorganic layer (IL2) may be disposed directly on the fifth inorganic layer (IL5).
[0192] The fifth inorganic layer (IL5) has a fifth refractive index. The fifth refractive index of the fifth inorganic layer (IL5) may be greater than the first refractive index of the first inorganic layer (IL1) and the second refractive index of the first inorganic layer (IL2), respectively. Additionally, the fifth refractive index may be greater than the third refractive index of the third inorganic layer (IL3). Additionally, the fifth refractive index may be greater than the fourth refractive index of the fourth inorganic layer (IL4). In one embodiment, the fifth refractive index of the fifth inorganic layer (IL5) may be 1.80 or greater and 1.95 or less. The fifth inorganic layer (IL5) may have a refractive index of 1.80 or greater and 1.95 or less for light in the wavelength range of 400 nm to 700 nm.
[0193] The fifth inorganic layer (IL5) may include at least one of silicon nitride and silicon oxynitride. For example, the fifth inorganic layer (IL5) may include silicon nitride. In one embodiment, the thickness of the fifth inorganic layer (IL5) is 500 More than 2000 It may be less than or equal to. For example, the thickness of the fifth inorganic layer (IL5) is 1000 More than 1500 It may be less than.
[0194] In one embodiment, the fifth inorganic layer (IL5) may not overlap the hole region (HA) and may overlap at least a portion of the display region (AA). The fifth inorganic layer (IL5) may overlap the hole region (HA) and the display region (AA) in a planar manner. That is, in the first inorganic encapsulation layer (IOL1), the fifth inorganic layer (IL5) may not be placed in the first encapsulation portion (P1) and may be placed in the second encapsulation portion (P2). Referring to FIG. 11 and FIG. 12b, the first encapsulation portion (P1) may include a second inorganic layer (IL2), a third inorganic layer (IL3), and a fourth inorganic layer (IL4) arranged sequentially in the third direction (DR3) which is the thickness direction, and the second encapsulation portion (P2) may include a first inorganic layer (IL1), a fifth inorganic layer (IL5), a second inorganic layer (IL2), a third inorganic layer (IL3), and a fourth inorganic layer (IL4) arranged sequentially in the third direction (DR3) which is the thickness direction.
[0195] Referring to FIGS. 11 and 12b, the thickness (T) of the second encapsulation portion (P2-1) in the first inorganic encapsulation layer (IOL1) 2-1 ) may be greater than the thickness (T1) of the first encapsulation portion (P1). That is, the thickness of the first inorganic encapsulation layer (IOL1) overlapping the display area (AA) may be greater than the thickness of the first inorganic encapsulation layer (IOL1) overlapping the hole area (HA). As the first inorganic layer (IL1) and the fifth inorganic layer (IL5) are not placed in the first encapsulation portion (P1), the thickness (T1) of the first encapsulation portion (P1) is greater than the thickness (T) of the second encapsulation portion (P2-1). 2-1 It can be smaller than )
[0196] FIG. 13 is an enlarged cross-sectional view of a portion corresponding to the hole region (HA) in a cross-section of a display module (DM) according to one embodiment of the present invention. FIG. 13 briefly illustrates only the configuration of the display element layer (D-OL) and the encapsulation layer (ECL) of the display module (DM).
[0197] Compared to the display module (DM) illustrated in FIG. 11, the display module (DM) illustrated in FIG. 13 differs in that the first encapsulation portion (P1-1) of the first inorganic encapsulation layer (IOL1) does not include the third inorganic layer (IL3). In the display module (DM) illustrated in FIG. 13, the first encapsulation portion (P1-1) of the first inorganic encapsulation layer (IOL1) may include the aforementioned second inorganic layer (IL2) and fourth inorganic layer (IL4), and may not include the first inorganic layer (IL1) and the third inorganic layer (IL3).
[0198] Referring to FIGS. 8, FIGS. 12a, and FIGS. 13, a display module (DM) of one embodiment includes a display element layer (D-OL) and an encapsulation layer (ECL) disposed on the display element layer (D-OL). The encapsulation layer (ECL) may include a first inorganic encapsulation layer (IOL1) disposed on the display element layer (D-OL), an organic encapsulation layer (OL) disposed on the first inorganic encapsulation layer (IOL1), and a second inorganic encapsulation layer (IOL2) disposed on the organic encapsulation layer (OL). In the display module (DM) of one embodiment, the first inorganic encapsulation layer (IOL1) may include a first encapsulation portion (P1-1) having a stacked structure as shown in FIG. 13 and a second encapsulation portion (P2) having a stacked structure as shown in FIG. 12a. The first encapsulation portion (P1-1) may overlap with a hole region (HA), and the second encapsulation portion (P2) may overlap with a display region (AA).
[0199] Referring to FIGS. 8, FIGS. 12a, and FIGS. 13, the first inorganic encapsulation layer (IOL1) may include a first encapsulation portion (P1-1) overlapping a hole region (HA) and a second encapsulation portion (P2) overlapping a display region (AA). The first encapsulation portion (P1-1) of the first inorganic encapsulation layer (IOL1) may include a second inorganic layer (IL2) and a fourth inorganic layer (IL4) sequentially stacked along a third direction (DR3), and the second encapsulation portion (P2) of the first inorganic encapsulation layer (IOL1) may include a first inorganic layer (IL1), a second inorganic layer (IL2), a third inorganic layer (IL3), and a fourth inorganic layer (IL4) sequentially stacked along a third direction (DR3). The first encapsulation portion (P1-1) may not include the first inorganic layer (IL1) and the third inorganic layer (IL3). In the first encapsulation portion (P1-1), the second inorganic layer (IL2) is placed directly on the display element layer (D-OL), and the fourth inorganic layer (IL4) can be placed directly on the second inorganic layer (IL2).
[0200] Referring to FIG. 12a and FIG. 13, the thickness (T2) of the second encapsulation portion (P2) in the first inorganic encapsulation layer (IOL1) is the thickness (T) of the first encapsulation portion (P1-1). 1-1 It can be larger than ). As the first inorganic layer (IL1) and the third inorganic layer (IL3) are not placed in the first encapsulation portion (P1-1), the thickness (T) of the first encapsulation portion (P1-1) 1-1 ) may be smaller than the thickness (T2) of the second bag portion (P2).
[0201] Referring to FIG. 8, FIG. 12b, and FIG. 13, in a display module (DM) of one embodiment, a first inorganic encapsulation layer (IOL1) may include a first encapsulation portion (P1-1) having a stacked structure as shown in FIG. 13 and a second encapsulation portion (P2-1) having a stacked structure as shown in FIG. 12b. The first encapsulation portion (P1-1) may overlap with a hole region (HA), and the second encapsulation portion (P2-1) may overlap with a display region (AA).
[0202] Referring to FIGS. 8, FIGS. 12b, and FIGS. 13, the first inorganic encapsulation layer (IOL1) may include a first encapsulation portion (P1-1) overlapping a hole region (HA) and a second encapsulation portion (P2-1) overlapping a display region (AA). The first encapsulation portion (P1-1) of the first inorganic encapsulation layer (IOL1) may include a second inorganic layer (IL2) and a fourth inorganic layer (IL4) sequentially stacked along a third direction (DR3), and the second encapsulation portion (P2-1) of the first inorganic encapsulation layer (IOL1) may include a first inorganic layer (IL1), a fifth inorganic layer (IL5), a second inorganic layer (IL2), a third inorganic layer (IL3), and a fourth inorganic layer (IL4) sequentially stacked along a third direction (DR3). The first encapsulation portion (P1-1) may not include the first inorganic layer (IL1), the third inorganic layer (IL3), and the fifth inorganic layer (IL5). In the first encapsulation portion (P1-1), the second inorganic layer (IL2) may be placed directly on the display element layer (D-OL), and the fourth inorganic layer (IL4) may be placed directly on the second inorganic layer (IL2).
[0203] Referring to FIG. 12b and FIG. 13, the thickness (T) of the second encapsulation portion (P2-1) in the first inorganic encapsulation layer (IOL1) 2-1 ) is the thickness (T) of the first bag portion (P1-1). 1-1 It can be larger than ). As the first inorganic layer (IL1), the third inorganic layer (IL3), and the fifth inorganic layer (IL5) are not placed in the first encapsulation portion (P1-1), the thickness (T) of the first encapsulation portion (P1-1) 1-1 ) is the thickness (T) of the second bag portion (P2-1). 2-1 It can be smaller than )
[0204] FIGS. 14a and FIGS. 14b are each enlarged cross-sectional views of a portion corresponding to the display area (AA) in a cross-section of a display module (DM) according to an embodiment of the present invention. FIGS. 14a and FIGS. 14b briefly illustrate only the configuration of the display element layer (D-OL) and the encapsulation layer (ECL) of the display module (DM).
[0205] The display module (DM) illustrated in FIG. 14a differs from the display module (DM) illustrated in FIG. 12a in that the second encapsulation portion (P2-2) does not include the third inorganic layer (IL3). In the display module (DM) illustrated in FIG. 14a, the second encapsulation portion (P2-2) of the first inorganic encapsulation layer (IOL1) may include the first inorganic layer (IL1), the second inorganic layer (IL2), and the fourth inorganic layer (IL4), and may not include the third inorganic layer (IL3).
[0206] Referring together to FIG. 8, FIG. 13, and FIG. 14a, in a display module (DM) of one embodiment, a first inorganic encapsulation layer (IOL1) may include a first encapsulation portion (P1-1) having a stacked structure shown in FIG. 13 and a second encapsulation portion (P2-2) having a stacked structure shown in FIG. 14a. The first encapsulation portion (P1-1) may overlap with a hole region (HA), and the second encapsulation portion (P2-2) may overlap with a display region (AA). That is, in the first inorganic encapsulation layer (IOL1), the first encapsulation portion (P1-1) may include a second inorganic layer (IL2) and a fourth inorganic layer (IL4) sequentially stacked along the third direction (DR3), and the second encapsulation portion (P2-2) may include a first inorganic layer (IL1), a second inorganic layer (IL2), and a fourth inorganic layer (IL4) sequentially stacked along the third direction (DR3). In the second encapsulation portion (P2-2), the first inorganic layer (IL1) may be directly disposed on the display element layer (D-OL), the second inorganic layer (IL2) may be directly disposed on the first inorganic layer (IL2), and the fourth inorganic layer (IL4) may be directly disposed on the second inorganic layer (IL2).
[0207] Referring to FIGS. 13 and 14a, the thickness (T) of the second encapsulation portion (P2-2) in the first inorganic encapsulation layer (IOL1) 2-2 ) is the thickness (T) of the first bag portion (P1-1). 1-1It can be larger than ). As the first inorganic layer (IL1) is not placed in the first encapsulation portion (P1-1), the thickness (T) of the first encapsulation portion (P1-1) 1-1 ) is the thickness (T) of the second bag portion (P2-2) 2-2 It can be smaller than )
[0208] The display module (DM) illustrated in FIG. 14b differs from the display module (DM) illustrated in FIG. 12b in that the second encapsulation portion (P2-3) does not include the third inorganic layer (IL3). In the display module (DM) illustrated in FIG. 14b, the second encapsulation portion (P2-3) of the first inorganic encapsulation layer (IOL1) may include the first inorganic layer (IL1), the fifth inorganic layer (IL5), the second inorganic layer (IL2), and the fourth inorganic layer (IL4), and may not include the third inorganic layer (IL3).
[0209] Referring together to FIG. 8, FIG. 13, and FIG. 14b, in a display module (DM) of one embodiment, a first inorganic encapsulation layer (IOL1) may include a first encapsulation portion (P1-1) having a stacked structure shown in FIG. 13 and a second encapsulation portion (P2-3) having a stacked structure shown in FIG. 14b. The first encapsulation portion (P1-1) may overlap with a hole region (HA), and the second encapsulation portion (P2-3) may overlap with a display region (AA). That is, in the first inorganic encapsulation layer (IOL1), the first encapsulation portion (P1-1) may include a second inorganic layer (IL2) and a fourth inorganic layer (IL4) sequentially stacked along the third direction (DR3), and the second encapsulation portion (P2-3) may include a first inorganic layer (IL1), a fifth inorganic layer (IL5), a second inorganic layer (IL2), and a fourth inorganic layer (IL4) sequentially stacked along the third direction (DR3). In the second encapsulation portion (P2-3), the first inorganic layer (IL1) may be directly disposed on the display element layer (D-OL), the fifth inorganic layer (IL5) may be directly disposed on the first inorganic layer (IL1), the second inorganic layer (IL2) may be directly disposed on the fifth inorganic layer (IL5), and the fourth inorganic layer (IL4) may be directly disposed on the fifth inorganic layer (IL5).
[0210] Referring to FIGS. 13 and 14b, the thickness (T) of the second encapsulation portion (P2-3) in the first inorganic encapsulation layer (IOL1) 2-3 ) is the thickness (T) of the first bag portion (P1-1). 1-1 It can be larger than ). As the first inorganic layer (IL1) and the fifth inorganic layer (IL5) are not placed in the first encapsulation portion (P1-1), the thickness (T) of the first encapsulation portion (P1-1) 1-1 ) is the thickness (T) of the second bag portion (P2-4). 2-4 It can be smaller than )
[0211] An electronic device of one embodiment can implement a reliable encapsulation layer that has strong resistance to moisture while maintaining excellent optical properties in a display area by not placing a lower inorganic layer (IL1) with a low refractive index in a hole region including a module hole. The encapsulation layer (ECL) of one embodiment can exhibit excellent optical properties by including a plurality of inorganic layers having different refractive indices in the first inorganic encapsulation layer.
[0212] FIG. 15a is a graph showing the dispersion of the White Angle Difference (WAD) by angle, measured according to the viewing angle (0 degrees, 30 degrees, 45 degrees, 60 degrees) of a display module (DM) having the stacked structure of FIG. 11, and FIG. 15b is a graph showing the dispersion of the White Angle Difference by angle, measured according to the viewing angle (0 degrees, 30 degrees, 45 degrees, 60 degrees) of a display module (DM) having the stacked structure of FIG. 12a. Hereinafter, the display module (DM) having the stacked structure of FIG. 11 is referred to as the first display module, and the display module (DM) having the stacked structure of FIG. 12a is referred to as the second display module.
[0213] Referring to FIGS. 15a and 15b, it can be seen that the angle-wise WAD dispersion measured in the second display module having the stacked structure of FIG. 12a is reduced compared to the angle-wise WAD dispersion measured in the first display module having the stacked structure of FIG. 11. The change in color coordinates measured at 0, 30, 45, and 60 degrees of the second display module is not large compared to the first display module, and in particular, it can be seen that the change in color coordinates is not large because the WAD trajectory at 60 degrees bends and a turn-back trajectory is formed.
[0214] Table 1 shows the measured current efficiencies for the first and second display modules. In Table 1, the current efficiency is 1000 nit (cd / m²). 2 It was measured at the luminance of ).
[0215] division Current efficiency (cd / A) 1st display module 95.5 2nd display module 101.9
[0216] Referring to the results in Table 1 and Figures 15a and 15b above, it can be seen that in the case of a second display module in which a first inorganic film with a relatively low refractive index is placed at the bottom of the first inorganic encapsulation film, the WAD dispersion according to the viewing angle is reduced and current efficiency is increased compared to a first display module that does not include the first inorganic film. An electronic device of one embodiment can exhibit excellent light-effect characteristics by applying the stacked structure of the second display module described above in the display area. That is, by placing a first inorganic layer with a relatively low refractive index at the bottom of the first inorganic encapsulation layer in the encapsulation layer, the electronic device of one embodiment can exhibit excellent efficiency while simultaneously minimizing changes in visual perception according to the viewing angle for the user. In addition, an electronic device of one embodiment can implement an encapsulation layer with strong resistance to moisture permeability by applying the stacked structure of the first display module in the hole area including the module hole. The first inorganic layer (IL1) may be a layer with a lower refractive index than the second inorganic layer (IL2). The first inorganic layer (IL1) is placed below the second inorganic layer (IL2) and may be a layer with a lower refractive index than the second inorganic layer (IL2). The first inorganic layer (IL2) and the second inorganic layer (IL2) may have different refractive indices due to a difference in density. The refractive index of the first inorganic layer (IL1), which has a relatively lower density, may be lower than the refractive index of the second inorganic layer (IL2), which has a higher density. The first inorganic layer (IL1), which has a lower density, may have a relatively high moisture permeability in the first inorganic encapsulation layer comprising the aforementioned plurality of inorganic layers. Accordingly, in a structure such as the second display module, moisture permeation may proceed through the first inorganic layer (IL1), which has a relatively high moisture permeability, and consequently, the moisture permeability reliability of the encapsulation layer may be relatively low. On the other hand, in a structure such as the first display module, moisture permeation is difficult through the second inorganic layer (IL2), which has a higher density, so the moisture permeability reliability of the encapsulation layer may be robust compared to the second display module.
[0217] The electronic device of the present invention can implement a reliability-enhanced encapsulation layer that has strong resistance to moisture permeability while maintaining excellent optical properties in the display area by applying a second display module structure with excellent optical properties in the display area where optical properties are important, and applying a first display module structure in the hole area including the module hole, which is an area where reliability is weak. That is, the electronic device of one embodiment can implement a reliability-enhanced encapsulation layer that has strong resistance to moisture permeability while maintaining excellent optical properties in the display area by not placing a lower inorganic layer with a low refractive index in the hole area including the module hole.
[0218] Although the present invention has been described above with reference to preferred embodiments, those skilled in the art or those with ordinary knowledge in the relevant technical field will understand that various modifications and changes can be made to the invention without departing from the spirit and technical scope of the invention as set forth in the claims below. Accordingly, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be determined by the claims. Explanation of the symbols
[0219] ED: Electronic device DM: Display Module BS: Base layer D-CL: Circuit layer D-OL: Display layer ECL: Encapsulation layer IOL1: First inorganic bag layer OL: Organic encapsulation layer IOL2: Second inorganic bag layer P1: Part 1 of the bag P2: Part 2 of the bag IL1: 1st Inorganic Layer IL2: Second Weapon Layer IL3: Third Weapon Layer IL4: 4th Weapon Layer IL5: 5th Weapon Layer
Claims
Claim 1 An electronic device comprising: an electronic module; and a display module comprising a hole region including a hole defined by overlapping with the electronic module and a display region surrounding the hole region; wherein the display module comprises: a base layer; a circuit layer disposed on the base layer; a display element layer disposed on the circuit layer and including a light-emitting element; and an encapsulation layer comprising a first inorganic encapsulation layer disposed on the display element layer and an organic encapsulation layer disposed on the first inorganic encapsulation layer; wherein the first inorganic encapsulation layer comprises a first inorganic layer disposed on the display element layer and having a first refractive index; and a second inorganic layer disposed on the first inorganic layer and having a second refractive index greater than the first refractive index; wherein, in a planar manner, the first inorganic layer overlaps with at least a portion of the display region and does not overlap with the hole region. Claim 2 An electronic device according to claim 1, wherein each of the first inorganic layer and the second inorganic layer comprises at least one of silicon oxynitride and silicon nitride. Claim 3 An electronic device according to claim 1, wherein the second inorganic layer on the plane overlaps the hole region and the display region. Claim 4 An electronic device according to claim 1, wherein the thickness of the second inorganic layer is greater than the thickness of the first inorganic layer. Claim 5 An electronic device according to claim 1, wherein the first inorganic encapsulation layer is disposed on the second inorganic layer and further comprises a third inorganic layer having a third refractive index, and the third refractive index is smaller than the second refractive index. Claim 6 In claim 5, the third inorganic layer comprises silicon oxynitride in an electronic device. Claim 7 In paragraph 5, the electronic device in which the third inorganic layer on the above plane overlaps the hole region and the display region. Claim 8 An electronic device according to claim 5, wherein the third inorganic layer on the plane overlaps at least a portion of the display area and does not overlap the hole area. Claim 9 An electronic device according to claim 1, wherein the first inorganic encapsulation layer is disposed on the second inorganic layer and further comprises a fourth inorganic layer comprising silicon oxynitride, and the nitrogen content in the fourth inorganic layer is smaller than the nitrogen content in each of the first and second inorganic layers. Claim 10 In claim 9, the above-mentioned fourth inorganic layer is an electronic device having a fourth refractive index smaller than the second refractive index. Claim 11 In claim 9, the electronic device in which the fourth inorganic layer overlaps the hole region and the display region on a plane. Claim 12 An electronic device according to claim 1, wherein the first inorganic encapsulation layer is disposed between the first inorganic layer and the second inorganic layer and further comprises a fifth inorganic layer having a fifth refractive index, wherein the fifth inorganic layer comprises silicon nitride, and the fifth refractive index is greater than the first refractive index and the second refractive index, respectively. Claim 13 An electronic device according to claim 1, wherein the first inorganic encapsulation layer comprises a first encapsulation portion overlapping the hole area; and a second encapsulation portion overlapping the display area; and wherein the thickness of the second encapsulation portion is greater than the thickness of the first encapsulation portion. Claim 14 An electronic device according to claim 13, wherein the second inorganic layer is directly disposed on the display element layer in the first encapsulation portion, and the first inorganic layer is directly disposed on the display element layer in the second encapsulation portion. Claim 15 An electronic device according to claim 1, wherein the thickness of the second inorganic layer overlapping the hole area is substantially the same as the thickness of the second inorganic layer overlapping the display area. Claim 16 An electronic device according to claim 1, wherein the encapsulation layer further comprises a second inorganic encapsulation layer disposed on an organic encapsulation layer, and the second inorganic encapsulation layer comprises at least one of silicon nitride, silicon oxide, and silicon oxynitride. Claim 17 In claim 1, the above-mentioned encapsulation layer is an electronic device that covers the light-emitting element. Claim 18 An electronic device according to claim 1, wherein the light-emitting element comprises a first electrode, a second electrode disposed on the first electrode, and a light-emitting layer disposed between the first electrode and the second electrode. Claim 19 In claim 18, the light-emitting element further comprises a capping layer disposed on the second electrode. Claim 20 An electronic device comprising: an electronic module; and a display module comprising a hole region including a hole defined in overlap with the electronic module and a display region surrounding the hole region; wherein the display module comprises a base layer; a circuit layer disposed on the base layer; a display element layer disposed on the circuit layer and including a light-emitting element; and an encapsulation layer comprising a first inorganic encapsulation layer disposed on the display element layer and an organic encapsulation layer disposed on the first inorganic encapsulation layer; wherein the first inorganic encapsulation layer comprises a first inorganic layer having a first refractive index; and a second inorganic layer having a second refractive index greater than the first refractive index; wherein the first inorganic encapsulation layer comprises a first encapsulation portion that overlaps the hole region and includes the second inorganic layer; and a second encapsulation portion that overlaps the display region and includes the first inorganic layer and the second inorganic layer; and wherein the second inorganic layer in the first encapsulation portion is directly disposed on the display element layer.
