Powder atomic layer deposition equipment using mixing blade

Abstract

An atomic layer deposition apparatus according to an embodiment of the present invention comprises: a chamber providing a space for performing an atomic layer deposition process to form a material film on the surface of a deposited object; a center rod disposed inside the chamber; a driving motor that rotates the center rod in a clockwise or counterclockwise direction with the direction in which the center rod extends as an axis; a mixing blade that wraps around the outer surface of the center rod in a spiral shape along the direction in which the center rod extends; and a spray rod that extends in a direction perpendicular to the direction in which the center rod extends, is coupled to the outer surface of the center rod, and sprays a process gas to form the material film, wherein the deposited object supplied into the chamber moves from the lower part of the center rod to the upper part along the mixing blade by the rotation of the center rod, and the deposited object moved to the upper part separates from the mixing blade, moves to the lower part of the center rod, and then moves again to the upper part of the center rod along the mixing blade.

Description

Technology Field

[0001] The present invention relates to a powder atomic layer deposition apparatus. Background Technology

[0002] Atomic layer deposition (ALD) is divided into time-division deposition and space-division deposition.

[0003] Among these, time-division atomic layer deposition generally forms a thin film on the surface of a substrate inside the reaction chamber by sequentially supplying precursor gas, purge gas, and reactant gas into the reaction chamber.

[0004] Atomic layer deposition has the advantage of enabling thickness control in the range of angstroms (0.1 nm) and excellent step coverage, allowing for the growth of uniform thin films even on substrates with relatively complex shapes, such as powders. The efficiency of such time-division atomic layer deposition could generally be evaluated by the time required to complete the deposition process.

[0005] Meanwhile, when nanopowder materials are deposited based on atomic layer deposition, the powders may form aggregates due to liquid bridges or solid bridges that occur between small particles.

[0006] In these aggregated nanopowder materials, there were areas that did not come into contact with gas, resulting in un-deposited regions on the surface, or there were cases where some nanopowder materials were deposited while others were not. The problem to be solved

[0007] The technical problem that the present invention aims to solve is to provide an atomic layer deposition apparatus capable of preventing powder aggregation.

[0008] Another technical problem that the present invention aims to solve is to provide an atomic layer deposition apparatus capable of improving the process efficiency of atomic layer deposition on powder.

[0009] Another technical problem that the present invention aims to solve is to provide an atomic layer deposition apparatus capable of improving the reliability of the atomic layer deposition process for powder.

[0010] The technical problems that the present invention aims to solve are not limited to those described above. means of solving the problem

[0011] To solve the above technical problems, the present invention provides an atomic layer deposition apparatus.

[0012] According to one embodiment, the atomic layer deposition apparatus comprises a chamber providing a space for performing an atomic layer deposition process to form a material film on the surface of a deposited object, a center rod disposed inside the chamber, a driving motor that rotates the center rod clockwise or counterclockwise with the direction in which the center rod extends as an axis, a mixing blade that wraps around the outer surface of the center rod in a spiral shape along the direction in which the center rod extends, and a spray rod that extends in a direction perpendicular to the direction in which the center rod extends, is coupled to the outer surface of the center rod, and sprays a process gas to form the material film, wherein the deposited object supplied into the chamber moves from the lower part of the center rod to the upper part along the mixing blade by the rotation of the center rod, and the deposited object moved to the upper part separates from the mixing blade, moves to the lower part of the center rod, and then moves again to the upper part of the center rod along the mixing blade.

[0013] According to one embodiment, the injection rod comprises a first injection rod, a second injection rod, and a third injection rod, wherein the first to third injection rods are positioned at different locations along the direction in which the center rod extends, and the first to third injection rods may inject different types of process gases.

[0014] According to one embodiment, the process gas comprises a precursor gas that reacts with the surface of the deposited material, a reaction gas that reacts with the surface of the deposited material after reacting with the precursor gas, and a purge gas, wherein the first injection rod is positioned above the center rod, the third injection rod is positioned below the center rod, and the second injection rod is positioned between the first injection rod and the third injection rod, wherein the precursor gas is injected through either the first injection rod or the second injection rod, the reaction gas is injected through either the first injection rod or the second injection rod, and the purge gas is injected through the third injection rod.

[0015] According to one embodiment, the chamber may include a funnel shape in which the diameter decreases from the top to the bottom.

[0016] According to one embodiment, the atomic layer deposition apparatus may further include a vacuum pump that creates a vacuum inside the chamber. Effects of the invention

[0017] An atomic layer deposition apparatus according to an embodiment of the present invention comprises: a chamber providing a space for performing an atomic layer deposition process to form a material film on the surface of a deposited object; a center rod disposed inside the chamber; a driving motor that rotates the center rod in a clockwise or counterclockwise direction with the direction in which the center rod extends as an axis; a mixing blade that wraps around the outer surface of the center rod in a spiral shape along the direction in which the center rod extends; and a spray rod that extends in a direction perpendicular to the direction in which the center rod extends, is coupled to the outer surface of the center rod, and sprays a process gas to form the material film, wherein the deposited object supplied into the chamber moves from the lower part of the center rod to the upper part along the mixing blade by the rotation of the center rod, and the deposited object moved to the upper part separates from the mixing blade, moves to the lower part of the center rod, and then moves again to the upper part of the center rod along the mixing blade. Accordingly, aggregation of the deposited material can be easily prevented during the atomic layer deposition process, thereby enabling the growth of a uniform material film on the deposited material. Brief explanation of the drawing

[0018] FIG. 1 is a combined perspective view of an atomic layer deposition apparatus according to an embodiment of the present invention. FIG. 2 is a cross-sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention. FIG. 3 is an exploded perspective view of an atomic layer deposition apparatus according to an embodiment of the present invention. FIG. 4 is a drawing for explaining the chamber and head cap included in an atomic layer deposition apparatus according to an embodiment of the present invention. FIG. 5 is a drawing for explaining a deposit supply module, first to third process gas supply modules, and a vacuum pump included in an atomic layer deposition apparatus according to an embodiment of the present invention. FIGS. 6 and 7 are drawings for explaining a center rod, a mixing blade, and a spray rod included in an atomic layer deposition apparatus according to an embodiment of the present invention. FIG. 8 is a drawing for explaining the positions of a first fastening module and a second fastening module included in an atomic layer deposition apparatus according to an embodiment of the present invention. FIG. 9 is a drawing for specifically explaining a first fastening module included in an atomic layer deposition apparatus according to an embodiment of the present invention. FIGS. 10 and FIGS. 11 are drawings for specifically describing a second fastening module included in an atomic layer deposition apparatus according to an embodiment of the present invention. FIGS. 12 to 14 are drawings for explaining the movement process of the first to third process gases within an atomic layer deposition apparatus according to an embodiment of the present invention. FIG. 15 is a diagram illustrating the operation of an atomic layer deposition apparatus according to an embodiment of the present invention. Specific details for implementing the invention

[0019] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. However, the technical concept of the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided to ensure that the disclosed content is thorough and complete, and to ensure that the concept of the present invention is sufficiently conveyed to those skilled in the art.

[0020] In this specification, when a component is described as being on another component, it means that it may be formed directly on the other component or that a third component may be interposed between them. Additionally, in the drawings, the thicknesses of the films and regions are exaggerated for the effective description of the technical content.

[0021] Additionally, although terms such as first, second, third, etc. have been used to describe various components in various embodiments of this specification, these components should not be limited by such terms. Accordingly, what is referred to as the first component in one embodiment may be referred to as the second component in another embodiment.

[0022] Each embodiment described and exemplified herein also includes its complementary embodiment. Additionally, the term 'and / or' in this specification is used to mean including at least one of the components listed before and after it.

[0023] In the specification, singular expressions include plural expressions unless the context clearly indicates otherwise. Furthermore, terms such as "include" or "have" are intended to specify the existence of the features, numbers, steps, components, or combinations thereof described in the specification, and should not be understood as excluding the existence or addition of one or more other features, numbers, steps, components, or combinations thereof.

[0024] In addition, in describing the present invention below, if it is determined that a detailed description of related known functions or configurations could unnecessarily obscure the essence of the invention, such detailed description will be omitted.

[0025] In addition, in the following description of the present invention, 'substrate' refers to a material to be deposited. For example, the substrate may be a material in powder form.

[0026] Furthermore, in describing the present invention below, the 'precursor gas' is a gas that reacts with the surface of the deposit. Additionally, the 'reaction gas' may be a gas that reacts with the surface of the deposit after reacting with the precursor gas. Additionally, the 'purge gas' may be a gas that does not react with the deposit, the precursor gas, and the reaction gas. For example, an inert gas such as nitrogen (N2), argon (Ar), or helium (He) gas may be supplied as the purge gas.

[0027] In addition, in the following description of the present invention, 'process gas' refers to a gas that can be used in the deposition process of a deposited material. For example, the process gas may refer to the aforementioned precursor gas, reaction gas, and / or purge gas.

[0029] FIG. 1 is an assembled perspective view of an atomic layer deposition apparatus according to an embodiment of the present invention, FIG. 2 is a cross-sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention, and FIG. 3 is an exploded perspective view of an atomic layer deposition apparatus according to an embodiment of the present invention.

[0030] Referring to FIGS. 1 to 3, an atomic layer deposition apparatus according to an embodiment of the present invention may include a chamber (100), a head cap (200), a driving motor (300), a substrate supply module (400), a first process gas supply module (510), a second process gas supply module (520), a third process gas supply module (530), a vacuum pump (600), a center rod (CR), a mixing blade (MB), and a spray rod (SR). Each of these components is described below.

[0031] FIG. 4 is a drawing for explaining a chamber and a head cap included in an atomic layer deposition apparatus according to an embodiment of the present invention, FIG. 5 is a drawing for explaining a deposit supply module, first to third process gas supply modules, and a vacuum pump included in an atomic layer deposition apparatus according to an embodiment of the present invention, and FIG. 6 and FIG. 7 are drawings for explaining a center rod, a mixing blade, and a spray rod included in an atomic layer deposition apparatus according to an embodiment of the present invention.

[0032] Referring to FIGS. 4 to 7, the chamber (100) provides a space in which an atomic layer deposition (ALD) process is performed to form a material film on the surface of a deposit (e.g., powder), and the center rod (CR), the mixing blade (MB), and the spray rod (SR) may be disposed inside the chamber (100).

[0033] According to one embodiment, the chamber (100) may have a funnel shape in which the diameter decreases from the top to the bottom. Accordingly, when a deposition material (PW) is supplied into the chamber (100), the deposition material (PW) may move to the bottom of the chamber (100) along an inclined surface inside the chamber (100). Additionally, according to one embodiment, the chamber (100) may have an open top shape, and the head cap (200) may be attached to the top of the chamber (100).

[0034] The drive motor (300), the deposition material supply module (400), the first to third process gas supply modules (510, 520, 530), and the vacuum pump (600) may be coupled to the head cap (200). More specifically, the drive motor (300), the deposition material supply module (400), the first to third process gas supply modules (510, 520, 530), and the vacuum pump (600) may be coupled to the upper surface of the head cap (200), and the lower surface of the head cap (200) may be coupled to the chamber (100).

[0035] According to one embodiment, a first head cap through hole (200a) and a second head cap through hole (200b) may be formed in the head cap (200) such that they are spaced apart from each other. The first head cap through hole (200a) and the second head cap through hole (200b) may be formed to penetrate the head cap (200) in the thickness direction. Accordingly, when the head cap (200) is coupled with the chamber (100), the internal space of the chamber (100) may be in communication with the outside of the head cap (200) through the first head cap through hole (200a) and the second head cap through hole (200b).

[0036] The first head cap through hole (200a) can be coupled with the substrate supply module (400), and the second head cap through hole (200b) can be coupled with the vacuum pump (600). Accordingly, the substrate (PW) supplied through the substrate supply module (400) can be supplied into the interior of the chamber (100) through the first head cap through hole (200a), and the interior space of the chamber (100) can be pumped through the vacuum pump (600) and the second head cap through hole (200b).

[0037] According to one embodiment, the head cap (200) may further have third to fifth head cap through holes formed so as to be spaced apart from each other, and the third to fifth head cap through holes may each communicate with the first to third inlets (20a, 20b, 20c) of the second fastening module (20) described later. Additionally, the third to fifth head cap through holes may each be coupled with the first to third process gas supply modules (510, 520, 530). Accordingly, the first to third process gases (PG1, PG2, PG3) supplied through the first to third process gas supply modules (510, 520, 530) may be provided into the interior of the center rod (CR).

[0038] That is, the first process gas (PG1) supplied through the first process gas supply module (510) can be supplied to the interior of the center rod (CR) after flowing into the first inlet (20a) of the second fastening module (20) through the third head cap through hole, the second process gas (PG2) supplied through the second process gas supply module (520) can be supplied to the interior of the center rod (CR) after flowing into the second inlet (20b) of the second fastening module (20) through the fourth head cap through hole, and the third process gas (PG3) supplied through the third process gas supply module (530) can be supplied to the interior of the center rod (CR) after flowing into the third inlet (20c) of the second fastening module (20) through the fifth head cap through hole. A more specific description of the path provided from the first to third inlets (20a, 20b, 20c) to the interior of the center rod (CR) will be given later.

[0039] According to one embodiment, the first process gas (PG1) may be a precursor gas. Alternatively, the second process gas (PG2) may be a reaction gas. Alternatively, the third process gas (PG3) may be a purge gas.

[0040] The drive motor (300) can be coupled with a first fastening module (10) described later, and the first fastening module (10) can be coupled with the center rod (CR). Accordingly, the center rod (CR) can be rotated by the drive motor (300). More specifically, the drive motor (300) can rotate the center rod (CR) clockwise or counterclockwise with the direction in which the center rod (CR) extends as an axis.

[0041] The mixing blade (MB) can wrap around the outer surface of the center rod (CR) in a spiral shape along the direction in which the center rod (CR) extends. Additionally, the mixing blade (MB) can be rotated together with the center rod (CR) by the drive motor (300).

[0042] A plurality of injection rods (SR) can be coupled to the center rod (CR), and the plurality of injection rods (SR) can also be rotated together with the center rod (CR) by the drive motor (300).

[0043] According to one embodiment, a first injection rod (SR1), a second injection rod (SR2), a third injection rod (SR3), and a fourth injection rod (SR4) may be coupled to the center rod (CR). Additionally, the first to fourth injection rods (SR1, SR2, SR3, SR4) may be arranged spaced apart from each other along the direction in which the center rod (CR) extends, and may be arranged sequentially from the upper to the lower direction of the center rod (CR). That is, the first injection rod (SR1) may be arranged to be located at the upper position, while the fourth injection rod (SR4) may be arranged to be located at the lower position, and the second and third injection rods (SR2, SR3) may be arranged between the first injection rod (SR1) and the fourth injection rod (SR4).

[0044] According to one embodiment, the first to fourth injection rods (SR1, SR2, SR3, SR4) may all be extended in a direction perpendicular to the direction in which the center rod (CR) extends, and a plurality of injection nozzles may be formed in each of the first to fourth injection rods (SR1, SR2, SR3, SR4). According to one embodiment, the injection nozzles may be formed to face downwards toward the center rod (CR). In contrast, according to another embodiment, the injection nozzles may be formed to face sideways and upwards toward the center rod (CR). That is, the direction in which the injection nozzles may be formed is not limited. Accordingly, the process gas injected through the injection nozzles may be injected not only downwards but also in various directions such as sideways and upwards.

[0045] According to one embodiment, the first to fourth injection rods (SR1, SR2, SR3, SR4) may be connected to any one of the seventh to ninth gas lines (GL7, GL8, GL9) formed inside the center rod (CR). That is, the first injection rod (SR1) may be connected to any one of the seventh to ninth gas lines (GL7, GL8, GL9), the second injection rod (SR2) may also be connected to any one of the seventh to ninth gas lines (GL7, GL8, GL9), the third injection rod (SR3) may also be connected to any one of the seventh to ninth gas lines (GL7, GL8, GL9), and the fourth injection rod (SR4) may also be connected to any one of the seventh to ninth gas lines (GL7, GL8, GL9). Accordingly, the first to third process gases (PG1, PG2, PG3) moving through the seventh to ninth gas lines (GL7, GL8, GL9) can be injected through the first to fourth injection rods (SR1, SR2, SR3, SR4).

[0046] Hereinafter, the movement process of the first to third process gases (PG1, PG2, PG3) is specifically explained through FIGS. 8 to 14.

[0047] FIG. 8 is a drawing for explaining the positions of a first fastening module and a second fastening module included in an atomic layer deposition apparatus according to an embodiment of the present invention, FIG. 9 is a drawing for specifically explaining the first fastening module included in an atomic layer deposition apparatus according to an embodiment of the present invention, FIG. 10 and FIG. 11 are drawings for specifically explaining the second fastening module included in an atomic layer deposition apparatus according to an embodiment of the present invention, and FIG. 12 to 14 are drawings for explaining the movement process of the first to third process gases within an atomic layer deposition apparatus according to an embodiment of the present invention.

[0048] Referring to FIGS. 8 to 11, an atomic layer deposition apparatus according to an embodiment of the present invention may further include a first fastening module (10) and a second fastening module (20).

[0049] The first fastening module (10) has a cylindrical shape extending in one direction and can be inserted into the head cap (200) along the direction of extension. Accordingly, the upper part of the first fastening module (10) is exposed to the outside of the head cap (200), while the lower part of the first fastening module (10) can be located inside the chamber (100). According to one embodiment, the upper part of the first fastening module (10) can be connected to the drive motor (300), and the lower part of the first fastening module (10) can be connected to the center rod (CR). Accordingly, the first fastening module (10) and the center rod (CR) can be rotated by the drive motor (300).

[0050] According to one embodiment, a plurality of grooves (10h1, 10h2, 10h3) may be formed in the lower portion of the first fastening module (10). For example, as shown in FIG. 9, the first groove (10h1), the second groove (10h2), and the third groove (10h3) may be formed spaced apart from each other along the direction in which the first fastening module (10) extends. Additionally, the first to third grooves (10h1, 10h2, 10h3) may all be formed along the outer circumference of the first fastening module (10). That is, the first to third grooves (10h1, 10h2, 10h3) may all have a shape that is recessed from the outer circumference toward the center along the circumference of the outer circumference of the first fastening module (10).

[0051] The second fastening module (20) may be positioned within the chamber (100) and may be positioned to surround the lower part of the first fastening module (10). More specifically, the second fastening module (20) may be positioned to surround the first to third grooves (10h1, 10h2, 10h3) of the first fastening module (10) and may be fixed by being coupled to the lower surface of the head cap (200). Accordingly, unlike the first fastening module (10), the second fastening module (20) may not be rotated by the drive motor (300).

[0052] Referring to FIGS. 10 and 11, the second fastening module (20) may include a second fastening module through hole (20h), a first inlet (20a), a second inlet (20b), a third inlet (20c), a first gas line (GL1), a second gas line (GL2), a third gas line (GL3), a first O-ring (OR1), a second O-ring (OR2), a third O-ring (OR3), and a fourth O-ring (OR4).

[0053] The second fastening module through hole (20h) may be formed to penetrate the second fastening module (20) in the thickness direction from the center of the second fastening module (20). According to one embodiment, the second fastening module through hole (20h) may provide a space into which the first fastening module (10) is inserted. That is, the lower part of the first fastening module (10) may be inserted into the second fastening module (20) through the second fastening module through hole (20h). As a result, the first to third grooves (10h1, 10h2, 10h3) of the first fastening module (10) may be wrapped by the second fastening module (20).

[0054] The first to third inlets (20a, 20b, 20c) may be formed on the upper surface of the second fastening module (20) and spaced apart from each other. According to one embodiment, the second fastening module (20) may be coupled to the head cap (200) through its upper surface. Accordingly, the third to fifth head cap through-holes formed in the head cap (200) may be connected to the first to third inlets (20a, 20b, 20c), respectively. As a result, the first to third process gases (PG1, PG2, PG3) may be introduced into the interior of the second fastening module (20) through the first to third inlets (20a, 20b, 20c).

[0055] The first to third gas lines (GL1, GL2, GL3) are all formed inside the fastening module (20), with one end formed to be in communication with the first to third inlets (20a, 20b, 20c) and the other end formed to be in communication with the second fastening module through hole (20h). That is, one end of the first gas line (GL1) may be in communication with the first inlet (20a) and the other end may be in communication with the second fastening module through hole (20h). Accordingly, the first process gas (PG1) introduced through the first inlet (20a) may be supplied into the second fastening module through hole (20h) through the first gas line (GL1). Additionally, one end of the second gas line (GL2) may be in communication with the second inlet (20b) and the other end may be in communication with the second fastening module through-hole (20h). Accordingly, the second process gas (PG2) introduced through the second inlet (20b) may be supplied into the second fastening module through-hole (20h) through the second gas line (GL2). Additionally, one end of the third gas line (GL3) may be in communication with the third inlet (20c) and the other end may be in communication with the second fastening module through-hole (20h). Accordingly, the third process gas (PG3) introduced through the third inlet (20c) may be supplied into the second fastening module through-hole (20h) through the third gas line (GL3).

[0056] According to one embodiment, a plurality of grooves may be formed within the second fastening module through-hole (20h). More specifically, grooves having a shape that is recessed from the inner wall toward the outer wall may be formed along the inner circumference of the through-hole within the second fastening module through-hole (20h), and may be formed spaced apart along the direction in which the through-hole extends. According to one embodiment, first to fourth O-rings (OR1, OR2, OR3, OR4) may be disposed in each of the plurality of grooves formed within the second fastening module through-hole (20h), and the first to fourth O-rings (OR1, OR2, OR3, OR4) may be disposed so as not to protrude into the inner wall of the through-hole. Accordingly, the first fastening module (10) can be easily inserted into the second fastening module through-hole (20h) even when the first to fourth O-rings (OR1, OR2, OR3, OR4) are disposed.

[0057] Referring to FIGS. 12 to 14, fourth to sixth gas lines (GL4, GL5, GL6) may be formed inside the first fastening module (10). According to one embodiment, one end of the fourth to sixth gas lines (GL4, GL5, GL6) may be in communication with the first to third grooves (10h1, 10h2, 10h3), and the other end may be in communication with the seventh to ninth gas lines (GL7, GL8, GL9) formed inside the center rod (CR). That is, one end of the fourth gas line (GL4) may be in communication with the first groove (10h1), and the other end may be in communication with the seventh gas line (GL7). Additionally, one end of the fifth gas line (GL5) may be in communication with the second groove (10h2), and the other end may be in communication with the eighth gas line (GL8). Additionally, one end of the sixth gas line (GL6) may be in communication with the third groove (10h3) and the other end may be in communication with the ninth gas line (GL9).

[0058] According to one embodiment, the first to third grooves (10h1, 10h2, 10h3) may be in communication with the first to third gas lines (GL1, GL2, GL3) formed within the second fastening module (20). For example, the first groove (10h1) may be connected to the second gas line (GL2), the second groove (10h2) may be connected to the first gas line (GL1), and the third groove (10h3) may be connected to the third gas line (GL3).

[0059] Accordingly, the first process gas (PG1) can be supplied into the interior of the center rod (CR) by sequentially moving through the first process gas supply module (510), the third head cap through hole, the first inlet (20a), the first gas line (GL1), the second groove (10h2), the fifth gas line (GL5), and the eighth gas line (GL8). Additionally, the second process gas (PG2) can be supplied into the interior of the center rod (CR) by sequentially moving through the second process gas supply module (520), the fourth head cap through hole, the second inlet (20b), the second gas line (GL2), the first groove (10h1), the fourth gas line (GL4), and the seventh gas line (GL7). Additionally, the third process gas (PG3) can be supplied into the interior of the center rod (CR) by sequentially moving through the third process gas supply module (530), the fifth head cap through hole, the third inlet (20c), the third gas line (GL3), the third groove (10h3), the sixth gas line (GL6), and the ninth gas line (GL9).

[0060] Referring to FIG. 14, the first to third process gases (PG1, PG2, PG3) supplied into the center rod (CR) can be injected through the first to fourth injection rods (SR1, SR2, SR3, SR4). According to one embodiment, the eighth gas line (GL8) can be connected to the first injection rod (SR1), the seventh gas line (GL7) can be connected to the third injection rod (SR3), and the ninth gas line (GL9) can be connected to the fourth injection rod (SR4). Accordingly, the first process gas (PG1) can be injected through the first injection rod (SR1), the second process gas (PG2) can be injected through the third injection rod (SR3), and the third process gas (PG3) can be injected through the fourth injection rod (SR4). In addition, the connection between the first to fourth injection rods (SR1, SR2, SR3, SR4) and the seventh to ninth gas lines (GL7, GL8, GL9) can be made in various ways. That is, the first to third process gases (PG1, PG2, PG3) can be injected in various ways through the first to fourth injection rods (SR1, SR2, SR3, SR4).

[0061] However, while the first process gas (PG1, e.g., precursor gas) and the second process gas (PG2, e.g., reaction gas) are injected at a relatively high position, the third process gas (PG3, e.g., purge gas) may be injected at a relatively low position compared to the first and second process gases (PG1, PG2). In this case, the purge efficiency may be improved compared to the case where the third process gas (PG3) is injected at a relatively high position compared to the first and second process gases (PG1, PG2).

[0062] The components of the atomic layer deposition apparatus according to the embodiment of the present invention have been described above. The operation of the atomic layer deposition apparatus according to the embodiment of the present invention is described below.

[0063] FIG. 15 is a diagram illustrating the operation of an atomic layer deposition apparatus according to an embodiment of the present invention.

[0064] Referring to FIG. 15, a deposition material (PW) supplied (①) into the chamber (100) can be placed at the bottom of the chamber (100) along the inner wall of the chamber (100) (②). Subsequently, the center rod (CR) and the mixing blade (MB) can be rotated by the drive motor (300), and as a result, the deposition material (PW) placed at the bottom of the chamber (100) can be moved from the bottom to the top of the center rod (CR) along the mixing blade (MB) (③). The deposition material (PW) moved to the end of the mixing blade (MB) located at the top of the center rod (CR) can be detached from the mixing blade (MB) (④) and moved to the bottom of the center rod (CR), and then moved again to the top of the center rod (CR) along the mixing blade (MB). That is, the process described above ②->③->④ can be carried out sequentially and repeatedly. In addition, while the process described above ②->③->④ is carried out sequentially and repeatedly, the first to third process gases (PG1, PG2, PG3) can be supplied through the first to fourth injection rods (SR1, SR2, SR3, SR4). Accordingly, aggregation of the deposited material (PW) can be prevented during the atomic layer deposition process, thereby enabling uniform material film growth on the deposited material.

[0066] Although the present invention has been described in detail using preferred embodiments, the scope of the invention is not limited to specific embodiments and should be interpreted by the appended claims. Furthermore, those skilled in the art will understand that many modifications and variations are possible without departing from the scope of the invention. Explanation of the symbols

[0067] 100: Chamber 200: Head cap 200a, 200b: 1st head cap through hole, 2nd head cap through hole 300: Drive motor 400: Substrate supply module 510, 520, 530: 1st process gas supply module, 2nd process gas supply module, 3rd process gas supply module 600: Vacuum pump 10: First fastening module 10h1, 10h2, 10h3: 1st groove, 2nd groove, 3rd groove 20: Second fastening module 20a, 20b, 20c: First inlet, second inlet, third inlet PW: deposit CR: Center Load MB: Mixing Blade SR: Injection rod SR1, SR2, SR3, SR4: 1st injection rod, 2nd injection rod, 3rd injection rod, 4th injection rod PG1, PG2, PG3: First process gas, second process gas, third process gas OR1, OR2, OR3, OR4: 1st O-ring, 2nd O-ring, 3rd O-ring, 4th O-ring GL1, GL2, GL3, GL4, GL5, GL6, GL7, GL8, GL9: 1st gas line, 2nd gas line, 3rd gas line, 4th gas line, 5th gas line, 6th gas line, 7th gas line, 8th gas line, 9th gas line

Claims

Claim 1 An atomic layer deposition apparatus comprising: a chamber providing a space for performing an atomic layer deposition process to form a material film on the surface of a deposited object; a center rod disposed inside the chamber; a drive motor that rotates the center rod in a clockwise or counterclockwise direction with the direction in which the center rod extends as an axis; a mixing blade that wraps around the outer surface of the center rod in a spiral shape along the direction in which the center rod extends; and a spray rod that extends in a direction perpendicular to the direction in which the center rod extends, is coupled to the outer surface of the center rod, and sprays a process gas to form the material film, wherein the deposited object supplied into the chamber moves from the lower part of the center rod to the upper part along the mixing blade by the rotation of the center rod, and the deposited object moved to the upper part separates from the mixing blade, moves to the lower part of the center rod, and then moves again to the upper part of the center rod along the mixing blade. Claim 2 An atomic layer deposition apparatus according to claim 1, wherein the injection rod comprises a first injection rod, a second injection rod, and a third injection rod, wherein the first to third injection rods are positioned at different locations along the direction in which the center rod extends, and the first to third injection rods inject different types of process gases. Claim 3 An atomic layer deposition apparatus according to claim 2, wherein the process gas comprises a precursor gas that reacts with the surface of a deposited object, a reaction gas that reacts with the surface of the deposited object after reacting with the precursor gas, and a purge gas, wherein the first injection rod is positioned above the center rod, the third injection rod is positioned below the center rod, and the second injection rod is positioned between the first injection rod and the third injection rod, wherein the precursor gas is injected through either the first injection rod or the second injection rod, the reaction gas is injected through either the first injection rod or the second injection rod, and the purge gas is injected through the third injection rod. Claim 4 An atomic layer deposition apparatus according to claim 1, wherein the chamber has a funnel shape in which the diameter decreases from the top to the bottom. Claim 5 An atomic layer deposition apparatus according to claim 1, further comprising a vacuum pump that creates a vacuum inside the chamber.

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