Display device and electronic device including the same

Abstract

A display device and an electronic device including the same are provided. The display device comprises a substrate, a circuit layer disposed on the substrate, a light-emitting element disposed on the circuit layer and emitting a first light having a first wavelength, a light-receiving element sensing a second light having a second wavelength, and a pixel defining film separating the light-emitting element and the light-receiving element, a device layer comprising a light conversion pattern disposed on the device layer and overlapping with the pixel defining film, wherein the light conversion pattern is configured to convert the first light emitted from the light-emitting element into the second light, and the light-receiving element is configured to sense the second light converted by the light conversion pattern.

Description

Technology Field

[0001] The present invention relates to a display device and an electronic device including the same. Background Technology

[0002] As the information society develops, the demand for display devices for displaying images is increasing in various forms. Display devices may be liquid crystal displays, field emission displays, light-emitting displays, etc. Light-emitting displays may include organic light-emitting displays that include organic light-emitting diode elements as light-emitting elements, or inorganic light-emitting displays that include inorganic light-emitting diode elements as light-emitting elements.

[0003] The display device may include various optical devices, such as an image sensor for capturing an image of the front surface, a proximity sensor for detecting whether a user is positioned close to the front surface of the display device, an illuminance sensor for detecting the illuminance of the front surface of the display device, an iris sensor for recognizing the user's iris, and a fingerprint sensor for recognizing the user's fingerprint. These optical devices may be provided separately from the display panel or may be embedded within the display panel. The problem to be solved

[0004] The problem that the present invention aims to solve is to provide a display device having high resolution, comprising a light-emitting element and a light-receiving element, and an electronic device including the same.

[0005] The problems of the present invention are not limited to those mentioned above, and other unmentioned technical problems will be clearly understood by those skilled in the art from the description below. means of solving the problem

[0006] A display device according to one embodiment for solving the above problem comprises a substrate, a circuit layer disposed on the substrate, a light-emitting element disposed on the circuit layer and emitting a first light having a first wavelength, a light-receiving element sensing a second light having a second wavelength, and a pixel defining film separating the light-emitting element and the light-receiving element, a device layer comprising a light conversion pattern disposed on the device layer and overlapping with the pixel defining film, wherein the light conversion pattern is configured to convert the first light emitted from the light-emitting element into the second light, and the light-receiving element is configured to sense the second light converted by the light conversion pattern.

[0007] The above light conversion pattern can be arranged to surround the light-emitting element on a plane.

[0008] At least a portion of the above light conversion pattern may be disposed on a plane between the light-emitting element and the light-receiving element.

[0009] The above light conversion pattern may include an opening that overlaps with the light-emitting element.

[0010] The planar size or area of ​​the above opening may be larger than the size or area of ​​the above light-emitting element.

[0011] The device further includes a color filter disposed on the light conversion layer and transmitting the first light, wherein a first portion, which is at least a part of the color filter, can overlap with the aperture and the light-emitting element.

[0012] A second portion, which is at least another part of the color filter, overlaps with the light receiving element, and the second portion can transmit the second light.

[0013] The distance between one end of the light conversion pattern and the light-emitting element may be smaller than the distance between the other end of the light conversion pattern and the light-receiving element.

[0014] The light conversion layer includes a light blocking film that absorbs or blocks the first light, and the light blocking film may be disposed at one end of the light conversion pattern adjacent to the light receiving element.

[0015] The above light conversion pattern includes a base resin and a wavelength conversion material, and the wavelength conversion material may include at least one of a quantum dot, a quantum rod, and a phosphor.

[0016] The device further includes a light-blocking layer disposed on the light-converting layer and comprising light-transmitting openings, wherein the light-transmitting openings may overlap with the light-emitting element and the light-receiving element.

[0017] The first light is visible light, and the second light may be infrared light.

[0018] A display device according to another embodiment for solving the above problem comprises: a substrate; a circuit layer disposed on the substrate; a first light-emitting element disposed on the circuit layer and emitting a first light having a first wavelength; a second light-emitting element emitting a second light having a second wavelength; a third light-emitting element emitting a third light having a third wavelength; a light-receiving element sensing a fourth light having a fourth wavelength; and a pixel defining film partitioning the first to third light-emitting elements and the light-receiving element; a light-conversion layer disposed on the device layer and comprising a first light-conversion pattern that overlaps with the pixel defining film, wherein the first light-conversion pattern is disposed to surround the first light-emitting element on a plane, the first light-conversion pattern is configured to convert the first light emitted from the first light-emitting element into the fourth light, and the light-receiving element is configured to sense the fourth light converted by the first light-conversion pattern.

[0019] The light conversion layer further includes at least one of a second light conversion pattern and a third light conversion pattern that overlaps with the pixel defining film, wherein the second light conversion pattern is arranged to surround the second light-emitting element on a plane and the third light conversion pattern is arranged to surround the third light-emitting element on a plane, wherein the second light conversion pattern is configured to convert the second light emitted from the second light-emitting element into the fourth light, and the third light conversion pattern is configured to convert the third light emitted from the third light-emitting element into the fourth light, and the light receiving element may be configured to sense the fourth light converted by at least one of the second light conversion pattern and the third light conversion pattern.

[0020] Each of the above first to third light conversion patterns may include first to third openings that overlap with the first to third light-emitting elements.

[0021] The apparatus further comprises a first color filter that transmits the first light, a second color filter that transmits the second light, and a third color filter that transmits the third light, disposed on the light conversion layer, wherein at least a portion of each of the first to third color filters may overlap with the light receiving element.

[0022] The apparatus includes a first region in which the first light-emitting element and the light-receiving element are disposed, and a second region in which the second light-emitting element and the third light-emitting element are disposed, wherein the first light conversion pattern may be disposed only in the first region and not in the second region.

[0023] The apparatus further comprises a first color filter that transmits the first light, a second color filter that transmits the second light, and a third color filter that transmits the third light, disposed on the light conversion layer, wherein in the first region, the first color filter overlaps with the first light-emitting element and the light-receiving element, and in the second region, the second color filter overlaps with the second light-emitting element and the third color filter overlaps with the third light-emitting element.

[0024] The first to third lights are visible light, and the fourth light may be infrared light.

[0025] An electronic device according to one embodiment for solving the above problem comprises a display device for displaying an image, a processor for providing an image driving signal to the display device, and a power module for supplying power to the display device and the processor. The display device comprises a substrate, a circuit layer disposed on the substrate, a light-emitting element disposed on the circuit layer and emitting a first light having a first wavelength, a light-receiving element for sensing a second light having a second wavelength, and a pixel defining film separating the light-emitting element and the light-receiving element, a device layer comprising a light conversion pattern disposed on the device layer and overlapping with the pixel defining film, wherein the light conversion pattern is configured to convert the first light emitted from the light-emitting element into the second light, and the light-receiving element is configured to sense the second light converted by the light conversion pattern. Effects of the invention

[0026] According to one embodiment of the present invention, a display device and an electronic device including the same may include a light-emitting element and a light-receiving element, and may have high resolution.

[0027] The effects according to the embodiments are not limited to those exemplified above, and a wider variety of effects are included in this specification. Brief explanation of the drawing

[0028] FIG. 1 is a schematic perspective view showing an electronic device according to one embodiment. FIG. 2 is a perspective view showing a display device included in an electronic device according to one embodiment. FIG. 3 is a cross-sectional view showing a display device according to one embodiment. FIG. 4 is a plan view showing a light-emitting pixel, a sensing pixel, various driving parts, and various wirings of a display device according to one embodiment. FIG. 5 is a block diagram showing a light-emitting pixel, a sensing pixel, various driving units, and various wirings of a display device according to one embodiment. FIG. 6 is a circuit diagram showing a light-emitting pixel of a display device according to one embodiment. FIG. 7 is a cross-sectional view showing a light-emitting pixel of a display device according to one embodiment. FIG. 8 is a circuit diagram showing a detection pixel of a display device according to one embodiment. FIG. 9 is a cross-sectional view showing a detection pixel of a display device according to one embodiment. FIG. 10 is a plan view showing a part of the display area of ​​a display device according to one embodiment. Figure 11 is a cross-sectional view taken along X1-X1' of Figure 10. Figure 12 is a cross-sectional view taken along X2-X2' of Figure 10. FIG. 13 is a cross-sectional view showing the operation of a display device according to an embodiment of FIG. 10. FIG. 14 is a cross-sectional view taken along X1-X1' of FIG. 10 of a display device according to another embodiment. FIG. 15 is a cross-sectional view taken along X2-X2' of FIG. 10 of a display device according to another embodiment. FIG. 16 is a plan view showing a part of the display area of ​​a display device according to another embodiment. FIG. 17 is a cross-sectional view taken along X3-X3' of FIG. 16. FIG. 18 is a cross-sectional view showing the operation of a display device according to an embodiment of FIG. 16. FIG. 19 is a block diagram of an electronic device according to one embodiment. FIG. 20 is a schematic diagram of an electronic device according to various embodiments. Specific details for implementing the invention

[0029] The advantages and features of the present invention and the methods for achieving them will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but may be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims.

[0030] When an element or layer is referred to as being "on" another element or layer, it includes cases where another layer or element is interposed directly above or in between. Likewise, when referred to as "below," "left," and "right," it includes cases where they are interposed immediately adjacent to another element or where another layer or material is interposed in between. Throughout the specification, the same reference numerals refer to the same components.

[0031] Although terms such as "first," "second," etc., are used to describe various components, it goes without saying that these components are not limited by these terms. These terms are used merely to distinguish one component from another. Therefore, it goes without saying that the first component mentioned below may also be the second component within the technical scope of the present invention.

[0032] The features of each of the various embodiments of the present invention may be combined or combined with one another, either partially or wholly, and may technically enable various interlocking and operation. Each embodiment may be implemented independently of one another or may be implemented together in an associated relationship.

[0033] Specific embodiments will be described below with reference to the attached drawings.

[0034] FIG. 1 is a schematic perspective view showing an electronic device according to one embodiment.

[0035] Referring to FIG. 1, the electronic device (1) displays a video or a still image. The electronic device (1) may refer to any electronic device that provides a display screen. For example, a television, laptop, monitor, billboard, Internet of Things, mobile phone, smartphone, tablet PC (Personal Computer), electronic watch, smart watch, watch phone, head-mounted display, mobile communication terminal, electronic notebook, electronic book, PMP (Portable Multimedia Player), navigation, game console, digital camera, camcorder, etc. that provide a display screen may be included in the electronic device (1).

[0036] The electronic device (1) may include a display device (10) (see FIG. 2) that provides a display screen. Examples of display devices include an inorganic light-emitting diode display device, an organic light-emitting diode display device, a quantum dot light-emitting display device, a plasma display device, a field emission display device, etc. Below, an example of a display device is given in which an organic light-emitting diode display device is applied, but it is not limited thereto, and if the same technical concept is applicable, it can be applied to other display devices.

[0037] The shape of the electronic device (1) can be varied in many ways. For example, the electronic device (1) may have a shape such as a horizontally elongated rectangle, a vertically elongated rectangle, a square, a square with rounded corners (vertices), other polygons, or a circle. The shape of the display area (DA) of the electronic device (1) may also be similar to the overall shape of the electronic device (1). In FIG. 1, an example of an electronic device (1) with a rectangular shape in which the length of the second direction (DR2) is longer than the length of the first direction (DR1) is shown.

[0038] In the illustrated drawing, the first direction (DR1) and the second direction (DR2) each intersect each other as horizontal directions. For example, the first direction (DR1) and the second direction (DR2) may be mutually orthogonal. Additionally, the third direction (DR3) intersects the first direction (DR1) and the second direction (DR2), and may be, for example, an orthogonal vertical direction. Unless otherwise defined, in this specification, the direction indicated by the arrows of the first to third directions (DR1, DR2, DR3) may be referred to as one side, and the opposite direction may be referred to as the other side. Furthermore, in this specification, “up,” “upper side,” “top,” “top,” and “upper surface” refer to the direction in which the arrow of the drawing points among the third direction (DR3) based on the drawing, and “lower,” “lower side,” “lower,” “bottom,” and “lower surface” refer to the direction opposite to the direction in which the arrow of the third direction (DR3) points based on the drawing.

[0039] The electronic device (1) may include a display area (DA) and a non-display area (NDA). The display area (DA) is an area where a screen can be displayed, and the non-display area (NDA) is an area where a screen is not displayed. The display area (DA) may also be referred to as an active area, and the non-display area (NDA) as an inactive area. The display area (DA) may generally occupy the center of the electronic device (1).

[0040] The display area (DA) may include a first display area (DA1), a second display area (DA2), and a third display area (DA3). The second display area (DA2) and the third display area (DA3) are areas where components for adding various functions to the electronic device (1) are placed, and the second display area (DA2) and the third display area (DA3) may correspond to component areas.

[0041] For example, in the second display area (DA2) and the third display area (DA3), a camera module for capturing or recognizing an image, a face recognition sensor module for detecting a user's face, a pupil recognition sensor module for detecting a user's pupil, an accelerometer sensor module for determining the movement of the display device, a geomagnetic sensor module, a proximity sensor module and an infrared sensor module for detecting proximity to the front of the display device (10), and an illuminance sensor module for measuring the degree of external brightness may be disposed.

[0042] FIG. 2 is a perspective view showing a display device included in an electronic device according to one embodiment.

[0043] Referring to FIG. 2 in addition to FIG. 1, an electronic device (1) according to one embodiment may include a display device (10). The display device (10) may provide a screen displayed on the electronic device (1). The display device (10) may have a planar shape similar to that of the electronic device (1). For example, the display device (10) may have a shape similar to a rectangle having a short side in a first direction (DR1) and a long side in a second direction (DR2). The corner where the short side in the first direction (DR1) and the long side in the second direction (DR2) meet may be formed rounded to have curvature, but is not limited thereto and may be formed at a right angle. The planar shape of the display device (10) is not limited to a rectangle and may be formed similarly to other polygons, circles, or ellipses.

[0044] The display device (10) may include a display panel (100), a display driving unit (200), a circuit board (300), a touch driving unit (400), and a power supply unit (500).

[0045] The display panel (100) may include a main area (MA) and a sub-area (SBA).

[0046] A main area (MA) may include a display area (DA) containing pixels that display an image, and a non-display area (NDA) disposed around the display area (DA). The display area (DA) may be placed in the center of the main area (MA), and the non-display area (NDA) may surround the display area (DA). The display area (DA) may include a first display area (DA1), a second display area (DA2), and a third display area (DA3). The display area (DA) may emit light from a plurality of light-emitting areas or a plurality of aperture areas. For example, a display panel (100) may include a pixel circuit including switching elements, a pixel defining film defining a light-emitting area or an aperture area, and a self-light-emitting element.

[0047] For example, the self-luminous device may include at least one of an organic light-emitting diode (OLED) including an organic light-emitting layer, a quantum dot light-emitting diode (QLED) including a quantum dot light-emitting layer, an inorganic light-emitting diode (Inorganic LED) including an inorganic semiconductor, and a micro light-emitting diode (Micro LED), but is not limited thereto.

[0048] The non-display area (NDA) may be an outer area of ​​the display area (DA). The non-display area (NDA) may be defined as an edge area of ​​the main area (MA) of the display panel (100). The non-display area (NDA) may include a gate driver (not shown) that supplies gate signals to gate lines, and fan-out lines (not shown) connecting the display driver (200) and the display area (DA).

[0049] A sub-region (SBA) may be an area extending from one side of a main area (MA). The sub-region (SBA) may include a flexible material capable of bending, folding, rolling, etc. For example, when the sub-region (SBA) is bent, the sub-region (SBA) may overlap with the main area (MA) in the thickness direction (e.g., a third direction (DR3)). The sub-region (SBA) may include a pad portion connected to a display driving unit (200) and a circuit board (300). In another embodiment, the sub-region (SBA) may be omitted, and the display driving unit (200) and the pad portion may be placed in a non-display area (NDA).

[0050] The display driver (200) can output signals and voltages for driving the display panel (100). The display driver (200) can supply data voltages to data lines. The display driver (200) can supply power voltage to power lines and supply gate control signals to the gate driver. The display driver (200) can be formed as an integrated circuit (IC) and mounted on the display panel (100) using a Chip on Glass (COG) method, a Chip on Plastic (COP) method, or an ultrasonic bonding method. For example, the display driver (200) can be placed in a sub-region (SBA) and can be overlapped in the thickness direction with the main region (MA) by bending the sub-region (SBA). As another example, the display driver (200) can be mounted on a circuit board (300).

[0051] The circuit board (300) can be attached to the pad portion of the display panel (100) using an anisotropic conductive film (ACF). The lead lines of the circuit board (300) can be electrically connected to the pad portion of the display panel (100). The circuit board (300) may be a flexible film such as a flexible printed circuit board, a printed circuit board, or a chip-on-film.

[0052] The touch driving unit (400) may be mounted on the circuit board (300). The touch driving unit (400) may be connected to the touch sensing unit of the display panel (100). The touch driving unit (400) may supply a touch driving signal to a plurality of touch electrodes of the touch sensing unit and sense the amount of change in capacitance between the plurality of touch electrodes. For example, the touch driving signal may be a pulse signal having a predetermined frequency. The touch driving unit (400) may calculate whether an input has occurred and the input coordinates based on the amount of change in capacitance between the plurality of touch electrodes. The touch driving unit (400) may be formed as an integrated circuit (IC).

[0053] The power supply unit (500) is positioned on the circuit board (300) and can supply power voltage to the display driving unit (200) and the display panel (100). The power supply unit (500) can generate a driving voltage and supply it to the driving voltage line, and generate a common voltage and supply it to the common electrode. For example, the driving voltage may be a high potential voltage for driving a light-emitting element, and the common voltage may be a low potential voltage for driving a light-emitting element. The power supply unit (500) can generate an initialization voltage and supply it to the initialization voltage line, generate a reference voltage and supply it to the reference voltage line, generate a bias voltage and supply it to the bias voltage line, and generate a reset voltage and supply it to the reset voltage line.

[0054] FIG. 3 is a cross-sectional view showing a display device according to one embodiment. FIG. 3 illustrates a state in which a sub-region (SBA) of a display panel (100) in the display device (10) of FIG. 2 is bent.

[0055] Referring to FIG. 3, the display panel (100) may include a display layer (DU), a touch sensing layer (TSU), and an optical layer (OPL). The display layer (DU) may include a substrate (SUB), a transistor layer (TFTL), a device layer (EML), and an encapsulation layer (TFEL). The optical layer (OPL) may include a light conversion layer (QDL) and a color filter layer (CFL).

[0056] The substrate (SUB) may be a base substrate or a base member. The substrate (SUB) may be a flexible substrate capable of bending, folding, rolling, etc. For example, the substrate (SUB) may include a polymer resin such as polyimide (PI), but is not limited thereto. In other embodiments, the substrate (SUB) may include a glass material or a metal material.

[0057] A transistor layer (TFTL) may be disposed on a substrate (SUB). The transistor layer (TFTL) may include a plurality of thin-film transistors constituting the light-emitting pixels and sensing pixels of the pixels. The transistor layer (TFTL) may further include gate lines, data lines, power lines, gate control lines, fan-out lines connecting the display driver (200) and the data lines, and lead lines connecting the display driver (200) and the pad portion. Each of the thin-film transistors may include a semiconductor region, a source electrode, a drain electrode, and a gate electrode. For example, if the gate driver is formed on one side of the non-display area (NDA) of the display panel (100), the gate driver may include thin-film transistors.

[0058] The transistor layer (TFTL) can be placed in the display area (DA), non-display area (NDA), and sub-area (SBA). The thin-film transistors, gate lines, data lines, and power lines of the transistor layer (TFTL) can be placed in the display area (DA). The gate control lines and fan-out lines of the transistor layer (TFTL) can be placed in the non-display area (NDA). The lead lines of the transistor layer (TFTL) can be placed in the sub-area (SBA).

[0059] The display device (10) according to the present embodiment can implement a display device (10) that is structurally simple and has reduced manufacturing costs by arranging a light-emitting pixel circuit that drives a light-emitting element and a detection pixel circuit that drives a light-receiving element together in a transistor layer (TFTL). For example, the wiring layers and insulating layers included in the transistor layer (TFTL) are shared by the light-emitting pixel circuit and the detection pixel circuit, and the wiring formation process of the light-emitting pixel circuit and the wiring formation process of the detection pixel circuit can be performed simultaneously or continuously. That is, since only the detection pixel circuit formation process needs to be added to the manufacturing process of the existing display device (10), manufacturing costs are reduced, and the structure can be simplified by sharing some layers.

[0060] The device layer (EML) may be disposed on the transistor layer (TFTL). The device layer (EML) may include a light-emitting element of a light-emitting pixel, a light-receiving element of a sensing pixel, and a pixel defining film that defines the light-emitting pixel and the sensing pixel. The light-emitting element may emit light by sequentially stacking a pixel electrode, a light-emitting layer, and a common electrode, and the light-receiving element may receive light by sequentially stacking a sensor electrode, a light-receiving layer, and a common electrode. The light-emitting elements and light-receiving elements of the device layer (EML) may be disposed in a display area (DA).

[0061] For example, the light-emitting layer may be an organic light-emitting layer containing an organic material. The light-emitting layer may include a hole transporting layer, an organic light-emitting layer, and an electron transporting layer. When the pixel electrode receives a predetermined voltage through a transistor of the transistor layer (TFTL) and the common electrode receives a cathode voltage, holes may move to the organic light-emitting layer through the hole transporting layer and electrons may move to the organic light-emitting layer through the electron transporting layer, and holes and electrons may combine with each other in the organic light-emitting layer to emit light. For example, the pixel electrode may be an anode electrode and the common electrode may be a cathode electrode, but is not limited thereto.

[0062] As another example, a plurality of light-emitting elements may include a quantum dot light-emitting diode comprising a quantum dot light-emitting layer, an inorganic light-emitting diode comprising an inorganic semiconductor, or a micro-light-emitting diode.

[0063] A light-receiving element can receive light and convert light energy into an electrical signal. When an object is positioned on the display panel (100), light emitted from a light-emitting element can be reflected by the object, and the light-receiving element can receive the reflected light. A sensing pixel that receives the light reflected from the object can generate a sensing signal. A main processor can generate sensing data based on this sensing signal and can determine the shape of the object or the distance from the object based on the sensing data. For example, the light-receiving element may be an organic photodiode, but is not limited thereto.

[0064] The display device (10) according to the present embodiment can realize a display device (10) that is structurally simple and has reduced manufacturing costs by arranging a light-emitting element and a light-receiving element together in an element layer (EML). For example, a deposition process for forming the light-emitting layer (EL) of the light-emitting element (see FIG. 7) and a deposition process for forming the light-receiving layer (RCL) of the light-receiving element (see FIG. 9) can be performed simultaneously or sequentially. In addition, the light-emitting element and the light-receiving element may share a hole transport layer (HTL) (see FIG. 7), an electron transport layer (ETL) (see FIG. 7), and a common electrode (CAT) (see FIG. 7) described later. That is, since only a process for forming a light-receiving element needs to be added to the manufacturing process of an existing display device, manufacturing costs are reduced, and the structure can be simplified by sharing some layers.

[0065] The encapsulation layer (TFEL) can cover the top surface and sides of the device layer (EML) and protect the device layer (EML). The encapsulation layer (TFEL) may include at least one inorganic film and at least one organic film for encapsulating the device layer (EML).

[0066] A touch sensing layer (TSU) may be disposed on an encapsulation layer (TFEL). The touch sensing layer (TSU) may include a plurality of touch electrodes for detecting a user's touch in a capacitive manner, and touch lines connecting the plurality of touch electrodes to a touch driving unit (400). For example, the touch sensing layer (TSU) may sense a user's touch in a mutual capacitance manner or a self-capacitance manner.

[0067] In another embodiment, the touch sensing layer (TSU) may be disposed on a separate substrate disposed on the display layer (DU). In this case, the substrate supporting the touch sensing layer (TSU) may be a base member that encapsulates the display layer (DU).

[0068] A plurality of touch electrodes of the touch sensing layer (TSU) may be placed in a touch sensor area that overlaps with the display area (DA). Touch lines of the touch sensing layer (TSU) may be placed in a touch peripheral area that overlaps with the non-display area (NDA).

[0069] A light conversion layer (QDL) may be disposed on a touch sensing layer (TSU). The light conversion layer (QDL) may include light conversion patterns (QDP) (see FIG. 10) disposed corresponding to specific pixels of a display layer (DU). The light conversion layer (QDL) may convert the wavelength of light incident on the light conversion layer (QDL) and re-emit the converted light. For example, the light conversion layer (QDL) may convert visible light emitted from a light-emitting element of the display layer (DU) into infrared light. By including the light conversion layer (QDL), the display device (10) can convert light emitted from a light-emitting element into light that can be sensed by a light-receiving element.

[0070] A color filter layer (CFL) may be disposed on a light conversion layer (QDL). The color filter layer (CFL) may include a plurality of color filters corresponding to each of a plurality of light-emitting regions. Each of the color filters may selectively transmit light of a specific wavelength and block or absorb light of other wavelengths. The color filter layer (CFL) may absorb a portion of the light entering from outside the display device (10) to reduce reflected light caused by external light. Therefore, the color filter layer (CFL) can prevent color distortion caused by external light reflection.

[0071] Since the color filter layer (CFL) is placed directly on the light conversion layer (QDL), the display device (10) may not require a separate substrate for the color filter layer (CFL). Therefore, the thickness of the display device (10) may be relatively small.

[0072] In some embodiments, the display device (10) may further include an optical device (600). The optical device (600) may be placed in a second display area (DA2) or a third display area (DA3). The optical device (600) may emit or receive light in the infrared, ultraviolet, and visible light bands. For example, the optical device (600) may be an optical sensor that detects light incident on the display device (10), such as a proximity sensor, an illuminance sensor, and a camera sensor or an image sensor.

[0073] The display device (10) according to the present embodiment is provided with a light-receiving element embedded in the display panel (100) in addition to (or instead of) an optical device (600) provided separately from the display panel (100), so that the display device (10) can perform both a light-emitting function and a light-receiving function simultaneously.

[0074] FIG. 4 is a plan view showing a light-emitting pixel, a sensing pixel, various driving units, and various wirings of a display device according to one embodiment. FIG. 5 is a block diagram showing a light-emitting pixel, a sensing pixel, various driving units, and various wirings of a display device according to one embodiment.

[0075] Referring to FIGS. 4 and 5, the display panel (100) may include a display area (DA) and a non-display area (NDA). The display area (DA) may include a light-emitting pixel (PX), a sensing pixel (OPD), a power line (VL), a data line (DL), a read-out line (ROL), a gate line (GL), and a light-emitting control line (ECL).

[0076] Each of the plurality of light-emitting pixels (PX) can be connected to a gate line (GL), a light-emitting control line (ECL), a data line (DL), and a power line (VL). Each of the plurality of light-emitting pixels (PX) may include a plurality of transistors, light-emitting elements, and capacitors.

[0077] Each of the plurality of sensing pixels (OPD) can be connected to a gate line (GL), a power line (VL), and a read-out line (ROL). Each of the plurality of sensing pixels (OPD) may include a plurality of transistors and photodetectors.

[0078] The gate lines (GL) can be extended in a first direction (DR1) and can be spaced apart from each other in a second direction (DR2) that intersects the first direction (DR1). The gate lines (GL) can sequentially supply gate signals to the emitting pixels (PX) and the sensing pixels (OPD).

[0079] The light emission control lines (ECLs) can be extended in a first direction (DR1) and spaced apart from each other in a second direction (DR2). The light emission control lines (ECLs) can sequentially supply light emission signals to light emission pixels (PX).

[0080] Data lines (DL) can be extended in a second direction (DR2) and can be spaced apart from each other in a first direction (DR1). The data lines (DL) can supply data voltage to light-emitting pixels (PX). The data voltage can determine the brightness of each light-emitting pixel (PX).

[0081] The power line (VL) may be extended in a second direction (DR2) and may be spaced apart from each other in a first direction (DR1). The power line (VL) may supply power voltage to light-emitting pixels (PX) and sensing pixels (OPD). Here, the power voltage may be a driving voltage, a common voltage, an initialization voltage, a reference voltage, a bias voltage, or a reset voltage. The driving voltage may be a high potential voltage for driving the light-emitting pixel (PX), and the common voltage may be a low potential voltage for driving the light-emitting pixel (PX) and the sensing pixel (OPD).

[0082] A non-display area (NDA) may surround a display area (DA). The non-display area (NDA) may include a gate driver (610), a light emission control driver (620), fan-out lines (FL), a first gate control line (GSL1), and a second gate control line (GSL2).

[0083] Fan-out lines (FL) can extend from the display driver (200) to the display area (DA). The fan-out lines (FL) can supply data voltage received from the display driver (200) to the data line (DL), supply power voltage received from the display driver (200) to the power line (VL), and supply a sensing signal received from the read-out line (ROL) to the display driver (200). Accordingly, the display driver (200) can drive the light-emitting pixel (PX) and the sensing pixel (OPD).

[0084] The first gate control line (GSL1) may extend from the display driver (200) to the gate driver (610). The first gate control line (GSL1) may supply a gate control signal (GCS) received from the display driver (200) to the gate driver (610).

[0085] The second gate control line (GSL2) can be extended from the display driver (200) to the light emission control driver (620). The second gate control line (GSL2) can supply a light emission control signal (ECS) received from the display driver (200) to the light emission control driver (620).

[0086] A sub-region (SBA) may extend from one side of a non-display area (NDA). The sub-region (SBA) may include a display driver (200) and a pad portion (DP). The pad portion (DP) may be positioned adjacent to one edge of the sub-region (SBA) than the display driver (200). The pad portion (DP) may be electrically connected to a circuit board (300) through an anisotropic conductive film (ACF).

[0087] The display driving unit (200) may include a timing control unit (210) and a data driving unit (220).

[0088] The timing control unit (210) can receive digital video data (DATA) and timing signals from the circuit board (300). The timing control unit (210) can generate a data control signal (DCS) based on the timing signals and supply the digital video data (DATA) and the data control signal (DCS) to the data driver (220) to control the operation timing of the data driver (220). The timing control unit (210) can generate a gate control signal (GCS) and supply it to the gate driver (610) and control the operation timing of the gate driver (610). The timing control unit (210) can generate a light emission control signal (ECS) and supply it to the light emission control driver (620) and control the operation timing of the light emission control driver (620).

[0089] The data driver (220) can convert digital video data (DATA) into analog data voltages and supply them to data lines (DL) through fan-out lines (FL). The gate signals of the gate driver (610) can select light-emitting pixels (PX) to which the data voltage is supplied, and the selected light-emitting pixels (PX) can receive the data voltage through the data lines (DL). The data driver (220) can supply the received sensing signal to the main processor through the read-out line (ROL).

[0090] The power supply unit (500) is positioned on the circuit board (300) and can supply power voltage to the display driving unit (200) and the display panel (100). The power supply unit (500) can generate power voltage and supply it to the power line (VL), and generate a common voltage and supply it to the common electrode common to the light-emitting pixels (PX) and the sensing pixels (OPD). The power supply unit (500) can generate an initial voltage and supply it to the initial voltage line, generate a reference voltage and supply it to the reference voltage line, generate a bias voltage and supply it to the bias voltage line, and generate a reset voltage and supply it to the reset voltage line.

[0091] The gate driver (610) may be positioned on one side outside the display area (DA) or on one side of the non-display area (NDA), and the light emission control driver (620) may be positioned on the other side outside the display area (DA) or on the other side of the non-display area (NDA), but is not limited thereto. As another example, the gate driver (610) and the light emission control driver (620) may be positioned on either one side or the other side of the non-display area (NDA).

[0092] The gate driver (610) may include a plurality of transistors that generate gate signals based on a gate control signal (GCS). The light emission control driver (620) may include a plurality of transistors that generate light emission signals based on a light emission control signal (ECS). For example, the transistors of the gate driver (610) and the transistors of the light emission control driver (620) may be formed on the same layer as the transistors of each light-emitting pixel (PX). The gate driver (610) may supply gate signals to gate lines (GL), and the light emission control driver (620) may supply light emission signals to light emission control lines (ECL).

[0093] FIG. 6 is a circuit diagram showing a light-emitting pixel of a display device according to one embodiment.

[0094] Referring to FIG. 6, the light-emitting pixel (PX) can be connected to a first gate line (GWL), a second gate line (GCL), a third gate line (GIL), a fourth gate line (GBL), a light-emitting control line (ECL), a data line (DL), a driving voltage line (VDDL), a first initialization voltage line (VIL1), a second initialization voltage line (VIL2), a bias voltage line (VBL), and a low potential line (VSSL).

[0095] The light-emitting pixel (PX) may include a light-emitting element (ED) and a light-emitting pixel circuit that drives the light-emitting element (ED). The light-emitting pixel circuit may include first to eighth transistors (ST1, ST2, ST3, ST4, ST5, ST6, ST7, ST8) and a capacitor (CST).

[0096] The first transistor (ST1) can control the driving current supplied to the light-emitting element (ED). The first transistor (ST1) may include a gate electrode, a first electrode, and a second electrode. The gate electrode of the first transistor (ST1) may be connected to a third node (N3), the first electrode may be connected to a first node (N1), and the second electrode may be connected to a second node (N2). For example, the first electrode of the first transistor (ST1) may be a source electrode and the second electrode may be a drain electrode, but is not limited thereto.

[0097] The first transistor (ST1) can control the source-drain current (Isd, hereinafter referred to as "driving current") according to the data voltage applied to the gate electrode. The driving current Isd flowing through the channel of the first transistor (ST1) may be proportional to the square of the difference between the voltage (Vsg) between the source electrode and the gate electrode of the first transistor (ST1) and the threshold voltage (Vth) (Isd = k × (Vsg - Vth) 2Here, k represents the proportionality constant determined by the structure and physical characteristics of the first transistor (ST1), Vsg represents the source-gate voltage of the first transistor (ST1), and Vth represents the threshold voltage of the first transistor (ST1).

[0098] A light-emitting element (ED) can emit light by receiving a driving current. The amount of light emitted or the brightness of the light-emitting element (ED) may be proportional to the magnitude of the driving current. The light-emitting element (ED) may include a first electrode, a second electrode, and a light-emitting layer disposed between the first electrode and the second electrode. The first electrode of the light-emitting element (ED) may be connected to a fourth node (N4). The first electrode of the light-emitting element (ED) may be connected to the second electrode of the sixth transistor (ST6) and the first electrode of the seventh transistor (ST7) through the fourth node (N4). The second electrode of the light-emitting element (ED) may be electrically connected to a low potential line (VSSL). The second electrode of the light-emitting element (ED) may receive a low potential voltage from the low potential line (VSSL). For example, the first electrode of the light-emitting element (ED) may be an anode electrode or a pixel electrode, and the second electrode may be a cathode electrode or a common electrode, but is not limited thereto.

[0099] The second transistor (ST2) can be turned on by the first gate signal of the first gate line (GWL) to electrically connect the data line (DL) and the first node (N1), which is the first electrode of the first transistor (ST1). By turning on the second transistor (ST2) based on the first gate signal, it can supply a data voltage to the first node (N1). The gate electrode of the second transistor (ST2) can be connected to the first gate line (GWL), the first electrode can be connected to the data line (DL), and the second electrode can be connected to the first node (N1). The second electrode of the second transistor (ST2) can be connected to the first electrode of the first transistor (ST1), the second electrode of the fifth transistor (ST5), and the second electrode of the eighth transistor (ST8) through the first node (N1). For example, the first electrode of the second transistor (ST2) may be the source electrode and the second electrode may be the drain electrode, but is not limited thereto.

[0100] The third transistor (ST3) can be turned on by the second gate signal of the second gate line (GCL) to electrically connect the second node (N2), which is the second electrode of the first transistor (ST1), and the third node (N3), which is the gate electrode of the first transistor (ST1). The gate electrode of the third transistor (ST3) can be connected to the second gate line (GCL), the first electrode can be connected to the second node (N2), and the second electrode can be connected to the third node (N3). The first electrode of the third transistor (ST3) can be connected to the second electrode of the first transistor (ST1) and the first electrode of the sixth transistor (ST6) through the second node (N2). The second electrode of the third transistor (ST3) can be connected to the gate electrode of the first transistor (ST1), the first electrode of the fourth transistor (ST4), and the first capacitor electrode of the capacitor (CST) through the third node (N3). For example, the first electrode of the third transistor (ST3) may be the drain electrode and the second electrode may be the source electrode, but is not limited thereto.

[0101] The fourth transistor (ST4) can be turned on by the third gate signal of the third gate line (GIL) to electrically connect the third node (N3), which is the gate electrode of the first transistor (ST1), and the first initialization voltage line (VIL1). By turning on the fourth transistor (ST4) based on the third gate signal, the gate electrode of the first transistor (ST1) can be discharged to the first initialization voltage. The gate electrode of the fourth transistor (ST4) can be connected to the third gate line (GIL), the first electrode can be connected to the third node (N3), and the second electrode can be connected to the first initialization voltage line (VIL1). The first electrode of the fourth transistor (ST4) can be connected to the gate electrode of the first transistor (ST1), the second electrode of the third transistor (ST3), and the first capacitor electrode of the capacitor (CST) through the third node (N3). For example, the first electrode of the fourth transistor (ST4) may be the drain electrode and the second electrode may be the source electrode, but is not limited thereto.

[0102] The fifth transistor (ST5) can be turned on by a light emission signal from the light emission control line (ECL) to electrically connect the driving voltage line (VDDL) and the first node (N1), which is the first electrode of the first transistor (ST1). The gate electrode of the fifth transistor (ST5) can be connected to the light emission control line (ECL), the first electrode can be connected to the driving voltage line (VDDL), and the second electrode can be connected to the first node (N1). The second electrode of the fifth transistor (ST5) can be electrically connected to the first electrode of the first transistor (ST1), the second electrode of the second transistor (ST2), and the second electrode of the eighth transistor (ST8) through the first node (N1). For example, the first electrode of the fifth transistor (ST5) can be the source electrode and the second electrode can be the drain electrode, but is not limited thereto.

[0103] The sixth transistor (ST6) can be turned on by a light emission signal from the light emission control line (ECL) to electrically connect the second node (N2), which is the second electrode of the first transistor (ST1), and the fourth node (N4), which is the first electrode of the light-emitting element (ED). The gate electrode of the sixth transistor (ST6) is connected to the light emission control line (ECL), the first electrode is connected to the second node (N2), and the second electrode can be connected to the fourth node (N4). The first electrode of the sixth transistor (ST6) can be connected to the second electrode of the first transistor (ST1) and the first electrode of the third transistor (ST3) through the second node (N2). The second electrode of the sixth transistor (ST6) can be connected to the first electrode of the light-emitting element (ED) and the first electrode of the seventh transistor (ST7) through the fourth node (N4). For example, the first electrode of the sixth transistor (ST6) may be the source electrode and the second electrode may be the drain electrode, but is not limited thereto.

[0104] When the fifth transistor (ST5), the first transistor (ST1), and the sixth transistor (ST6) are all turned on, the driving current can be supplied to the light-emitting element (ED).

[0105] The seventh transistor (ST7) can be turned on by the fourth gate signal of the fourth gate line (GBL) to electrically connect the second initialization voltage line (VIL2) and the fourth node (N4), which is the first electrode of the light-emitting element (ED). By turning on the seventh transistor (ST7) based on the fourth gate signal, the first electrode of the light-emitting element (ED) can be discharged to the second initialization voltage. The gate electrode of the seventh transistor (ST7) can be connected to the fourth gate line (GBL), the first electrode can be connected to the fourth node (N4), and the second electrode can be connected to the second initialization voltage line (VIL2). The first electrode of the seventh transistor (ST7) can be connected to the first electrode of the light-emitting element (ED) and the second electrode of the sixth transistor (ST6) through the fourth node (N4). For example, the first electrode of the seventh transistor (ST7) can be the source electrode and the second electrode can be the drain electrode, but is not limited thereto.

[0106] The eighth transistor (ST8) can be turned on by the fourth gate signal of the fourth gate line (GBL) to electrically connect the bias voltage line (VBL) and the first node (N1), which is the first electrode of the first transistor (ST1). The gate electrode of the eighth transistor (ST8) can be connected to the fourth gate line (GBL), the first electrode can be connected to the bias voltage line (VBL), and the second electrode can be connected to the first node (N1). The second electrode of the eighth transistor (ST8) can be electrically connected to the first electrode of the first transistor (ST1), the second electrode of the second transistor (ST2), and the second electrode of the fifth transistor (ST5) through the first node (N1). For example, the first electrode of the eighth transistor (ST8) can be the source electrode and the second electrode can be the drain electrode, but is not limited thereto. Optionally, the eighth transistor (ST8) can be omitted.

[0107] Each of the first transistor (ST1), second transistor (ST2), fifth transistor (ST5), sixth transistor (ST6), seventh transistor (ST7), and eighth transistor (ST8) may include a silicon-based semiconductor region. For example, each of the first transistor (ST1), second transistor (ST2), fifth transistor (ST5), sixth transistor (ST6), seventh transistor (ST7), and eighth transistor (ST8) may include a semiconductor region made of Low Temperature Polycrystalline Silicon (LTPS). A semiconductor region made of Low Temperature Polycrystalline Silicon may have high electron mobility and excellent turn-on characteristics. Accordingly, the display device (10) can stably and efficiently drive a plurality of light-emitting pixels (PX) by including the first transistor (ST1), second transistor (ST2), fifth transistor (ST5), sixth transistor (ST6), seventh transistor (ST7), and eighth transistor (ST8), which have excellent turn-on characteristics.

[0108] Each of the first transistor (ST1), second transistor (ST2), fifth transistor (ST5), sixth transistor (ST6), seventh transistor (ST7), and eighth transistor (ST8) may correspond to a p-type transistor. For example, each of the first transistor (ST1), second transistor (ST2), fifth transistor (ST5), sixth transistor (ST6), seventh transistor (ST7), and eighth transistor (ST8) can output current flowing into the first electrode to the second electrode based on the gate low voltage applied to the gate electrode.

[0109] Each of the third transistor (ST3) and the fourth transistor (ST4) may include an oxide-based semiconductor region. For example, each of the third transistor (ST3) and the fourth transistor (ST4) may have a coplanar structure in which a gate electrode is placed on top of the oxide-based semiconductor region. Transistors having a coplanar structure have excellent leakage current characteristics and enable low-frequency driving, thereby reducing power consumption. Accordingly, by including the third transistor (ST3) and the fourth transistor (ST4) which have excellent leakage current characteristics, the display device (10) can prevent leakage current from flowing within the light-emitting pixel and can stably maintain the voltage within the light-emitting pixel.

[0110] Each of the third transistor (ST3) and the fourth transistor (ST4) may correspond to an n-type transistor. For example, each of the third transistor (ST3) and the fourth transistor (ST4) can output current flowing into the first electrode to the second electrode based on the gate high voltage applied to the gate electrode.

[0111] A capacitor (CST) can be connected between a third node (N3), which is the gate electrode of a first transistor (ST1), and a driving voltage line (VDDL). For example, the first capacitor electrode of the capacitor (CST) is connected to the third node (N3), and the second capacitor electrode of the capacitor (CST) is connected to the driving voltage line (VDDL), thereby maintaining a potential difference between the driving voltage line (VDDL) and the gate electrode of the first transistor (ST1).

[0112] FIG. 7 is a cross-sectional view showing a light-emitting pixel of a display device according to one embodiment.

[0113] Referring to FIG. 7 in addition to FIG. 6, the display panel (100) may include a substrate (SUB), a transistor layer (TFTL), a device layer (EML), and an encapsulation layer (TFEL). The light-emitting pixel (PX) may include a light-emitting pixel circuit and a light-emitting element (ED). The light-emitting pixel circuit may be placed in the transistor layer (TFTL), and the light-emitting element (ED) may be placed in the device layer (EML).

[0114] The substrate (SUB) may be a base substrate or a base member. The substrate (SUB) may be a flexible substrate capable of bending, folding, rolling, etc. For example, the substrate (SUB) may include a polymer resin such as polyimide, but is not limited thereto. As another example, the substrate (SUB) may include a glass material or a metal material.

[0115] The transistor layer (TFTL) may include a buffer layer (BF), a first active layer (ACTL1), a first gate insulating layer (GI1), a first gate layer (GTL1), a second gate insulating layer (GI2), a second gate layer (GTL2), a first interlayer insulating layer (ILD1), a second active layer (ACTL2), a third gate insulating layer (GI3), a third gate layer (GTL3), a second interlayer insulating layer (ILD2), a first source metal layer (SDL1), a first via layer (VIA1), a second source metal layer (SDL2), and a second via layer (VIA2).

[0116] A buffer layer (BF) may be disposed on a substrate (SUB). For example, the buffer layer (BF) may include an inorganic film capable of preventing the penetration of air or moisture. For example, the buffer layer (BF) may include a plurality of inorganic films stacked alternately.

[0117] The first active layer (ACTL1) may be disposed on the buffer layer (BF). The first active layer (ACTL1) may include a silicon-based material. For example, the first active layer (ACTL1) may be made of low-temperature polycrystalline silicon (LTPS). The first active layer (ACTL1) may include a semiconductor region (ACT1) of the first transistor (ST1), a first electrode (SE1), a second electrode (DE1), and a semiconductor region (ACT2), a first electrode (SE2), and a second electrode (DE2) of the second transistor (ST2).

[0118] The first gate insulating layer (GI1) can be disposed on the first active layer (ACTL1). The first gate insulating layer (GI1) can insulate the first active layer (ACTL1) from the first gate layer (GTL1).

[0119] A first gate layer (GTL1) may be disposed on a first gate insulating layer (GI1). The first gate layer (GTL1) may include a gate electrode (GE1) of a first transistor (ST1), a gate electrode (GE2) of a second transistor (ST2), and a first capacitor electrode (CPE1). The gate electrode (GE1) of the first transistor (ST1) may be a part of the first capacitor electrode (CPE1), and the gate electrode (GE2) of the second transistor (ST2) may be a part of the first gate line (GWL).

[0120] The second gate insulating layer (GI2) can be disposed on the first gate layer (GTL1). The second gate insulating layer (GI2) can insulate the first gate layer (GTL1) and the second gate layer (GTL2).

[0121] The second gate layer (GTL2) may be disposed on the second gate insulating layer (GI2). The second gate layer (GTL2) may include a second capacitor electrode (CPE2). The second capacitor electrode (CPE2) may overlap with the first capacitor electrode (CPE1).

[0122] The first interlayer insulating layer (ILD1) can be disposed on the second gate layer (GTL2). The first interlayer insulating layer (ILD1) can insulate the second gate layer (GTL2) and the second active layer (ACTL2).

[0123] The second active layer (ACTL2) may be disposed on the first interlayer insulating layer (ILD1). The second active layer (ACTL2) may include an oxide-based material. The second active layer (ACTL2) may include a semiconductor region (ACT3) of the third transistor (ST3), a first electrode (DE3), and a second electrode (SE3).

[0124] The third gate insulating layer (GI3) can be disposed on the second active layer (ACTL2). The third gate insulating layer (GI3) can insulate the second active layer (ACTL2) from the third gate layer (GTL3).

[0125] The third gate layer (GTL3) may be disposed on the third gate insulating layer (GI3). The third gate layer (GTL3) may include the gate electrode (GE3) of the third transistor (ST3). The gate electrode (GE3) of the third transistor (ST3) may be a part of the second gate line (GCL).

[0126] The second interlayer insulating layer (ILD2) can be disposed on the third gate layer (GTL3). The second interlayer insulating layer (ILD2) can insulate the third gate layer (GTL3) from the first source metal layer (SDL1).

[0127] The first source metal layer (SDL1) may be disposed on the second interlayer insulating layer (ILD2). The first source metal layer (SDL1) may include first to third connecting electrodes (CE1, CE2, CE3). The first connecting electrode (CE1) may electrically connect the data line (DL) and the first electrode (SE2) of the second transistor (ST2). The second connecting electrode (CE2) may electrically connect the first capacitor electrode (CPE1) and the second electrode (SE3) of the third transistor (ST3). The third connecting electrode (CE3) may electrically connect the first electrode (DE3) of the third transistor (ST3) and the second electrode (DE1) of the first transistor (ST1).

[0128] A first via layer (VIA1) may be disposed on a first source metal layer (SDL1). The first via layer (VIA1) may insulate the first source metal layer (SDL1) and the second source metal layer (SDL2). The upper surface of the first via layer (VIA1) may be flat. The first via layer (VIA1) may include an organic insulating material such as polyimide.

[0129] The second source metal layer (SDL2) may be disposed on the first via layer (VIA1). The second source metal layer (SDL2) may include a data line (DL).

[0130] The second via layer (VIA2) may be disposed on the second source metal layer (SDL2). The second via layer (VIA2) may insulate the second source metal layer (SDL2) and the pixel electrode (AE). The upper surface of the second via layer (VIA2) may be flat. The second via layer (VIA2) may include an organic insulating material such as polyimide.

[0131] The device layer (EML) may include a pixel defining film (PDL) and a light-emitting element (ED).

[0132] A pixel defining layer (PDL) may be disposed on a second via layer (VIA2). The pixel defining layer (PDL) may define a plurality of light-emitting regions (LA). The pixel defining layer (PDL) may include an organic insulating material such as polyimide, but is not limited thereto.

[0133] The light-emitting element (ED) may include a pixel electrode (AE), a hole transport layer (HTL), a light-emitting layer (EL), an electron transport layer (ETL), and a common electrode (CAT). The pixel electrode (AE) may be disposed on a second via layer (VIA2). The pixel electrode (AE) may overlap with one of a plurality of light-emitting regions (LA) defined by a pixel defining film (PDL). The pixel electrode (AE) may receive a driving current from the pixel circuit of the light-emitting pixel (PX).

[0134] The hole transport layer (HTL) may be placed on the pixel electrode (AE) in the light-emitting region (LA) and on the pixel defining film (PDL) in a region other than the light-emitting region (LA). The hole transport layer (HTL) may not be separated by light-emitting pixels (PX) but may be implemented as a common layer for all light-emitting pixels (PX) and sensing pixels (OPD).

[0135] The emitting layer (EL) may be disposed on the hole transport layer (HTL) in the emitting region (LA). For example, the emitting layer (EL) may be an organic emitting layer made of an organic material, but is not limited thereto.

[0136] The electron transport layer (ETL) may be placed on the emitting layer (EL) in the emitting region (LA) and on the hole transport layer (HTL) in a region other than the emitting region (LA). The electron transport layer (ETL) may not be separated by emitting pixels (PX) but may be implemented as a common layer for all emitting pixels (PX) and sensing pixels (OPD).

[0137] A common electrode (CAT) can be placed on an electron transport layer (ETL). For example, the common electrode (CAT) can be implemented as an electrode common to all emitting pixels (PX) and sensing pixels (OPD) without being separated by emitting pixels (PX). The common electrode (CAT) can be a transparent electrode and can transmit light. The common electrode (CAT) can be electrically connected to a low potential line (VSSL) and can receive a low potential voltage, a common voltage, or a cathode voltage.

[0138] When the light-emitting layer (EL) corresponds to an organic light-emitting layer, the pixel circuit of the light-emitting pixel (PX) applies a predetermined voltage to the pixel electrode (AE), and when the common electrode (CAT) receives a common voltage or a cathode voltage, holes can move to the light-emitting layer (EL) through the hole transport layer (HTL), electrons can move to the light-emitting layer (EL) through the electron transport layer (ETL), and holes and electrons can combine with each other in the light-emitting layer (EL) to emit light.

[0139] The encapsulation layer (TFEL) is disposed on a common electrode (CAT) and can cover a plurality of light-emitting elements (ED). The encapsulation layer (TFEL) may include at least one inorganic film to prevent oxygen or moisture from penetrating into the plurality of light-emitting elements (ED). The encapsulation layer (TFEL) may include at least one organic film to protect the plurality of light-emitting elements (ED) from foreign substances such as dust.

[0140] FIG. 8 is a circuit diagram showing a detection pixel of a display device according to one embodiment.

[0141] Referring to FIG. 8, the sensing pixel (OPD) can be connected to a first gate line (GWL), a reset signal line (GRL), a reset voltage line (VRL), a second initialization voltage line (VIL2), a low potential line (VSSL), and a read-out line (ROL).

[0142] The sensing pixel (OPD) may include a light receiving element (PD) and a sensing pixel circuit that drives the light receiving element (PD). The sensing pixel circuit may include first to third sensor transistors (PT1, PT2, PT3).

[0143] The first sensor transistor (PT1) may include a gate electrode, a first electrode, and a second electrode. The gate electrode of the first sensor transistor (PT1) may be connected to a sensor node (NS), the first electrode may be connected to a third sensor transistor (PT3), and the second electrode may be connected to a second initialization voltage line (VIL2). The first sensor transistor (PT1) can control a source-drain current (Isd, hereinafter referred to as "sensing current") based on the voltage of the sensor node (NS), which is the first electrode of the photodetector (PD). The sensing current Isd flowing through the channel of the first sensor transistor (PT1) may be proportional to the square of the difference between the voltage (Vsg) between the source electrode and the gate electrode of the first sensor transistor (PT1) and the threshold voltage (Vth) (Isd = k' × (Vsg - Vth) 2 Here, k' represents a proportionality constant determined by the structure and physical characteristics of the first sensor transistor (PT1), Vsg represents the source-gate voltage of the first sensor transistor (PT1), and Vth represents the threshold voltage of the first sensor transistor (PT1). The first electrode of the first sensor transistor (PT1) may be the source electrode and the second electrode may be the drain electrode, but is not limited thereto.

[0144] The second sensor transistor (PT2) can be turned on by a reset signal from the reset signal line (GRL) to discharge the voltage of the sensor node (NS) to the reset voltage. The gate electrode of the second sensor transistor (PT2) may be connected to the reset signal line (GRL), the first electrode may be connected to the sensor node (NS), and the second electrode may be connected to the reset voltage line (VRL). The first electrode of the second sensor transistor (PT2) may be connected to the first electrode of the photodetector (PD) and the gate electrode of the first sensor transistor (PT1) through the sensor node (NS). The first electrode of the second sensor transistor (PT2) may be the drain electrode and the second electrode may be the source electrode, but is not limited thereto.

[0145] The third sensor transistor (PT3) can be turned on by the first gate signal of the first gate line (GWL) to electrically connect the first electrode and the lead-out line (ROL) of the first sensor transistor (PT1). The third sensor transistor (PT3) may include a third-1 sensor transistor (PT3-1) and a third-2 sensor transistor (PT3-2) connected in series. The third-1 sensor transistor (PT3-1) and the third-2 sensor transistor (PT3-2) may be connected in series between the first electrode and the lead-out line (ROL) of the first sensor transistor (PT1). The gate electrode of the third-1 sensor transistor (PT3-1) and the gate electrode of the third-2 sensor transistor (PT3-2) may be formed integrally and electrically connected to the first gate line (GWL). The first electrode of the 3-1 sensor transistor (PT3-1) may be connected to the lead-out line (ROL), and the second electrode of the 3-2 sensor transistor (PT3-2) may be connected to the first electrode of the 1 sensor transistor (PT1). The second electrode of the 3-1 sensor transistor (PT3-1) and the first electrode of the 3-2 sensor transistor (PT3-2) may be formed integrally. The first electrode of each of the 3-1 sensor transistor (PT3-1) and the 3-2 sensor transistor (PT3-2) may be a source electrode and the second electrode may be a drain electrode, but is not limited thereto.

[0146] A photodetector (PD) can receive light and convert light energy into an electrical signal. The first electrode of the photodetector (PD) is connected to a sensor node (NS), which is the gate electrode of a first sensor transistor (PT1), and the second electrode can be connected to a low potential line (VSSL). The second electrode of the photodetector (PD) can receive a low potential voltage from the low potential line (VSSL). For example, the first electrode of the photodetector (PD) may be a sensor electrode and the second electrode may be a common electrode, but is not limited thereto.

[0147] When an object is positioned on the display panel (100), light emitted from the light-emitting element can be reflected by the object, and the light-receiving element can receive the reflected light. The light-receiving element (PD) can convert the energy of the light into an electrical signal (current or voltage) formed between the first electrode and the second electrode, and the converted electrical signal can flow from the low potential line (VSSL) to the sensor node (NS) as a reverse bias current. For example, when the light-receiving element (PD) receives light and an electric field is formed between the first electrode and the second electrode of the light-receiving element (PD), current can flow through the light-receiving element (PD) in proportion to the amount of light, and the voltage of the sensor node (NS) can increase. Therefore, when the light-receiving element (PD) receives light, the voltage of the sensor node (NS) can increase, and the magnitude of the sensing current (or source-drain current) of the first sensor transistor (PT1) can decrease. The sensing current of the first sensor transistor (PT1) can be applied to the display driving unit (200) as a sensing signal through the third sensor transistor (PT3) and the read-out line (ROL).

[0148] FIG. 9 is a cross-sectional view showing a detection pixel of a display device according to one embodiment.

[0149] Referring to FIG. 9 in addition to FIG. 8, the display panel (100) may include a substrate (SUB), a transistor layer (TFTL), a device layer (EML), and an encapsulation layer (TFEL). The sensing pixel (OPD) may include a sensing pixel circuit and a light receiving element (PD). The sensing pixel circuit may be placed in the transistor layer (TFTL), and the light receiving element (PD) may be placed in the device layer (EML).

[0150] The description regarding the substrate (SUB) and the encapsulation layer (TFEL) has been previously described with reference to Fig. 7, so it is omitted.

[0151] The transistor layer (TFTL) may include a buffer layer (BF), a first active layer (ACTL1), a first gate insulating layer (GI1), a first gate layer (GTL1), a second gate insulating layer (GI2), a first interlayer insulating layer (ILD1), a second active layer (ACTL2), a third gate insulating layer (GI3), a third gate layer (GTL3), a second interlayer insulating layer (ILD2), a first source metal layer (SDL1), a first via layer (VIA1), a second source metal layer (SDL2), and a second via layer (VIA2).

[0152] The description of the buffer layer (BF), the first gate insulating layer (GI1), the second gate insulating layer (GI2), the first interlayer insulating layer (ILD1), the third gate insulating layer (GI3), the second interlayer insulating layer (ILD2), the first via layer (VIA1), and the second via layer (VIA2) of the transistor layer (TFTL) is omitted as it has been described above with reference to FIG. 7.

[0153] The first active layer (ACTL1) may be disposed on the buffer layer (BF). The first active layer (ACTL1) may include a silicon-based material. For example, the first active layer (ACTL1) may be made of low-temperature polycrystalline silicon (LTPS). The first active layer (ACTL1) may include a semiconductor region (PACT1) of the first sensor transistor (PT1), a first electrode (PSE1), and a second electrode (PDE1).

[0154] The first gate layer (GTL1) may be disposed on the first gate insulating layer (GI1). The first gate layer (GTL1) may include the gate electrode (PGE1) of the first sensor transistor (PT1).

[0155] The second active layer (ACTL2) may be disposed on the first interlayer insulating layer (ILD1). The second active layer (ACTL2) may include an oxide-based material. The second active layer (ACTL2) may include a semiconductor region (PACT2) of the second sensor transistor (PT2), a first electrode (PDE2), and a second electrode (PSE2).

[0156] The third gate layer (GTL3) may be disposed on the third gate insulating layer (GI3). The third gate layer (GTL3) may include the gate electrode (PGE2) of the second sensor transistor (PT2). The gate electrode (PGE2) of the second sensor transistor (PT2) may be part of the reset signal line (GRL).

[0157] A first source metal layer (SDL1) may be disposed on a second interlayer insulating layer (ILD2). The first source metal layer (SDL1) may include a sensor connection electrode (PCE) and a first sensor node electrode (NSE1). The sensor connection electrode (PCE) may electrically connect a reset voltage line (VRL) and a second electrode (PSE2) of a second sensor transistor (PT2). The first sensor node electrode (NSE1) may electrically connect a first electrode (PDE2) of the second sensor transistor (PT2) and a gate electrode (PGE1) of the first sensor transistor (PT1).

[0158] A second source metal layer (SDL2) may be disposed on a first via layer (VIA1). The second source metal layer (SDL2) may include a reset voltage line (VRL) and a second sensor node electrode (NSE2). The second sensor node electrode (NSE2) may electrically connect the sensor electrode (PE) and the first sensor node electrode (NSE1).

[0159] The photodetector (PD) may include a sensor electrode (PE), a hole transport layer (HTL), a photodetector layer (RCL), an electron transport layer (ETL), and a common electrode (CAT). The sensor electrode (PE) may be disposed on a second via layer (VIA2) and may be disposed on the same layer as the pixel electrode (AE) of the light-emitting element (ED). The sensor electrode (PE) may overlap with one of a plurality of sensing regions (PDA) defined by a pixel defining film (PDL).

[0160] The hole transport layer (HTL) may be placed on the sensor electrode (PE) in the sensing region (PDA) and on the pixel defining film (PDL) in a region other than the sensing region (PDA). The hole transport layer (HTL) may not be separated by sensing pixel (OPD) but may be implemented as a common layer for the entire emitting pixel (PX) and the sensing pixel (OPD).

[0161] A photoreceiving layer (RCL) can be placed on a hole transport layer (HTL). The photoreceiving layer (RCL) can receive light emitted from the light-emitting region (LA) and reflected from an object. Light emitted from the light-emitting element (ED) in the light-emitting region (LA) is reflected from the object, and the reflected light can reach the photoreceiving layer (RCL). The photoreceiving element (PD) can convert the energy of the light into an electrical signal (current or voltage) formed between the sensor electrode (PE) and the common electrode (CAT), and the converted electrical signal can flow to the sensor node (NS) of FIG. 8 as a reverse bias current. For example, when the photoreceiving element (PD) receives light and an electric field is formed between the sensor electrode (PE) and the common electrode (CAT) of the photoreceiving element (PD), a current can flow to the photoreceiving element (PD) in proportion to the amount of light.

[0162] The electron transport layer (ETL) may be placed on the photoreceiving layer (RCL) in the sensing area (PDA) and on the hole transport layer (HTL) in an area other than the sensing area (PDA). The electron transport layer (ETL) may not be separated by sensing pixel (OPD) but may be implemented as a common layer for the entire emitting pixel (PX) and the sensing pixel (OPD).

[0163] The common electrode (CAT) can be placed on the electron transport layer (ETL). For example, the common electrode (CAT) can be implemented as an electrode common to the entire emitting pixel (PX) and the sensing pixel (OPD) without being separated by sensing pixel (OPD). The common electrode (CAT) can be a transparent electrode and can transmit light. The common electrode (CAT) can be electrically connected to the low potential line (VSSL) and can receive a low potential voltage, a common voltage, or a cathode voltage.

[0164] FIG. 10 is a plan view showing a part of the display area of ​​a display device according to one embodiment.

[0165] Referring to FIG. 10, the display device (10) may include a plurality of light-emitting pixels (PX). Although only one light-emitting pixel (PX) is shown in the drawing, the light-emitting pixels (PX) of FIG. 10 may be repeatedly arranged within the display area (DA).

[0166] A light-emitting pixel (PX) may include a plurality of light-emitting regions (LA). For example, a single light-emitting pixel (PX) may include a first light-emitting region (LA1), a second light-emitting region (LA2), and two third light-emitting regions (LA3). However, it is not limited thereto. The number of light-emitting regions (LA) arranged in the light-emitting pixel (PX) may vary in many ways.

[0167] A light-emitting pixel (PX) may include at least one light-emitting element (ED). In some embodiments, each light-emitting element (ED) included in the light-emitting pixel (PX) may emit the same or different colors. For example, a light-emitting element (ED) placed in a first light-emitting region (LA1) may emit a first red light, a light-emitting element (ED) placed in a second light-emitting region (LA2) may emit a second green light, and a light-emitting element (ED) placed in a third light-emitting region (LA3) may emit a third blue light. However, it is not limited thereto.

[0168] Each light-emitting region (LA) can emit light of various colors. For example, the first light-emitting region (LA1) can emit red light of the first color, the second light-emitting region (LA2) can emit green light of the second color, and the third light-emitting region (LA3) can emit blue light of the third color. However, it is not limited thereto.

[0169] In an exemplary embodiment, each light-emitting region (LA) of the display device (10) may be a region where the light-emitting layer (EL) overlaps with the pixel electrode (AE). For example, each light-emitting region (LA) may be defined by a plurality of openings of the pixel defining film (PDL).

[0170] Multiple light-emitting regions (LA) may be spaced apart from each other in a first direction (DR1) and a second direction (DR2). For example, a first light-emitting region (LA1) may be spaced apart from a third light-emitting region (LA3) in the first direction (DR1) and spaced apart from a second light-emitting region (LA2) in the second direction (DR2). A second light-emitting region (LA2) may be spaced apart from a third light-emitting region (LA3) in the first direction (DR1) and spaced apart from a second light-emitting region (LA2) in the second direction (DR2). One of the two third light-emitting regions (LA3) may be spaced apart from a first light-emitting region (LA1) in the first direction (DR1), and the other of the two third light-emitting regions (LA3) may be spaced apart from a second light-emitting region (LA2) in the first direction (DR1). Two third light-emitting regions (LA3) may be spaced apart from each other in the second direction (DR2). However, this is not limited thereto, and the arrangement of light-emitting regions (LA) within the light-emitting pixel (PX) can be varied in many ways.

[0171] In an exemplary embodiment, the area or size of each light-emitting region (LA) may differ from one another. For example, the area of ​​the third light-emitting region (LA3) may be smaller than the area of ​​the first light-emitting region (LA1) and the second light-emitting region (LA2), and the area of ​​the first light-emitting region (LA1) may be smaller than the area of ​​the second light-emitting region (LA2). The intensity of the emitted light may vary depending on the area of ​​each light-emitting region (LA), and the color tone of the screen displayed on the display device (10) or electronic device (1) can be controlled by adjusting the area of ​​each light-emitting region (LA). In FIG. 10, the area of ​​the third light-emitting region (LA3) is shown as being the smallest, but is not limited thereto. The size of each light-emitting region (LA) and the area of ​​the light-emitting region may be freely adjusted according to the color tone of the screen required by the display device (10) and electronic device (1). Additionally, the area of ​​each light-emitting region (LA) may be related to light efficiency, the lifespan of the light-emitting element (ED), etc., and may have a trade-off relationship with reflection by external light. The area of ​​each light-emitting region (LA) can be adjusted by taking into account the above factors.

[0172] The display device (10) may include a plurality of sensing pixels (OPDs). Although a single sensing pixel (OPD) is shown in the drawing, the sensing pixels (OPDs) of FIG. 10 may be repeatedly arranged within the display area (DA). The sensing pixels (OPDs) may overlap with the emitting pixels (PX) in a third direction (DR3). For example, the sensing pixels (OPDs) may be placed within the emitting pixels (PX) on a plane.

[0173] The display device (10) according to the present embodiment can implement a high-resolution display device (10) by placing a sensing pixel (OPD) within (or overlapping with) a light-emitting pixel (PX), thereby not requiring a separate area for placing the sensing pixel (OPD).

[0174] A sensing pixel (OPD) may include at least one sensing area (PDA). The sensing area (PDA) may receive light emitted from a light-emitting area (LA) and reflected by an object. One sensing area (PDA) may include at least one light-receiving element (PD). In some embodiments, the light-receiving element (PD) may receive light of an infrared wavelength.

[0175] In an exemplary embodiment, the sensing area (PDA) of the display device (10) may be an area where the light receiving layer (RCL) overlaps with the sensor electrode (PE). For example, the sensing area (PDA) may be defined by a plurality of openings of the pixel defining film (PDL).

[0176] A sensing area (PDA) may be surrounded by light-emitting areas (LA). The sensing area (PDA) may be spaced apart from and arranged alongside the light-emitting areas (LA) in a first direction (DR1) and a second direction (DR2). For example, the sensing area (PDA) may be arranged between the third light-emitting areas (LA3) in the second direction (DR2).

[0177] The area of ​​the sensing area (PDA) may differ from the area of ​​the light-emitting area (LA). For example, the area of ​​the sensing area (PDA) may be smaller than the area of ​​the light-emitting area (LA). The light-emitting area (LA) may have a larger area to improve the light emission rate, and the sensing area (PDA) may have a smaller area but be densely arranged to improve sensing accuracy. However, it is not limited thereto.

[0178] In the drawing, one sensing area (PDA) is depicted as being placed between four light-emitting areas (LA), but is not limited thereto. More sensing areas (PDA) may be placed between the light-emitting areas (LA).

[0179] In the drawings, the light-emitting regions (LA) and the sensing regions (PDA) are depicted as circular in a planar shape, but are not limited thereto. The shapes of the light-emitting regions (LA) and the sensing regions (PDA) can be varied in many ways, such as polygonal or elliptical.

[0180] The display device (10) according to the present embodiment may include a light conversion pattern (QDP) disposed around a light-emitting region (LA) and a sensing region (PDA). For example, the light conversion pattern (QDP) may be disposed to surround a third light-emitting region (LA3) on a plane, and the light conversion patterns (QDP) may be located on opposite sides of each other with the sensing region (PDA) in between in a second direction (DR2).

[0181] The light conversion pattern (QDP) can convert the wavelength of light emitted from the emission region (LA). For example, the light conversion pattern (QDP) can convert visible light of a blue wavelength emitted from the third emission region (LA3) into infrared light. The light of the infrared wavelength converted by the light conversion pattern (QDP) can be sensed by the photodetector (PD) of the sensing region (PDA).

[0182] In some embodiments, the light conversion pattern (QDP) may be donut or ring-shaped. For example, the light conversion pattern (QDP) may include an opening (OPT_Q) located approximately in the center of the light conversion pattern (QDP). The planar size or area of ​​the opening (OPT_Q) may be larger than the planar size or area of ​​the third light-emitting region (LA3). That is, the inner side of the light conversion pattern (QDP) may be located outside the perimeter of the third light-emitting region (LA3).

[0183] As illustrated in FIG. 10, the light-emitting pixel (PX) of the display area (DA) may include a first area (CFA1) and a second area (CFA2). The first area (CFA1) may be an area where the first light-emitting area (LA1) and the second light-emitting area (LA2) are placed, and the second area (CFA2) may be an area where the third light-emitting area (LA3) and the sensing area (PDA) are placed. In some embodiments, the light conversion pattern (QDP) may not be placed in the first area (CFA1), and the light conversion pattern (QDP) may be placed in the second area (CFA2).

[0184] FIG. 11 is a cross-sectional view taken along X1-X1' of FIG. 10. FIG. 12 is a cross-sectional view taken along X2-X2' of FIG. 10.

[0185] Referring to FIG. 11 and FIG. 12 in addition to FIG. 10, the display device (10) may include a substrate (SUB), a transistor layer (TFTL), a device layer (EML), an encapsulation layer (TFEL), a touch sensing layer (TSU), and an optical layer (OPL).

[0186] As the substrate (SUB) and transistor layer (TFTL) have been described above with reference to Figs. 7 and 9, etc., they will be omitted.

[0187] The device layer (EML) may be disposed on the transistor layer (TFTL). The device layer (EML) may include a light-emitting element (ED), a light-receiving element (PD), and a pixel defining layer (PDL). The light-emitting element (ED) and the light-receiving element (PD) may be disposed in a light-emitting region (LA) and a sensing region (PDA), respectively, defined by the pixel defining layer (PDL). For example, the pixel defining layer (PDL) may include a plurality of openings defining the light-emitting region (LA) and the sensing region (PDA).

[0188] A light-emitting region (LA) may include a light-emitting element (ED). For example, a first light-emitting region (LA1) may include a light-emitting element (ED) including a first pixel electrode (AE1), a second light-emitting region (LA2) may include a light-emitting element (ED) including a second pixel electrode (AE2), and a third light-emitting region (LA3) may include a light-emitting element (ED) including a third pixel electrode (AE3). The light-emitting element (ED) may include pixel electrodes (AE1, AE2, AE3), a light-emitting layer (EL), and a common electrode (CAT).

[0189] The sensing area (PDA) may include a light receiving element (PD). The light receiving element (PD) may include a sensor electrode (PE), a light receiving layer (RCL), and a common electrode (CAT).

[0190] The first pixel electrode (AE1), the second pixel electrode (AE2), the third pixel electrode (AE3), and the sensor electrode (PE) may be arranged corresponding to the first to third light-emitting regions (LA1, LA2, LA3) and the sensing region (PDA), respectively. The light-emitting layer (EL) and the light-receiving layer (RCL) may be arranged corresponding to the first to third light-emitting regions (LA1, LA2, LA3) and the sensing region (PDA), respectively. The common electrode (CAT) may be arranged commonly without distinction between the first to third light-emitting regions (LA1, LA2, LA3) and the sensing region (PDA).

[0191] The encapsulation layer (TFEL) is disposed on a common electrode (CAT) and can cover a plurality of light-emitting elements (ED) and a plurality of light-receiving elements (PD). The encapsulation layer (TFEL) may include at least one inorganic film to prevent oxygen or moisture from penetrating into the device layer (EML). The encapsulation layer (TFEL) may include at least one organic film to protect the device layer (EML) from foreign substances such as dust.

[0192] In an exemplary embodiment, the encapsulation layer (TFEL) may include a first encapsulation layer (TFE1), a second encapsulation layer (TFE2), and a third encapsulation layer (TFE3). The first encapsulation layer (TFE1) and the third encapsulation layer (TFE3) are inorganic encapsulation layers, and the second encapsulation layer (TFE2) disposed between them may be an organic encapsulation layer.

[0193] The first encapsulation layer (TFE1) and the third encapsulation layer (TFE3) may each include one or more inorganic insulating materials. The inorganic insulating materials may include aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and / or silicon oxynitride.

[0194] The second encapsulation layer (TFE2) may include a polymer-based material. Polymer-based materials may include acrylic resins, epoxy resins, polyimide, and polyethylene. For example, the second encapsulation layer (TFE2) may include an acrylic resin, such as polymethyl methacrylate or polyacrylic acid. The second encapsulation layer (TFE2) may be formed by curing a monomer or by applying a polymer.

[0195] A touch sensing layer (TSU) may be disposed on an encapsulation layer (TFEL). The touch sensing layer (TSU) may include a first touch insulating layer (SIL1), a second touch insulating layer (SIL2), a touch electrode (TL), and a third touch insulating layer (SIL3).

[0196] The first touch insulating layer (SIL1) may be disposed on the encapsulation layer (TFEL). The first touch insulating layer (SIL1) may have insulating and optical functions. The first touch insulating layer (SIL1) may include at least one inorganic film. Optionally, the first touch insulating layer (SIL1) may be omitted.

[0197] The second touch insulating layer (SIL2) may cover the first touch insulating layer (SIL1). Although not shown in the drawings, another layer of touch electrodes may be further disposed on the first touch insulating layer (SIL1), and the second touch insulating layer (SIL2) may cover the touch electrodes disposed on the first touch insulating layer (SIL1). The second touch insulating layer (SIL2) may have insulating and optical functions. For example, the second touch insulating layer (SIL2) may be an inorganic film comprising at least one of a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer.

[0198] A touch electrode (TL) may be disposed on a second touch insulating layer (SIL2). Each touch electrode (TL) may not overlap with a light-emitting element (ED) and a light-receiving element (PD). For example, a touch electrode (TL) may overlap with a pixel defining film (PDL). Each touch electrode (TL) may be formed as a single layer of molybdenum (Mo), titanium (Ti), copper (Cu), aluminum (Al), or indium tin oxide (ITO), or as a stacked structure of aluminum and titanium (Ti / Al / Ti), a stacked structure of aluminum and ITO (ITO / Al / ITO), an APC alloy, and a stacked structure of APC alloy and ITO (ITO / APC / ITO).

[0199] The third touch insulating layer (SIL3) may cover the touch electrode (TL) and the second touch insulating layer (SIL2). The third touch insulating layer (SIL3) may have insulating and optical functions. The third touch insulating layer (SIL3) may be made of the material exemplified in the second touch insulating layer (SIL2). In another embodiment, the third touch insulating layer (SIL3) may include an organic insulating material such as polyimide.

[0200] An optical layer (OPL) may be disposed on a touch sensing layer (TSU). The optical layer (OPL) may include a light conversion layer (QDL), a color filter layer (CFL), and an overcoat layer (OC).

[0201] The light conversion layer (QDL) may include a light conversion pattern (QDP) and a light blocking film (BSC).

[0202] The light conversion pattern (QDP) can convert the wavelength of light emitted from the light-emitting element (ED) and re-emit the converted light. For example, the light conversion pattern (QDP) can convert visible light (e.g., blue light) emitted from the third light-emitting region (LA3) into infrared light.

[0203] The light conversion pattern (QDP) may include a base resin and a wavelength conversion material. The base resin may include a transparent organic material. For example, the base resin may be composed of an epoxy resin, an acrylic resin, a cardo resin, or an imide resin. The wavelength conversion material may be a quantum dot, a quantum rod, a phosphor, etc. The quantum dots may include a group IV nanocrystal, a group II-VI compound nanocrystal, a group III-V compound nanocrystal, a group IV-VI nanocrystal, or a combination thereof. The light conversion pattern (QDP) may further include a scatterer that increases wavelength conversion efficiency.

[0204] The light conversion pattern (QDP) may not overlap with the light-emitting element (ED) and the light-receiving element (PD) in the third direction (DR3). For example, the light conversion pattern (QDP) may overlap with the pixel defining film (PDL) and the touch electrode (TL) in the third direction (DR3).

[0205] The aperture (OPT_Q) of the light conversion pattern (QDP) can overlap with the light-emitting element (ED). For example, the aperture (OPT_Q) of the light conversion pattern (QDP) can overlap with the third light-emitting region (LA3).

[0206] An infrared region (IRA) may be placed between the apertures (OPT_Q) of the light conversion pattern (QDP) in the second direction (DR2). The infrared region (IRA) may be an area where light emitted from a light-emitting element (ED) is converted into infrared light by the light conversion pattern (QDP) and infrared light is emitted. The infrared region (IRA) may overlap with the sensing region (PDA) in the third direction (DR3).

[0207] In some embodiments, the second direction (DR2) distance (D1) between one end of the light conversion pattern (QDP) adjacent to the third light-emitting region (LA3) and the third light-emitting region (LA3) may be smaller than the second direction (DR2) distance (D2) between the other end of the light conversion pattern (QDP) adjacent to the detection region (PDA) and the detection region (PDA). That is, in the plane illustrated in FIG. 10, the second direction (DR2) distance between the perimeter of the third light-emitting region (LA3) and the perimeter of the opening (OPT_Q) of the light conversion pattern (QDP) may be smaller than the second direction (DR2) distance between the detection region (PDA) and the light conversion pattern (QDP).

[0208] The light blocking film (BSC) may include a light-absorbing material. For example, the light blocking film (BSC) may include an inorganic black pigment or an organic black pigment. The inorganic black pigment may be carbon black, and the organic black pigment may include at least one of lactam black, perylene black, and aniline black, but is not limited thereto. In some embodiments, the light blocking film (BSC) may absorb light of visible wavelengths and transmit light of infrared wavelengths.

[0209] The light blocking screen (BSC) can prevent light emitted from the light-emitting element (ED) from being emitted from the light-converting pattern (QDP) in its original wavelength state without being converted by the light-converting pattern (QDP) and from being incident on the sensing area (PDA).

[0210] A light blocking screen (BSC) can be placed at the edge of a light conversion pattern (QDP) adjacent to a sensing area (PDA). For example, as shown in FIG. 12, a light blocking screen (BSC) placed to the left of the sensing area (PDA) can be placed at the right edge of the light conversion pattern (QDP), and a light blocking screen (BSC) placed to the right of the sensing area (PDA) can be placed at the left edge of the light conversion pattern (QDP).

[0211] A color filter layer (CFL) may be disposed on a touch sensing layer (TSU) and a light conversion layer (QDL). The color filter layer (CFL) may include a first color filter (CF1), a second color filter (CF2), and a third color filter (CF3).

[0212] The first to third color filters (CF1, CF2, CF3) may include a colorant, such as a dye or pigment, that absorbs light of a wavelength other than that of a specific wavelength, and may be positioned in correspondence with the color of light emitted by a light-emitting element including a light-emitting region (LA). For example, the first color filter (CF1) may be a red color filter positioned to overlap with the first light-emitting region (LA1) and transmit only red light. The second color filter (CF2) may be a green color filter positioned to overlap with the second light-emitting region (LA2) and transmit only green light, and the third color filter (CF3) may be a blue color filter positioned to overlap with the third light-emitting region (LA3) and transmit only blue light.

[0213] At least a portion of the third color filter (CF3) may be placed in the infrared region (IRA). Accordingly, in order to increase the amount of infrared light incident on the photodetector (PD), in some embodiments, the at least portion of the third color filter (CF3) may have a high transmittance for infrared light.

[0214] Each of the first to third color filters (CF1, CF2, CF3) may be arranged corresponding to a plurality of light-emitting regions (LA). At least a portion of each of the plurality of color filters (CF1, CF2, CF3) may overlap with the plurality of light-emitting regions (LA). For example, at least a portion of the first color filter (CF1) may overlap with the first light-emitting region (LA1), at least a portion of the second color filter (CF2) may overlap with the second light-emitting region (LA2), and at least a portion of the third color filter (CF3) may overlap with the third light-emitting region (LA3).

[0215] The color filter layer (CFL) may include a first transmission area (OPA1), a second transmission area (OPA2), a third transmission area (OPA3), and a light-blocking area (BMA).

[0216] The first transmission area (OPA1) may be an area where only the first color filter (CF1) is placed and the second color filter (CF2) and the third color filter (CF3) are not placed. The second transmission area (OPA2) may be an area where only the second color filter (CF2) is placed and the first color filter (CF1) and the third color filter (CF3) are not placed. The third transmission area (OPA3) may be an area where only the third color filter (CF3) is placed and the first color filter (CF1) and the second color filter (CF2) are not placed. The light-blocking area (BMA) may be an area where the first to third color filters (CF1, CF2, CF3) are all placed in an overlapping manner.

[0217] A first transmission region (OPA1) may overlap with a first emission region (LA1) and transmit only red first light. A second transmission region (OPA2) may overlap with a second emission region (LA2) and transmit only green second light. A third transmission region (OPA3) may overlap with a third emission region (LA3) and transmit only blue third light. In some embodiments, the third transmission region (OPA3) may overlap with an aperture (OPT_Q) of a light conversion pattern (QDP).

[0218] A first transmission area (OPA1), a second transmission area (OPA2), and a light-blocking area (BMA) may be placed in the first area (CFA1), and a third transmission area (OPA3) and an infrared area (IRA) may be placed in the second area (CFA2).

[0219] In some embodiments, a light conversion pattern (QDP) (or light conversion layer (QDL)) may not be disposed in the first region (CFA1). On the other hand, a light conversion pattern (QDP) (or light conversion layer (QDL)) may be disposed in the second region (CFA2).

[0220] Accordingly, in the first region (CFA1), the touch sensing layer (TSU) can directly contact the color filter layer (CFL) (e.g., the first color filter (CF1) and the second color filter (CF2)), and in the second region (CFA2), the touch sensing layer (TSU) can directly contact the color filter layer (CFL) (e.g., the third color filter (CF3)) and the light conversion layer (QDL) (e.g., the light conversion pattern (QDP)).

[0221] An overcoat layer (OC) may be placed on a color filter layer (CFL). The overcoat layer (OC) may be placed across the entire front surface of a display area (DA) to flatten the upper surface of the display panel (100). The overcoat layer (OC) may be a colorless, transparent layer that does not have a color in the visible light band. For example, the overcoat layer (OC) may include, but is not limited to, a colorless, transparent organic material such as an acrylic resin. In some embodiments, the overcoat layer (OC) may have a high transmittance for infrared light.

[0222] Referring to FIG. 13, the operation method of the display device (10) will be explained.

[0223] FIG. 13 is a cross-sectional view showing the operation of a display device according to an embodiment of FIG. 10.

[0224] Referring to FIG. 13 in addition to FIG. 10 to 12, the first visible light (LGT0) emitted from the third light-emitting region (LA3) can be emitted to the outside through the third transmission region (OPA3). For example, the first visible light (LGT0) emitted from the third light-emitting region (LA3) may be blue light and may be emitted to the outside by passing through the third color filter (CF3), which is a blue color filter.

[0225] The second visible light (LGT1) emitted from the third emission region (LA3) can be incident on the light conversion pattern (QDP). A portion of the second visible light (LGT1) can be converted into first infrared light (LGT2) by the light conversion pattern (QDP). The first infrared light (LGT2) can be reflected by an object (OBJ) located in the infrared region (IRA). The first infrared light (LGT2) reflected by the object (OBJ) can be incident on the sensing region (PDA) and sensed.

[0226] Some of the second visible light (LGT1) may be incident on the light conversion pattern (QDP) but may not be converted into infrared light. In this case, the unconverted third visible light (LGT3) may be blocked by the light blocking screen (BSC) and may not be incident on the detection area (PDA).

[0227] Meanwhile, some of the first infrared light (LGT2) converted by the light conversion pattern (QDP) may be emitted outward without being reflected by the object (OBJ), and since the first infrared light (LGT2) is infrared rather than visible light, it may not be visible to the user.

[0228] The display device (10) according to the present embodiment includes a light receiving element (PD) capable of sensing infrared light, thereby enabling the sensing function to be performed using light that is not visible to the user. Additionally, since sensing is performed using infrared light, there is less noise than when using visible light, so the sensing accuracy can be improved.

[0229] Meanwhile, the display device (10) according to the present embodiment includes a light conversion layer (QDL), thereby not having a separate infrared light-emitting element, and can use a visible light-emitting element included in the light-emitting pixel (PX) of the display device (10) as a light source. Therefore, since there is no need to provide an area for a separate infrared light-emitting element, a high-resolution display device (10) can be implemented.

[0230] Hereinafter, other embodiments of a display device according to one embodiment are described. In the following embodiments, components identical to those in the previously described embodiment are referred to by the same reference numerals, and redundant descriptions are omitted or simplified, with the focus on the differences.

[0231] FIG. 14 is a cross-sectional view taken along X1-X1' of FIG. 10 in a display device according to another embodiment. FIG. 15 is a cross-sectional view taken along X2-X2' of FIG. 10 in a display device according to another embodiment.

[0232] With reference to FIG. 14 and FIG. 15 in addition to FIG. 10, the display device (10) according to the present embodiment is different from the display device (10) according to the embodiment described with reference to FIG. 10, etc., in that the optical layer (OPL) further includes a light-blocking layer (BM).

[0233] More specifically, the optical layer (OPL) may further include a flattening layer (PSV) and a light-blocking layer (BM).

[0234] A flattening layer (PSV) may be placed on a color filter layer (CFL). The flattening layer (PSV) may be placed across the entire front surface of a display area (DA) to flatten the upper surface of the color filter layer (CFL). The flattening layer (PSV) may be a colorless transparent layer that does not have color in the visible light band. For example, the flattening layer (PSV) may include, but is not limited to, a colorless transparent organic material such as an acrylic resin. In some embodiments, the flattening layer (PSV) may have a high transmittance for infrared light.

[0235] A light-blocking layer (BM) may be disposed on a flattening layer (PSV). The light-blocking layer (BM) may include a light-absorbing material. For example, the light-blocking layer (BM) may include an inorganic black pigment or an organic black pigment. The inorganic black pigment may be carbon black, and the organic black pigment may include at least one of lactam black, perylene black, and aniline black, but is not limited thereto. In some embodiments, the light-blocking layer (BM) may absorb light of visible wavelengths and transmit light of infrared wavelengths.

[0236] The light-blocking layer (BM) may include light-blocking patterns, and the light-blocking patterns may overlap with the pixel defining layer (PDL) and the light conversion pattern (QDP). The light-blocking layer (BM) may include light-transmitting openings disposed between the light-blocking patterns, and the light-transmitting openings may overlap with the first to third transmission regions (OPA1, OPA2, OPA3). The light-transmitting openings may overlap with the light-emitting element (ED) and the light-receiving element (PD).

[0237] Meanwhile, in this embodiment, the overcoat layer (OC) can be placed on the light-blocking layer (BM) and the flattening layer (PSV).

[0238] The display device (10) according to the present embodiment further includes a light-blocking layer (BM) to prevent color mixing and noise between adjacent light-emitting areas (LA) and sensing areas (PDA).

[0239] FIG. 16 is a plan view showing a portion of the display area of ​​a display device according to another embodiment. FIG. 17 is a cross-sectional view taken along X3-X3' of FIG. 16. FIG. 18 is a cross-sectional view showing the operation of a display device according to the embodiment of FIG. 16.

[0240] Referring to FIGS. 16 to 18, the display device (10) according to the present embodiment is different from the display device (10) according to the embodiment described with reference to FIG. 10, etc., in that the arrangement of the light conversion pattern (QDP) and the sensing area (PDA) is different.

[0241] More specifically, the sensing area (PDA) may be surrounded by light-emitting areas (LA). The sensing area (PDA) may be spaced apart from the light-emitting areas (LA) in a diagonal direction defined by a first direction (DR1) and a second direction (DR2). For example, the sensing area (PDA) may be positioned on one side of the second light-emitting area (LA2) in a diagonal direction defined by the first direction (DR1) and the second direction (DR2), and may be positioned on one side of the third light-emitting area (LA3) in a diagonal direction defined by the opposite direction of the first direction (DR1) and the opposite direction of the second direction (DR2), and may be positioned on one side of the first light-emitting area (LA1) in a diagonal direction defined by the opposite direction of the first direction (DR1) and the second direction (DR2), and may be positioned on one side of the third light-emitting area (LA3) in a diagonal direction defined by the opposite direction of the first direction (DR1) and the second direction (DR2).

[0242] The light conversion pattern (QDP) may include a first light conversion pattern (QDP1), a second light conversion pattern (QDP2), and a third light conversion pattern (QDP3). The first light conversion pattern (QPD1) may surround a first light-emitting region (LA1), the second light conversion pattern (QPD2) may surround a second light-emitting region (LA2), and the third light conversion pattern (QPD3) may surround a third light-emitting region (LA3).

[0243] The first light conversion pattern (QDP1) can convert visible light of a red wavelength emitted from the first light-emitting region (LA1) into infrared light, the second light conversion pattern (QDP2) can convert visible light of a green wavelength emitted from the second light-emitting region (LA2) into infrared light, and the third light conversion pattern (QDP3) can convert visible light of a blue wavelength emitted from the third light-emitting region (LA3) into infrared light. The light of infrared wavelengths converted by the first to third light conversion patterns (QDP1, QDP2, QDP3) can be sensed by a light-receiving element (PD) of the sensing region (PDA).

[0244] A first light conversion pattern (QDP1) may include a first opening (OPT_Q1) located approximately in the center of the first light conversion pattern (QDP1), a second light conversion pattern (QDP2) may include a second opening (OPT_Q2) located approximately in the center of the second light conversion pattern (QDP2), and a third light conversion pattern (QDP3) may include a third opening (OPT_Q3) located approximately in the center of the third light conversion pattern (QDP3).

[0245] The planar size or area of ​​the first opening (OPT_Q1) may be larger than the planar size or area of ​​the first light-emitting region (LA1). The planar size or area of ​​the second opening (OPT_Q2) may be larger than the planar size or area of ​​the second light-emitting region (LA2). The planar size or area of ​​the third opening (OPT_Q3) may be larger than the planar size or area of ​​the third light-emitting region (LA3).

[0246] The inner edge of the first light conversion pattern (QDP1) may be located outside the perimeter of the first light emission region (LA1). The inner edge of the second light conversion pattern (QDP2) may be located outside the perimeter of the second light emission region (LA2). The inner edge of the third light conversion pattern (QDP3) may be located outside the perimeter of the third light emission region (LA3).

[0247] The light conversion layer (QDL) may include first to third light conversion patterns (QDP1, QDP2, QDP3).

[0248] The first to third light conversion patterns (QDP1, QDP2, QDP3) may not overlap with the light-emitting element (ED) and the light-receiving element (PD) in the third direction (DR3). For example, the first to third light conversion patterns (QDP1, QDP2, QDP3) may overlap with the pixel defining film (PDL) and the touch electrode (TL) in the third direction (DR3).

[0249] The first opening (OPT_Q1) of the first light conversion pattern (QDP1) can overlap with the first light emission region (LA1), the second opening (OPT_Q2) of the second light conversion pattern (QDP2) can overlap with the second light emission region (LA2), and the third opening (OPT_Q3) of the third light conversion pattern (QDP3) can overlap with the third light emission region (LA3).

[0250] An infrared region (IRA) may be disposed between the first aperture (OPT_Q1) of the first light conversion pattern (QDP1) and the third aperture (OPT_Q3) of the third light conversion pattern (QDP3). Although not shown in the drawing, the infrared region (IRA) may also be disposed between the second aperture (OPT_Q2) of the second light conversion pattern (QDP2) and the third aperture (OPT_Q3) of the third light conversion pattern (QDP3). The infrared region (IRA) may be an area where light emitted from a light-emitting element (ED) is converted into infrared light by the first to third light conversion patterns (QDP1, QDP2, QDP3) and infrared light is emitted. The infrared region (IRA) may overlap with the detection region (PDA) in the third direction (DR3).

[0251] A light blocking film (BSC) may be placed at the edge of a light conversion pattern (QDP) adjacent to a sensing area (PDA). For example, as shown in FIG. 17, a light blocking film (BSC) placed to the left of the sensing area (PDA) may be placed at the right edge of a third light conversion pattern (QDP3), and a light blocking film (BSC) placed to the right of the sensing area (PDA) may be placed at the left edge of a first light conversion pattern (QDP1).

[0252] In the infrared region (IRA), first to third color filters (CF1, CF2, CF3) may be stacked and arranged. Accordingly, in the infrared region (IRA), visible light cannot be emitted, and only infrared light can be emitted. In order to increase the amount of infrared light incident on the photodetector (PD), in some embodiments, the first to third color filters (CF1, CF2, CF3) may have a high transmittance for infrared light.

[0253] In some embodiments, the first transmission region (OPA1) may overlap with the first opening (OPT_Q1) of the first light conversion pattern (QDP1), and the third transmission region (OPA3) may overlap with the third opening (OPT_Q3) of the third light conversion pattern (QDP3). Although not shown in the drawings, the second transmission region (OPA2) may overlap with the second opening (OPT_Q2) of the second light conversion pattern (QDP2).

[0254] As illustrated in FIG. 18, the first visible light (LGT0) emitted from the first light-emitting region (LA1) and the third light-emitting region (LA3), respectively, can be emitted to the outside through the first transmission region (OPA1) and the third transmission region (OPA3). For example, the first visible light (LGT0) emitted from the first light-emitting region (LA1) may be red light and may be emitted to the outside by passing through the first color filter (CF1), which is a red color filter, and the first visible light (LGT0) emitted from the third light-emitting region (LA3) may be blue light and may be emitted to the outside by passing through the third color filter (CF3), which is a blue color filter.

[0255] The second visible light (LGT1) emitted from the third light-emitting region (LA3) can be incident on the third light-converting pattern (QDP3). A portion of the second visible light (LGT1) can be converted into first infrared light (LGT2) by the third light-converting pattern (QDP3). The first infrared light (LGT2) can be reflected by an object (OBJ) located in the infrared region (IRA). The first infrared light (LGT2) reflected by the object (OBJ) can be incident on the sensing region (PDA) and sensed.

[0256] Some of the second visible light (LGT1) may be incident on the third light conversion pattern (QDP3) but may not be converted into infrared light. In this case, the unconverted third visible light (LGT3) may be blocked by the light blocking screen (BSC) and may not be incident on the detection area (PDA).

[0257] The fourth visible light (LGT4) emitted from the first light-emitting region (LA1) can be incident on the first light conversion pattern (QDP1). A portion of the fourth visible light (LGT4) can be converted into second infrared light (LGT5) by the first light conversion pattern (QDP1). The second infrared light (LGT5) can be reflected by an object (OBJ) located in the infrared region (IRA). The second infrared light (LGT5) reflected by the object (OBJ) can be incident on the sensing region (PDA) and sensed.

[0258] Some of the fourth visible light (LGT4) may be incident on the first light conversion pattern (QDP1) but may not be converted into infrared light. In this case, the unconverted fifth visible light (LGT6) may be blocked by the light blocking screen (BSC) and may not be incident on the detection area (PDA).

[0259] Meanwhile, some of the first infrared light (LGT2) converted by the first and third light conversion patterns (QDP1, QDP3) may be emitted outward without being reflected by the object (OBJ), and since the first infrared light (LGT2) is infrared rather than visible light, it may not be visible to the user.

[0260] Alternatively, visible light that is not incident on the first and third light conversion patterns (QDP1, QDP3) may be blocked by the first to third color filters (CF1, CF2, CF3) located in the infrared region (IRA) and may not be visible to the user.

[0261] The display device (10) according to the present embodiment includes a light receiving element (PD) capable of sensing infrared light, thereby enabling the sensing function to be performed using light that is not visible to the user. Additionally, since sensing is performed using infrared light, there is less noise than when using visible light, so the sensing accuracy can be improved.

[0262] Meanwhile, the display device (10) according to the present embodiment includes a light conversion layer (QDL), thereby not having a separate infrared light-emitting element, and can use a visible light-emitting element included in the light-emitting pixel (PX) of the display device (10) as a light source. Therefore, since there is no need to provide an area for a separate infrared light-emitting element, a high-resolution display device (10) can be implemented.

[0263] The display device (10) according to the above-described embodiments can be applied to various electronic devices (1). An electronic device (1) according to one embodiment includes the above-described display device (10) and may further include a module or device having additional functions other than the display device (10).

[0264] FIG. 19 is a block diagram of an electronic device according to one embodiment.

[0265] Referring to FIG. 19, an electronic device (1) according to one embodiment may include a display module (11), a processor (12), a memory (13), and a power module (14).

[0266] The processor (12) may include at least one of a central processing unit (CPU), an application processor (AP), a graphic processing unit (GPU), a communication processor (CP), an image signal processor (ISP), and a controller.

[0267] The memory (13) may store data information necessary for the operation of the processor (12) or the display module (11). When the processor (12) executes an application stored in the memory (13), an image data signal and / or an input control signal are transmitted to the display module (11), and the display module (11) can process the received signal and output image information through a display screen.

[0268] The power module (14) may include a power supply module, such as a power adapter or battery device, and a power conversion module that converts the power supplied by the power supply module to generate power required for the operation of the electronic device (1).

[0269] At least one of each component of the electronic device (1) described above may be included in the display device (10) according to the embodiments described above. Additionally, some of the individual modules functionally included in one module may be included in the display device (10), while others may be provided separately from the display device (10). For example, the display device (10) may include a display module (11), and the processor (12), memory (13), and power module (14) may be provided in the form of other devices within the electronic device (1) other than the display device (10).

[0270] FIG. 20 is a schematic diagram of an electronic device according to various embodiments.

[0271] Referring to FIG. 20, various electronic devices (1) to which a display device (10) according to embodiments is applied may include not only image display electronic devices (1) such as a smartphone (1_1a), tablet PC (1_1b), laptop (1_1c), TV (1_1d), and desk monitor (1_1e), but also wearable electronic devices (1) including display modules such as smart glasses (1_2a), head-mounted display (1_2b), and smart watch (1_2c), and automotive electronic devices (1_3) including display modules such as a CID (Center Information Display) and room mirror display placed on the instrument panel, center fascia, and dashboard of a car.

[0272] Although embodiments of the present invention have been described above with reference to the attached drawings, those skilled in the art will understand that the present invention may be implemented in other specific forms without changing the technical concept or essential features thereof. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive. Explanation of the symbols

[0273] 1: Electronic device 10: Display device 100: Display panel OPL: Optical layer QDL: Optical conversion layer CFL: Color filter layer LA: Emissive region PDA: Detection area QDP: Optical conversion pattern OPT_Q: opening BSC: Light Blocker IRA: Infrared region OPA1, OPA2, OPA3: 1st to 3rd transmission regions BMA: Shading area

Claims

Claim 1 A display device comprising: a substrate; a circuit layer disposed on the substrate; a device layer disposed on the circuit layer and including a light-emitting element emitting a first light having a first wavelength, a light-receiving element sensing a second light having a second wavelength, and a pixel defining film separating the light-emitting element and the light-receiving element; and a light conversion layer disposed on the device layer and including a light conversion pattern overlapping with the pixel defining film, wherein the light conversion pattern is configured to convert the first light emitted from the light-emitting element into the second light, and the light-receiving element is configured to sense the second light converted by the light conversion pattern. Claim 2 In claim 1, the light conversion pattern is a display device arranged to surround the light-emitting element on a plane. Claim 3 In claim 1, at least a portion of the light conversion pattern is a display device disposed between the light-emitting element and the light-receiving element on a plane. Claim 4 In claim 1, the light conversion pattern is a display device including an opening that overlaps with the light-emitting element. Claim 5 In paragraph 4, a display device in which the planar size or area of ​​the opening is larger than the size or area of ​​the light-emitting element. Claim 6 A display device according to claim 4, further comprising a color filter disposed on the light conversion layer and transmitting the first light, wherein a first portion, which is at least a part of the color filter, overlaps with the aperture and the light-emitting element. Claim 7 In claim 6, a second portion, which is another at least part of the color filter, overlaps with the light-receiving element, and the second portion transmits the second light. Claim 8 A display device according to claim 1, wherein the distance between one end of the light conversion pattern and the light-emitting element is smaller than the distance between the other end of the light conversion pattern and the light-receiving element. Claim 9 In claim 1, the light conversion layer includes a light blocking film that absorbs or blocks the first light, and the light blocking film is disposed at one end of the light conversion pattern adjacent to the light receiving element. Claim 10 A display device according to claim 1, wherein the light conversion pattern comprises a base resin and a wavelength conversion material, and the wavelength conversion material comprises at least one of a quantum dot, a quantum rod, and a phosphor. Claim 11 A display device according to claim 1, further comprising a light-blocking layer disposed on the light-converting layer and including light-transmitting openings, wherein the light-transmitting openings overlap with the light-emitting element and the light-receiving element. Claim 12 A display device according to claim 1, wherein the first light is visible light and the second light is infrared light. Claim 13 A display device comprising: a substrate; a circuit layer disposed on the substrate; a first light-emitting element disposed on the circuit layer and emitting a first light having a first wavelength, a second light-emitting element emitting a second light having a second wavelength, a third light-emitting element emitting a third light having a third wavelength, a light-receiving element sensing a fourth light having a fourth wavelength, and a pixel defining film partitioning the first to third light-emitting elements and the light-receiving element; and a light-conversion layer disposed on the device layer and including a first light-conversion pattern that overlaps with the pixel defining film, wherein the first light-conversion pattern is disposed to surround the first light-emitting element on a plane, the first light-conversion pattern is configured to convert the first light emitted from the first light-emitting element into the fourth light, and the light-receiving element is configured to sense the fourth light converted by the first light-conversion pattern. Claim 14 A display device according to claim 13, wherein the light conversion layer further comprises at least one of a second light conversion pattern and a third light conversion pattern that overlaps with the pixel defining film, wherein the second light conversion pattern is arranged to surround the second light-emitting element on a plane and the third light conversion pattern is arranged to surround the third light-emitting element on a plane, wherein the second light conversion pattern is configured to convert the second light emitted from the second light-emitting element into the fourth light, and the third light conversion pattern is configured to convert the third light emitted from the third light-emitting element into the fourth light, and the light receiving element is configured to sense the fourth light converted by at least one of the second light conversion pattern and the third light conversion pattern. Claim 15 In claim 14, the first to third light conversion patterns each include a first to third opening that overlaps with the first to third light-emitting elements, forming a display device. Claim 16 A display device according to claim 14, further comprising a first color filter that transmits the first light, a second color filter that transmits the second light, and a third color filter that transmits the third light, wherein at least a portion of each of the first to third color filters overlaps with the light receiving element. Claim 17 A display device according to claim 13, comprising: a first region in which the first light-emitting element and the light-receiving element are disposed; and a second region in which the second light-emitting element and the third light-emitting element are disposed, wherein the first light conversion pattern is disposed only in the first region and not in the second region. Claim 18 A display device according to claim 17, further comprising a first color filter that transmits the first light, a second color filter that transmits the second light, and a third color filter that transmits the third light, wherein in the first region, the first color filter overlaps with the first light-emitting element and the light-receiving element, and in the second region, the second color filter overlaps with the second light-emitting element and the third color filter overlaps with the third light-emitting element. Claim 19 A display device according to claim 13, wherein the first to third lights are visible light and the fourth light is infrared. Claim 20 An electronic device comprising: a display device for displaying an image; a processor for providing an image driving signal to the display device; and a power module for supplying power to the display device and the processor, wherein the display device comprises: a substrate; a circuit layer disposed on the substrate; a device layer disposed on the circuit layer and comprising a light-emitting element emitting a first light having a first wavelength, a light-receiving element sensing a second light having a second wavelength, and a pixel defining film separating the light-emitting element and the light-receiving element; and a light conversion layer disposed on the device layer and comprising a light conversion pattern overlapping with the pixel defining film, wherein the light conversion pattern is configured to convert the first light emitted from the light-emitting element into the second light, and the light-receiving element is configured to sense the second light converted by the light conversion pattern.

Images