Apparatus and method for in situ chemical separation and recirculation in a chemical mechanical treatment system

Abstract

An apparatus and method for in situ chemical separation and recirculation in a chemical mechanical processing system are provided. In one embodiment, the chemical mechanical planarization system comprises a polishing platen having a surface configured to polish a substrate and a slurry supply system configured to supply a slurry to the surface of the polishing platen. The apparatus may further include an effluent collection device configured to collect a slurry from the polishing platen, filter the collected slurry, and supply the filtered slurry to the slurry supply system.

Description

Technology Field

[0001] Priority application information

[0002] This application claims the benefit of priority to U.S. Preliminary Application No. 63 / 608,749 filed on December 11, 2023, the disclosures of said basic application are incorporated herein by reference in their entirety. All applications for which foreign or national priority claims are identified in PCT applications filed together with this application are incorporated herein by reference.

[0003] Technology field

[0004] The present disclosure generally relates to chemical separation and recycling in situ in a chemical mechanical planarization (CMP) system. Background Technology

[0005] In the chemical mechanical planarization or polishing (CMP) process, abrasive and acidic or alkaline slurries are applied onto a rotating polishing pad / platen. A wafer is secured by a wafer carrier, which rotates and presses against the polishing platen for a specified period of time. During the CMP process, the wafer is polished or planarized by abrasion and corrosion. Therefore, slurry supply and post-use slurry collection can be important considerations in CMP system design.

[0006] Specific purposes and benefits of the present disclosure are described herein to explain the advantages achieved compared to the present disclosure and the prior art. Not all such purposes or benefits may be achieved in any specific embodiment. Accordingly, for example, those skilled in the art will recognize that the present invention may be implemented or practiced in a manner that achieves or optimizes one of the benefits or benefits taught herein, and may not necessarily achieve other purposes or benefits that may be taught or suggested herein.

[0007] One aspect of the disclosed technology is a chemical mechanical planarization (CMP) system, wherein the system comprises: a polishing platen having a surface configured to polish a substrate; a slurry supply system configured to supply a slurry to the surface of the polishing platen; and a slurry recirculation system configured to collect the slurry from the polishing platen, filter the collected slurry, and provide the filtered slurry to the slurry supply system.

[0008] In some embodiments, the slurry recirculation system includes an effluent collection device comprising a collection trough configured to collect slurry flowing down from the edge of a grinding platen; a discharge system configured to receive the slurry collected from the collection trough; and a recovery system configured to receive the slurry collected from the discharge system and filter the collected slurry.

[0009] In some embodiments, the discharge system includes a use slurry inlet comprising a first outlet configured to receive a slurry collected from a collection trough and a second outlet configured to receive a mixture of chemicals and deionized water flowing down from components of the CMP system excluding the polishing platen.

[0010] In some embodiments, the discharge system includes a valve and a control system configured to send the collected slurry to a main discharge port at the start of substrate processing and to send the collected slurry back to a recovery system after a preset time has elapsed since the start of substrate processing.

[0011] In some embodiments, the recovery system includes a coarse filter configured to perform a first filtration of the captured slurry; a microfilter configured to receive the captured slurry from the coarse filter and perform a second filtration of the captured slurry; and a slurry return unit configured to receive the captured slurry from the microfilter and return the captured slurry to a slurry supply system.

[0012] In some embodiments, the recovery system further comprises a slurry supply unit configured to supply a new slurry and an additive; and a mixer configured to receive a slurry captured from a microfiltration filter and a new slurry and an additive from the slurry supply unit, mix the captured slurry with the new slurry and the additive, and provide the captured slurry mixed with the new slurry and the additive to a slurry return unit.

[0013] In some embodiments, the recovery system further includes a metering controller configured to control the amount of new slurry and the amount of additive supplied from the slurry supply unit to the mixer.

[0014] In some embodiments, the instrumentation controller is further configured to determine the removal rate of the substrate processing; determine whether the difference between the removal rate and the specified removal rate is greater than a preset threshold; and, in response to the determination that the difference between the removal rate and the specified removal rate is greater than the preset threshold, to adjust the amount of new slurry and / or the amount of additive provided to the mixer.

[0015] In some embodiments, the recovery system further includes one or more sensors configured to measure one or more properties of the captured slurry output from the microfiltration filter, and the instrumentation controller is configured to adjust the amount of new slurry and / or the amount of additive supplied to the mixer based on the one or more measured properties.

[0016] Another embodiment is a slurry recirculation system, wherein the system comprises: an effluent collection device comprising a collection trough configured to collect slurry flowing down from the edge of a polishing platen of a chemical mechanical planarization (CMP) system; a discharge system configured to receive the slurry collected from the collection trough; and a recovery system configured to receive the slurry collected from the discharge system and filter the collected slurry, the recovery system comprising a slurry return unit configured to return the filtered slurry to the slurry supply system of the CMP system.

[0017] In some embodiments, the discharge system includes a use slurry inlet comprising a first outlet configured to receive a slurry collected from a collection trough and a second outlet configured to receive a mixture of chemicals and deionized water flowing down from components of the CMP system excluding the polishing platen.

[0018] In some embodiments, the discharge system includes a valve and a control system configured to send the collected slurry to a main discharge port at the start of substrate processing and to send the collected slurry back to a recovery system after a preset time has elapsed since the start of substrate processing.

[0019] In some embodiments, the recovery system comprises a coarse filter configured to perform a first filtration of the captured slurry; and a microfilter configured to receive the captured slurry from the coarse filter and perform a second filtration of the captured slurry, and the slurry return unit is further configured to receive the captured slurry from the microfilter.

[0020] In some embodiments, the recovery system further comprises a slurry supply unit configured to supply a new slurry and an additive; and a mixer configured to receive a slurry captured from a microfiltration filter and a new slurry and an additive from the slurry supply unit, mix the captured slurry with the new slurry and the additive, and provide the captured slurry mixed with the new slurry and the additive to a slurry return unit.

[0021] In some embodiments, the recovery system

[0022] It further includes an instrumentation controller configured to control the amount of new slurry and the amount of additives supplied from the slurry supply unit to the mixer.

[0023] In some embodiments, the instrumentation controller is further configured to determine the removal rate of the substrate processing; determine whether the difference between the removal rate and the specified removal rate is greater than a preset threshold; and, in response to the determination that the difference between the removal rate and the specified removal rate is greater than the preset threshold, to adjust the amount of new slurry and / or the amount of additive provided to the mixer.

[0024] In some embodiments, the recovery system further includes one or more sensors configured to measure one or more properties of the captured slurry output from the microfiltration filter, and the instrumentation controller is configured to adjust the amount of new slurry and / or the amount of additive supplied to the mixer based on the one or more measured properties.

[0025] Another aspect is a method for collecting and reusing a slurry from a chemical mechanical planarization (CMP) system, the method comprising the steps of: polishing a substrate using the polishing platen surface of the CMP system; supplying a slurry to the polishing platen surface; collecting the slurry from the polishing platen; filtering the collected slurry; and supplying the filtered slurry to a slurry supply system of the CMP system.

[0026] In some embodiments, the method further comprises the steps of: collecting a slurry flowing down through a collection trough from the edge of a grinding platen; flowing the collected slurry from the collection trough into a discharge system; receiving the collected slurry from the discharge system in a recovery system; and filtering the collected slurry in the recovery system.

[0027] In some embodiments, the discharge system includes a use slurry inlet comprising a first discharge port and a second discharge port, and the method further comprises the steps of: receiving a slurry collected from a collection trough using the first discharge port; and receiving a mixture of chemicals and deionized water flowing down from a component of the CMP system, excluding a polishing platen, using the second discharge port.

[0028] In some embodiments, the method further includes the step of sending the captured slurry to a main outlet at the start of substrate processing; and the step of sending the captured slurry back to a recovery system after a preset time has elapsed after the start of substrate processing.

[0029] In some embodiments, the method further comprises the steps of: performing coarse filtration of the captured slurry; performing microfiltration of the captured slurry; and returning the captured slurry to a slurry supply system after coarse filtration and microfiltration.

[0030] In some embodiments, the method further comprises the steps of: supplying a new slurry and an additive using a slurry supply unit; receiving a captured slurry that has undergone coarse filtration and microfiltration in a mixer and an additive from the slurry supply unit; mixing the captured slurry with the new slurry and the additive using a mixer; and providing the captured slurry mixed with the new slurry and the additive to a slurry supply system.

[0031] In some embodiments, the method further includes the step of controlling the amount of new slurry and the amount of additive provided from the slurry supply unit to the mixer.

[0032] In some embodiments, the method further comprises the steps of: determining a removal rate of substrate processing; determining whether the difference between the removal rate and a specified removal rate is greater than a preset threshold; and adjusting the amount of new slurry and / or additive provided to a mixer in response to determining that the difference between the removal rate and the specified removal rate is greater than a preset threshold.

[0033] In some embodiments, the method further comprises the step of measuring one or more properties of the captured slurry output from the microfiltration of the captured slurry, and the step of adjusting the amount of new slurry and / or the amount of additive supplied to the mixer is also based on one or more of the measured properties. Brief explanation of the drawing

[0034] In addition to the above purposes of the disclosed technology, additional purposes, features, and benefits will be better understood through the following exemplary and non-limiting description of specific embodiments of the disclosed technology with reference to the accompanying drawings. In the drawings, the same reference numerals are used for the same elements unless otherwise noted. Fig. 1 This is a schematic diagram of a substrate processing system, showing a substrate carrier that fixes the substrate to the processing position. Fig. 2 Is Fig. 1 As a drawing of a substrate processing system, a substrate carrier that fixes a substrate at a loading position is shown. Fig. 3 silver Figures 1 and 2 This is a partial cross-sectional view of a substrate carrier head that may be included as part of the substrate carrier shown in the figure. Fig. 4a and Fig. 4b This shows an effluent collection device for a CMP system according to an embodiment of the present disclosure. Fig. 5The present disclosure illustrates a discharge system comprising a discharge port and a control valve configured to be connected to an effluent collection device according to an embodiment of the present disclosure. FIGS. 6a to 6c This illustrates another embodiment of the discharge system (600) according to an aspect of the present disclosure. Fig. 7 This is a block diagram of a recovery system connected between an outlet and a control valve and a slurry supply system according to an embodiment of the present disclosure. Fig. 8 This is an exemplary method for monitoring the removal rate of a plurality of wafers and controlling the recovery slurry returned to a CMP system according to an embodiment of the present disclosure. Fig. 9 This is an exemplary method that can be performed by a CMP system to collect and reuse a slurry from a CMP system according to an embodiment of the present disclosure. Specific details for implementing the invention

[0035] Although the following text provides a detailed description of numerous different embodiments of the present invention, it should be understood that the legal scope of the present invention is defined by the wording of the claims set forth at the end of this patent. This detailed description should be interpreted as illustrative only, and not all possible embodiments are described, as it would be unnecessary, if not impossible, to describe all possible embodiments of the present invention. Numerous alternative embodiments may be implemented using current technology or technology developed after the filing date of this patent, and these embodiments still fall within the scope of the claims defining the present invention.

[0036] Chemical Mechanical Planarization (CMP)

[0037] The adoption and use of Chemical Mechanical Planarization (CMP) for thin film planarization in various similar application fields, including the manufacturing of semiconductor ICs, MEMS devices, and LEDs, is common among "chip" manufacturers for these types of devices. The adoption of this technology includes the manufacturing of chips for desktop and laptop computers, as well as mobile phones, tablets, and other portable devices. Advances in nanotechnology and microfabrication present great potential for the widespread use and adoption of digital devices in the medical, automotive, and Internet of Things ("IoT") sectors. Chemical mechanical planarization technology for thin film planarization was invented and developed by scientists and engineers at IBM Corporation in the early 1980s. Today, this process is widely adopted globally and is one of the fundamental technologies in the manufacturing of many digital devices.

[0038] Integrated circuits are fabricated with multiple and alternating layers of conductive materials (e.g., copper, tungsten, aluminum, etc.), insulating layers (e.g., silicon dioxide, silicon nitride, etc.), and semiconductor materials (e.g., polycrystalline silicon). Although a successive combination of these layers is applied sequentially to the wafer surface, topographical irregularities are formed in the device structure due to devices embedded on the surface, such as in the case of silicon dioxide insulator layers. These undesirable topographical irregularities are often flattened or "planarized" using CMP before depositing the next layer to enable proper interconnection between device features as they continue to miniaturize. In the case of copper layers, copper is deposited on the surface to fill contact vias and form effective vertical paths for electron transport between devices and layers. This procedure is continued for each applied layer (typically applied by a deposition process). In the case of multiple layers of conductive materials (multilayers of metal), multiple polishing procedures (once for each layer of conductive, insulator, and semiconductor materials) may be required to achieve successful interconnection between circuit and device features.

[0039] During the CMP process, a substrate or wafer is secured by a wafer carrier, which is typically rotated and compressed against a polishing platen for a specified time through an elastic membrane within the wafer carrier. The CMP wafer carrier generally includes components for precisely polishing a workpiece that is generally flat and circular, such as a silicon wafer and / or a film deposited thereon, over a process head. These components include: 1) an elastic membrane, wherein a compressed gas is applied to its upper or back surface, and said pressure is transmitted through the membrane to the upper or back surface of the workpiece so as to remove the material during CMP; and 2) one or more rigid support components, wherein the rigid support components provide means for securing the membrane to a coupling component, maintaining the membrane in a desired shape and dimensions, and / or providing a sealed space for securing the membrane to seal and maintain a controlled gas pressure.

[0040] During the process, the slurry is supplied to the rotary polishing pad through a fluid control device, such as a metering pump or a mass flow control regulator system. The slurry can be transferred to the polishing platen through a single-pass distribution system. For better performance, the slurry particles in the medium must be evenly distributed between the rotating wafer and the rotating polishing pad / platen.

[0041] Force is applied to the back of the wafer by the wafer carrier membrane, pressing the wafer against the pad, allowing both the wafer and the pad to move to generate relative velocity. Wear occurs as abrasives are pressed against the substrate while a portion of the pad moves across the wafer surface due to motion and force. Corrosive chemicals contained in the slurry alter the material being polished on the wafer surface. This combination of mechanical wear effects and chemical alterations is called Chemical Mechanical Polishing (CMP). When chemical and mechanical effects act simultaneously, the rate of material removal can easily be increased by a single order of magnitude compared to when only one effect acts alone. Similarly, the smoothness of the surface after polishing is improved by using both chemical and mechanical effects together.

[0042] Next-generation chemical mechanical processing (CMP) tools are being designed to utilize complex slurry chemicals. Examples of these slurry chemicals include, but are not limited to, potassium permanganate (KMnO4), sodium permanganate (NaMnO4), and permanganate-free rock salt slurries (MXO2, where M is an alkali metal and X is a halogen). One example of a permanganate-free rock salt slurry is sodium hypochlorite (NaClO2). These chemicals are relatively very expensive and may take a relatively long time (e.g., 10 to 30 minutes) to be introduced into the CMP system (also referred to as a process tool). These complex slurry chemicals may be advantageous over previous slurry chemicals by causing less scratching on the substrate than traditional diamond-based slurries, and, for example, by providing a relatively higher and / or more consistent removal rate. As used herein, "chemicals" may refer to any chemical / particle / contaminant generated by the chemical / particle components of the slurry and / or other components of the CMP system (e.g., material removed from the surface of the substrate being polished).

[0043] Due to the cost of these slurry chemicals, it is desirable to recover the used slurry, which may include separating the used slurry from other chemicals and deionized water flowing simultaneously in the CMP system.

[0044] During the polishing process, materials such as copper, dielectrics, or polycrystalline silicon are removed from the surface of the wafer. These fine particles may remain suspended in the slurry, become embedded in the polishing pad, or both. These particles cause scratches on the surface of the film being polished, leading to catastrophic circuit failures and rendering the chip unusable, which consequently has a significant adverse effect on yield. Therefore, to reuse slurry chemicals, it is desirable to remove these particles and any other potential contaminants from the slurry chemicals so that the recovered slurry chemicals can be reused without posing a significant risk of damaging the wafer being polished.

[0045] The disclosed technology is described with reference to specific embodiments and specific drawings. The present disclosure is not limited thereto but is limited only by the claims. The described drawings are merely schematic and non-limiting. In the drawings, the size of some elements may be exaggerated and may not be depicted in proportion for illustrative purposes. Dimensions and relative dimensions do not necessarily correspond to actual reductions for carrying out the present disclosure.

[0046] Liquid-cooled CMP system

[0047] Fig. 1 This is a schematic diagram of a chemical mechanical planarization (CMP) system (100) for processing a polishing pad (110). The CMP system (100) may include a polishing pad (110), a platen (120), a slurry supply system (140), a substrate carrier (150), and a pad conditioning arm (160). In some embodiments, the CMP system (100) also FIGS. 4 to 7It includes a slurry recirculation system (200) which is described in more detail in relation to.

[0048] A wafer carrier (150) may be configured to secure and process a wafer. It will be understood that the term “wafer” as used herein may refer to a semiconductor wafer (e.g., circular), but may more broadly include other types of substrates of different shapes processed by polishing or planarization equipment such as CMP equipment. Accordingly, throughout this application, the terms “wafer” and “substrate” may be used interchangeably unless the context explicitly refers only to a specific “wafer” or “substrate.” In the illustrated embodiment, the substrate carrier (150) is in a processing position (e.g., a lower position) and secures the substrate (not shown) to a polishing pad (110) using a membrane (not shown). The polishing pad (110) may be located on a supporting surface, such as the surface of a platen (120).

[0049] Fig. 2 Is Fig. 1 A drawing of the CMP system (100) shows a substrate (155) fixed in a loading position (e.g., upper position) by a substrate carrier (150). The substrate (155) can be fixed, for example, by the force of a vacuum. Fig. 1 and Fig. 2 Referring to the, the slurry supply system (140) may be configured to supply a processing slurry to a substrate (155) and to allow the substrate (155) to be chemically / mechanically flattened against the polishing pad (110). In some embodiments, the slurry supply system (140) may receive the slurry from a slurry source (not shown). The pad conditioning arm (160) may include a pad conditioner at the end of the pad conditioning arm (160). The pad conditioner may be configured to process or "improve" the surface roughness or other processing characteristics of the pad during or between processing cycles.

[0050] Fig. 1 and Fig. 2 In the CMP system (100), the polishing pad (110) may be positioned on the upper surface of a platen (120) that rotates counterclockwise around a vertical axis. Other orientations and directions of movement may also be implemented.

[0051] A slurry supply system (140) can supply a slurry containing abrasives and corrosive particles to the surface of a treated polishing pad (130). The polishing slurry is generally a colloidal suspension of abrasive particles, i.e., colloidal silica, colloidal alumina, or colloidal ceria in an aqueous medium. In various embodiments, the slurry supply system (140) includes a metering pump, a mass flow control regulator system, or other suitable fluid supply components.

[0052] It may be advantageous to capture and reuse complex slurry chemicals used in next-generation CMP systems. This enables the use of more expensive slurry chemicals while reducing overall costs by reusing at least a portion of the captured slurry.

[0053] A substrate carrier (150) may fix a substrate (155) using, for example, a vacuum, so that the surface of the substrate (155) to be polished faces the polishing pad (110). Abrasive particles and corrosive chemicals in the slurry deposited on the polishing pad (110) by the slurry supply system (140) mechanically and chemically polish the substrate through abrasion and corrosion, respectively. The substrate carrier (150) and the polishing pad (110) may move in various ways relative to each other to provide polishing. For example, the substrate carrier (150) may apply a downward force to the platen (120) so that the substrate (155) is pressed against the polishing pad (110). The substrate (155) may be pressed against the polishing pad (110) using a pressurized membrane (not shown) as further described herein. Abrasive particles and corrosive chemicals contained in the slurry between the substrate (155) and the polishing pad (110) can provide chemical and mechanical polishing as the polishing pad (110) and the substrate carrier (150) move relative to each other. The relative movement between the polishing pad and the substrate carrier can be configured in various ways, and either or both can be configured to vibrate, move in a straight line, and / or rotate counterclockwise and / or clockwise relative to each other.

[0054] The pad conditioning arm (160) can condition the surface of the polishing pad (110) by applying force to the polishing pad (110) and compressing it, and can perform relative movement such as the relative movement described above with respect to the polishing pad and the substrate carrier (150). In the illustrated embodiment, the pad conditioning arm (160) can vibrate, and at its end there is a rotating pad conditioner which contacts the polishing pad (110).

[0055] Fig. 3 silver Figures 1 and 2This is a partial cross-sectional view of a substrate carrier head (300) that may be included as part of a substrate carrier (150) illustrated in the thereof. The substrate carrier head (300) includes a membrane assembly (305) for a chemical mechanical planarization (CMP) system. In some embodiments, the substrate carrier head (300) (also referred to herein as a carrier head) may include a support base (380) on which the membrane assembly (305) is mounted. The support base (380) may be any suitable configuration for providing support to the membrane assembly. The support base (380) may attach and connect the remainder of the substrate carrier head (300) to a CMP system (not shown). The support base (380) may include a carrier body, a substrate retainer, a support plate, and / or other components described elsewhere in the thereof to support a wafer (e.g., the membrane assembly (305)) and / or connect the remainder of the carrier head (300) to a CMP system.

[0056] As illustrated, the membrane assembly (305) may include a support plate (310), an elastic membrane (320), a membrane retainer such as a membrane clamp (330), and an optional external pressure ring (340). The support plate (310) may be any suitable configuration for supporting the wafer during processing, for example, a configuration for attaching the membrane assembly (305) to a support base (380). For example, the support plate (310) may be mounted to the support base (380) using one or more bolts or other suitable attachment elements. The support plate (310) may be mounted to the support base (380) at various locations, for example, along the outer surface of the support base (380).

[0057] The support plate (310) may be any suitable configuration for supporting a wafer, for example, through an elastic membrane (320). The elastic membrane (320) may be secured to the support plate (310) in a number of different ways. The elastic membrane (320) may be secured to the support plate (310) before or after the support plate (310) is secured to the support base (380). The elastic membrane (320) may be secured to the support plate (310) using a number of suitable different membrane retainer securing elements, such as a membrane clamp (330). In some embodiments, the membrane clamp (330) may be spring-mounted. In other embodiments, the membrane clamp (330) may be tightly secured through the use of a fastening mechanism (e.g., nuts and bolts, etc.). The membrane clamp (330) can secure the outer portion (e.g., outer edge) of the membrane (320) to the corresponding portion of the support plate (310) and / or support base (380). The membrane retainer may be any suitable configuration for securing at least a portion of the membrane (320) to the support plate (310) and / or support base (380).

[0058] The elastic membrane (320) is, for example, Figures 1 and 2As described above with reference to the membrane (320), the membrane (320) may be fixed to a support plate (310) so that the substrate (370) can be fixed to the polishing pad and the substrate can be processed. The membrane may include a first surface (e.g., a downward surface) configured to contact the surface of the substrate (e.g., an upward surface). The membrane (320) may be sufficiently elastic and flexible so that the membrane (320) can apply more uniform pressure over the entire substrate (370) in combination with the polishing pad material and process parameters. In some embodiments, the elasticity and flexibility of the membrane (320) may also help to reduce breakage of the substrate. The membrane (320) and the support plate (310) may be configured so that liquid flows between the membrane (320) and the support plate (310) during the flattening process and the membrane (320) is compressed against the substrate (370). For example, the membrane (320) may be configured so that liquid flows along a second surface, such as an upward surface, facing the aforementioned first membrane surface. A support plate (310) may be spaced apart from the membrane (320) so that a gap or membrane cavity (360) is formed between them. The membrane cavity (360) may be formed when the membrane (320) is in a stationary (e.g., non-pressurized) state. The membrane cavity (360) may be sealed. In some embodiments, a liquid-tight seal may be formed within the membrane cavity (360) to prevent the liquid from leaking out of the membrane cavity (360) when the liquid is pressurized. Thus, the membrane cavity (360) may form a liquid cavity through which the liquid can circulate. For example, a seal may be formed between a portion of the membrane (320) and a portion of the carrier body (e.g., plate (310) and / or base (380)) in the membrane clamp (330). The sealed membrane cavity used herein includes a membrane cavity in fluid communication with an inlet(s) and / or outlet(s) that can be optionally sealed (e.g., opened and closed by a valve).

[0059] Exemplary system and method for chemical separation and recycling in situ

[0060] As mentioned above, next-generation CMP tools are designed to use complex slurry chemicals. These chemicals are relatively very expensive and may take a relatively long time (e.g., 10 to 30 minutes) to be introduced into the CMP system. These complex slurry chemicals may be advantageous over previous slurry chemicals, for example, by providing higher and more consistent removal rates.

[0061] An aspect of the present disclosure relates to an apparatus and technology for recovering at least a portion of the slurry used in CMP. As described herein, such a process may include the step of separating the used slurry from other chemicals and deionized water flowing simultaneously in the CMP system. Since slurry chemicals can be relatively expensive, recovering the slurry can provide cost savings as well as environmental benefits by reducing the amount of slurry discarded as waste.

[0062] To solve the aforementioned problem, an embodiment of the present disclosure is a CMP system (e.g., Fig. 1 and / or Fig. 2 The invention relates to a slurry recirculation system (200) configured to capture and recover at least a portion of the slurry used by a CMP system (100). In some embodiments, the CMP system may include the slurry recirculation system (200) as a component of the system. In some embodiments, the slurry recirculation system (200) may be a separate device configured to be connected to the CMP system.

[0063] The slurry recirculation system (200) is an effluent collection device (e.g., Fig. 4 effluent collection device (400)), discharge system (e.g., Fig. 5 The discharge system (500) or FIGS. 6a to 6c The discharge system (600)), and recovery system (e.g., Fig. 7 It may include a recovery system (700). As described herein, the effluent collection device may be configured to collect slurry and / or other effluent from the CMP system, the discharge system may be configured to receive the effluent collected from the effluent collection device, and the recovery system may be configured to recover at least a portion of the collected slurry.

[0064] The effluent collection device of the slurry recirculation system (200) is equipped with an outlet (e.g., a coaxial outlet) and an effluent collection and control system device, through which at least a portion of the slurry chemical can be recovered. Fig. 4a and Fig. 4b is a CMP system according to an embodiment of the present disclosure (e.g., Fig. 1 or Fig. 2 An exemplary embodiment of an effluent collection device (400) for a system (100) is illustrated.

[0065] Fig. 4a and Fig. 4b Referring to, the effluent collection device (400) is a grinding platen (405) (e.g., Fig. 1 and Fig. 2 It includes a chemical collection trough (420) surrounding the platen (120) of the device, and an outlet (430) configured to transfer fluid to a discharge system. For example, the outlet (430) Fig. 5 In relation to this, the fluid may be transferred to a discharge system such as discharge system 500, which is further illustrated and discussed herein. Also illustrated is a slurry chemical flow path (410) which may contain a mixture of slurry chemicals and deionized water (DI), and the mixture flows to the edge of a grinding platen (405) and enters a chemical collection trough (420). The grinding platen (405) is schematically and transparently illustrated to clarify its relationship with other components illustrated.

[0066] When the CMP system initiates the CMP process, a mixture of slurry chemicals and deionized water is generated on the polishing platen (405) as a result of the CMP process. The slurry is supplied by a slurry supply system (e.g., Fig. 2 A slurry is introduced onto the polishing platen (405) through the slurry supply system (140). The slurry flows across the polishing platen (405) (e.g., from the center of the polishing platen (405) to the edge), thereby pushing the slurry chemicals and deionized water toward the outer edge of the polishing platen (405) as illustrated by the chemical flow path (410). A chemical collection trough (420) collects the mixture flowing out from the edge of the polishing platen (405) and allows the mixture to flow from the trough (420) into the outlet (430).

[0067] Fig. 5 The present disclosure illustrates a discharge system (500) comprising a discharge port and a control valve configured to be connected to an effluent collection device according to an embodiment of the present disclosure. In particular, Fig. 5 is a cross-sectional view of the discharge system (500).

[0068] Fig. 5 As illustrated in the figure, the discharge system (500) includes a use slurry inlet (540), a recovery valve (570), a dump valve (550), a main outlet (560), and a control system (530). At the use slurry inlet (540), a first mixture (505) of chemicals and deionized water is supplied from the outlet (430) of the effluent collection device (400). The use slurry inlet (540) includes a first outlet (541) (also referred to as an internal outlet) that is coaxial with a second outlet (543) (also referred to as an external outlet). In some embodiments, the first outlet (541) and the second outlet (543) may have a different non-coaxial arrangement, such as being placed at different locations relative to the CMP system.

[0069] The inner outlet (541) receives the first mixture (505), and the outer outlet (543) receives the second mixture (510) of chemicals and deionized water flowing out (e.g., down) from components of the CMP system excluding the polishing platen (405). For example, the second mixture (510) of chemicals and deionized water may flow out from various rinse and spray nozzles configured to keep the wafer and internal components of the CMP system (100) wet, such as from a carrier cleaning station and / or a CMP system (100). This second mixture may be collected, for example, by a separate collection trough and / or slope, or by another collection device within the CMP system connected into the outer outlet (543). The outer outlet (543) and / or the inner outlet (541) may be fluidly connected (e.g., optionally fluidly connected) to the main outlet (560). For example, the use slurry inlet (540) is connected to a dump valve (550) and a recovery valve (570). The control system (530) is configured to control the dump valve (550) to open at the start of the CMP process to remove the chemical and deionized water generated before the slurry is supplied to the polishing platen (405). The opened dump valve (550) supplies the chemical and deionized water to the main outlet (560). After a sufficient amount of chemical and deionized water has been removed, the first mixture (505) of chemical and deionized water flowing through the inner outlet (541) of the use slurry inlet (540) may substantially contain only slurry (e.g., the slurry may be substantially free of contaminants). That is, after the CMP process reaches a steady state, the first mixture (505) of chemical and deionized water contained in the slurry supplied from the outlet (430) may be smaller than a preset threshold.

[0070] The control system (530) supplies the first mixture (505) of the supplied chemical substance and deionized water. Fig. 7The control system is configured to control the recovery valve (570) to open and the dump valve (550) to be redirected to the recovery system (700) shown in the illustration. In some embodiments, the control system (530) is configured to redirect the slurry to the recovery system (700) after a preset time has elapsed since the start of the CMP process. However, the embodiments of the present disclosure are not limited thereto, and in some embodiments, the control system (530) may measure the slurry using one or more sensors (not shown) to determine whether the amount of chemicals and / or deionized water is below a critical level before redirecting the slurry to the recovery system (700).

[0071] FIGS. 6a to 6c This illustrates another embodiment of the discharge system (600) according to an aspect of the present disclosure. In particular, Fig. 6a is a perspective view of the discharge system (600), and Fig. 6b is a partial cross-sectional view of the discharge system (600), and Fig. 6c is a side view of the exhaust system (600).

[0072] FIGS. 6a to 6c As illustrated in FIG. 6, the discharge system (600) includes a use slurry inlet (640), a valve (650), a main outlet (660), and a control system (630). The discharge system (600) of FIG. 6a through 6c may be substantially similar to discharge system 500 ( FIG. 5), except that the dump valve (550) and the recovery valve (570) are replaced by a combined valve (650). The valve (650) is configured to redirect a mixture of chemicals and deionized water supplied from the outlet (430) of the effluent collection device (400) back to the main outlet (660) or the recovery system (700). The components of the discharge system (600) are otherwise Fig. 5 It functions similarly to the corresponding component of.

[0073] Fig. 7The figure illustrates an embodiment of a recovery system (700) that can be connected to a discharge system such as a discharge system 500 or 600. For example, the recovery system (700) includes control valve(s) (e.g., Fig. 5 The recovery valve (570) or FIGS. 6a to 6c The valve (650)) and the slurry supply system (e.g., Fig. 1 It can be connected between the slurry supply system (140).

[0074] Fig. 7 As illustrated in FIG. 7, the recovery system (700) includes a coarse filtration filter (710), a microfiltration filter (720), a mixer (730), a slurry supply unit (740), an instrumentation controller (750), and a slurry return unit (760). Although the components of FIG. 7 are schematically illustrated, it will be understood that any components suitable for use within the CMP slurry recovery process may be implemented. The coarse filtration filter (710) receives the slurry for use from the recovery valve (570) or valve (650). The coarse filtration filter (710) performs initial filtration of the slurry using the coarse filter. The microfiltration filter (720) receives the coarsely filtered slurry from the coarse filtration filter (710) and performs secondary filtration of the slurry using the microfilter. An embodiment of the illustrated recovery system (700) includes both a coarse filtration filter (710) and a fine filtration filter (720), but in other embodiments, the recovery system (700) may include a single filter or three or more filters.

[0075] The slurry supply unit is configured to provide a pH spike additive (742), an abrasive (744), a new slurry (746), and / or other additives to be mixed into the filtered slurry. In some embodiments, the slurry supply unit (740) is Fig. 1 and Fig. 2New slurry (746) may be supplied from a slurry source that supplies slurry to the slurry supply system (140). The mixer (730) is configured to receive microfiltered slurry from the microfiltration filter (720) and receive pH spike additive (742), abrasive (744), and / or new slurry (746) from the slurry supply unit (740). The mixer (730) is configured to mix the filtered used slurry with the new slurry (746), pH spike additive (742), and / or abrasive (744). Then, the mixture of the filtered used slurry and any additive and / or new slurry is returned to another part of the CMP system (e.g., to a polishing platen via the slurry supply system (140)) through the slurry return unit (760) so that the slurry can be reused in the CMP process. The slurry return unit may be any suitable configuration that allows fluid communication (controllable and / or optional communication, such as valves, flow controllers, etc.) between the mixer and other parts of the CMP system for slurry reuse.

[0076] The instrumentation controller (750) is configured to control the amount of new slurry (746) and / or additives (e.g., pH spike additive (742), abrasive(s) (744), etc.) provided to the mixer (730) to ensure that the slurry returned to the CMP system has substantially consistent chemical properties (e.g., the chemical composition of the returned slurry does not change beyond a critical amount). Thus, the returned slurry is configured to maintain a substantially consistent removal rate (e.g., a removal rate that does not change beyond a critical amount) during the process of polishing multiple wafers.

[0077] In another embodiment, the measurement controller (750) is configured to measure the measurement thickness of the wafer processed by the CMP system (100) to determine the removal rate of the wafer. For example, in some embodiments, the wafer thickness before the CMP process may be compared with the wafer thickness after the CMP process is completed to determine the total thickness removed during processing. The removal rate may be determined based on the amount of thickness removed. As described in connection with FIG. 8, the measurement controller (750) may use the removal rate to control the amount of pH spike additive (742), abrasive (744), new slurry (746), and / or other additives to be provided to the mixer (730).

[0078] In some embodiments, the instrumentation controller (750) is configured to measure the properties of the microfiltered slurry to control the amount of pH spike additive (742), abrasive (744), new slurry (746), and / or other additives to be provided to the mixer (730). For example, in some embodiments, the microfilter filter (720) may include one or more sensor(s) (e.g., conductivity sensors) (722) configured to measure the pH, amount of abrasive, and / or other properties of the microfiltered slurry. In other embodiments, the sensor(s) may be located downstream of the microfilter filter (720) and / or as part of the instrumentation controller (750), and a portion of the filtered slurry may be diverted to the sensor(s) for measurement.

[0079] Fig. 8This is an exemplary method (800) that can be performed by the CMP system (100) to monitor the removal rate of a plurality of wafers according to an aspect of the present disclosure and to control the recovery slurry returned to the CMP system (100). In some embodiments, one or more blocks of method 800 may be performed by a component of the slurry recirculation system (200), an effluent capture device (400), a recovery system (700), an instrumentation controller (750), and / or other components of the CMP system (100).

[0080] Method 800 begins at block 802. At block 804, Method 800 includes the step of obtaining a measurement thickness measurement. In some embodiments, block 802 also includes the step of determining the removal rate of the wafer based on the measurement thickness measurement. For example, the removal rate of the wafer may be determined by comparing the thickness of the wafer before the CMP process with the thickness of the wafer after the CMP process is completed. In some embodiments, the measurement controller (750) may be configured to determine the removal rate by receiving the removal rate from other components and / or receiving wafer thickness measurements before and after the CMP process from a thickness measuring device. The removal rate may also be determined based on the time the CMP process was performed. Thus, the measurement controller (750) may be configured to receive, for example, a measurement of the time the CMP process was performed on the wafer from other components of the CMP system.

[0081] In block 806, method 800 includes a step of determining whether the removal rate of the wafer is within specifications. For example, the metrology controller (750) may determine whether the difference between the removal rate and the specified removal rate is less than a preset threshold. In some embodiments, the preset threshold may be a difference of about 10%, 7%, 5%, 3%, 2%, 1%, and / or other values ​​in between. If it is determined that the removal rate is within specifications, method 800 continues to block 810, where the metrology controller (750) is configured to continue without changing or adjusting the slurry mixture for the next wafer to be processed. However, if it is determined that the removal rate is not within specifications, method 800 continues to block 808, where the metrology controller (750) Fig. 7 The amount of new slurry supplied to the mixer (730) and / or the amount of additives (e.g., pH spike, abrasive(s), etc.) is configured to be controlled. Then, the new slurry is mixed with the microfiltered slurry supplied into the mixer (730) and can be transferred from the mixer (730) through the slurry return section to another part of the CMP system (e.g., to the polishing platen via the slurry supply system (140)) to control the removal rate of the wafer to be processed next. Method 800 can be repeated for the next wafer processed by the CMP system.

[0082] In some embodiments, the instrumentation controller (750) also, or alternatively, based on the output of one or more sensor(s) (722). Fig. 7It is configured to control the amount of new slurry and / or additives (e.g., pH spike, abrasive(s), etc.) provided to the mixer (730). For example, in some embodiments, sensor(s) (722) may be configured to measure the pH of the microfiltered slurry output from the microfiltration filter (720). If it is determined that the pH of the microfiltered slurry is lower than a preset value, the instrumentation controller (750) may be configured to increase the amount of pH spike additive (742) provided to the mixer (730). In some embodiments, one or more sensor(s) (722) may be configured to measure the concentration of abrasives contained in the microfiltered slurry. If it is determined that the concentration of abrasives in the microfiltered slurry is lower than a preset value, the instrumentation controller (750) may be configured to increase the amount of abrasive (744) provided to the mixer (730). One or more sensor(s) (722) may be configured to measure the concentration of contaminants (e.g., materials other than the slurry and additives) contained in the microfiltered slurry. If it is determined that the concentration of contaminants in the microfiltered slurry is lower than a preset value, the instrumentation controller (750) may be configured to increase the amount of fresh slurry (746) supplied to the mixer (730). In some embodiments, the instrumentation controller (750) may be configured to adjust the amount of fresh slurry supplied to the mixer (730) and / or the amount of additives (e.g., pH spikes, abrasive(s), etc.) based on the sensor (722) measurement, even when, for example, the removal rate is within specifications. Then, the new slurry and any additives are mixed with the finely filtered slurry supplied into the mixer (730) and then returned from the mixer (730) to another part of the CMP system (e.g., to the polishing platen via the slurry supply system) to control the removal rate of the wafer to be processed next.

[0083] By reusing the slurry and making adjustments based on sensor (722) measurements when it is determined that the removal rate is not within specifications, the amount of new slurry used and / or the amount of additives (e.g., pH spikes, abrasive(s), etc.) can be significantly reduced, especially compared to a CMP system that simply discards the used slurry without any recovery process. For certain CMP processes that use complex and / or expensive slurry chemicals, this can result in significant cost savings compared to otherwise wasteful processes.

[0084] Fig. 9 This is an exemplary method (900) that can be performed by a CMP system (100) to collect and reuse a slurry from a CMP system (100) according to an aspect of the present disclosure. In some embodiments, one or more blocks of method 900 may be performed by an effluent collection device (400), a recovery system (700), an instrumentation controller (750), and / or other components of the CMP system (100).

[0085] Method 900 begins at block 902. At block 904, Method 900 includes the step of polishing a substrate using the surface of a polishing platen of a CMP system. In some embodiments, the CMP system Fig. 1 or Fig. 2 It may include a CMP system (100).

[0086] In Block 906, Method 900 includes the step of supplying a slurry to the surface of a grinding platen. For example, a slurry supply system (e.g., slurry supply system 140) is a grinding platen (e.g., Fig. 4a and Fig. 4b A slurry can be provided to the grinding platen (405). In some embodiments, block 906 may be performed before or simultaneously with block 904.

[0087] In Block 908, Method 900 includes the step of collecting a slurry from a grinding platen. The slurry Fig. 5 The discharge system (500) and / or FIGS. 6a to 6c It can be collected using an exhaust system such as the exhaust system (600).

[0088] In Block 910, Method 900 includes the step of filtering the captured slurry. The slurry is filtered in a filtration system (e.g., Fig. 7 It can be filtered using a coarse filter (710) and / or a fine filter (720).

[0089] In block 912, method 900 includes the step of providing the filtered slurry to a slurry supply system. Method 900 ends in block 914.

[0090] In some embodiments, the method 900 further comprises the steps of: collecting a slurry flowing down through a collection trough from the edge of a grinding platen; flowing the collected slurry from the collection trough into a discharge system; receiving the collected slurry from the discharge system in a recovery system; and filtering the collected slurry in the recovery system.

[0091] In some embodiments, the discharge system includes a use slurry inlet comprising an inner discharge port and an outer discharge port. Method 900 may further include the steps of receiving a slurry collected from a collection trough using the inner discharge port, and receiving a mixture of chemicals and deionized water flowing from a component of the CMP system, excluding the polishing pad, using the outer discharge port.

[0092] In some embodiments, the method 900 further includes the step of sending the captured slurry to a main outlet at the start of substrate processing, and the step of sending the captured slurry back to a recovery system after a preset time has elapsed after the start of substrate processing.

[0093] In some embodiments, the method 900 further comprises the steps of performing coarse filtration of the captured slurry, performing microfiltration of the captured slurry, and returning the captured slurry to a slurry supply system after coarse filtration and microfiltration.

[0094] In some embodiments, the method 900 further comprises the steps of supplying a new slurry and an additive using a slurry supply unit; receiving a captured slurry that has undergone coarse filtration and microfiltration in a mixer and an additive from the slurry supply unit; mixing the captured slurry with the new slurry and the additive using a mixer; and providing the captured slurry mixed with the new slurry and the additive to a slurry supply system.

[0095] In some embodiments, method 900 further includes the step of controlling the amount of new slurry and the amount of additive provided from the slurry supply unit to the mixer.

[0096] In some embodiments, the method 900 further comprises the steps of determining a removal rate of a substrate, determining whether the difference between the removal rate and a specified removal rate is greater than a preset threshold, and adjusting the amount of new slurry and / or additive provided to a mixer in response to determining that the difference between the removal rate and the specified removal rate is greater than a preset threshold.

[0097] In some embodiments, Method 900 further includes the step of measuring one or more properties of the captured slurry output from the microfiltration filter. The step of adjusting the amount of fresh slurry and / or the amount of additive supplied to the mixer may be further adjusted based on one or more measured properties.

[0098] Any variations and modifications may be made to the embodiments described above, and elements of the embodiments described above should be understood as being one of other acceptable examples. All such modifications and variations are intended to be included herein within the scope of this disclosure. The foregoing description is a detailed description of specific embodiments. However, it will be understood that the system and method may be implemented in various ways, no matter how detailed the foregoing description may be. As foregoing, it should be noted that the use of specific terms when describing specific features or aspects of the system and method should not be construed to mean that such terms are redefined herein to be limited to including any specific characteristic of the features or aspects of the system and method in question.

[0099] Conditional language, such as “can,” “could,” “could,” and “could,” is generally intended to convey that, unless specifically stated otherwise or understood otherwise in the context in which it is used, a particular embodiment includes a particular feature, element, and / or step, while another embodiment does not. Accordingly, such conditional language is not generally intended to imply that a feature, element, and / or step is required in any way for one or more embodiments, or that one or more embodiments must include logic to determine whether such feature, element, and / or step is included or should be performed in any particular embodiment, regardless of user input or instruction.

[0100] Unless otherwise specifically stated, conjunctions such as "at least one of X, Y, and Z" or "at least one of X, Y, or Z" should be understood in the context in which they are generally used to convey that an item, term, etc., may be one of X, Y, or Z, or a combination thereof. For example, the term "or" is used in its inclusive sense (and not in an excluding sense); when used, for instance, to link a list of elements, the term "or" refers to one, some, or all of the elements within the list. Therefore, these conjunctions are generally not intended to imply that a particular implementation requires at least one of X, at least one of Y, and at least one of Z to exist, respectively.

[0101] The term “one” as used herein should be interpreted inclusively rather than exclusively. For example, unless specifically stated otherwise, the term “one” should not be understood to mean “exactly one” or “only one,” but instead, the term “one” means “one or more” or “at least one,” regardless of whether it is used elsewhere in the claims or specification and regardless of the use of quantifying terms such as “at least one,” “more than one,” or “plural” elsewhere in the claims or specification.

[0102] The term “comprising” as used herein should be interpreted inclusively rather than exclusively. For example, a general-purpose computer comprising one or more processors should not be interpreted as excluding other computer components, and may include components such as memory, input / output devices and / or network interfaces in particular.

[0103] Although the above detailed description has illustrated, described, and pointed out novel features applicable to various embodiments, it will be understood that various omissions, substitutions, and changes may be made to the forms and details of the illustrated devices or processes without departing from the spirit of the disclosure. As will be recognized, specific embodiments of the technology disclosed herein may be implemented in a form that does not provide all the features and benefits described herein, because some features may be used or practiced separately from others. The scope of specific aspects of the technology disclosed herein is defined by the appended claims rather than by the foregoing description. Any modification within the meaning and scope of equivalents in the claims should be included within such scope.

Claims

Claim 1 A chemical mechanical planarization (CMP) system comprising: a polishing platen having a surface configured to polish a substrate; a slurry supply system configured to supply a slurry to the surface of the polishing platen; and a slurry recirculation system configured to collect the slurry from the polishing platen, filter the collected slurry, and provide the filtered slurry to the slurry supply system. Claim 2 In claim 1, the slurry recirculation system comprises: an effluent collection device including a collection trough configured to collect slurry flowing down from the edge of the grinding platen; a discharge system configured to receive the collected slurry from the collection trough; and a recovery system configured to receive the collected slurry from the discharge system and filter the collected slurry. Claim 3 In paragraph 2, the discharge system comprises a use slurry inlet including a first discharge port configured to receive the collected slurry from the collection trough and a second discharge port configured to receive a mixture of chemicals and deionized water flowing down from a component of the CMP system other than the polishing platen. Claim 4 A system according to claim 2 or 3, comprising a valve and a control system configured such that the discharge system sends the collected slurry to a main discharge port at the start of processing of the substrate and sends the collected slurry back to the recovery system after a preset time has elapsed after the start of processing of the substrate. Claim 5 A system according to any one of claims 2 to 4, wherein the recovery system comprises: a coarse filter configured to perform a first filtration of the collected slurry; a fine filter configured to receive the collected slurry from the coarse filter and perform a second filtration of the collected slurry; and a slurry return unit configured to receive the collected slurry from the fine filter and return the collected slurry to the slurry supply system. Claim 6 In claim 5, the recovery system further comprises: a slurry supply unit configured to supply a new slurry and an additive; and a mixer configured to receive the captured slurry from the microfiltration filter and receive the new slurry and the additive from the slurry supply unit, mix the captured slurry with the new slurry and the additive, and provide the captured slurry mixed with the new slurry and the additive to the slurry return unit. Claim 7 In claim 6, the recovery system further comprises a measuring controller configured to control the amount of the new slurry and the amount of the additive supplied from the slurry supply unit to the mixer. Claim 8 A system according to claim 7, wherein the measurement controller determines the removal rate of the processing of the substrate; determines whether the difference between the removal rate and the specified removal rate is greater than a preset threshold; and further configured to adjust the amount of the new slurry and / or the amount of the additive provided to the mixer in response to the determination that the difference between the removal rate and the specified removal rate is greater than the preset threshold. Claim 9 A system according to claim 7 or 8, wherein the recovery system further comprises one or more sensors configured to measure one or more properties of the captured slurry output from the microfiltration filter, and the instrumentation controller configured to adjust the amount of the new slurry and / or the amount of the additive provided to the mixer based on the one or more measured properties. Claim 10 A system comprising: an effluent collection device comprising a collection trough configured to collect slurry flowing down from the edge of a polishing platen of a chemical mechanical planarization (CMP) system as a slurry recirculation system; a discharge system configured to receive the collected slurry from the collection trough; and a recovery system configured to receive the collected slurry from the discharge system and filter the collected slurry, wherein the recovery system comprises a slurry return unit configured to return the filtered slurry to a slurry supply system of the CMP system. Claim 11 In claim 10, the device comprises a discharge system including a first discharge port configured to receive the collected slurry from the collection trough and a second discharge port configured to receive a mixture of chemicals and deionized water flowing down from a component of the CMP system other than the polishing platen. Claim 12 An apparatus according to claim 10 or 11, comprising a valve and a control system configured such that the discharge system sends the collected slurry to a main discharge port at the start of processing of the substrate and sends the collected slurry back to the recovery system after a preset time has elapsed after the start of processing of the substrate. Claim 13 An apparatus according to any one of claims 10 to 12, wherein the recovery system comprises a coarse filter configured to perform a first filtration of the captured slurry; and a fine filter configured to receive the captured slurry from the coarse filter and perform a second filtration of the captured slurry, and the slurry return unit is further configured to receive the captured slurry from the fine filter. Claim 14 The apparatus according to claim 13, wherein the recovery system further comprises: a slurry supply unit configured to supply a new slurry and an additive; and a mixer configured to receive the captured slurry from the microfiltration filter and receive the new slurry and the additive from the slurry supply unit, mix the captured slurry with the new slurry and the additive, and provide the captured slurry mixed with the new slurry and the additive to the slurry return unit. Claim 15 In claim 14, the device further comprises a metering controller configured to control the amount of the new slurry and the amount of the additive supplied from the slurry supply unit to the mixer. Claim 16 An apparatus according to claim 15, wherein the measuring controller determines the removal rate of the processing of the substrate; determines whether the difference between the removal rate and the specified removal rate is greater than a preset threshold; and further configured to adjust the amount of the new slurry and / or the amount of the additive provided to the mixer in response to the determination that the difference between the removal rate and the specified removal rate is greater than the preset threshold. Claim 17 An apparatus according to claim 15 or 16, wherein the recovery system further comprises one or more sensors configured to measure one or more properties of the captured slurry output from the microfiltration filter, and the instrumentation controller configured to adjust the amount of the new slurry and / or the amount of the additive supplied to the mixer based on the one or more measured properties. Claim 18 A method for collecting and reusing a slurry from a chemical mechanical planarization (CMP) system, comprising the steps of: polishing a substrate using a polishing platen surface of the CMP system; supplying a slurry to the polishing platen surface; collecting the slurry from the polishing platen; filtering the collected slurry; and providing the filtered slurry to a slurry supply system of the CMP system. Claim 19 A method according to claim 18, further comprising the steps of: collecting a slurry flowing down from the edge of the grinding platen through a collection trough; flowing the collected slurry from the collection trough into a discharge system; receiving the collected slurry from the discharge system into a recovery system; and filtering the collected slurry in the recovery system. Claim 20 In claim 19, the discharge system comprises a use slurry inlet including a first discharge port and a second discharge port, and the method further comprises the step of receiving the collected slurry from the collection trough using the first discharge port; and receiving a mixture of chemicals and deionized water flowing down from a component of the CMP system other than the polishing platen using the second discharge port. Claim 21 A method according to claim 19 or 20, further comprising the steps of sending the captured slurry to a main outlet at the start of processing of the substrate, and sending the captured slurry back to the recovery system after a preset time has elapsed after the start of processing of the substrate. Claim 22 A method according to any one of claims 19 to 21, further comprising: a step of performing coarse filtration of the captured slurry; a step of performing microfiltration of the captured slurry; and a step of returning the captured slurry to the slurry supply system after the coarse filtration and the microfiltration. Claim 23 A method according to claim 22, further comprising: a step of supplying a new slurry and an additive using a slurry supply unit; a step of receiving the captured slurry, which has undergone coarse filtration and microfiltration, and the additive from the slurry supply unit in a mixer; a step of mixing the captured slurry with the new slurry and the additive using the mixer; and a step of providing the captured slurry mixed with the new slurry and the additive to the slurry supply system. Claim 24 A method according to claim 23, further comprising the step of controlling the amount of the new slurry and the amount of the additive supplied from the slurry supply unit to the mixer. Claim 25 A method according to claim 24, further comprising: a step of determining a removal rate of the processing of the substrate; a step of determining whether the difference between the removal rate and the specified removal rate is greater than a preset threshold; and a step of adjusting the amount of the new slurry and / or the amount of the additive provided to the mixer in response to the determination that the difference between the removal rate and the specified removal rate is greater than the preset threshold. Claim 26 The method of claim 24 or 25 further comprises the step of measuring one or more properties of the captured slurry output from the microfiltration of the captured slurry, and the step of adjusting the amount of the new slurry and / or the amount of the additive provided to the mixer is also based on the one or more measured properties.

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