Holding apparatus, lithography apparatus, and article manufacturing method

Abstract

A holding support device comprises a holding support member for holding and supporting an object, a phase change material disposed within the holding support member or on the holding support surface of the object, which undergoes a phase change between an amorphous phase and a crystalline phase and undergoes a volume change accompanying the phase change, and a control member for controlling the heating of the phase change material using a heating member for heating the phase change material to deform the holding support surface by causing a volume change of the phase change material.

Description

Technology Field

[0001] The present invention relates to a holding support device, a lithography device, and a method for manufacturing an article. Background Technology

[0002] In the semiconductor manufacturing process, undesirable irregularities or distortions on the surface of a semiconductor substrate (hereinafter simply referred to as "substrate") affect the processing precision. Therefore, it has been proposed to provide a mechanism for deforming the substrate in a substrate holding and supporting mechanism that holds and supports the substrate, thereby correcting the irregularities or distortions of the substrate.

[0003] Patent Document 1 describes a method of controlling the unevenness of a substrate by driving a height control element, wherein a plurality of height control elements capable of changing height are arranged on a stage on which a substrate is mounted. As a height control element used for position control on the nanometer order, for example, a piezo element is used.

[0004] However, with piezoelectric elements, it can be difficult to control the position of a piezoelectric actuator, even for a short period. Generally, piezoelectric actuators exhibit hysteresis-like driving characteristics and displacement creep variations. Therefore, to achieve high-precision and stable driving, it is necessary to provide a separate sensor to measure the piezoelectric displacement and perform position control via a closed servo loop. In general, it is difficult to control the position of a piezoelectric actuator in an open loop.

[0005] Regarding the problem of such piezo actuators, Patent Document 2 proposes an application of an electrostatic actuator that can stably maintain and support a position by having minimal charge leakage. Prior art literature

[0006] Japanese Patent Publication No. 2013-026233 Japanese Patent Publication No. 2013-135218 The problem to be solved

[0007] However, as the precision required for substrate deformation becomes stricter due to the miniaturization of semiconductor devices, high stability and precision are required for actuators that deform the substrate. Since even the electrostatic actuator described in Patent Document 2 cannot have zero charge leakage, a substrate deformation mechanism utilizing a highly stable actuator is required.

[0008] The present invention provides a technology capable of controlling the shape of a substrate with high precision and stability. means of solving the problem

[0009] According to one aspect of the present invention, a holding support device is provided, comprising: a holding support member for holding and supporting an object; a phase change material disposed within the holding support member or on the holding support surface of the object, which undergoes a phase change between an amorphous phase and a crystalline phase and undergoes a volume change accompanying the phase change; and a control member for controlling the heating of the phase change material using a heating member for heating the phase change material to deform the holding support surface by causing a volume change of the phase change material. Effects of the invention

[0010] According to the present invention, a technology capable of controlling the shape of a substrate with high precision and stability can be provided.

[0011] Other features and advantages of the present invention will become apparent from the following description with reference to the accompanying drawings. Additionally, in the accompanying drawings, identical or similar components are given the same reference numerals. Brief explanation of the drawing

[0012] FIG. 1aa is a drawing illustrating the configuration of the holding support device and the substrate deformation treatment in Example 1. FIG. 1ab is a diagram illustrating the configuration of the holding support device and the substrate deformation treatment in Example 1. FIG. 1ac is a drawing illustrating the configuration of the holding support device and the substrate deformation treatment in Example 1. FIG. 1ba is a drawing illustrating the configuration of the holding support device and the substrate deformation treatment in Example 1. FIG. 1bb is a drawing illustrating the configuration of the holding support device and the substrate deformation treatment in Example 1. FIG. 1bc is a diagram illustrating the configuration of the holding support device and the substrate deformation treatment in Example 1. FIG. 2aa is a diagram illustrating the configuration of the holding support device and the substrate deformation treatment in Example 2. FIG. 2ab is a diagram illustrating the configuration of the holding support device and the substrate deformation treatment in Example 2. FIG. 2ac is a drawing illustrating the configuration of the holding support device and the substrate deformation treatment in Example 2. FIG. 2ba is a diagram illustrating the configuration of the holding support device and the substrate deformation treatment in Example 2. FIG. 2bb is a diagram illustrating the configuration of the holding support device and the substrate deformation treatment in Example 2. FIG. 2bc is a diagram illustrating the configuration of the holding support device and the substrate deformation treatment in Example 2. FIG. 3aa is a diagram illustrating the configuration of the holding support device and the substrate deformation treatment in Example 3. FIG. 3ab is a diagram illustrating the configuration of the holding support device and the substrate deformation treatment in Example 3. FIG. 3ac is a drawing illustrating the configuration of the holding support device and the substrate deformation treatment in Example 3. FIG. 3ba is a diagram illustrating the configuration of the holding support device and the substrate deformation treatment in Example 3. FIG. 3bb is a diagram illustrating the configuration of the holding support device and the substrate deformation treatment in Example 3. FIG. 3bc is a diagram illustrating the configuration of the holding support device and the substrate deformation treatment in Example 3. FIG. 4 is a diagram illustrating the configuration of a substrate processing system in Example 3. FIG. 5a is a diagram illustrating a method for measuring the displacement of a substrate. FIG. 5b is a diagram illustrating a method for measuring the displacement of a substrate. FIG. 6a is a diagram illustrating the configuration of the holding support device and the substrate deformation treatment in Example 4. FIG. 6b is a diagram illustrating the configuration of the holding support device and the substrate deformation treatment in Example 4. FIG. 6c is a diagram illustrating the configuration of the holding support device and the substrate deformation treatment in Example 4. FIG. 7 is a diagram illustrating the arrangement of phase change materials in Example 4. FIG. 8 is a diagram illustrating the arrangement of phase change materials in Example 5. FIG. 9 is a diagram illustrating the characteristics of a phase change material. Figure 10 is a flowchart illustrating substrate deformation processing. FIG. 11a is a drawing illustrating a method of making the upper surface of a protrusion inclined in Example 6. FIG. 11b is a drawing illustrating a method of making the upper surface of a protrusion inclined in Example 6. FIG. 12 is a drawing illustrating another method of inclined the upper surface of a protrusion in Example 6. FIG. 13a is a diagram illustrating a configuration for increasing the amount of upward deformation of a phase change material in Example 7. FIG. 13b is a diagram illustrating a configuration for increasing the amount of upward deformation of a phase change material in Example 7. FIG. 14 is a drawing illustrating the configuration of an exposure device using a holding support device. Specific details for implementing the invention

[0013] The attached drawings are included in the specification, constitute a part thereof, illustrate embodiments of the present invention, and are used to explain the principles of the present invention together with the description.

[0014] Embodiments are described in detail below with reference to the attached drawings. Furthermore, the following embodiments do not limit the invention covered by the patent claims. Although multiple features are described in the embodiments, not all of these multiple features are essential to the invention, and multiple features may be combined at will. Additionally, in the attached drawings, the same reference number is assigned to identical or similar components, and redundant descriptions are omitted.

[0015] <First Embodiment>

[0016] FIG. 1aa illustrates an example configuration of a holding support device (100) that holds and supports a plate, which is an object to be held and supported according to a first embodiment. In one example, the plate is a semiconductor wafer used in a lithography device, and in that case, the holding support device (100) is a substrate holding support device. Alternatively, the plate is a patterned plate (mask or reticle) used in an exposure device, which is a type of lithography device, and in that case, the holding support device (100) is a plate holding support device. Alternatively, the plate is a patterned mold used in an imprint device, which is a type of lithography device, and in that case, the holding support device (100) is a mold holding support device. Hereinafter, as an example, the plate is described as a substrate (105) (semiconductor wafer) used in a substrate processing device such as a lithography device.

[0017] A holding support device (100) is provided with a substrate holding support member (101) that adsorbs and holds a substrate (105), which is a plate. As a method of adsorbing the substrate (105) by the substrate holding support member (101), a vacuum method may be used to hold and support the substrate (105) by generating negative pressure between the substrate (105) and the substrate holding support surface (holding support surface) of the substrate holding support member (101). Alternatively, as a method of adsorbing the substrate (105) by the substrate holding support member (101), an electrostatic adsorption method may be used to hold and support the substrate (105) using electrostatic adsorption force.

[0018] The holding support device (100) further comprises a phase change material (102) and a control unit C that controls heat input to the phase change material (102). The control unit C controls the heating of the phase change material (102) using a heating unit that heats the phase change material (102) so as to deform the holding support surface by causing a volume change of the phase change material (102). In this embodiment, a heating unit (103) is disposed inside the substrate holding support unit (101). Although the phase change material (102) is disposed inside the substrate holding support unit (101) in FIG. 1aa, it may be disposed on the holding support surface of the substrate (the upper surface of the substrate holding support unit (101)).

[0019] In the present embodiment, the heating unit (103) includes a plurality of heating units. Each of the heating units (103) may include a heater element made of a resistive heating material for heating the phase change material (102). As the resistive heating material, one or more mixtures of copper, nickel alloy, chromium alloy, etc. may be used. The heater element generates heat by power supplied from a power source not shown. Alternatively, each of the plurality of heating units (103) may include an induction heating element that heats using electromagnetic induction generated by a coil placed around the ferromagnetic material. Although the plurality of heating units (103) are positioned below the phase change material (102) in FIG. 1aa, they may be positioned inside the phase change material (102) or between the phase change material (102) and the substrate holding support surface of the substrate holding support unit (101). Variations regarding the arrangement of the phase change material (102) and the plurality of heating parts (103) will be described later.

[0020] Referring to FIG. 9, a phase change material (102) will be described. The phase change material (102) is a material that undergoes a phase change between a non-crystalline phase (amorphous phase) and a crystalline phase, and undergoes a volume change accompanying the phase change. FIG. 9 is a diagram illustrating the trend of the crystal structure and the volume characteristics of the phase change material according to temperature. When the phase change material is heated from room temperature RT to the melting point Tm and then rapidly cooled, the phase change material becomes a supercooled liquid, and at room temperature, it becomes an amorphous structure with a large volume. On the other hand, when the phase change material is heated from room temperature RT to a temperature exceeding the glass transition temperature Tg and then slowly cooled, the phase change material becomes a crystalline structure with a small volume at room temperature. That is, by changing the heating and cooling methods, the structure at room temperature can be changed. As shown in FIG. 9, the volume tends to be small in a crystalline structure where the elements are aligned, and the volume tends to be large in an amorphous structure where the elements are random.

[0021] Phase change materials are being put into practical use in the field of rewriteable recording media. For example, chalcogenide-based phase change material Ge-Sb-Te (hereinafter GST) is widely used as a recording layer for rewriteable optical discs such as DVDs or Blu-ray (registered trademark) discs, or as a recording material for non-volatile memory. In GST, the volume changes by about 5% from amorphous to crystalline. Control unit C controls a plurality of heating units (103) to deform the holding support surface of the holding support unit (101) by causing a volume change of the phase change material (102) by utilizing this characteristic.

[0022] (Example 1)

[0023] Hereinafter, a specific example of a method for deforming a substrate in a holding support device (100) will be described. First, with reference to FIGS. 1aa to 1ac and FIG. 10, Example 1 relating to a first embodiment will be described.

[0024] In process S0, the control unit C determines whether the target shape can be achieved by the amount of shape correction due to the volume shrinkage of the crystallization of the phase change material (102) in the current situation, that is, whether the correction by crystallization is sufficient. If it is determined that the correction by crystallization is not sufficient, the process proceeds to the amorphization process of process S1. If it is determined that the correction by crystallization is sufficient, the process skips process S1 and proceeds to the shape measurement of S2.

[0025] In process S1, the control unit C drives (supplies power) all of the multiple heating units (103) to heat the phase change material (102) to a temperature exceeding its melting point Tm, and then rapidly cools it by momentarily cutting off the heating. Rapid cooling may be performed by momentarily cutting off the power supply to the multiple heating units (103), or forced cooling by heat exchange using a refrigerant may be employed. Due to rapid cooling, the phase change material (102) becomes an amorphous phase and reaches a state with the largest volume (first process). In this case, since the phase change material (102) is above its melting point, it is preferable to have as little external force as possible; therefore, when heating, the substrate (105) can be temporarily removed from the substrate holding support (101).

[0026] In process S2, the control unit C measures the shape of the measurement target using a measurement unit as described below. The shape of attention here is the unevenness of the surface of the substrate, that is, the amount of deformation in the out-of-plane direction of the surface of the substrate. Accordingly, the measurement result includes information on the amount of deformation in the out-of-plane direction of such a surface of the substrate. The measurement target may be the surface of the substrate (105) held and supported by the substrate holding support member (101) as shown in FIGS. 5a and 5b, or, if the substrate (105) is retracted, the surface of the substrate holding support member (101) (substrate holding support surface). However, considering distortion caused by the substrate holding support member (101) holding and supporting the substrate (105) or unevenness measurement error, the error factor can be reduced by making the substrate (105) held and supported by the substrate holding support member (101) the measurement target. In the following description of Example 1, the surface of the substrate (105) held and supported by the substrate holding support member (101) is described as the object of measurement. Additionally, a measurement substrate may be used instead of the substrate (105).

[0027] As a measurement method, either a method using a displacement measuring unit (106) that measures local displacement as shown in FIG. 5a, or a method using a planar displacement measuring unit (1061) that measures a wide range of irregularities collectively as shown in FIG. 5b may be adopted. As a sensor used in FIG. 5a, a distance measuring interferometer, a triangulation displacement meter, etc., may be used. By driving one or both of the displacement measuring unit (106) and the substrate holding support unit (101) in the left-right and depth directions of the ground (relative driving), the height of any position on the substrate holding support unit (101) or the substrate (105) is measured. In the collective measurement method shown in FIG. 5b, for example, a planar interferometer is used as the planar displacement measuring unit (1061). However, since a planar interferometer having a measurement range capable of measuring the entire surface of the substrate (105) is expensive, a planar displacement measuring unit with a measurement range narrower than that of the substrate (105) may be used as shown in FIG. 5b. In that case, the entire surface of the substrate (105) can be measured by driving the planar displacement measuring unit (1061) and the substrate holding support (101) relative to each other, as in FIG. 5a.

[0028] Generally, in a method of relative driving between a displacement measuring unit (106) and a substrate holding support unit (101) as in FIG. 5a, the displacement measuring unit (106) and / or the substrate holding support unit (101) are affected by the driving error of the stage. Therefore, in order to improve measurement precision, measurement by a planar displacement measuring unit that measures a wide range collectively can reduce measurement error.

[0029] The area of ​​the collective measurement range of the planar displacement measuring unit (1061) should be a size that includes the shot area, which is the largest configuration unit of the device manufactured on the substrate (105). In that case, the shot area can be measured collectively, and the error caused by relative driving can be reduced. In addition, by making the area of ​​the collective measurement range slightly larger than the shot area, the measurement can be extended to the entire surface of the substrate (105) by stitching to match the overlap of displacement measurements with adjacent shot areas.

[0030] In process S3, the control unit C determines a portion of the heating units (specifically one or more heating units) among the plurality of heating units (103) to perform heating, based on the measurement result of the shape of the substrate holding support surface or the surface of the substrate (105) measured in process S2 as illustrated in FIG. 1ab. The control unit C supplies power to the determined portion of the heating units among the plurality of heating units (103) according to the position and amount of lowering the height of the substrate holding support (101). By doing so, the phase change material (102) is partially heated. Specifically, in the area on the substrate surface to be greatly concave, the temperature of a specific heating unit is increased or the amount of heat input is increased so that the glass transition temperature Tg is exceeded over a wide range of the phase change material (102). Afterward, by slow cooling, the phase change material (102) in the range exceeding the glass transition temperature Tg undergoes a phase change into a crystal and shrinks in volume (second process). Slow cooling can be performed, for example, by gradually reducing the amount of power supplied (heat input) to the heated heating unit. As a result, as shown in FIG. 1ac, the surface of the substrate holding support (101) that holds and supports the substrate can be made concave. The unevenness of the substrate holding support surface can be controlled by changing the range of shrinkage that occurs as a phase change into a crystal depending on the heating state of the heating unit.

[0031] As an example, a case is described in which a phase change material (102) is used that has a 10% volume change during phase change. In FIG. 1ab, if the temperature of the entire phase change material (102) is raised to exceed the glass transition temperature Tg at the position of the rightmost heating part among the plurality of heating parts (103) and then slowly cooled, the phase change material (102) undergoes a 10% volume shrinkage. As an example, if the thickness dimension of the phase change material (102) is 10 μm, the dimension in the thickness direction shrinks by 0.01 μm due to the 10% volume change.

[0032] Although GST was used as an example of a phase change material (102), it can also be implemented with materials of the Ge-Te, Ge-Sb-Te, Ge-In-Sb-Te, and Ag-In-Sb-Te systems. All of these are materials that exhibit a volume change of several percent due to phase change, and the optimal phase change material can be designed and selected based on the relationship between the substrate holding support (101) and the plurality of heating parts (103).

[0033] In process S4, the control unit C measures the shape of the substrate (105) to be measured, just as in process S2. Next, in process S5, the control unit C determines whether the difference between the shape of the substrate (105) and the target shape is within an allowable range. If the difference is not within an allowable range, the process returns to process S3, and the control unit C again performs heating and cooling to modify the shape. However, while repeating the modification of process S3 from process S5, the phase change material (102) completely crystallizes, making it impossible to reduce the volume any further. Therefore, in process S6, the control unit C determines whether the phase change material (102) is within a range where deformation correction is possible. If the phase change material (102) is not within a range where deformation correction is possible, the process returns to process S1, and the control unit C resets the phase change material (102), that is, heats the phase change material (102) above its melting point again and rapidly cools it to make it amorphous.

[0034] The above describes a method for controlling the irregularities (i.e., the shape in the out-of-plane direction) of the substrate (105). Below, with reference to FIGS. 1ba to 1bc, a case in which the shape in the in-plane direction of the substrate (105) is controlled in the deformation of the substrate (105) of Example 1 is described. In this case as well, the flowchart of FIG. 10 may be applied.

[0035] Deformation in the in-plane direction is generally called distortion. The substrate (105) shown in FIG. 1ba is represented in a vertical grid shape for convenience in explaining the state of distortion, and in FIG. 1bb and FIG. 1bc, the distribution of distortion after deformation is represented as the density of the vertical grid.

[0036] Similar to the case of substrate unevenness deformation described above, in process S1, the control unit C drives all of the plurality of heating units (103) to heat the phase change material (102) above its melting point Tm, and then rapidly cools it by momentarily cutting off the heating. Due to the rapid cooling, the phase change material (102) becomes an amorphous phase and reaches a state with the largest volume. In this case, since the phase change material (102) is above its melting point, it is preferable to have as little external force as possible; therefore, when heating, the substrate (105) can be temporarily removed from the substrate holding support (101).

[0037] In process S2, while the substrate (105) is held and supported by the substrate holding support member (101), the control unit C measures the distortion of the substrate (105). The substrate (105) is held and supported by the substrate holding support member (101) in order to transmit the distortion of the deformed substrate holding support member (101) to the substrate (105) in the next process S3. The measurement of the distortion of the substrate (105) is performed, for example, by measuring a pattern placed on the surface of the substrate (105). Accordingly, in this embodiment, the measurement result includes information on the amount of deformation in the in-plane direction of the surface of the substrate.

[0038] Next, the deformation treatment of the substrate (105) in process S3 will be described. While the substrate (105) is held and supported by the substrate holding support member (101), the control unit C supplies power to some of the plurality of heating units (103) (specifically one or more heating units) based on shape data obtained by measurement in process S2, as illustrated in FIG. 1bb. By doing so, the phase change material (102) is locally heated, thereby distorting the substrate holding support member (101) and the substrate (105) adsorbed and held thereon. The amount of distortion imparted to the substrate (105) may be derived based on the shape data measured in process S2, or it may be derived by adding the amount of distortion inherent in the substrate (105) measured in advance to the shape data obtained by measurement in process S2. Alternatively, the amount of distortion caused by substrate processing by a substrate processing device using a holding support device (100) may be determined in advance, and the amount of distortion applied to the substrate (105) to reduce the distortion caused by substrate processing may be derived.

[0039] In the heating and deformation of the phase change material (102) in process S3, as illustrated in FIG. 1bb, the substrate (105) is adsorbed and supported by the substrate holding support member (101), and power supply to each of the plurality of heating members (103) is controlled so that the phase change material (102) is heated locally. At this time, in the area of ​​the substrate (105) where distortion is to be caused by a large amount of shrinkage, the temperature of the heating member is increased or the amount of heat input is increased so that the glass transition temperature Tg is exceeded over a wide range of the phase change material (102). Afterward, by slow cooling, the phase change material (102) in the range exceeding the glass transition temperature Tg undergoes a phase change into a crystal and shrinks in volume. As a result, the local shrinkage of the substrate holding support member (101) is also transmitted to the substrate (105), and distortion can be imparted to the substrate (105). The distortion of the substrate (105) can be controlled by changing the range of shrinkage through phase change into a crystal depending on the heating state of the heating part.

[0040] Subsequently, similar to the case of substrate unevenness control in FIGS. 1aa to 1ac, the control unit C measures the distortion of the substrate (105) in process S4 and determines whether the difference between the amount of distortion of the substrate (105) and the target amount of distortion is within an allowable range in process S5. In addition, in process S6, the control unit C determines whether the phase change material (102) is within a range where deformation correction is possible, and repeats the processing according to the results of the determination in process S5 and process S6.

[0041] (Example 2)

[0042] In Example 1 illustrated in FIGS. 1aa to 1bc, a configuration was shown in which the deformation of a substrate or a holding support surface is controlled by the temperature or heat amount of some of the plurality of heating units (103). In contrast, in Example 2, as illustrated in FIGS. 2aa to 2ac, the plurality of heating units (103) has more heating units than in Example 1, and the number of heating units is driven ON / OFF according to the amount of deformation to be caused in the vicinity of the area to be deformed.

[0043] Regarding the control procedure, the flowchart of FIG. 10 may be applied in Example 2 as well as in Example 1. In FIG. 2ab, as in FIG. 1ab of Example 1, the shrinkage of the phase change material (102) is controlled by turning on the heating unit near the portion of the substrate (105) to be concave among the plurality of heating units (103). As a result, as shown in FIG. 2ac, the surface of the substrate holding support (101) that holds and supports the substrate can be made concave.

[0044] The difference between Example 1 and Example 2 is explained. In Example 1, the heat input of each of the plurality of heating units (103) is controlled in multiple gradations. In contrast, in Example 2, each of the plurality of heating units (103) is controlled ON / OFF, and the heating of the phase change material (102) is controlled by the density of the arrangement of the heating units that are turned ON. In FIG. 2ab, in process S3, the heating units turned ON in the area to be greatly concave are dense, and the heating units (103) turned ON in the area to be slightly concave are sparse. In order to control the heating area by the ON / OFF of the plurality of heating units (103), it is preferable that the plurality of heating units (103) be arranged more densely than the short period wavelength of the periodic component within the substrate surface in the target shape or target distortion of the substrate (105).

[0045] FIGS. 2ba to 2bc illustrate deformation treatment with attention to the in-plane direction. Since the details of the treatment are the same as those described in FIGS. 1ba to 1bc above, the explanation is omitted.

[0046] In addition, in this embodiment 2, not only can a heating unit that raises the temperature be selected among a plurality of heating units (103), but the phase change of the phase change material (102) may also be controlled by simultaneously changing the temperature or heat amount of each heating unit, just as in embodiment 1.

[0047] (Example 3)

[0048] Example 3 is configured to heat a phase change material (102) from the outside of a substrate holding support member (101). An example of the configuration of Example 3 is illustrated in FIG. 3aa. In FIG. 3aa, the phase change material (102) is disposed inside the substrate holding support member (101), but a plurality of heating members (1031) are disposed spaced upward from the substrate holding support surface of the substrate holding support member (101) with the substrate (105) in between. Since the plurality of heating members (1031) heat locally from a spaced position, they may be configured to irradiate electromagnetic radiation, such as a laser, onto the substrate holding support surface. However, if the substrate holding support member (101) and the plurality of heating members (1031) can be disposed in close proximity, the plurality of heating members (1031) may be configured to include electromagnetic induction heating or heaters. A plurality of heating units (1031) may be configured to irradiate electron radiation that penetrates the substrate (105). In one example, when the substrate is a silicon wafer, a plurality of heating units (1031) may be configured to irradiate infrared light that penetrates the silicon. Accordingly, the substrate holding support (101) can simultaneously perform measurement of process S2 and deformation of the substrate of process S3 while holding and supporting the substrate (105) (or measurement substrate) which is a silicon wafer, thereby reducing errors associated with substrate replacement.

[0049] Regarding the control procedure, the flowchart of FIG. 10 may be applied to Example 3 as well, just as it is applied to Examples 1 and 2. Referring to FIG. 3aa to 3ac, a process for deforming the irregularities on the surface of a substrate (105) is described. In process S1, the control unit C heats and rapidly cools the phase change material (102) using a plurality of heating units (1031) to make it amorphous. In process S2, the control unit C measures the irregularities on the surface of the substrate (105) to be measured or on the substrate holding support surface of the substrate holding support. Then, in process S3, the control unit C heats and slowly cools the heating unit among the plurality of heating units (1031) corresponding to the part of the phase change material (102) to be concave to a temperature equivalent to the glass transition temperature Tg, thereby shrinking it. The control unit C measures the shape of the measurement target in process S4 and determines whether the difference between the deformation amount of the substrate (105) and the target deformation amount is within an allowable range in process S5. In process S6, the control unit C determines whether the phase change material (102) is within a deformable range and repeats the processing according to the determination results of processes S5 and S6.

[0050] Next, with reference to FIGS. 3ba to 3bc, a method for controlling the in-plane shape of the substrate (105) will be explained.

[0051] In process S1, the control unit C drives all of the plurality of heating units (1031) to heat the phase change material (102) to a temperature exceeding its melting point Tm and rapidly cools it. Due to the rapid cooling, the phase change material (102) becomes an amorphous phase and reaches a state with the largest volume. In this case, since the phase change material (102) is above its melting point, it is preferable to have as little external force as possible; therefore, when heating, the substrate (105) can be temporarily removed from the substrate holding support (101).

[0052] In process S2, while the substrate (105) is held and supported by the substrate holding support member (101), the control unit C measures the distortion of the substrate (105). The substrate (105) is held and supported by the substrate holding support member (101) in order to transmit the distortion of the distorted substrate holding support member (101) to the substrate (105) in the next process S3. The measurement of the distortion of the substrate (105) is performed, for example, by measuring a pattern placed on the surface of the substrate (105).

[0053] Next, in process S3, while the substrate (105) is adsorbed and held by the substrate holding support member (101), the control unit C supplies power to one or more specific heating units among the plurality of heating units (1031) based on shape data obtained by measurement in process S2, as illustrated in FIG. 3bb. By doing so, the phase change material (102) is locally heated. Afterward, by performing slow cooling, the phase change material (102) is deformed, which can distort the substrate holding support member (101) and the substrate (105) adsorbed and held thereon. As described above, in this case, the plurality of heating units (1031) may be configured to irradiate electron radiation that penetrates the substrate (105) or the measurement substrate.

[0054] As with the aforementioned FIGS. 1ba to 1bc, the phase change material (102) in the range exceeding the glass transition temperature Tg undergoes a phase change into a crystal, causing the volume to shrink, and as a result, the local shrinkage of the substrate holding support (101) is also transmitted to the substrate (105), thereby imparting distortion to the substrate (105).

[0055] In FIGS. 3aa to 3ac and FIGS. 3ba to 3bc, as in Example 1, the heating unit (1031) is composed of a plurality of heating units, but there may be only one heating unit. In that case, the position at which the phase change material (102) is heated may be changed by changing the relative position between the heating unit (1031) and the substrate holding support (101). The relative position between the heating unit (1031) and the substrate holding support (101) may be changed by driving one or both of the heating unit (1031) and the substrate holding support (101) in the left-right and depth directions of FIGS. 3aa to 3ac and FIGS. 3ba to 3bc. By doing so, the heating position of the phase change material (102) may be changed. If the heating unit (1031) is configured to irradiate electron radiation such as laser light, the heating position of the phase change material (102) may be driven to an arbitrary position using a deflection device such as a galvanometer scanner. That is, the heating unit (1031) may include a galvanometer scanner that deflects electron radiation so that electron radiation generated from a radiation source is irradiated onto each of one or more parts of the phase change material (102).

[0056] In the heating section (1031), the heat input to the phase change material (102) may be controlled by a drawing device that partially blocks or desensitizes the wide-width light that heats a wide area collectively. Suitable drawing devices for this case include liquid crystal shutters or MEMS micromirror driving elements.

[0057] FIG. 4 illustrates an example configuration of a substrate processing system (1) comprising a holding support device (100) and a substrate processing device (110) utilizing the same. The holding support device (100) has a substrate holding support member (101) and a phase change material (102). The substrate processing device (110) has a processing unit (108) for processing a substrate (105) held and supported by the holding support device (100). The processing unit (108) includes a substrate processing mechanism (109) for processing the substrate. In this embodiment, a heating unit (1031) and a displacement measuring unit (106) are disposed outside the substrate processing device (110). Additionally, as described above, the heating unit (1031) may include a single heating unit or a plurality of heating units. From the perspective of productivity of the substrate processing device (110), it is preferable that the measurement process of processes S2 and S4 and the heating process of processes S1 and S3 be performed in parallel with the substrate processing at the location where the substrate processing of the substrate processing device (110) is performed (a location below the substrate processing mechanism (109)). However, there may be cases where the displacement measurement unit (106) and the heating unit (1031) cannot be placed within the processing unit (108) due to placement constraints of the substrate processing mechanism (109), etc. Therefore, in FIG. 4, a holding support device (100) is placed at a location outside the substrate processing device (110), and deformation processing of the substrate holding support surface is performed there using the heating unit (1031) and the displacement measurement unit (106). After the deformation process is completed and the substrate is retained and supported, the substrate retaining support part (101) of the retaining support device (100) is brought into the substrate processing device (110) accompanied by the substrate (105) by a conveying mechanism not shown. Thus, from the perspective of productivity, it is preferable for the retaining support device (100) to be located inside the substrate processing device (110), but as described above, depending on the placement constraints of the substrate processing mechanism (109), it may be provided outside the substrate processing device (110).By providing a holding support device (100) outside the substrate processing device (110), the dimensional constraints of the unit of the holding support device (100) are relaxed, so it is possible to configure, for example, a displacement measuring unit with higher precision.

[0058] <Second Embodiment>

[0059] Referring to FIGS. 6a to 6c, a method for deforming a substrate by a holding support device (100) in a second embodiment is described as Example 4.

[0060] (Example 4)

[0061] In FIG. 6a, the substrate holding support portion (101) of the holding support device (100) has a plurality of convex protrusions (1011) that support the substrate. In a substrate processing device, when the substrate holding support portion (101) holds and supports the substrate, the substrate surface is locally deformed due to fine particles getting stuck between the substrate and the substrate holding support portion (101). Such a plurality of protrusions (1011) are employed as a countermeasure to the problem. By making contact with the substrate only at the apex of the plurality of protrusions (1011), the contact area with the substrate is reduced, thereby reducing the probability of particle getting stuck.

[0062] The phase change material (102) is disposed on the upper surface of a plurality of protrusions (1011). In FIG. 6a, the phase change material (102) is disposed only on the upper surface of the plurality of protrusions (1011), but as shown in FIG. 7, it may be disposed including not only the plurality of protrusions (1011) but also the surface of the substrate holding support (101). The placement of the phase change material (102) as shown in FIG. 7 can be realized by depositing the phase change material (102) on the substrate holding support (101) by a film deposition method such as sputtering, for example. In this embodiment, the manner of placement of the phase change material (102) on the plurality of protrusions (1011) may be either FIG. 6a or FIG. 7, and is appropriately designed taking into account the processing method employed.

[0063] Additionally, an unillustrated protective layer for protecting the phase change material (102) may be coated on the upper surface of the phase change material (102). In this case, the protective layer is preferably made of a material through which electron radiation from the heating unit (1031) passes.

[0064] The operation leading to the uneven deformation of the substrate (105) in Example 4 can be controlled according to the flowchart illustrated in FIG. 10.

[0065] By driving the heating part (1031) and the substrate holding support part (101) relative to each other in the left-right and depth directions of the surface, the phase change material (102) in the plurality of protrusions (1011) is heated. Alternatively, the phase change material (102) in the plurality of protrusions (1011) may be heated using a deflection device such as a galvanometer scanner. Alternatively, as in Example 3, the heat input to the phase change material (102) may be controlled using a liquid crystal shutter or a MEMS micromirror driving element.

[0066] The control flow of the holding support device (100) in Example 4 is the same as in Example 3, and first, in process S1, the phase change material (102) is amorphized, and in process S2, the shape is measured. In the measurement in process S2, as in Example 1, the measurement target may be the surface of the substrate (105) held and supported by the substrate holding support member (101), or the upper surface of the plurality of protrusions (1011) in a state where the substrate (105) is not held and supported by the substrate holding support member (101).

[0067] As for the measurement method, either a method using a displacement measuring unit (106) that measures local displacement as shown in FIG. 5a, or a method using a planar displacement measuring unit (1061) that measures a wide range of irregularities collectively as shown in FIG. 5b may be adopted. As described in Example 1, in order to improve measurement precision, measurement using a planar displacement measuring unit that measures a wide range collectively is suitable because it can reduce measurement errors.

[0068] In process S3, based on the shape measurement result in process S2, the phase change material (102) of the area to be concave is heated to a temperature equivalent to the glass transition temperature Tg and shrunk using a heating unit (1031) (Fig. 6b). Next, in process S4, the shape of the measurement target is measured, and in process S5, the processes of processes S3 to S6 are repeated until it is determined that the difference between the measured shape and the target shape is within an allowable range. Fig. 6c shows an example of the controlled state of the phase change material (102) when the difference between the measured shape and the target shape is within an allowable range.

[0069] In addition, in this embodiment as well, as shown in FIG. 4, the configuration may be such that heating of the phase change material (102) using a heating unit (1031) and measurement of the shape of the phase change material (102) using a displacement measuring unit are performed outside the substrate processing device.

[0070] (Example 5)

[0071] FIG. 8 illustrates an example of the arrangement of phase change materials in Example 5. In FIG. 8, a plurality of phase change materials (1022) are arranged inside a substrate holding support member (101). The plurality of phase change materials (1022) may be understood as, for example, the phase change material (102) shown in FIG. 1aa divided into a plurality. By dividing the phase change materials into a plurality of parts, only one or more phase change materials placed in the part where unevenness or distortion is to be caused among the plurality of phase change materials (1022) can be heated at a pinpoint. By doing so, the controllability of deformation within the surface of the substrate (105) in the holding support device (100) can be improved. In addition, in the phase change material (102) illustrated in FIG. 1aa, the temperature distribution is continuous, but in the case of multiple phase change materials (1022), the temperature change between them is divided into steps, so abrupt changes in surface irregularities and distortions can be generated in the direction within the substrate plane. In addition, a separation wall may be arranged to reduce heat conduction between adjacent phase change materials in the multiple phase change materials (1022). By such a separation wall, the temperature change between adjacent phase change materials can be divided.

[0072] (Example 6)

[0073] Regarding the above-described embodiment 4, the phase change material (102) disposed in each of the plurality of protrusions (1011) shown in FIG. 6a can be further divided into a plurality of regions. FIG. 11a is a plan view of one of the plurality of protrusions (1011) in the substrate holding support (101) viewed from the substrate side, and FIG. 11b is a side view of the protrusion (1011) of FIG. 11a. As shown in FIG. 11a, a plurality (e.g., four) of phase change materials (102) are disposed inside one protrusion. As an example, in process S3, if only the phase change material (102) on the right side of FIG. 11b is driven (heat input), the volume of only the phase change material (102) on the right side shrinks as indicated by the dashed line. In this way, by varying the amount of heat input to each of the multiple phase change materials within the protrusion, the upper surface of the protrusion (1011) can be inclined. Additionally, in FIG. 11a, four phase change materials (102) are arranged in one protrusion as an example, but the number of phase change materials arranged is not limited to a specific number. However, in order to incline the upper surface of the protrusion at any angle, it is preferable to arrange at least three phase change materials in one protrusion.

[0074] Referring to FIG. 12, another method of slanting the upper surface of the protrusions is described. In FIG. 12, a single phase change material (102) is disposed on each of the plurality of protrusions (1011). Here, a distribution of heat input to the phase change material (102) can be provided. For example, in process S3, if a distribution is provided such that the heat input to the left of the phase change material (102) in FIG. 12 increases, the amount of shrinkage increases as the phase change area (1021) of the phase change material (102) faces to the left, so the upper surface of the protrusions (1011) can be slanted downward to the left.

[0075] (Example 7)

[0076] Referring to FIGS. 13a and 13b, an example of relatively increasing the deformation amount of the protrusion (1011) is described.

[0077] In the above-described embodiment 4 (Figs. 6a to 6c), a phase change material (102) is placed on the upper surface of the protrusion (1011), and deformation of the substrate holding support surface is realized by the volume change due to the phase change of the phase change material (102), but the volume change amount of the phase change material (102) is limited. Therefore, in order to increase the amount of deformation of the phase change material (102) upward, a protrusion void (107) is provided near the lower part of the phase change material (102) placed on the protrusion (1011), as shown in Fig. 13a. The expansion rate due to the phase change of the phase change material (102) is greater than the thermal expansion rate of the protrusion void (107). Therefore, when the phase change material (102) becomes amorphous and expands, as shown in FIG. 13b, the end of the phase change material (102) bends toward the protruding void (107), similar to bimetal deformation, and accordingly, the central part of the phase change material (102) bulges upward. By doing so, the amount of upward deformation of the phase change material (102) can be increased.

[0078] <Third Embodiment>

[0079] In the substrate processing system (1) illustrated in FIG. 4, the substrate processing device (110) using the holding support device (100) may be any of the lithography devices (exposure device, imprint device, charged particle beam drawing device, etc.). An exposure device is a device that forms a latent image corresponding to the pattern of the original plate on the photoresist by exposing the photoresist supplied on the substrate through the original plate. An imprint device is a device that forms a pattern on the substrate by curing the imprint material while the mold (original plate) is in contact with the imprint material supplied on the substrate. A charged particle beam drawing device is a device that forms a latent image on the photoresist by drawing a pattern on the photoresist supplied on the substrate using a charged particle beam.

[0080] Alternatively, the substrate processing device (110) may be any of a film deposition device (CVD device, etc.), a processing device (laser processing device, etc.), or an inspection device (overlay inspection device, etc.). Alternatively, the substrate processing device (110) may be a coating and developing device (coater / developer) that performs a coating treatment of a resist material (adhesive material) on a substrate as a pretreatment for lithography processing, and performs a developing treatment as a posttreatment for lithography processing.

[0081] Hereinafter, to provide a specific example, an example is described in which a substrate processing device (110) is configured as an exposure device. FIG. 14 illustrates the configuration of an exposure device (110A) using a holding support device (100). As also illustrated in FIG. 4, the holding support device (100) may be installed outside the exposure device (110A). In the holding support device (100), deformation processing of the substrate holding support surface is performed using a heating unit (1031) and a displacement measuring unit (106). Additionally, as previously described, the heating unit (1031) may include a single heating unit or a plurality of heating units. After the deformation processing is completed and the substrate is held and supported, the substrate holding support unit (101) of the holding support device (100) is brought into the exposure device (110A) accompanied by the substrate (105).

[0082] The exposure device (110A) is an exposure device that performs exposure on each of a plurality of shot areas of a substrate, and is, for example, a step-and-scan type scanning exposure device that scans the substrate by slit light. The exposure device (110A) includes an illumination optical system (10), a mask stage (12), a projection optical system (13), and a control device (22). Here, the substrate holding support (101) that is brought in functions as a substrate stage that moves in the XY direction. The control device (22) is configured, for example, by a computer device including a CPU and memory, and controls the exposure device (110A) comprehensively. That is, the control device (22) controls the process of transferring a pattern formed on the original mask (11) to the substrate (105) (the process of scanning the substrate (105)). In addition, here, the function of the above-mentioned control unit C is realized by the control device (22).

[0083] The illumination optical system (10) shapes light emitted from a light source (not shown) into a slit light having a shape such as a long strip or arc in the X direction, for example, by means of a light-blocking member such as a masking blade included therein, and illuminates a part of the mask (11) with the slit light. The mask (11) and the substrate (105) are each held and supported by a mask stage (12) and a substrate holding support (101) (substrate stage), and are each placed at positions that are optically nearly conjugate (object surface and upper surface of the projection optical system (13)) through a projection optical system (13). The projection optical system (13) projects the pattern of the mask (11) onto each of a plurality of shot areas of the substrate (105) held and supported by the substrate holding support (101). Specifically, the projection optical system (13) has a predetermined projection magnification (e.g., 1 / 2 or 1 / 4) and projects a pattern formed on the mask (11) onto a substrate by slit light. Then, the mask stage (12) and the substrate holding support (101) are configured to be movable in a direction orthogonal to the optical axis direction (Z direction) of the projection optical system (13) (e.g., Y direction), and are scanned relatively at a speed ratio according to the projection magnification of the projection optical system (13) while synchronously with each other. By doing so, the irradiation area is scanned in the Y direction on the substrate, and the pattern formed on the mask (11) can be transferred to the shot area on the substrate. Then, by sequentially repeating such scanning exposure for each of the multiple shot areas on the substrate while moving the substrate holding support (101), the exposure processing on one substrate (105) can be completed.

[0084] The details of the deformation treatment of the substrate holding support surface of the holding support device (100) are as described in the first and second embodiments. In carrying out the deformation treatment, it is preferable to have a timing for replacing the substrate (105) or a timing for stopping exposure to the substrate (105) through various calibrations of the device.

[0085] <Effective form of method for manufacturing an article>

[0086] The method for manufacturing an article according to an embodiment of the present invention is suitable for manufacturing articles such as microdevices, such as semiconductor devices, or devices having a microstructure. The method for manufacturing an article according to the present embodiment includes a process of transferring a pattern of a plate onto a substrate using the lithography apparatus (such as an exposure apparatus, an imprint apparatus, or a drawing apparatus) and a process of processing the substrate on which the pattern has been transferred in such a process. In addition, the manufacturing method includes other well-known processes (oxidation, film formation, deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.). The method for manufacturing an article according to the present embodiment is advantageous compared to conventional methods in at least one of the performance, quality, productivity, and production cost of the article.

[0087] The invention is not limited to the above embodiments, and various changes and modifications are possible without departing from the spirit and scope of the invention. Accordingly, claims are attached to disclose the scope of the invention.

[0088] The present application claims priority based on Japanese patent application No. 2022-024019 filed on February 18, 2022, and incorporates the entire contents of the application herein by reference.

Claims

Claim 1 A holding support device for supporting an object, comprising a holding support portion having a plurality of protrusions for supporting the object, wherein at least a portion of the plurality of protrusions has a phase change material disposed therein that undergoes a phase change between an amorphous phase and a crystalline phase and undergoes a volume change accompanying the phase change, wherein the phase change material undergoes a volume change upon heating, and wherein the height of the portion of the plurality of protrusions where the phase change material is disposed changes due to the volume change of the phase change material. Claim 2 A retaining support device according to claim 1, characterized by changing the height of a protrusion portion on which the phase change material is disposed by performing a first process of amorphizing the phase change material by heating the phase change material to a temperature exceeding its melting point and then cooling it, and a second process of partially shrinking the volume of the phase change material by heating a portion of the phase change material to a temperature exceeding its glass transition temperature and then cooling it after the first process. Claim 3 A holding support device according to paragraph 2, wherein the portion of the phase change material heated in the second process is determined based on the measurement result of the shape of the holding support surface that supports the object in the holding support member, or the surface of the object held and supported by the holding support member. Claim 4 A holding support device according to paragraph 3, wherein the measurement result includes information on the amount of out-of-plane deformation of the surface of the object held and supported by the holding support member. Claim 5 A holding support device according to paragraph 3, wherein the measurement result includes information on the amount of deformation in the in-plane direction of the surface of the object held and supported by the holding support member. Claim 6 A holding support device according to paragraph 3, further comprising a measuring unit for measuring the shape of the surface of an object held and supported by the holding support surface or the holding support member. Claim 7 A holding support device according to claim 6, wherein the second process comprises, after performing partial shrinkage of the phase change material, measuring the shape of the holding support surface or the surface of the object held and supported by the holding support using the measuring unit, and the second process is repeated until the difference between the target shape and the measured shape converges within an allowable range. Claim 8 A holding support device for supporting an object, wherein the holding support part has a plurality of protrusions that support the object, and each of the plurality of target protrusions constituting at least a portion of the plurality of protrusions has a first part and a second part, wherein the second part is positioned closer to the object supported by the holding support device than the first part, wherein the first part does not include a phase change material that undergoes a phase change between an amorphous phase and a crystalline phase and undergoes a volume change accompanying the phase change, and the second part includes the phase change material, and wherein each of the plurality of target protrusions is capable of changing its height by a volume change accompanying a change in the phase state of the phase change material included in the second part. Claim 9 A holding support device according to claim 8, characterized in that the height of each of the plurality of target protrusions can be individually changed by making the phase state of the phase change material included in the second part different from each other. Claim 10 A holding support device according to claim 8, characterized in that the height distribution of the plurality of target protrusions is set to correspond to the target shape of the object supported by the holding support. Claim 11 A retaining support device according to claim 8, characterized in that the second part is positioned on the upper surface side of the target projection. Claim 12 A retaining support device according to claim 8, wherein at least one of the plurality of target protrusions further has a third part, and the third part is positioned closer to the object than the second part. Claim 13 A retaining support device according to claim 12, characterized in that the third part is a protective layer installed on the upper surface of the second part. Claim 14 A retaining support device according to claim 8, characterized in that the phase change material comprises a chalcogenide-based phase change material. Claim 15 A retaining support device according to claim 14, characterized in that the phase change material comprises a Ge-Te-based material, a Ge-Sb-Te-based material, a Ge-In-Sb-Te-based material, or an Ag-In-Sb-Te-based material. Claim 16 A holding support device according to claim 8, further comprising a heating unit for heating the phase change material included in the second part, wherein the heating unit heats the phase change material by irradiating the phase change material with electromagnetic radiation from a position spaced apart from the holding support surface that supports the object in the holding support part. Claim 17 A holding support device according to claim 16, wherein the heating part comprises a galvanometer scanner that deflects the electron radiation generated from a radiation source so that the electron radiation is irradiated onto the phase change material included in the second part of a selected target protrusion among the plurality of target protrusions. Claim 18 A lithography device for forming a pattern on a substrate, characterized by having a holding support device described in any one of claims 1 to 17, which holds and supports the substrate, which is an object. Claim 19 A method for manufacturing an article, characterized by having a process of forming a pattern on a substrate using a lithography apparatus described in claim 18, a process of processing the substrate on which the pattern is formed in the process, and manufacturing an article from the processed substrate.

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